SOT-23 SuperSOT TM -8 SO-8 SOT-223. = 25 C unless otherwise noted. Symbol Parameter N-Channel P-Channel Units V DSS

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1 July 998 FS898A ual N & P-Channel Enhancement Mode Field Effect Transistor General escription Features These dual N- and P -Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, MOS technology. This very high density process is especially tailored to minimize on-state resistance and provide superior switching performance. These devices are particularly suited for low voltage applications such as notebook computer power management and other battery powered circuits where fast switching, low in-line power loss, and resistance to transients are needed. N-Channel. A, V, R S(ON) =. =. V R S(ON) =.8 =. V. P-Channel - A,- V, R S(ON) =. =-. V R S(ON) =.7 =-. V. High density cell design for extremely low R S(ON). High power and current handling capability in a widely used surface mount package. ual (N & P-Channel) MOSFET in surface mount package. SOT- SuperSOT TM -8 SO-8 SOT- SuperSOT TM -6 SOIC-6 SO-8 FS 898A pin S S G G Absolute Maximum Ratings T A = C unless otherwise noted Symbol Parameter N-Channel P-Channel Units S rain-source Voltage - V S Gate-Source Voltage 8-8 V I rain Current - Continuous (Note a). - A - Pulsed - P Power issipation for ual Operation W Power issipation for Single Operation (Note a).6 (Note b) (Note c).9 T J,T STG Operating and Storage Temperature Range - to C THERMAL CHARACTERISTICS R θja Thermal Resistance, Junction-to-Ambient (Note a) 78 C/W R θjc Thermal Resistance, Junction-to-Case (Note ) C/W 998 Fairchild Semiconductor Corporation FS898A Rev. B

2 Electrical Characteristics (T A = C unless otherwise noted) Symbol Parameter Conditions Type Min Typ Max Units OFF CHARACTERISTICS BS rain-source Breakdown Voltage = V, I = µa N-Ch V = V, I = - µa P-Ch - V BS / T J Breakdown Voltage Temp. Coefficient I = µa, Referenced to o C N-Ch mv/ o C I = - µa, Referenced to o C P-Ch - I SS Zero Gate Voltage rain Current = V, = V N-Ch µa = -6 V, = V P-Ch - µa I SF Gate - Body Leakage, Forward = 8 V, = V All na I SR Gate - Body Leakage, Reverse = -8 V, = V All - na ON CHARACTERISTICS (Note ) (th) Gate Threshold Voltage =, I = µa N-Ch..67 V =, I = - µa P-Ch V (th) / T J Gate Threshold Voltage Temp. Coefficient I = µa, Referenced to o C N-Ch - mv/ o C I = - µa, Referenced to o C P-Ch R S(ON) Static rain-source On-Resistance =. V, I =. A N-Ch.. Ω =. V, I =. A..8 = -. V, I = - A P-Ch.. = -. V, I = -. A.9.7 I (on) On-State rain Current =. V, = V N-Ch A = -. V, = - V P-Ch - g FS Forward Transconductance = V, I =. A N-Ch S YNAMIC CHARACTERISTICS C iss Input Capacitance = V, = V, f =. MHz = - V, I = - A P-Ch S N-Ch 9 pf P-Ch C oss Input Capacitance N-Ch pf = - V, = V, P-Ch 8 C rss Reverse Transfer Capacitance f =. MHz N-Ch pf P-Ch FS898A Rev. B

3 Electrical Characteristics (continued) SWITCHING CHARACTERISTICS (Note ) Symbol Parameter Conditions Type Min Typ Max Units t (on) Turn - On elay Time = 6 V, I = A N-Ch 6 ns =. V, R GEN = 6 Ω P-Ch 8 6 t r Turn - On Rise Time N-Ch 9 ns P-Ch 7 t (off) Turn - Off elay Time = - V, I = - A N-Ch 67 ns = -. V, R GEN = 6 Ω P-Ch 6 6 t f Turn - Off Fall Time N-Ch ns P-Ch 9 Q g Total Gate Charge = V, I =. A, N-Ch nc =. V P-Ch 8 Q gs Gate-Source Charge N-Ch nc = - V, I = - A, P-Ch.8 Q gd Gate-rain Charge = - V N-Ch 6. nc P-Ch. RAIN-SOURCE IOE CHARACTERISTICS AN MAXIMUM RATIN I S Maximum Continuous rain-source iode Forward Current N-Ch. A P-Ch -. A V S rain-source iode Forward Voltage = V, I S =. A (Note ) N-Ch.68. V = V, I S = -. A (Note ) P-Ch V Notes:. R θja is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. R θjc is guaranteed by design while R θca is determined by the user's board design. a. 78 O C/W on a. in pad of oz copper. b. O C/W on a. in pad of oz copper. c. O C/W on a. in pad of oz copper. Scale : on letter size paper. Pulse Test: Pulse Width < µs, uty Cycle <.%.. FS898A Rev. B

4 S Typical Electrical Characteristics: N-Channel I, RAIN-SOURCE CURRENT (A) 8 6 V =.V.V.V.V.V, RAIN-SOURCE VOLTAGE (V) R S(ON), NORMALIZE RAIN-SOURCE ON-RESISTANCE.6. V =.V. V.V. V I, RAIN CURRENT (A).V Figure. On-Region Characteristics. Figure. On-Resistance Variation with rain Current and Gate Voltage. R S(ON), NORMALIZE RAIN-SOURCE ON-RESISTANCE I =. A =. V T J, JUNCTION TEMPERATURE ( C) R S(ON), ON-RESISTANCE (OHM)..7.. T = C A C V, GATE TO SOURCE VOLTAGE (V) I = A Figure. On-Resistance Variation with Temperature. Figure. On-Resistance Variation with Gate-to-Source Voltage. I, RAIN CURRENT (A) 6 8 V = T = - C A C C I, REVERSE RAIN CURRENT (A) = V... T = C A C - C... V, GATE TO SOURCE VOLTAGE (V) V S, BOY IOE FORWAR VOLTAGE (V) Figure. Transfer Characteristics. Figure 6. Body iode Forward Voltage Variation with Source Current and Temperature. FS898A Rev. B

5 Typical Electrical Characteristics: N-Channel (continued), GATE-SOURCE VOLTAGE (V) I =.A = V V V Q g, GATE CHARGE (nc) CAPACITANCE (pf) 8 f = MHz = V.., RAIN TO SOURCE VOLTAGE (V) C iss C oss C rss Figure 7. Gate Charge Characteristics. Figure 8. Capacitance Characteristics. I, RAIN CURRENT (A). RS(ON) LIMIT ms s s C ms. =.V SINGLE PULSE. R θja= C/W T A= C.... V S, RAI N-SOURCE VOLTAGE (V) us ms POWER (W)... SINGLE PULSE TIME (SEC) SINGLE PULSE R θja = C/W T A = C Figure 9. Maximum Safe Operating Area. Figure. Single Pulse Maximum Power issipation. FS898A Rev. B

6 S Typical Electrical Characteristics: P-Channel -I, RAIN-SOURCE CURRENT (A) 8 6 = -.V -.V -.V -.V -.V -.V -, RAIN-SOURCE VOLTAGE (V) R S(ON), NORMALIZE RAIN-SOURCE ON-RESISTANCE.6. V = -.V -. V -. V -.V -.V I, RAIN CURRENT (A) Figure. On-Region Characteristics. Figure. On-Resistance Variation with rain Current and Gate Voltage. R S(ON), NORMALIZE RAIN-SOURCE ON-RESISTANCE I = -.A = -.V T, JUNCTION TEMPERATURE ( C) J R S(ON), ON-RESISTANCE (OHM).... T = C A C -V, GATE TO SOURCE VOLTAGE (V) I = -A Figure. On-Resistance Variation with Temperature. Figure. On-Resistance Variation with Gate-to-Source Voltage. - I, RAIN CURRENT (A) 8 6 V = - T = - C J C , GATE TO SOURCE VOLTAGE (V) C - I, REVERSE RAIN CURRENT (A).. = V T = C J C - C V S, BOY IOE FORWAR VOLTAGE (V) Figure. Transfer Characteristics. Figure 6. Body iode Forward Voltage Variation with Source Current and Temperature. FS898A Rev. B

7 Typical Electrical Characteristics: P-Channel (continued) -, GATE-SOURCE VOLTAGE (V) I =-.A 8 6 Q g, GATE CHARGE (nc) V = - -V -V CAPACITANCE (pf) C rss f = MHz = V... -, RAIN TO SOURCE VOLTAGE (V) C iss C oss Figure 7. Gate Charge Characteristics. Figure 8. Capacitance Characteristics. - I, RAIN CURRENT (A)... RS(ON) LIMIT = -.V SINGLE PULSE R θja = C/W T A = C s s.... C ms ms ms -, RAIN-SOURCE VOLTAGE (V) us POWER (W)... SINGLE PULSE TIME (SEC) SINGLE PULSE R θja = C/W T A = C Figure 9. Maximum Safe Operating Area. Figure. Single Pulse Maximum Power issipation. FS898A Rev. B

8 Typical Thermal Characteristics: N & P-Channel (continued) r(t), NORMALIZE EFFECTIVE TRANSIENT THERMAL RESISTANCE = Single Pulse..... t, TIME (sec) P(pk) R θja (t) = r(t) * R θja R = C/W θja t t T J - T = P * R (t) A θja uty Cycle, = t /t Figure. Transient Thermal Response Curve. Thermal characterization performed using the conditions described in note. Transient thermalresponse will change depending on the circuit board design. FS898A Rev. B

9 TRAEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ISCLAIMER ACEx CoolFET CROSSVOLT E CMOS TM FACT FACT Quiet Series FAST FASTr GTO HiSeC ISOPLANAR MICROWIRE POP PowerTrench QFET QS Quiet Series SuperSOT - SuperSOT -6 SuperSOT -8 TinyLogic UHC VCX FAIRCHIL SEMICONUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PROUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR ESIGN. FAIRCHIL OES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PROUCT OR CIRCUIT ESCRIBE HEREIN; NEITHER OES IT CONVEY ANY LICENSE UNER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. LIFE SUPPORT POLICY FAIRCHIL S PROUCTS ARE NOT AUTHORIZE FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT EVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHIL SEMICONUCTOR CORPORATION. As used herein:. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in significant injury to the user. PROUCT STATUS EFINITIONS efinition of Terms. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. atasheet Identification Product Status efinition Advance Information Preliminary No Identification Needed Formative or In esign First Production Full Production This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. Obsolete Not In Production This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only.