FDS9435A Single P-Channel Enhancement Mode Field Effect Transistor
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1 May 999 FS9435A Single P-Channel Enhancement Mode Field Effect Transistor Generalescription SO-8 P-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, MOS technology. This very high density process is especially tailored to minimize on-state resistance and provide superior switching performance. These devices are particularly suited for low voltage applications such as notebook computer power management and other battery powered circuits where fast switching, low in-line power loss, and resistance to transients are needed. Features -5.3 A, -3 V, R S(ON) =.45 V GS = - V, R S(ON) =.75 V GS = V. High density cell design for extremely low R S(ON). High power and current handling capability in a widely used surface mount package. SOT-23 SuperSOT TM -6 SuperSOT TM -8 SO-8 SOT-223 SOIC-6 FS 9435A SO-8 pin S S S G Absolute Maximum Ratings T A = 25 o C unless otherwise noted Symbol Parameter FS9435A Units V SS rain-source Voltage -3 V V GSS Gate-Source Voltage -2 V I rain Current - Continuous (Note a) A - Pulsed -5 P Maximum Power issipation (Note a) 2.5 W (Note b).2 (Note c) T J,T STG Operating and Storage Temperature Range -55 to 5 C THERMAL CHARACTERISTICS R θja Thermal Resistance, Junction-to-Ambient (Note a) 5 C/W R θjc Thermal Resistance, Junction-to-Case (Note ) 25 C/W 999 Fairchild Semiconductor Corporation FS9435A Rev.C
2 Electrical Characteristics (T A = 25 O C unless otherwise noted ) Symbol Parameter Conditions Min Typ Max Units OFF CHARACTERISTICS BV SS rain-source Breakdown Voltage V GS = V, I = -25 µa -3 V BV SS / T J Breakdown Voltage Temp. Coefficient I = -25 µa, Referenced to 25 o C -25 mv/ o C I SS Zero Gate Voltage rain Current V S = -24 V, V GS = V - µa I GSSF Gate - Body Leakage, Forward V GS = 2 V, V S = V - na I GSSR Gate - Body Leakage, Reverse V GS = -2 V, V S = V - na ON CHARACTERISTICS (Note 2) V GS(th) Gate Threshold Voltage V S = V GS, I = -25 µa V V GS(th) / T J Gate Threshold Voltage Temp. Coefficient I = -25 µa, Referenced to 25 o C -3.2 mv/ o C R S(ON) Static rain-source On-Resistance V GS = - V, I = -5.3 A Ω T J =25 C V GS = -4.5 V, I = -4. A I (ON) On-State rain Current V GS = - V, V S = -5 V -25 A g FS Forward Transconductance V S = - V, I = -4 A 9.5 S YNAMIC CHARACTERISTICS C iss Input Capacitance V S = -5 V, V GS = V, 73 pf C oss Output Capacitance f =. MHz 4 pf C rss Reverse Transfer Capacitance 9 pf SWITCHING CHARACTERISTICS (Note 2) t (on) Turn - On elay Time V S = - V, I = - A 2 ns t r Turn - On Rise Time V GS = - V, R GEN = 6 Ω 8 t (off) Turn - Off elay Time 9 25 t f Turn - Off Fall Time 55 8 Q g Total Gate Charge V S = - V, I = -4 A, 9 27 nc Q gs Gate-Source Charge V GS = - V 3.5 Q gd Gate-rain Charge 3.6 RAIN-SOURCE IOE CHARACTERISTICS AN MAXIMUM RATINGS I S Maximum Continuous rain-source iode Forward Current -2. A V S rain-source iode Forward Voltage V GS = V, I S = -2. A (Note 2) V Notes:. R θja is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. R θjc is guaranteed by design while R θca is determined by the user's board design. a. 5 O C/W on a in 2 pad of 2oz copper. b. 5 O C/W on a.4 in 2 pad of 2oz copper. c. 25 O C/W on a.6 in 2 pad of 2oz copper. Scale : on letter size paper 2. Pulse Test: Pulse Width < 3µs, uty Cycle < 2.%. FS9435A Rev.C
3 S Typical Electrical Characteristics - I, RAIN-SOURCE CURRENT (A) V GS= -V -7.V -6.V -5.V -4.5V -4.V -3.5V R S(on), NORMALIZE RAIN-SOURCE ON-RESISTANCE V GS = -3.5 V -4.V -4.5V -5.V -6.V -8.V -V V S, RAIN-SOURCE VOLTAGE (V) I, RAIN CURRENT (A) Figure. On-Region Characteristics. Figure 2. On-Resistance Variation with rain Current and Gate Voltage. R S(ON), NORMALIZE RAIN-SOURCE ON-RESISTANCE I = -5.3A V GS = -V R S(ON), ON-RESISTANCE (OHM) T = 25 C J T = 25 C J I = -2.7A T J, JUNCTION TEMPERATURE ( C) V, GATE TO SOURCE VOLTAGE (V) GS Figure 3. On-Resistance Variation with Temperature. Figure 4. On-Resistance Variation with Gate-to-Source Voltage. - I, RAIN CURRENT (A) V = -5V S T = -55 C J 25 C 25 C V, GATE TO SOURCE VOLTAGE (V) GS -I, REVERSE RAIN CURRENT (A) 6... V GS= V T = 25 C J 25 C -55 C V S, BOY IOE FORWAR VOLTAGE (V) Figure 5. Transfer Characteristics. Figure 6. Body iode Forward Voltage Variation with Source Current and Temperature. FS9435A Rev.C
4 Typical Electrical Characteristics (continued) -V GS, GATE-SOURCE VOLTAGE (V) I = -5.3A Q g, GATE CHARGE (nc) V = -5V S -V -5V CAPACITANCE (pf) f = MHz V GS = V V S, RAIN TO SOURCE VOLTAGE (V) C iss C oss C rss Figure 7. Gate Charge Characteristics. Figure 8. Capacitance Characteristics. -I, RAIN CURRENT (A) RS(ON) LIMIT s s V GS = -V. SINGLE PULSE R θja = 25 C/W T AA= 25 C C ms ms ms -V S, RAIN-SOURCE VOLTAGE (V) us POWER (W) SINGLE PULSE TIME (SEC) SINGLE PULSE R θja= 25 C/W T A = 25 C Figure 9. Maximum Safe Operating Area. Figure. Single Pulse Maximum Power issipation. r(t), NORMALIZE EFFECTIVE TRANSIENT THERMAL RESISTANCE = Single Pulse t, TIME (sec) P(pk) R θja (t) = r(t) * R θja R θja = 25 C/W t t 2 T J - T A = P * R θja (t) uty Cycle, = t / t 2 Figure. Transient Thermal Response Curve. Thermal characterization performed using the conditions described in Note c. Transient thermal response will change depending on the circuit board design. FS9435A Rev.C
5 ELECTRO MAGN ETI C, MAG NETIC O R R AIO ACTIVE FI EL S TNR ATE PT NUMBER PEEL STRENGTH MIN gms MAX gms SO-8 Tape and Reel ata and Package imensions SOIC(8lds) Packaging Configuration: Figure. ELECTROSTATIC SENSITIVE EVICES O NO T SHI P OR STO RE N EAR STRO NG ELECTROSTATIC ES Label Antistatic Cover Tape Static issipative Embossed Carrier Tape Packaging escription: SOIC-8 parts are shipped in tape. The carrier tape is made from a dissipative (carbon filled) polycarbonate resin. The cover tape is a multilayer film (Heat Activated Adhesive in nature) primarily composed of polyester film, adhesive layer, sealant, and anti-static sprayed agent. These reeled parts in standard option are shipped with 2,5 units per 3" or 33cm diameter reel. The reels are dark blue in color and is made of polystyrene plastic (antistatic coated). Other option comes in 5 units per 7" or 77cm diameter reel. This and some other options are further described in the Packaging Information table. These full reels are individually barcode labeled and placed inside a standard intermediate box (illustrated in figure.) made of recyclable corrugated brown paper. One box contains two reels maximum. And these boxes are placed inside a barcode labeled shipping box which comes in different sizes depending on the number of parts shipped. F63TNR Label Customized Label Note/Comments SOIC (8lds) Packaging Information Packaging Option Standard (no flow code) L86Z F 84Z Packaging type TNR Rail/Tube TNR TNR Qty per Reel/Tube/Bag 2,5 95 4, 5 Reel Size 3" ia - 3" ia 7" ia Box imension (mm) 343x64x343 53x3x83 343x64x343 84x87x47 Max qty per Box 5, 3, 8,, Weight per unit (gm) Weight per Reel (kg) NS NS NS SOIC-8 Unit Orientation NS NS Pin 343mm x 342mm x 64mm Standard Intermediate box F63TNR Label sample LOT: CBVK74B9 QTY: 25 F63TNLabel ES Label F63TN Label FSI: FS9953A SPEC: ES Label /C: 9842 QTY: SPEC REV: /C2: QTY2: CPN: N/F: F (F63TNR)3 SOIC(8lds) Tape Leader and Trailer Configuration: Figure 2. Carrier Tape Cover Tape Trailer Tape 64mm minimum or 8 empty pockets Components Leader Tape 68mm minimum or 2 empty pockets July 999, Rev. B
6 SO-8 Tape and Reel ata and Package imensions, continued SOIC(8lds) Embossed Carrier Tape Configuration: Figure 3. T P E F K Wc B E2 W Tc A P User irection of Feed imensions are in millimeter Pkg type A B W E E2 F P P K T Wc Tc SOIC(8lds) (2mm) 6.5 +/ / / / / /-..25 min 5.5 +/ / / / / / /-.2 Notes: A, B, and K dimensions are determined with respect to the EIA/Jedec RS-48 rotational and lateral movement requirements (see sketches A, B, and C). 2 deg maximum.5mm maximum B Typical component cavity center line.5mm maximum 2 deg maximum component rotation Sketch A (Side or Front Sectional View) Component Rotation SOIC(8lds) Reel Configuration: Figure 4. A Sketch B (Top View) Component Rotation Typical component center line Sketch C (Top View) Component lateral movement W Measured at Hub im A Max im A max im N 7" iameter Option See detail AA B Min im C See detail AA W3 im min 3" iameter Option W2 max Measured at Hub ETAIL AA Tape Size Reel Option imensions are in inches and millimeters im A im B im C im im N im W im W2 im W3 (LSL-USL) 2mm 7" ia / / / / mm 3" ia / / / / Fairchild Semiconductor Corporation July 999, Rev. B
7 SO-8 Tape and Reel ata and Package imensions, continued SOIC-8 (FS PKG Code S) : Scale : on letter size paper imensions shown below are in: inches [millimeters] Part Weight per unit (gram): September 998, Rev. A
8 TRAEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ISCLAIMER ACEx CoolFET CROSSVOLT E 2 CMOS TM FACT FACT Quiet Series FAST FASTr GTO HiSeC ISOPLANAR MICROWIRE POP PowerTrench QFET QS Quiet Series SuperSOT -3 SuperSOT -6 SuperSOT -8 TinyLogic UHC VCX FAIRCHIL SEMICONUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PROUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR ESIGN. FAIRCHIL OES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PROUCT OR CIRCUIT ESCRIBE HEREIN; NEITHER OES IT CONVEY ANY LICENSE UNER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. LIFE SUPPORT POLICY FAIRCHIL S PROUCTS ARE NOT AUTHORIZE FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT EVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHIL SEMICONUCTOR CORPORATION. As used herein:. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in significant injury to the user. PROUCT STATUS EFINITIONS efinition of Terms 2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. atasheet Identification Product Status efinition Advance Information Preliminary No Identification Needed Formative or In esign First Production Full Production This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. Obsolete Not In Production This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only.
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BV26 BV26 E SOT-23 Mark: FD B PNP Darlington Transistor This device is designed for applications requiring extremely high current gain at currents to 8 ma. Sourced from Process 61. Absolute Maximum Ratings*
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More informationSOT-23 Mark: 6U / 6T. TA = 25 C unless otherwise noted. Symbol Parameter Value Units
G S D J309 J310 TO-92 N-Channel RF Amplifier MMBFJ309 MMBFJ310 G SOT-23 Mark: 6U / 6T D S NOTE: Source & Drain are interchangeable J309 / J310 / MMBFJ309 / MMBFJ310 This device is designed for VHF/UHF
More informationFeatures G D. TO-220 FQP Series
FQP34N20L FQP34N20L 200V LOGIC N-Channel MOSFET June 2000 QFET TM General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild s proprietary, planar
More informationTA = 25 C unless otherwise noted. Symbol Parameter Value Units
BP52 BP52 SOT-223 B E PNP General Purpose Amplifier This device is designed for general purpose medium power amplifiers and switching circuits requiring collector currents to 1. A. Sourced from Process
More informationSuperSOT-3 Mark: 3SS. TA = 25 C unless otherwise noted. Symbol Parameter Value Units
C B E MPSA28 TO-92 MMBTA28 C SuperSOT-3 Mark: 3SS B E PZTA28 C C B SOT-223 E MPSA28 / MMBTA28 / PZTA28 NPN Darlington Transistor This device is designed for applications requiring extremely high current
More informationQFET TM FQP13N06. Features G D. TO-220 FQP Series
60V N-Channel MOSFET May 2001 QFET TM General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild s proprietary, planar stripe, DMOS technology. This
More informationQFET TM FQT4N20L. Features. SOT-223 FQT Series
200V LOGIC N-Channel MOSFET May 2001 QFET TM General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild s proprietary, planar stripe, DMOS technology.
More informationQFET TM FQL40N50. Features. TO-264 FQL Series
500V N-Channel MOSFET May 2001 QFET TM General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild s proprietary, planar stripe, DMOS technology. This
More informationQFET TM FQP20N06. Features G D. TO-220 FQP Series
60V N-Channel MOSFET May 2001 QFET TM General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild s proprietary, planar stripe, DMOS technology. This
More informationFeatures. TO-220F SSS Series
600V N-Channel MOSFET General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild s proprietary, planar, DMOS technology. This advanced technology has
More informationFeatures. TO-3P IRFP Series
500V N-Channel MOSFET November 2001 General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild s proprietary, planar, DMOS technology. This advanced
More informationFDB8447L 40V N-Channel PowerTrench MOSFET 40V, 50A, 8.5mΩ Features
FDB8447L V N-Channel PowerTrench MOSFET V, 5A, 8.5mΩ Features Max r DS(on) = 8.5mΩ at, I D = 4A Max r DS(on) = mω at V GS = 4.5V, I D = A Fast Switching RoHS Compliant D General Description February 7
More informationFeatures D D. I-PAK FQU Series
1000V N-Channel MOSFET General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild s proprietary, planar stripe, DMOS technology. This advanced technology
More informationFeatures. TO-3PN IRFP Series
500V N-Channel MOSFET General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild s proprietary, planar stripe, DMOS technology. This advanced technology
More informationFeatures. TO-220F IRFS Series
400V N-Channel MOSFET General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild s proprietary, planar, DMOS technology. This advanced technology has
More informationFDC655BN Single N-Channel, Logic Level, PowerTrench MOSFET
FC655BN Single N-Channel, Logic Level, PowerTrench MOSFET 3 V, 6.3 A, 5 mω Features Max r S(on) = 5 mω at V GS = V, I = 6.3 A Max r S(on) = 33 mω at V GS =.5 V, I = 5.5 A Fast switching Low gate charge
More informationFDS6679AZ P-Channel PowerTrench MOSFET -30V, -13A, 9mΩ General Description
FS6679AZ P-Channel PowerTrench MOSFET -3V, -3A, 9mΩ General escription This P-Channel MOSFET is producted using Fairchild Semiconductor s advanced PowerTrench process that has been especially tailored
More informationFeatures S 1. TA=25 o C unless otherwise noted
FC5P V P-Channel Logic Level PowerTrench MOSFET FC5P General escription This V P-Channel MOSFET uses ON Semiconductor s high voltage PowerTrench process. It has been optimized for power management applications.
More informationQFET TM FQA65N20. Features. TO-3P FQA Series
200V N-Channel MOSFET August 2001 QFET TM General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild s proprietary, planar stripe, DMOS technology.
More informationTA = 25 C unless otherwise noted. Symbol Parameter Value Units
PN5432 PN PN PN5432 / PN / PN G S D TO-92 N-Channel Switch This device is designed for analog or digital switching applications where very low On Resistance is mandatory. Sourced from Process 58. See J108
More informationFDD8447L 40V N-Channel PowerTrench MOSFET 40V, 50A, 8.5mΩ Features
FDD8447L 4V N-Channel PowerTrench MOSFET 4V, 5A, 8.5mΩ Features Max r DS(on) = 8.5mΩ at V GS = V, I D = 4A Max r DS(on) =.mω at V GS = 4.5V, I D = A Fast Switching RoHS Compliant G S D-PAK TO-252 (TO-252)
More informationQFET TM FQP85N06. Features G D. TO-220 FQP Series
60V N-Channel MOSFET May 2001 QFET TM General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild s proprietary, planar stripe, DMOS technology. This
More informationSB320 - SB3100 T A. = 25 C unless otherwise noted. Symbol Parameter Value Units
SB3 - SB30 SB3-SB30 Features 3.0 ampere operation at T A = 75 C with no thermal runaway. For use in low voltage, high frequency inverters free wheeling, and polarity protection applications. DO-AD COLOR
More informationDescription. TO-220 FCP Series. Symbol Parameter FDP61N20 Unit. Maximum Lead Temperature for Soldering Purpose, 300 C 1/8 from Case for 5 Seconds
FDP61N20 200V N-Channel MOSFET Features 61A, 200V, R DS(on) = 0.041Ω @ = 10 V Low gate charge ( typical 58 nc) Low C rss ( typical 80 pf) Fast switching 100% avalanche tested Improved dv/dt capability
More informationQFET TM FQP13N06L. Features G D. TO-220 FQP Series
60V LOGIC N-Channel MOSFET May 2001 QFET TM General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild s proprietary, planar stripe, DMOS technology.
More informationFQA11N90C FQA11N90C. 900V N-Channel MOSFET. Absolute Maximum Ratings T C = 25 C unless otherwise noted. Thermal Characteristics.
900V N-Channel MOSFET General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild s proprietary, planar stripe, DMOS technology. This advanced technology
More informationTA = 25 C unless otherwise noted. Symbol Parameter Value Units
C B E PN2 PN2A TO-92 PNP General Purpose Amplifier This device is designed for general purpose amplifier applications at collector currents to 3 ma. Sourced from Process 68. MMBT2 MMBT2A C SOT-23 Mark:
More informationFDMJ1032C. Dual N & P-Channel PowerTrench MOSFET N-Channel: 20V, 3.2A, 90mΩ P-Channel: -20V, -2.5A, 160mΩ
FDMJC Dual N & P-Channel PowerTrench MOSFET N-Channel: V,.A, 9mΩ P-Channel: -V, -.5A, mω Features : N-Channel Max r DS(on) = 9mΩ at V GS =.5V, I D =.A Max r DS(on) = mω at V GS =.5V, I D =.5A : P-Channel
More informationE C B E. TO-92 SOT-23 Mark: 2T. TA = 25 C unless otherwise noted. Symbol Parameter Value Units
2N443 MMBT443 C 2N443 / MMBT443 E C B E TO-92 SOT-23 Mark: 2T B PNP General Purpose Amplifier This device is designed for use as a general purpose amplifier and switch requiring collector currents to 5
More informationFDD V P-Channel PowerTrench MOSFET 40V, 32A, 27mΩ Features
FDD4685 V P-Channel PowerTrench MOSFET V, 3A, 7mΩ Features Max r DS(on) = 7mΩ at V GS = V, I D = 8.4A Max r DS(on) = 35mΩ at V GS = 4.5V, I D = 7A High performance trench technology for extremely low r
More informationNDS351N N-Channel Logic Level Enhancement Mode Field Effect Transistor
NS3N N-Channel Logic Level Enhancement Mode Field Effect Transistor General escription These N-Channel logic level enhancement mode power field effect transistors are produced using ON Semiconductor's
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More informationDescription. TO-3P FDA Series. Symbol Parameter FDA70N20 Unit. Maximum Lead Temperature for Soldering Purpose, 300 C 1/8 from Case for 5 Seconds
FDA70N20 200V N-Channel MOSFET Features 70A, 200V, R DS(on) = 0.035Ω @ = 10 V Low gate charge ( typical 66 nc) Low C rss ( typical 89 pf) Fast switching 100% avalanche tested Improved dv/dt capability
More informationQFET TM FQD18N20V2 / FQU18N20V2
200V N-Channel MOSFET General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild s proprietary, planar stripe, DMOS technology. This advanced technology
More informationFDZ V N-Channel PowerTrench BGA MOSFET
FDZ7296 3V N-Channel PowerTrench BGA MOSFET General Description Combining Fairchild s advanced PowerTrench process with state-of-the-art BGA packaging, the FDZ7296 minimizes both PCB space and R DS(ON).
More informationIs Now Part of To learn more about ON Semiconductor, please visit our website at
Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com ON Semiconductor and the ON Semiconductor logo are trademarks of Semiconductor Components Industries, LLC
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