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1 Is Now Part of To learn more about ON Semiconductor, please visit our website at ON Semiconductor and the ON Semiconductor logo are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor s product/patent coverage may be accessed at ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by ON Semiconductor. Typical parameters which may be provided in ON Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including Typicals must be validated for each customer application by customer s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FA Class medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.

2 February 996 NS99A ual N & P-Channel Enhancement Mode Field Effect Transistor General escription Features These dual N- and P-channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, MOS technology. This very high density process is especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulses in the avalanche and commutation modes. These devices are particularly suited for low voltage applications such as notebook computer power management and other battery powered circuits where fast switching, low in-line power loss, and resistance to transients are needed. N-Channel.7A, V, R S(ON) =V. P-Channel -.9A, -V, R S(ON) =-V. High density cell design or extremely low R S(ON). High power and current handling capability in a widely used surface mount package. ual (N & P-Channel) MOSFET in surface mount package Absolute Maximum Ratings T A = C unless otherwise noted Symbol Parameter N-Channel P-Channel Units V SS rain-source Voltage - V S Gate-Source Voltage ± ± V I rain Current - Continuous (Note a) ±.7 ±.9 A - Pulsed ± ± P Power issipation for ual Operation W Power issipation for Single Operation (Note a).6 (Note b) (Note c).9,t STG Operating and Storage Temperature Range - to C THERMAL CHARACTERISTICS R Thermal Resistance, Junction-to-Ambient (Note a) 78 C/W θja R Thermal Resistance, Junction-to-Case (Note ) C/W θjc 997 Fairchild Semiconductor Corporation NS99A.SAM

3 Electrical Characteristics (T A = C unless otherwise noted) Symbol Parameter Conditions Type Min Typ Max Units OFF CHARACTERISTICS BV SS rain-source Breakdown Voltage = V, I = µa N-Ch V = V, I = - µa P-Ch - V I SS Zero Gate Voltage rain Current V S = V, = V N-Ch µa = C µa V S = - V, = V P-Ch - µa = C - µa I SF Gate - Body Leakage, Forward = V, V S = V All na I SR Gate - Body Leakage, Reverse = - V, V S = V All - na ON CHARACTERISTICS (Note ) (th) Gate Threshold Voltage V S =, I = µa N-Ch.7.8 V = C.7.. V S =, I = - µa P-Ch = C R S(ON) Static rain-source On-Resistance = V, I =. A N-Ch.6.8 Ω = C.8. =. V, I =. A.8. = C..8 = - V, I = -. A P-Ch.. = C.. = -. V, I = -. A.7. = C.. I (on) On-State rain Current = V, V S = V N-Ch A = - V, V S = - V P-Ch - g FS Forward Transconductance V S = V, I =.7 A N-Ch 6 S YNAMIC CHARACTERISTICS V S = - V, I = -.9 A P-Ch C iss Input Capacitance N-Channel N-Ch pf V S = V, = V, f =. MHz P-Ch C oss Output Capacitance N-Ch pf P-Channel P-Ch 6 V S = - V, = V, C rss Reverse Transfer Capacitance f =. MHz N-Ch 8 pf P-Ch NS99A.SAM

4 Electrical Characteristics (T A = C unless otherwise noted) Symbol Parameter Conditions Type Min Typ Max Units SWITCHING CHARACTERISTICS (Note ) t (on) Turn - On elay Time N-Channel N-Ch ns V = V, I = A, P-Ch 9 V GEN = V, R GEN = 6 Ω t r Turn - On Rise Time N-Ch ns P-Channel P-Ch t (off) Turn - Off elay Time V = - V, I = - A, V GEN = - V, R GEN = 6 Ω N-Ch ns P-Ch 9 t f Turn - Off Fall Time N-Ch ns P-Ch 8 Q g Total Gate Charge N-Channel N-Ch 9. 7 nc V S = V, I =.7 A, = V P-Ch Q gs Gate-Source Charge N-Ch. nc P-Channel P-Ch.6 V S = - V, Q gd Gate-rain Charge I = -.9 A, = - V N-Ch. nc P-Ch. RAIN-SOURCE IOE CHARACTERISTICS AN MAXIMUM RATIN I S Maximum Continuous rain-source iode Forward Current N-Ch. A V S rain-source iode Forward Voltage P-Ch -. = V, I S =. A (Note ) N-Ch.8. V = V, I S = -. A (Note ) P-Ch t rr Reverse Recovery Time = V, I F =. A, di F /dt = A/µs N-Ch 7 ns Notes: = V, I F = -. A, di F /dt = A/µs P-Ch. R θja is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. R θjc is guaranteed by design while R θca is determined by the user's board design. P (t) = T A = T A = RθJ A(t) I R θj C +R (t) R S(ON ) TJ θca(t) Typical R θja for single device operation using the board layouts shown below on."x" FR- PCB in a still air environment: a. 78 o C/W when mounted on a. in pad of oz cpper. b. o C/W when mounted on a. in pad of oz cpper. c. o C/W when mounted on a. in pad of oz cpper. a b c Scale : on letter size paper. Pulse Test: Pulse Width < µs, uty Cycle <.%. NS99A.SAM

5 Typical Electrical Characteristics: N-Channel I, RAIN-SOURCE CURRENT (A) V =V R S(on), NORMALIZE RAIN-SOURCE ON-RESISTANCE.. V =.V V S, RAIN-SOURCE VOLTAGE (V) Figure. N-Channel On-Region Characteristics I, RAIN CURRENT (A) Figure. N-Channel On-Resistance Variation with Gate Voltage and rain Current..6 R S(ON), NORMALIZE RAIN-SOURCE ON-RESISTANCE...8 I =.7A = V R S(on), NORMALIZE RAIN-SOURCE ON-RESISTANCE. = V T = C J C - C , JUNCTION TEMPERATURE ( C). 6 9 I, RAIN CURRENT (A) Figure. N-Channel On-Resistance Variation with Temperature. Figure. N-Channel On-Resistance Variation with rain Current and Temperature. I, RAIN CURRENT (A) 8 6 V S = V T = - C J C C V th, NORMALIZE GATE-SOURCE THRESHOL VOLTAGE V S= I = µa, GATE TO SOURCE VOLTAGE (V) Figure. N-Channel Transfer Characteristics , JUNCTION TEMPERATURE ( C) Figure 6. N-Channel Gate Threshold Variation with Temperature. NS99A.SAM

6 S SS Typical Electrical Characteristics: N-Channel (continued) BV, NORMALIZE RAIN-SOURCE BREAKOWN VOLTAGE I = µa I, REVERSE RAIN CURRENT (A)... = V T = C J C - C , JUNCTION TEMPERATURE ( C) Figure 7. N-Channel Breakdown Voltage Variation with Temperature V S, BOY IOE FORWAR VOLTAGE (V) Figure 8. N-Channel Body iode Forward Voltage Variation with Current and Temperature. CAPACITANCE (pf) 8 f = MHz = V C iss C oss C rss, GATE-SOURCE VOLTAGE (V) 8 6 I =.7A V S = V V V... V S, RAIN TO SOURCE VOLTAGE (V) Figure 9. N-Channel Capacitance Characteristics. 6 8 Q g, GATE CHARGE (nc) Figure. N-Channel Gate Charge Characteristics. g, TRANSCONUCTANCE (SIEMENS) FS 8 6 V =V S T = - C J C C 6 8 I, RAIN CURRENT (A) Figure. N-Channel Transconductance Variation with rain Current and Temperature. NS99A.SAM

7 Typical Electrical Characteristics: P-Channel (continued) I, RAIN-SOURCE CURRENT (A) V = -V R S(on), NORMALIZE RAIN-SOURCE ON-RESISTANCE.. V = -.V V, RAIN-SOURCE VOLTAGE (V) S I, RAIN CURRENT (A) - - Figure. P-Channel On-Region Characteristics. Figure. P-Channel On-Resistance Variation with Gate Voltage and rain Current..6 R S(ON), NORMALIZE RAIN-SOURCE ON-RESISTANCE...8 I = -.9A = -V R S(on), NORMALIZE RAIN-SOURCE ON-RESISTANCE. V = -V T = C J C - C , JUNCTION TEMPERATURE ( C) I, RAIN CURRENT (A) - - Figure. P-Channel On-Resistance Variation with Temperature. Figure. P-Channel On-Resistance Variation with rain Current and Temperature. -. I, RAIN CURRENT (A) V = -V S T = - C J C C V th, NORMALIZE GATE-SOURCE THRESHOL VOLTAGE..9.8 V = V S I = -µa V, GATE TO SOURCE VOLTAGE (V) T, JUNCTION TEMPERATURE ( C) J Figure 6. P-Channel Transfer Characteristics. Figure 7. P-Channel Gate Threshold Variation with Temperature. NS99A.SAM

8 FS S SS Typical Electrical Characteristics: P-Channel (continued) BV, NORMALIZE RAIN-SOURCE BREAKOWN VOLTAGE I = -µa T J, JUNCTION TEMPERATURE ( C) Figure 8. P-Channel Breakdown Voltage Variation with Temperature. -I, REVERSE RAIN CURRENT (A)... = V T = C J C - C V S, BOY IOE FORWAR VOLTAGE (V) Figure 9. P-Channel Body iode Forward Voltage Variation with Current and Temperature. CAPACITANCE (pf) 8 f = MHz = V C iss C oss C rss -, GATE-SOURCE VOLTAGE (V) 8 6 I = -.9A V = -V S -V -V... -V S, RAIN TO SOURCE VOLTAGE (V) Figure. P-Channel Capacitance Characteristics. 6 8 Q g, GATE CHARGE (nc) Figure. P-Channel Gate Charge Characteristics. g, TRANSCONUCTANCE (SIEMENS) 6 V = -V S - I T = - C J C - -6, RAIN CURRENT (A) C Figure. P-Channel Transconductance Variation with rain Current and Temperature NS99A.SAM

9 Typical Thermal Characteristics: N & P-Channel. STEAY-STATE POWER ISSIPATION (W). b c Total Power for ual Operation a Power for Single Operation."x" FR- Board o T A = C Still Air oz COPPER MOUNTING PA AREA (in ) I, STEAY-STATE RAIN CURRENT (A) a b c."x" FR- Board o T A = C Still Air = V..... oz COPPER MOUNTING PA AREA (in ) Figure. SO-8 ual Package Maximum Steady-State Power issipation versus Copper Mounting Pad Area. Figure. N-Ch Maximum Steady- State rain Current versus Copper Mounting Pad Area. I, STEAY-STATE RAIN CURRENT (A) c b."x" FR- Board o T A = C Still Air = -V..... oz COPPER MOUNTING PA AREA (in ) Figure. P-Ch Maximum Steady- State rain Current versus Copper Mounting Pad Area. a I, RAIN CURRENT (A)... RS(ON) LIMIT V = V SINGLE PULSE R = See Note c θja T = C A s s C.... V S, RAIN-SOURCE VOLTAGE (V) ms ms us ms Figure 6. N-Channel Maximum Safe Operating Area. -I, RAIN CURRENT (A)... RS(ON) LIMIT V = -V SINGLE PULSE R = See Note c θja T = C A s C ms V S, RAIN-SOURCE VOLTAGE (V) s ms ms us Figure 7. P-Channel Maximum Safe Operating Area. NS99A.SAM

10 Typical Thermal Characteristics: N & P-Channel. =. r(t), NORMALIZE EFFECTIVE TRANSIENT THERMAL RESISTANCE Single Pulse..... t, TIME (sec) P(pk) R (t) = r(t) * R θja θja R = See Note c θja t t T J - T = P * R (t) A θja uty Cycle, = t / t Figure 8. Transient Thermal Response Curve. Note: Thermal characterization performed using the conditions described in note c. Transient thermal response will change depending on the circuit board design. V IN V R L t d(on) t on t r 9% t d(off) t off 9% t f OUT V OUT % R GEN G UT V % 9% S V IN % % % PULSE WITH Figure 9. N or P-Channel Switching Test Circuit. Figure. N or P-Channel Switching Waveforms. NS99A.SAM

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