Is Now Part of To learn more about ON Semiconductor, please visit our website at

Transcription

1 Is Now Part of To learn more about ON Semiconductor, please visit our website at ON Semiconductor and the ON Semiconductor logo are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor s product/patent coverage may be accessed at ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by ON Semiconductor. Typical parameters which may be provided in ON Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including Typicals must be validated for each customer application by customer s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.

2 60V N-Channel MOSFET QFET TM General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for low voltage applications such as automotive, DC/ DC converters, and high efficiency switching for power management in portable and battery operated products. Features 50A, 60V, R DS(on) = = 10 V Low gate charge ( typical 31 nc) Low Crss ( typical 65 pf) Fast switching 100% avalanche tested Improved dv/dt capability 175 C maximum junction temperature rating D! G D S TO-220 FQP Series G "! " "! "! S Absolute Maximum Ratings T C = 25 C unless otherwise noted Symbol Parameter Units S Drain-Source Voltage 60 V I D Drain Current - Continuous (T C = 25 C) 50 A - Continuous (T C = 100 C) 35.4 A I DM Drain Current - Pulsed (Note 1) 200 A S Gate-Source Voltage ± 25 V E AS Single Pulsed Avalanche Energy (Note 2) 490 mj I AR Avalanche Current (Note 1) 50 A E AR Repetitive Avalanche Energy (Note 1) 12 mj dv/dt Peak Diode Recovery dv/dt (Note 3) 7.0 V/ns P D Power Dissipation (T C = 25 C) 120 W - Derate above 25 C 0.8 W/ C T J, T STG Operating and Storage Temperature Range -55 to +175 C T L Maximum lead temperature for soldering purposes, 1/8" from case for 5 seconds 300 C Thermal Characteristics Symbol Parameter Typ Max Units R θjc Thermal Resistance, Junction-to-Case C/W R θcs Thermal Resistance, Case-to-Sink C/W R θja Thermal Resistance, Junction-to-Ambient C/W 2003 Fairchild Semiconductor Corporation Rev. A2, March 2003

3 Electrical Characteristics T C = 25 C unless otherwise noted Symbol Parameter Test Conditions Min Typ Max Units Off Characteristics BS Drain-Source Breakdown Voltage = 0 V, I D = 250 µa V BS Breakdown Voltage Temperature / T J Coefficient I D = 250 µa, Referenced to 25 C V/ C I DSS = 60 V, = 0 V µa Zero Gate Voltage Drain Current = 48 V, T C = 150 C µa I GSSF Gate-Body Leakage Current, Forward = 25 V, = 0 V na I GSSR Gate-Body Leakage Current, Reverse = -25 V, = 0 V na On Characteristics (th) Gate Threshold Voltage =, I D = 250 µa V R DS(on) Static Drain-Source V On-Resistance GS = 10 V, I D = 25 A Ω g FS Forward Transconductance = 25 V, I D = 25 A (Note 4) S Dynamic Characteristics C iss Input Capacitance = 25 V, = 0 V, pf C oss Output Capacitance f = 1.0 MHz pf C rss Reverse Transfer Capacitance pf Switching Characteristics t d(on) Turn-On Delay Time ns V DD = 30 V, I D = 25 A, t r Turn-On Rise Time R G = 25 Ω ns t d(off) Turn-Off Delay Time ns t f Turn-Off Fall Time (Note 4, 5) ns Q g Total Gate Charge = 48 V, I D = 50 A, nc Q gs Gate-Source Charge = 10 V nc Q gd Gate-Drain Charge (Note 4, 5) nc Drain-Source Diode Characteristics and Maximum Ratings I S Maximum Continuous Drain-Source Diode Forward Current A I SM Maximum Pulsed Drain-Source Diode Forward Current A V SD Drain-Source Diode Forward Voltage = 0 V, I S = 50 A V t rr Reverse Recovery Time = 0 V, I S = 50 A, ns Q rr Reverse Recovery Charge di F / dt = 100 A/µs (Note 4) nc Notes: 1. Repetitive Rating : Pulse width limited by maximum junction temperature 2. L = 230µH, I AS = 50A, V DD = 25V, R G = 25 Ω, Starting T J = 25 C 3. I SD 50A, di/dt 300A/µs, V DD BS, Starting T J = 25 C 4. Pulse Test : Pulse width 300µs, Duty cycle 2% 5. Essentially independent of operating temperature 2003 Fairchild Semiconductor Corporation Rev. A2, March 2003

4 Typical Characteristics I D, Drain Current [A] Top : 15.0 V 10.0 V 8.0 V 7.0 V 6.0 V 5.5 V 5.0 V Bottom : 4.5 V Note : μ s Pulse Test 2. T C = , Drain-Source Voltage [V] I D, Drain Current [A] , Gate-Source Voltage [V] 1. = 30V μ s Pulse Test Figure 1. On-Region Characteristics Figure 2. Transfer Characteristics 0.05 R DS(ON) [Ω ], Drain-Source On-Resistance = 10V = 20V Note : T J = I D, Drain Current [A] Figure 3. On-Resistance Variation vs. Drain Current and Gate Voltage I DR, Reverse Drain Current [A] = 0V μ s Pulse Test V SD, Source-Drain voltage [V] Figure 4. Body Diode Forward Voltage Variation vs. Source Current and Temperature C iss = C gs + C gd (C ds = shorted) C oss = C ds + C gd C rss = C gd = 30V Capacitance [pf] C oss C iss C rss 1. = 0 V 2. f = 1 MHz, Gate-Source Voltage [V] = 48V Note : I D = 50A , Drain-Source Voltage [V] Figure 5. Capacitance Characteristics Q G, Total Gate Charge [nc] Figure 6. Gate Charge Characteristics 2003 Fairchild Semiconductor Corporation Rev. A2, March 2003

5 Typical Characteristics (Continued) BS, (Normalized) Drain-Source Breakdown Voltage = 0 V 2. I D = 250 μ A R DS(ON), (Normalized) Drain-Source On-Resistance = 10 V 2. I D = 25 A T J, Junction Temperature [ o C] Figure 7. Breakdown Voltage Variation vs. Temperature T J, Junction Temperature [ o C] Figure 8. On-Resistance Variation vs. Temperature 10 3 Operation in This Area is Limited by R DS(on) I D, Drain Current [A] T C = 25 o C 2. T J = 175 o C 3. Single Pulse DC 10 ms 1 ms 100μ s I D, Drain Current [A] , Drain-Source Voltage [V] T C, Case Temperature [ ] Figure 9. Maximum Safe Operating Area Figure 10. Maximum Drain Current vs. Case Temperature Z θ JC (t), Therm al Response D= sing le p ulse 1. Z θ JC (t) = 1.24 /W M ax. 2. D u t y Fa c t o r, D = t 1 /t 2 3. T JM - T C = P DM * Z θ JC (t) P DM t 1 t t 1, Square W ave Pulse Duration [sec] Figure 11. Transient Thermal Response Curve 2003 Fairchild Semiconductor Corporation Rev. A2, March 2003

6 Gate Charge Test Circuit & Waveform 12V 200nF 50KΩ 300nF Same Type as DUT 10V Q g Q gs Q gd 3mA DUT Charge Resistive Switching Test Circuit & Waveforms R L 90% R G V DD 10V DUT 10% t d(on) t r t d(off) tf t on t off Unclamped Inductive Switching Test Circuit & Waveforms L 1 E AS = ---- LI 2 2 AS BS BS -V DD I D BS I AS R G V DD I D (t) 10V DUT V DD (t) t p t p Time 2003 Fairchild Semiconductor Corporation Rev. A2, March 2003

7 Peak Diode Recovery dv/dt Test Circuit & Waveforms DUT + _ I SD L Driver R G Same Type as DUT V DD dv/dt controlled by RG I SD controlled by pulse period ( Driver ) Gate Pulse Width D = Gate Pulse Period 10V I FM, Body Diode Forward Current I SD ( DUT ) di/dt I RM Body Diode Reverse Current ( DUT ) Body Diode Recovery dv/dt V SD V DD Body Diode Forward Voltage Drop 2003 Fairchild Semiconductor Corporation Rev. A2, March 2003

8 Package Dimensions TO ± ±0.20 (1.70) 1.30 ±0.10 (8.70) ø3.60 ± ± ± ±0.20 (1.46) (1.00) 1.27 ±0.10 (45 ) (3.00) (3.70) 1.52 ± ± ± MAX. 2.54TYP [2.54 ±0.20] 0.80 ± TYP [2.54 ±0.20] ± ±0.20 Dimensions in Millimeters 2003 Fairchild Semiconductor Corporation Rev. A2, March 2003

9 TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACEx ActiveArray Bottomless CoolFET CROSSVOLT DOME EcoSPARK E 2 CMOS EnSigna DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. LIFE SUPPORT POLICY FACT FACT Quiet series FAST FASTr FRFET GlobalOptoisolator GTO HiSeC I 2 C Across the board. Around the world. The Power Franchise Programmable Active Droop FAIRCHILD S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in significant injury to the user. ImpliedDisconnect ISOPLANAR LittleFET MicroFET MicroPak MICROWIRE MSX MSXPro OCX OCXPro OPTOLOGIC OPTOPLANAR PACMAN POP Power247 PowerTrench QFET QS QT Optoelectronics Quiet Series RapidConfigure RapidConnect SILENT SWITCHER SMART START SPM Stealth SuperSOT -3 SuperSOT -6 SuperSOT -8 SyncFET TinyLogic TruTranslation UHC UltraFET VCX 2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Definition Advance Information Formative or In Design This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. Preliminary First Production This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. No Identification Needed Full Production This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. Obsolete Not In Production This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only Fairchild Semiconductor Corporation Rev. I2

10 ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor s product/patent coverage may be accessed at Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by ON Semiconductor. Typical parameters which may be provided in ON Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including Typicals must be validated for each customer application by customer s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLICATION ORDERING INFORMATION LITERATURE FULFILLMENT: Literature Distribution Center for ON Semiconductor E. 32nd Pkwy, Aurora, Colorado USA Phone: or Toll Free USA/Canada Fax: or Toll Free USA/Canada orderlit@onsemi.com Semiconductor Components Industries, LLC N. American Technical Support: Toll Free USA/Canada Europe, Middle East and Africa Technical Support: Phone: Japan Customer Focus Center Phone: ON Semiconductor Website: Order Literature: For additional information, please contact your local Sales Representative

11 Mouser Electronics Authorized Distributor Click to View Pricing, Inventory, Delivery & Lifecycle Information: Fairchild Semiconductor: