Features. Reduced r DS(ON) DRAIN GATE

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1 FDH27N5 27A, 5V,.19 Ohm, N-Channel SMPS Power MOSFET Applications Switch Mode Power Supplies(SMPS), such as PFC Boost Two-Switch Forward Converter Single Switch Forward Converter Flyback Converter Buck Converter High Speed Switching Features August 22 Low Gate Charge Qg results in Simple Drive Requirement Improved Gate, Avalanche and High Reapplied dv/dt Ruggedness Reduced r DS(ON) Reduced Miller Capacitance and Low Input Capacitance Improved Switching Speed with Low EMI FDH27N5 Package JEDEC TO-247 SOURCE DRAIN GATE 175 C Rated Junction Temperature Symbol D DRAIN (FLANGE) G S Absolute Maximum Ratings TC = 25 o C unless otherwise noted Symbol Parameter Ratings Units S Drain to Source Voltage 5 V Gate to Source Voltage ±3 V Drain Current I D Continuous (T C = 25 o C, = 1V) 27 A Continuous (T C = 1 o C, = 1V) 19 A Pulsed (Note 1) 18 A P D Power dissipation Derate above 25 o C T J, T STG Operating and Storage Temperature -55 to 175 Soldering Temperature for 1 seconds 3 (1.6mm from case) Mounting Torque, 8-32 or M3 Screw 1ibf*in (1.1N*m) Thermal Characteristics 45 3 W W/ o C o C o C R θjc Thermal Resistance Junction to Case.33 o C/W R θcs Thermal Resistance Case to Sink, Flat, Greased Surface.24 TYP o C/W R θja Thermal Resistance Junction to Ambient 4 o C/W 22 Fairchild Semiconductor Corporation FDH27N5 Rev. A2

2 Package Marking and Ordering Information Device Marking Device Package Reel Size Tape Width Quantity FDH27N5 FDH27N5 TO-247 Tube - 3 Electrical Characteristics Tc = 25 C (unless otherwise noted) Symbol Parameter Test Conditions Min Typ Max Units Statics B VDSS Drain to Source Breakdown Voltage I D = 25µA, = V V B VDSS / T J Breakdown Voltage Temp. Coefficient Reference to 25 o C I D = 1mA V/ C r DS(ON) Drain to Source On-Resistance = 1V, I D = 13.5A Ω (th) Gate Threshold Voltage =, I D = 25µA V V I DSS Zero Gate Voltage Drain Current DS = 5V T C =25 o C µa = V T C = 15 o C I GSS Gate to Source Leakage Current = ±3V - - ±1 na FDH27N5 Dynamics g fs Forward Transconductance = 5V, I D = 13.5A S Q g(tot) Total Gate Charge at 1V = 1V nc Q gs Gate to Source Gate Charge = 4V nc Q gd Gate to Drain Miller Charge I D = 27A nc t d(on) Turn-On Delay Time = 25V ns t r Rise Time I D = 27A ns t d(off) Turn-Off Delay Time R G = 4.3Ω ns t f Fall Time R D = 9.3Ω ns C ISS Input Capacitance pf = 25V, = V C OSS Output Capacitance pf f = 1MHz C RSS Reverse Transfer Capacitance pf Avalanche Characteristics E AS Single Pulse Avalanche Energy (Note 2) mj I AR Avalanche Current A Drain-Source Diode Characteristics I S Continuous Source Current (Body Diode) MOSFET symbol showing the D A Pulsed Source Current (Note 1) integral reverse I SM (Body Diode) p-n junction diode. S G A V SD Source to Drain Diode Voltage I SD = 27A V t rr Reverse Recovery Time I SD = 27A, di SD /dt = 1A/µs ns Q RR Reverse Recovered Charge I SD = 27A, di SD /dt = 1A/µs µc Notes: 1: Repetitive rating; pulse width limited by maximum junction temperature 2: Starting T J = 25 C, L = 7mH, I AS = 27A 22 Fairchild Semiconductor Corporation FDH27N5 Rev. A2

3 Typical Characteristics I D, DRAIN TO SOURCE CURRENT (A) T J = 25 o C DESCENDING 1V 7V 6V 5.5V 5V 4.5V PULSE DURATION = 8µs DUTY CYCLE =.5% MAX I D, DRAIN TO SOURCE CURRENT (A) T J = 175 o C DESCENDING 1V 6V 5.5V 5V 4.5V 4V PULSE DURATION = 8µs DUTY CYCLE =.5% MAX FDH27N5, DRAIN TO SOURCE VOLTAGE (V), DRAIN TO SOURCE VOLTAGE (V) Figure 1. Output Characteristics Figure 2. Output Characteristics I D, DRAIN CURRENT (A) PULSE DURATION = 8µs DUTY CYCLE =.5% MAX = 8V T J = 175 o C T J = 25 o C NORMALIZED DRAIN to SOURCE ON RESISTANCE PULSE DURATION = 8µs DUTY CYCLE =.5% MAX.5 = 1V, I D = 13.5A , GATE TO SOURCE VOLTAGE (V) T J, JUNCTION TEMPERATURE ( o C) Figure 3. Transfer Characteristics Figure 4. Normalized Drain To Source On Resistance vs Junction Temperatrue C, CAPACITANCE (pf) 1 = V, f = 1MHz C ISS 1 C OSS 1 C RSS , DRAIN TO SOURCE VOLTAGE (V) Figure 5. Capacitance vs Drain To Source Voltage, GATE TO SOURCE VOLTAGE (V) I D = 27A 25V 1V 4V Q g, GATE CHARGE (nc) Figure 6. Gate Charge Waveforms For Constant Gate Current 7 22 Fairchild Semiconductor Corporation FDH27N5 Rev. A2

4 Typical Characteristics (Continued) I SD, SOURCE TO DRAIN CURRENT (A) T J = 175 o C T J = 25 o C I D, DRAIN CURRENT (A) OPERATION IN THIS AREA LIMITED BY R DS(ON) T C = 25 o C 1µs 1ms 1ms DC FDH27N5 V SD, SOURCE TO DRAIN VOLTAGE (V), DRAIN TO SOURCE VOLTAGE (V) Figure 7. Body Diode Forward Voltage vs Body Diode Current Figure 8. Maximum Safe Operating Area 3 25 I D, DRAIN CURRENT (A) T C, CASE TEMPERATURE ( C) Figure 9. Maximum Drain Current vs Case Temperature Z θjc, NORMALIZED THERMAL IMPEDANCE SINGLE PULSE t 1, RECTANGULAR PULSE DURATION (s) Figure 1. Normalized Maximum Transient Thermal Impedance P D t 1 DUTY FACTOR, D = t 1 / t 2 PEAK T J = (P D X Z θjc X R θjc ) + T C t 2 22 Fairchild Semiconductor Corporation FDH27N5 Rev. A2

5 Test Circuits and Waveforms BS FDH27N5 t P L I AS VARY t P TO OBTAIN REQUIRED PEAK I AS R G + - DUT V t P I AS.1Ω t AV Figure 11. Unclamped Energy Test Circuit Figure 12. Unclamped Energy Waveforms R L Q g(tot) = 1V + - DUT = 1V I g(ref) Qg(TH) Q gs Q gd I g(ref) Figure 13. Gate Charge Test Circuit Figure 14. Gate Charge Waveforms t ON t OFF t d(on) t d(off) R L t r t f 9% 9% + - 1% 1% R GS DUT 9% 1% 5% PULSE WIDTH 5% Figure 15. Switching Time Test Circuit Figure 16. Switching Time Waveform 22 Fairchild Semiconductor Corporation FDH27N5 Rev. A2

6 TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACEx ActiveArray Bottomless CoolFET CROSSVOLT DOME EcoSPARK E 2 CMOS TM EnSigna TM DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. LIFE SUPPORT POLICY FAIRCHILD S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in significant injury to the user. PRODUCT STATUS DEFINITIONS Definition of Terms FACT FACT Quiet Series FAST â FASTr FRFET GlobalOptoisolator GTO HiSeC I 2 C Across the board. Around the world. The Power Franchise Programmable Active Droop ImpliedDisconnect ISOPLANAR LittleFET MicroFET MicroPak MICROWIRE MSX MSXPro OCX OCXPro OPTOLOGIC â OPTOPLANAR PACMAN POP Power247 PowerTrench â QFET QS QT Optoelectronics Quiet Series RapidConfigure RapidConnect SILENT SWITCHER â SMART START 2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. Datasheet Identification Product Status Definition SPM Stealth SuperSOT -3 SuperSOT -6 SuperSOT -8 SyncFET TinyLogic TruTranslation UHC UltraFET â VCX Advance Information Preliminary No Identification Needed Formative or In Design First Production Full Production This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. Obsolete Not In Production This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. Rev. I1

Features GATE SOURCE. Symbol Parameter Ratings Units V DSS Drain to Source Voltage 400 V V GS Gate to Source Voltage ±30 V Drain Current

Features GATE SOURCE. Symbol Parameter Ratings Units V DSS Drain to Source Voltage 400 V V GS Gate to Source Voltage ±30 V Drain Current A, 4V,.55 Ohm, N-Channel SMPS Power MOSFET Applications Switch Mode Power Supplies (SMPS) Uninterruptable Power Supply High Speed Power Switching Features Low Gate Charge Q g results in Simple Drive Requirement