IRF610. Features. 3.3A, 200V, Ohm, N-Channel Power MOSFET. Ordering Information. Symbol. Packaging. Data Sheet January 2002
|
|
- Kelley Parsons
- 5 years ago
- Views:
Transcription
1 IRF6 Data Sheet January A, 2V,.5 Ohm, N-Channel Power MOSFET This N-Channel enhancement mode silicon gate power field effect transistor is an advanced power MOSFET designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. All of these power MOSFETs are designed for applications such as switching regulators, switching convertors, motor drivers, relay drivers, and drivers for high power bipolar switching transistors requiring high speed and low gate drive power. These types can be operated directly from integrated circuits. Formerly developmental type TA7442. Ordering Information PART NUMBER PACKAGE BRAND IRF6 TO-22AB IRF6 NOTE: When ordering, use the entire part number. Features 3.3A, 2V r DS(ON) =.5Ω Single Pulse Avalanche Energy Rated SOA is Power Dissipation Limited Nanosecond Switching Speeds Linear Transfer Characteristics High Input Impedance Related Literature - TB334 Guidelines for Soldering Surface Mount Components to PC Boards Symbol G D S Packaging JEDEC TO-22AB SOURCE DRAIN GATE DRAIN (FLANGE) 22 Fairchild Semiconductor Corporation IRF6 Rev. B
2 IRF6 Absolute Maximum Ratings T C = 25 o C, Unless Otherwise Specified IRF6 UNITS Drain to Source Voltage (Note ) V Drain to Gate Voltage (R GS = 2kΩ) (Note ) V DGR 2 V Continuous Drain Current I D T C = o C I D A A Pulsed Drain Current (Note 2) I DM 8 A Gate to Source Voltage V GS ±2 V Maximum Power Dissipation P D 43 W Linear Derating Factor W/ o C Single Pulse Avalanche Energy Rating (Note 4) E AS 46 mj Operating and Storage Temperature T J, T STG -55 to 5 o C Maximum Temperature for Soldering Leads at.63in (.6mm) from Case for s t L 3 Package Body for s, See Techbrief T pkg 26 o C o C CAUTION: Stresses above those listed in Absolute Maximum Ratings may cause permanent damage to the device. This is a stress only rating and operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied. NOTE:. T J = 25 o C to 25 o C. Electrical Specifications T C = 25 o C, Unless Otherwise Specified PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS Drain to Source Breakdown Voltage BS V GS = V, I D = 25µA (Figure ) V Gate Threshold Voltage V GS(TH) = V GS, I D = 25µA 2-4 V Zero Gate Voltage Drain Current I DSS = Max Rating, V GS = V µa = Max Rating x.8, V GS = V, T J = 25 o C µa On-State Drain Current (Note 2) I D(ON) > I D(ON) x r DS(ON)MAX, V GS = V (Figure 7) A Gate to Source Leakage Current I GSS V GS = ±2V - - ± na Drain to Source On Resistance (Note 2) r DS(ON) V GS = V, I D =.6A (Figures 8, 9) -..5 Ω Forward Transconductance (Note 2) g fs 5V, I D =.6A (Figure 2) S Turn-On Delay Time t d(on) V DD = V, I D 3.3A, R G = 24Ω, R L = 3Ω ns Rise Time t r MOSFET Switching Times are Essentially Independent of Operating ns Turn-Off Delay Time t d(off) Temperature ns Fall Time t f ns Total Gate Charge (Gate to Source + Gate to Drain) Q g(tot) V GS = V, I D = 3.3A, =.8 x Rated BS, I g(ref) =.5mA (Figure 4) Gate Charge is Essentially Independent of Operating Temperature nc Gate to Source Charge Q gs nc Gate to Drain Miller Charge Q gd nc Input Capacitance C ISS V GS = V, = 25V, f = MHz pf Output Capacitance C OSS (Figure ) pf Reverse Transfer Capacitance C RSS pf Internal Drain Inductance L D Measured From the Contact Screw on Tab to Center of Die Measured From the Drain Lead, 6mm (.25in) From Package to Center of Die Internal Source Inductance L S Measured From the Source Lead, 6mm (.25in) from Header to Source Bonding Pad Modified MOSFET Symbol Showing the Internal Device Inductances D nh nh nh Thermal Resistance Junction to Case R θjc o C/W Thermal Resistance Junction to Ambient R θja Free Air Operation o C/W G L D L S S 22 Fairchild Semiconductor Corporation IRF6 Rev. B
3 IRF6 Source to Drain Diode Specifications PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS Continuous Source to Drain Current I SD Modified MOSFET Symbol D A Pulse Source to Drain Current I Showing the Integral SDM A (Note 3) Reverse P-N Junction Rectifier G S Source to Drain Diode Voltage (Note 2) V SD T J = 25 o C, I SD = 3.3A, V GS = V (Figure 3) V Reverse Recovery Time t rr T J = 25 o C, I SD = 3.3A, di SD /dt = A/µs ns Reverse Recovery Charge Q RR T J = 25 o C, I SD = 3.3A, di SD /dt = A/µs µc NOTES: 2. Pulse test: pulse width 3µs, duty cycle 2%. 3. Repetitive rating: pulse width limited by maximum junction temperature. See Transient Thermal Impedance curve (Figure 3). 4. V DD = 5V, starting T J = 25 o C, L = 6.4mH, R G = 25Ω, peak I AS = 3.3A. Typical Performance Curves Unless Otherwise Specified.2 5. POWER DISSIPATION MULTIPLIER T C, CASE TEMPERATURE ( o C) T C, CASE TEMPERATURE ( o C) FIGURE. NORMALIZED POWER DISSIPATION vs CASE TEMPERATURE FIGURE 2. MAXIMUM CONTINUOUS DRAIN CURRENT vs CASE TEMPERATURE Z θjc, TRANSIENT THERMAL IMPEDANCE ( o C/W) P DM.2. SINGLE PULSE t, RECTANGULAR PULSE DURATION (S) t t 2 NOTES: DUTY FACTOR: D = t /t 2 PEAK T J = P DM x Z θjc + T C FIGURE 3. MAXIMUM TRANSIENT THERMAL IMPEDANCE 22 Fairchild Semiconductor Corporation IRF6 Rev. B
4 IRF6 Typical Performance Curves Unless Otherwise Specified (Continued). OPERATION IN THIS AREA MAY BE LIMITED BY r DS(ON) T J = 5 o C SINGLE PULSE T C = 25 o C, DRAIN TO SOURCE VOLTAGE (V) µs µs ms ms DC V GS = V PULSE DURATION = 8µs DUTY CYCLE =.5% MAX V GS = 4V , DRAIN TO SOURCE VOLTAGE (V) V GS = 8V V GS = 7V V GS = 6V V GS = 5V FIGURE 4. FORWARD BIAS SAFE OPERATING AREA FIGURE 5. OUTPUT CHARACTERISTICS PULSE DURATION = 8µs DUTY CYCLE =.5% MAX V GS = 4V V GS = V V GS = 8V V GS = 7V V GS = 6V V GS = 5V. PULSE DURATION = 8µs DUTY CYCLE =.5% MAX 5V T J = 5 o C T J = 25 o C , DRAIN TO SOURCE VOLTAGE (V) V GS, GATE TO SOURCE VOLTAGE (V) FIGURE 6. SATURATION CHARACTERISTICS FIGURE 7. TRANSFER CHARACTERISTICS r DS(ON), ON STATE RESISTANCE (Ω) PULSE DURATION = 8µs DUTY CYCLE =.5% MAX V GS = V V GS = 2V NORMALIZED DRAIN TO SOURCE ON RESISTANCE PULSE DURATION = 8µs DUTY CYCLE =.5% MAX V GS = V, I D = 3.2A T J, JUNCTION TEMPERATURE ( o C) FIGURE 8. DRAIN TO SOURCE ON RESISTANCE vs GATE VOLTAGE AND DRAIN CURRENT FIGURE 9. NORMALIZED DRAIN TO SOURCE ON RESISTANCE vs JUNCTION TEMPERATURE 22 Fairchild Semiconductor Corporation IRF6 Rev. B
5 IRF6 Typical Performance Curves Unless Otherwise Specified (Continued).25 I D = 25µA 4 V GS = V, f = MHz NORMALIZED DRAIN TO SOURCE BREAKDOWN VOLTAGE C, CAPACITANCE (pf) C ISS = C GS + C GD C RSS = C GD C OSS = C DS + C GD C RSS C OSS C ISS T J, JUNCTION TEMPERATURE ( o C) , DRAIN TO SOURCE VOLTAGE (V) FIGURE. NORMALIZED DRAIN TO SOURCE BREAKDOWN VOLTAGE vs JUNCTION TEMPERATURE FIGURE. CAPACITANCE vs DRAIN TO SOURCE VOLTAGE g fs, TRANSCONDUCTANCE (S) PULSE DURATION = 8µs DUTY CYCLE =.5% MAX 5V T J = 25 o C T J = 5 o C I SD, SOURCE TO DRAIN CURRENT (A) PULSE DURATION = 8µs DUTY CYCLE =.5% MAX T J = 5 o C T J = 25 o C V SD, SOURCE TO DRAIN VOLTAGE (V).6 2. FIGURE 2. TRANSCONDUCTANCE vs DRAIN CURRENT FIGURE 3. SOURCE TO DRAIN DIODE VOLTAGE V GS, GATE TO SOURCE VOLTAGE (V) I D = 3.2A = 4V = V = 6V Q g, GATE CHARGE (nc) FIGURE 4. GATE TO SOURCE VOLTAGE vs GATE CHARGE 22 Fairchild Semiconductor Corporation IRF6 Rev. B
6 IRF6 Test Circuits and Waveforms BS L t P VARY t P TO OBTAIN REQUIRED PEAK I AS V GS R G + V DD - I AS V DD DUT V t P I AS.Ω t AV FIGURE 5. UNCLAMPED ENERGY TEST CIRCUIT FIGURE 6. UNCLAMPED ENERGY WAVEFORMS t ON t d(on) t OFF t d(off) R L t r t f 9% 9% + R G V DD - % % DUT 9% V GS V GS % 5% PULSE WIDTH 5% FIGURE 7. SWITCHING TIME TEST CIRCUIT FIGURE 8. RESISTIVE SWITCHING WAVEFORMS CURRENT REGULATOR (ISOLATED SUPPLY) V DD 2V BATTERY.2µF 5kΩ.3µF SAME TYPE AS DUT Q gs Q gd Q g(tot) V GS D G DUT I g(ref) I G CURRENT SAMPLING RESISTOR S I D CURRENT SAMPLING RESISTOR I G(REF) FIGURE 9. GATE CHARGE TEST CIRCUIT FIGURE 2. GATE CHARGE WAVEFORMS 22 Fairchild Semiconductor Corporation IRF6 Rev. B
7 TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACEx Bottomless CoolFET CROSSVOLT DenseTrench DOME EcoSPARK E 2 CMOS TM EnSigna TM FACT FACT Quiet Series STAR*POWER is used under license DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. LIFE SUPPORT POLICY FAIRCHILD S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein:. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in significant injury to the user. PRODUCT STATUS DEFINITIONS Definition of Terms FAST FASTr FRFET GlobalOptoisolator GTO HiSeC ISOPLANAR LittleFET MicroFET MicroPak MICROWIRE OPTOLOGIC OPTOPLANAR PACMAN POP Power247 PowerTrench QFET QS QT Optoelectronics Quiet Series SILENT SWITCHER SMART START STAR*POWER Stealth SuperSOT -3 SuperSOT -6 SuperSOT -8 SyncFET TinyLogic TruTranslation UHC UltraFET 2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. Datasheet Identification Product Status Definition VCX Advance Information Preliminary No Identification Needed Formative or In Design First Production Full Production This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. Obsolete Not In Production This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. Rev. H4
8 This datasheet has been download from: Datasheets for electronics components.
IRF630, RF1S630SM. 9A, 200V, Ohm, N-Channel Power MOSFETs. Features. Ordering Information. Symbol. Packaging. Data Sheet January 2002
IRF3, RFS3SM Data Sheet January 9A, V,. Ohm, N-Channel Power MOSFETs These are N-Channel enhancement mode silicon gate power field effect transistors. They are advanced power MOSFETs designed, tested,
More informationBUZ71. 14A, 50V, Ohm, N-Channel Power MOSFET. Features. Ordering Information. Symbol. Packaging. Data Sheet December 2001
Data Sheet December 21 14A, 5V,.1 Ohm, N-Channel Power MOSFET This is an N-Channel enhancement mode silicon gate power field effect transistor designed for applications such as switching regulators, switching
More informationRFD4N06L, RFD4N06LSM. 4A, 60V, Ohm, Logic Level, N-Channel Power MOSFETs. Features. Ordering Information. Symbol. Packaging
RFDNL, RFDNLSM Data Sheet January A, V,. Ohm, Logic Level, N-Channel Power MOSFETs The RFDNL, RFDNLSM are N-Channel enhancement mode silicon gate power field effect transistors specifically designed for
More informationRFP2N20L. 2A, 200V, Ohm, Logic Level, N-Channel Power MOSFET. Features. Ordering Information. Symbol. Packaging. Data Sheet January 2002
RFPNL Data Sheet January A, V,.5 Ohm, Logic Level, N-Channel Power MOSFET The RFPNL N-Channel enhancement mode silicon gate power field effect transistor is specifically designed for use with logic level
More informationFeatures. TO-3P IRFP Series
500V N-Channel MOSFET November 2001 General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild s proprietary, planar, DMOS technology. This advanced
More informationRFP12N10L. Features. 12A, 100V, Ohm, Logic Level, N-Channel Power MOSFET. Ordering Information. Symbol. Packaging. Data Sheet April 2005
RFP12N1L Data Sheet April 25 12A, 1V,.2 Ohm, Logic Level, N-Channel Power MOSFET These are N-Channel enhancement mode silicon gate power field effect transistors specifically designed for use with logic
More informationFeatures. TO-220F IRFS Series
400V N-Channel MOSFET General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild s proprietary, planar, DMOS technology. This advanced technology has
More informationQFET TM FQL40N50. Features. TO-264 FQL Series
500V N-Channel MOSFET May 2001 QFET TM General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild s proprietary, planar stripe, DMOS technology. This
More informationQFET TM FQA65N20. Features. TO-3P FQA Series
200V N-Channel MOSFET August 2001 QFET TM General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild s proprietary, planar stripe, DMOS technology.
More informationFeatures. TO-3PN IRFP Series
500V N-Channel MOSFET General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild s proprietary, planar stripe, DMOS technology. This advanced technology
More informationFeatures. TO-220F SSS Series
600V N-Channel MOSFET General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild s proprietary, planar, DMOS technology. This advanced technology has
More informationFeatures D D. I-PAK FQU Series
1000V N-Channel MOSFET General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild s proprietary, planar stripe, DMOS technology. This advanced technology
More informationFeatures. Reduced r DS(ON) DRAIN GATE
FDH27N5 27A, 5V,.19 Ohm, N-Channel SMPS Power MOSFET Applications Switch Mode Power Supplies(SMPS), such as PFC Boost Two-Switch Forward Converter Single Switch Forward Converter Flyback Converter Buck
More informationQFET TM FQT4N20L. Features. SOT-223 FQT Series
200V LOGIC N-Channel MOSFET May 2001 QFET TM General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild s proprietary, planar stripe, DMOS technology.
More informationIRF130, IRF131, IRF132, IRF133
October 1997 SEMICONDUCTOR IRF13, IRF131, IRF132, IRF133 12A and 14A, 8V and 1V,.16 and.23 Ohm, N-Channel Power MOSFETs Features Description 12A and 14A, 8V and 1V r DS(ON) =.16Ω and.23ω Single Pulse Avalanche
More informationFeatures. (Note 1b) 1.2. (Note 1c) 1.0. (Note 1c) 125
NDS97 V P-Channel PowerTrench MOSFET May NDS97 General Description This P-Channel MOSFET is a rugged gate version of Fairchild Semiconductor s advanced PowerTrench process. It has been optimized for power
More informationFeatures GATE SOURCE. Symbol Parameter Ratings Units V DSS Drain to Source Voltage 400 V V GS Gate to Source Voltage ±30 V Drain Current
A, 4V,.55 Ohm, N-Channel SMPS Power MOSFET Applications Switch Mode Power Supplies (SMPS) Uninterruptable Power Supply High Speed Power Switching Features Low Gate Charge Q g results in Simple Drive Requirement
More informationIRFS650B IRFS650B. 200V N-Channel MOSFET. Absolute Maximum Ratings T C = 25 C unless otherwise noted. Thermal Characteristics. November 2001.
200V N-Channel MOSFET November 2001 General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild s proprietary, planar, DMOS technology. This advanced
More informationQFET TM FQP13N06. Features G D. TO-220 FQP Series
60V N-Channel MOSFET May 2001 QFET TM General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild s proprietary, planar stripe, DMOS technology. This
More informationFDH15N50 / FDP15N50 / FDB15N50
15A, V,.38 Ohm, N-Channel SMPS Power MOSFET Applications Switch Mode Power Supplies(SMPS), such as PFC Boost Two-Switch Forward Converter Single Switch Forward Converter Flyback Converter Buck Converter
More informationFQA11N90C FQA11N90C. 900V N-Channel MOSFET. Absolute Maximum Ratings T C = 25 C unless otherwise noted. Thermal Characteristics.
900V N-Channel MOSFET General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild s proprietary, planar stripe, DMOS technology. This advanced technology
More informationFeatures. I 2 -PAK FQI Series
100V N-Channel MOSFET General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild s proprietary, planar stripe, DMOS technology. This advanced technology
More informationQFET TM FQP20N06. Features G D. TO-220 FQP Series
60V N-Channel MOSFET May 2001 QFET TM General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild s proprietary, planar stripe, DMOS technology. This
More informationQFET TM FQP85N06. Features G D. TO-220 FQP Series
60V N-Channel MOSFET May 2001 QFET TM General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild s proprietary, planar stripe, DMOS technology. This
More informationQFET FQA36P15. Features
150V P-Channel MOSFET QFET General Description These P-Channel enhancement mode power field effect transistors are produced using Fairchild s proprietary, planar stripe, DMOS technology. This advanced
More informationFeatures. TO-220F IRFS Series
200V N-Channel MOSFET General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild s proprietary, planar, DMOS technology. This advanced technology has
More informationQFET TM FQP13N06L. Features G D. TO-220 FQP Series
60V LOGIC N-Channel MOSFET May 2001 QFET TM General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild s proprietary, planar stripe, DMOS technology.
More informationFQP3N80C/FQPF3N80C 800V N-Channel MOSFET General Description These N-Channel enhancement mode power field effect transistors are
800V N-Channel MOSFET General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild s proprietary, planar stripe, DMOS technology. This advanced technology
More informationFeatures. TA=25 o C unless otherwise noted. (Note 1b) 0.9. (Note 1c) 0.7
April V Integrated P-Channel PowerTrench MOSFET and Schottky Diode General Description The combines the exceptional performance of Fairchild's PowerTrench MOSFET technology with a very low forward voltage
More informationQFET TM FQD18N20V2 / FQU18N20V2
200V N-Channel MOSFET General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild s proprietary, planar stripe, DMOS technology. This advanced technology
More informationFeatures. TO-220F SSS Series
600V N-Channel MOSFET General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild s proprietary, planar, DMOS technology. This advanced technology has
More informationQFET TM FQP17P10. Features. TO-220 FQP Series
100V P-Channel MOSFET QFET TM General Description These P-Channel enhancement mode power field effect transistors are produced using Fairchild s proprietary, planar stripe, DMOS technology. This advanced
More informationFDB5800 N-Channel Logic Level PowerTrench MOSFET
FDB58 N-Channel Logic Level PowerTrench MOSFET 6V, 8A, 7mΩ Features r DS(ON) = 5.5mΩ (Typ.), V GS = 5V, I D = 8A High performance trench technology for extermely low Rdson Low Gate Charge High power and
More informationQFET TM FQP4N90C/FQPF4N90C
900V N-Channel MOSFET General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild s proprietary, planar stripe, DMOS technology. This advanced technology
More informationQFET FQE10N20LC. Features. TO-126 FQE Series
200V Logic N-Channel MOSFET QFET General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild s proprietary, planar stripe, DMOS technology. This advanced
More informationFeatures. TO-3P FQA Series
FQA11N90 FQA11N90 900V N-Channel MOSFET September 2000 QFET TM General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild s proprietary, planar stripe,
More informationQFET TM FQP13N50C/FQPF13N50C
500V N-Channel MOSFET General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild s proprietary, planar stripe, DMOS technology. This advanced technology
More informationANODE 2 CATHODE ANODE 1
ISL9KP3 A, V Stealth Dual Diode General Description The ISL9KP3 is a Stealth dual diode optimized for low loss performance in high frequency hard switched applications. The Stealth family exhibits low
More informationFeatures S 1. T A=25 o C unless otherwise noted. Symbol Parameter Ratings Units. Pulsed 6 Power Dissipation for Single Operation (Note 1a) 0.
V N-Channel PowerTrench MOSFET October General Description This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional
More informationFeatures. TO-220F IRFS Series
500V N-Channel MOSFET General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild s proprietary, planar, DMOS technology. This advanced technology has
More informationQFET FQP9N25C/FQPF9N25C
250V N-Channel MOSFET General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild s proprietary, planar stripe, DMOS technology. This advanced technology
More informationFeatures. TA=25 o C unless otherwise noted
3V P-Channel PowerTrench MOSFET October 2 General Description This P-Channel MOSFET is a rugged gate version of Fairchild Semiconductor s advanced PowerTrench process. It has been optimized for power management
More informationDescription. TO-220 FCP Series. Symbol Parameter FDP61N20 Unit. Maximum Lead Temperature for Soldering Purpose, 300 C 1/8 from Case for 5 Seconds
FDP61N20 200V N-Channel MOSFET Features 61A, 200V, R DS(on) = 0.041Ω @ = 10 V Low gate charge ( typical 58 nc) Low C rss ( typical 80 pf) Fast switching 100% avalanche tested Improved dv/dt capability
More informationFeatures. TO-220 FQP Series
FQP4N80 FQP4N80 800V N-Channel MOSFET September 000 QFET TM General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild s proprietary, planar stripe,
More informationDescription. TO-3P FDA Series. Symbol Parameter FDA70N20 Unit. Maximum Lead Temperature for Soldering Purpose, 300 C 1/8 from Case for 5 Seconds
FDA70N20 200V N-Channel MOSFET Features 70A, 200V, R DS(on) = 0.035Ω @ = 10 V Low gate charge ( typical 66 nc) Low C rss ( typical 89 pf) Fast switching 100% avalanche tested Improved dv/dt capability
More informationFeatures. TO-220 FQP Series
FQP70N10 FQP70N10 100V N-Channel MOSFET August 2000 QFET TM General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild s proprietary, planar stripe,
More informationNDS0605 P-Channel Enhancement Mode Field Effect Transistor
NDS65 P-Channel Enhancement Mode Field Effect Transistor July NDS65 General Description These P-Channel enhancement mode field effect transistors are produced using Fairchild s proprietary, high cell density,
More informationDatasheetArchive.com. Request For Quotation
DatasheetArchive.com Request For Quotation Order the parts you need from our real-time inventory database. Simply complete a request for quotation form with your part information and a sales representative
More informationFQA8N100C 1000V N-Channel MOSFET
FQA8N100C 1000V N-Channel MOSFET Features 8A, 1000V, R DS(on) = 1.45Ω @ = 10 V Low gate charge (typical 53 nc) Low C rss (typical 16 pf) Fast switching 100% avalanche tested Improved dv/dt capability Description
More informationFeatures G D. TO-220 FQP Series
FQP34N20L FQP34N20L 200V LOGIC N-Channel MOSFET June 2000 QFET TM General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild s proprietary, planar
More informationDescription. Symbol Parameter FDAF69N25 Unit. (Note 2) Maximum Lead Temperature for Soldering Purpose, 300 C 1/8 from Case for 5 Seconds
FDAF69N25 250V N-Channel MOSFET Features 34A, 250V, R DS(on) = 0.041Ω @ = 10 V Low gate charge ( typical 77 nc) Low Crss ( typical 84 pf) Fast switching Improved dv/dt capability Description September
More informationFeatures. TA=25 o C unless otherwise noted
Dual N-Channel.V Specified PowerTrench MOSFET July 3 General Description These N-Channel.V specified MOSFETs use Fairchild Semiconductor s advanced PowerTrench process. It has been optimized for power
More informationonlinecomponents.com
FQPF7N60 FQPF7N60 600V N-Channel MOSFET April 2000 QFET TM General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild s proprietary, planar stripe,
More informationN-Channel Logic Level Enhancement Mode Field Effect Transistor. Features. TA=25 o C unless otherwise noted
September BSS38 BSS38 N-Channel Logic Level Enhancement Mode Field Effect Transistor General Description These N-Channel enhancement mode field effect transistors are produced using Fairchild s proprietary,
More informationFDD V P-Channel PowerTrench MOSFET 40V, 32A, 27mΩ Features
FDD4685 V P-Channel PowerTrench MOSFET V, 3A, 7mΩ Features Max r DS(on) = 7mΩ at V GS = V, I D = 8.4A Max r DS(on) = 35mΩ at V GS = 4.5V, I D = 7A High performance trench technology for extremely low r
More informationFeatures. TA=25 o C unless otherwise noted
FDS667A Single N-Channel, Logic Level, PowerTrench MOSFET June 23 FDS667A General Description This N-Channel Logic Level MOSFET is produced using Fairchild Semiconductor s advanced PowerTrench process
More informationFeatures. TO-220F FQPF Series
250V P-Channel MOSFET April 2000 QFET TM General Description These P-Channel enhancement mode power field effect transistors are produced using Fairchild s proprietary, planar stripe, DMOS technology.
More informationFDP V, 80A, 2.7mΩ. N-Channel PowerTrench MOSFET. FDP8441 N-Channel PowerTrench MOSFET. Applications. Features.
M E N FDP844 N-Channel PowerTrench MOSFET 4V, 8A, 2.7mΩ Features Typ r DS(on) = 2.mΩ at V GS = V, I D = 8A Typ Q g() = 25nC at V GS = V Low Miller Charge Low Q rr Body Diode UIS Capability (Single Pulse
More informationFeatures. TO-220F FQPF Series
FQPF6N60 FQPF6N60 600V N-Channel MOSFET April 2000 QFET TM General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild s proprietary, planar stripe,
More informationFeatures I-PAK (TO-251AA) TA=25 o C unless otherwise noted
FDD73BL/FDU73BL 3V N-Channel PowerTrench MOSFET General Description This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or
More informationFeatures. 175 C maximum junction temperature rating. T A =25 o C unless otherwise noted
FDB62P 2V P-Channel.8V Specified PowerTrench MOSFET January 24 FDB62P General Description This P-Channel power MOSFET uses Fairchild s low voltage PowerTrench process. It has been optimized for power management
More informationFeatures. Symbol Parameter Q2 Q1 Units
Dual N-Channel, Notebook Power Supply MOSFET General Description Features This part is designed to replace two single SO-8 MOSFETs in synchronous DC:DC power supplies that provide the various peripheral
More informationFDD8778/FDU8778 N-Channel PowerTrench MOSFET 25V, 35A, 14mΩ Features
E N FDD8778/FDU8778 N-Channel PowerTrench MOSFET 25V, 35A, 4mΩ Features Max r DS(on) = 4.mΩ at V GS = V, I D = 35A Max r DS(on) = 2.mΩ at V GS = 4.5V, I D = 33A Low gate charge: Q g(tot) = 2.6nC(Typ),
More informationFeatures G D. TO-220 FQP Series
FQP7N60 FQP7N60 600V N-Channel MOSFET April 2000 QFET TM General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild s proprietary, planar stripe, DMOS
More informationFeatures. TO-3P FQA Series
FQA24N60 FQA24N60 600V N-Channel MOSFET April 2000 QFET TM General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild s proprietary, planar stripe,
More informationFDD8780/FDU8780 N-Channel PowerTrench MOSFET 25V, 35A, 8.5mΩ General Description
E N FDD878/FDU878 N-Channel PowerTrench MOSFET 5V, 35A, 8.5mΩ General Description This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either
More informationFeatures. I-PAK FQU Series
250V P-Channel MOSFET General Description These P-Channel enhancement mode power field effect transistors are produced using Fairchild s proprietary, planar stripe, DMOS technology. This advanced technology
More informationFeatures. I-PAK FQU Series
100V LOGIC N-Channel MOSFET General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild s proprietary, planar stripe, DMOS technology. This advanced
More informationISL9R860P2, ISL9R860S2, ISL9R860S3ST
ISL9RP, ISL9RS, ISL9RS3ST A, V Stealth Diode General Description The ISL9RP, ISL9RS and ISL9RS3S are Stealth diodes optimized for low loss performance in high frequency hard switched applications. The
More informationFDP75N08A 75V N-Channel MOSFET
FDP75N08A 75V N-Channel MOSFET Features 75A, 75V, R DS(on) = 0.011Ω @ = 10 V Low gate charge ( typical 145nC) Low Crss ( typical 86pF) Fast switching Improved dv/dt capability Description July 2006 UniFET
More informationFDP3651U N-Channel PowerTrench MOSFET 100V, 80A, 15mΩ Features
FDP365U N-Channel PowerTrench MOSFET V, 8A, 5mΩ Features r DS(on) =3 mω(typ.), V GS = V, I D = 4A Q g(tot) =49 nc(typ.), V GS = V Low Miller Charge Low Q rr Body Diode UIS Capability (Single Pulse/Repetitive
More informationFDD8782/FDU8782 N-Channel PowerTrench MOSFET 25V, 35A, 11mΩ General Description
E N FDD878/FDU878 N-Channel PowerTrench MOSFET 5V, 35A, mω General Description This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous
More informationFeatures G D. TO-220 FQP Series
100V N-Channel MOSFET April 2000 QFET TM General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild s proprietary, planar stripe, DMOS technology.
More informationFDB8447L 40V N-Channel PowerTrench MOSFET 40V, 50A, 8.5mΩ Features
FDB8447L V N-Channel PowerTrench MOSFET V, 5A, 8.5mΩ Features Max r DS(on) = 8.5mΩ at, I D = 4A Max r DS(on) = mω at V GS = 4.5V, I D = A Fast Switching RoHS Compliant D General Description February 7
More informationData Sheet January Features. Packaging
RHRP4, RHRP6 Data Sheet January 22 A, 4V - 6V Hyperfast Diodes The RHRP4 and RHRP6 are hyperfast diodes with soft recovery characteristics ( < 3ns). They have half the recovery time of ultrafast diodes
More informationFQP10N60C / FQPF10N60C 600V N-Channel MOSFET
FQP10N60C / FQPF10N60C 600V N-Channel MOSFET Features 9.5A, 600V, R DS(on) = 0.73Ω @ = 10 V Low gate charge ( typical 44 nc) Low Crss ( typical 18 pf) Fast switching 100% avalanche tested Improved dv/dt
More informationFDN359BN N-Channel Logic Level PowerTrench TM MOSFET
N-Channel Logic Level PowerTrench TM MOSFET January 26 General Description This N-Channel Logic Level MOSFET is produced using Fairchild s Semiconductor s advanced PowerTrench process that has been especially
More informationMUR840, MUR860, RURP840, RURP860
MUR4, MUR6, RURP4, RURP6 Data Sheet January 22 A, 4V - 6V Ultrafast Diodes The MUR4, MUR6, RURP4 and RURP6 are low forward voltage drop ultrafast recovery rectifiers ( < 6ns). They use a glass-passivated
More informationFDP V, 80A, 3.1mΩ. N-Channel PowerTrench MOSFET. FDP8442 N-Channel PowerTrench MOSFET. Features. Applications. June 2007
M E N FDP8442 N-Channel PowerTrench MOSFET 4V, 8A, 3.mΩ Features Applications June 27 Typ r DS(on) = 2.3mΩ at V GS = V, I D = 8A Automotive Engine Control Typ Q g() = 8nC at V GS = V Powertrain Management
More informationFDMS8690 N-Channel PowerTrench MOSFET
FDMS869 N-Channel PowerTrench MOSFET 3V, 9.8A, 9mΩ General Description This device has been designed specifically to improve the efficiency of DC-DC converters. Using new techniques in MOSFET construction,
More informationFeatures. 13 A, 30 V. R DS(ON) = 11.3 V GS = 10 V R DS(ON) = 14.4 V GS = 4.5 V. RoHS Compliant. Symbol Parameter Ratings Units
3V N-Channel Fast Switching PowerTrench MOSFET February 27 tm General Description This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either
More informationRURD4120, RURD4120S. Features. 4A, 1200V Ultrafast Diodes. Applications. Ordering Information. Packaging. Symbol. Data Sheet January 2002
RURD2, RURD2S Data Sheet January 22 A, 2V Ultrafast Diodes The RURD2 and RURD2S are ultrafast diodes with soft recovery characteristics ( < 7ns). They have low forward voltage drop and are silicon nitride
More informationFQPF12N60CT 600V N-Channel MOSFET
FQPF12N60CT 600V N-Channel MOSFET Features 12A, 600V, R DS(on) = 0.65Ω @ = 10 V Low gate charge ( typical 48 nc) Low Crss ( typical 21 pf) Fast switching 100% avalanche tested Improved dv/dt capability
More informationFeatures. SC70-6 The pinouts are symmetrical; pin 1 and pin 4 are interchangeable. TA=25 o C unless otherwise noted. Symbol Parameter Ratings Units
P-Channel.5V Specified PowerTrench MOSFET February General Description This P-Channel.5V specified MOSFET is a rugged gate version of Fairchild Semiconductor s advanced PowerTrench process. It has been
More informationFDB V N-Channel PowerTrench MOSFET
FDB264 200V N-Channel PowerTrench MOSFET General Description This N-Channel MOSFET is produced using Fairchild Semiconductor s advanced PowerTrench process that has been especially tailored to minimize
More informationISL9R3060G2, ISL9R3060P2
ISL9R36G2, ISL9R36P2 3A, 6V Stealth Diode General Description The ISL9R36G2 and ISL9R36P2 are Stealth diodes optimized for low loss performance in high frequency hard switched applications. The Stealth
More informationFDP79N15 / FDPF79N15 150V N-Channel MOSFET
FDP79N15 / FDPF79N15 150V N-Channel MOSFET Features 79A, 150V, R DS(on) = 0.03Ω @V GS = 10 V Low gate charge ( typical 56 nc) Low Crss ( typical 96pF) Fast switching Improved dv/dt capability Description
More informationRURG Features. 80A, 1000V Ultrafast Diode. Applications. Ordering Information. Packaging. Symbol. Data Sheet January 2002
RURG81 Data Sheet January 22 8A, 1V Ultrafast Diode The RURG81 is an ultrafast diode with soft recovery characteristics (t rr < 125ns). It has low forward voltage drop and is of silicon nitride passivated
More informationFeatures R DS(ON) = V GS = 4.5 V. TA=25 o C unless otherwise noted
FDN68P 6V P-Channel Logic Level PowerTrench MOSFET October FDN68P General Description This 6V P-Channel MOSFET uses Fairchild s high voltage PowerTrench process. It has been optimized for power management
More informationFeatures. = 25 C unless otherwise noted
Dual N & P-Channel PowerTrench MOSFET October 4 General Description These dual N- and P-Channel enhancement mode power field effect transistors are produced using Fairchild Semiconductor s advanced PowerTrench
More informationData Sheet January Features. Packaging. 30 A (T C = 145 o C) Repetitive Peak Surge Current... I FRM
RURP32 Data Sheet January 22 3A, 2V Ultrafast Diode The RURP32 is an ultrafast diode (t rr < 45ns) with soft recovery characteristics. It has a low forward voltage drop and is of planar, silicon nitride
More informationFeatures. TA=25 o C unless otherwise noted. Symbol Parameter Ratings Units. Pulsed 10 Power Dissipation for Single Operation (Note 1a) 2
V N-Channel PowerTrench MOSFET General Description These N Channel Logic Level MOSFET have been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional
More informationCharacteristic Value Units Drain-to-Source Voltage. 28 Continuous Drain Current (T C =100 C)
$GYDQFHG 3RZHU 026)(7 IRL540A FEATURES Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area Lower Leakage Current: 10µA (Max.)
More informationFQA11N90 900V N-Channel MOSFET
FQA11N90 900V N-Channel MOSFET Features 11.4A, 900V, R DS(on) = 0.96Ω @ = 10 V Low gate charge ( typical 72 nc) Low Crss ( typical 30pF) Fast switching 100% avalanche tested Improved dv/dt capability Description
More informationFeatures S 1. TA=25 o C unless otherwise noted
P-Channel.5V PowerTrench Specified MOSFET January General Description This P-Channel.5V specified MOSFET uses a rugged gate version of Fairchild s advanced PowerTrench process. It has been optimized for
More informationFeatures. Symbol Description SGH15N60RUFD Units V CES Collector-Emitter Voltage 600 V V GES Gate-Emitter Voltage ± 20 V Collector T
SGH5N6RUFD Short Circuit Rated IGBT General Description Fairchild's RUFD series of Insulated Gate Bipolar Transistors (IGBTs) provide low conduction and switching losses as well as short circuit ruggedness.
More informationUniFET TM. FDP18N50 / FDPF18N50 500V N-Channel MOSFET. FDP18N50 / FDPF18N50 500V N-Channel MOSFET. Description. Features. Absolute Maximum Ratings
FDP18N50 / FDPF18N50 500V N-Channel MOSFET Features 18A, 500V, R DS(on) = 0.265Ω @V GS = 10 V Low gate charge ( typical 45 nc) Low C rss ( typical 25 pf) Fast switching 100% avalanche tested Improved dv/dt
More informationSOT-23 Mark: 62V / 62W / 62X. TA = 25 C unless otherwise noted. Symbol Parameter Value Units
G S D J210 J211 J212 TO-92 This device is designed for HF/VHF mixer/amplifier and applications where Process 50 is not adequate. Sufficient gain and low noise for sensitive receivers. Sourced from Process
More information= 25 o C unless other wise noted Symbol Parameter NDS9945 Units V DSS. Drain-Source Voltage 60 V V GSS. Gate-Source Voltage ±20 V I D
May 998 N9945 Dual N-Channel Enhancement Mode Field Effect Transistor General Description SO-8 N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high
More informationFDP V N-Channel PowerTrench MOSFET
FDP27 250V N-Channel PowerTrench MOSFET General Description This N-Channel MOSFET is produced using Fairchild Semiconductor s advanced PowerTrench process that has been especially tailored to minimize
More information