MUR840, MUR860, RURP840, RURP860

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1 MUR4, MUR6, RURP4, RURP6 Data Sheet January 22 A, 4V - 6V Ultrafast Diodes The MUR4, MUR6, RURP4 and RURP6 are low forward voltage drop ultrafast recovery rectifiers ( < 6ns). They use a glass-passivated ion-implanted, epitaxial construction. These devices are intended for use as output rectifiers and flywheel diodes in a variety of high-frequency pulse-width modulated switching regulators. Their low stored charge and attendant fast reverse-recovery behavior minimize electrical noise generation and in many circuits markedly reduce the turn-on dissipation of the associated power switching transistors. Formerly developmental type TA9616. Ordering Information PART NUMBER PACKAGE BRAND MUR4 TO-22AC MUR4 RURP4 TO-22AC RURP4 MUR6 TO-22AC MUR6 Features Ultrafast with Soft Recovery <6ns Operating Temperature Reverse Voltage V Avalanche Energy Rated Planar Construction Applications Switching Power Supplies Power Switching Circuits General Purpose Packaging CATHODE (FLANGE) JEDEC TO-22AC ANODE CATHODE RURP6 TO-22AC RURP6 NOTE: When ordering, use the entire part number. Symbol K A Absolute Maximum Ratings T C = 25, Unless Otherwise Specified MUR4 RURP4 MUR6 RURP6 Peak Repetitive Reverse Voltage V RRM 4 6 V Working Peak Reverse Voltage V RWM 4 6 V DC Blocking Voltage V R 4 6 V Average Rectified Forward Current I F(AV) A (T C = 155 ) Repetitive Peak Surge Current I FRM A (Square Wave, 2kHz) Nonrepetitive Peak Surge Current I FSM 1 1 A (Halfwave, 1 Phase, 6Hz) Maximum Power Dissipation P D W Avalanche Energy (See Figures 1 and 11) E AVL 2 2 mj Operating and Storage Temperature T STG, T J -65 to to 175 Maximum Lead Temperature for Soldering Leads at.63 in. (1.6mm) from case for 1s T L 3 3 Package Body for 1s, see Tech Brief T PKG UNITS 22 Fairchild Semiconductor Corporation MUR4, MUR6, RURP4, RURP6 Rev. B

2 MUR4, MUR6, RURP4, RURP6 Electrical Specifications T C = 25, Unless Otherwise Specified MUR4, RURP4 MUR6, RURP6 SYMBOL TEST CONDITION MIN TYP MAX MIN TYP MAX UNITS V F I F = A V I F = A, T C = V I R V R = 4V µa V R = 6V µa V R = 4V, T C = µa V R = 6V, T C = µa I F = 1A, di F /dt = 2A/µs ns I F = A, di F /dt = 2A/µs ns I F = A, di F /dt = 2A/µs ns I F = A, di F /dt = 2A/µs ns Q RR I F = A, di F /dt = 2A/µs nc C J V R = 1V, I F = A pf R θjc /W DEFINITIONS V F = Instantaneous forward voltage (pw = 3µs, D = 2%). I R = Instantaneous reverse current. = Reverse recovery time (See Figure 9), summation of +. = Time to reach peak reverse current (See Figure 9). = Time from peak I RM to projected zero crossing of I RM based on a straight line from peak I RM through 25% of I RM (See Figure 9). Q RR = Reverse recovery charge. C J = Junction Capacitance. R θjc = Thermal resistance junction to case. pw = pulse width. D = duty cycle. Typical Performance Curves V F, FORWARD VOLTAGE (V) I R, REVERSE CURRENT (µa) V R, REVERSE VOLTAGE (V) FIGURE 1. FORWARD CURRENT vs FORWARD VOLTAGE FIGURE 2. REVERSE CURRENT vs REVERSE VOLTAGE 22 Fairchild Semiconductor Corporation MUR4, MUR6, RURP4, RURP6 Rev. B

3 MUR4, MUR6, RURP4, RURP6 Typical Performance Curves (Continued) 6 T C = 25, di F /dt = 2A/µs 1 T C = 1, di F /dt = 2A/µs FIGURE 3., AND CURVES vs FORWARD CURRENT FIGURE 4., AND CURVES vs FORWARD CURRENT T C = 175, di F /dt = 2A/µs 1 4 I F(AV), AVERAGE FORWARD CURRENT (A) DC 6 SQ. WAVE T C, CASE TEMPERATURE ( ) FIGURE 5., AND CURVES vs FORWARD CURRENT FIGURE 6. CURRENT DERATING CURVE 1 C J, JUNCTION CAPACITANCE (pf) V R, REVERSE VOLTAGE (V) FIGURE 7. JUNCTION CAPACITANCE vs REVERSE VOLTAGE 22 Fairchild Semiconductor Corporation MUR4, MUR6, RURP4, RURP6 Rev. B

4 Test Circuits and Waveforms MUR4, MUR6, RURP4, RURP6 V GE AMPLITUDE AND R G CONTROL di F /dt t 1 AND t 2 CONTROL I F L V GE t 1 R G DUT IGBT CURRENT SENSE + - I F di F dt t 2.25 I RM I RM FIGURE. TEST CIRCUIT FIGURE 9. WAVEFORMS AND DEFINITIONS I = 1A L = 4mH R <.1Ω E AVL = 1/2LI 2 [V R(AVL) /(V R(AVL) - )] Q 1 = IGBT (BV CES > DUT V R(AVL) ) L R V AVL Q 1 CURRENT SENSE + I V I L I L DUT - t t 1 t 2 t FIGURE 1. AVALANCHE ENERGY TEST CIRCUIT FIGURE 11. AVALANCHE CURRENT AND VOLTAGE WAVEFORMS 22 Fairchild Semiconductor Corporation MUR4, MUR6, RURP4, RURP6 Rev. B

5 TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACEx Bottomless CoolFET CROSSVOLT DenseTrench DOME EcoSPARK E 2 CMOS TM EnSigna TM FACT FACT Quiet Series STAR*POWER is used under license DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. LIFE SUPPORT POLICY FAIRCHILD S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in significant injury to the user. PRODUCT STATUS DEFINITIONS Definition of Terms FAST FASTr FRFET GlobalOptoisolator GTO HiSeC ISOPLANAR LittleFET MicroFET MicroPak MICROWIRE OPTOLOGIC OPTOPLANAR PACMAN POP Power247 PowerTrench QFET QS QT Optoelectronics Quiet Series SILENT SWITCHER SMART START STAR*POWER Stealth SuperSOT -3 SuperSOT -6 SuperSOT - SyncFET TinyLogic TruTranslation UHC UltraFET 2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. Datasheet Identification Product Status Definition VCX Advance Information Preliminary No Identification Needed Formative or In Design First Production Full Production This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data, and supplementary data will be published a later date. Fairchild Semiconductor reserves the right to make changes any time without notice in order to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. Obsolete Not In Production This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. Rev. H4

Data Sheet January Features. Packaging

Data Sheet January Features. Packaging RHRP4, RHRP6 Data Sheet January 22 A, 4V - 6V Hyperfast Diodes The RHRP4 and RHRP6 are hyperfast diodes with soft recovery characteristics ( < 3ns). They have half the recovery time of ultrafast diodes