Features. Symbol Description SGH15N60RUFD Units V CES Collector-Emitter Voltage 600 V V GES Gate-Emitter Voltage ± 20 V Collector T

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1 SGH5N6RUFD Short Circuit Rated IGBT General Description Fairchild's RUFD series of Insulated Gate Bipolar Transistors (IGBTs) provide low conduction and switching losses as well as short circuit ruggedness. The RUFD series is designed for applications such as motor control, uninterrupted power supplies (UPS) and general inverters where short circuit ruggedness is a required feature. Features IGBT Short circuit rated = C, = 5V High speed switching Low saturation voltage : V CE(sat) = 2.2 High input impedance CO-PAK, IGBT with FRD : t rr = 42ns (typ.) SGH5N6RUFD Applications AC & DC motor controls, general purpose inverters, robotics, and servo controls. C G G C E TO-3P E Absolute Maximum Ratings = 25 C unless otherwise noted Symbol Description SGH5N6RUFD Units V CES Collector-Emitter Voltage 6 V S Gate-Emitter Voltage ± 2 V Collector T = 25 C 24 A C Collector = C 5 A M () Pulsed Collector Current 45 A I F Diode Continuous Forward = C 5 A I FM Diode Maximum Forward Current 6 A T SC Short Circuit Withstand = C us P D Maximum Power = 25 C 6 W Maximum Power = C 64 W T J Operating Junction Temperature -55 to +5 C T stg Storage Temperature Range -55 to +5 C T L Maximum Lead Temp. for Soldering Purposes, /8 from Case for 5 Seconds 3 C Notes : () Repetitive rating : Pulse width limited by max. junction temperature Thermal Characteristics Symbol Parameter Typ. Max. Units R θjc (IGBT) Thermal Resistance, Junction-to-Case C/W R θjc (DIODE) Thermal Resistance, Junction-to-Case --.7 C/W R θja Thermal Resistance, Junction-to-Ambient -- 4 C/W 22 Fairchild Semiconductor Corporation SGH5N6RUFD Rev. A

2 Electrical Characteristics of the IGBT = 25 C unless otherwise noted Symbol Parameter Test Conditions Min. Typ. Max. Units Off Characteristics BV CES Collector-Emitter Breakdown Voltage = V, = 25uA V B VCES / Temperature Coefficient of Breakdown T J Voltage = V, = ma V/ C ES Collector Cut-Off Current V CE = V CES, = V ua I GES G-E Leakage Current = S, V CE = V ± na SGH5N6RUFD On Characteristics (th) G-E Threshold Voltage = 5mA, V CE = V Collector to Emitter I V C, = 5V V CE(sat) Saturation Voltage = 24A, = 5V V Dynamic Characteristics C ies Input Capacitance pf V CE = 3V, = V, C oes Output Capacitance pf f = MHz C res Reverse Transfer Capacitance pf Switching Characteristics t d(on) Turn-On Delay Time ns t r Rise Time ns t d(off) Turn-Off Delay Time = 3 V,, ns t f Fall Time R G = 3Ω, = 5V, ns E on Turn-On Switching Loss Inductive Load, = 25 C uj E off Turn-Off Switching Loss uj E ts Total Switching Loss uj t d(on) Turn-On Delay Time ns t r Rise Time ns t d(off) Turn-Off Delay Time = 3 V,, ns t f Fall Time R G = 3Ω, = 5V, ns E on Turn-On Switching Loss Inductive Load, = 25 C uj E off Turn-Off Switching Loss uj E ts Total Switching Loss uj T sc Short Circuit Withstand Time = 3 V, = = C us Q g Total Gate Charge nc V CE = 3 V,, Q ge Gate-Emitter Charge -- 7 nc = 5V Q gc Gate-Collector Charge nc L e Internal Emitter Inductance Measured 5mm from PKG nh Electrical Characteristics of DIODE = 25 C unless otherwise noted Symbol Parameter Test Conditions Min. Typ. Max. Units V FM Diode Forward Voltage I F = 25 C = C V t rr Diode Reverse Recovery Time = 25 C = C ns I rr Q rr Diode Peak Reverse Recovery Current Diode Reverse Recovery Charge I F, di/dt = 2 A/us = 25 C = C = 25 C = C A nc 22 Fairchild Semiconductor Corporation SGH5N6RUFD Rev. A

3 Collector Current, I C [A] V 5V 2V = V Collector Current, I C [A] = 5V SGH5N6RUFD Collector - Emitter Voltage, V CE Collector - Emitter Voltage, V CE Fig. Typical Output Characteristics Fig 2. Typical Saturation Voltage Characteristics Collector - Emitter Voltage, V CE = 5V 3A 5A = 8A Load Current [A] = 3V Load Current : peak of square wave 4 Duty cycle : 5% = Power Dissipation = 25W. Case Temperature, [ ] Frequency [KHz] Fig 3. Saturation Voltage vs. Case Temperature at Variant Current Level Fig 4. Load Current vs. Frequency 2 2 = 25 Collector - Emitter Voltage, V CE = 7A 5A 3A Collector - Emitter Voltage, V CE A 3A = 7A Gate - Emitter Voltage, Gate - Emitter Voltage, Fig 5. Saturation Voltage vs. Fig 6. Saturation Voltage vs. 22 Fairchild Semiconductor Corporation SGH5N6RUFD Rev. A

4 Capacitance [pf] Cies Coes = V, f = MHz Switching Time [ns] = 3V, = ± 5V Ton Tr SGH5N6RUFD 3 Cres Collector - Emitter Voltage, V CE Gate Resistance, R G [Ω] Fig 7. Capacitance Characteristics Fig 8. Turn-On Characteristics vs. Gate Resistance Switching Time [ns] = 3V, = ± 5V Toff Toff Tf Switching Loss [uj] = 3V, = ± 5V Eoff Eon Eoff Gate Resistance, R G [Ω] Tf Gate Resistance, R G [Ω] Fig 9. Turn-Off Characteristics vs. Gate Resistance Fig. Switching Loss vs. Gate Resistance Switching Time [ns] = ± 5V, R G = 3Ω Ton Tr Switching Time [ns] = ± 5V, R G = 3Ω Toff Tf Toff Tf Collector Current, [A] Collector Current, [A] Fig. Turn-On Characteristics vs. Collector Current 22 Fairchild Semiconductor Corporation Fig 2. Turn-Off Characteristics vs. Collector Current SGH5N6RUFD Rev. A

5 Switching Loss [uj] = ± 5V, R G = 3Ω Eon Eoff Eoff Gate - Emitter Voltage, V GE [ V ] R L = 2Ω = V 3 V 2 V SGH5N6RUFD Collector Current, [A] Gate Charge, Q g [ nc ] Fig 3. Switching Loss vs. Collector Current Fig 4. Gate Charge Characteristics MAX. (Pulsed) 5us Collector Current, I C [A] MAX. (Continuous) Single Nonrepetitive Pulse Curves must be derated linearly with increase in temperature DC Operation us ms.. Collector Current, I C [A] Safe Operating Area = 2V, = Collector-Emitter Voltage, V CE Collector-Emitter Voltage, V CE Fig 5. SOA Characteristics Fig 6. Turn-Off SOA Characteristics Thermal Response, Zthjc [ /W].. E single pulse Rectangular Pulse Duration [sec] Pdm t t2 Duty factor D = t / t2 Peak Tj = Pdm Zthjc + Fig 7. Transient Thermal Impedance of IGBT 22 Fairchild Semiconductor Corporation SGH5N6RUFD Rev. A

6 Forward Current, I F [A] = Reverse Recovery Current, I rr [A] V R = 2V I F = SGH5N6RUFD 2 3 Forward Voltage Drop, V FM di/dt [A/us] Fig 8. Forward Characteristics Fig 9. Reverse Recovery Current Stored Recovery Charge, Q rr [nc] V R = 2V I F = Reverce Recovery Time, t rr [ns] V R = 2V I F = di/dt [A/us] 2 di/dt [A/us] Fig 2. Stored Charge Fig 2. Reverse Recovery Time 22 Fairchild Semiconductor Corporation SGH5N6RUFD Rev. A

7 Package Dimension ø3.2 ±. 5.6 ± ± ±.2 TO-3P 3.8 ± ± SGH5N6RUFD 3.9 ± ± ± ± ±.2 2. ±.2 3. ±.2. ± ± ±.3.4 ± TYP [5.45 ±.3] 5.45TYP [5.45 ±.3] Dimensions in Millimeters 22 Fairchild Semiconductor Corporation SGH5N6RUFD Rev. A

8 TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACEx Bottomless CoolFET CROSSVOLT DenseTrench DOME EcoSPARK E 2 CMOS EnSigna FACT FACT Quiet Series STAR*POWER is used under license FAST FASTr FRFET GlobalOptoisolator GTO HiSeC I 2 C ISOPLANAR LittleFET MicroFET MicroPak MICROWIRE OPTOLOGIC OPTOPLANAR PACMAN POP Power247 PowerTrench QFET QS QT Optoelectronics Quiet Series SLIENT SWITCHER SMART START SPM STAR*POWER Stealth SuperSOT -3 SuperSOT -6 SuperSOT -8 SyncFET TinyLogic TruTranslation UHC UltraFET VCX DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. LIFE SUPPORT POLICY FAIRCHILD S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein:. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in significant injury to the user. 2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Definition Advance Information Formative or In Design This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. Preliminary First Production This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. No Identification Needed Full Production This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. Obsolete Not In Production This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. 22 Fairchild Semiconductor Corporation Rev. H5

Features. Symbol Description SGH23N60UFD Units V CES Collector-Emitter Voltage 600 V V GES Gate-Emitter Voltage ± 20 V Collector T

Features. Symbol Description SGH23N60UFD Units V CES Collector-Emitter Voltage 600 V V GES Gate-Emitter Voltage ± 20 V Collector T SGH23N6UFD Ultra-Fast IGBT September 2 IGBT SGH23N6UFD General Description Fairchild's Insulated Gate Bipolar Transistor(IGBT) UFD series provides low conduction and switching losses. UFD series is designed