FJL6820. Symbol Parameter Typ Max Units R θjc Thermal Resistance, Junction to Case C/W

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1 High Voltage Color Display Horizontal Deflection Output High Collector-Base Breakdown Voltage : BV CBO = 5V Low Saturation Voltage : (sat) = 3V (Max.) For Color Monitor NPN Triple Diffused Planar Silicon Transistor Absolute Maximum Ratings T C =25 C unless otherwise noted Symbol Parameter Rating Units V CBO Collector-Base Voltage 5 V O Collector-Emitter Voltage 75 V V EBO Emitter-Base Voltage V Collector Current (DC) 2 A P * Collector Current (Pulse) 3 A P C Collector Dissipation 2 W T J Junction Temperature 5 C T STG Storage Temperature -55 ~ 5 C * Pulse Test: PW=3µs, duty Cycle=2% Pulsed Electrical Characteristics T C =25 C unless otherwise noted Symbol Parameter Test Conditions Min. Typ. Max. Units ES Collector Cut-off Current V CB =4V, R BE = ma BO Collector Cut-off Current V CB =V, I E = µa I EBO Emitter Cut-off Current V EB =4V, = ma BV CBO Collector-Base Breakdown Voltage =5µA, I E = 5 V BO Collector-Emitter Breakdown Voltage =5mA, I B = 75 V BV EBO Emitter-Base Breakdown Voltage I E =5µA, = V h FE h FE2 h FE3 DC Current Gain =5V, =A =5V, =.5A =5V, =A (sat) Collector-Emitter Saturation Voltage =A, I B =2.75A 3 V V BE (sat) Base-Emitter Saturation Voltage =A, I B =2.75A.5 V * Storage Time V CC =2V, =A, R L =2Ω 3 µs * Fall Time I B =2.A, I B2 = - 4.A.5.2 µs * Pulse Test: PW=2µs, duty Cycle=% Pulsed Thermal Characteristics T C =25 C unless otherwise noted TO-24.Base 2.Collector 3.Emitter Symbol Parameter Typ Max Units R θjc Thermal Resistance, Junction to Case.25 C/W 2 Fairchild Semiconductor Corporation Rev. A, May 2

2 Typical Characteristics I B =2.A I B =.A I B =.A I B =.4A I B =.2A I B =.A I B =.A I B =.A I B =.4A I B =.2A h FE, DC CURRENT GAIN Ta = 25 C Ta = 25 C = 5V Figure. Static Characteristics Figure 2. DC Current Gain = 3 I B = 5 I B (sat) [V], SATURATION VOLTAGE. Ta = 25 C Ta = 25 C (sat) [V], SATURATION VOLTAGE. Ta = 25 C Ta = 25 C.... Figure 3. Collector-Emitter Saturation Voltage Figure 4. Collector-Emitter Saturation Voltage = 5V 25 C 25 C - 25 C &... I B = 2A, V CC = 2V = A V BE [V], BASE-EMITTER VOLTAGE I B2 [A], REVERSE BASE CURRENT Figure 5. Base-Emitter On Voltage Figure. Resistive Load Switching Time 2 Fairchild Semiconductor Corporation Rev. A, May 2

3 Typical Characteristics (Continued) I B2 = - 4A, V CC = 2V = A I B = 2A, I B2 = - 4A V CC = 2V &. & T STG. I B [A], FORWARD BASE CURRENT Figure 7. Resistive Load Switching Time Figure. Resistive Load Switching Time 4 (Pulse) t = ms t = ms t = ms 35 R B2 =, I B = 5A V CC = 3V, L = 2µH IC. (DC) T C = 25 o C Single Pulse V BE (off) = - V 5 V BE (off) = - 3V Figure 9. Forward Bias Safe Operating Area Figure. Reverse Bias Safe Operating Area 3 P C [W], POWER DISSIPATION T C [ O C], CASE TEMPERATURE Figure. Power Derating 2 Fairchild Semiconductor Corporation Rev. A, May 2

4 Package Demensions TO ±.2 (.3) (.3) (.) (4.). ±.2 (2.) (9.).5 ±.2 (.) (R2.) (R.) (7.) ø3.3 ±.2 (7.) (.5) 2. ± ±.2 (.5) (.5) 2.5 ±.2 3. ± ±.5 (.5) 5.45TYP [5.45 ±.3] 5.45TYP [5.45 ±.3] ±.3 5. ± ±.2 (.5) (.5) (2.) 2.5 ±. (9.) (2.) Dimensions in Millimeters 2 Fairchild Semiconductor Corporation Rev. A, May 2

5 TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACEx Bottomless CoolFET CROSSVOLT DenseTrench DOME EcoSPARK E 2 CMOS EnSigna FACT FACT Quiet Series DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. LIFE SUPPORT POLICY FAST FASTr FRFET GlobalOptoisolator GTO HiSeC ISOPLANAR LittleFET MicroFET MICROWIRE OPTOLOGIC FAIRCHILD S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein:. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in significant injury to the user. OPTOPLANAR PACMAN POP PowerTrench QFET QS QT Optoelectronics Quiet Series SLIENT SWITCHER SMART START Stealth SuperSOT -3 SuperSOT - SuperSOT - SyncFET TinyLogic UHC UltraFET VCX 2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Definition Advance Information Formative or In Design This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. Preliminary First Production This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. No Identification Needed Full Production This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. Obsolete Not In Production This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. 2 Fairchild Semiconductor Corporation Rev. H2

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