ANODE 2 CATHODE ANODE 1
|
|
- Kelley Parsons
- 5 years ago
- Views:
Transcription
1 ISL9KP3 A, V Stealth Dual Diode General Description The ISL9KP3 is a Stealth dual diode optimized for low loss performance in high frequency hard switched applications. The Stealth family exhibits low reverse recovery current (I RRM ) and exceptionally soft recovery under typical operating conditions. This device is intended for use as a free wheeling or boost diode in power supplies and other power switching applications. The low I RRM and short t a phase reduce loss in switching transistors. The soft recovery minimizes ringing, expanding the range of conditions under which the diode may be operated without the use of additional snubber circuitry. Consider using the Stealth diode with an SMPS IGBT to provide the most efficient and highest power density design at lower cost. Formerly developmental type TA99. Package April Features Soft Recovery t b / t a >.5 Fast Recovery t rr < 5ns Operating Temperature o C Reverse Voltage V Avalanche Energy Rated Applications Switch Mode Power Supplies Hard Switched PFC Boost Diode UPS Free Wheeling Diode Motor Drive FWD SMPS FWD Snubber Diode Symbol ISL9KP3 CATHODE (FLANGE) JEDEC TO-AB ANODE CATHODE ANODE 1 K A 1 A Device Maximum Ratings (per leg) T C = 5 C unless otherwise noted Symbol Parameter Ratings Units V RRM Peak Repetitive Reverse Voltage V V RWM Working Peak Reverse Voltage V V R DC Blocking Voltage V I F(AV) Average Rectified Forward Current (T C = 17 o C) Total Device Current (Both Legs) I FRM Repetitive Peak Surge Current (khz Square Wave) 1 A I FSM Nonrepetitive Peak Surge Current (Halfwave 1 Phase Hz) 1 A P D Power Dissipation 5 W E AVL Avalanche Energy (1A, mh) mj T J, T STG Operating and Storage Temperature Range -55 to 175 C T L T PKG Maximum Temperature for Soldering Leads at.3in (1.mm) from Case for 1s Package Body for 1s, See Techbrief TB33 CAUTION: Stresses above those listed in Absolute Maximum Ratings may cause permanent damage to the device. This is a stress only rating and operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied. 1 3 A A C C Fairchild Semiconductor Corporation ISL9KP3 Rev. C
2 Package Marking and Ordering Information Device Marking Device Package Tape Width Quantity KP3 ISL9KP3 TO-AB - - Electrical Characteristics (per leg) T C = 5 C unless otherwise noted Symbol Parameter Test Conditions Min Typ Max Units Off State Characteristics I R Instantaneous Reverse Current V R = V T C = 5 C µa T C = 15 C ma ISL9KP3 On State Characteristics V F Instantaneous Forward Voltage I F = A T C = 5 C -.. V T C = 15 C V Dynamic Characteristics C J Junction Capacitance V R = 1V, I F = A pf Switching Characteristics t rr Reverse Recovery Time I F = 1A, di F /dt = 1A/µs, V R = 3V ns I F = A, di F /dt = 1A/µs, V R = 3V ns t rr Reverse Recovery Time I F = A, - - ns I RRM Maximum Reverse Recovery Current di F /dt = A/µs, A Q RR Reverse Recovery Charge V R = 39V, T C = 5 C nc t rr Reverse Recovery Time I F = A, ns S Softness Factor (t b /t a ) di F /dt = A/µs, V R = 39V, I RRM Maximum Reverse Recovery Current A T C = 15 C Q RR Reverse Recovery Charge nc t rr Reverse Recovery Time I F = A, ns S Softness Factor (t b /t a ) di F /dt = A/µs, V R = 39V, I RRM Maximum Reverse Recovery Current A T C = 15 C Q RR Reverse Recovery Charge nc di M /dt Maximum di/dt during t b A/µs Thermal Characteristics R θjc Thermal Resistance Junction to Case C/W R θja Thermal Resistance Junction to Ambient TO- - - C/W Fairchild Semiconductor Corporation ISL9KP3 Rev. C
3 Typical Performance Curves I F, FORWARD CURRENT (A) o C 1 15 o C 1 15 o C 1 o C 5 o C I R, REVERSE CURRENT (µa) o C 15 o C 15 o C 1 o C 5 o C ISL9KP V F, FORWARD VOLTAGE (V) Figure 1. Forward Current vs Forward Voltage V R, REVERSE VOLTAGE (V) Figure. Reverse Current vs Reverse Voltage t, RECOVERY TIMES (ns) V R = 39V, T J = 15 C t b AT di F /dt = A/µs, 5A/µs, A/µs t, RECOVERY TIMES (ns) V R = 39V, T J = 15 C t b AT I F = 1A, A, A 1 t a AT di F /dt = A/µs, 5A/µs, A/µs I F, FORWARD CURRENT (A) Figure 3. t a and t b Curves vs Forward Current 1 1 t a AT I F = 1A, A, A Figure. t a and t b Curves vs di F /dt I RRM, MAX REVERSE RECOVERY CURRENT (A) V R = 39V, T J = 15 C di F /dt = A/µs di F /dt = 5A/µs di F /dt = A/µs I F, FORWARD CURRENT (A) 1 I RRM, MAX REVERSE RECOVERY CURRENT (A) V R = 39V, T J = 15 C I F = A I F = 1A I F = A Figure 5. Maximum Reverse Recovery Current vs Forward Current Figure. Maximum Reverse Recovery Current vs di F /dt Fairchild Semiconductor Corporation ISL9KP3 Rev. C
4 Typical Performance Curves (Continued) S, REVERSE RECOVERY SOFTNESS FACTOR V R = 39V, T J = 15 C I F = 1A I F = A I F = A Q RR, REVERSE RECOVERY CHARGE (nc) 35 V R = 39V, T J = 15 C 3 I F = 1A 5 I F = A 15 I F = A ISL9KP3 Figure 7. Reverse Recovery Softness Factor vs di F /dt Figure. Reverse Recovery Charge vs di F /dt 1 1 C J, JUNCTION CAPACITANCE (pf) V R, REVERSE VOLTAGE (V) I F(AV), AVERAGE FORWARD CURRENT (A) T C, CASE TEMPERATURE ( o C) Figure 9. Junction Capacitance vs Reverse Voltage Figure 1. DC Current Derating Curve Z θja, NORMALIZED THERMAL IMPEDANCE 1..1 DUTY CYCLE - DESCENDING ORDER SINGLE PULSE P DM t 1 t NOTES: DUTY FACTOR: D = t 1 /t PEAK T J = P DM x Z θja x R θja + T A t, RECTANGULAR PULSE DURATION (s) Figure 11. Normalized Maximum Transient Thermal Impedance Fairchild Semiconductor Corporation ISL9KP3 Rev. C
5 l.l Test Circuits and Waveforms V GE AMPLITUDE AND R G CONTROL di F /dt t 1 AND t CONTROL I F R G L DUT CURRENT SENSE + I F di F dt t a t rr t b ISL9KP3 V GE t 1 MOSFET V DD -.5 I RM I RM t Figure 1. t rr Test Circuit Figure 13. t rr Waveforms and Definitions I = 1A L = mh R <.1Ω V DD = 5V E AVL = 1/LI [V R(AVL) /(V R(AVL) - V DD )] Q 1 = IGBT (BV CES > DUT V R(AVL) ) L R V AVL Q1 CURRENT SENSE + V DD I V I L I L DUT - t t 1 t t Figure 1. Avalanche Energy Test Circuit Figure 15. Avalanche Current and Voltage Waveforms Fairchild Semiconductor Corporation ISL9KP3 Rev. C
6 TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks ACEx Bottomless CoolFET CROSSVOLT DenseTrench DOME EcoSPARK E CMOS TM EnSigna TM FACT FACT Quiet Series STAR*POWER is used under license DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS LIFE SUPPORT POLICY FAIRCHILD S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION As used herein: 1 Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in significant injury to the user PRODUCT STATUS DEFINITIONS Definition of Terms FAST â FASTr FRFET GlobalOptoisolator GTO HiSeC I C ISOPLANAR LittleFET MicroFET MicroPak MICROWIRE OPTOLOGIC â OPTOPLANAR PACMAN POP Power7 PowerTrench QFET QS A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness Datasheet Identification Product Status Definition â QT Optoelectronics Quiet Series SILENT SWITCHER â SMART START SPM STAR*POWER Stealth SuperSOT -3 SuperSOT - SuperSOT - SyncFET TinyLogic TruTranslation UHC UltraFET â VCX Advance Information Preliminary No Identification Needed Formative or In Design First Production Full Production This datasheet contains the design specifications for product development Specifications may change in any manner without notice This datasheet contains preliminary data, and supplementary data will be published at a later date Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design This datasheet contains final specifications Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design Obsolete Not In Production This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor The datasheet is printed for reference information only Rev H5
ISL9R860P2, ISL9R860S2, ISL9R860S3ST
ISL9RP, ISL9RS, ISL9RS3ST A, V Stealth Diode General Description The ISL9RP, ISL9RS and ISL9RS3S are Stealth diodes optimized for low loss performance in high frequency hard switched applications. The
More informationISL9R3060G2, ISL9R3060P2
ISL9R36G2, ISL9R36P2 3A, 6V Stealth Diode General Description The ISL9R36G2 and ISL9R36P2 are Stealth diodes optimized for low loss performance in high frequency hard switched applications. The Stealth
More informationData Sheet January Features. Packaging
RHRP4, RHRP6 Data Sheet January 22 A, 4V - 6V Hyperfast Diodes The RHRP4 and RHRP6 are hyperfast diodes with soft recovery characteristics ( < 3ns). They have half the recovery time of ultrafast diodes
More informationMUR840, MUR860, RURP840, RURP860
MUR4, MUR6, RURP4, RURP6 Data Sheet January 22 A, 4V - 6V Ultrafast Diodes The MUR4, MUR6, RURP4 and RURP6 are low forward voltage drop ultrafast recovery rectifiers ( < 6ns). They use a glass-passivated
More informationRURD4120, RURD4120S. Features. 4A, 1200V Ultrafast Diodes. Applications. Ordering Information. Packaging. Symbol. Data Sheet January 2002
RURD2, RURD2S Data Sheet January 22 A, 2V Ultrafast Diodes The RURD2 and RURD2S are ultrafast diodes with soft recovery characteristics ( < 7ns). They have low forward voltage drop and are silicon nitride
More informationRURG Features. 80A, 1000V Ultrafast Diode. Applications. Ordering Information. Packaging. Symbol. Data Sheet January 2002
RURG81 Data Sheet January 22 8A, 1V Ultrafast Diode The RURG81 is an ultrafast diode with soft recovery characteristics (t rr < 125ns). It has low forward voltage drop and is of silicon nitride passivated
More informationData Sheet January Features. Packaging. 30 A (T C = 145 o C) Repetitive Peak Surge Current... I FRM
RURP32 Data Sheet January 22 3A, 2V Ultrafast Diode The RURP32 is an ultrafast diode (t rr < 45ns) with soft recovery characteristics. It has a low forward voltage drop and is of planar, silicon nitride
More informationRHRP A, 600V Hyperfast Diodes
RHRP3060 30A, 600V Hyperfast Diodes Features Hyperfast with Soft Recovery...
More informationBUZ71. 14A, 50V, Ohm, N-Channel Power MOSFET. Features. Ordering Information. Symbol. Packaging. Data Sheet December 2001
Data Sheet December 21 14A, 5V,.1 Ohm, N-Channel Power MOSFET This is an N-Channel enhancement mode silicon gate power field effect transistor designed for applications such as switching regulators, switching
More informationIRF610. Features. 3.3A, 200V, Ohm, N-Channel Power MOSFET. Ordering Information. Symbol. Packaging. Data Sheet January 2002
IRF6 Data Sheet January 22 3.3A, 2V,.5 Ohm, N-Channel Power MOSFET This N-Channel enhancement mode silicon gate power field effect transistor is an advanced power MOSFET designed, tested, and guaranteed
More informationIRF630, RF1S630SM. 9A, 200V, Ohm, N-Channel Power MOSFETs. Features. Ordering Information. Symbol. Packaging. Data Sheet January 2002
IRF3, RFS3SM Data Sheet January 9A, V,. Ohm, N-Channel Power MOSFETs These are N-Channel enhancement mode silicon gate power field effect transistors. They are advanced power MOSFETs designed, tested,
More informationFFPF60B150DS. 120 A 60Hz Single Half-Sine Wave T J, T STG Operating Junction and Storage Temperature - 65 to +150 C
FFPF6B5DS FFPF6B5DS Features High voltage and high reliability High speed switching Modulation diode / Damper diode Low conduction loss Modulation diode / Damper diode TO-22F Applications (Modulation +
More informationRFD4N06L, RFD4N06LSM. 4A, 60V, Ohm, Logic Level, N-Channel Power MOSFETs. Features. Ordering Information. Symbol. Packaging
RFDNL, RFDNLSM Data Sheet January A, V,. Ohm, Logic Level, N-Channel Power MOSFETs The RFDNL, RFDNLSM are N-Channel enhancement mode silicon gate power field effect transistors specifically designed for
More informationRFP2N20L. 2A, 200V, Ohm, Logic Level, N-Channel Power MOSFET. Features. Ordering Information. Symbol. Packaging. Data Sheet January 2002
RFPNL Data Sheet January A, V,.5 Ohm, Logic Level, N-Channel Power MOSFET The RFPNL N-Channel enhancement mode silicon gate power field effect transistor is specifically designed for use with logic level
More informationFFA60UP30DN Ultrafast Recovery Power Rectifier
FFA60UP30DN Ultrafast Recovery Power Rectifier Features Ultrafast with Soft Recovery : < 55 High Reverse Voltage : V RRM = 300V Avalanche Energy Rated Planar Cotruction Applicatio General purpose Switching
More informationFeatures. (Note 1b) 1.2. (Note 1c) 1.0. (Note 1c) 125
NDS97 V P-Channel PowerTrench MOSFET May NDS97 General Description This P-Channel MOSFET is a rugged gate version of Fairchild Semiconductor s advanced PowerTrench process. It has been optimized for power
More informationFFA30UP20DN Ultrafast Recovery Power Rectifier
FFA3UP2DN Ultrafast Recovery Power Rectifier Features Ultrafast with Soft Recovery : < 45 (@I F = 5A) High Reverse Voltage : V RRM = 2V Avalanche Energy Rated Planar Cotruction Applicatio Output Rectifiers
More informationFeatures. TO-220F IRFS Series
400V N-Channel MOSFET General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild s proprietary, planar, DMOS technology. This advanced technology has
More informationFeatures. TO-3P IRFP Series
500V N-Channel MOSFET November 2001 General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild s proprietary, planar, DMOS technology. This advanced
More informationFeatures. TA=25 o C unless otherwise noted. (Note 1b) 0.9. (Note 1c) 0.7
April V Integrated P-Channel PowerTrench MOSFET and Schottky Diode General Description The combines the exceptional performance of Fairchild's PowerTrench MOSFET technology with a very low forward voltage
More informationFeatures. Reduced r DS(ON) DRAIN GATE
FDH27N5 27A, 5V,.19 Ohm, N-Channel SMPS Power MOSFET Applications Switch Mode Power Supplies(SMPS), such as PFC Boost Two-Switch Forward Converter Single Switch Forward Converter Flyback Converter Buck
More informationFeatures. TO-220F SSS Series
600V N-Channel MOSFET General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild s proprietary, planar, DMOS technology. This advanced technology has
More informationFeatures. TO-3PN IRFP Series
500V N-Channel MOSFET General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild s proprietary, planar stripe, DMOS technology. This advanced technology
More informationFFPF20UP20DP Ultrafast Recovery Power Rectifier
FFPF20UP20DP Ultrafast Recovery Power Rectifier Features Ultrafast with Soft Recovery : < 45 (@I F = A) High Reverse Voltage : V RRM = 200V Enhanced Avalanche Energy Rated Planar Cotruction Applicatio
More informationQFET TM FQL40N50. Features. TO-264 FQL Series
500V N-Channel MOSFET May 2001 QFET TM General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild s proprietary, planar stripe, DMOS technology. This
More informationQFET TM FQA65N20. Features. TO-3P FQA Series
200V N-Channel MOSFET August 2001 QFET TM General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild s proprietary, planar stripe, DMOS technology.
More informationFeatures. Symbol Description SGH15N60RUFD Units V CES Collector-Emitter Voltage 600 V V GES Gate-Emitter Voltage ± 20 V Collector T
SGH5N6RUFD Short Circuit Rated IGBT General Description Fairchild's RUFD series of Insulated Gate Bipolar Transistors (IGBTs) provide low conduction and switching losses as well as short circuit ruggedness.
More informationDistributed by: www.jameco.com -8-8-4242 The content and copyrights of the attached material are the property of its owner. Connection Diagram 448 448SE SOT-2 2 5H MARKING MMBD448 5H MMBD448CA MMBD448CC
More informationFeatures D D. I-PAK FQU Series
1000V N-Channel MOSFET General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild s proprietary, planar stripe, DMOS technology. This advanced technology
More informationFeatures GATE SOURCE. Symbol Parameter Ratings Units V DSS Drain to Source Voltage 400 V V GS Gate to Source Voltage ±30 V Drain Current
A, 4V,.55 Ohm, N-Channel SMPS Power MOSFET Applications Switch Mode Power Supplies (SMPS) Uninterruptable Power Supply High Speed Power Switching Features Low Gate Charge Q g results in Simple Drive Requirement
More informationQFET TM FQT4N20L. Features. SOT-223 FQT Series
200V LOGIC N-Channel MOSFET May 2001 QFET TM General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild s proprietary, planar stripe, DMOS technology.
More informationFDH15N50 / FDP15N50 / FDB15N50
15A, V,.38 Ohm, N-Channel SMPS Power MOSFET Applications Switch Mode Power Supplies(SMPS), such as PFC Boost Two-Switch Forward Converter Single Switch Forward Converter Flyback Converter Buck Converter
More informationQFET TM FQP13N06. Features G D. TO-220 FQP Series
60V N-Channel MOSFET May 2001 QFET TM General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild s proprietary, planar stripe, DMOS technology. This
More informationFQA11N90C FQA11N90C. 900V N-Channel MOSFET. Absolute Maximum Ratings T C = 25 C unless otherwise noted. Thermal Characteristics.
900V N-Channel MOSFET General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild s proprietary, planar stripe, DMOS technology. This advanced technology
More informationFeatures. TA=25 o C unless otherwise noted
3V P-Channel PowerTrench MOSFET October 2 General Description This P-Channel MOSFET is a rugged gate version of Fairchild Semiconductor s advanced PowerTrench process. It has been optimized for power management
More informationIRFS650B IRFS650B. 200V N-Channel MOSFET. Absolute Maximum Ratings T C = 25 C unless otherwise noted. Thermal Characteristics. November 2001.
200V N-Channel MOSFET November 2001 General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild s proprietary, planar, DMOS technology. This advanced
More informationFeatures. Symbol Description FGA25N120AND Units V CES Collector-Emitter Voltage 1200 V V GES Gate-Emitter Voltage ± 20 V Collector T
FGA25N2AND General Description Employing NPT technology, Fairchild s AND series of IGBTs provides low conduction and switching losses. The AND series offers an solution for application such as induction
More informationFeatures. TO-220F SSS Series
600V N-Channel MOSFET General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild s proprietary, planar, DMOS technology. This advanced technology has
More informationRFP12N10L. Features. 12A, 100V, Ohm, Logic Level, N-Channel Power MOSFET. Ordering Information. Symbol. Packaging. Data Sheet April 2005
RFP12N1L Data Sheet April 25 12A, 1V,.2 Ohm, Logic Level, N-Channel Power MOSFET These are N-Channel enhancement mode silicon gate power field effect transistors specifically designed for use with logic
More informationFQP3N80C/FQPF3N80C 800V N-Channel MOSFET General Description These N-Channel enhancement mode power field effect transistors are
800V N-Channel MOSFET General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild s proprietary, planar stripe, DMOS technology. This advanced technology
More informationQFET FQA36P15. Features
150V P-Channel MOSFET QFET General Description These P-Channel enhancement mode power field effect transistors are produced using Fairchild s proprietary, planar stripe, DMOS technology. This advanced
More informationQFET TM FQP20N06. Features G D. TO-220 FQP Series
60V N-Channel MOSFET May 2001 QFET TM General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild s proprietary, planar stripe, DMOS technology. This
More informationDescription. TO-220 FCP Series. Symbol Parameter FDP61N20 Unit. Maximum Lead Temperature for Soldering Purpose, 300 C 1/8 from Case for 5 Seconds
FDP61N20 200V N-Channel MOSFET Features 61A, 200V, R DS(on) = 0.041Ω @ = 10 V Low gate charge ( typical 58 nc) Low C rss ( typical 80 pf) Fast switching 100% avalanche tested Improved dv/dt capability
More informationQFET FQE10N20LC. Features. TO-126 FQE Series
200V Logic N-Channel MOSFET QFET General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild s proprietary, planar stripe, DMOS technology. This advanced
More informationQFET TM FQP85N06. Features G D. TO-220 FQP Series
60V N-Channel MOSFET May 2001 QFET TM General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild s proprietary, planar stripe, DMOS technology. This
More informationQFET TM FQP13N50C/FQPF13N50C
500V N-Channel MOSFET General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild s proprietary, planar stripe, DMOS technology. This advanced technology
More informationFeatures. TO-220F IRFS Series
200V N-Channel MOSFET General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild s proprietary, planar, DMOS technology. This advanced technology has
More informationQFET TM FQP17P10. Features. TO-220 FQP Series
100V P-Channel MOSFET QFET TM General Description These P-Channel enhancement mode power field effect transistors are produced using Fairchild s proprietary, planar stripe, DMOS technology. This advanced
More informationQFET TM FQP4N90C/FQPF4N90C
900V N-Channel MOSFET General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild s proprietary, planar stripe, DMOS technology. This advanced technology
More informationQFET TM FQP13N06L. Features G D. TO-220 FQP Series
60V LOGIC N-Channel MOSFET May 2001 QFET TM General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild s proprietary, planar stripe, DMOS technology.
More informationQFET TM FQD18N20V2 / FQU18N20V2
200V N-Channel MOSFET General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild s proprietary, planar stripe, DMOS technology. This advanced technology
More informationFDB5800 N-Channel Logic Level PowerTrench MOSFET
FDB58 N-Channel Logic Level PowerTrench MOSFET 6V, 8A, 7mΩ Features r DS(ON) = 5.5mΩ (Typ.), V GS = 5V, I D = 8A High performance trench technology for extermely low Rdson Low Gate Charge High power and
More informationFJN13003 FJN NPN Silicon Transistor Planar Silicon Transistor
FJN3003 FJN3003 High Voltage Switch Mode Application High Speed Switching Suitable for Electronic Ballast up to 2W NPN Silicon Transistor Planar Silicon Transistor Absolute Maximum Ratings T C =25 C unless
More informationDescription. TO-3P FDA Series. Symbol Parameter FDA70N20 Unit. Maximum Lead Temperature for Soldering Purpose, 300 C 1/8 from Case for 5 Seconds
FDA70N20 200V N-Channel MOSFET Features 70A, 200V, R DS(on) = 0.035Ω @ = 10 V Low gate charge ( typical 66 nc) Low C rss ( typical 89 pf) Fast switching 100% avalanche tested Improved dv/dt capability
More informationELECTRICAL CHARACTERISTICS (25 Degrees C Ambient Temperature unless otherwise stated)
FLLD261 HIGH CONDUCTANCE LOW LEAKAGE DIODE PD....50 mw @ TA = 25 Deg C BV....200 V (MIN) @ IR = 5 ua ABSOLUTE MAXIMUM RATINGS (NOTE 1) TEMPERATURES Storage Temperature Operating Junction Temperature -55
More informationFQA8N100C 1000V N-Channel MOSFET
FQA8N100C 1000V N-Channel MOSFET Features 8A, 1000V, R DS(on) = 1.45Ω @ = 10 V Low gate charge (typical 53 nc) Low C rss (typical 16 pf) Fast switching 100% avalanche tested Improved dv/dt capability Description
More informationDescription. Symbol Parameter FDAF69N25 Unit. (Note 2) Maximum Lead Temperature for Soldering Purpose, 300 C 1/8 from Case for 5 Seconds
FDAF69N25 250V N-Channel MOSFET Features 34A, 250V, R DS(on) = 0.041Ω @ = 10 V Low gate charge ( typical 77 nc) Low Crss ( typical 84 pf) Fast switching Improved dv/dt capability Description September
More informationNDS0605 P-Channel Enhancement Mode Field Effect Transistor
NDS65 P-Channel Enhancement Mode Field Effect Transistor July NDS65 General Description These P-Channel enhancement mode field effect transistors are produced using Fairchild s proprietary, high cell density,
More informationQFET FQP9N25C/FQPF9N25C
250V N-Channel MOSFET General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild s proprietary, planar stripe, DMOS technology. This advanced technology
More informationFeatures TO-264 E. Symbol Description SGL40N150D Units V CES Collector-Emitter Voltage 1500 V V GES Gate-Emitter Voltage ± 25 V Collector T
SGLN5D September 2 IGBT SGLN5D General Description Fairchild s Insulated Gate Bipolar Transistor (IGBT) provides low conduction and switching losses. SGLN5D is designed for the Induction Heating applications.
More informationFeatures. TO-220F IRFS Series
500V N-Channel MOSFET General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild s proprietary, planar, DMOS technology. This advanced technology has
More informationBAV23S Small Signal Diode
BAV2S Small Signal Diode 2 L0 September 2006 tm Connection Diagram 1 1 2 SOT-2 1 2 Absolute Maximum Ratings * T a = 25 C unless otherwise noted Symbol Parameter Value Unit V RRM Maximum Repetitive Reverse
More informationFeatures. TA=25 o C unless otherwise noted
Dual N-Channel.V Specified PowerTrench MOSFET July 3 General Description These N-Channel.V specified MOSFETs use Fairchild Semiconductor s advanced PowerTrench process. It has been optimized for power
More informationFeatures S 1. T A=25 o C unless otherwise noted. Symbol Parameter Ratings Units. Pulsed 6 Power Dissipation for Single Operation (Note 1a) 0.
V N-Channel PowerTrench MOSFET October General Description This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional
More informationData Sheet December Features. Packaging. Symbol
HGTGN1BND Data Sheet December 1 3A, 1V, NPT Series N-Channel IGBT with Anti-Parallel Hyperfast Diode The HGTGN1BND is a Non-Punch Through (NPT) IGBT design. This is a new member of the MOS gated high voltage
More informationFJL6820. Symbol Parameter Typ Max Units R θjc Thermal Resistance, Junction to Case C/W
High Voltage Color Display Horizontal Deflection Output High Collector-Base Breakdown Voltage : BV CBO = 5V Low Saturation Voltage : (sat) = 3V (Max.) For Color Monitor NPN Triple Diffused Planar Silicon
More informationHGTG20N60A4D, HGT4E20N60A4DS
HGTG2N6A4D, HGT4E2N6A4DS Data Sheet APRIL 22 6V, SMPS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode This family of MOS gated high voltage switching devices combine the best features of MOSFETs
More informationFeatures. Symbol Description FGA25N120AN Units V CES Collector-Emitter Voltage 1200 V V GES Gate-Emitter Voltage ± 20 V Collector T
FGA25N2AN General Description Employing NPT technology, Fairchild s AN series of IGBTs provides low conduction and switching losses. The AN series offers an solution for application such as induction heating
More informationN-Channel Logic Level Enhancement Mode Field Effect Transistor. Features. TA=25 o C unless otherwise noted
September BSS38 BSS38 N-Channel Logic Level Enhancement Mode Field Effect Transistor General Description These N-Channel enhancement mode field effect transistors are produced using Fairchild s proprietary,
More informationData Sheet December Features. Packaging
HGTG12N6C3D Data Sheet December 21 24A, 6V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode The HGTG12N6C3D is a MOS gated high voltage switching device combining the best features of MOSFETs
More informationNon-repetitive Peak Surge Current 60Hz Single Half-Sine Wave. Symbol Parameter Ratings Units R θjc Maximum Thermal Resistance, Junction to Case 7
Features High Speed Switching, t rr < 70ns @ I F = A High Reverse Voltage and High Reliability RoHS compliant Applications General Purpose Switching Mode Power Supply Boost Diode in continuous mode power
More informationDescription ANODE CATHODE
ISL9R312G2 3 A, 12 V STEALTH Diode Features Stealth Recovery t rr = 269 ns (@ I F = 3 A) Max Forward Voltage, V F = 3.3 V (@ T C = 25 C) 12 V Reverse Voltage and High Reliability Avalanche Energy Rated
More informationSOT-23 Mark: 62V / 62W / 62X. TA = 25 C unless otherwise noted. Symbol Parameter Value Units
G S D J210 J211 J212 TO-92 This device is designed for HF/VHF mixer/amplifier and applications where Process 50 is not adequate. Sufficient gain and low noise for sensitive receivers. Sourced from Process
More informationFDP75N08A 75V N-Channel MOSFET
FDP75N08A 75V N-Channel MOSFET Features 75A, 75V, R DS(on) = 0.011Ω @ = 10 V Low gate charge ( typical 145nC) Low Crss ( typical 86pF) Fast switching Improved dv/dt capability Description July 2006 UniFET
More informationISL9R860P2, ISL9R860S3ST
ISL9RP, ISL9RS3ST A, V, STEALTH Diode Features Stealth Recovery trr = ns (@ IF = A) Max Forward Voltage, VF =. V (@ TC = 5 C) V Reverse Voltage and High Reliability Avalanche Energy Rated RoHS Compliant
More informationNon-repetitive Peak Surge Current 60Hz Single Half-Sine Wave. Symbol Parameter Ratings Units R θjc Maximum Thermal Resistance, Junction to Case 1.
Features High Speed Switching, t rr < ns @ I F = 3A High Reverse Voltage and High Reliability RoHS compliant Applications General Purpose Switching Mode Power Supply Boost Diode in continuous mode power
More informationFeatures. TO-3P FQA Series
FQA11N90 FQA11N90 900V N-Channel MOSFET September 2000 QFET TM General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild s proprietary, planar stripe,
More informationFeatures. I 2 -PAK FQI Series
100V N-Channel MOSFET General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild s proprietary, planar stripe, DMOS technology. This advanced technology
More informationFeatures. TA=25 o C unless otherwise noted
FDS667A Single N-Channel, Logic Level, PowerTrench MOSFET June 23 FDS667A General Description This N-Channel Logic Level MOSFET is produced using Fairchild Semiconductor s advanced PowerTrench process
More informationFJAF6810. h FE2 V CE =5V, I C =6A. Symbol Parameter Typ Max Units R θjc Thermal Resistance, Junction to Case 2.08 C/W
FJAF68 FJAF68 High Voltage Color Display Horizontal Deflection Output High Collector-Base Breakdown Voltage : BV CBO = 5V High Switching Speed : (typ.) =.µs For Color Monitor TO-3PF.Base 2.Collector 3.Emitter
More informationFeatures. 175 C maximum junction temperature rating. T A =25 o C unless otherwise noted
FDB62P 2V P-Channel.8V Specified PowerTrench MOSFET January 24 FDB62P General Description This P-Channel power MOSFET uses Fairchild s low voltage PowerTrench process. It has been optimized for power management
More informationFeatures I-PAK (TO-251AA) TA=25 o C unless otherwise noted
FDD73BL/FDU73BL 3V N-Channel PowerTrench MOSFET General Description This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or
More informationFJA4310. Symbol Parameter Value Units
FJA43 FJA43 Audio Power Amplifier High Current Capability : =A High Power Dissipation Wide S.O.A Complement to FJA42 TO-3P.Base 2.Collector 3.Emitter NPN Epitaxial Silicon Transistor Absolute Maximum Ratings
More informationFDD8780/FDU8780 N-Channel PowerTrench MOSFET 25V, 35A, 8.5mΩ General Description
E N FDD878/FDU878 N-Channel PowerTrench MOSFET 5V, 35A, 8.5mΩ General Description This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either
More informationFDP3651U N-Channel PowerTrench MOSFET 100V, 80A, 15mΩ Features
FDP365U N-Channel PowerTrench MOSFET V, 8A, 5mΩ Features r DS(on) =3 mω(typ.), V GS = V, I D = 4A Q g(tot) =49 nc(typ.), V GS = V Low Miller Charge Low Q rr Body Diode UIS Capability (Single Pulse/Repetitive
More informationFDD8778/FDU8778 N-Channel PowerTrench MOSFET 25V, 35A, 14mΩ Features
E N FDD8778/FDU8778 N-Channel PowerTrench MOSFET 25V, 35A, 4mΩ Features Max r DS(on) = 4.mΩ at V GS = V, I D = 35A Max r DS(on) = 2.mΩ at V GS = 4.5V, I D = 33A Low gate charge: Q g(tot) = 2.6nC(Typ),
More informationFeatures SLEW VDD. TA=25 o C unless otherwise noted
FDG90D Slew Rate Control Driver IC for P-Channel MOSFETs April 2002 FDG90D General Description The FDG90D is specifically designed to control the turn on of a P-Channel MOSFET in order to limit the inrush
More informationFDP V, 80A, 2.7mΩ. N-Channel PowerTrench MOSFET. FDP8441 N-Channel PowerTrench MOSFET. Applications. Features.
M E N FDP844 N-Channel PowerTrench MOSFET 4V, 8A, 2.7mΩ Features Typ r DS(on) = 2.mΩ at V GS = V, I D = 8A Typ Q g() = 25nC at V GS = V Low Miller Charge Low Q rr Body Diode UIS Capability (Single Pulse
More informationFDD V P-Channel PowerTrench MOSFET 40V, 32A, 27mΩ Features
FDD4685 V P-Channel PowerTrench MOSFET V, 3A, 7mΩ Features Max r DS(on) = 7mΩ at V GS = V, I D = 8.4A Max r DS(on) = 35mΩ at V GS = 4.5V, I D = 7A High performance trench technology for extremely low r
More informationFDMS8690 N-Channel PowerTrench MOSFET
FDMS869 N-Channel PowerTrench MOSFET 3V, 9.8A, 9mΩ General Description This device has been designed specifically to improve the efficiency of DC-DC converters. Using new techniques in MOSFET construction,
More informationFeatures. Symbol Parameter Q2 Q1 Units
Dual N-Channel, Notebook Power Supply MOSFET General Description Features This part is designed to replace two single SO-8 MOSFETs in synchronous DC:DC power supplies that provide the various peripheral
More informationFeatures. Symbol Description SGH23N60UFD Units V CES Collector-Emitter Voltage 600 V V GES Gate-Emitter Voltage ± 20 V Collector T
SGH23N6UFD Ultra-Fast IGBT September 2 IGBT SGH23N6UFD General Description Fairchild's Insulated Gate Bipolar Transistor(IGBT) UFD series provides low conduction and switching losses. UFD series is designed
More informationFDD8782/FDU8782 N-Channel PowerTrench MOSFET 25V, 35A, 11mΩ General Description
E N FDD878/FDU878 N-Channel PowerTrench MOSFET 5V, 35A, mω General Description This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous
More informationFeatures. TO-220 FQP Series
FQP70N10 FQP70N10 100V N-Channel MOSFET August 2000 QFET TM General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild s proprietary, planar stripe,
More informationFJN965 FJN965. NPN Epitaxial Silicon Transistor
For Output Amplifier of Electronic Flash Unit Low Collector-Emitter Saturation Voltage High Performance at Low Supply Voltage TO-92. Emitter 2. Collector 3. Base NPN Epitaxial Silicon Transistor Absolute
More informationFeatures. TO-220 FQP Series
FQP4N80 FQP4N80 800V N-Channel MOSFET September 000 QFET TM General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild s proprietary, planar stripe,
More informationFQP10N60C / FQPF10N60C 600V N-Channel MOSFET
FQP10N60C / FQPF10N60C 600V N-Channel MOSFET Features 9.5A, 600V, R DS(on) = 0.73Ω @ = 10 V Low gate charge ( typical 44 nc) Low Crss ( typical 18 pf) Fast switching 100% avalanche tested Improved dv/dt
More informationFQPF12N60CT 600V N-Channel MOSFET
FQPF12N60CT 600V N-Channel MOSFET Features 12A, 600V, R DS(on) = 0.65Ω @ = 10 V Low gate charge ( typical 48 nc) Low Crss ( typical 21 pf) Fast switching 100% avalanche tested Improved dv/dt capability
More information600V, SMPS II Series N-Channel IGBT with Anti-Parallel Stealth TM Diode. Features E C G. Device Maximum Ratings T C = 25 C unless otherwise noted
FGH5N6S2D 6V, SMPS II Series N-Channel IGBT with Anti-Parallel Stealth TM Diode General Description The FGH5N6S2D is a Low Gate Charge, Low Plateau Voltage SMPS II IGBT combining the fast switching speed
More informationFDB V N-Channel PowerTrench MOSFET
FDB264 200V N-Channel PowerTrench MOSFET General Description This N-Channel MOSFET is produced using Fairchild Semiconductor s advanced PowerTrench process that has been especially tailored to minimize
More information