Non-repetitive Peak Surge Current 60Hz Single Half-Sine Wave. Symbol Parameter Ratings Units R θjc Maximum Thermal Resistance, Junction to Case 1.

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Features High Speed Switching, t rr < ns @ I F = 3A High Reverse Voltage and High Reliability RoHS compliant Applications General Purpose Switching Mode Power Supply Boost Diode in continuous mode

1 Features High Speed Switching, t rr < I F = 3A High Reverse Voltage and High Reliability RoHS compliant Applications General Purpose Switching Mode Power Supply Boost Diode in continuous mode power factor corrections Power switching circuits STEALTH TM October 27 II Rectifier 3A, 6V STEALTH TM II Rectifier The is STEALTH TM II rectifier with soft recovery characteristics. It is silicon nitride passivated ionimplanted epitaxial planar construction. This device is intended for use as freewheeling of boost diode in switching power supplies and other power swithching applications. Their low stored charge and hyperfast soft recovery minimize ringing and electrical noise in many power switching circuits reducing power loss in the switching transistors. tm Pin Assigments TO222L. Cathode 2. Anode. Cathode 2. Anode Absolute Maximum Ratings unless otherwise noted Symbol Parameter Ratings Units V RRM Peak Repetitive Reverse Voltage 6 V V RWM Working Peak Reverse Voltage 6 V V R DC Blocking Voltage 6 V I F(AV) Average Rectified Forward = 3 o C 3 A I FSM Nonrepetitive Peak Surge Current 6Hz Single HalfSine Wave 3 A T J, T STG Operating and Storage Temperature Range 65 to +5 o C Thermal Characteristics Symbol Parameter Ratings Units R θjc Maximum Thermal Resistance, Junction to Case. o C/W Package Marking and Ordering Information Device Marking Device Package Reel Size Tape Width Quantity F3S6S TU TO222L 5 27 Fairchild Semiconductor Corporation Rev. A

2 Electrical Characteristics unless otherwise noted V FM I RM Symbol Parameter Min. Typ. Max. Units I F = 3A I F = 3A V R = 6V V R = 6V t rr I F = A, di/dt = A/µs, V R = 3V ns t rr I rr S factor Q rr I F = 3A, di/dt = 2A/µs, V R = 39V = 25o C t rr I rr S factor I F = 3A, di/dt = 2A/µs, V R = 39V = 25 C Q rr nc W AVL Avalanche Energy ( L = mh) 2 mj Notes: : Pulse: Test Pulse width = 3µs, Duty Cycle = 2% V µa ns A nc ns A Test Circuit and Waveforms Rev. A 2

3 Typical Performance Characteristics Figure. Typical Forward Voltage Drop vs. Forward Current 2 Figure 2. Typical Reverse Current vs. Reverse Voltage = 25 o C Forward Current, I F 25 o C 75 o C Reverse Current, I R [µa]. = 75 o C Forward Voltage, V F Reverse Voltage, V R Figure 3. Typical Junction Capacitance Capacitances, Cj [pf] Typical Capacitance at V = 27 pf Reverse Recovery Time, t rr [ns] Figure 4. Typical Reverse Recovery Time vs. di/dt 8 6 = 75 o C. Reverse Voltage, V R Figure 5. Typical Reverse Recovery Current vs. di/dt di/dt [A/µs] Figure 6. Forward Current Derating Curve 7 Reverse Recovery Current, I rr = 25 o C = 75 o C Average Forward Current, I F(AV) di/dt [A/µs] Case temperature, [ o C] Rev. A 3

4 Mechanical Dimensions TO222L Dimensions in Millimeters Rev. A 4

5 TRADEMARKS The following are registered and unregistered trademarks and service marks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACEx Build it Now CorePLUS CROSSVOLT CTL Current Transfer Logic EcoSPARK Fairchild Fairchild Semiconductor FACT Quiet Series FACT FAST FastvCore FPS FRFET Global Power Resource SM Green FPS Green FPS eseries GTO ilo IntelliMAX ISOPLANAR MegaBuck MICROCOUPLER MicroFET MicroPak MillerDrive MotionSPM OPTOLOGIC OPTOPLANAR PDPSPM Power22 Power247 POWEREDGE PowerSPM PowerTrench Programmable Active Droop QFET QS QT Optoelectronics Quiet Series RapidConfigure SMART START SPM STEALTH SuperFET SuperSOT 3 SuperSOT 6 SuperSOT 8 SyncFET The Power Franchise TinyBoost TinyBuck TinyLogic TINYOPTO TinyPower TinyPWM TinyWire µserdes UHC UniFET VCX DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION, OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. THESE SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILD S WORLDWIDE TERMS AND CONDITIONS, SPECIFICALLY THE WARRANTY THEREIN, WHICH COVERS THESE PRODUCTS. LIFE SUPPORT POLICY FAIRCHILD S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein:. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body or (b) support or sustain life, and (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in a significant injury to the user. 2. A critical component in any component of a life support, device, or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. PRODUCT STATUS DEFINITIONS Definition of Terms tm This datasheet contains the design specifications for product Datasheet Identification Product Status Definition Advance Information Preliminary No Identification Needed Obsolete Formative or In Design First Production Full Production Not In Production development. Specifications may change in any manner without notice. This datasheet contains preliminary data; supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve design. This datasheet contains specifications on a product that has been discontinued by Fairchild Semiconductor. The datasheet is printed for reference information only. Rev. I3 Rev. A 5

Non-repetitive Peak Surge Current 60Hz Single Half-Sine Wave. Symbol Parameter Ratings Units R θjc Maximum Thermal Resistance, Junction to Case 7

Non-repetitive Peak Surge Current 60Hz Single Half-Sine Wave. Symbol Parameter Ratings Units R θjc Maximum Thermal Resistance, Junction to Case 7 Features High Speed Switching, t rr < 70ns @ I F = A High Reverse Voltage and High Reliability RoHS compliant Applications General Purpose Switching Mode Power Supply Boost Diode in continuous mode power