ISL9V2540S3S EcoSPARK TM N-Channel Ignition IGBT 250mJ, 400V Features

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1 ISL9V24S3S EcoSPARK TM N-Channel Ignition IGBT 2mJ, 4V Features! SCIS Energy = 2mJ at T J = 2 o C! Logic Level Gate Drive Applications! Automotive Ignition Coil Driver Circuits! Coil - On Plug Applications General Description June The ISL9V24S3S is a next generation ignition IGBT that offers outstanding SCIS capability in the industry standard D²-Pak (TO-263) plastic package. This device is intended for use in automotive ignition circuits, specifically as a coil driver. Internal diodes provide voltage clamping without the need for external components. EcoSPARK devices can be custom made to specific clamp voltages. Contact your nearest Fairchild sales office for more information. Package Symbol COLLECTOR GATE EMITTER COLLECTOR (FLANGE) GATE R 1 R 2 JEDEC TO-263AB D 2 -Pak EMITTER ISL9V24S3S Rev. A

2 Device Maximum Ratings T A = 2 C unless otherwise noted Symbol Parameter Ratings Units BV CER Collector to Emitter Breakdown Voltage (I C = 1 ma) 43 V BV ECS Emitter to Collector Voltage - Reverse Battery Condition (I C = ma) 24 V E SCIS2 At Starting, I SCIS = 12.9A, L = 3.mHy 2 mj E SCIS At Starting T J = C, I SCIS = A, L = 3.mHy mj I C2 Collector Current Continuous, At T C = 2 C, See Fig 9. A I C1 Collector Current Continuous, At T C = 1 C, See Fig 9.3 A V GEM Gate to Emitter Voltage Continuous ± V P D Power Dissipation Total T C = 2 C W Power Dissipation Derating T C > 2 C 1.11 W/ C T J Operating Junction Temperature Range -4 to 17 C T STG Storage Junction Temperature Range -4 to 17 C T L Max Lead Temp for Soldering (Leads at 1.6mm from Case for s) 3 C T pkg Max Lead Temp for Soldering (Package Body for s) 26 C ESD Electrostatic Discharge Voltage at pf, Ω (HBM) 4 kv Package Marking and Ordering Information Device Marking Device Package Reel Size Tape Width Quantity V24S ISL9V24S3ST TO-263AB 33mm 24mm 8 units V24S ISL9V24S3S TO-263AB Tube N/A units Electrical Characteristics T A = 2 C unless otherwise noted Symbol Parameter Test Conditions Min Typ Max Units Off State Characteristics BV CER Collector to Emitter Breakdown Voltage I C = 2mA, V GE =, R G = 1KΩ, See Fig. T J = -4 to C BV CES Collector to Emitter Breakdown Voltage I C = ma, V GE =, R G =, See Fig. T J = -4 to C V V BV ECS Emitter to Collector Breakdown Voltage I C = -7mA, V GE = V, V T C = 2 C BV GES Gate to Emitter Breakdown Voltage I GES = ± 2mA ±12 ±14 - V I CER Collector to Emitter Leakage Current V CER = 2V, T C = 2 C µa R G = 1KΩ, See Fig. 11 T C = C ma I ECS Emitter to Collector Leakage Current V EC = 24V, See T C = 2 C ma Fig. 11 T C = C ma R 1 Series Gate Resistance Ω R 2 Gate to Emitter Resistance K - 26K Ω On State Characteristics V CE(SAT) Collector to Emitter Saturation Voltage I C = 6A, V GE = 4V V CE(SAT) Collector to Emitter Saturation Voltage I C = A, T C = 2 C, See Fig. 3 T C = C See Fig V V

3 Dynamic Characteristics Q G(ON) Gate Charge I C = A, V CE = 12V, V GE = V, See Fig nc V GE(TH) Gate to Emitter Threshold Voltage I C = 1.mA, T C = 2 C V V CE = V GE, T C = C V See Fig. V GEP Gate to Emitter Plateau Voltage I C = A, V CE = 12V V Switching Characteristics t d(on)r Current Turn-On Delay Time-Resistive V CE = 14V, R L = 1Ω, µs t riser Current Rise Time-Resistive V GE = V, R G = 1KΩ µs t d(off)l Current Turn-Off Delay Time-Inductive V CE = 3V, L = µhy, µs t fl Current Fall Time-Inductive V GE = V, R G = 1KΩ µs, See Fig. 12 SCIS Self Clamped Inductive Switching, L = 3.mHy, R G = 1KΩ, V GE = V, See Fig. 1 & mj Thermal Characteristics R θjc Thermal Resistance Junction-Case TO C/W

4 Typical Performance Curves I SCIS, INDUCTIVE SWITCHING CURRENT (A) R G = 1KΩ, V GE = V,V dd = 14V T J = C SCIS Curves valid for Vclamp Voltages of <43V t CLP, TIME IN CLAMP (µs) Figure 1. Self Clamped Inductive Switching Current vs Time in Clamp I CE = 6A V GE = 3.V V GE = 4.V V GE =.V T J, JUNCTION TEMPERATURE ( C) V GE =.V Figure 3. Collector to Emitter On-State Voltage vs Junction Temperature I SCIS, INDUCTIVE SWITCHING CURRENT (A) T J = C R G = 1KΩ, V GE = V,V dd = 14V SCIS Curves valid for V clamp Voltages of <43V L, INDUCTANCE (mhy) Figure 2. Self Clamped Inductive Switching Current vs Inductance I CE = A V GE = 4.V V GE = 3.V V GE =.V V GE =.V T J, JUNCTION TEMPERATURE ( C) Figure 4. Collector to Emitter On-State Voltage vs Junction Temperature I CE, COLLECTOR TO EMITTER CURRENT (A) V GE =.V V GE =.V V GE = 4.V V GE = 3.V V GE = 3.V T J = - 4 C Figure. Collector to Emitter On-State Voltage vs Collector Current I CE, COLLECTOR TO EMITTER CURRENT (A) V GE =.V V GE =.V V GE = 4.V V GE = 3.V V GE = 3.V Figure 6. Collector to Emitter On-State Voltage vs Collector Current

5 Typical Performance Curves (Continued) I CE, COLLECTOR TO EMITTER CURRENT (A) V GE =.V V GE =.V V GE = 4.V V GE = 3.V V GE = 3.V T J = 17 C Figure 7. Collector to Emitter On-State Voltage vs Collector Current I CE, DC COLLECTOR CURRENT (A) V GE = 4.V I CE, COLLECTOR TO EMITTER CURRENT (A) V TH, THRESHOLD VOLTAGE (V) DUTY CYCLE <.%, V CE = V PULSE DURATION = 2µs T J = 17 C T J = -4 C V GE, GATE TO EMITTER VOLTAGE (V) Figure 8. Transfer Characteristics V CE = V GE I CE = 1mA T C, CASE TEMPERATURE ( C) Figure 9. DC Collector Current vs Case Temperature T J JUNCTION TEMPERATURE ( C) Figure. Threshold Voltage vs Junction Temperature LEAKAGE CURRENT (µa) 1 V ECS = 24V V CES = 3V V CES = 2V T J, JUNCTION TEMPERATURE ( C) Figure 11. Leakage Current vs Junction Temperature SWITCHING TIME (µs) Inductive t OFF Resistive t OFF I CE = 6.A, V GE = V, R G = 1KΩ 3 Resistive t ON T J, JUNCTION TEMPERATURE ( C) Figure 12. Switching Time vs Junction Temperature

6 Typical Performance Curves (Continued) C, CAPACITANCE (pf) Figure 13. Capacitance vs Collector to Emitter Voltage BV CER, BREAKDOWN VOLTAGE (V) CRES CIES COES FREQUENCY = 1 MHz VCE, COLLECTOR TO EMITTER VOLTAGE (V) T J = 17 C V GE, GATE TO EMITTER VOLTAGE (V) I G(REF) = 1mA, R L = 1.2Ω, V CE = 12V V CE = 6V Q G, GATE CHARGE (nc) Figure 14. Gate Charge T J = - 4 C 4 R G, SERIES GATE RESISTANCE (Ω) Figure. Breakdown Voltage vs Series Gate Resistance Z θjc, NORMALIZED THERMAL RESPONSE SINGLE PULSE T 1, RECTANGULAR PULSE DURATION (s) DUTY FACTOR, D = t 1 / t 2 PEAK T J = (P D X Z θjc X R θjc ) + T C Figure 16. IGBT Normalized Transient Thermal Impedance, Junction to Case P D t 1 t 2

7 Test Circuit and Waveforms PULSE GEN R G G DUT Figure 17. Inductive Switching Test Circuit C E L V CE V CE V R G = 1KΩ G DUT + V CE - Figure 18. t ON and t OFF Switching Test Circuit C R or L BV CES E LOAD L t P V CE I AS VARY t P TO OBTAIN REQUIRED PEAK I AS V GE R G + V DD - V DD DUT V t P I AS.1Ω t AV Figure 19. Unclamped Energy Test Circuit Figure. Unclamped Energy Waveforms

8 SPICE Thermal Model REV 16 May ISL9V24S3S CTHERM1 th 6 19e -4 CTHERM2 6 12e -3 CTHERM3 4 e -3 CTHERM e -3 CTHERM e -3 CTHERM6 2 tl e -3 RTHERM1 th 6 8e -3 RTHERM2 6 81e -3 RTHERM3 4 82e -3 RTHERM4 4 3 e -3 RTHERM 3 2 e -3 RTHERM6 2 tl 164e -4 SABER Thermal Model ISL9V24S3S RTHERM1 RTHERM2 RTHERM3 RTHERM4 th 6 4 JUNCTION CTHERM1 CTHERM2 CTHERM3 CTHERM4 template thermal_model th tl thermal_c th, tl 3 { ctherm.ctherm1 th 6 = 19e -4 RTHERM CTHERM ctherm.ctherm2 6 = 12e -3 ctherm.ctherm3 4 = e -3 ctherm.ctherm4 4 3 = 2e -3 2 ctherm.ctherm 3 2 = 69e -3 ctherm.ctherm6 2 tl = e -3 RTHERM6 CTHERM6 rtherm.rtherm1 th 6 = 8e -3 rtherm.rtherm2 6 = 81e -3 rtherm.rtherm3 4 = 82e -3 tl CASE rtherm.rtherm4 4 3 = e -3 rtherm.rtherm 3 2 = e -3 rtherm.rtherm6 2 tl = 164e -4 }

9 TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACEx FAST ActiveArray FASTr Bottomless FPS Build it Now FRFET CoolFET GlobalOptoisolator CROSSVOLT GTO DOME HiSeC EcoSPARK I 2 C E 2 CMOS i-lo EnSigna ImpliedDisconnect FACT IntelliMAX FACT Quiet Series Across the board. Around the world. The Power Franchise Programmable Active Droop DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. LIFE SUPPORT POLICY FAIRCHILD S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in significant injury to the user. PRODUCT STATUS DEFINITIONS Definition of Terms ISOPLANAR LittleFET MICROCOUPLER MicroFET MicroPak MICROWIRE MSX MSXPro OCX OCXPro OPTOLOGIC OPTOPLANAR PACMAN POP Power247 PowerEdge PowerSaver PowerTrench QFET QS QT Optoelectronics Quiet Series RapidConfigure RapidConnect μserdes SILENT SWITCHER SMART START SPM Stealth SuperFET SuperSOT -3 SuperSOT A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. Datasheet Identification Product Status Definition SuperSOT -8 SyncFET TinyLogic TINYOPTO TruTranslation UHC UltraFET UniFET VCX Wire Advance Information Preliminary No Identification Needed Formative or In Design First Production Full Production This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. Obsolete Not In Production This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. Rev. I16

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