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1 Is Now Part of To learn more about ON Semiconductor, please visit our website at ON Semiconductor and the ON Semiconductor logo are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor s product/patent coverage may be accessed at ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by ON Semiconductor. Typical parameters which may be provided in ON Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including Typicals must be validated for each customer application by customer s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.

Dual Notebook Power Supply N-Channel PowerTrench SyncFet October 26 General Description The is designed to replace two single SO-8 MOSFETs and Schottky diode in synchronous DC:DC power supplies that

2 Dual Notebook Power Supply N-Channel PowerTrench SyncFet October 26 General Description The is designed to replace two single SO-8 MOSFETs and Schottky diode in synchronous DC:DC power supplies that provide various peripheral voltages for notebook computers and other battery powered electronic devices. contains two unique 3V, N-channel, logic level, PowerTrench MOSFETs designed to maximize power conversion efficiency. The high-side switch () is designed with specific emphasis on reducing switching losses while the lowside switch () is optimized to reduce conduction losses. also includes an integrated Schottky diode using Fairchild s monolithic SyncFET technology. Features : Optimized to minimize conduction losses Includes SyncFET Schottky body diode 8.2A, 3V R DS(on) = 5 V GS = V R DS(on) = 7.5 V GS = 4.5V : Optimized for low switching losses Low gate charge (85.5 nc typical) 6.9A, 3V R DS(on) = 2 V GS = V R DS(on) = 26 V GS = 4.5V D2 SO-8 D2 DD G2 SG S2 Absolute Maximum Ratings T A = 25 C unless otherwise noted Symbol Parameter Units V DSS Drain-Source Voltage 3 3 V V GSS Gate-Source Voltage ±6 ±6 V I D Drain Current - Continuous (Note a) A - Pulsed 3 2 P D Power Dissipation for Dual Operation 2 W Power Dissipation for Single Operation (Note a) (Note b) (Note c).9 T J, T STG Operating and Storage Junction Temperature Range -55 to +5 C Thermal Characteristics R θja Thermal Resistance, Junction-to-Ambient (Note a) 78 C/W R θjc Thermal Resistance, Junction-to-Case (Note ) 4 C/W Package Marking and Ordering Information Device Marking Device Reel Size Tape width Quantity 3 2mm 25 units 2 26 Fairchild Semiconductor Corporation Rev C2(W)

3 Electrical Characteristics T A = 25 C unless otherwise noted Symbol Parameter Test Conditions Type Min Typ Max Units Off Characteristics BV DSS Drain-Source Breakdown Voltage V GS = V, I D = ma V GS = V, I D = 25 ua 3 3 V BVDSS Breakdown Voltage I D = ma, Referenced to 25 C 23 T J Temperature Coefficient I D = 25 µa, Referenced to 25 C 24 mv/ C I DSS Zero Gate Voltage Drain V DS = 24 V, V GS = V 5 Current µa I GSS Gate-Body Leakage V GS = ±6 V, V DS = V All ± na On Characteristics (Note 2) V GS(th) Gate Threshold Voltage V DS = V GS, I D = ma V DS = V GS, I D = 25 µa VGS(th) Gate Threshold Voltage I D = ma, Referenced to 25 C T J Temperature Coefficient I D = 25 ua, Referenced to 25 C RDS(on) Static Drain-Source V GS = V, I D = 8.2A On-Resistance V GS = V, I D = 8.2 A, T J = 25 C V GS = 4.5 V, I D = 7.6 A V GS = V, I D = 6.9 A V GS = V, I D = 6.9 A, T J = 25 C V GS = 4.5 V, I D = 6.2 A I D(on) On-State Drain Current V GS = V, V DS = 5 V g FS Forward Transconductance V DS = V, I D = 8.2 A V DS = V, I D = 6.9 A Dynamic Characteristics C iss Input Capacitance V DS = 5 V, V GS = V, f =. MHz C oss Output Capacitance C rss Reverse Transfer Capacitance R G Gate Resistance V GS = 5 mv, f =. MHz V mv/ C mω A S pf pf pf Ω Rev C2(W)

4 Electrical Characteristics (continued) T A = 25 C unless otherwise noted Symbol Parameter Test Conditions Type Min Typ Max Units Switching Characteristics (Note 2) t d(on) Turn-On Delay Time V DD = 5 V, I D = A, 2 ns V GS = V, R GEN = 6 Ω 2 t r Turn-On Rise Time 8 6 ns 7 4 t d(off) Turn-Off Delay Time 5 8 ns t f Turn-Off Fall Time 7 3 ns 4 8 Q g Total Gate Charge : nc Q gs Gate-Source Charge V DS = 5 V, I D = 7.9 A, V GS = 5 V nc Q gd Gate-Drain Charge : V DS = 5 V, I D = 6.5 A, V GS = 5 V nc Drain Source Diode Characteristics and Maximum Ratings I S Maximum Continuous Drain-Source Diode Forward Current A t RR Reverse Recovery Time I F = 8.2 A, 25 ns Q RR Reverse Recovery Charge d if/d t = 3 A/µs (Note 3) 9 nc t RR Reverse Recovery Time I F = 6.9 A, 23 ns Q RR Reverse Recovery Charge d if/d t = A/µs (Note 3) nc V SD Drain-Source Diode Forward V GS = V, I S = 2.3 A (Note 2).4 7 V Voltage V GS = V, I S =.3 A (Note 2).53.2 Notes:. R θja is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. R θjc is guaranteed by design while R θca is determined by the user's board design. a) 78 C/W when mounted on a.5in 2 pad of 2 oz copper b) 25 C/W when mounted on a.2 in 2 pad of 2 oz copper c) 35 C/W when mounted on a minimum pad. Scale : on letter size paper 2. Pulse Test: Pulse Width < 3µs, Duty Cycle < 2.% 3. See SyncFET Schottky body diode characteristics below. Rev C2(W)

5 Typical Characteristics for 3 V GS = V 4.5V 2 3.5V 3.V 2.5V R DS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE V GS = 3.V 3.5V 4.V 4.5V 6.V V V DS, DRAIN-SOURCE VOLTAGE (V) Figure. On-Region Characteristics. Figure 2. On-Resistance Variation with Drain Current and Gate Voltage. R DS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE I D = 8.2A V GS = V R DS(ON), ON-RESISTANCE (OHM) T A = 25 o C T A = 25 o C I D = 4.A T J, JUNCTION TEMPERATURE ( o C) V GS, GATE TO SOURCE VOLTAGE (V) Figure 3. On-Resistance Variation with Temperature. Figure 4. On-Resistance Variation with Gate-to-Source Voltage V DS = 5V T A = 25 o C -55 o C 25 o C I S, REVERSE DRAIN CURRENT (A).. V GS = V T A = 25 o C 25 o C -55 o C V GS, GATE TO SOURCE VOLTAGE (V) V SD, BODY DIODE FORWARD VOLTAGE (V) Figure 5. Transfer Characteristics. Figure 6. Body Diode Forward Voltage Variation with Source Current and Temperature. Rev C2(W)

6 Typical Characteristics for V GS, GATE-SOURCE VOLTAGE (V) V I D =8.2A DS = V 8 2V V CAPACITANCE (pf) C rss C oss C iss f = MHz V GS = V Q g, GATE CHARGE (nc) V DS, DRAIN TO SOURCE VOLTAGE (V) Figure 7. Gate Charge Characteristics. Figure 8. Capacitance Characteristics. 5. R DS(ON) LIMIT V GS = V SINGLE PULSE R θja = 35 o C/W T A = 25 o C DC s s ms ms ms µs P(pk), PEAK TRANSIENT POWER (W) SINGLE PULSE R θja = 35 C/W T A = 25 C.. V DS, DRAIN-SOURCE VOLTAGE (V)... t, TIME (sec) Figure 9. Maximum Safe Operating Area. Figure. Single Pulse Maximum Power Dissipation. r(t), NORMALIZED EFFECTIVE TRANSIENT THERMAL RESISTANCE.. D = SINGLE PULSE..... t, TIME (sec) Figure. Transient Thermal Response Curve. Thermal characterization performed using the conditions described in Note c. Transient thermal response will change depending on the circuit board design. R θja (t) = r(t) * R θja R θja = 35 C/W P(pk) t t 2 T J - T A = P * R θja (t) Duty Cycle, D = t / t 2 Rev C2(W)

7 Typical Characteristics for 2 4.5V V GS = V 3.5V 3.V R DS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE V GS = 3.5V 4.V 4.5V 6.V V V DS, DRAIN TO SOURCE VOLTAGE (V) Figure. On-Region Characteristics. Figure 2. On-Resistance Variation with Drain Current and Gate Voltage. RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE I D = 6.9A V GS = V R DS(ON), ON-RESISTANCE (OHM) T A = 25 o C T A = 25 o C I D = 3.5A T J, JUNCTION TEMPERATURE ( o C) V GS, GATE TO SOURCE VOLTAGE (V) Figure 3. On-Resistance Variation with Temperature. Figure 4. On-Resistance Variation with Gate-to-Source Voltage V DS = 5V T A = 25 o C -55 o C 25 o C I S, REVERSE DRAIN CURRENT (A)... V GS = V T A = 25 o C 25 o C -55 C V GS, GATE TO SOURCE VOLTAGE (V) V SD, BODY DIODE FORWARD VOLTAGE (V) Figure 5. Transfer Characteristics. Figure 6. Body Diode Forward Voltage Variation with Source Current and Temperature. Rev C2(W)

8 Typical Characteristics V GS, GATE-SOURCE VOLTAGE (V) 5 V DS = V I D = 6.9A 4 2V 3 2 5V CAPACITANCE (pf) C oss C iss f = MHz V GS = V Qg, GATE CHARGE (nc) C rss V DS, DRAIN TO SOURCE VOLTAGE (V) Figure 7. Gate Charge Characteristics. Figure 8. Capacitance Characteristics.. R DS(ON) LIMIT V GS = V SINGLE PULSE R θja = 35 o C/W T A = 25 o C µs ms ms ms s s DC... V DS, DRAIN-SOURCE VOLTAGE (V) P(pk), PEAK TRANSIENT POWER (W) t, TIME (sec) SINGLE PULSE R θja = 35 C/W T A = 25 C Figure 9. Maximum Safe Operating Area. Figure 2. Single Pulse Maximum Power Dissipation. r(t), NORMALIZED EFFECTIVE TRANSIENT THERMAL RESISTANCE.. D = SINGLE PULSE..... t, TIME (sec) R θja (t) = r(t) * R θja R θja = 35 o C/W P(pk) t t 2 T J - T A = P * R θja (t) Duty Cycle, D = t / t 2 Figure 2. Transient Thermal Response Curve. Thermal characterization performed using the conditions described in Note c. Transient thermal response will change depending on the circuit board design. Rev C2(W)

9 Typical Characteristics (continued) This section copied from FDS6984S datasheet SyncFET Schottky Body Diode Characteristics Fairchild s SyncFET process embeds a Schottky diode in parallel with PowerTrench MOSFET. This diode exhibits similar characteristics to a discrete external Schottky diode in parallel with a MOSFET. Figure 22 shows the reverse recovery characteristic of the. 3A/DIV Schottky barrier diodes exhibit significant leakage at high temperature and high reverse voltage. This will increase the power in the device. I DSS, REVERSE LEAKAGE CURRENT (A) o C 25 o C. 2 3 V DS, REVERSE VOLTAGE (V) ns/div Figure 24. SyncFET body diode reverse leakage versus drain-source voltage and temperature. Figure 22. SyncFET body diode reverse recovery characteristic. For comparison purposes, Figure 23 shows the reverse recovery characteristics of the body diode of an equivalent size MOSFET produced without SyncFET (FDS669A). 3A/DIV V ns/div Figure 23. Non-SyncFET (FDS669A) body diode reverse recovery characteristic. Rev C2(W)

10 TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACEx ActiveArray Bottomless Build it Now CoolFET CROSSVOLT DOME EcoSPARK E 2 CMOS EnSigna FACT FAST FASTr FPS FRFET FACT Quiet Series GlobalOptoisolator GTO HiSeC I 2 C i-lo ImpliedDisconnect IntelliMAX ISOPLANAR LittleFET MICROCOUPLER MicroFET MicroPak MICROWIRE MSX MSXPro Across the board. Around the world. The Power Franchise Programmable Active Droop OCX OCXPro OPTOLOGIC OPTOPLANAR PACMAN POP Power247 PowerEdge PowerSaver PowerTrench QFET QS QT Optoelectronics Quiet Series RapidConfigure RapidConnect μserdes ScalarPump SILENT SWITCHER SMART START SPM Stealth SuperFET SuperSOT -3 SuperSOT -6 SuperSOT -8 SyncFET TCM TinyBoost TinyBuck TinyPWM TinyPower TinyLogic TINYOPTO TruTranslation UHC UniFET UltraFET VCX Wire DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION, OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. THESE SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILD S WORLDWIDE TERMS AND CONDITIONS, SPECIFICALLY THE WARRANTY THEREIN, WHICH COVERS THESE PRODUCTS. LIFE SUPPORT POLICY FAIRCHILD S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein:. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in significant injury to the user. 2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Definition Advance Information Formative or In Design This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. Preliminary First Production This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve design. No Identification Needed Full Production This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve design. Obsolete Not In Production This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. Rev. I2

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