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1 Is Now Part of To learn more about ON Semiconductor, please visit our website at ON Semiconductor and the ON Semiconductor logo are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor s product/patent coverage may be accessed at ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by ON Semiconductor. Typical parameters which may be provided in ON Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including Typicals must be validated for each customer application by customer s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.
2 FDYPZ Single P-Channel (.5V) Specified PowerTrench MOSFET General Description This Single P-Channel MOSFET has been designed using Fairchild Semiconductor s advanced Power Trench process to optimize the R V GS =.5v. Applications Li-Ion Battery Pack Absolute Maximum Ratings Features T A =5 o C unless otherwise noted January 6 5 ma, V R DS(ON) = 8 V GS = 4.5 V R DS(ON) = V GS =.5 V ESD protection diode (note 3) RoHS Compliant Symbol Parameter Ratings Units V DSS Drain-Source Voltage V V GSS Gate-Source Voltage ± 8 V I D P D D T J, T STG S G Drain Current Continuous (Note a) 5 ma Pulsed Power Dissipation (Steady State) (Note a) 65 mw Operating and Storage Junction Temperature Range G S (Note b) to +5 C 3 D FDYPZ Single P-Channel (.5V) Specified PowerTrench MOSFET Thermal Characteristics R θja Thermal Resistance, Junction-to-Ambient (Note a) C/W R θja Thermal Resistance, Junction-to-Ambient (Note b) 8 Package Marking and Ordering Information Device Marking Device Reel Size Tape width Quantity B FDYPZ 7 8 mm 3 units 6 Fairchild Semiconductor Corporation FDYPZ Rev A
3 Electrical Characteristics T A = 5 C unless otherwise noted Symbol Parameter Test Conditions Min Typ Max Units Off Characteristics BV DSS Drain Source Breakdown Voltage V GS = V, I D = 5 µa V BVDSS T J Breakdown Voltage Temperature Coefficient I D = 5 µa, Referenced to 5 C 5 mv/ C I DSS Zero Gate Voltage Drain Current V DS = 6 V, V GS = V 3 µa I GSS Gate Body Leakage, V GS = ± 8 V, V DS = V ± µa On Characteristics (Note ) V GS(th) Gate Threshold Voltage V DS = V GS, I D = 5 µa V V GS(th) Gate Threshold Voltage I D = 5 µa, Referenced to 5 C 3 mv/ C T J Temperature Coefficient R DS(on) Static Drain Source On Resistance Ω V GS = 4.5 V, I D = 5 ma V GS =.5 V, I D = 5 ma V GS =.8 V, I D = ma V GS =.5 V,I D = 3 ma V GS = 4.5 V, I D = 5mA, T J = 5 C g FS Forward Transconductance V DS = 5 V, I D = 5 ma.7 S Dynamic Characteristics C iss Input Capacitance V DS = V, V GS = V, pf C oss Output Capacitance f =. MHz 3 pf C rss Reverse Transfer Capacitance 5 pf Switching Characteristics (Note ) t d(on) Turn On Delay Time V DD = V, I D =.5 A, 6 ns t r Turn On Rise Time V GS = 4.5 V, R GEN = 6 Ω 3 3 ns t d(off) Turn Off Delay Time 8 6 ns Turn Off Fall Time ns t f Q g Total Gate Charge V DS = V, I D = 5 ma,..4 nc Q gs Gate Source Charge V GS = 4.5 V. nc Q gd Gate Drain Charge.3 nc Drain Source Diode Characteristics and Maximum Ratings V SD Drain Source Diode Forward Voltage V GS = V, I S = 5 ma(note ).8. V t rr Diode Reverse Recovery Time I F = 5 ma, ns Diode Reverse Recovery Charge di F /dt = A/µs nc Q rr 8 5 FDYPZ Single P-Channel (.5V) Specified PowerTrench MOSFET Notes:. R θja is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. R θjc is guaranteed by design while R θca is determined by the user's board design. a) C/W when mounted on a in pad of oz copper b) 8 C/W when mounted on a minimum pad of oz copper Scale : on letter size paper. Pulse Test: Pulse Width < 3µs, Duty Cycle <.% 3. The diode connected between the gate and source serves only as protection againts ESD. No gate overvoltage rating is implied. FDYPZ Rev A
4 Typical Characteristics -I D, DRAIN CURRENT (A) R DS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE V GS = -4.5V -3.5V -3.V -.5V -.V -.8V -.5V.5.5 -V DS, DRAIN TO SOURCE VOLTAGE (V) Figure. On-Region Characteristics. I D = -.5A V GS = -4.5V T J, JUNCTION TEMPERATURE ( o C) igure 3. On-Resistance Variation with Temperature. R DS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE R DS(ON), ON-RESISTANCE (OHM) V GS =-.5V -.V -.8V -.5V -3.V -3.5V -4.5V I D, DRAIN CURRENT (A) Figure. On-Resistance Variation with Drain Current and Gate Voltage. T A = 5 o C T A = 5 o C I D = -.75A V GS, GATE TO SOURCE VOLTAGE (V) Figure 4. On-Resistance Variation with Gate-to-Source Voltage. FDYPZ Single P-Channel (.5V) Specified PowerTrench MOSFET -I D, DRAIN CURRENT (A) V DS = -5V T A = 5 o C 5 o C -55 o C V GS, GATE TO SOURCE VOLTAGE (V) -I S, REVERSE DRAIN CURRENT (A).... V GS = V T A = 5 o C 5 o C -55 o C V SD, BODY DIODE FORWARD VOLTAGE (V) Figure 5. Transfer Characteristics. Figure 6. Body Diode Forward Voltage Variation with Source Current and Temperature. FDYPZ Rev A
5 Typical Characteristics -V GS, GATE-SOURCE VOLTAGE (V) -I D, DRAIN CURRENT (A) I D = -.5A V DS = -5V -V -5V Q g, GATE CHARGE (nc) Figure 7. Gate Charge Characteristics. R DS(ON) LIMIT V GS = -4.5V SINGLE PULSE R θja = 8 o C/W T A = 5 o C... -V DS, DRAIN-SOURCE VOLTAGE (V) DC ms ms ms s s µs Figure 9. Maximum Safe Operating Area. CAPACITANCE (pf) P(pk), PEAK TRANSIENT POWER (W) C rss C oss V DS, DRAIN TO SOURCE VOLTAGE (V) C iss f = MHz V GS = V Figure 8. Capacitance Characteristics. SINGLE PULSE R θja = 8 C/W T A = 5 C.... t, TIME (sec) Figure. Single Pulse Maximum Power Dissipation. FDYPZ Single P-Channel (.5V) Specified PowerTrench MOSFET r(t), NORMALIZED EFFECTIVE TRANSIENT THERMAL RESISTANCE D =.5... P(pk).5. t t. TJ - TA = P * R θja(t) Duty Cycle, D = t / t SINGLE PULSE..... t, TIME (sec) R θja (t) = r(t) * R θja R θja =8 C/W Figure. Transient Thermal Response Curve. Thermal characterization performed using the conditions described in Note b. Transient thermal response will change depending on the circuit board design. FDYPZ Rev A
6 Dimensional Outline and Pad Layout (.5) SEE DETAIL A LAND PATTERN RECOMMENDATION..4 FDYPZ Single P-Channel (.5V) Specified PowerTrench MOSFET.. DETAIL A SCALE : NOTES: UNLESS OTHERWISE SPECIFIED A) THIS PACKAGE CONFORMS TO EIAJ SC89 PACKAGING STANDARD. B) ALL DIMENSIONS ARE IN MILLIMETERS. C) DIMENSIONS ARE EXCLUSIVE OF BURRS, MOLD FLASH, AND TIE BAR EXTRUSIONS. FDYPZ Rev A
7 TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACEx FAST ActiveArray FASTr Bottomless FPS Build it Now FRFET CoolFET GlobalOptoisolator CROSSVOLT GTO DOME HiSeC EcoSPARK I C E CMOS i-lo EnSigna ImpliedDisconnect FACT IntelliMAX FACT Quiet Series Across the board. Around the world. The Power Franchise Programmable Active Droop DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. LIFE SUPPORT POLICY FAIRCHILD S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein:. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in significant injury to the user. PRODUCT STATUS DEFINITIONS Definition of Terms ISOPLANAR LittleFET MICROCOUPLER MicroFET MicroPak MICROWIRE MSX MSXPro OCX OCXPro OPTOLOGIC OPTOPLANAR PACMAN POP Power47 PowerEdge PowerSaver PowerTrench QFET QS QT Optoelectronics Quiet Series RapidConfigure RapidConnect μserdes ScalarPump SILENT SWITCHER SMART START SPM Stealth SuperFET SuperSOT -3. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. Datasheet Identification Product Status Definition SuperSOT -6 SuperSOT -8 SyncFET TCM TinyLogic TINYOPTO TruTranslation UHC UltraFET UniFET VCX Wire Advance Information Preliminary No Identification Needed Formative or In Design First Production Full Production This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. Obsolete Not In Production This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. Rev. I8
8 ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor s product/patent coverage may be accessed at Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by ON Semiconductor. Typical parameters which may be provided in ON Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including Typicals must be validated for each customer application by customer s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLICATION ORDERING INFORMATION LITERATURE FULFILLMENT: Literature Distribution Center for ON Semiconductor 95 E. 3nd Pkwy, Aurora, Colorado 8 USA Phone: or Toll Free USA/Canada Fax: or Toll Free USA/Canada orderlit@onsemi.com Semiconductor Components Industries, LLC N. American Technical Support: Toll Free USA/Canada Europe, Middle East and Africa Technical Support: Phone: Japan Customer Focus Center Phone: ON Semiconductor Website: Order Literature: For additional information, please contact your local Sales Representative
9 Mouser Electronics Authorized Distributor Click to View Pricing, Inventory, Delivery & Lifecycle Information: Fairchild Semiconductor: FDYPZ
Is Now Part of To learn more about ON Semiconductor, please visit our website at
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Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com ON Semiconductor and the ON Semiconductor logo are trademarks of Semiconductor Components Industries, LLC
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FDMA38N Dual N-Channel PowerTrench MOSFET 3 V, 3.8 A, 68 mω Features Max. R DS(on) = 68 mω at V GS =.5 V, I D = 3.8 A Max. R DS(on) = 88 mω at V GS =.5 V, I D = 3. A Max. R DS(on) = 3 mω at V GS =.8 V,
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More informationIs Now Part of To learn more about ON Semiconductor, please visit our website at
Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com ON Semiconductor and the ON Semiconductor logo are trademarks of Semiconductor Components Industries, LLC
More informationIs Now Part of. To learn more about ON Semiconductor, please visit our website at
Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers
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More informationIs Now Part of To learn more about ON Semiconductor, please visit our website at
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