FDP8D5N10C / FDPF8D5N10C/D
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1 FDP8D5NC / FDPF8D5NC N-Channel Shielded Gate PowerTrench MOSFET V, 76 A, 8.5 mω Features Max r DS(on) = 8.5 mω at V GS = V, I D = 76 A Extremely Low Reverse Recovery Charge, Qrr % UIL Tested RoHS Compliant G D S TO-22 G D S General Description This N-Channel MV MOSFET is produced using ON Semiconductor s advanced PowerTrench process that incorporates Shielded Gate technology. This process has been optimized to minimize on-state resistance and yet maintain superior switching performance with best in class soft body diode. Applications Synchronous Rectification for ATX / Server / Telecom PSU Motor drives and Uninterruptible Power Supplies Micro Solar Inverter TO-22F MOSFET Maximum Ratings T C = 25 C unless otherwise noted. Symbol Parameter Ratings FDP8D5NC FDPF8D5NC Units V DS Drain to Source Voltage V V GS Gate to Source Voltage ±2 ±2 V I D -Continuous T C = C (Note 3) 54 54* A Drain Current -Continuous T C = 25 C (Note 3) 76 76* -Pulsed (Note ) 34 34* E AS Single Pulse Avalanche Energy (Note 2) 8 mj Power Dissipation T P C = 25 C 7 35 D Power Dissipation T A = 25 C W T J, T STG Operating and Storage Junction Temperature Range -55 to to +75 C * Drain current limited by maximum junction temperature. G D S FDP8D5NC / FDPF8D5NC N-Channel Shielded Gate PowerTrench MOSFET Thermal Characteristics Symbol Parameter FDP8D5NC FDPF8D5NC Units R θjc Thermal Resistance, Junction to Case C/W R θja Thermal Resistance, Junction to Ambient Package Marking and Ordering Information Device Marking Device Package Reel Size Tape Width Quantity FDP8D5NC FDP8D5NC TO units FDPF8D5NC FDPF8D5NC TO-22F units Semiconductor Components Industries, LLC, 27 May, 27, Rev.. Publication Order Number: FDP8D5NC / FDPF8D5NC/D
2 Electrical Characteristics T J = 25 C unless otherwise noted. Symbol Parameter Test Conditions Min. Typ. Max. Units Off Characteristics BV DSS Drain to Source Breakdown Voltage I D = 25 μa, V GS = V V ΔBV DSS ΔT J On Characteristics Breakdown Voltage Temperature Coefficient Dynamic Characteristics Switching Characteristics Drain-Source Diode Characteristic I D = 25 μa, referenced to 25 C 57 mv/ C V DS = 8 V, V GS = V μa I DSS Zero Gate Voltage Drain Current V DS = 8 V, T J = 5 C 5 μa I GSS Gate to Source Leakage Current V GS = ±2 V, V DS = V ± na V GS(th) Gate to Source Threshold Voltage V GS = V DS, I D = 3 μa V r DS(on) Static Drain to Source On Resistance V GS = V, I D = 76 A mω g FS Forward Transconductance V DS = 5 V, I D = 76 A 68 S C iss Input Capacitance pf V DS = 5 V, V GS = V, C oss Output Capacitance 45 pf f = MHz C rss Reverse Transfer Capacitance 6 25 pf R g Gate Resistance..8.6 Ω t d(on) Turn-On Delay Time 2 22 ns t r Rise Time V DD = 5 V, I D = 76 A, 2 ns t d(off) Turn-Off Delay Time V GS = V, R GEN = 6 Ω 8 28 ns t f Fall Time 4 ns Q g Total Gate Charge V GS = V to V nc VDD = 5 V, Q gs Gate to Source Gate Charge 9 nc I D = 76 A Q gd Gate to Drain Miller Charge 5 nc Q oss Output Charge V DD = 5 V, V GS = V 68 nc I S Maximum Continuous Drain to Source Diode Forward Current A I SM Maximum Pulsed Drain to Source Diode Forward Current A V SD Source to Drain Diode Forward Voltage V GS = V, I S = 76 A..3 V t rr Reverse Recovery Time V GS = V, V DD = 5 V, I F = 76 A, ns Q rr Reverse Recovery Charge di F /dt = A/μs nc t rr Reverse Recovery Time V GS = V, V DD = 5 V, I F = 76 A, 5 8 ns Q rr Reverse Recovery Charge di F /dt = 3 A/μs nc FDP8D5NC / FDPF8D5NC N-Channel Shielded Gate PowerTrench MOSFET Notes:. Pulsed Id please refer to Figure & Figure 2 Forward Bias Safe Operating Area for more details. 2. E AS of 8 mj is based on starting T J = 25 C, L = 3 mh, I AS = A, V DD = V, V GS = V. % test at L =.3 mh, I AS = 25 A. 3. Computed continuous current limited to Max Junction Temperature only, actual continuous current will be limited by thermal & electro-mechanical application board design. 2
3 Typical Characteristics T J = 25 C unless otherwise noted. ID, DRAIN CURRENT (A) NORMALIZED DRAIN TO SOURCE ON-RESISTANCE I D, DRAIN CURRENT (A) Figure. I D = 76 A V GS = V V GS = V V GS = 8 V PULSE DURATION = 8 μs DUTY CYCLE =.5% MAX V GS = 6 V V GS = 5.5 V V DS, DRAIN TO SOURCE VOLTAGE (V) V GS = 5 V NORMALIZED DRAIN TO SOURCE ON-RESISTANCE V GS = V PULSE DURATION = 8 μs DUTY CYCLE =.5% MAX On Region Characteristics Figure 2. Normalized On-Resistance vs. Drain Current and Gate Voltage T J, JUNCTION TEMPERATURE ( o C) Figure 3. Normalized On Resistance vs. Junction Temperature PULSE DURATION = 8 μs DUTY CYCLE =.5% MAX V DS = 5 V T J = 75 o C T J = 25 o C T J = -55 o C V GS, GATE TO SOURCE VOLTAGE (V) rds(on), DRAIN TO SOURCE ON-RESISTANCE (mω) IS, REVERSE DRAIN CURRENT (A) Figure 4. V GS = 5 V V GS = 5.5 V I D, DRAIN CURRENT (A) I D = 76 A T J = 5 o C V GS = 6 V V GS = 8 V PULSE DURATION = 8 μs DUTY CYCLE =.5% MAX T J = 25 o C V GS = V V GS, GATE TO SOURCE VOLTAGE (V) On-Resistance vs. Gate to Source Voltage T J = 75 o C T J = 25 o C T J = -55 o C V SD, BODY DIODE FORWARD VOLTAGE (V) FDP8D5NC / FDPF8D5NC N-Channel Shielded Gate PowerTrench MOSFET Figure 5. Transfer Characteristics Figure 6. Source to Drain Diode Forward Voltage vs. Source Current 3
4 Typical Characteristics T J = 25 C unless otherwise noted. VGS, GATE TO SOURCE VOLTAGE (V) IAS, AVALANCHE CURRENT (A) I D = 76 A Q g, GATE CHARGE (nc) Figure V DD = 25 V V DD = 5 V V DD = 75 V f = MHz V GS = V. V DS, DRAIN TO SOURCE VOLTAGE (V) Gate Charge Characteristics Figure 8. Capacitance vs. Drain to Source Voltage T J = 25 o C T J = 5 o C T J = 25 o C.. t AV, TIME IN AVALANCHE (ms) Figure 9. Unclamped Inductive Switching Capability CAPACITANCE (pf) I D, DRAIN CURRENT (A) R θjc =.4 o C/W C iss C oss C rss V GS = V T C, CASE TEMPERATURE ( o C) Figure. Maximum Continuous Drain Current vs. Case Temperature for FDP8D5NC 5 FDP8D5NC / FDPF8D5NC N-Channel Shielded Gate PowerTrench MOSFET ID, DRAIN CURRENT (A) THIS AREA IS LIMITED BY r DS(on) T J = MAX RATED μs μs ms R θjc =.4 o C/W CURVE BENT TO ms T ms C = 25 o C MEASURED DATA.. 4 V DS, DRAIN to SOURCE VOLTAGE (V) ID, DRAIN CURRENT (A) THIS AREA IS LIMITED BY r DS(on) T J = MAX RATED μs μs ms R θjc = 4.2 o C/W CURVE BENT TO ms T MEASURED DATA ms C = 25 o C.. 4 V DS, DRAIN to SOURCE VOLTAGE (V) Figure. Forward Bias Safe Operating Area for FDP8D5NC Figure 2. Forward Bias Safe Operating Area for FDPF8D5NC 4
5 Typical Characteristics T J = 25 C unless otherwise noted. P(PK), PEAK TRANSIENT POWER (W) 5 Figure 3. r(t), NORMALIZED EFFECTIVE TRANSIENT THERMAL RESISTANCE r(t), NORMALIZED EFFECTIVE TRANSIENT THERMAL RESISTANCE R θjc =.4 o C/W T C = 25 o C t, PULSE WIDTH (sec) 2.. Single Pulse Maximum Power Dissipation for FDP8D5NC DUTY CYCLE-DESCENDING ORDER D = Figure 5. P(PK), PEAK TRANSIENT POWER (W) 5 Figure 4. R θjc = 4.2 o C/W T C = 25 o C t, PULSE WIDTH (sec) Single Pulse Maximum Power Dissipation for FDPF8D5NC Figure 6. t, RECTANGULAR PULSE DURATION (sec) NOTES: P DM t t 2 Z θjc (t) = r(t) x R θjc R θjc =.4 o C/W Peak T J = P DM x Z θjc (t) + T C Duty Cycle, D = t / t 2 Junction-to-Case Transient Thermal Response Curve for FDP2D3NC DUTY CYCLE-DESCENDING ORDER D = Z θjc (t) = r(t) x R θjc R θjc = 4.2 o C/W Peak T J = P DM x Z θjc (t) + T C Duty Cycle, D = t / t t, RECTANGULAR PULSE DURATION (sec) NOTES: Junction-to-Case Transient Thermal Response Curve for FDPF2D3NC P DM t t 2 FDP8D5NC / FDPF8D5NC N-Channel Shielded Gate PowerTrench MOSFET 5
6 Dimensional Outline and Pad Layout TO-22, Molded, 3-Lead, Jedec Variation AB (Delta) FDP8D5NC / FDPF8D5NC N-Channel Shielded Gate PowerTrench MOSFET ON Semiconductor and the ON Logo are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor's product/patent coverage may be accessed at /site/pdf/patent-marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by ON Semiconductor. Typical parameters which may be provided in ON Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including Typicals must be validated for each customer application by customer's technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. 6
7 Dimensional Outline and Pad Layout FDP8D5NC / FDPF8D5NC N-Channel Shielded Gate PowerTrench MOSFET TO22, Molded, 3-Lead, Full Pack, EIAJ SC9, Straight Lead ON Semiconductor and the ON Logo are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor's product/patent coverage may be accessed at /site/pdf/patent-marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by ON Semiconductor. Typical parameters which may be provided in ON Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including Typicals must be validated for each customer application by customer's technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. 7
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More informationDual N-Channel, Digital FET
FDG6301N-F085 Dual N-Channel, Digital FET Features 25 V, 0.22 A continuous, 0.65 A peak. R DS(ON) = 4 @ V GS = 4.5 V, R DS(ON) = 5 @ V GS = 2.7 V. Very low level gate drive requirements allowing directoperation
More informationDescription. - Derate above 25 C 0.39 W/ C T J, T STG Operating and Storage Temperature Range -55 to +150 C
FQD5N60C / FQU5N60C N-Channel QFET MOSFET 600 V,.8 A,.5 Ω Features.8 A, 600 V, R DS(on) =.5 Ω (Max.) @ = 10 V, = 1.4 A Low Gate Charge ( Typ. 15 nc) Low Crss (Typ. 6.5 pf) 100% Avalanche Tested RoHS compliant
More informationFCH190N65F-F085 N-Channel SuperFET II FRFET MOSFET
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More informationNTP082N65S3F. Power MOSFET, N-Channel, SUPERFET III, FRFET, 650 V, 40 A, 82 m
Power MOSFET, N-Channel, SUPERFET III, FRFET, 650 V, 40 A, 82 m Description SUPERFET III MOSFET is ON Semiconductor s brand new high voltage super junction (SJ) MOSFET family that is utilizing charge balance
More informationAbsolute Maximum Ratings T C = 25 o C, Unless Otherwise Specified BUZ11 Drain to Source Breakdown Voltage (Note 1)
Data Sheet September 213 File Number 2253.2 N-Channel Power MOSFET 5V, 3A, 4 mω This is an N-Channel enhancement mode silicon gate power field effect transistor designed for applications such as switching
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Power MOSFET, N-Channel, SUPERFET III, Easy Drive, 650 V, 30 A, 99 m Description SUPERFET III MOSFET is ON Semiconductor s brand new high voltage super junction (SJ) MOSFET family that is utilizing charge
More informationFCD360N65S3R0. N Channel SUPERFET III Easy-Drive MOSFET. 650 V, 10 A, 360 m
N Channel SUPERFET III Easy-Drive MOSFET 650 V, 0 A, 360 m Description SuperFET III MOSFET is ON Semiconductor s brand new high voltage super-junction (SJ) MOSFET family that is utilizing charge balance
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Power MOSFET, N-Channel, SUPERFET III, FRFET, 650 V, 65 A, 40 m Description SUPERFET III MOSFET is ON Semiconductor s brand new high voltage super junction (SJ) MOSFET family that is utilizing charge balance
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Power MOSFET, N-Channel, SUPERFET III, Easy Drive, 650 V, 9 A, 65 m Description SUPERFET III MOSFET is ON Semiconductor s brand new high voltage super junction (SJ) MOSFET family that is utilizing charge
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FFSP1665A Silicon Carbide Schottky Diode 65 V, 16 A Features Max Junction Temperature 175 o C Avalanche Rated 81 mj High Surge Current Capacity Positive Temperature Coefficient Ease of Paralleling No Reverse
More informationFFSP1065A/D. Silicon Carbide Schottky Diode 650 V, 10 A Features. FFSP1065A Silicon Carbide Schottky Diode. Description.
FFSP65A Silicon Carbide Schottky Diode 65 V, A Features Max Junction Temperature 75 o C Avalanche Rated 6 mj High Surge Current Capacity Positive Temperature Coefficient Ease of Paralleling No Reverse
More informationFDS6986AS Dual Notebook Power Supply N-Channel PowerTrench SyncFET
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More informationFeatures S 1. TA=25 o C unless otherwise noted
FC5P V P-Channel Logic Level PowerTrench MOSFET FC5P General escription This V P-Channel MOSFET uses ON Semiconductor s high voltage PowerTrench process. It has been optimized for power management applications.
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More informationNCV8440, NCV8440A. Protected Power MOSFET. 2.6 A, 52 V, N Channel, Logic Level, Clamped MOSFET w/ ESD Protection
Protected Power MOSFET 2.6 A, 52 V, N Channel, Logic Level, Clamped MOSFET w/ ESD Protection Features Diode Clamp Between Gate and Source ESD Protection Human Body Model 5 V Active Over Voltage Gate to
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More informationFDPC5030SG. POWERTRENCH Power Clip 30 V Asymmetric Dual N Channel MOSFET
POWERTRENCH Power Clip V Asymmetric Dual N Channel MOSFET General Description This device includes two specialized N-Channel MOSFETs in a dual package. The switch node has been internally connected to
More informationFeatures -4 A, -30 V. R DS(ON) G 3. = 25 C unless otherwise note. Symbol Parameter Ratings Units. Drain-Source Voltage -30 V
FC65P Single P-Channel, Logic Level, PowerTrench TM MOSFET General escription This P-Channel Logic Level MOSFET is produced using ON Semiconductor's advanced PowerTrench process that has been especially
More informationNTMFD4C20N. Dual N-Channel Power MOSFET. 30 V, High Side 18 A / Low Side 27 A, Dual N Channel SO8FL
NTMFDCN Dual N-Channel Power MOSFET 3 V, High Side A / Low Side 7 A, Dual N Channel SOFL Features Co Packaged Power Stage Solution to Minimize Board Space Minimized Parasitic Inductances Optimized Devices
More informationFeatures 2.5 A, 30 V. R DS(ON) = 25 C unless otherwise note. Symbol Parameter Ratings Units. Drain-Source Voltage 30 V
FC5AN ual N-Channel Logic Level PowerTrench TM MOSFET General escription Features These N-Channel Logic Level MOSFETs are produced using ON Semiconductor's advanced PowerTrench process that has been especially
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More informationGeneral Description. Applications. Power management Load switch Q2 3 5 Q1
FDG6342L Integrated Load Switch Features Max r DS(on) = 150mΩ at V GS = 4.5V, I D = 1.5A Max r DS(on) = 195mΩ at V GS = 2.5V, I D = 1.3A Max r DS(on) = 280mΩ at V GS = 1.8V, I D = 1.1A Max r DS(on) = 480mΩ
More informationN-Channel 700-V (D-S) MOSFET
AMN7P N-Channel 7-V (D-S) MOSFET Key Features: Low r DS(on) trench technology Low thermal impedance Fast switching speed PRODUCT SUMMARY r DS(on) (Ω) ID (A) 7 @ V GS = V a VDS (V) Typical Applications:
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More informationFGH50T65SQD 650 V, 50 A Field Stop Trench IGBT
FGH5T65SQD 65 V, 5 A Field Stop Trench IGBT Features Maximum Junction Temperature : T J =75 o C Positive Temperaure Co-efficient for Easy Parallel Operating High Current Capability Low Saturation Voltage:
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More informationFGH40T100SMD 1000 V, 40 A Field Stop Trench IGBT
FGH4TSMD V, 4 A Field Stop Trench IGBT Features High Current Capability Low Saturation Voltage: V CE(sat) =.9 V(Typ.) @ I C = 4 A High Input Impedance Fast Switching RoHS Compliant Applications UPS, welder,
More informationP-Channel 60-V (D-S) MOSFET
AMP6-6B P-Channel 6-V (D-S) MOSFET Key Features: Low r DS(on) trench technology Low thermal impedance Fast switching speed VDS (V) -6 PRODUCT SUMMARY r DS(on) (mω) 6 @ V GS = -V 7 @ V GS = -4.5V ID(A)
More informationFQD2N90 / FQU2N90 N-Channel QFET MOSFET
FQD2N90 / FQU2N90 N-Channel QFET MOSFET 900 V, 1.7 A, 7.2 Ω Description This N-Channel enhancement mode power MOSFET is produced using ON Semiconductor s proprietary planar stripe and DMOS technology.
More informationN-Channel 100-V (D-S) MOSFET
AM744NA N-Channel -V (D-S) MOSFET Key Features: Low r DS(on) trench technology Low thermal impedance Fast switching speed VDS (V) PRODUCT SUMMARY r DS(on) (mω) 5 @ V GS = V 7 @ V GS = 4.5V ID (A) 5 4 Typical
More informationIRFM120 N-CHNNEL Electrical Characteristics (T =25% unless otherwise specified) Characteristic Min. Typ. Max. Units Test Condition BS Drain-Source Bre
dvanced Power MOSFET FETURES IEEE802.3af Compatible! valanche Rugged Technology! Rugged Gate Oxide Technology! Lower Input Capacitance! Improved Gate Charge! Extended Safe Operating rea! Lower Leakage
More informationP-Channel 20-V (D-S) MOSFET
AM3PE P-Channel -V (D-S) MOSFET Key Features: Low r DS(on) trench technology Low thermal impedance Fast switching speed VDS (V) - PRODUCT SUMMARY r DS(on) (mω) 8 @ V GS = -.5V @ V GS = -.5V ID (A) -5.6
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More informationN-Channel 30-V (D-S) MOSFET
AM734N N-Channel 3-V (D-S) MOSFET Key Features: Low r DS(on) trench technology Low thermal impedance Fast switching speed VDS (V) 3 PRODUCT SUMMARY r DS(on) (mω) @ V GS = V 3 @ V GS = 4.5V ID(A) 6 4 Typical
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NS3N N-Channel Logic Level Enhancement Mode Field Effect Transistor General escription These N-Channel logic level enhancement mode power field effect transistors are produced using ON Semiconductor's
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NTNS36NZ Small Signal MOSFET V, 36 ma, Single N Channel, SOT 883 (XDFN3). x.6 x. mm Package Features Single N Channel MOSFET Ultra Low Profile SOT 883 (XDFN3). x.6 x. mm for Extremely Thin Environments
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Power MOSFET 6 V, 2 A, 52 m Features Low R DS(on) Fast Switching These Devices are Pb Free and are RoHS Compliant Applications Load Switches DC Motor Control DC DC Conversion MAXIMUM RATINGS ( unless otherwise
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More informationNVLJD4007NZTBG. Small Signal MOSFET. 30 V, 245 ma, Dual, N Channel, Gate ESD Protection, 2x2 WDFN Package
NVLJD7NZ Small Signal MOSFET V, 2 ma, Dual, N Channel, Gate ESD Protection, 2x2 WDFN Package Features Optimized Layout for Excellent High Speed Signal Integrity Low Gate Charge for Fast Switching Small
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FGH12040WD 1200 V, 40 A Field Stop Trench IGBT Features Maximum Junction Temperature : T J = 175 o C Positive Temperature Co-efficient for Easy Parallel Operating Low Saturation Voltage: V CE(sat) = 2.3
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FGHT65SPD-F5 65V, A Field Stop Trench IGBT Features AEC-Q Qualified Low Saturation Voltage : V CE(sat) =.5 V(Typ.) @ I C = A % of the parts are dynamically tested (Note ) Short Circuit Ruggedness > 5 μs
More informationIs Now Part of. To learn more about ON Semiconductor, please visit our website at
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FGH40N60SFDTU-F085 600 V, 40 A Field Stop IGBT Features High Current Capability Low Saturation Voltage: V CE(sat) = 2.3 V @ I C = 40 A High Input Impedance Fast Switching RoHS Compliant Qualified to Automotive
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NTTFS582NL Power MOSFET 6 V, 37 A,.5 m Features Low R DS(on) Low Capacitance Optimized Gate Charge These Devices are Pb Free and are RoHS Compliant MAXIMUM RATINGS ( unless otherwise stated) Parameter
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J9 / MMBFJ8 N-Channel Switch Features This device is designed for digital switching applications where very low on resistance is mandatory. Sourced from process 8 J9 / MMBFJ8 N-Channel Switch 3 2 TO-92
More informationPacking Method. Symbol Parameter Test Conditions Min. Typ. Max. Unit V CE(sat) Saturation Voltage V C = 25 A, V GE = 15 V,
FGA25N2ANTDTU 2 V, 25 A NPT Trench IGBT Features NPT Trench Technology, Positive Temperature Coefficient Low Saturation Voltage: V CE(sat), typ = 2. V @ = 25 A and Low Switching Loss: E off, typ =.96 mj
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N-Channel -V (D-S) MOSFET Key Features: Low r DS(on) trench technology Low thermal impedance Fast switching speed VDS (V) PRODUCT SUMMARY r DS(on) (mω) @ V GS =.5V @ V GS =.5V ID(A) 7..5 Typical Applications:
More informationAM9435P. Analog Power P-Channel 30-V (D-S) MOSFET. PRODUCT SUMMARY V DS (V) r DS(on) m(ω) I D (A) V GS = -10V V GS = -4.5V -5.
P-Channel 3-V (D-S) MOSFET These miniature surface mount MOSFETs utilize High Cell Density process. Low r DS(on) assures minimal power loss and conserves energy, making this device ideal for use in power
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