Features -4 A, -30 V. R DS(ON) G 3. = 25 C unless otherwise note. Symbol Parameter Ratings Units. Drain-Source Voltage -30 V
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1 FC65P Single P-Channel, Logic Level, PowerTrench TM MOSFET General escription This P-Channel Logic Level MOSFET is produced using ON Semiconductor's advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain low gate charge for superior switching performance. These devices are well suited for notebook computer applications: load switching and power management, battery charging circuits, and C/C conversion. Features - A, - V. =.5 V GS = - V =.75 V GS = -.5 V. Low gate charge (nc typical). High performance trench technology for extremely low. SuperSOT TM -6 package: small footprint (7% smaller than standard SO-); low profile (mm thick). SOT- SuperSOT TM -6 SuperSOT TM - SO- SOT- SOIC-6 S TM SuperSOT -6 pin G Absolute Maximum Ratings T A = 5 C unless otherwise note Symbol Parameter Ratings Units V SS rain-source Voltage - V V GSS Gate-Source Voltage - Continuous ± V I rain Current - Continuous (Note a) - A - Pulsed - P Maximum Power issipation (Note a).6 W (Note b),t STG Operating and Storage Temperature Range -55 to 5 C THERMAL CHARACTERISTICS R θja Thermal Resistance, Junction-to-Ambient (Note a) 7 C/W R θjc Thermal Resistance, Junction-to-Case (Note ) C/W 999 Semiconductor Components, Industries, LLC. October-7, Rev. Publication Order Number: FC65P/
2 ELECTRICAL CHARACTERISTICS (T A = 5 C unless otherwise noted) Symbol Parameter Conditions Min Typ Max Units OFF CHARACTERISTICS BV SS rain-source Breakdown Voltage V GS = V, I = -5 µa - V BV SS / Breakdown Voltage Temp. Coefficient I = -5 µa, Referenced to 5 o C - mv/ o C I SS Zero Gate Voltage rain Current V S = - V, V GS = V - µa = 55 o C - µa I GSSF Gate - Body Leakage, Forward V GS = V, V S = V na I GSSR Gate - Body Leakage, Reverse V GS = - V, V S = V - na ON CHARACTERISTICS (Note ) V GS(th) Gate Threshold Voltage V S = V GS, I = -5 µa V V GS(th) / Gate Threshold VoltageTemp.Coefficient I = -5 µa, Referenced to 5 o C. mv/ o C Static rain-source On-Resistance V GS = - V, I = -. A..5 Ω = 5 o C.5. V GS = -.5 V, I = -. A.6.75 I (on) On-State rain Current V GS = - V, V S = -5 V - A g FS Forward Transconductance V S = -5V, I = - A 9 S YNAMIC CHARACTERISTICS C iss Input Capacitance V S = -5 V, V GS = V, 75 pf C oss Output Capacitance f =. MHz pf C rss Reverse Transfer Capacitance pf SWITCHING CHARACTERISTICS (Note ) t (on) Turn - On elay Time V = -5 V, I = - A, ns t r Turn - On Rise Time V GS = - V, R GEN = 6 Ω 5 ns t (off) Turn - Off elay Time ns t f Turn - Off Fall Time 6 7 ns Q g Total Gate Charge V S = -5 V, I = -. A, nc Q gs Gate-Source Charge V GS = -5 V. nc Q gd Gate-rain Charge nc RAIN-SOURCE IOE CHARACTERISTICS I S Continuous Source iode Current -. A V S rain-source iode Forward Voltage V GS = V, I S = -. A (Note ) V Notes:. R θja is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. R θjc is guaranteed by design while R θca is determined by the user's board design. a. 7 o C/W when mounted on a in pad of oz Cu on FR- board. b. 56 o C/W when mounted on a minimum pad of oz Cu on FR- board.. Pulse Test: Pulse Width < µs, uty Cycle <.%.
3 S Typical Electrical Characteristics - I, RAIN-SOURCE CURRENT (A) 6 V GS= -V -6.V -.5V -.V -.5V -.V R S(on), NORMALIZE RAIN-SOURCE ON-RESISTANCE..6.. V GS = -. V -.5V -5.V -6.V -.V -.V -V S, RAIN-SOURCE VOLTAGE (V) 6 - I, RAIN CURRENT (A) Figure. On-Region Characteristics. Figure. On-Resistance Variation with rain Current and Gate Voltage., NORMALIZE RAIN-SOURCE ON-RESISTANCE.6.. I = -A V GS= -V , JUNCTION TEMPERATURE ( C), ON-RESISTANCE (OHM).6... T = 5 C J T = 5 C J I = -A 6 -V GS, GATE TO SOURCE VOLTAGE (V) Figure. On-Resistance Variation with Temperature. Figure. On-Resistance Variation with Gate-to-Source Voltage. - I, RAIN CURRENT (A) 6 V = -5V S T = -55 C J 5 C 5 C -I, REVERSE RAIN CURRENT (A)... V GS= V T = 5 C J 5 C -55 C 5 6 -V GS, GATE TO SOURCE VOLTAGE (V) V S, BOY IOE FORWAR VOLTAGE (V) Figure 5. Transfer Characteristics. Figure 6. Body iode Forward Voltage Variation with Source Current and Temperature.
4 Typical Electrical Characteristics (continued) -V GS, GATE-SOURCE VOLTAGE (V) 6 I = -A V = -5V S -5V -V CAPACITANCE (pf) f = MHz V GS = V C iss C oss C rss Q g, GATE CHARGE (nc) V S, RAIN TO SOURCE VOLTAGE (V) Figure 7. Gate Charge Characteristics. Figure. Capacitance Characteristics. -I, RAIN CURRENT (A)... RS(ON) LIMIT V GS = -V SINGLE PULSE R θja = 56 C/W T A = 5 C s C ms ms ms -V S, RAIN-SOURCE VOLTAGE (V) us POWER (W) 5.. SINGLE PULSE TIME (SEC) SINGLE PULSE R θja=56 C/W T A = 5 C Figure 9. Maximum Safe Operating Area. Figure. Single Pulse Maximum Power issipation. r(t), NORMALIZE EFFECTIVE TRANSIENT THERMAL RESISTANCE = Single Pulse..... t, TIME (sec) P(pk) R θja (t) = r(t) * R θja R θja = 56 C/W t t - T A = P * R θja (t) uty Cycle, = t / t Figure. Transient Thermal Response Curve. Thermal characterization performed using the conditions described in Note b. Transient thermal response will change depending on the circuit board design.
5 ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor s product/patent coverage may be accessed at /site/pdf/patent Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by ON Semiconductor. Typical parameters which may be provided in ON Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including Typicals must be validated for each customer application by customer s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FA Class medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLICATION ORERING INFORMATION LITERATURE FULFILLMENT: Literature istribution Center for ON Semiconductor 95 E. nd Pkwy, Aurora, Colorado USA Phone: or 6 Toll Free USA/Canada Fax: or 67 Toll Free USA/Canada orderlit@onsemi.com Semiconductor Components Industries, LLC N. American Technical Support: 955 Toll Free USA/Canada Europe, Middle East and Africa Technical Support: Phone: 79 9 Japan Customer Focus Center Phone: 57 5 ON Semiconductor Website: Order Literature: For additional information, please contact your local Sales Representative
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