Features S 1. TA=25 o C unless otherwise noted

Transcription

1 FC5P V P-Channel Logic Level PowerTrench MOSFET FC5P General escription This V P-Channel MOSFET uses ON Semiconductor s high voltage PowerTrench process. It has been optimized for power management applications. Applications C-C converters Load switch Power management Features A, V. R S(ON) =.5 V GS = V R S(ON) =.5 V GS =.5 V Fast switching speed High performance trench technology for extremely low R S(ON) S TM SuperSOT - G 5 Absolute Maximum Ratings TA=5 o C unless otherwise noted Symbol Parameter Ratings Units V SS rain-source Voltage V V GSS Gate-Source Voltage ± V I rain Current Continuous (Note a) A Pulsed Maximum Power issipation (Note a). W P (Note b).8 T J, T STG Operating and Storage Junction Temperature Range 55 to +5 C Thermal Characteristics R θja Thermal Resistance, Junction-to-Ambient (Note a) 78 C/W R θjc Thermal Resistance, Junction-to-Case (Note ) C/W Package Marking and Ordering Information evice Marking evice Reel Size Tape width Quantity.5 FC5P 7 8mm units Semiconductor Components Industries, LLC. November-7, Rev. Publication Order Number: FC5P/

2 Electrical Characteristics T A = 5 C unless otherwise noted Symbol Parameter Test Conditions Min Typ Max Units Off Characteristics BV SS rain Source Breakdown Voltage V GS = V, I = 5 µa V BVSS Breakdown Voltage Temperature I = 5 µa, Referenced to 9 mv/ C T J Coefficient 5 C I SS Zero Gate Voltage rain Current V S = 8 V, V GS = V µa I GSSF Gate Body Leakage, Forward V GS = V, V S = V na I GSSR Gate Body Leakage, Reverse V GS = V V S = V na FC5P On Characteristics (Note ) V GS(th) Gate Threshold Voltage V S = V GS, I = 5 µa. V VGS(th) T J Gate Threshold Voltage Temperature Coefficient I = 5 µa,referenced to 5 C mv/ C R S(on) Static rain Source V GS = V, I = A 8 5 mω On Resistance V GS =.5 V, I =.7 A 5 5 V GS = V, I = A T J=5 C 9 I (on) On State rain Current V GS = V, V S = 5 V A g FS Forward Transconductance V S = 5 V, I = A 8 S ynamic Characteristics C iss Input Capacitance V S = V, V GS = V, 759 pf C oss Output Capacitance f =. MHz 9 pf Reverse Transfer Capacitance 9 pf C rss Switching Characteristics (Note ) t d(on) Turn On elay Time V = V, I = A, 7 ns t r Turn On Rise Time V GS = V, R GEN = Ω ns t d(off) Turn Off elay Time 9 ns t f Turn Off Fall Time ns Q g Total Gate Charge V S = V, I =. A, 5 nc Q gs Gate Source Charge V GS = V.5 nc Gate rain Charge. nc Q gd rain Source iode Characteristics and Maximum Ratings I S Maximum Continuous rain Source iode Forward Current. A V S rain Source iode Forward Voltage V GS = V, I S =. A (Note ).8. V Notes:. R θja is the sum of the junction-to-case and case-to-ambient resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. R θjc is guaranteed by design while R θca is determined by the user's board design. a. 78 C/W when mounted on a in pad of oz copper on FR- board. b. 5 C/W when mounted on a minimum pad.. Pulse Test: Pulse Width µs, uty Cycle.%

3 Typical Characteristics 5 V GS = -V -.5V -.V -.V -5.V -.5V 9 -.V -.5V 5 -VS, RAIN-SOURCE VOLTAGE (V) RS(ON), NORMALIZE RAIN-SOURCE ON-RESISTANCE V GS = -.5V -.V -.5V -5.V 8 -I, RAIN CURRENT (A) -.V -7.V -8.V -V FC5P Figure. On-Region Characteristics. Figure. On-Resistance Variation with rain Current and Gate Voltage I = -.A V GS = -V. I = -.5A.. TA = 5 o C.8.. TA = 5 o C TJ, JUNCTION TEMPERATURE ( o C) 8 -VGS, GATE TO SOURCE VOLTAGE (V) Figure. On-Resistance Variation with Temperature. Figure. On-Resistance Variation with Gate-to-Source Voltage. 5 VS = -5V TA = -55 o C 5 o C 5 o C VGS = V T A = 5 o C 9 5 o C. -55 o C. 5 -VGS, GATE TO SOURCE VOLTAGE (V) VS, BOY IOE FORWAR VOLTAGE (V) Figure 5. Transfer Characteristics. Figure. Body iode Forward Voltage Variation with Source Current and Temperature.

4 Typical Characteristics -VGS, GATE-SOURCE VOLTAGE (V) I = -.A VS = -V 8 -V -V 8 Qg, GATE CHARGE (nc) 8 CRSS C OSS C ISS 5 -VS, RAIN TO SOURCE VOLTAGE (V) f = MHz VGS = V FC5P Figure 7. Gate Charge Characteristics. Figure 8. Capacitance Characteristics. -I, RAIN CURRENT (A). RS(ON) LIMIT V GS = -V RθJA = 5 o C/W C µs ms ms s s RθJA = 5 C/W T A = 5 C TA = 5 o C.. -VS, RAIN-SOURCE VOLTAGE (V). t, TIME (sec) Figure 9. Maximum Safe Operating Area. Figure. Single Pulse Maximum Power issipation. = RθJA(t) = r(t) + RθJA RθJA = 5 C/W P(pk) t t..... t, TIME (sec) T J - T A = P * RθJA(t) uty Cycle, = t / t Figure. Transient Thermal Response Curve. Thermal characterization performed using the conditions described in Note b. Transient themal response will change depending on the circuit board design.

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