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1 Is Now Part of To learn more about ON Semiconductor, please visit our website at ON Semiconductor and the ON Semiconductor logo are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor s product/patent coverage may be accessed at ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by ON Semiconductor. Typical parameters which may be provided in ON Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including Typicals must be validated for each customer application by customer s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FA Class medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.
2 FC8 N-Channel Shielded Gate PowerTrench MOSFET 5 V,. A, mω Features Shielded Gate MOSFET Technology Max r S(on) = mω at V GS = V, I =. A Max r S(on) = 88 mω at V GS = V, I =.9 A High performance trench technology for extremely low r S(on) High power and current handling capability in a widely used surface mount package Fast switching speed % UIL Tested RoHS Compliant S General escription April 5 This N-Channel MOSFET is produced using Fairchild Semiconductor s advanced PowerTrench process that incorporates Shielded Gate technology. This process has been optimized for r S(on), switching performance and ruggedness. Applications Load Switch Synchronous Rectifier Primary Switch 5 G Pin SuperSOT TM - S G FC8 N-Channel Shielded Gate PowerTrench MOSFET MOSFET Maximum Ratings T A = 5 C unless otherwise noted Symbol Parameter Ratings Units V S rain to Source Voltage 5 V V GS Gate to Source Voltage ± V rain Current -Continuous (Note a). I -Pulsed E AS Single Pulse Avalanche Energy (Note ) mj Power issipation (Note a). P Power issipation (Note b).8 T J, T STG Operating and Storage Junction Temperature Range -55 to +5 C Thermal Characteristics A W R θjc Thermal Resistance, Junction to Case R θja Thermal Resistance, Junction to Ambient (Note a) 78 Package Marking and Ordering Information C/W evice Marking evice Package Reel Size Tape Width Quantity. FC8 SSOT- 7 8 mm units Fairchild Semiconductor Corporation FC8 Rev..
3 Electrical Characteristics T J = 5 C unless otherwise noted Symbol Parameter Test Conditions Min Typ Max Units Off Characteristics BV SS rain to Source Breakdown Voltage I = 5 μa, V GS = V 5 V ΔBV SS Breakdown Voltage Temperature ΔT J Coefficient I = 5 μa, referenced to 5 C mv/ C I SS Zero Gate Voltage rain Current V S = V, V GS = V μa I GSS Gate to Source Leakage Current V GS = ± V, V S = V ± na On Characteristics V GS(th) Gate to Source Threshold Voltage V GS = V S, I = 5 μa..5. V ΔV GS(th) ΔT J Gate to Source Threshold Voltage Temperature Coefficient I = 5 μa, referenced to 5 C -9 mv/ C V GS = V, I =. A r S(on) Static rain to Source On Resistance V GS = V, I =.9 A 8 88 mω V GS = V, I =. A, T J = 5 C 7 g FS Forward Transconductance V = 5 V, I =. A S ynamic Characteristics C iss Input Capacitance 5 pf V S = 75 V, V GS = V, C oss Output Capacitance 5 pf f = MHz C rss Reverse Transfer Capacitance.7 5 pf R g Gate Resistance. Ω Switching Characteristics t d(on) Turn-On elay Time.7 ns t r Rise Time V = 75 V, I =. A,. ns t d(off) Turn-Off elay Time V GS = V, R GEN = Ω ns t f Fall Time. ns Total Gate Charge V GS = V to V. nc Q g(tot) Total Gate Charge V GS = V to 5 V V = 75 V. nc Q gs Total Gate Charge I =. A. nc Q gd Gate to rain Miller Charge. nc FC8 N-Channel Shielded Gate Power Trench MOSFET rain-source iode Characteristics V S Source to rain iode Forward Voltage V GS = V, I S =. A (Note ).8. V t rr Reverse Recovery Time 5 7 ns I F =. A, di/dt = A/μs Q rr Reverse Recovery Charge 5 nc NOTES:. R θja is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. R θjc is guaranteed by design while R θca is determined by the user's board design. a. 78 C/W when mounted on a in pad of oz copper b.75 C/W when mounted on a minimum pad of oz copper SS SF S F G. Pulse Test: Pulse Width < μs, uty cycle <. %.. Starting T J = 5 o C, L =. mh, I AS = 5. A, V = 5 V, V GS = V. SS SF S F G Fairchild Semiconductor Corporation FC8 Rev..
4 Typical Characteristics T J = 5 C unless otherwise noted I, RAIN CURRENT (A) NORMALIZE RAIN TO SOURCE ON-RESISTANCE 8 5 V S, RAIN TO SOURCE VOLTAGE (V) Figure. I =. A V GS = V V GS = V V GS = V PULSE URATION = 8 μs UTY CYCLE =.5% MAX V GS = 5 V V GS =.5 V V GS = V NORMALIZE RAIN TO SOURCE ON-RESISTANCE V PULSE URATION = 8 μs GS = V UTY CYCLE =.5% MAX 8 I, RAIN CURRENT (A) On-Region Characteristics Figure. Normalized On-Resistance vs rain Current and Gate Voltage T J, JUNCTION TEMPERATURE ( o C) rs(on), RAIN TO SOURCE ON-RESISTANCE (mω) 5 5 V GS = V T J = 5 o C V GS =.5 V I =. A T J = 5 o C V GS = 5 V V GS = V PULSE URATION = 8 μs UTY CYCLE =.5% MAX 8 V GS, GATE TO SOURCE VOLTAGE (V) FC8 N-Channel Shielded Gate Power Trench MOSFET Figure. Normalized On- Resistance vs Junction Temperature Figure. On-Resistance vs Gate to Source Voltage I, RAIN CURRENT (A) 8 PULSE URATION = 8 μs UTY CYCLE =.5% MAX V S = 5 V T J = 5 o C T J = 5 o C T J = -55 o C IS, REVERSE RAIN CURRENT (A).. V GS = V T J = 5 o C T J = -55 o C T J = 5 o C 5 V GS, GATE TO SOURCE VOLTAGE (V) Figure 5. Transfer Characteristics V S, BOY IOE FORWAR VOLTAGE (V) Figure. Source to rain iode Forward Voltage vs Source Current Fairchild Semiconductor Corporation FC8 Rev..
5 Typical Characteristics T J = 5 C unless otherwise noted VGS, GATE TO SOURCE VOLTAGE (V) IAS, AVALANCHE CURRENT (A) 8 I =. A 5 Q g, GATE CHARGE (nc) Figure V = 75 V V = 5 V V = V f = MHz V GS = V C rss. V S, RAIN TO SOURCE VOLTAGE (V) Gate Charge Characteristics Figure 8. Capacitance vs rain to Source Voltage T J = 5 o C T J = 5 o C T J = o C.. t AV, TIME IN AVALANCHE (ms) CAPACITANCE (pf) I, RAIN CURRENT (A) R θja = 78 o C/W V GS = V V GS = V C iss C oss T A, AMBIENT TEMPERATURE ( o C) FC8 N-Channel Shielded Gate Power Trench MOSFET Figure 9. Unclamped Inductive Switching Capability Figure. Maximum Continuous rain Current vs Ambient Temperature I, RAIN CURRENT (A) us ms. THIS AREA IS LIMITE BY r S(on) ms ms SINGLE PULSE s. T J = MAX RATE s R θja = 75 o C/W C T A = 5 o C.. 5 V S, RAIN to SOURCE VOLTAGE (V) P(PK), PEAK TRANSIENT POWER (W) SINGLE PULSE R θja = 75 o C/W T A = 5 o C t, PULSE WITH (sec) Figure. Forward Bias Safe Operating Area Figure. Single Pulse Maximum Power issipation Fairchild Semiconductor Corporation FC8 Rev..
6 Typical Characteristics T J = 5 C unless otherwise noted NORMALIZE THERMAL IMPEANCE, Z θja.. UTY CYCLE-ESCENING ORER = SINGLE PULSE R θja = 75 o C/W t, RECTANGULAR PULSE URATION (sec) Figure. Juncton-to-Ambient Transient Thermal Response Curve P M t t NOTES: UTY FACTOR: = t /t PEAK T J = P M x Z θja x R θja + T A FC8 N-Channel Shielded Gate Power Trench MOSFET Fairchild Semiconductor Corporation FC8 Rev.. 5
7 SYMM C L C..8 A B. MIN.7.5 C... (.) M A B. MAX.7 MIN LAN PATTERN RECOMMENATION SEE ETAIL A..7 H.. C. C..8 NOTES: UNLESS OTHERWISE SPECIFIE A) THIS PACKAGE CONFORMS TO JEEC MO-9. VAR. AA, ISSUE E. B) ALL IMENSIONS ARE IN MILLIMETERS REF GAGE PLANE.5 SEATING PLANE C PACKAGE LENGTH OES NOT INCLUE MOL FLASH, PROTRUSIONS OR GATE BURRS. MOL FLASH, PROTRUSIONS OR GATE BURRS SHALL NOT EXCEE.5mm PER EN. PACKAGE WITH OES NOT INCLUE INTERLEA FLASH OR PROTRUSION. INTERLEA FLASH OR PROTRUSION SHALL NOT EXCEE.5mm PER SIE. PACKAGE LENGTH AN WITH IMENSIONS ARE ETERMINE AT ATUM H. ) RAWING FILE NAME: MKT-MAAREVF ETAIL A SCALE: 5X
8 ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor s product/patent coverage may be accessed at Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by ON Semiconductor. Typical parameters which may be provided in ON Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including Typicals must be validated for each customer application by customer s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FA Class medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLICATION ORERING INFORMATION LITERATURE FULFILLMENT: Literature istribution Center for ON Semiconductor 95 E. nd Pkwy, Aurora, Colorado 8 USA Phone: or 8 8 Toll Free USA/Canada Fax: 75 7 or 8 87 Toll Free USA/Canada orderlit@onsemi.com Semiconductor Components Industries, LLC N. American Technical Support: Toll Free USA/Canada Europe, Middle East and Africa Technical Support: Phone: 79 9 Japan Customer Focus Center Phone: ON Semiconductor Website: Order Literature: For additional information, please contact your local Sales Representative
9 Mouser Electronics Authorized istributor Click to View Pricing, Inventory, elivery & Lifecycle Information: Fairchild Semiconductor: FC8
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More informationIs Now Part of To learn more about ON Semiconductor, please visit our website at
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More informationIs Now Part of To learn more about ON Semiconductor, please visit our website at
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FQD8P10TM-F085 100V P-Channel MOSFET General Description These P-Channel enhancement mode power field effect transistors are produced using ON Semiconductor s proprietary, planar stripe, DMOS technology.
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FCH04N65EF N-Channel SuperFET II FRFET MOSFET 650 V, 76 A, 4 mω Features 700 V @ T J = 50 C Typ. R DS(on) = 36 mω Ultra Low Gate Charge (Typ. Q g = 229 nc) Low Effective Output Capacitance (Typ. C oss(eff.)
More informationFDPF18N20FT-G N-Channel UniFET TM FRFET MOSFET
FDPF8N20FT-G N-Channel UniFET TM FRFET MOSFET 200 V, 8 A, 40 m Features R DS(on) = 29 mω (Typ.) @ V GS = 0 V, I D = 9 A Low Gate Charge (Typ. 20 nc) Low C rss (Typ. 24 pf) 00% Avalanche Tested Improve
More informationElerical Characteristics T C = 5 C unless otherwise noted Symbol Parameter Test Conditions Min Typ Max Unit Off Characteristics BS Drain-Source Breakd
FQD3P50 P-Channel QFET MOSFET - 500 V, -.1 A, 4.9 Ω Description This P-Channel enhancement mode power MOSFET is produced using ON Semiconductor s proprietary planar stripe and DMOS technology. This advanced
More informationNVMFS5C646NL. Power MOSFET 60 V, 4.7 m, 93 A, Single N Channel
Power MOSFET 6 V,.7 m, 93 A, Single N Channel Features Small Footprint (x6 mm) for Compact esign Low R S(on) to Minimize Conduction Losses Low Q G and Capacitance to Minimize river Losses WF Wettable Flank
More informationDescription. - Derate above 25 C 0.39 W/ C T J, T STG Operating and Storage Temperature Range -55 to +150 C
FQD5N60C / FQU5N60C N-Channel QFET MOSFET 600 V,.8 A,.5 Ω Features.8 A, 600 V, R DS(on) =.5 Ω (Max.) @ = 10 V, = 1.4 A Low Gate Charge ( Typ. 15 nc) Low Crss (Typ. 6.5 pf) 100% Avalanche Tested RoHS compliant
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More informationDescription TO-3PN. Symbol Parameter FCA76N60N Unit V DSS Drain to Source Voltage 600 V V GSS Gate to Source Voltage ±30 V
FCA76N60N N-Channel SupreMOS MOSFET 600 V, 76 A, 36 mω Features R DS(on) = 28 mω (Typ. ) @ V GS = 0 V, I D = 38 A Ultra Low Gate Charge (Typ. Q g = 28 nc) Low Effective Output Capacitance (Typ. C oss(eff.)
More informationFDP085N10A N-Channel PowerTrench MOSFET
FDP085NA N-Channel PowerTrench MOSFET 0 V, 96 A, 8.5 mω Features R DS(on) = 7.35 mω (Typ.) @ V GS = V, I D = 96 A Fast Switching Speed Low Gate Charge, Q G = 3 nc (Typ.) High Performance Trench Technology
More informationSept 2017 FCA47N60F N-Channel SuperFET FRFET MOSFET. Description TO-3PN
FCA47N60F N-Channel SuperFET FRFET MOSFET 600 V, 47 A, 73 mω Features 650 V @ T J = 150 C Typ. R DS(on) = 62 mω Fast Recovery Time (Typ. T rr = 240 ns) Ultra Low Gate Charge (Typ. Q g = 210 nc) Low Effective
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More informationFDS6986AS Dual Notebook Power Supply N-Channel PowerTrench SyncFET
FDS9AS Dual Notebook Power Supply N-Channel PowerTrench SyncFET General Description The FDS9AS is designed to replace two single SO- MOSFETs and Schottky diode in synchronous DC:DC power supplies that
More informationIs Now Part of To learn more about ON Semiconductor, please visit our website at
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More informationNTR4170NT3G. Power MOSFET. 30 V, 3.1 A, Single N Channel, SOT 23
NTR47N Power MOSFET V,. A, Single N Channel, SOT Features Low R S(on) Low Gate Charge Low Threshold Voltage Halide Free This is a Pb Free evice Applications Power Converters for Portables Battery Management
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More informationDescription. Symbol Parameter FCMT180N65S3 Unit V DSS Drain to Source Voltage 650 V. - Continuous (T C = 25 o C) 17 - Continuous (T C = 100 o C) 11
FCMT80N65S3 N-Channel SUPERFET III Easy-Drive MOSFET 650 V, 7 A, 80 mω Features 700 V @ T J = 50 o C Typ. R DS(on) = 52 mω Ultra Low Gate Charge (Typ. Q g = 33 nc) Low Effective Output Capacitance (Typ.
More informationNTMFD4C20N. Dual N-Channel Power MOSFET. 30 V, High Side 18 A / Low Side 27 A, Dual N Channel SO8FL
NTMFDCN Dual N-Channel Power MOSFET 3 V, High Side A / Low Side 7 A, Dual N Channel SOFL Features Co Packaged Power Stage Solution to Minimize Board Space Minimized Parasitic Inductances Optimized Devices
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More informationFDH055N15A N-Channel PowerTrench MOSFET 150 V, 167 A, 5.9 mω Features
FDH055N15A N-Channel PowerTrench MOSFET 150 V, 167 A, 5.9 mω Features R DS(on) = 4.8 mω (Typ.) @ V GS = V, I D = 120 A Fast Switching Speed Low Gate Charge High Performance Trench Technology for Extremely
More informationDescription. Symbol Parameter FCP260N65S3 Unit V DSS Drain to Source Voltage 650 V
FCP260N65S3 N-Channel SuperFET III MOSFET 650 V, 2 A, 260 mω Features 700 V @ T J = 50 o C Typ. R DS(on) = 222 mω Ultra Low Gate Charge (Typ. Q g = 24 nc) Low Effective Output Capacitance (Typ. C oss(eff.)
More informationFDH50N50 / FDA50N50 N-Channel UniFET TM MOSFET 500 V, 48 A, 105 mω Features
FDH5N5 / FDA5N5 N-Channel UniFET TM MOSFET 5 V, 48 A, 15 mω Features R DS(on) = 89 mω (Typ.) @ = 1 V, = 24 A Low Gate Charge (Typ. 15 nc) Low C rss (Typ. 45 pf) 1% Avalanche Tested Improved dv/dt Capability
More informationNTNS3164NZT5G. Small Signal MOSFET. 20 V, 361 ma, Single N Channel, SOT 883 (XDFN3) 1.0 x 0.6 x 0.4 mm Package
NTNS36NZ Small Signal MOSFET V, 36 ma, Single N Channel, SOT 883 (XDFN3). x.6 x. mm Package Features Single N Channel MOSFET Ultra Low Profile SOT 883 (XDFN3). x.6 x. mm for Extremely Thin Environments
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More informationGeneral Description. Applications. Power management Load switch Q2 3 5 Q1
FDG6342L Integrated Load Switch Features Max r DS(on) = 150mΩ at V GS = 4.5V, I D = 1.5A Max r DS(on) = 195mΩ at V GS = 2.5V, I D = 1.3A Max r DS(on) = 280mΩ at V GS = 1.8V, I D = 1.1A Max r DS(on) = 480mΩ
More informationFCH023N65S3. Power MOSFET, N-Channel, SUPERFET III, Easy Drive, 650 V, 75 A, 23 m
Power MOSFET, N-Channel, SUPERFET III, Easy Drive, 65 V, 75 A, 23 m Description SUPERFET III MOSFET is ON Semiconductor s brand new high voltage super junction (SJ) MOSFET family that is utilizing charge
More informationFCH190N65F-F085 N-Channel SuperFET II FRFET MOSFET
FCH9N65F-F85 N-Channel SuperFET II FRFET MOSFET 65 V, 2.6 A, 9 mω Features Typical R DS(on) = 48 mω at = V, I D = A Typical Q g(tot) = 63 nc at = V, I D = A UIS Capability Qualified to AEC Q RoHS Compliant
More informationN-Channel SuperFET II FRFET MOSFET
FCH077N65F N-Channel SuperFET II FRFET MOSFET 650 V, 54 A, 77 mω Features 700 V @ T J = 50 C Typ. R DS(on) = 68 mω Ultra Low Gate Charge (Typ. Q g = 26 nc) Low Effective Output Capacitance (Typ. C oss(eff.)
More informationNTJS3151P. Trench Power MOSFET. 12 V, 3.3 A, Single P Channel, ESD Protected SC 88
NTJS5P Trench Power MOSFET V,. A, Single P Channel, ES Protected SC 88 Features Leading Trench Technology for Low R S(ON) Extending Battery Life SC 88 Small Outline (x mm, SC7 Equivalent) Gate iodes for
More informationFGH12040WD 1200 V, 40 A Field Stop Trench IGBT
FGH12040WD 1200 V, 40 A Field Stop Trench IGBT Features Maximum Junction Temperature : T J = 175 o C Positive Temperature Co-efficient for Easy Parallel Operating Low Saturation Voltage: V CE(sat) = 2.3
More informationAbsolute Maximum Ratings T C = 25 o C, Unless Otherwise Specified BUZ11 Drain to Source Breakdown Voltage (Note 1)
Data Sheet September 213 File Number 2253.2 N-Channel Power MOSFET 5V, 3A, 4 mω This is an N-Channel enhancement mode silicon gate power field effect transistor designed for applications such as switching
More informationIs Now Part of. To learn more about ON Semiconductor, please visit our website at
Is Now Part of To learn more about ON emiconductor, please visit our website at www.onsemi.com Please note: As part of the Fairchild emiconductor integration, some of the Fairchild orderable part numbers
More informationNTD5865NL. N-Channel Power MOSFET 60 V, 46 A, 16 m
N-Channel Power MOSFET 6 V, 6 A, 6 m Features Low Gate Charge Fast Switching High Current Capability % Avalanche Tested These Devices are Pb Free, Halogen Free and are RoHS Compliant MAXIMUM RATINGS (
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More informationNTK3139P. Power MOSFET. 20 V, 780 ma, Single P Channel with ESD Protection, SOT 723
NTK9P Power MOSFET V, 78 ma, Single P Channel with ESD Protection, SOT 7 Features P channel Switch with Low R DS(on) % Smaller Footprint and 8% Thinner than SC 89 Low Threshold Levels Allowing.5 V R DS(on)
More informationNTTFS5116PLTWG. Power MOSFET 60 V, 20 A, 52 m. Low R DS(on) Fast Switching These Devices are Pb Free and are RoHS Compliant
Power MOSFET 6 V, 2 A, 52 m Features Low R DS(on) Fast Switching These Devices are Pb Free and are RoHS Compliant Applications Load Switches DC Motor Control DC DC Conversion MAXIMUM RATINGS ( unless otherwise
More informationJ109 / MMBFJ108 N-Channel Switch
J9 / MMBFJ8 N-Channel Switch Features This device is designed for digital switching applications where very low on resistance is mandatory. Sourced from process 8 J9 / MMBFJ8 N-Channel Switch 3 2 TO-92
More informationFCMT099N65S3. Power MOSFET, N-Channel, SUPERFET III, Easy Drive, 650 V, 30 A, 99 m
Power MOSFET, N-Channel, SUPERFET III, Easy Drive, 650 V, 30 A, 99 m Description SUPERFET III MOSFET is ON Semiconductor s brand new high voltage super junction (SJ) MOSFET family that is utilizing charge
More informationNTTFS5820NLTWG. Power MOSFET. 60 V, 37 A, 11.5 m. Low R DS(on) Low Capacitance Optimized Gate Charge These Devices are Pb Free and are RoHS Compliant
NTTFS582NL Power MOSFET 6 V, 37 A,.5 m Features Low R DS(on) Low Capacitance Optimized Gate Charge These Devices are Pb Free and are RoHS Compliant MAXIMUM RATINGS ( unless otherwise stated) Parameter
More informationFGH40T100SMD 1000 V, 40 A Field Stop Trench IGBT
FGH4TSMD V, 4 A Field Stop Trench IGBT Features High Current Capability Low Saturation Voltage: V CE(sat) =.9 V(Typ.) @ I C = 4 A High Input Impedance Fast Switching RoHS Compliant Applications UPS, welder,
More informationFCPF165N65S3L1. Power MOSFET, N-Channel, SUPERFET III, Easy Drive, 650 V, 19 A, 165 m
Power MOSFET, N-Channel, SUPERFET III, Easy Drive, 650 V, 9 A, 65 m Description SUPERFET III MOSFET is ON Semiconductor s brand new high voltage super junction (SJ) MOSFET family that is utilizing charge
More informationNCV8440, NCV8440A. Protected Power MOSFET. 2.6 A, 52 V, N Channel, Logic Level, Clamped MOSFET w/ ESD Protection
Protected Power MOSFET 2.6 A, 52 V, N Channel, Logic Level, Clamped MOSFET w/ ESD Protection Features Diode Clamp Between Gate and Source ESD Protection Human Body Model 5 V Active Over Voltage Gate to
More informationIs Now Part of. To learn more about ON Semiconductor, please visit our website at
Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers
More informationNTD5867NL. N-Channel Power MOSFET 60 V, 20 A, 39 m
N-Channel Power MOSFET 6 V, A, 39 m Features Low R DS(on) High Current Capability % Avalanche Tested These Devices are Pb Free, Halogen Free/BFR Free and are RoHS Compliant MAXIMUM RATINGS ( unless otherwise
More informationNTP082N65S3F. Power MOSFET, N-Channel, SUPERFET III, FRFET, 650 V, 40 A, 82 m
Power MOSFET, N-Channel, SUPERFET III, FRFET, 650 V, 40 A, 82 m Description SUPERFET III MOSFET is ON Semiconductor s brand new high voltage super junction (SJ) MOSFET family that is utilizing charge balance
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NTTFS3A8PZ Power MOSFET V, 5 A, Single P Channel, 8FL Features Ultra Low R DS(on) to Minimize Conduction Losses 8FL 3.3 x 3.3 x.8 mm for Space Saving and Excellent Thermal Conduction ESD Protection Level
More information650V, 40A Field Stop Trench IGBT
FGHT65SPD-F5 65V, A Field Stop Trench IGBT Features AEC-Q Qualified Low Saturation Voltage : V CE(sat) =.5 V(Typ.) @ I C = A % of the parts are dynamically tested (Note ) Short Circuit Ruggedness > 5 μs
More informationNVLJD4007NZTBG. Small Signal MOSFET. 30 V, 245 ma, Dual, N Channel, Gate ESD Protection, 2x2 WDFN Package
NVLJD7NZ Small Signal MOSFET V, 2 ma, Dual, N Channel, Gate ESD Protection, 2x2 WDFN Package Features Optimized Layout for Excellent High Speed Signal Integrity Low Gate Charge for Fast Switching Small
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