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1 Is Now Part of To learn more about ON emiconductor, please visit our website at ON emiconductor and the ON emiconductor logo are trademarks of emiconductor Components Industries, LLC dba ON emiconductor or its subsidiaries in the United tates and/or other countries. ON emiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON emiconductor s product/patent coverage may be accessed at ON emiconductor reserves the right to make changes without further notice to any products herein. ON emiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON emiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using ON emiconductor products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by ON emiconductor. Typical parameters which may be provided in ON emiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including Typicals must be validated for each customer application by customer s technical experts. ON emiconductor does not convey any license under its patent rights nor the rights of others. ON emiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. hould Buyer purchase or use ON emiconductor products for any such unintended or unauthorized application, Buyer shall indemnify and hold ON emiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ON emiconductor was negligent regarding the design or manufacture of the part. ON emiconductor is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.
2 FM766 N-Channel PowerTrench MOFET 3 V,.8 mω Features Max r (on) =.8 mω at V G = V, I = 5 A Max r (on) = 3.5 mω at V G =.5 V, I = 9 A Advanced Package and ilicon combination for low r (on) and high efficiency Next generation enhanced body diode technology, engineered for soft recovery. Provides chottky-like performance with minimum EMI in sync buck converter applications ML robust package design % UIL tested RoH Compliant General escription April 9 This N-Channel MOFET has been designed specifically to improve the overall efficiency and to minimize switch node ringing of C/C converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low r (on), fast switching speed and body diode reverse recovery performance. Applications IMVP Vcore witching for Notebook VRM Vcore witching for esktop and erver OringFET / Load witch C-C Conversion FM766 N-Channel PowerTrench MOFET Top Bottom Pin 5 G G Power 56 MOFET Maximum Ratings T A = 5 C unless otherwise noted ymbol Parameter Ratings Units V rain to ource Voltage 3 V V G Gate to ource Voltage (Note ) ± V rain Current -Continuous (Package limited) T C = 5 C I -Continuous (ilicon limited) T C = 5 C -Continuous T A = 5 C (Note a) 5 A -Pulsed 5 E A ingle Pulse Avalanche Energy (Note 3) 8 mj Power issipation T C = 5 C 78 P Power issipation T A = 5 C (Note a).5 W T J, T TG Operating and torage Junction Temperature Range -55 to +5 C Thermal Characteristics R θjc Thermal Resistance, Junction to Case.6 R θja Thermal Resistance, Junction to Ambient (Note a) 5 Package Marking and Ordering Information C/W evice Marking evice Package Reel ize Tape Width Quantity FM766 FM766 Power 56 3 mm 3 units 9 Fairchild emiconductor Corporation FM766 Rev.
3 Electrical Characteristics T J = 5 C unless otherwise noted ymbol Parameter Test Conditions Min Typ Max Units Off Characteristics BV rain to ource Breakdown Voltage I = 5 µa, V G = V 3 V BV Breakdown Voltage Temperature T J Coefficient I = 5 µa, referenced to 5 C 7 mv/ C I Zero Gate Voltage rain Current V = V, V G = V µa I G Gate to ource Leakage Current, Forward V G = V, V = V na On Characteristics V G(th) Gate to ource Threshold Voltage V G = V, I = 5 µa V V G(th) T J Gate to ource Threshold Voltage Temperature Coefficient I = 5 µa, referenced to 5 C -7 mv/ C V G = V, I = 5 A.9.8 r (on) tatic rain to ource On Resistance V G =.5 V, I = 9 A mω V G = V, I = 5 A, T J = 5 C g F Forward Transconductance V = 5 V, I = 5 A 5 ynamic Characteristics C iss Input Capacitance pf V = 5 V, V G = V, C oss Output Capacitance pf f = MHz C rss Reverse Transfer Capacitance 5 9 pf R g Gate Resistance.9. Ω FM766 N-Channel PowerTrench MOFET witching Characteristics t d(on) Turn-On elay Time 7 3 ns t r Rise Time V = 5 V, I = 5A, 9 8 ns t d(off) Turn-Off elay Time V G = V, R GEN = 6 Ω 37 6 ns t f Fall Time 7 3 ns Q g Total Gate Charge V G = V to V 6 8 nc Q g Total Gate Charge V G = V to.5 V V = 5 V, 7 38 nc Q gs Gate to ource Charge I = 5 A.3 nc Q gd Gate to rain Miller Charge 7. nc rain-ource iode Characteristics V ource to rain iode Forward Voltage V G = V, I =. A (Note ).7.95 V G = V, I = 5 A (Note ).8. V t rr Reverse Recovery Time 6 7 ns Q rr Reverse Recovery Charge 6 nc t a Reverse Recovery Fall Time I F = 5 A, di/dt = A/µs 9 nc t b Reverse Recovery Rise Time 7 nc oftness (t b /t a ). t rr Reverse Recovery Time ns I F = 5 A, di/dt = 3 A/µs Q rr Reverse Recovery Charge 3 68 nc Notes:. R θja is determined with the device mounted on a in pad oz copper pad on a.5 x.5 in. board of FR- material. R θjc is guaranteed by design while R θca is determined by the user's board design. a. 5 C/W when mounted on a in pad of oz copper. b. 5 C/W when mounted on a minimum pad of oz copper.. Pulse Test: Pulse Width < 3 µs, uty cycle <.%. 3. E A of 8 mj is based on starting T J = 5 C, L = mh, I A = 6 A, V = 7 V, V G = V. % test at L =.3 mh, I A = 3 A.. As an N-ch device, the negative Vgs rating is for low duty cycle pulse occurrence only. No continuous rating is implied. 9 Fairchild emiconductor Corporation FM766 Rev.
4 Typical Characteristics T J = 5 C unless otherwise noted I, RAIN CURRENT (A) NORMALIZE RAIN TO OURCE ON-REITANCE Figure. I = 5 A V G = V V G = V V G =.5 V V G = V V G = 3.5 V PULE URATION = 8 µs UTY CYCLE =.5% MAX V, RAIN TO OURCE VOLTAGE (V) V G = 3 V NORMALIZE RAIN TO OURCE ON-REITANCE On-Region Characteristics Figure. Normalized On-Resistance vs rain Current and Gate Voltage T J, JUNCTION TEMPERATURE ( o C) r(on), RAIN TO OURCE ON-REITANCE (mω) V G = 3 V V G = 3.5 V V G = V I, RAIN CURRENT (A) T J = 5 o C PULE URATION = 8 µs UTY CYCLE =.5% MAX I = 5 A V G =.5 V V G = V PULE URATION = 8 µs UTY CYCLE =.5% MAX T J = 5 o C 6 8 V G, GATE TO OURCE VOLTAGE (V) FM766 N-Channel PowerTrench MOFET Figure 3. Normalized On- Resistance vs Junction Temperature Figure. On-Resistance vs Gate to ource Voltage I, RAIN CURRENT (A) PULE URATION = 8 µs UTY CYCLE =.5% MAX V = 5 V T J = 5 o C T J = 5 o C T J = -55 o C 3 5 V G, GATE TO OURCE VOLTAGE (V) Figure 5. Transfer Characteristics I, REVERE RAIN CURRENT (A) V G = V T J = 5 o C T J = 5 o C T J = -55 o C V, BOY IOE FORWAR VOLTAGE (V) Figure 6. ource to rain iode Forward Voltage vs ource Current 9 Fairchild emiconductor Corporation FM766 Rev. 3
5 Typical Characteristics T J = 5 C unless otherwise noted VG, GATE TO OURCE VOLTAGE (V) 8 6 I = 5 A Figure 7. V = V V = 5 V V = V Q g, GATE CHARGE (nc) f = MHz V G = V. 3 V, RAIN TO OURCE VOLTAGE (V) Gate Charge Characteristics Figure 8. Capacitance vs rain to ource Voltage CAPACITANCE (pf) 5 C iss C oss C rss FM766 N-Channel PowerTrench MOFET IA, AVALANCHE CURRENT (A) T J = 5 o C T J = 5 o C T J = o C I, RAIN CURRENT (A) V G =.5 V Limited by Package V G = V R θjc =.6 o C/W.. t AV, TIME IN AVALANCHE (ms) T c, CAE TEMPERATURE ( o C) Figure 9. Unclamped Inductive witching Capability Figure. Maximum Continuous rain Current vs Case Temperature I, RAIN CURRENT (A) 5 THI AREA I LIMITE BY r ms (on) ms INGLE PULE s. T J = MAX RATE R s θja = 5 o C/W C T A = 5 o C... V, RAIN to OURCE VOLTAGE (V) Figure. Forward Bias afe Operating Area us ms P(PK), PEAK TRANIENT POWER (W) V G = V INGLE PULE R θja = 5 o C/W T A = 5 o C t, PULE WITH (sec) Figure. ingle Pulse Maximum Power issipation 9 Fairchild emiconductor Corporation FM766 Rev.
6 Typical Characteristics T J = 5 C unless otherwise noted NORMALIZE THERMAL IMPEANCE, Z θja... UTY CYCLE-ECENING ORER = INGLE PULE R θja = 5 o C/W t, RECTANGULAR PULE URATION (sec) 3 5 Figure 3. Junction-to-Ambient Transient Thermal Response Curve P M t t NOTE: UTY FACTOR: = t /t PEAK T J = P M x Z θja x R θja + T A Figure 5. FM766 N-Channel PowerTrench MOFET CURRENT (A) 5 5 di/dt = 3 A/µs TIME (ns) Figure. Body iode Reverse Recovery Characteristics 9 Fairchild emiconductor Corporation FM766 Rev. 5
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8 ON emiconductor and are trademarks of emiconductor Components Industries, LLC dba ON emiconductor or its subsidiaries in the United tates and/or other countries. ON emiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON emiconductor s product/patent coverage may be accessed at Marking.pdf. ON emiconductor reserves the right to make changes without further notice to any products herein. ON emiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON emiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using ON emiconductor products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by ON emiconductor. Typical parameters which may be provided in ON emiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including Typicals must be validated for each customer application by customer s technical experts. ON emiconductor does not convey any license under its patent rights nor the rights of others. ON emiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. hould Buyer purchase or use ON emiconductor products for any such unintended or unauthorized application, Buyer shall indemnify and hold ON emiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ON emiconductor was negligent regarding the design or manufacture of the part. ON emiconductor is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLICATION ORERING INFORMATION LITERATURE FULFILLMENT: Literature istribution Center for ON emiconductor 95 E. 3nd Pkwy, Aurora, Colorado 8 UA Phone: or Toll Free UA/Canada Fax: or Toll Free UA/Canada orderlit@onsemi.com emiconductor Components Industries, LLC N. American Technical upport: Toll Free UA/Canada Europe, Middle East and Africa Technical upport: Phone: Japan Customer Focus Center Phone: ON emiconductor Website: Order Literature: For additional information, please contact your local ales Representative
9 Mouser Electronics Authorized istributor Click to View Pricing, Inventory, elivery & Lifecycle Information: Fairchild emiconductor: FM766
Is Now Part of To learn more about ON Semiconductor, please visit our website at
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FDS9AS Dual Notebook Power Supply N-Channel PowerTrench SyncFET General Description The FDS9AS is designed to replace two single SO- MOSFETs and Schottky diode in synchronous DC:DC power supplies that
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FDP085NA N-Channel PowerTrench MOSFET 0 V, 96 A, 8.5 mω Features R DS(on) = 7.35 mω (Typ.) @ V GS = V, I D = 96 A Fast Switching Speed Low Gate Charge, Q G = 3 nc (Typ.) High Performance Trench Technology
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More informationFCH190N65F-F085 N-Channel SuperFET II FRFET MOSFET
FCH9N65F-F85 N-Channel SuperFET II FRFET MOSFET 65 V, 2.6 A, 9 mω Features Typical R DS(on) = 48 mω at = V, I D = A Typical Q g(tot) = 63 nc at = V, I D = A UIS Capability Qualified to AEC Q RoHS Compliant
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More informationIs Now Part of To learn more about ON Semiconductor, please visit our website at
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More informationRURD660S9A-F085 Ultrafast Power Rectifier, 6A 600V
RURD66S9AF85 Ultrafast Power Rectifier, 6A 6V Features High Speed Switching ( t rr =63ns(Typ.) @ =6A ) Low Forward Voltage( V F =.26V(Typ.) @ =6A ) Avalanche Energy Rated AECQ Qualified Applications General
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NTMFSC64NL Power MOSFET 6 V,. m, 76 A, Single N Channel Features Small Footprint (x6 mm) for Compact esign Low R S(on) to Minimize Conduction Losses Low Q G and Capacitance to Minimize river Losses These
More informationNTMFS4936NCT3G. NTMFS4936NC Power MOSFET 30 V, 79 A, Single N Channel, SO 8 FL
NTMFS4936N, NTMFS4936NC Power MOSFET 3 V, 79 A, Single N Channel, Features Low R S(on), Low Capacitance and Optimized Gate Charge to Minimize Conduction, river and Switching Losses Next Generation Enhanced
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Power MOSFET, N-Channel, SUPERFET III, Easy Drive, 65 V, 75 A, 23 m Description SUPERFET III MOSFET is ON Semiconductor s brand new high voltage super junction (SJ) MOSFET family that is utilizing charge
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FGH4TSMD V, 4 A Field Stop Trench IGBT Features High Current Capability Low Saturation Voltage: V CE(sat) =.9 V(Typ.) @ I C = 4 A High Input Impedance Fast Switching RoHS Compliant Applications UPS, welder,
More informationFDH50N50 / FDA50N50 N-Channel UniFET TM MOSFET 500 V, 48 A, 105 mω Features
FDH5N5 / FDA5N5 N-Channel UniFET TM MOSFET 5 V, 48 A, 15 mω Features R DS(on) = 89 mω (Typ.) @ = 1 V, = 24 A Low Gate Charge (Typ. 15 nc) Low C rss (Typ. 45 pf) 1% Avalanche Tested Improved dv/dt Capability
More informationDescription. Symbol Parameter FCMT180N65S3 Unit V DSS Drain to Source Voltage 650 V. - Continuous (T C = 25 o C) 17 - Continuous (T C = 100 o C) 11
FCMT80N65S3 N-Channel SUPERFET III Easy-Drive MOSFET 650 V, 7 A, 80 mω Features 700 V @ T J = 50 o C Typ. R DS(on) = 52 mω Ultra Low Gate Charge (Typ. Q g = 33 nc) Low Effective Output Capacitance (Typ.
More informationDescription TO-3PN. Symbol Parameter FCA76N60N Unit V DSS Drain to Source Voltage 600 V V GSS Gate to Source Voltage ±30 V
FCA76N60N N-Channel SupreMOS MOSFET 600 V, 76 A, 36 mω Features R DS(on) = 28 mω (Typ. ) @ V GS = 0 V, I D = 38 A Ultra Low Gate Charge (Typ. Q g = 28 nc) Low Effective Output Capacitance (Typ. C oss(eff.)
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More informationDescription. Symbol Parameter FCP260N65S3 Unit V DSS Drain to Source Voltage 650 V
FCP260N65S3 N-Channel SuperFET III MOSFET 650 V, 2 A, 260 mω Features 700 V @ T J = 50 o C Typ. R DS(on) = 222 mω Ultra Low Gate Charge (Typ. Q g = 24 nc) Low Effective Output Capacitance (Typ. C oss(eff.)
More informationGeneral Description. Applications. Power management Load switch Q2 3 5 Q1
FDG6342L Integrated Load Switch Features Max r DS(on) = 150mΩ at V GS = 4.5V, I D = 1.5A Max r DS(on) = 195mΩ at V GS = 2.5V, I D = 1.3A Max r DS(on) = 280mΩ at V GS = 1.8V, I D = 1.1A Max r DS(on) = 480mΩ
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Power MOSFET 6 V, 24 m, 2 A, Single N Channel Features Small Footprint (3.3 x 3.3 mm) for Compact esign Low R S(on) to Minimize Conduction Losses Low Capacitance to Minimize river Losses NVTFS5826NLWF
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RURP56F85 5A, 6V Ultrafast Rectifier Features High Speed Switching ( t rr =52ns(Typ.) @ I F =5A ) Low Forward Voltage( V F =.5V(Max.) @ I F =5A ) Avalanche Energy Rated AECQ Qualified Applications Automotive
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More informationRURG8060-F085 80A, 600V Ultrafast Rectifier
RURG86F85 8A, 6V Ultrafast Rectifier Features High Speed Switching ( t rr =74ns(Typ.) @ I F =8A ) Low Forward Voltage( V F =.34V(Typ.) @ I F =8A ) Avalanche Energy Rated AECQ Qaulified Applications Automotive
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Power MOSFET V, A, m, Single P Channel Features Small Footprint (3.3 x 3.3 mm) for Compact esign Low R S(on) to Minimize Conduction Losses Low Q G and Capacitance to Minimize river Losses NVTFS5PLWF Wettable
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FDH055N15A N-Channel PowerTrench MOSFET 150 V, 167 A, 5.9 mω Features R DS(on) = 4.8 mω (Typ.) @ V GS = V, I D = 120 A Fast Switching Speed Low Gate Charge High Performance Trench Technology for Extremely
More informationIs Now Part of. To learn more about ON Semiconductor, please visit our website at
Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers
More informationNVTFS5116PL. Power MOSFET. 60 V, 14 A, 52 m, Single P Channel
Power MOSFET 6 V, 4 A, 52 m, Single P Channel Features Small Footprint (3.3 x 3.3 mm) for Compact esign Low R S(on) to Minimize Conduction Losses Low Capacitance to Minimize river Losses NVTFS56PLWF Wettable
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FGH5T65SQD 65 V, 5 A Field Stop Trench IGBT Features Maximum Junction Temperature : T J =75 o C Positive Temperaure Co-efficient for Easy Parallel Operating High Current Capability Low Saturation Voltage:
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More information650V, 40A Field Stop Trench IGBT
FGHT65SPD-F5 65V, A Field Stop Trench IGBT Features AEC-Q Qualified Low Saturation Voltage : V CE(sat) =.5 V(Typ.) @ I C = A % of the parts are dynamically tested (Note ) Short Circuit Ruggedness > 5 μs
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Data Sheet September 213 File Number 2253.2 N-Channel Power MOSFET 5V, 3A, 4 mω This is an N-Channel enhancement mode silicon gate power field effect transistor designed for applications such as switching
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Power MOSFET, N-Channel, SUPERFET III, Easy Drive, 650 V, 30 A, 99 m Description SUPERFET III MOSFET is ON Semiconductor s brand new high voltage super junction (SJ) MOSFET family that is utilizing charge
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NTNS36NZ Small Signal MOSFET V, 36 ma, Single N Channel, SOT 883 (XDFN3). x.6 x. mm Package Features Single N Channel MOSFET Ultra Low Profile SOT 883 (XDFN3). x.6 x. mm for Extremely Thin Environments
More informationPacking Method. Symbol Parameter Test Conditions Min. Typ. Max. Unit V CE(sat) Saturation Voltage V C = 25 A, V GE = 15 V,
FGA25N2ANTDTU 2 V, 25 A NPT Trench IGBT Features NPT Trench Technology, Positive Temperature Coefficient Low Saturation Voltage: V CE(sat), typ = 2. V @ = 25 A and Low Switching Loss: E off, typ =.96 mj
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Power MOSFET, N-Channel, SUPERFET III, FRFET, 650 V, 40 A, 82 m Description SUPERFET III MOSFET is ON Semiconductor s brand new high voltage super junction (SJ) MOSFET family that is utilizing charge balance
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NTMFDCN Dual N-Channel Power MOSFET 3 V, High Side A / Low Side 7 A, Dual N Channel SOFL Features Co Packaged Power Stage Solution to Minimize Board Space Minimized Parasitic Inductances Optimized Devices
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Protected Power MOSFET 2.6 A, 52 V, N Channel, Logic Level, Clamped MOSFET w/ ESD Protection Features Diode Clamp Between Gate and Source ESD Protection Human Body Model 5 V Active Over Voltage Gate to
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FCH077N65F N-Channel SuperFET II FRFET MOSFET 650 V, 54 A, 77 mω Features 700 V @ T J = 50 C Typ. R DS(on) = 68 mω Ultra Low Gate Charge (Typ. Q g = 26 nc) Low Effective Output Capacitance (Typ. C oss(eff.)
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Power MOSFET 6 V,.7 m, 93 A, Single N Channel Features Small Footprint (x6 mm) for Compact esign Low R S(on) to Minimize Conduction Losses Low Q G and Capacitance to Minimize river Losses WF Wettable Flank
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NTR47N Power MOSFET V,. A, Single N Channel, SOT Features Low R S(on) Low Gate Charge Low Threshold Voltage Halide Free This is a Pb Free evice Applications Power Converters for Portables Battery Management
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More informationIs Now Part of. To learn more about ON Semiconductor, please visit our website at
Is Now Part of To learn more about ON Semiconductor, please visit our website at Please note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need
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