FDMS2734 N-Channel UltraFET Trench MOSFET 250V, 14A, 122mΩ Features

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Marjory McKinney
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power conversion applications. Optimized for r S(on), low ESR, low total and Miller gate charge, these devices are ideal for high frequency C to C converters.

1 FMS7 N-Channel UltraFET Trench MOSFET 5V, A, mω Features Max r S(on) = mω at V GS = V, I =.8A Max r S(on) = mω at V GS = V, I =.7A Low Miller Charge Optimized efficiency at high frequencies RoHS Compliant Pin S S S G General escription February 7 UItraFET devices combine characteristics that enable benchmark efficiency in power conversion applications. Optimized for r S(on), low ESR, low total and Miller gate charge, these devices are ideal for high frequency C to C converters. Application C - C Conversion tm 5 G S 7 S Power 5 (Bottom view) 8 S MOSFET Maximum Ratings T A = 5 C unless otherwise noted Symbol Parameter Ratings Units V S rain to Source Voltage 5 V V GS Gate to Source Voltage ± V I -Continuous T A = 5 C (Note a).8 A rain Current -Continuous (Silicon limited) T C = 5 C -Pulsed Power issipation T P C = 5 C 78 Power issipation T A = 5 C (Note a).5 W T J, T STG Operating and Storage Junction Temperature Range -55 to +5 C Thermal Characteristics R θjc Thermal Resistance, Junction to Case. R θja Thermal Resistance, Junction to Ambient (Note a) 5 Package Marking and Ordering Information C/W evice Marking evice Package Reel Size Tape Width Quantity FMS7 FMS7 Power 5 mm units 7 Fairchild Semiconductor Corporation FMS7 Rev.C

Electrical Characteristics T J = 5 C unless otherwise noted Symbol Parameter Test Conditions Min Typ Max Units Off Characteristics BV SS rain to Source Breakdown Voltage I = 5µA, V GS = V 5 V BV SS

Characteristics (Note ) V GS(th) Gate to Source Threshold Voltage V GS = V S, I = 5µA V V GS(th) T J r S(on) Gate to Source Threshold Voltage Temperature Coefficient rain to Source On Resistance I =

2 Electrical Characteristics T J = 5 C unless otherwise noted Symbol Parameter Test Conditions Min Typ Max Units Off Characteristics BV SS rain to Source Breakdown Voltage I = 5µA, V GS = V 5 V BV SS Breakdown Voltage Temperature I T J Coefficient = 5µA, referenced to 5 C 5 mv/ C I SS Zero Gate Voltage rain Current V S = V, µa I GSS Gate to Source Leakage Current V GS = ±V, V GS = V ± na On Characteristics (Note ) V GS(th) Gate to Source Threshold Voltage V GS = V S, I = 5µA V V GS(th) T J r S(on) Gate to Source Threshold Voltage Temperature Coefficient rain to Source On Resistance I = 5µA, referenced to 5 C - mv/ C V GS = V, I =.8A 5 V GS = V, I =.7A V GS = V, I =.8A T J = 5 C 7 58 g FS Forward Transconductance V S = V, I =.8A S ynamic Characteristics C iss Input Capacitance pf V S = V, V GS = V, C oss Output Capacitance 8 pf f = MHz C rss Reverse Transfer Capacitance 5 pf R g Gate Resistance f = MHz.9 Ω mω Switching Characteristics t d(on) Turn-On elay Time ns V = 5V, I =.8A t r Rise Time ns V GS = V, R GEN = Ω t d(off) Turn-Off elay Time 58 ns t f Fall Time ns Q g(tot) Total Gate Charge at V V GS = V to V V = 5V nc Q gs Gate to Source Gate Charge I =.8A 7 nc Q gd Gate to rain Miller Charge 9 nc rain-source iode Characteristics V S Source to rain iode Forward Voltage V GS = V, I S =.8A (Note ).75. V t rr Reverse Recovery Time 79 9 ns I F =.8A, di/dt = A/µs Q rr Reverse Recovery Charge nc Notes: : R θja is determined with the device mounted on a in pad oz copper pad on a.5 x.5 in. board of FR- material. R θjc is guaranteed by design while R θca is determined by the user's board design. a. 5 C/W when mounted on a in pad of oz copper b. 5 C/W when mounted on a minimum pad of oz copper : Pulse Test: Pulse Width < µs, uty cycle <.%. FMS7 Rev.C

3 Typical Characteristics T J = 5 C unless otherwise noted I, RAIN CURRENT (A) NORMALIZE RAIN TO SOURCE ON-RESISTANCE PULSE URATION = 8µs UTY CYCLE =.5%MAX 5 V S, RAIN TO SOURCE VOLTAGE (V) Figure. I =.8A V GS = V V GS = V V GS = V V GS = 5V V GS =.5V NORMALIZE RAIN TO SOURCE ON-RESISTANCE I, RAIN CURRENT(A) On Region Characteristics Figure. Normalized On-Resistance vs rain Current and Gate Voltage T J, JUNCTION TEMPERATURE ( o C) Figure. Normalized On Resistance vs Junction Temperature rs(on), RAIN TO SOURCE ON-RESISTANCE (mω) Figure. V GS =.5V I = 7A PULSE URATION = 8µs UTY CYCLE =.5%MAX V GS = 5V V GS = V V GS = V PULSE URATION = 8µs UTY CYCLE =.5%MAX T J = 5 o C T J = 5 o C 8 8 V GS, GATE TO SOURCE VOLTAGE (V) On-Resistance vs Gate to Source Voltage I, RAIN CURRENT (A) 8 PULSE URATION = 8µs UTY CYCLE =.5%MAX T J = 5 o C T J = -55 o C T J = 5 o C 5 V GS, GATE TO SOURCE VOLTAGE (V) Figure 5. Transfer Characteristics IS, REVERSE RAIN CURRENT (A) V GS = V. T J = -55 o C T J = 5 o C T J = 5 o C. E V S, BOY IOE FORWAR VOLTAGE (V) Figure. Source to rain iode Forward Voltage vs Source Current FMS7 Rev.C

4 Typical Characteristics T J = 5 C unless otherwise noted VGS, GATE TO SOURCE VOLTAGE(V) IAS, AVALANCHE CURRENT(A) 8 8 Q g, GATE CHARGE(nC) Figure 7. V =75V V = 75V V = 5V C rss f = MHz V GS = V. V S, RAIN TO SOURCE VOLTAGE (V) Gate Charge Characteristics Figure 8. Capacitance vs rain to Source Voltage T J = 5 o C.. t AV, TIME IN AVALANCHE(ms) T J = 5 o C Figure 9. Unclamped Inductive Switching Capability.5 CAPACITANCE (pf) I, RAIN CURRENT (A) 5 9 R θjc =. o C/W V GS = V C iss V GS = V C oss T C, CASE TEMPERATURE ( o C) Figure. Maximum Continuous rain Current vs Case Temperature I, RAIN CURRENT (A).. Figure. Forward Bias Safe Operating Area us ms ms ms OPERATION IN THIS SINGLE PULSE s AREA MAY BE T J = MAX RATE C LIMITE BY r S(on) T A = 5 o C E-. V S, RAIN-SOURCE VOLTAGE (V) P(PK), PEAK TRANSIENT POWER (W) V GS = V SINGLE PULSE FOR TEMPERATURES ABOVE 5 o C ERATE PEAK CURRENT AS FOLLOWS: 5 T A I = I T A = 5 o C t, PULSE WITH (s) Figure. Single Pulse Maximum Power issipation FMS7 Rev.C

5 Typical Characteristics T J = 5 C unless otherwise noted NORMALIZE THERMAL IMPEANCE, Z θja. E- UTY CYCLE-ESCENING ORER. = SINGLE PULSE E t, RECTANGULAR PULSE URATION (s) Figure. Transient Thermal Response Curve P M t t NOTES: UTY FACTOR: = t /t PEAK T J = P M x Z θja x R θja + T A FMS7 Rev.C 5

6 FMS7 Rev.C

7 TRAEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACEx ActiveArray Bottomless Build it Now CoolFET CROSSVOLT OME EcoSPARK E CMOS EnSigna FACT FAST FASTr FPS FRFET Across the board. Around the world. The Power Franchise Programmable Active roop FACT Quiet Series GlobalOptoisolator GTO HiSeC I C i-lo Impliedisconnect IntelliMAX ISOPLANAR LittleFET MICROCOUPLER MicroFET MicroPak MICROWIRE MSX MSXPro OCX OCXPro OPTOLOGIC OPTOPLANAR PACMAN POP Power7 PowerEdge PowerSaver PowerTrench QFET QS QT Optoelectronics Quiet Series RapidConfigure RapidConnect µseres ScalarPump SILENT SWITCHER SMART START SPM Stealth SuperFET SuperSOT - SuperSOT - SuperSOT -8 SyncFET TCM TinyBoost TinyBuck TinyPWM TinyPower TinyLogic TINYOPTO TruTranslation UHC UniFET VCX Wire ISCLAIMER FAIRCHIL SEMICONUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PROUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR ESIGN. FAIRCHIL OES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PROUCT OR CIRCUIT ESCRIBE HEREIN; NEITHER OES IT CONVEY ANY LICENSE UNER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. THESE SPECIFICATIONS O NOT EXPAN THE TERMS OF FAIRCHIL S WORLWIE TERMS AN CONITIONS, SPECIFICALLY THE WARRANTY THEREIN, WHICH COVERS THESE PROUCTS. FMS7 N-Channel UItraFET Trench MOSFET LIFE SUPPORT POLICY FAIRCHIL S PROUCTS ARE NOT AUTHORIZE FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT EVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHIL SEMICONUCTOR CORPORATION. As used herein:. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in significant injury to the user.. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. PROUCT STATUS EFINITIONS efinition of Terms atasheet Identification Product Status efinition Advance Information Formative or In This datasheet contains the design specifications for esign product development. Specifications may change in any manner without notice. Preliminary First Production This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. No Identification Needed Full Production This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. Obsolete Not In Production This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. Rev. I FMS7 Rev.C 7

Features. Max r DS(on) = 50 V GS = -10 V, I D = -4A. Max r DS(on) = 75 V GS = -4.5 V, I D = -3.4A. RoHS Compliant

Features. Max r DS(on) = 50 V GS = -10 V, I D = -4A. Max r DS(on) = 75 V GS = -4.5 V, I D = -3.4A. RoHS Compliant FC58AP Single P-Channel Logic Level PowerTrench MOSFET -3V, -A, 5mΩ General escription This P-Channel Logic Level MOSFET is produced using Fairchild's advanced PowerTrench process. It has been optimized