Applications. Load Switch Primary Switch

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1 FT8 N-Channel Power Trench MOSFET 5 V,.8 A, 8 mω Features Max r S(on) = 8 mω at V GS = V, I =.8 A Max r S(on) = 78 mω at V GS = V, I =. A High performance trench technology for extremely low r S(on) High power and current handling capability in a widely used surface mount package Fast switching speed % UIL Tested RoHS Compliant General escription May This N-Channel MOSFET is produced using Fairchild Semiconductor s advanced Power Trench process that has been optimized for r S(on), switching performance and ruggedness. Applications Load Switch Primary Switch SOT- G S G S MOSFET Maximum Ratings T C = 5 C unless otherwise noted Symbol Parameter Ratings Units V S rain to Source Voltage 5 V V GS Gate to Source Voltage ± V rain Current -Continuous (Note a).8 I -Pulsed A E AS Single Pulse Avalanche Energy (Note ) mj Power issipation T P A = 5 C (Note a). Power issipation T A = 5 C (Note b). W T J, T STG Operating and Storage Junction Temperature Range -55 to +5 C Thermal Characteristics R θjc Thermal Resistance, Junction to Case (Note ) R θja Thermal Resistance, Junction to Ambient (Note a) 55 Package Marking and Ordering Information C/W evice Marking evice Package Reel Size Tape Width Quantity 8 FT8 SOT- mm 5 units Fairchild Semiconductor Corporation

2 Electrical Characteristics T J = 5 C unless otherwise noted Symbol Parameter Test Conditions Min Typ Max Units Off Characteristics BV SS rain to Source Breakdown Voltage I = 5 μa, V GS = V 5 V ΔBV SS Breakdown Voltage Temperature ΔT J Coefficient I = 5 μa, referenced to 5 C mv/ C I SS Zero Gate Voltage rain Current V S = V, V GS = V μa I GSS Gate to Source Leakage Current V GS = ± V, V S = V ± na On Characteristics V GS(th) Gate to Source Threshold Voltage V GS = V S, I = 5 μa... V ΔV GS(th) ΔT J Gate to Source Threshold Voltage Temperature Coefficient ynamic Characteristics I = 5 μa, referenced to 5 C - mv/ C V GS = V, I =.8 A 8 r S(on) Static rain to Source On Resistance V GS = V, I =. A 7 78 mω V GS = V, I =.8 A, T J = 5 C 9 7 g FS Forward Transconductance V S = V, I =.8 A S C iss Input Capacitance pf V S = 75 V, V GS = V, C oss Output Capacitance 5 pf f = MHz C rss Reverse Transfer Capacitance. 5 pf R g Gate Resistance. Ω Switching Characteristics t d(on) Turn-On elay Time 5. ns t r Rise Time V = 75 V, I =.8 A,. ns t d(off) Turn-Off elay Time V GS = V, R GEN = Ω 9.8 ns t f Fall Time. ns Q g(tot) Total Gate Charge V GS = V to V.9 7 nc Q V = 75 V, g(tot) Total Gate Charge V GS = V to 5 V.8 nc I =.8 A Q gs Total Gate Charge. nc Q gd Gate to rain Miller Charge. nc rain-source iode Characteristics V S Source to rain iode Forward Voltage V GS = V, I S =.8 A (Note ).8. V t rr Reverse Recovery Time 8 77 ns I F =.8 A, di/dt = A/μs Q rr Reverse Recovery Charge 7 nc NOTES:. R θja is determined with the device mounted on a in pad oz copper pad on a.5 x.5 in. board of FR- material. R θjc is guaranteed by design while R θca is determined by the user's board design. a) 55 C/W when mounted on a b) 8 C/W when mounted on in pad of oz copper a minimum pad of oz copper. Pulse Test: Pulse Width < μs, uty cycle <.%.. Starting T J = 5 C; N-ch: L = mh, I AS = 5 A, V = 5 V, V GS = V. Fairchild Semiconductor Corporation

3 Typical Characteristics T J = 5 C unless otherwise noted I, RAIN CURRENT (A) NORMALIZE RAIN TO SOURCE ON-RESISTANCE 9 V GS = V 5 V S, RAIN TO SOURCE VOLTAGE (V)... Figure. I =.8 A V GS = V V GS = V V GS = 5.5 V PULSE URATION = 8 μs UTY CYCLE =.5% MAX V GS = 5 V NORMALIZE RAIN TO SOURCE ON-RESISTANCE V GS = V PULSE URATION = 8 μs UTY CYCLE =.5% MAX 9 I, RAIN CURRENT (A) On Region Characteristics Figure. Normalized On-Resistance vs rain Current and Gate Voltage T J, JUNCTION TEMPERATURE ( o C) rs(on), RAIN TO SOURCE ON-RESISTANCE (mω) 5 V GS = 5 V I =.8 A V GS = 5.5 V T J = 5 o C T J = 5 o C V GS = V PULSE URATION = 8 μs UTY CYCLE =.5% MAX V GS, GATE TO SOURCE VOLTAGE (V) Figure. Normalized On Resistance vs Junction Temperature Figure. On-Resistance vs Gate to Source Voltage I, RAIN CURRENT (A) 9 PULSE URATION = 8 μs UTY CYCLE =.5% MAX V S = 5 V T J = 5 o C T J = 5 o C T J = -55 o C IS, REVERSE RAIN CURRENT (A).. V GS = V T J = 5 o C T J = 5 o C T J = -55 o C 5 7 V GS, GATE TO SOURCE VOLTAGE (V) V S, BOY IOE FORWAR VOLTAGE (V) Figure 5. Transfer Characteristics Figure. Source to rain iode Forward Voltage vs Source Current Fairchild Semiconductor Corporation

4 Typical Characteristics T J = 5 C unless otherwise noted VGS, GATE TO SOURCE VOLTAGE (V) 8 I =.8 A 5 Q g, GATE CHARGE (nc) Figure 7. 8 V = 5 V V = 75 V V = V f = MHz V GS = V C rss. V S, RAIN TO SOURCE VOLTAGE (V) Gate Charge Characteristics Figure 8. Capacitance vs rain to Source Voltage CAPACITANCE (pf) C iss C oss IAS, AVALANCHE CURRENT (A) T J = 5 o C T J = 5 o C T J = o C.. t AV, TIME IN AVALANCHE (ms) I, RAIN CURRENT (A) 5 R θjc = o C/W V GS = V V GS = V T C, CASE TEMPERATURE ( o C) Figure 9. Unclamped Inductive Switching Capability Figure. Maximum Continuous rain Current vs Case Temperature I, RAIN CURRENT (A) us ms THIS AREA IS ms. LIMITE BY r S(on) SINGLE PULSE ms T J = MAX RATE s R θja = 8 o C/W s. T A = 5 o C C.5. 5 V S, RAIN to SOURCE VOLTAGE (V) P(PK), PEAK TRANSIENT POWER (W) 5 SINGLE PULSE R θja = 8 o C/W T A = 5 o C t, PULSE WITH (sec) Figure. Forward Bias Safe Operating Area Figure. Single Pulse Maximum Power issipation Fairchild Semiconductor Corporation

5 Typical Characteristics T J = 5 C unless otherwise noted NORMALIZE THERMAL IMPEANCE, Z θja.. UTY CYCLE-ESCENING ORER = t, RECTANGULAR PULSE URATION (sec) Figure. SINGLE PULSE R θja = 8 o C/W P M t t NOTES: UTY FACTOR: = t /t PEAK T J = P M x Z θja x R θja + T A Junction-to-Ambient Transient Thermal Response Curve Fairchild Semiconductor Corporation 5

6 tm tm tm TRAEMARKS The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is not intended to be an exhaustive list of all such trademarks. AccuPower Auto-SPM AX-CAP * BitSiC Build it Now CorePLUS CorePOWER CROSSVOLT CTL Current Transfer Logic EUXPEE ual Cool EcoSPARK EfficentMax ESBC Fairchild Fairchild Semiconductor FACT Quiet Series FACT FAST FastvCore FETBench FlashWriter * FPS F-PFS FRFET Global Power Resource SM Green FPS Green FPS e-series Gmax GTO IntelliMAX ISOPLANAR MegaBuck MICROCOUPLER MicroFET MicroPak MicroPak Millerrive MotionMax Motion-SPM mwsaver OptiHiT OPTOLOGIC OPTOPLANAR PP SPM Power-SPM PowerTrench PowerXS Programmable Active roop QFET QS Quiet Series RapidConfigure Saving our world, mw/w/kw at a time SignalWise SmartMax SMART START SPM STEALTH SuperFET SuperSOT - SuperSOT - SuperSOT -8 SupreMOS SyncFET Sync-Lock * The Power Franchise The Right Technology for Your Success TinyBoost TinyBuck TinyCalc TinyLogic TINYOPTO TinyPower TinyPWM TinyWire TranSiC TriFault etect TRUECURRENT * μseres UHC Ultra FRFET UniFET VCX VisualMax XS *Trademarks of System General Corporation, used under license by Fairchild Semiconductor. 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