FDV303N Digital FET, N-Channel
|
|
- Randall Sparks
- 5 years ago
- Views:
Transcription
1 July 4 FV33N igital FET, N-Channel General escription These N-Channel enhancement mode field effect transistors are produced using Fairchild's proprietary, high cell density, MOS technology. This very high density process is tailored to minimize on-state resistance at low gate drive conditions. This device is designed especially for application in battery circuits using either one lithium or three cadmium or NMH cells. It can be used as an inverter or for high-efficiency miniature discrete C/C conversion in compact portable electronic devices like cellular phones and pagers. This device has excellent on-state resistance even at gate drive voltages as low as. volts. Features V,.68 A continuous, A Peak. R S(ON) =.4 V GS = 4. V R S(ON) =.6 V GS =.7 V. Very low level gate drive requirements allowing direct operation in 3V circuits. V GS(th) < V. Gate-Source Zener for ES ruggedness. >6kV Human Body Model Compact industry standard SOT-3 surface mount package. Alternative to TNT and TNT. SOT-3 SuperSOT TM -6 SuperSOT TM -8 SO-8 SOT-3 SOIC-6 Mark:33 G S Absolute Maximum Ratings T A = o C unless other wise noted Symbol Parameter FV33N Units V SS rain-source Voltage, Power Supply Voltage V V GSS Gate-Source Voltage, V IN 8 V I rain/output Current - Continuous.68 A - Pulsed P Maximum Power issipation.3 W T J,T STG Operating and Storage Temperature Range - to C ES Electrostatic ischarge Rating MIL-ST-883 Human Body Model (pf / Ohm) THERMAL CHARACTERISTICS 6. kv R θja Thermal Resistance, Junction-to-Ambient 37 C/W 997 Fairchild Semiconductor Corporation FV33N Rev.
2 Electrical Characteristics (T A = O C unless otherwise noted ) Symbol Parameter Conditions Min Typ Max Units OFF CHARACTERISTICS BV SS rain-source Breakdown Voltage V GS = V, I = µa V BV SS / T J Breakdown Voltage Temp. Coefficient I = µa, Referenced to o C 6 mv / o C I SS Zero Gate Voltage rain Current V S = V, V GS = V µa T J = C µa I GSS Gate - Body Leakage Current V GS = 8 V, V S = V na ON CHARACTERISTICS (Note) V GS(th) / T J Gate Threshold Voltage Temp. Coefficient I = µa, Referenced to o C -.6 mv / o C V GS(th) Gate Threshold Voltage V S = V GS, I = µa.6.8 V R S(ON) Static rain-source On-Resistance V GS = 4. V, I =. A.33.4 Ω T J = C..8 V GS =.7 V, I =. A.44.6 I (ON) On-State rain Current V GS =.7 V, V S = V. A g FS Forward Transconductance V S = V, I =. A.4 S YNAMIC CHARACTERISTICS C iss Input Capacitance V S = V, V GS = V, pf C oss Output Capacitance f =. MHz 8 pf C rss Reverse Transfer Capacitance 9 pf SWITCHING CHARACTERISTICS (Note) t (on) Turn - On elay Time V = 6 V, I =. A, 3 6 ns t r Turn - On Rise Time V GS = 4. V, R GEN = Ω 8. 8 ns t (off) Turn - Off elay Time 7 3 ns t f Turn - Off Fall Time 3 ns Q g Total Gate Charge V S = V, I =. A,.64.3 nc Q gs Gate-Source Charge V GS = 4. V.38 nc Q gd Gate-rain Charge.4 nc RAIN-SOURCE IOE CHARACTERISTICS AN MAXIMUM RATINGS I S Maximum Continuous rain-source iode Forward Current.3 A V S rain-source iode Forward Voltage V GS = V, I S =. A (Note).83. V Note: Pulse Test: Pulse Width < 3µs, uty Cycle <.%. FV33N Rev.
3 S Typical Electrical Characteristics I, RAIN-SOURCE CURRENT (A) V GS = 4.V R S(on), NORMALIZE RAIN-SOURCE ON-RESISTANCE. V =.V GS V S, RAIN-SOURCE VOLTAGE (V) I, RAIN CURRENT (A) Figure. On-Region Characteristics. Figure. On-Resistance Variation with rain Current and Gate Voltage. R S(ON), NORMALIZE RAIN-SOURCE ON-RESISTANCE I =. A V GS = 4. V T, JUNCTION TEMPERATURE ( C) J R S(on), ON-RESISTANCE (OHM) C C V GS, GATE TO SOURCE VOLTAGE (V) I=.A Figure 3. On-Resistance Variation with Temperature. Figure 4. On Resistance Variation with Gate-To- Source Voltage. I, RAIN CURRENT (A) V =.V S T = - C J... V GS, GATE TO SOURCE VOLTAGE (V) C C I, REVERSE RAIN CURRENT (A) V GS = V... T = C J C - C V S, BOY IOE FORWAR VOLTAGE (V) Figure. Transfer Characteristics. Figure 6. Body iode Forward Voltage Variation with Source Current and Temperature. FV33N Rev.
4 Typical Electrical And Thermal Characteristics V, GATE-SOURCE VOLTAGE (V) GS 4 3 I =.A Q g, GATE CHARGE (nc) Figure 7. Gate Charge Characteristics. V S = V V V CAPACITANCE (pf) f = MHz V GS = V.. V, RAIN TO SOURCE VOLTAGE (V) S Figure 8. Capacitance Characteristics. C iss C oss C rss I, RAIN CURRENT (A) RS(ON) LIMIT V GS= 4.V SINGLE PULSE R θja=37 C/W T A = C C s s V, RAI N-SOURCE VOLTAGE (V) S ms ms ms POWER (W) SINGLE PULSE TIME (SEC) SINGLE PULSE R θja =37 C/W T A = C Figure 9. Maximum Safe Operating Area. Figure. Single Pulse Maximum Power issipation. r(t), NORMALIZE EFFECTIVE TRANSIENT THERMAL RESISTANCE.... = P(pk).. t t. Single Pulse T J - T = P * R (t) A θja. uty Cycle, = t /t t, TIME (sec) R θja (t) = r(t) * R θja R θja = 37 C/W Figure. Transient Thermal Response Curve. FV33N Rev.
5
6 TRAEMARKS The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is not intended to be an exhaustive list of all such trademarks. AccuPower AttitudeEngine Awinda AX-CAP * BitSiC Build it Now CorePLUS CorePOWER CROSSVOLT CTL Current Transfer Logic EUXPEE ual Cool EcoSPARK EfficientMax ESBC Fairchild Fairchild Semiconductor FACT Quiet Series FACT FastvCore FETBench FPS F-PFS FRFET Global Power Resource SM GreenBridge Green FPS Green FPS e-series Gmax GTO IntelliMAX ISOPLANAR Making Small Speakers Sound Louder and Better MegaBuck MICROCOUPLER MicroFET MicroPak MicroPak Millerrive MotionMax MotionGrid MTi MTx MVN mwsaver OptoHiT OPTOLOGIC OPTOPLANAR Power Supply Webesigner PowerTrench PowerXS Programmable Active roop QFET QS Quiet Series RapidConfigure Saving our world, mw/w/kw at a time SignalWise SmartMax SMART START Solutions for Your Success SPM STEALTH SuperFET SuperSOT -3 SuperSOT -6 SuperSOT -8 SupreMOS SyncFET Sync-Lock * TinyBoost TinyBuck TinyCalc TinyLogic TINYOPTO TinyPower TinyPWM TinyWire TranSiC TriFault etect TRUECURRENT * Seres UHC Ultra FRFET UniFET VCX VisualMax VoltagePlus XS Xsens 仙童 * Trademarks of System General Corporation, used under license by Fairchild Semiconductor. ISCLAIMER FAIRCHIL SEMICONUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PROUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION, OR ESIGN. TO OBTAIN THE LATEST, MOST UP-TO-ATE ATASHEET AN PROUCT INFORMATION, VISIT OUR WEBSITE AT FAIRCHIL OES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PROUCT OR CIRCUIT ESCRIBE HEREIN; NEITHER OES IT CONVEY ANY LICENSE UNER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. THESE SPECIFICATIONS O NOT EXPAN THE TERMS OF FAIRCHIL S WORLWIE TERMS AN CONITIONS, SPECIFICALLY THE WARRANTY THEREIN, WHICH COVERS THESE PROUCTS. AUTHORIZE USE Unless otherwise specified in this data sheet, this product is a standard commercial product and is not intended for use in applications that require extraordinary levels of quality and reliability. This product may not be used in the following applications, unless specifically approved in writing by a Fairchild officer: () automotive or other transportation, () military/aerospace, (3) any safety critical application including life critical medical equipment where the failure of the Fairchild product reasonably would be expected to result in personal injury, death or property damage. Customer s use of this product is subject to agreement of this Authorized Use policy. In the event of an unauthorized use of Fairchild s product, Fairchild accepts no liability in the event of product failure. In other respects, this product shall be subject to Fairchild s Worldwide Terms and Conditions of Sale, unless a separate agreement has been signed by both Parties. ANTI-COUNTERFEITING POLICY Fairchild Semiconductor Corporation's Anti-Counterfeiting Policy. Fairchild's Anti-Counterfeiting Policy is also stated on our external website, under Terms of Use Counterfeiting of semiconductor parts is a growing problem in the industry. All manufacturers of semiconductor products are experiencing counterfeiting of their parts. Customers who inadvertently purchase counterfeit parts experience many problems such as loss of brand reputation, substandard performance, failed applications, and increased cost of production and manufacturing delays. Fairchild is taking strong measures to protect ourselves and our customers from the proliferation of counterfeit parts. Fairchild strongly encourages customers to purchase Fairchild parts either directly from Fairchild or from Authorized Fairchild istributors who are listed by country on our web page cited above. Products customers buy either from Fairchild directly or from Authorized Fairchild istributors are genuine parts, have full traceability, meet Fairchild's quality standards for handling and storage and provide access to Fairchild's full range of up-to-date technical and product information. Fairchild and our Authorized istributors will stand behind all warranties and will appropriately address any warranty issues that may arise. Fairchild will not provide any warranty coverage or other assistance for parts bought from Unauthorized Sources. Fairchild is committed to combat this global problem and encourage our customers to do their part in stopping this practice by buying direct or from authorized distributors. PROUCT STATUS EFINITIONS efinition of Terms atasheet Identification Product Status efinition atasheet contains the design specifications for product development. Specifications may change Advance Information Formative / In esign in any manner without notice. atasheet contains preliminary data; supplementary data will be published at a later date. Fairchild Preliminary First Production Semiconductor reserves the right to make changes at any time without notice to improve design. atasheet contains final specifications. Fairchild Semiconductor reserves the right to make No Identification Needed Full Production changes at any time without notice to improve the design. atasheet contains specifications on a product that is discontinued by Fairchild Semiconductor. Obsolete Not In Production The datasheet is for reference information only. Rev. I77 Fairchild Semiconductor Corporation
7 Mouser Electronics Authorized istributor Click to View Pricing, Inventory, elivery & Lifecycle Information: Fairchild Semiconductor: FV33N
BAT54 / BAT54A / BAT54C / BAT54S Schottky Diodes
BAT54 / BAT54A / BAT54C / BAT54S Schottky Diodes 1 SOT-2 Ordering Information 2 L4P 1 2 MARKING BAT54 = L4P BAT54A = L42 BAT54C = L4 BAT54S = L44 November 2014 Connection Diagram BAT54 BAT54A 1 2NC 1 2
More informationBAT54SWT1G / BAT54CWT1G Schottky Diodes
BAT54SWT1G / BAT54CWT1G Schottky Diodes SOT-2 1 2 MARKING BAT54SWT1G = YB BAT54CWT1G = YC November 2015 Connection Diagram BAT54SWT1G BAT54CWT1G 1 2 1 2 Ordering Information Part Number Top Mark Package
More informationFDC655BN Single N-Channel, Logic Level, PowerTrench MOSFET
FC655BN Single N-Channel, Logic Level, PowerTrench MOSFET 3 V, 6.3 A, 5 mω Features Max r S(on) = 5 mω at V GS = V, I = 6.3 A Max r S(on) = 33 mω at V GS =.5 V, I = 5.5 A Fast switching Low gate charge
More informationFDMA510PZ. Single P-Channel PowerTrench MOSFET 20V, 7.8A, 30m. FDMA510PZ Single P-Channel PowerTrench MOSFET
FMA50PZ Single P-Channel PowerTrench MOSFET 20V, 7.8A, 30m Features Max r S(on) = 30m at V GS = 4.5V, I = 7.8A Max r S(on) = 37m at V GS = 2.5V, I = 6.6A Max r S(on) = 50m at V GS =.8V, I = 5.5A Max r
More informationApplications. Load Switch Primary Switch
FT8 N-Channel Power Trench MOSFET 5 V,.8 A, 8 mω Features Max r S(on) = 8 mω at V GS = V, I =.8 A Max r S(on) = 78 mω at V GS = V, I =. A High performance trench technology for extremely low r S(on) High
More informationFJB102 NPN High-Voltage Power Darlington Transistor
FJB102 NPN High-Voltage Power Darlington Transistor Features High DC Current Gain : h FE = 0 at = 4 V, = 3 A (Minimum) Low Collector-Emitter Saturation Voltage 1 D 2 -PAK 1.Base 2.Collector 3.Emitter B
More informationFJV42 NPN High-Voltage Transistor
FJV42 NPN High-Voltage Transistor 3 2 October 2014 FJV42 NPN High-Voltage Transistor 1 SOT-23 Marking: 1DF 1. Base 2. Emitter 3. Collector Ordering Information Part Number Marking Package Packing Method
More information1N4934-1N4937 Fast Rectifiers
N4934 - N4937 Fast Rectifiers Features Low Forward Voltage Drop High Surge Current Capability High Reliability High Current Capability DO-4 COLOR BAND DENOTES CATHODE January 25 N4934 - N4937 Fast Rectifiers
More informationTIP47 / TIP48 / TIP49 / TIP50 NPN Silicon Transistor
TIP47 / TIP48 / TIP49 / TIP50 NPN Silicon Transistor Features High-Voltage and Switching Applications High Sustaining Voltage: V CEO (sus) = 250 V, 300 V, 350 V, 400 V 1 A Rated Collector Current Ordering
More informationFJP13007 High Voltage Fast-Switching NPN Power Transistor
FJP3007 High Voltage Fast-Switching NPN Power Transistor Features High Voltage High Speed Power Switch Application High Voltage Capability High Switching Speed Suitable for Electronic Ballast and Switching
More informationFeatures. TA=25 o C unless otherwise noted
P-Channel.V Specified PowerTrench MOSFET November General Description This P-Channel.V specified MOSFET uses Fairchild s advanced low voltage PowerTrench process. It has been optimized for battery power
More informationTIP147T PNP Epitaxial Silicon Darlington Transistor
TIP147T PNP Epitaxial Silicon Darlington Transistor Features Monolithic Construction with Built-in Base-Emitter Shunt Resistors High DC Current Gain: h FE = 1000 at = -4 V, = -5 A (Minimum) Industrial
More informationBAT54HT1G Schottky Barrier Diodes
BAT54HT1G Schottky Barrier Diodes 1 A2 Connection Diagram 1 July 2013 SOD-323 2 2 Ordering Information Part Number Marking Package Packing Method BAT54HT1G A2 SOD-323 2L Tape and Reel Absolute Maximum
More informationLL4148 Small Signal Diode
LL4148 Small Signal Diode Cathode Band COLOR BAND MARKING 1ST BAND Black April 2013 SOD80 The 1st Band indicates the cathode band Package Marking and Ordering Information Device Marking Device Package
More informationBSS138W N-Channel Logic Level Enhancement Mode Field Effect Transistor
December 2010 BSS138W N-Channel Logic Level Enhancement Mode Field Effect Transistor General Description These N-Channel enhancement mode field effect transistor. These products have been designed to minimize
More informationFDS6679AZ P-Channel PowerTrench MOSFET -30V, -13A, 9mΩ General Description
FS6679AZ P-Channel PowerTrench MOSFET -3V, -3A, 9mΩ General escription This P-Channel MOSFET is producted using Fairchild Semiconductor s advanced PowerTrench process that has been especially tailored
More informationJ175 / J176 / MMBFJ175 / MMBFJ176 / MMBFJ177 P-Channel Switch
J7 / J76 / MMBFJ7 / MMBFJ76 / MMBFJ77 P-Channel Switch escription This device is designed for low-level analog switching sample-and-hold circuits and chopper-stabilized amplifiers. Sourced from process
More informationKSA1281 PNP Epitaxial Silicon Transistor
KSA1281 PNP Epitaxial Silicon Transistor Features Audio Power Amplifier 3 W Output Application October 2014 1 TO-92L 1. Emitter 2. Collector 3. Base KSA1281 PNP Epitaxial Silicon Transistor Ordering Information
More information2N7002W N-Channel Enhancement Mode Field Effect Transistor
2N7002W N-Channel Enhancement Mode Field Effect Transistor Features Low On-Resistance Low Gate Threshold Voltage Low Input Capacitance Fast Switching Speed Low Input/Output Leakage Ultra-Small Surface
More informationFJN3314R NPN Epitaxial Silicon Transistor with Bias Resistor
FJN3314R NPN Epitaxial Silicon Transistor with Bias Resistor Features ma Output Current Capability Built-in Bias Resistor ( = 4.7 kω, = 47 kω) Applications Switching, Interface, and Driver Circuits Inverters
More information2N7000BU / 2N7000TA Advanced Small-Signal MOSFET
2N7000BU / 2N7000TA Advanced Small-Signal MOSFET Features Fast Switching Times Improved Inductive Ruggedness Lower Input Capacitance Extended Safe Operating Area Improved High-Temperature Reliability 1
More informationFDMA908PZ. Single P-Channel PowerTrench MOSFET. FDMA908PZ Single P-Channel PowerTrench MOSFET. -12 V, -12 A, 12.5 mω Features. General Description
FMA908PZ Single P-Channel PowerTrench MOSFET -2 V, -2 A, 2.5 mω Features Max r S(on) = 2.5 mω at V GS = -4.5 V, I = -2 A Max r S(on) = 8 mω at V GS = -2.5 V, I = -0 A Max r S(on) = 28 mω at V GS = -.8
More informationKSP2222A NPN General-Purpose Amplifier
KSP2222A NPN General-Purpose Amplifier Features Collector-Emitter Voltage: V CEO = 40 V Available as PN2222A November 2014 TO-92 1 2 3 1. Emitter 2. Base 3. Collector Ordering Information Part Number Marking
More informationBC327 PNP Epitaxial Silicon Transistor
BC327 PNP Epitaxial Silicon Transistor Features Switching and Amplifier Applications Suitable for AF-Driver Stages and Low-Power Output Stages Complement to BC337 / BC338 October 2014 1 TO-92 1. Collector
More informationJ105 / J106 / J107 N-Channel Switch
J105 / J106 / J107 N-Channel Switch Description This device is designed for analog or digital switching applications where very low on resistance is mandatory. Sourced from Process 59. September 2013 Ordering
More informationIs Now Part of To learn more about ON Semiconductor, please visit our website at
Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com ON Semiconductor and the ON Semiconductor logo are trademarks of Semiconductor Components Industries, LLC
More informationFeatures I-PAK (TO-251AA) T A=25 o C unless otherwise noted. Symbol Parameter Ratings Units
FDD376/FDU376 2V N-Channel PowerTrench MOSFET General Description Features March 25 FDD376/FDU376 This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters
More informationFGD V PDP Trench IGBT
FGD4536 360 V PDP Trench IGBT Features High Current Capability Low Saturation Voltage: V CE(sat) = 1.59 V @ I C = 50 A High Input Impedance Fast Switching RoHS Compliant Applications PDP TV, Consumer Appliances
More informationKSC2383 NPN Epitaxial Silicon Transistor
KSC2383 NPN Epitaxial Silicon Transistor October 204 TO-92L. Emitter 2. Collector 3. Base Ordering Information Part Number Top Mark Package Packing Method KSC2383OTA C2383 O- TO-92 3L Ammo KSC2383YTA C2383
More informationTIP102 NPN Epitaxial Silicon Darlington Transistor
TIP102 NPN Epitaxial Silicon Darlington Transistor Features Monolithic Construction with Built-in Base-Emitter Shunt Resistors High DC Current Gain: h FE = 0 @ V CE = 4 V, I C = 3 A (Minimum) Collector-Emitter
More informationFeatures I-PAK (TO-251AA) TA=25 o C unless otherwise noted
3V N-Channel Fast Switching PowerTrench MOSFET General Description Features March 25 This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either
More informationFJP13009 High-Voltage Fast-Switching NPN Power Transistor
FJP3009 High-Voltage Fast-Switching NPN Power Transistor Features High-Voltage Capability High Switching Speed Applications Electronic Ballast Switching Regulator Motor Control Switched Mode Power Supply
More informationJ175 / J176 / MMBFJ175 / MMBFJ176 / MMBFJ177 P-Channel Switch
J7 / J76 / MMBFJ7 / MMBFJ76 / MMBFJ77 P-Channel Switch escription This device is designed for low-level analog switching sample-and-hold circuits and chopper-stabilized amplifiers. Sourced from process
More informationFDC610PZ P-Channel PowerTrench MOSFET
FC6PZ P-Channel PowerTrench MOSFET 3V, 4.9A, 4mΩ Features Max r S(on) = 4mΩ at V GS = V, I = 4.9A Max r S(on) = 7mΩ at V GS = 4.V, I = 3.7A Low gate charge (7nC typical). High performance trench technology
More informationFDMB2308PZ Dual Common Drain P-Channel PowerTrench MOSFET
FDMB38PZ Dual Common Drain P-Channel PowerTrench MOSFET - V, -7 A, 36 mω Features Max r SS(on) = 36 mω at V GS = -4.5 V, I D = -5.7 A Max r SS(on) = 5 mω at V GS = -.5 V, I D = -4.6 A Low Profile -.8 mm
More informationBAS16 Small Signal Diode
BAS6 Small Signal Diode February 205 2 A6 2 Connection Diagram 2NC SOT-2 Ordering Information Part Number Top Mark Package Packing Method BAS6 A6 SOT-2 L Tape and Reel, 7 inch Reel, 000 pcs BAS6_D87Z A6
More information1N/FDLL 914A/B / 916/A/B / 4148 / 4448 Small Signal Diode
1N/FDLL 914A/B / 916/A/B / 4148 / 4448 Small Signal Diode DO-35 Cathode is denoted with a black band LL-34 THE PLACEMENT OF THE EXPANSION GAP HAS NO RELATIONSHIP TO THE LOCATION OF THE CATHODE TERMINAL
More informationFDH / FDLL 300 / A / 333 High Contraction Low Leakage Diode
FDH / FDLL 300 / A / 333 High Contraction Low Leakage Diode DO-35 Cathode is denoted with a black band Cathode Band LL-34 SOD80 THE PLACEMENT OF THE EXPANSION GAP HAS NO RELATIONSHIP TO THE LOCATION OF
More informationFDC6303N Digital FET, Dual N-Channel
August 997 FC6N igital FET, ual N-Channel General escription Features These dual N-Channel logic level enhancement mode field effect transistors are produced using Fairchild's proprietary, high cell density,
More informationFIN1002 LVDS 1-Bit, High-Speed Differential Receiver
July 2016 FIN1002 LVDS 1-Bit, High-Speed Differential Receiver Features Greater than 400 Mbs Data Rate 3.3 V Power Supply Operation 0.4 ns Maximum Pulse Skew 2.5 ns Maximum Propagation Delay Bus Pin ESD
More informationBAV103 High Voltage, General Purpose Diode
BAV3 High Voltage, General Purpose Diode Cathode Band SOD80 Description April 2013 A general purpose diode that couples high forward conductance fast swiching speed and high blocking voltages in a glass
More informationFDD V P-Channel PowerTrench MOSFET 40V, 32A, 27mΩ Features
FDD4685 V P-Channel PowerTrench MOSFET V, 32A, 27mΩ Features Max r DS(on) = 27mΩ at V GS = 0V, I D = 8.4A Max r DS(on) = 35mΩ at V GS = 4.5V, I D = 7A High performance trench technology for extremely low
More informationFJN4303R PNP Epitaxial Silicon Transistor with Bias Resistor
FJN4303R PNP Epitaxial Silicon Transistor with Bias Resistor Features 100 ma Output Current Capability Built-in Bias Resistor (R 1 = 22 kω, R 2 = 22 kω) Application Switching, Interface, and Driver Circuits
More informationJ309 / J310 / MMBFJ309 / MMBFJ310 N-Channel RF Amplifier
J / J / MMBFJ / MMBFJ N-Channel RF Amplifier Features This device is designed for VHF/UHF amplifier, oscillator and mixer applications. As a common gate amplifier, 16 db at 100 MHz and 12 db at 450 MHz
More informationPart Number Top Mark Package Packing Method
KSA3 PNP Epitaxial Silicon Transistor Features Color TV Audio Output Color TV Vertical Deflection Output September 203 TO-92L. Emitter 2. Collector 3. Base Ordering Information Part Number Top Mark Package
More informationFDMA1032CZ 20V Complementary PowerTrench MOSFET
FDMACZ V Complementary PowerTrench MOSFET General Description This device is designed specifically as a single package solution for a DC/DC 'Switching' MOSFET in cellular handset and other ultra-portable
More informationFDMB2307NZ Dual Common Drain N-Channel PowerTrench MOSFET
FDMB237NZ Dual Common Drain N-Channel PowerTrench MOSFET 2 V, 9.7 A, 6.5 mω Features Max r SS2(on) = 6.5 mω at V GS = 4.5 V, I D = 8 A Max r SS2(on) = 8 mω at V GS = 4.2 V, I D = 7.4 A Max r SS2(on) =
More informationBSS138K N-Channel Logic Level Enhancement Mode Field Effect Transistor
May 2013 BSS138K N-Channel Logic Level Enhancement Mode Field Effect Transistor Features Low On-Resistance Low Gate Threshold Voltage Low Input Capacitance Fast Switching Speed Low Input/Output Leakage
More informationApplications. Top. Pin 1 D D 8. Symbol Parameter Ratings Units V DS Drain to Source Voltage -30 V V GS Gate to Source Voltage ±25 V
FMC4435BZ P-Channel Power Trench MOSFET -V, -8A,.mΩ Features Max r S(on) =.mω at V GS = -V, I = -8.5A Max r S(on) = 37.mΩ at V GS = -4.5V, I = -6.3A Extended V GSS range (-5V) for battery applications
More information2N5550 NPN Epitaxial Silicon Transistor
2N5550 NPN Epitaxial Silicon Transistor Features Amplifier Transistor Collector-Emitter Voltage: V CEO = 40 V February 205 TO-92. Emitter 2. Base 3. Collector Ordering Information Part Number Top Mark
More informationFDD86252 N-Channel PowerTrench MOSFET 150 V, 27 A, 52 m Features
FDD86 N-Channel PowerTrench MOSFET V, 7 A, m Features Max r DS(on) = m at V GS = V, I D = A Max r DS(on) = 7 m at V GS = 6 V, I D = 4 A % UIL tested RoHS Compliant General Description September This N-Channel
More informationFQD7N30 N-Channel QFET MOSFET
FQD7N30 N-Channel QFET MOSFET 300 V, 5.5 A, 700 mω Description This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor s proprietary planar stripe and DMOS technology. This
More informationFJA13009 High-Voltage Switch Mode Application
FJA3009 High-Voltage Switch Mode Application Features High-Speed Switching Suitable for Switching Regulator and Motor Control Ordering Information July 203 Part Number Marking Package Packing Method FJA3009TU
More informationKA431S / KA431SA / KA431SL Programmable Shunt Regulator
/ A / L Programmable Shunt Regulator Features Programmable Output Voltage to 36 V Low Dynamic Output Impedance.2 Ω (Typical) Sink Current Capability: 1. to 1 ma Equivalent Full-Range Temperature Coefficient
More informationBC846 / BC847 / BC848 / BC850 NPN Epitaxial Silicon Transistor
BC846 / BC847 / BC848 / BC850 NPN Epitaxial Silicon Transistor Features Switching and Amplifier Applications Suitable for Automatic Insertion in Thick and Thin-film Circuits Low Noise: BC850 Complement
More informationSymbol Parameter Ratings Units V DS Drain to Source Voltage 20 V V GS Gate to Source Voltage ±8 V -Continuous T
FDGNZ Dual N-Channel PowerTrench MOSFET V,. A, 7 mω Features Max r DS(on) = 7 mω at V GS =. V, I D =. A Max r DS(on) = mω at V GS =. V, I D =. A Max r DS(on) = 7 mω at V GS =.8 V, I D =.9 A Max r DS(on)
More informationQED223 Plastic Infrared Light Emitting Diode
QED223 Plastic Infrared Light Emitting Diode FeaturesPACKAGE DIMENSIONS λ = 880nm Chip material = AlGaAs Package type: T-1 3/4 (5mm lens diameter) Matched photosensor: QSD123/QSD124 Medium wide emission
More informationDescription G D TO-220. Symbol Parameter FDP7N50 Unit. Maximum Lead Temperature for Soldering Purpose, 300 C 1/8 from Case for 5 Seconds
FDP7N50 N-Channel UniFET TM MOSFET 500 V, 7 A, 900 m Features R DS(on) = 900 m (Max.) @ = 10 V, = 3.5 A Low Gate Charge (Typ. 12.8 nc) Low C rss (Typ. 9 pf) 100% Avalanche Tested Applications ALCD/LED
More informationFDN337N N-Channel Logic Level Enhancement Mode Field Effect Transistor. = 25 o C unless other wise noted Symbol Parameter FDN337N Units V DSS
March 998 FN7N N-Channel Logic Level Enhancement Mode Field Effect Transistor General escription SuperSOT TM - N-Channel logic level enhancement mode power field effect transistors are produced using Fairchild's
More informationQEE113 Plastic Infrared Light Emitting Diode
QEE113 Plastic Infrared Light Emitting Diode Features λ = 940 nm Package Type = Sidelooker Chip Material = GaAs Matched Photosensor: QSE113 Medium Wide Emission Angle, 50 Package Material: Clear Epoxy
More informationJ111 / J112 / J113 / MMBFJ111 / MMBFJ112 / MMBFJ113 N-Channel Switch
J / J2 / J3 / MMBFJ / MMBFJ2 / MMBFJ3 N-Channel Switch Features This device is designed for low level analog switching, sample and hold circuits and chopper stabilized amplifiers. Sourced from process
More informationJ174 / J175 / J176 / J177 MMBFJ175 / MMBFJ176 / MMBFJ177 P-Channel Switch
J174 / J175 / J176 / J177 MMBFJ175 / MMBFJ176 / MMBFJ177 P-Channel Switch J174 / 175 / 176 / 177 (1) MMBFJ175 / 176 / 177 S G D Ordering Information TO-92 Description June 2013 This device is designed
More informationFQD5N15 N-Channel QFET MOSFET
FQD5N15 N-Channel QFET MOSFET 150 V, 4.3 A, 800 mω Description This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor s proprietary planar stripe and DMOS technology. This
More informationKSD1621 NPN Epitaxial Silicon Transistor
KSD62 NPN Epitaxial Silicon Transistor Features High Current Driver Applications Low Collector-Emitter Saturation Voltage Large Current Capacity and Wide SOA Fast Switching Speed Complement to KSB2 Marking
More informationBAV ma 70 V High Conductance Ultra-Fast Switching Diode
April 2014 BAV99 200 ma 70 V High Conductance Ultra-Fast Switching Diode Features High Conductance: I F = 200 ma Fast Switching Speed: t rr < 6 ns Maximum Small Plastic SOT-2 Package Series-Pair Configuration
More informationFJV3105R NPN Epitaxial Silicon Transistor with Bias Resistor
FJV3105R NPN Epitaxial Silicon Transistor with Bias Resistor Features 100 ma Output Current Capability Built-in Bias Resistor (R 1 = 4.7 kω, R 2 = 10 kω) Application Switching, Interface, and Driver Circuits
More informationFDG6304P Dual P-Channel, Digital FET
uly 999 FG64P ual P-Channel, igital FET General escription Features These dual P-Channel logic level enhancement mode field effect transistors are produced using Fairchild's proprietary, high cell density,
More informationFDT3N40 N-Channel UniFET TM MOSFET 400 V, 2.0 A, 3.4 Features
FDT3N40 N-Channel UniFET TM MOSFET 400 V, 2.0 A, 3.4 Features R DS(on) = 3.4 Ω (Max.) @ V GS = 10 V, = 1.0 A Low Gate Charge (Typ. 4.5 nc) Low Crss (Typ. 3.7 pf) 100% Avalanche Tested Applications LCD/LED
More informationFQT7N10L N-Channel QFET MOSFET 100 V, 1.7 A, 350 mω
FQT7N10L N-Channel QFET MOSFET 100 V, 1.7 A, 350 mω Description This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor s proprietary planar stripe and DMOS technology. This
More informationKSA473 PNP Epitaxial Silicon Transistor
KSA473 PNP Epitaxial Silicon Transistor Features Low Frequency Power Amplifier, Power Regulator Collector Current : = -3A Collector Dissipation : P C = 10W (T C =25 C) Complement to KSC1173 August 2009
More informationDescription TO-220F. Symbol Parameter FDPF7N50U Unit. Maximum Lead Temperature for Soldering Purpose, 300 C 1/8 from Case for 5 Seconds
FDPF7N50U N-Channel UniFET TM Ultra FRFET TM MOSFET 500 V, 5 A, 1.5 Features R DS(on) = 1.5 (Max.) @ = 10 V, = 2.5 A Low Gate Charge (Typ.12.8 nc) Low C rss (Typ. 9 pf) 100% Avalanche Tested Improved dv/dt
More informationFQT7N10L N-Channel QFET MOSFET 100 V, 1.7 A, 350 mω
FQT7N10L N-Channel QFET MOSFET 100 V, 1.7 A, 350 mω Description This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor s proprietary planar stripe and DMOS technology. This
More informationFGH30S130P 1300 V, 30 A Shorted-anode IGBT
FGH3S3P 3 V, 3 A Shorted-anode IGBT Features High Speed Switching Low Saturation Voltage: V CE(sat) =.75 V @ I C = 3 A High Input Impedance RoHS Compliant Applications Induction Heating, Microwave Oven
More informationFGH75N60UF 600 V, 75 A Field Stop IGBT
FGH75N6UF 6 V, 75 A Field Stop IGBT Features High Current Capability Low Saturation Voltage: V CE(sat) =.9 V @ I C = 75 A High Input Impedance Fast Switching RoHS Compliant Applications Solar Inverter,
More informationBD136 / BD138 / BD140 PNP Epitaxial Silicon Transistor
BD136 / BD138 / BD140 PNP Epitaxial Silicon Transistor Features Complement to BD135, BD137 and BD139 respectively Applications Medium Power Linear and Switching Ordering Information 1 TO-126 1. Emitter
More informationFeatures G G SOT-223. Symbol Parameter FQT1N60C Unit V DSS Drain to Source Voltage 600 V V GSS Gate to Source Voltage ±30 V
FQT1N60C N-Channel QFET MOSFET 600V, 0.2 A, 11.5 Ω Description This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor s proprietary planar stripe and DMOS technology. This
More informationFGH40N60UFD 600 V, 40 A Field Stop IGBT
FGH40N60UFD 600 V, 40 A Field Stop IGBT Features High Current Capability Low Saturation Voltage: V CE(sat) = 1.8 V @ I C = 40 A High Input Impedance Fast Switching RoHS Compliant Applications Solar Inverter,
More informationFDMA1023PZ Dual P-Channel PowerTrench MOSFET
FDMA0PZ Dual P-Channel PowerTrench MOSFET 0V,.7A, 7m Features Max r DS(on) = 7m at V GS =.V, I D =.7A Max r DS(on) = 9m at V GS =.V, I D =.A Max r DS(on) = 0m at V GS =.8V, I D =.0A Max r DS(on) = 9m at
More informationFQD7P20 P-Channel QFET MOSFET
FQD7P20 P-Channel QFET MOSFET -200 V, -5.7 A, 690 mω Description This P-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor s proprietary planar stripe and DMOS technology.
More informationN-Channel QFET MOSFET 150 V, 50 A, 42 mω
FQA46N15 / FQA46N15_F109 N-Channel QFET MOSFET 150 V, 50 A, 42 mω Description This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor s proprietary planar stripe and DMOS
More informationKSC1815 NPN Epitaxial Silicon Transistor
KSC85 NPN Epitaxial Silicon Transistor Features Audio Frequency Amplifier & High Frequency OSC Complement to KSA5 Collector-Base Voltage: V CBO = 50 V TO-92 April 203. Emitter 2. Collector 3. Base Ordering
More informationFGD V, PDP IGBT
FGD4536 36V, PDP IGBT Features High Current Capability Low Saturation Voltage: V CE (sat) =.59 V @ I C = 5 A High Input Impedance Fast Switching RoHS Compliant Application PDP System General Description
More informationKA431S / KA431SA / KA431SL Programmable Shunt Regulator
/ A / L Programmable Shunt Regulator Features Programmable Output Voltage to 36 V Low Dynamic Output Impedance.2 Ω (Typical) Sink Current Capability: 1. to 1 ma Equivalent Full-Range Temperature Coefficient
More informationFDG6303N Dual N-Channel, Digital FET
September FG6N ual N-Channel, igital FET General escription Features These dual N-Channel logic level enhancement mode field effect transistors are produced using Fairchild's proprietary, high cell density,
More informationMMBFJ309 / MMBFJ310 N-Channel RF Amplifier
MMBFJ309 / MMBFJ310 N-Channel RF Amplifier Description This device is designed for VHF/UHF amplifier, oscillator and mixer applications. As a common gate amplifier, 16 db at 100 MHz and 12 db at 450 MHz
More informationKSC1845 NPN Epitaxial Silicon Transistor
KSC845 NPN Epitaxial Silicon Transistor Features Audio Frequency Low-Noise Amplifier Complement to KSA992 February 205 TO-92. Emitter 2. Collector 3. Base Ordering Information Part Number Top Mark Package
More informationFDD8444 N-Channel PowerTrench MOSFET
M E N FDD8444 N-Channel PowerTrench MOSFET 40V, 50A, 5.2mΩ Features Applications Typ r DS(on) = 4mΩ at V GS = V, I D = 50A Automotive Engine Control Typ Q g() = 89nC at V GS = V Powertrain Management Low
More informationFDFMA2P857. Integrated P-Channel PowerTrench MOSFET and Schottky Diode. FDFMA2P857 Integrated P-Channel PowerTrench MOSFET and Schottky Diode
FDFMAP87 Integrated P-Channel PowerTrench MOSFET and Schottky Diode 0V,.0A, 0mΩ Features MOSFET: Max r DS(on) = 0mΩ at V GS =.V, I D =.0A Max r DS(on) = 60mΩ at V GS =.V, I D =.A Max r DS(on) = 0mΩ at
More informationKSD1616A NPN Epitaxial Silicon Transistor
KSD66A NPN Epitaxial Silicon Transistor Features Audio Frequency Power Amplifier and Medium Speed Switching Complement to KSB6 / KSB6A February 205 TO-92. Emitter 2. Collector 3. Base KSD66A NPN Epitaxial
More informationApplications. S1 Power 33
FDMC83 Dual N-Channel Power Trench MOSFET V, A, mω Features Max r DS(on) = mω at V GS = V, I D = A Max r DS(on) = mω at V GS =. V, I D = A Max r DS(on) = 8 mω at V GS = 3. V, I D = A Termination is Lead-free
More informationFYP2010DN Schottky Barrier Rectifier
FYP20DN Schottky Barrier Rectifier Features Low forward voltage drop High frequency properties and switching speed Guard ring for over-voltage protection.anode August 2009 FYP20DN Schottky Barrier Rectifier
More informationKSC1815 NPN Epitaxial Silicon Transistor
KSC85 NPN Epitaxial Silicon Transistor Features Audio Frequency Amplifier and High-Frequency OSC Complement to KSA5 Collector-Base Voltage: V CBO = 50 V TO-92. Emitter 2. Collector 3. Base May 204 Ordering
More informationSOT-23 SuperSOT TM -8 SO-8 SOT-223. = 25 C unless otherwise noted. Symbol Parameter N-Channel P-Channel Units V DSS
July 998 FS898A ual N & P-Channel Enhancement Mode Field Effect Transistor General escription Features These dual N- and P -Channel enhancement mode power field effect transistors are produced using Fairchild's
More informationFGPF V PDP Trench IGBT
FGPF4536 36 V PDP Trench IGBT Features High Current Capability Low Saturation Voltage: V CE (sat) =.59 V @ I C = 5 A High Input Impedance Fast Switching RoHS Compliant Applications PDP TV, Consumer appliances,
More informationFQPF22P10 P-Channel QFET MOSFET -100 V, A, 125 mω
FQPF22P10 P-Channel QFET MOSFET -100 V, -13.2 A, 125 mω Description This P-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor s proprietary planar stripe and DMOS technology.
More informationLM317M 3-Terminal 0.5A Positive Adjustable Regulator
LM317M 3-Terminal 0.5A Positive Adjustable Regulator Features Output Current in Excess of 0.5 A Output Adjustable Between 1.2 V and 37 V Internal Thermal Overload Protection Internal Short-Circuit Current
More informationFQD5P10 P-Channel QFET MOSFET
FQD5P10 P-Channel QFET MOSFET -100 V, -3.6 A, 1.05 Description This P-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor s proprietary planar stripe and DMOS technology. This
More informationKSC5502D/KSC5502DT. Symbol Characteristics Rating Unit R θjc Thermal Resistance Junction to Case 2.5 C/W R θja Junction to Ambient 62.
High Voltage Power Switch Switching Application Wide Safe Operating Area Built-in Free-Wheeling Diode Suitable for Electronic Ballast Application Small Variance in Storage Time Two Package Choices : D-PAK
More informationApplications. Symbol Parameter Q1 Q2 Units V DS Drain to Source Voltage V V GS Gate to Source Voltage (Note 4) ±20 ±12 V
FDMC78S Dual N-Channel PowerTrench MOSFET : 3 V, A, 9. mω : 3 V, 6 A, 6.4 mω Features : N-Channel Max r DS(on) = 9. mω at V GS = V, I D = A Max r DS(on) =. mω at V GS = 4.5 V, I D = A : N-Channel Max r
More informationApplication. Inverter. H-Bridge. S2 Dual DPAK 4L
FDD8424H Dual N & P-Channel PowerTrench MOSFET N-Channel: V, A, 24mΩ P-Channel: -V, -A, 54mΩ Features : N-Channel Max r DS(on) = 24mΩ at V GS = V, I D = 9.A Max r DS(on) = mω at V GS = 4.5V, I D = 7.A
More information