Is Now Part of To learn more about ON Semiconductor, please visit our website at

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1 Is Now Part of To learn more about ON Semiconductor, please visit our website at ON Semiconductor and the ON Semiconductor logo are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor s product/patent coverage may be accessed at ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by ON Semiconductor. Typical parameters which may be provided in ON Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including Typicals must be validated for each customer application by customer s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FA Class medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.

2 June 29 FVN igital FET, N-Channel General escription This N-Channel logic level enhancement mode field effect transistor is produced using Fairchild's proprietary, high cell density, MOS technology. This very high density process is especially tailored to minimize on-state resistance. This device has been designed especially for low voltage applications as a replacement for digital transistors. Since bias resistors are not required, this one N-channel FET can replace several different digital transistors, with different bias resistor values. Features 25 V, 2 A continuous,.5 A Peak. R S(ON) = 5 V GS = 2.7 V R S(ON) = 4 V GS = 4.5 V. Very low level gate drive requirements allowing direct operation in V circuits. V GS(th) <.6V. Gate-Source Zener for ES ruggedness. >6kV Human Body Model Replace multiple NPN digital transistors with one MOS FET. SOT-2 SuperSOT TM -6 SuperSOT TM -8 SO-8 SOT-22 SOIC-6 Mark: INVERTER APPLICATION Vcc OUT IN G S G S GN Absolute Maximum Ratings T A = 25 o C unless other wise noted Symbol Parameter FVN Units V SS, V CC rain-source Voltage, Power Supply Voltage 25 V V GSS, V I Gate-Source Voltage, V IN 8 V I, I O rain/output Current - Continuous 2 A P Maximum Power issipation.5 W T J,T STG Operating and Storage Temperature Range -55 to 5 C ES Electrostatic ischarge Rating MIL-ST-88 Human Body Model (pf / 5 Ohm) THERMAL CHARACTERISTICS.5 6. kv R θja Thermal Resistance, Junction-to-Ambient 57 C/W 29 Fairchild Semiconductor Corporation FVN Rev.F

3 Inverter Electrical Characteristics (T A = 25 C unless otherwise noted) Symbol Parameter Conditions Min Typ Max Units I O (off) Zero Input Voltage Output Current V CC = 2 V, V I = V µa V I (off) Input Voltage V CC = 5 V, I O = µa.5 V V I (on) V O =. V, I O =.5 A V R O (on) Output to Ground Resistance V I = 2.7 V, I O = A 4 5 Ω Electrical Characteristics (T A = 25 O C unless otherwise noted ) Symbol Parameter Conditions Min Typ Max Units OFF CHARACTERISTICS BV SS rain-source Breakdown Voltage V GS = V, I = 25 µa 25 V BV SS / T J Breakdown Voltage Temp. Coefficient I = 25 µa, Referenced to 25 o C 25 mv / o C I SS Zero Gate Voltage rain Current V S = 2 V, V GS = V µa T J = 55 C µa I GSS Gate - Body Leakage Current V GS = 8 V, V S = V na ON CHARACTERISTICS (Note) V GS(th) / T J Gate Threshold Voltage Temp. Coefficient I = 25 µa, Referenced to 25 o C -2. mv / o C V GS(th) Gate Threshold Voltage V S = V GS, I = 25 µa V R S(ON) Static rain-source On-Resistance V GS = 2.7 V, I = A.8 5 Ω T J =25 C 6. 9 V GS = 4.5 V, I =.4 A. 4 I (ON) On-State rain Current V GS = 2.7 V, V S = 5 V A g FS Forward Transconductance V S = 5 V, I =.4 A S YNAMIC CHARACTERISTICS C iss Input Capacitance V S = V, V GS = V, 9.5 pf C oss Output Capacitance f =. MHz 6 pf C rss Reverse Transfer Capacitance. pf SWITCHING CHARACTERISTICS (Note) t (on) Turn - On elay Time V = 6 V, I =.5 A,.2 8 ns t r Turn - On Rise Time V GS = 4.5 V, R GEN = 5 Ω 6 5 ns t (off) Turn - Off elay Time.5 8 ns t f Turn - Off Fall Time.5 8 ns Q g Total Gate Charge V S = 5 V, I = A,.49.7 nc Q gs Gate-Source Charge V GS = 4.5 V 2 nc Q gd Gate-rain Charge.7 nc RAIN-SOURCE IOE CHARACTERISTICS AN MAXIMUM RATINGS I S Maximum Continuous rain-source iode Forward Current 9 A V S rain-source iode Forward Voltage V GS = V, I S = 9 A (Note).8.2 V Note: Pulse Test: Pulse Width < µs, uty Cycle < 2.%. FVN Rev.F

4 S Typical Electrical Characteristics I, RAIN-SOURCE CURRENT (A) V = 4.5V GS R S(on ), NORMALIZE RAIN-SOURCE ON-RESISTANCE V = 2.V GS V, RAIN-SOURCE VOLTAGE (V) S I, RAIN CURRENT (A) Figure. On-Region Characteristics. Figure 2. On-Resistance Variation with rain Current and Gate Voltage. R S(ON), NORMALIZE RAIN-SOURCE ON-RESISTANCE I = A V GS = 2.7 V T, JUNCTION TEMPERATURE ( C) J R S(on), ON-RESISTANCE (OHM) C 25 C V GS, GATE TO SOURCE VOLTAGE (V) I = A Figure. On-Resistance Variation with Temperature. Figure 4. On Resistance Variation with Gate-To-Source Voltage. I, RAIN CURRENT (A).5..5 V = 5.V S T = -55 C J 25 C 25 C V, GATE TO SOURCE VOLTAGE (V) GS I, REVERSE RAIN CURRENT (A).5... V GS = V T = 25 C J 25 C -55 C V, BOY IOE FORWAR VOLTAGE (V) S Figure 5. Transfer Characteristics. Figure 6. Body iode Forward Voltage Variation with Source Current and Temperature. FVN Rev.F

5 Typical Electrical And Thermal Characteristics V GS, GATE-SOURCE VOLTAGE (V) I = A Q g, GATE CHARGE (nc) Figure 7. Gate Charge Characteristics. V S = 5V V 5V CAPACITANCE (pf) f = MHz V GS = V V, RAIN TO SOURCE VOLTAGE (V) S Figure 8. Capacitance Characteristics. C iss C oss C rss I, RAIN CURRENT (A) RS(ON) LIMIT V GS = 2.7V SINGLE PULSE R θ JA = 57 C/W T A = 25 C V, RAI N-SOURCE VOLTAGE (V) S C s s ms ms POWER (W) SINGLE PULSE TIME (SEC) SINGLE PULSE R θja =57 C/W T A = 25 C Figure 9. Maximum Safe Operating Area. Figure. Single Pulse Maximum Power issipation..5 =.5 r(t), NORMALIZE EFFECTIVE TRANSIENT THERMAL RESISTANCE Single Pulse R θja (t) = r(t) * R θja R θja = 57 C/W T J - T = P * R (t) A θja uty Cycle, = t /t t, TIME (sec) P(pk) t t 2 Figure. Transient Thermal Response Curve. FVN Rev.F

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