FDMA510PZ. Single P-Channel PowerTrench MOSFET 20V, 7.8A, 30m. FDMA510PZ Single P-Channel PowerTrench MOSFET
|
|
- Whitney Morris
- 6 years ago
- Views:
Transcription
1 FMA50PZ Single P-Channel PowerTrench MOSFET 20V, 7.8A, 30m Features Max r S(on) = 30m at V GS = 4.5V, I = 7.8A Max r S(on) = 37m at V GS = 2.5V, I = 6.6A Max r S(on) = 50m at V GS =.8V, I = 5.5A Max r S(on) = 90m at V GS =.5V, I = 2.0A Low profile - 0.8mm maximum - in the new package MicroFET 2X2 mm HBM ES protection level > 3KV typical (Note 3) Free from halogenated compounds and antimony oxides RoHS Compliant Pin G General escription This device is designed specifically for battery charge or load switching in cellular handset and other ultraportable applications. It features a MOSFET with low on-state resistance. The MicroFET 2X2 package offers exceptional thermal performance for its physical size and is well suited to linear mode applications. Bottom rain Contact June 204 FMA50PZ Single P-Channel PowerTrench MOSFET rain Source G 3 4 S S MicroFET 2X2 (Bottom View) MOSFET Maximum Ratings T A = 25 C unless otherwise noted Symbol Parameter Ratings Units V S rain to Source Voltage 20 V V GS Gate to Source Voltage ±8 V rain Current -Continuous (Note a) 7.8 I -Pulsed 24 Power issipation (Note a) 2.4 P Power issipation (Note b) 0.9 T J, T STG Operating and Storage Junction Temperature Range 55 to +50 C Thermal Characteristics A W R JA Thermal Resistance, Junction to Ambient (Note a) 52 R JA Thermal Resistance, Junction to Ambient (Note b) 45 Package Marking and Ordering Information C/W evice Marking evice Package Reel Size Tape Width Quantity 50 FMA50PZ MicroFET 2X2 7 8mm 3000units FMA50PZ Rev.B3
2 Electrical Characteristics T J = 25 C unless otherwise noted Symbol Parameter Test Conditions Min Typ Max Units Off Characteristics BV SS rain to Source Breakdown Voltage I = 250 A, V GS = 0V 20 V BV SS Breakdown Voltage Temperature I T J Coefficient = 250 A, referenced to 25 C 3 mv/ C I SS Zero Gate Voltage rain Current V S = 6V, V GS = 0V A I GSS Gate to Source Leakage Current V GS = ±8V, V S = 0V ±0 A On Characteristics V GS(th) Gate to Source Threshold Voltage V GS = V S, I = 250 A V V GS(th) T J r S(on) Gate to Source Threshold Voltage Temperature Coefficient Static rain to Source On Resistance I = 250 A, referenced to 25 C 3 mv/ C V GS = 4.5V, I = 7.8A V GS = 2.5V, I = 6.6A V GS =.8V, I = 5.5A V GS =.5V, I = 2.0A V GS = 4.5V, I = 7.8A,T J = 25 C g FS Forward Transconductance V = 5V, I = 7.8A 26 S ynamic Characteristics C iss Input Capacitance pf V S = 0V, V GS = 0V, C oss Output Capacitance pf f = MHz C rss Reverse Transfer Capacitance pf Switching Characteristics t d(on) Turn-On elay Time 7 4 ns V = 0V, I = 7.8A t r Rise Time 9 8 ns V GS = 4.5V, R GEN = 6 t d(off) Turn-Off elay Time ns t f Fall Time ns Q g Total Gate Charge 9 27 nc V = 5V, I = 7.8A Q gs Gate to Source Charge 2. nc V GS = 4.5V Q gd Gate to rain Miller Charge 4.2 nc m FMA50PZ Single P-Channel PowerTrench MOSFET rain-source iode Characteristics I S Maximum Continuous rain-source iode Forward Current 2 A V S Source to rain iode Forward Voltage V GS = 0V, I S = 2A V t rr Reverse Recovery Time ns I F = 7.8A, di/dt = 00A/ s Q rr Reverse Recovery Charge 44 7 nc Notes:. R JA is determined with the device mounted on a in 2 pad 2 oz copper pad on a.5 x.5 in. board of FR-4 material. R JC is guaranteed by design while R CA is determined by the user's board design. a. 52 C/W when mounted on a in 2 pad of 2 oz copper. b. 45 C/W when mounted on a minimum pad of 2 oz copper. 2. Pulse Test: Pulse Width < 300 s, uty cycle < 2.0%. 3. The diode connected between the gate and source serves only as protection against ES. No gate overvoltage rating is implied. FMA50PZ Rev.B3 2
3 Typical Characteristics T J = 25 C unless otherwise noted -I, RAIN CURRENT (A) NORMALIZE RAIN TO SOURCE ON-RESISTANCE V GS = -4.5V Figure. I = -7.8A V GS = -4.5V V GS = -2.5V V GS = -2V V GS = -.8V V GS = -.5V PULSE URATION = 80 s UTY CYCLE = 0.5%MAX -V S, RAIN TO SOURCE VOLTAGE (V) NORMALIZE RAIN TO SOURCE ON-RESISTANCE.0 V PULSE URATION = 80 s GS =-4.5V UTY CYCLE = 0.5%MAX On-Region Characteristics Figure 2. Normalized On-Resistance vs rain Current and Gate Voltage T J, JUNCTION TEMPERATURE ( o C) rs(on), RAIN TO SOURCE ON-RESISTANCE (m ) V GS =-.5V V GS = -2.5V -I, RAIN CURRENT(A) V GS = -.8V V GS = -2V PULSE URATION = 80 s UTY CYCLE = 0.5%MAX I = -7.8A V GS, GATE TO SOURCE VOLTAGE (V) FMA50PZ Single P-Channel PowerTrench MOSFET Figure 3. Normalized On- Resistance vs Junction Temperature Figure 4. On-Resistance vs Gate to Source Voltage -I, RAIN CURRENT (A) PULSE URATION = 80 s UTY CYCLE = 0.5%MAX V = -5V T J = -55 o C T J = 50 o C V GS, GATE TO SOURCE VOLTAGE (V) Figure 5. Transfer Characteristics -IS, REVERSE RAIN CURRENT (A) V GS = 0V T J = 50 o C T J = -55 o C E V S, BOY IOE FORWAR VOLTAGE (V) Figure 6. Source to rain iode Forward Voltage vs Source Current FMA50PZ Rev.B3 3
4 Typical Characteristics T J = 25 C unless otherwise noted -VGS, GATE TO SOURCE VOLTAGE(V) -Ig, GATE LEAKAGE CURRENT(A) I = -7.8A Figure VS = 0V Figure 9. V = -3V V = -7V Q g, GATE CHARGE(nC) V = -5V V S, RAIN TO SOURCE VOLTAGE (V) Gate Charge Characteristics Figure 8. Capacitance vs rain to Source Voltage V GS, GATE TO SOURCE VOLTAGE (V) Gate Leakage Current vs Gate to Source Voltage CAPACITANCE (pf) -I, RAIN CURRENT (A) f = MHz V GS = 0V THIS AREA IS LIMITE BY r S(on) SINGLE PULSE T J = MAX RATE R JA = 45 o C/W T A = 25 o C C iss C oss C rss -V S, RAIN to SOURCE VOLTAGE (V) Figure 0. Forward Bias Safe Operating Area 00us ms 0ms 00ms s 0s C FMA50PZ Single P-Channel PowerTrench MOSFET P (PK), PEAK TRANSIENT POWER (W) SINGLE PULSE R JA = 45 o C/W T A = 25 o C V GS = -4.5V t, PULSE WITH (s) Figure. Single Pulse Maximum Power issipation FMA50PZ Rev.B3 4
5 Typical Characteristics T J = 25 C unless otherwise noted NORMALIZE THERMAL IMPEANCE, Z JA UTY CYCLE-ESCENING ORER = SINGLE PULSE R JA = 45 o C/W E t, RECTANGULAR PULSE URATION (s) Figure 2. Transient Thermal Response Curve P M t t 2 NOTES: UTY FACTOR: = t /t 2 PEAK T J = P M x Z JA x R JA + T A FMA50PZ Single P-Channel PowerTrench MOSFET FMA50PZ Rev.B3 5
6 imensional Outline and Pad Layout FMA50PZ Single P-Channel PowerTrench MOSFET Package drawings are provided as a service to customers considering Fairchild components. rawings may change in any manner without notice. Please note the revision and/or date on the drawing and contact a Fairchild Semiconductor representative to verify or obtain the most recent revision. Package specifications do not expand the terms of Fairchild's worldwide terms and conditions, specifically the warranty therein, which covers Fairchild products. Always visit Fairchild Semiconductor s online packaging area for the most recent package drawings: FMA50PZ Rev.B3 6
7 m TRAEMARKS The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is not intended to be an exhaustive list of all such trademarks. AccuPower AX-CAP * BitSiC Build it Now CorePLUS CorePOWER CROSSVOLT CTL Current Transfer Logic EUXPEE ual Cool EcoSPARK EfficentMax ESBC Fairchild Fairchild Semiconductor FACT Quiet Series FACT FAST FastvCore FETBench FPS F-PFS FRFET Global Power Resource SM GreenBridge Green FPS Green FPS e-series Gmax GTO IntelliMAX ISOPLANAR Marking Small Speakers Sound Louder and Better MegaBuck MICROCOUPLER MicroFET MicroPak MicroPak2 Millerrive MotionMax mwsaver OptoHiT OPTOLOGIC OPTOPLANAR tm PowerTrench PowerXS Programmable Active roop QFET QS Quiet Series RapidConfigure Saving our world, mw/w/kw at a time SignalWise SmartMax SMART START Solutions for Your Success SPM STEALTH SuperFET SuperSOT -3 SuperSOT -6 SuperSOT -8 SupreMOS SyncFET Sync-Lock * TinyBoost TinyBuck TinyCalc TinyLogic TINYOPTO TinyPower TinyPWM TinyWire TranSiC TriFault etect TRUECURRENT * μseres UHC Ultra FRFET UniFET VCX VisualMax VoltagePlus XS 仙童 FMA50PZ Single P-Channel PowerTrench MOSFET *Trademarks of System General Corporation, used under license by Fairchild Semiconductor. ISCLAIMER FAIRCHIL SEMICONUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PROUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION, OR ESIGN. FAIRCHIL OES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PROUCT OR CIRCUIT ESCRIBE HEREIN; NEITHER OES IT CONVEY ANY LICENSE UNER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. THESE SPECIFICATIONS O NOT EXPAN THE TERMS OF FAIRCHIL S WORLWIE TERMS AN CONITIONS, SPECIFICALLY THE WARRANTY THEREIN, WHICH COVERS THESE PROUCTS. LIFE SUPPORT POLICY FAIRCHIL S PROUCTS ARE NOT AUTHORIZE FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT EVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHIL SEMICONUCTOR CORPORATION. As used here in:. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body or (b) support or sustain life, and (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in a significant injury of the user. ANTI-COUNTERFEITING POLICY 2. A critical component in any component of a life support, device, or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. Fairchild Semiconductor Corporation s Anti-Counterfeiting Policy. Fairchild s Anti-Counterfeiting Policy is also stated on our external website, under Sales Support Counterfeiting of semiconductor parts is a growing problem in the industry. All manufactures of semiconductor products are experiencing counterfeiting of their parts. Customers who inadvertently purchase counterfeit parts experience many problems such as loss of brand reputation, substandard performance, failed application, and increased cost of production and manufacturing delays. Fairchild is taking strong measures to protect ourselves and our customers from the proliferation of counterfeit parts. Fairchild strongly encourages customers to purchase Fairchild parts either directly from Fairchild or from Authorized Fairchild istributors who are listed by country on our web page cited above. Products customers buy either from Fairchild directly or from Authorized Fairchild istributors are genuine parts, have full traceability, meet Fairchild s quality standards for handing and storage and provide access to Fairchild s full range of up-to-date technical and product information. Fairchild and our Authorized istributors will stand behind all warranties and will appropriately address and warranty issues that may arise. Fairchild will not provide any warranty coverage or other assistance for parts bought from Unauthorized Sources. Fairchild is committed to combat this global problem and encourage our customers to do their part in stopping this practice by buying direct or from authorized distributors. PROUCT STATUS EFINITIONS efinition of Terms atasheet Identification Product Status efinition Advance Information Formative / In esign atasheet contains the design specifications for product development. Specifications may change in any manner without notice. Preliminary No Identification Needed First Production Full Production atasheet contains preliminary data; supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve design. atasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve the design. Obsolete Not In Production atasheet contains specifications on a product that is discontinued by Fairchild Semiconductor. The datasheet is for reference information only. Rev. I68 7 FMA50PZ Rev.B3
FDC655BN Single N-Channel, Logic Level, PowerTrench MOSFET
FC655BN Single N-Channel, Logic Level, PowerTrench MOSFET 3 V, 6.3 A, 5 mω Features Max r S(on) = 5 mω at V GS = V, I = 6.3 A Max r S(on) = 33 mω at V GS =.5 V, I = 5.5 A Fast switching Low gate charge
More informationFDC610PZ P-Channel PowerTrench MOSFET
FC6PZ P-Channel PowerTrench MOSFET 3V, 4.9A, 4mΩ Features Max r S(on) = 4mΩ at V GS = V, I = 4.9A Max r S(on) = 7mΩ at V GS = 4.V, I = 3.7A Low gate charge (7nC typical). High performance trench technology
More informationApplications. Load Switch Primary Switch
FT8 N-Channel Power Trench MOSFET 5 V,.8 A, 8 mω Features Max r S(on) = 8 mω at V GS = V, I =.8 A Max r S(on) = 78 mω at V GS = V, I =. A High performance trench technology for extremely low r S(on) High
More informationFDS6679AZ P-Channel PowerTrench MOSFET -30V, -13A, 9mΩ General Description
FS6679AZ P-Channel PowerTrench MOSFET -3V, -3A, 9mΩ General escription This P-Channel MOSFET is producted using Fairchild Semiconductor s advanced PowerTrench process that has been especially tailored
More informationApplications. Top. Pin 1 D D 8. Symbol Parameter Ratings Units V DS Drain to Source Voltage -30 V V GS Gate to Source Voltage ±25 V
FMC4435BZ P-Channel Power Trench MOSFET -V, -8A,.mΩ Features Max r S(on) =.mω at V GS = -V, I = -8.5A Max r S(on) = 37.mΩ at V GS = -4.5V, I = -6.3A Extended V GSS range (-5V) for battery applications
More informationFDMA1023PZ Dual P-Channel PowerTrench MOSFET
FDMA0PZ Dual P-Channel PowerTrench MOSFET 0V,.7A, 7m Features Max r DS(on) = 7m at V GS =.V, I D =.7A Max r DS(on) = 9m at V GS =.V, I D =.A Max r DS(on) = 0m at V GS =.8V, I D =.0A Max r DS(on) = 9m at
More informationFGD V PDP Trench IGBT
FGD4536 360 V PDP Trench IGBT Features High Current Capability Low Saturation Voltage: V CE(sat) = 1.59 V @ I C = 50 A High Input Impedance Fast Switching RoHS Compliant Applications PDP TV, Consumer Appliances
More informationFDMB2308PZ Dual Common Drain P-Channel PowerTrench MOSFET
FDMB38PZ Dual Common Drain P-Channel PowerTrench MOSFET - V, -7 A, 36 mω Features Max r SS(on) = 36 mω at V GS = -4.5 V, I D = -5.7 A Max r SS(on) = 5 mω at V GS = -.5 V, I D = -4.6 A Low Profile -.8 mm
More informationBAT54HT1G Schottky Barrier Diodes
BAT54HT1G Schottky Barrier Diodes 1 A2 Connection Diagram 1 July 2013 SOD-323 2 2 Ordering Information Part Number Marking Package Packing Method BAT54HT1G A2 SOD-323 2L Tape and Reel Absolute Maximum
More informationFDMA1032CZ 20V Complementary PowerTrench MOSFET
FDMACZ V Complementary PowerTrench MOSFET General Description This device is designed specifically as a single package solution for a DC/DC 'Switching' MOSFET in cellular handset and other ultra-portable
More informationFDD86252 N-Channel PowerTrench MOSFET 150 V, 27 A, 52 m Features
FDD86 N-Channel PowerTrench MOSFET V, 7 A, m Features Max r DS(on) = m at V GS = V, I D = A Max r DS(on) = 7 m at V GS = 6 V, I D = 4 A % UIL tested RoHS Compliant General Description September This N-Channel
More information2N7002W N-Channel Enhancement Mode Field Effect Transistor
2N7002W N-Channel Enhancement Mode Field Effect Transistor Features Low On-Resistance Low Gate Threshold Voltage Low Input Capacitance Fast Switching Speed Low Input/Output Leakage Ultra-Small Surface
More informationFQD7N30 N-Channel QFET MOSFET
FQD7N30 N-Channel QFET MOSFET 300 V, 5.5 A, 700 mω Description This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor s proprietary planar stripe and DMOS technology. This
More informationFDFMA2P857. Integrated P-Channel PowerTrench MOSFET and Schottky Diode. FDFMA2P857 Integrated P-Channel PowerTrench MOSFET and Schottky Diode
FDFMAP87 Integrated P-Channel PowerTrench MOSFET and Schottky Diode 0V,.0A, 0mΩ Features MOSFET: Max r DS(on) = 0mΩ at V GS =.V, I D =.0A Max r DS(on) = 60mΩ at V GS =.V, I D =.A Max r DS(on) = 0mΩ at
More informationLL4148 Small Signal Diode
LL4148 Small Signal Diode Cathode Band COLOR BAND MARKING 1ST BAND Black April 2013 SOD80 The 1st Band indicates the cathode band Package Marking and Ordering Information Device Marking Device Package
More informationFDMB2307NZ Dual Common Drain N-Channel PowerTrench MOSFET
FDMB237NZ Dual Common Drain N-Channel PowerTrench MOSFET 2 V, 9.7 A, 6.5 mω Features Max r SS2(on) = 6.5 mω at V GS = 4.5 V, I D = 8 A Max r SS2(on) = 8 mω at V GS = 4.2 V, I D = 7.4 A Max r SS2(on) =
More informationFDMA507PZ Single P-Channel PowerTrench MOSFET
FDMA57PZ Single P-Channel PowerTrench MOSFET -2 V, -7.8 A, 2 mω Features Max r DS(on) = 2 mω at, I D = -7.8 A Max r DS(on) = 25 mω at V GS = -.5 V, I D = -7 A Max r DS(on) = 35 mω at V GS = -2.5 V, I D
More informationFeatures. TA=25 o C unless otherwise noted
P-Channel.V Specified PowerTrench MOSFET November General Description This P-Channel.V specified MOSFET uses Fairchild s advanced low voltage PowerTrench process. It has been optimized for battery power
More informationFQD5N15 N-Channel QFET MOSFET
FQD5N15 N-Channel QFET MOSFET 150 V, 4.3 A, 800 mω Description This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor s proprietary planar stripe and DMOS technology. This
More informationJ105 / J106 / J107 N-Channel Switch
J105 / J106 / J107 N-Channel Switch Description This device is designed for analog or digital switching applications where very low on resistance is mandatory. Sourced from Process 59. September 2013 Ordering
More informationFDMA908PZ. Single P-Channel PowerTrench MOSFET. FDMA908PZ Single P-Channel PowerTrench MOSFET. -12 V, -12 A, 12.5 mω Features. General Description
FMA908PZ Single P-Channel PowerTrench MOSFET -2 V, -2 A, 2.5 mω Features Max r S(on) = 2.5 mω at V GS = -4.5 V, I = -2 A Max r S(on) = 8 mω at V GS = -2.5 V, I = -0 A Max r S(on) = 28 mω at V GS = -.8
More informationBSS138W N-Channel Logic Level Enhancement Mode Field Effect Transistor
December 2010 BSS138W N-Channel Logic Level Enhancement Mode Field Effect Transistor General Description These N-Channel enhancement mode field effect transistor. These products have been designed to minimize
More informationApplications. S1 Power 33
FDMC83 Dual N-Channel Power Trench MOSFET V, A, mω Features Max r DS(on) = mω at V GS = V, I D = A Max r DS(on) = mω at V GS =. V, I D = A Max r DS(on) = 8 mω at V GS = 3. V, I D = A Termination is Lead-free
More informationFDV303N Digital FET, N-Channel
July 4 FV33N igital FET, N-Channel General escription These N-Channel enhancement mode field effect transistors are produced using Fairchild's proprietary, high cell density, MOS technology. This very
More informationDescription G D TO-220. Symbol Parameter FDP7N50 Unit. Maximum Lead Temperature for Soldering Purpose, 300 C 1/8 from Case for 5 Seconds
FDP7N50 N-Channel UniFET TM MOSFET 500 V, 7 A, 900 m Features R DS(on) = 900 m (Max.) @ = 10 V, = 3.5 A Low Gate Charge (Typ. 12.8 nc) Low C rss (Typ. 9 pf) 100% Avalanche Tested Applications ALCD/LED
More information2N7000BU / 2N7000TA Advanced Small-Signal MOSFET
2N7000BU / 2N7000TA Advanced Small-Signal MOSFET Features Fast Switching Times Improved Inductive Ruggedness Lower Input Capacitance Extended Safe Operating Area Improved High-Temperature Reliability 1
More informationSymbol Parameter Ratings Units V DS Drain to Source Voltage 20 V V GS Gate to Source Voltage ±8 V -Continuous T
FDGNZ Dual N-Channel PowerTrench MOSFET V,. A, 7 mω Features Max r DS(on) = 7 mω at V GS =. V, I D =. A Max r DS(on) = mω at V GS =. V, I D =. A Max r DS(on) = 7 mω at V GS =.8 V, I D =.9 A Max r DS(on)
More informationBAT54SWT1G / BAT54CWT1G Schottky Diodes
BAT54SWT1G / BAT54CWT1G Schottky Diodes SOT-2 1 2 MARKING BAT54SWT1G = YB BAT54CWT1G = YC November 2015 Connection Diagram BAT54SWT1G BAT54CWT1G 1 2 1 2 Ordering Information Part Number Top Mark Package
More informationFDMS2734 N-Channel UltraFET Trench MOSFET 250V, 14A, 122mΩ Features
FMS7 N-Channel UltraFET Trench MOSFET 5V, A, mω Features Max r S(on) = mω at V GS = V, I =.8A Max r S(on) = mω at V GS = V, I =.7A Low Miller Charge Optimized efficiency at high frequencies RoHS Compliant
More informationDescription TO-220F. Symbol Parameter FDPF7N50U Unit. Maximum Lead Temperature for Soldering Purpose, 300 C 1/8 from Case for 5 Seconds
FDPF7N50U N-Channel UniFET TM Ultra FRFET TM MOSFET 500 V, 5 A, 1.5 Features R DS(on) = 1.5 (Max.) @ = 10 V, = 2.5 A Low Gate Charge (Typ.12.8 nc) Low C rss (Typ. 9 pf) 100% Avalanche Tested Improved dv/dt
More informationBAV103 High Voltage, General Purpose Diode
BAV3 High Voltage, General Purpose Diode Cathode Band SOD80 Description April 2013 A general purpose diode that couples high forward conductance fast swiching speed and high blocking voltages in a glass
More informationBAT54 / BAT54A / BAT54C / BAT54S Schottky Diodes
BAT54 / BAT54A / BAT54C / BAT54S Schottky Diodes 1 SOT-2 Ordering Information 2 L4P 1 2 MARKING BAT54 = L4P BAT54A = L42 BAT54C = L4 BAT54S = L44 November 2014 Connection Diagram BAT54 BAT54A 1 2NC 1 2
More informationFGH75N60UF 600 V, 75 A Field Stop IGBT
FGH75N6UF 6 V, 75 A Field Stop IGBT Features High Current Capability Low Saturation Voltage: V CE(sat) =.9 V @ I C = 75 A High Input Impedance Fast Switching RoHS Compliant Applications Solar Inverter,
More informationFDS8949_F085 Dual N-Channel Logic Level PowerTrench MOSFET
February FDS899_F85 Dual N-Channel Logic Level PowerTrench MOSFET V, 6A, 9mΩ Features Max r DS(on) = 9mΩ at V GS = V Max r DS(on) = 36mΩ at V GS =.5V Low gate charge High performance trench technology
More informationFDH / FDLL 300 / A / 333 High Contraction Low Leakage Diode
FDH / FDLL 300 / A / 333 High Contraction Low Leakage Diode DO-35 Cathode is denoted with a black band Cathode Band LL-34 SOD80 THE PLACEMENT OF THE EXPANSION GAP HAS NO RELATIONSHIP TO THE LOCATION OF
More information1N/FDLL 914A/B / 916/A/B / 4148 / 4448 Small Signal Diode
1N/FDLL 914A/B / 916/A/B / 4148 / 4448 Small Signal Diode DO-35 Cathode is denoted with a black band LL-34 THE PLACEMENT OF THE EXPANSION GAP HAS NO RELATIONSHIP TO THE LOCATION OF THE CATHODE TERMINAL
More informationFQD7P20 P-Channel QFET MOSFET
FQD7P20 P-Channel QFET MOSFET -200 V, -5.7 A, 690 mω Description This P-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor s proprietary planar stripe and DMOS technology.
More informationApplications. Symbol Parameter Q1 Q2 Units V DS Drain to Source Voltage V V GS Gate to Source Voltage (Note 4) ±20 ±12 V
FDMC78S Dual N-Channel PowerTrench MOSFET : 3 V, A, 9. mω : 3 V, 6 A, 6.4 mω Features : N-Channel Max r DS(on) = 9. mω at V GS = V, I D = A Max r DS(on) =. mω at V GS = 4.5 V, I D = A : N-Channel Max r
More informationFDT3N40 N-Channel UniFET TM MOSFET 400 V, 2.0 A, 3.4 Features
FDT3N40 N-Channel UniFET TM MOSFET 400 V, 2.0 A, 3.4 Features R DS(on) = 3.4 Ω (Max.) @ V GS = 10 V, = 1.0 A Low Gate Charge (Typ. 4.5 nc) Low Crss (Typ. 3.7 pf) 100% Avalanche Tested Applications LCD/LED
More informationJ175 / J176 / MMBFJ175 / MMBFJ176 / MMBFJ177 P-Channel Switch
J7 / J76 / MMBFJ7 / MMBFJ76 / MMBFJ77 P-Channel Switch escription This device is designed for low-level analog switching sample-and-hold circuits and chopper-stabilized amplifiers. Sourced from process
More informationFJN4303R PNP Epitaxial Silicon Transistor with Bias Resistor
FJN4303R PNP Epitaxial Silicon Transistor with Bias Resistor Features 100 ma Output Current Capability Built-in Bias Resistor (R 1 = 22 kω, R 2 = 22 kω) Application Switching, Interface, and Driver Circuits
More informationPart Number Top Mark Package Packing Method
KSA3 PNP Epitaxial Silicon Transistor Features Color TV Audio Output Color TV Vertical Deflection Output September 203 TO-92L. Emitter 2. Collector 3. Base Ordering Information Part Number Top Mark Package
More information1N4934-1N4937 Fast Rectifiers
N4934 - N4937 Fast Rectifiers Features Low Forward Voltage Drop High Surge Current Capability High Reliability High Current Capability DO-4 COLOR BAND DENOTES CATHODE January 25 N4934 - N4937 Fast Rectifiers
More informationFDB8860 N-Channel Logic Level PowerTrench MOSFET. 30V, 80A, 2.6mΩ. Features. Applications. December R DS(ON) = 1.9mΩ (Typ), V GS = 5V, I D = 80A
FDB886 N-Channel Logic Level PowerTrench MOSFET 3V, 8A, 2.6mΩ Features R DS(ON) =.9mΩ (Typ), V GS = 5V, I D = 8A Q g(5) = 89nC (Typ), V GS = 5V Low Miller Charge Low Q RR Body Diode UIS Capability (Single
More informationApplication. Inverter. H-Bridge. S2 Dual DPAK 4L
FDD8424H Dual N & P-Channel PowerTrench MOSFET N-Channel: V, A, 24mΩ P-Channel: -V, -A, 54mΩ Features : N-Channel Max r DS(on) = 24mΩ at V GS = V, I D = 9.A Max r DS(on) = mω at V GS = 4.5V, I D = 7.A
More informationFGA20N120FTD 1200 V, 20 A Field Stop Trench IGBT
FGA2N2FTD 2 V, 2 A Field Stop Trench IGBT Features Field Stop Trench Technology High Speed Switching Low Saturation Voltage: V CE(sat) =.6 V @ I C = 2 A High Input Impedance RoHS Compliant Applications
More informationFeatures. Max r DS(on) = 50 V GS = -10 V, I D = -4A. Max r DS(on) = 75 V GS = -4.5 V, I D = -3.4A. RoHS Compliant
FC58AP Single P-Channel Logic Level PowerTrench MOSFET -3V, -A, 5mΩ General escription This P-Channel Logic Level MOSFET is produced using Fairchild's advanced PowerTrench process. It has been optimized
More informationFJB102 NPN High-Voltage Power Darlington Transistor
FJB102 NPN High-Voltage Power Darlington Transistor Features High DC Current Gain : h FE = 0 at = 4 V, = 3 A (Minimum) Low Collector-Emitter Saturation Voltage 1 D 2 -PAK 1.Base 2.Collector 3.Emitter B
More informationFeatures G G SOT-223. Symbol Parameter FQT1N60C Unit V DSS Drain to Source Voltage 600 V V GSS Gate to Source Voltage ±30 V
FQT1N60C N-Channel QFET MOSFET 600V, 0.2 A, 11.5 Ω Description This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor s proprietary planar stripe and DMOS technology. This
More informationFJA13009 High-Voltage Switch Mode Application
FJA3009 High-Voltage Switch Mode Application Features High-Speed Switching Suitable for Switching Regulator and Motor Control Ordering Information July 203 Part Number Marking Package Packing Method FJA3009TU
More informationApplications. Bottom. Pin 1 S1/S2 G1 D1 D1 D1. Symbol Parameter Ratings Units V DS Drain to Source Voltage 100 V V GS Gate to Source Voltage ±20 V
FDMD8 Dual N-Channel PowerTrench MOSFET V, A, mω Features Max r DS(on) = mω at V GS = V, I D = 7 A Max r DS(on) = 3 mω at V GS = 6 V, I D = 5.5 A Ideal for flexible layout in secondary side synchronous
More informationBSS138K N-Channel Logic Level Enhancement Mode Field Effect Transistor
May 2013 BSS138K N-Channel Logic Level Enhancement Mode Field Effect Transistor Features Low On-Resistance Low Gate Threshold Voltage Low Input Capacitance Fast Switching Speed Low Input/Output Leakage
More informationDescription. Symbol Parameter FCB20N60TM Unit V DSS Drain to Source Voltage 600 V. - Continuous (T C = 25 o C) 20 - Continuous (T C = 100 o C) 12.
FCB20N60 N-Channel SuperFET MOSFET 600 V, 20 A, 190 mω Features 650 V @T J = 150 C Typ. R DS(on) = 150 m Ultra Low Gate Charge (Typ. Q g = 75 nc) Low Effective Output Capacitance (Typ. C oss.eff = 165
More informationFDMJ1032C. Dual N & P-Channel PowerTrench MOSFET N-Channel: 20V, 3.2A, 90mΩ P-Channel: -20V, -2.5A, 160mΩ
FDMJC Dual N & P-Channel PowerTrench MOSFET N-Channel: V,.A, 9mΩ P-Channel: -V, -.5A, mω Features : N-Channel Max r DS(on) = 9mΩ at V GS =.5V, I D =.A Max r DS(on) = mω at V GS =.5V, I D =.5A : P-Channel
More informationRURG3020CC. 30 A, 200 V, Ultrafast Dual Diode. Features. Description. Applications. Packaging. Ordering Information. Symbol. Data Sheet November 2013
RURG32CC Data Sheet November 23 3 A, 2 V, Ultrafast Dual Diode Description The RURG32CC is an ultrafast dual diode with low forward voltage drop. This device is intended for use as freewheeling and clamping
More informationFQD5P10 P-Channel QFET MOSFET
FQD5P10 P-Channel QFET MOSFET -100 V, -3.6 A, 1.05 Description This P-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor s proprietary planar stripe and DMOS technology. This
More informationDescription G D TO-220. Symbol Parameter FDP61N20 Unit. Maximum Lead Temperature for Soldering Purpose, 300 C 1/8 from Case for 5 Seconds
FDP61N20 N-Channel UniFET TM MOSFET 200 V, 61 A, 41 m Features R DS(on) = 41 m (Max.) @ = 10 V, ID = 30.5 A Low Gate Charge (Typ. 58 nc) Low C rss (Typ. 80 pf) 100% Avalanche Tested Applications PDP TV
More informationKSP2222A NPN General-Purpose Amplifier
KSP2222A NPN General-Purpose Amplifier Features Collector-Emitter Voltage: V CEO = 40 V Available as PN2222A November 2014 TO-92 1 2 3 1. Emitter 2. Base 3. Collector Ordering Information Part Number Marking
More informationJ309 / J310 / MMBFJ309 / MMBFJ310 N-Channel RF Amplifier
J / J / MMBFJ / MMBFJ N-Channel RF Amplifier Features This device is designed for VHF/UHF amplifier, oscillator and mixer applications. As a common gate amplifier, 16 db at 100 MHz and 12 db at 450 MHz
More informationBAV ma 70 V High Conductance Ultra-Fast Switching Diode
April 2014 BAV99 200 ma 70 V High Conductance Ultra-Fast Switching Diode Features High Conductance: I F = 200 ma Fast Switching Speed: t rr < 6 ns Maximum Small Plastic SOT-2 Package Series-Pair Configuration
More informationFDP3651U N-Channel PowerTrench MOSFET 100 V, 80 A, 18 mω Features
FDP365U N-Channel PowerTrench MOSFET V, 8 A, 8 mω Features Applications March 3 R DS(on) = 5 mω ( Typ.)@ V GS = V, I D = 8 A Consumer Appliances High Performance Trench Technology for Extremely Low RDS(on)
More informationTIP47 / TIP48 / TIP49 / TIP50 NPN Silicon Transistor
TIP47 / TIP48 / TIP49 / TIP50 NPN Silicon Transistor Features High-Voltage and Switching Applications High Sustaining Voltage: V CEO (sus) = 250 V, 300 V, 350 V, 400 V 1 A Rated Collector Current Ordering
More informationFGPF V PDP Trench IGBT
FGPF4536 36 V PDP Trench IGBT Features High Current Capability Low Saturation Voltage: V CE (sat) =.59 V @ I C = 5 A High Input Impedance Fast Switching RoHS Compliant Applications PDP TV, Consumer appliances,
More informationFQP30N06L N-Channel QFET MOSFET 60 V, 32 A, 35 m
FQP30N06L N-Channel QFET MOSFET 60 V, 32 A, 35 m Description This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor s proprietary planar stripe and DMOS technology. This
More informationKSA473 PNP Epitaxial Silicon Transistor
KSA473 PNP Epitaxial Silicon Transistor Features Low Frequency Power Amplifier, Power Regulator Collector Current : = -3A Collector Dissipation : P C = 10W (T C =25 C) Complement to KSC1173 August 2009
More informationApplications. Symbol Parameter Ratings Units V DS Drain to Source Voltage 100 V V GS Gate to Source Voltage ±20 V
FDD386 N-Channel PowerTrench MOSFET V, 9A, 36mΩ Features Max r DS(on) = 36mΩ at V GS = V, I D = 5.9A High performance trench technology for extremely low r DS(on) % UIL tested RoHS Compliant General Description
More informationFQT7N10L N-Channel QFET MOSFET 100 V, 1.7 A, 350 mω
FQT7N10L N-Channel QFET MOSFET 100 V, 1.7 A, 350 mω Description This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor s proprietary planar stripe and DMOS technology. This
More informationKSD1621 NPN Epitaxial Silicon Transistor
KSD62 NPN Epitaxial Silicon Transistor Features High Current Driver Applications Low Collector-Emitter Saturation Voltage Large Current Capacity and Wide SOA Fast Switching Speed Complement to KSB2 Marking
More informationN-Channel QFET MOSFET 150 V, 50 A, 42 mω
FQA46N15 / FQA46N15_F109 N-Channel QFET MOSFET 150 V, 50 A, 42 mω Description This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor s proprietary planar stripe and DMOS
More informationBC327 PNP Epitaxial Silicon Transistor
BC327 PNP Epitaxial Silicon Transistor Features Switching and Amplifier Applications Suitable for AF-Driver Stages and Low-Power Output Stages Complement to BC337 / BC338 October 2014 1 TO-92 1. Collector
More informationFGH30S130P 1300 V, 30 A Shorted-anode IGBT
FGH3S3P 3 V, 3 A Shorted-anode IGBT Features High Speed Switching Low Saturation Voltage: V CE(sat) =.75 V @ I C = 3 A High Input Impedance RoHS Compliant Applications Induction Heating, Microwave Oven
More informationFQP17P06 P-Channel QFET MOSFET - 60 V, - 17 A, 120 m
FQP17P06 P-Channel QFET MOSFET - 60 V, - 17 A, 120 m Description This P-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor s proprietary planar stripe and DMOS technology.
More informationFQA9P25 P-Channel QFET MOSFET
FQA9P25 P-Channel QFET MOSFET - 250 V, -10.5 A, 620 mω Description This P-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor s proprietary planar stripe and DMOS technology.
More informationKSC1815 NPN Epitaxial Silicon Transistor
KSC85 NPN Epitaxial Silicon Transistor Features Audio Frequency Amplifier & High Frequency OSC Complement to KSA5 Collector-Base Voltage: V CBO = 50 V TO-92 April 203. Emitter 2. Collector 3. Base Ordering
More informationFJP13007 High Voltage Fast-Switching NPN Power Transistor
FJP3007 High Voltage Fast-Switching NPN Power Transistor Features High Voltage High Speed Power Switch Application High Voltage Capability High Switching Speed Suitable for Electronic Ballast and Switching
More informationJune 2014 FQA140N10 N-Channel QFET MOSFET. Features. 140 A, 100 V, R DS(on) = 10 mω V GS = 10 V, TO-3PN
FQA140N10 N-Channel QFET MOSFET 100 V, 140 A, 10 mω Description This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor s proprietary planar stripe and DMOS technology. This
More informationFGA50N100BNTD V NPT Trench IGBT
FGA5NBNTD2 V NPT Trench IGBT Features High Speed Switching Low Saturation Voltage : V CE(sat) = 2.5 V @ I C = 6 A High Input Impedance Built-in Fast Recovery Diode RoHS Compliant Applications UPS, Welder
More informationDescription D S. Symbol Parameter FDA38N30 Unit. Symbol Parameter FDA38N30 Unit
FDA38N30 N-Channel UniFET TM MOSFET 300 V, 38 A, 85 m Features R DS(on) = 70 m (Typ.) @ = 10 V, I D = 19 A Low Gate Charge (Typ. 60 nc) Low C rss (Typ. 60 pf) 100% Avalanche Tested ESD Improved Capability
More informationFDPF16N50UT N-Channel UniFET TM Ultra FRFET TM MOSFET
FDPF16N50UT N-Channel UniFET TM Ultra FRFET TM MOSFET 500 V, 15 A, 480 mω Features R DS(on) = 370 mω ( Typ.) @ = 10 V, = 7.5 A Low Gate Charge (Typ. 32 nc) Low C rss (Typ. 20 pf) 100% Avalanche Tested
More informationFDB5800 N-Channel Logic Level PowerTrench MOSFET
FDB58 N-Channel Logic Level PowerTrench MOSFET 6 V, 8 A, 6 mω Features R DS(on) = 4.6 mω (Typ.), V GS = 1 V, I D = 8 A High Performance Trench Technology for Extermly Low R DS(on) Low Gate Charge High
More informationDescription. Symbol Parameter FDH45N50F_F133 Unit. Maximum Lead Temperature for Soldering Purpose, 300 C 1/8 from Case for 5 Seconds
FDH45N5F_F133 N-Channel UniFET TM FRFET MOSFET 5 V, 45 A, 12 m Features R DS(on) = 12 m (Max.) @ = 1 V, = 22.5 A Low Gate Charge (Typ. 15 nc) Low C rss (Typ. 62 pf) 1% Avalanche Tested Improved dv/dt Capability
More informationFDP054N10 N-Channel PowerTrench MOSFET
FDP054N0 N-Channel PowerTrench MOSFET V, 44A, 5.5mΩ Features R DS(on) = 4.6mΩ ( Typ.)@ V GS = 0V, I D = 75A Fast Switching Speed Low Gate Charge High Performance Trench Technology for Extremely Low R DS(on)
More informationFFD10UP20S 10 A, 200 V, Ultrafast Diode
FFDUPS A, V, Ultrafast Diode Features Ultrafast Recovery, T rr =.8 ns (@ I F = A) Max Forward Voltage, V F =.5 V (@ T C = 5 C) Reverse Voltage : V RRM = V Avalanche Energy Rated RoHS Compliant Applications
More informationFDB28N30 N-Channel UniFET TM MOSFET 300 V, 28 A, 129 m Features
FDB28N30 N-Channel UniFET TM MOSFET 300 V, 28 A, 29 m Features R DS(on) = 08 m (Typ.) @ V GS = 0 V, I D = 4 A Low Gate Charge (Typ. 39 nc) Low Crss (Typ. 35 pf) 00% Avalanche Tested RoHS Compliant Applications
More informationFCP36N60N N-Channel MOSFET 600V, 36A, 90mΩ Features
FCP36N60N N-Channel MOSFET 600V, 36A, 90mΩ Features R DS(on) = 81mΩ ( Typ.)@ V GS = 10V, I D = 18A Ultra low gate charge ( Typ. Qg = 86nC) Low effective output capacitance 100% avalanche tested RoHS compliant
More informationFeatures. Packaging. 12 A Square Wave, 20 khz Nonrepetitive Peak Surge Current... I FSM
RURD2CCS9A Data Sheet November 23 2 A, 2 V, Ultrafast Dual Diode The RURD2CCS9A is an ultrafast dual diode with low forward voltage drop. This device is intended for use as freewheeling and clamping diodes
More informationFQPF22P10 P-Channel QFET MOSFET -100 V, A, 125 mω
FQPF22P10 P-Channel QFET MOSFET -100 V, -13.2 A, 125 mω Description This P-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor s proprietary planar stripe and DMOS technology.
More informationFDD V P-Channel PowerTrench MOSFET 40V, 32A, 27mΩ Features
FDD4685 V P-Channel PowerTrench MOSFET V, 32A, 27mΩ Features Max r DS(on) = 27mΩ at V GS = 0V, I D = 8.4A Max r DS(on) = 35mΩ at V GS = 4.5V, I D = 7A High performance trench technology for extremely low
More informationFQD12N20 / FQU12N20 N-Channel QFET MOSFET
FQD12N20 / FQU12N20 N-Channel QFET MOSFET 200 V, 9 A, 280 mω Description This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor s proprietary planar stripe and DMOS technology.
More informationKSA1281 PNP Epitaxial Silicon Transistor
KSA1281 PNP Epitaxial Silicon Transistor Features Audio Power Amplifier 3 W Output Application October 2014 1 TO-92L 1. Emitter 2. Collector 3. Base KSA1281 PNP Epitaxial Silicon Transistor Ordering Information
More informationDescription TO-3PN. Symbol Parameter FDA20N50_F109 Unit. A A I DM Drain Current - Pulsed (Note 1)
FDA20N50_F109 N-Channel UniFET TM MOSFET 500 V, 20 A, 230 m Features R DS(on) = 230 m (Max.) @ = 10 V, = 10 A Low Gate Charge (Typ. 45.6 nc) Low C rss (Typ. 27 pf) 100% Avalanche Tested Improved dv/dt
More informationTIP147T PNP Epitaxial Silicon Darlington Transistor
TIP147T PNP Epitaxial Silicon Darlington Transistor Features Monolithic Construction with Built-in Base-Emitter Shunt Resistors High DC Current Gain: h FE = 1000 at = -4 V, = -5 A (Minimum) Industrial
More informationKA431S / KA431SA / KA431SL Programmable Shunt Regulator
/ A / L Programmable Shunt Regulator Features Programmable Output Voltage to 36 V Low Dynamic Output Impedance.2 Ω (Typical) Sink Current Capability: 1. to 1 ma Equivalent Full-Range Temperature Coefficient
More informationFJP13009 High-Voltage Fast-Switching NPN Power Transistor
FJP3009 High-Voltage Fast-Switching NPN Power Transistor Features High-Voltage Capability High Switching Speed Applications Electronic Ballast Switching Regulator Motor Control Switched Mode Power Supply
More informationFYP2010DN Schottky Barrier Rectifier
FYP20DN Schottky Barrier Rectifier Features Low forward voltage drop High frequency properties and switching speed Guard ring for over-voltage protection.anode August 2009 FYP20DN Schottky Barrier Rectifier
More informationFGD V, PDP IGBT
FGD4536 36V, PDP IGBT Features High Current Capability Low Saturation Voltage: V CE (sat) =.59 V @ I C = 5 A High Input Impedance Fast Switching RoHS Compliant Application PDP System General Description
More informationBAS16 Small Signal Diode
BAS6 Small Signal Diode February 205 2 A6 2 Connection Diagram 2NC SOT-2 Ordering Information Part Number Top Mark Package Packing Method BAS6 A6 SOT-2 L Tape and Reel, 7 inch Reel, 000 pcs BAS6_D87Z A6
More informationDescription. TO-220F-2L 1. Cathode 2. Anode 1. Cathode 2. Anode
FFPF3UP2S 3 A, 2 V, Ultrafast Diode Features Ultrafast Recovery t rr = 5 (@ I F = 3 A) Max Forward Voltage, V F =.5 V (@ = 25 C) Reverse Voltage, V RRM = 2 V Avalanche Energy Rated RoHS Compliant Description
More informationFFD08S60S_F085. Features. FFD08S60S_F085 Stealth 2 Rectifier. 8A, 600V Stealth2 Rectifier. Absolute Maximum Ratings T C = 25 C unless otherwise noted
FFD08S60S_F085 Features High Speed Switching (Max. t rr
More informationJ174 / J175 / J176 / J177 MMBFJ175 / MMBFJ176 / MMBFJ177 P-Channel Switch
J174 / J175 / J176 / J177 MMBFJ175 / MMBFJ176 / MMBFJ177 P-Channel Switch J174 / 175 / 176 / 177 (1) MMBFJ175 / 176 / 177 S G D Ordering Information TO-92 Description June 2013 This device is designed
More information