FDC655BN Single N-Channel, Logic Level, PowerTrench MOSFET

Transcription

1 FC655BN Single N-Channel, Logic Level, PowerTrench MOSFET 3 V, 6.3 A, 5 mω Features Max r S(on) = 5 mω at V GS = V, I = 6.3 A Max r S(on) = 33 mω at V GS =.5 V, I = 5.5 A Fast switching Low gate charge High performance trchnology for extremely low r S(on) Termination is Lead-free and RoHS Compliant General escription January This N-Channel Logic Level MOSFET is produced using Fairchild Semiconductor s advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. These devices are well suited for low voltage and battery powered applicatoins where low in-line power loss and fast switching are required. G S MOSFET Maximum Ratings T C = 5 C unless otherwise noted Symbol Parameter Ratings Units V S rain to Source Voltage 3 V V GS Gate to Source Voltage ± V -Continuous T A = 5 C (Note a) 6.3 I -Pulsed A Power issipation ( Note a).6 P Power issipation (Note b). W T J, T STG Operating and Storage Junction Temperature Range -55 to + 5 C Thermal Characteristics R θja Thermal Resistance, Junction to Ambient (Note a) 7 C/W Package Marking and Ordering Information evice Marking evice Package Reel Size Tape Width Quantity.55B FC655BN SSOT-6 TM 7 mm 3 units Fairchild Semiconductor Corporation

2 Electrical Characteristics T J = 5 C unless otherwise noted Symbol Parameter Test Conditions Min Typ Max Units Off Characteristics BV SS rain to Source Breakdown Voltage I = 5 µa, V GS = V 3 V BV SS Breakdown Voltage Temperature I T J Coefficient = 5 µa, referenced to 5 C 5 mv/ C I SS Zero Gate Voltage rain Current V S = V, V GS = V µa I GSS Gate to Source Leakage Current V GS = ± V, V S = V ± na On Characteristics V GS(th) Gate to Source Threshold Voltage V GS = V S, I = 5 µa.9 3 V V GS(th) T J Gate to Source Threshold Voltage Temperature Coefficient ynamic Characteristics Switching Characteristics I = 5 µa, referenced to 5 C -5 mv/ C V GS = V, I = 6.3 A 5 r S(on) Static rain to Source On Resistance V GS =.5 V, I = 5.5 A 6 33 mω V GS = V, I = 6.3 A, T J = 5 C 3 36 g FS Forward Transconductance V S = V, I = 6.3 A 35 S C iss Input Capacitance 7 6 pf V S = 5 V, V GS = V, C oss Output Capacitance 3 pf f = MHz C rss Reverse Transfer Capacitance 6 9 pf R g Gate Resistance 3. Ω t d(on) Turn-On elay Time 6 ns t r Rise Time V = 5 V, I = A, ns t d(off) Turn-Off elay Time V GS = V, R GEN = 6 Ω 5 6 ns t f Fall Time ns Q g Total Gate Charge V GS = V to V 9 3 nc Q g Total Gate Charge V GS = V to 5 V V = 5 V, 5 7 nc Q gs Gate to Source Charge I = 6.3 A. nc Q gd Gate to rain Miller Charge.6 nc rain-source iode Characteristics I S Maximum Continuous rain-source iode Forward Current.3 A V S Source-rain iode Forward Voltage V GS = V, I S =.3 A (Note ).. V t rr Reverse Recovery Time 5 6 ns I F = 6.3 A, di/dt = A/µs Q rr Reverse Recovery Charge nc Notes: : R θja is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. R θjc is guaranteed by design while R θca is determined by the user s board design. a. 7 C/W when mounted on a in pad of oz copper on FR- board. b. 56 C/W when mounted on a minimum pad. : Pulse Test: Pulse Width<3 us, uty Cycle<.%. Fairchild Semiconductor Corporation

3 Typical Characteristics T J = 5 C unless otherwise noted I, RAIN CURRENT (A) NORMALIZE RAIN TO SOURCE ON-RESISTANCE 6 V GS = 3 V PULSE URATION = µs UTY CYCLE =.5% MAX Figure. I = 6.3 A V GS = V V GS = V V GS = 6 V V GS =.5 V V GS = 3.5 V V S, RAIN TO SOURCE VOLTAGE (V) NORMALIZE RAIN TO SOURCE ON-RESISTANCE 6 I, RAIN CURRENT (A) On Region Characteristics Figure. Normalized On-Resistance vs rain Current and Gate Voltage T J, JUNCTION TEMPERATURE ( o C) rs(on), RAIN TO SOURCE ON-RESISTANCE (mω) V GS = 3 V PULSE URATION = µs UTY CYCLE =.5% MAX V GS = 3.5 V V GS = 6 V T J = 5 o C I = 6.3 A V GS =.5 V V GS = V PULSE URATION = µs UTY CYCLE =.5% MAX T J = 5 o C 6 V GS, GATE TO SOURCE VOLTAGE (V) Figure 3. Normalized On Resistance vs Junction Temperature Figure. On-Resistance vs Gate to Source Voltage I, RAIN CURRENT (A) 6 PULSE URATION = µs UTY CYCLE =.5% MAX V S = 5 V T J = 5 o C T J = 5 o C T J = -55 o C V GS, GATE TO SOURCE VOLTAGE (V) IS, REVERSE RAIN CURRENT (A). V GS = V T J = 5 o C T J = 5 o C T J = -55 o C V S, BOY IOE FORWAR VOLTAGE (V) Figure 5. Transfer Characteristics Figure 6. Source to rain iode Forward Voltage vs Source Current Fairchild Semiconductor Corporation 3

4 Typical Characteristics T J = 5 C unless otherwise noted I, RAIN CURRENT (A) VGS, GATE TO SOURCE VOLTAGE (V) 6 I = 6.3 A 6 Figure 7. THIS AREA IS LIMITE BY r S(on) V = V V = V Q g, GATE CHARGE (nc) V = 5 V. 3 V S, RAIN TO SOURCE VOLTAGE (V) Gate Charge Characteristics Figure. Capacitance vs rain to Source Voltage ms ms ms. T J = MAX RATE s R θja = 56 o C/W s T A = 5 o C C... V S, RAIN to SOURCE VOLTAGE (V) CAPACITANCE (pf) ), PEAK TRANSIENT POWER (W) P(PK f = MHz V GS = V V GS = V C iss C oss C rss R θja = 56 o C/W T A = 5 o C t, PULSE WITH (sec) Figure 9. Forward Bias Safe Operating Area Figure. Single Pulse Maximum Power issipation UTY CYCLE-ESCENING ORER NORMALIZE THERMAL IMPEANCE, Z θja... = R θja = 56 o C/W P M t t NOTES: UTY FACTOR: = t /t PEAK T J = P M x Z θja x R θja + T A t, RECTANGULAR PULSE URATION (sec) Figure. Junction-to-Ambient Transient Thermal Response Curve Fairchild Semiconductor Corporation

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