Applications. Top. Pin 1 D D 8. Symbol Parameter Ratings Units V DS Drain to Source Voltage -30 V V GS Gate to Source Voltage ±25 V
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1 FMC4435BZ P-Channel Power Trench MOSFET -V, -8A,.mΩ Features Max r S(on) =.mω at V GS = -V, I = -8.5A Max r S(on) = 37.mΩ at V GS = -4.5V, I = -6.3A Extended V GSS range (-5V) for battery applications High performance trench technology for extremely low r S(on) High power and current handling capability HBM ES protection level >7kV typical (Note 4) % UIL Tested Termination is Lead-free and RoHS Compliant Bottom Top General escription February 8 This P-Channel MOSFET is produced using Fairchild Semiconductor s advanced Power Trench process that has been especially tailored to minimize the on-state resistance. This devie is well suited for Power Management and load switching applications common in Notebook Computers and Portable Battery Packs. Applications High side in C - C Buck Converters Notebook battery power management Load switch in Notebook Pin S S S G G S tm FMC4435BZ P-Channel Power Trench MOSFET 7 S 8 S Power 33 MOSFET Maximum Ratings T A = 5 C unless otherwise noted Symbol Parameter Ratings Units V S rain to Source Voltage - V V GS Gate to Source Voltage ±5 V Thermal Characteristics rain Current -Continuous (Package limited) T C = 5 C -8 I -Continuous (Silicon limited) T C = 5 C -3 -Continuous T A = 5 C (Note a) -8.5 A -Pulsed - E AS Single Pulse Avalanche Energy (Note 3) 4 mj Power issipation T P C = 5 C 3 Power issipation T A = 5 C (Note a).3 W T J, T STG Operating and Storage Junction Temperature Range -55 to + C R θjc Thermal Resistance, Junction to Case 4 R θja Thermal Resistance, Junction to Ambient (Note a) 53 Package Marking and Ordering Information C/W evice Marking evice Package Reel Size Tape Width Quantity FMC4435BZ FMC4435BZ Power 33 3 mm units 8 Fairchild Semiconductor Corporation FMC4435BZ Rev.C
2 Electrical Characteristics T J = 5 C unless otherwise noted Symbol Parameter Test Conditions Min Typ Max Units Off Characteristics BV SS rain to Source Breakdown Voltage I = -µa, V GS = V - V BV SS T J I SS Breakdown Voltage Temperature Coefficient Zero Gate Voltage rain Current I = -µa, referenced to 5 C mv/ C V S = -4V, - V GS = V, T J = 5 C - I GSS Gate to Source Leakage Current V GS = ±5V, V S = V ± µa On Characteristics V GS(th) Gate to Source Threshold Voltage V GS = V S, I = -µa V V GS(th) T J r S(on) Gate to Source Threshold Voltage Temperature Coefficient Static rain to Source On Resistance I = -µa, referenced to 5 C -5.3 mv/ C V GS = -V, I = -8.5A 4.6. V GS = -4.5V, I = -6.3A V GS = -V, I = -8.5A, T J = 5 C.7 8. g FS Forward Transconductance V = -5V, I = -8.5A 4 S ynamic Characteristics C iss Input Capacitance 5 45 pf V S = -5V, V GS = V, C oss Output Capacitance pf f = MHz C rss Reverse Transfer Capacitance pf R g Gate Resistance f = MHz 5. Ω µa mω FMC4435BZ P-Channel Power Trench MOSFET Switching Characteristics t d(on) Turn-On elay Time ns t V = -5V, I = -8.5A, r Rise Time 6 ns V GS = -V, R GEN = 6Ω t d(off) Turn-Off elay Time ns t f Fall Time 36 ns Q g Total Gate Charge V GS = V to -V nc Q g Total Gate Charge V GS = V to -4.5V V = -5V, 7 4 nc Q gs Gate to Source Charge I = -8.5A 5 nc Q gd Gate to rain Miller Charge 9 nc rain-source iode Characteristics V S Source to rain iode Forward Voltage V GS = V, I S = -8.5A (Note ).9.5 V GS = V, I S = -.9A (Note ).75. t rr Reverse Recovery Time ns I F = -8.5A, di/dt = A/µs Q rr Reverse Recovery Charge nc NOTES: : R θja is determined with the device mounted on a in pad oz copper pad on a.5 x.5 in. board of FR-4 material. R θjc is guaranteed by design while R θca is determined by the user's board design.. V a. 53 C/W when mounted on a in pad of oz copper b. 5 C/W when mounted on a minimum pad of oz copper : Pulse Test: Pulse Width < µs, uty cycle <.%. 3. Starting T J = 5 C, L = mh, I AS = -7A, V = -7V, V GS = -V. 4. The diode connected between the gate and source serves only as protection against ES. No gate overvoltage rating is implied. FMC4435BZ Rev.C
3 Typical Characteristics T J = 5 C unless otherwise noted -I, RAIN CURRENT (A) NORMALIZE RAIN TO SOURCE ON-RESISTANCE V GS = -3.5V PULSE URATION = 8µs UTY CYCLE =.5%MAX 3 4 Figure I = -8.5A V GS = -V V GS = -5V V GS = -V V GS = -4.5V V GS = - 4V -V S, RAIN TO SOURCE VOLTAGE (V) NORMALIZE RAIN TO SOURCE ON-RESISTANCE. V GS = -V.5 On-Region Characteristics Figure. Normalized On-Resistance vs rain Current and Gate Voltage T J, JUNCTION TEMPERATURE ( o C) rs(on), RAIN TO SOURCE ON-RESISTANCE (mω) V GS = -3.5V PULSE URATION = 8µs UTY CYCLE =.5%MAX V GS = -4V -I, RAIN CURRENT(A) V GS = -4.5V V GS = -5V PULSE URATION = 8µs UTY CYCLE =.5%MAX I = -8.5A V GS, GATE TO SOURCE VOLTAGE (V) FMC4435BZ P-Channel Power Trench MOSFET Figure 3. Normalized On- Resistance vs Junction Temperature Figure 4. On-Resistance vs Gate to Source Voltage -I, RAIN CURRENT (A) PULSE URATION = 8µs UTY CYCLE =.5%MAX V S = -5V T J = o C T J = -55 o C V GS, GATE TO SOURCE VOLTAGE (V) Figure 5. Transfer Characteristics -IS, REVERSE RAIN CURRENT (A).. V GS = V T J = o C T J = -55 o C V S, BOY IOE FORWAR VOLTAGE (V) Figure 6. Source to rain iode Forward Voltage vs Source Current FMC4435BZ Rev.C 3
4 Typical Characteristics T J = 5 C unless otherwise noted -IAS, AVALANCHE CURRENT(A) -VGS, GATE TO SOURCE VOLTAGE(V) I = -8.5A Figure 7. V = -V V = -5V V = -V Q g, GATE CHARGE(nC). -V S, RAIN TO SOURCE VOLTAGE (V) Gate Charge Characteristics Figure 8. Capacitance vs rain to Source Voltage... t AV, TIME IN AVALANCHE(ms) CAPACITANCE (pf) -I, RAIN CURRENT (A) f = MHz V GS = V Limited by Package V GS = -4.5V C iss C oss C rss V GS = -V R θjc = 4 o C/W T C, CASE TEMPERATURE ( o C) FMC4435BZ P-Channel Power Trench MOSFET Figure 9. Unclamped Inductive Switching Capability Figure. Maximum Continuous rain Current vs Case Temperature -4 VS = V -I, RAIN CURRENT (A) THIS AREA IS LIMITE BY r S(on) us ms ms ms SINGLE PULSE s. T J = MAX RATE s R θja = 5 o C/W C T A = 5 o C... -V S, RAIN TO SOURCE VOLTAGE (V) -Ig, GATE LEAKAGE CURRENT(A) V GS, GATE TO SOURCE VOLTAGE(V) Figure. Forward Bias Safe Operating Area Figure. Igss vs Vgss FMC4435BZ Rev.C 4
5 Typical Characteristics T J = 5 C unless otherwise noted P (PK), PEAK TRANSIENT POWER (W) NORMALIZE THERMAL IMPEANCE, Z θja t, PULSE WITH (sec). Figure 3. UTY CYCLE-ESCENING ORER = V GS = -V SINGLE PULSE R θja = 5 o C/W T A = 5 o C Single Pulse Maximum Power issipation SINGLE PULSE R θja = 5 o C/W P M t t NOTES: UTY FACTOR: = t /t PEAK T J = P M x Z θja x R θja + T A FMC4435BZ P-Channel Power Trench MOSFET t, RECTANGULAR PULSE URATION (sec) Figure 4. Transient Thermal Response Curve FMC4435BZ Rev.C 5
6 imensional Outline and Pad Layout FMC4435BZ P-Channel Power Trench MOSFET FMC4435BZ Rev.C 6
7 TRAEMARKS The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is not intended to be an exhaustive list of all such trademarks. ACEx Build it Now CorePLUS CorePOWER CROSSVOLT CTL Current Transfer Logic EcoSPARK EfficentMax EZSWITCH * Fairchild Fairchild Semiconductor FACT Quiet Series FACT FAST FastvCore FlashWriter * FPS F-PFS FRFET Global Power Resource SM Green FPS Green FPS e-series GTO IntelliMAX ISOPLANAR MegaBuck MICROCOUPLER MicroFET MicroPak Millerrive MotionMax Motion-SPM OPTOLOGIC OPTOPLANAR PP SPM Power-SPM PowerTrench Programmable Active roop QFET QS Quiet Series RapidConfigure Saving our world, mw at a time SmartMax SMART START SPM STEALTH SuperFET SuperSOT -3 SuperSOT -6 SuperSOT -8 SupreMOS SyncFET The Power Franchise TinyBoost TinyBuck TinyLogic TINYOPTO TinyPower TinyPWM TinyWire μseres UHC Ultra FRFET UniFET VCX VisualMax * EZSWITCH and FlashWriter are trademarks of System General Corporation, used under license by Fairchild Semiconductor. ISCLAIMER FAIRCHIL SEMICONUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PROUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION, OR ESIGN. FAIRCHIL OES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PROUCT OR CIRCUIT ESCRIBE HEREIN; NEITHER OES IT CONVEY ANY LICENSE UNER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. THESE SPECIFICATIONS O NOT EXPAN THE TERMS OF FAIRCHIL S WORLWIE TERMS AN CONITIONS, SPECIFICALLY THE WARRANTY THEREIN, WHICH COVERS THESE PROUCTS. LIFE SUPPORT POLICY FAIRCHIL S PROUCTS ARE NOT AUTHORIZE FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT EVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHIL SEMICONUCTOR CORPORATION. As used herein:. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body or (b) support or sustain life, and (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in a significant injury of the user.. A critical component in any component of a life support, device, or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. PROUCT STATUS EFINITIONS efinition of Terms atasheet Identification Product Status efinition Advance Information Formative / In esign This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. Preliminary No Identification Needed Obsolete First Production Full Production Not In Production This datasheet contains preliminary data; supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve the design. This datasheet contains specifications on a product that is discontinued by Fairchild Semiconductor. The datasheet is for reference information only. Rev. I34 8 Fairchild Semiconductor Corporation
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Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com ON Semiconductor and the ON Semiconductor logo are trademarks of Semiconductor Components Industries, LLC
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