FDC610PZ P-Channel PowerTrench MOSFET

Transcription

1 FC6PZ P-Channel PowerTrench MOSFET 3V, 4.9A, 4mΩ Features Max r S(on) = 4mΩ at V GS = V, I = 4.9A Max r S(on) = 7mΩ at V GS = 4.V, I = 3.7A Low gate charge (7nC typical). High performance trench technology for extremely low r S(on). SuperSOT TM 6 package: small footprint (7% smaller than standard SO 8) low profile (mm thick). RoHS Compliant General escription August 7 This P-Channel MOSFET is produced using Fairchild Semiconductor s advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain low gate charge for superior switching performance. These devices are well suited for battery power applications: load switching and power management, battery charging circuits, and C/C conversion. Application C - C Conversion tm FC6PZ P-Channel PowerTrench MOSFET S 6 Pin G G 3 4 S SuperSOT TM -6 MOSFET Maximum Ratings T A = C unless otherwise noted Symbol Parameter Ratings Units V S rain to Source Voltage 3 V V GS Gate to Source Voltage ± V rain Current -Continuous (Note a) 4.9 I -Pulsed A Power issipation (Note a).6 P Power issipation (Note b).8 W T J, T STG Operating and Storage Junction Temperature Range to + C Thermal Characteristics R θja Thermal Resistance, Junction to Ambient (Note a) 78 R θja Thermal Resistance, Junction to Ambient (Note b) 6 Package Marking and Ordering Information C/W evice Marking evice Package Reel Size Tape Width Quantity.6Z FC6PZ SSOT6 7 8mm 3units 7 Fairchild Semiconductor Corporation FC6PZ Rev.B

2 Electrical Characteristics T J = C unless otherwise noted Symbol Parameter Test Conditions Min Typ Max Units Off Characteristics BV SS rain to Source Breakdown Voltage I = µa, V GS = V 3 V BV SS Breakdown Voltage Temperature I T J Coefficient = µa, referenced to C mv/ C I SS Zero Gate Voltage rain Current V S = 4V, V GS = V µa I GSS Gate to Source Leakage Current V GS = ±V, V S = V ± µa On Characteristics V GS(th) Gate to Source Threshold Voltage V GS = V S, I = µa. 3 V V GS(th) T J r S(on) Gate to Source Threshold Voltage Temperature Coefficient Static rain to Source On Resistance I = µa, referenced to C 6 mv/ C V GS = V, I = 4.9A 36 4 V GS = 4.V, I = 3.7A 8 7 V GS = V, I = 4.9A, T J = C 6 g FS Forward Transconductance V = V, I = 4.9A S ynamic Characteristics C iss Input Capacitance 7 pf V S = V, V GS = V, C oss Output Capacitance 4 9 pf f = MHz C rss Reverse Transfer Capacitance 9 pf R g Gate Resistance f = MHz 3 Ω mω FC6PZ P-Channel PowerTrench MOSFET Switching Characteristics t d(on) Turn-On elay Time 7 4 ns V = V, I = 4.9A t r Rise Time 4 ns V GS = V, R GEN = 6Ω t d(off) Turn-Off elay Time 33 3 ns t f Fall Time 3 37 ns Q g Total Gate Charge V GS = V to V 7 4 nc Q g Total Gate Charge V GS = V to 4.V V = V, 9 3 nc Q gs Gate to Source Gate Charge I = 4.9A.9 nc Q gd Gate to rain Miller Charge 4.3 nc rain-source iode Characteristics I S Maximum Continuous rain-source iode Forward Current.3 A V S Source to rain iode Forward Voltage V GS = V, I S =.3A (Note ).8. V t rr Reverse Recovery Time 9 3 ns I F = 4.9A, di/dt = A/µs Q rr Reverse Recovery Charge 9 8 nc Notes:. R θja is determined with the device mounted on a in pad oz copper pad on a. x. in. board of FR-4 material. R θjc is guaranteed by design while R θca is determined by the user's board design. a. 78 C/W when mounted on a in pad of oz copper. b. 6 C/W when mounted on a minimum pad of oz copper.. Pulse Test: Pulse Width < 3µs, uty cycle <.%. FC6PZ Rev.B

3 Typical Characteristics T J = C unless otherwise noted -I, RAIN CURRENT (A) NORMALIZE RAIN TO SOURCE ON-RESISTANCE Figure. I = -4.9A V GS = -V V GS = -V PULSE URATION = 8µs UTY CYCLE =.%MAX V GS = -V V GS = -4.V V GS = -4V -V S, RAIN TO SOURCE VOLTAGE (V) V GS = -3.V NORMALIZE RAIN TO SOURCE ON-RESISTANCE. V GS = -V. On-Region Characteristics Figure. Normalized On-Resistance vs rain Current and Gate Voltage T J, JUNCTION TEMPERATURE ( o C) rs(on), RAIN TO SOURCE ON-RESISTANCE (mω) V GS = -3.V V GS = -4V -I, RAIN CURRENT(A) I = -4.9A T J = o C PULSE URATION = 8µs UTY CYCLE =.%MAX V GS = -4.V V GS = -V PULSE URATION = 8µs UTY CYCLE =.%MAX T J = o C V GS, GATE TO SOURCE VOLTAGE (V) FC6PZ P-Channel PowerTrench MOSFET Figure 3. Normalized On- Resistance vs Junction Temperature Figure 4. On-Resistance vs Gate to Source Voltage -I, RAIN CURRENT (A) PULSE URATION = 8µs UTY CYCLE =.%MAX V = -V T J = o C T J = o C T J = - o C 3 4 -V GS, GATE TO SOURCE VOLTAGE (V) Figure. Transfer Characteristics -IS, REVERSE RAIN CURRENT (A).. V GS = V T J = o C T J = o C T J = - o C E V S, BOY IOE FORWAR VOLTAGE (V) Figure 6. Source to rain iode Forward Voltage vs Source Current FC6PZ Rev.B 3

4 Typical Characteristics T J = C unless otherwise noted -VGS, GATE TO SOURCE VOLTAGE(V) -Ig, GATE LEAKAGE CURRENT(uA) I = -4.9A Figure 7. 4 VS = V V = -V V = -V Q g, GATE CHARGE(nC) V = -V f = MHz V GS = V. -V S, RAIN TO SOURCE VOLTAGE (V) Gate Charge Characteristics Figure 8. Capacitance vs rain to Source Voltage T J = o C T J = o C V GS, GATE TO SOURCE VOLTAGE (V) CAPACITANCE (pf) -I, RAIN CURRENT (A) 3. C iss C oss C rss us SINGLE PULSE T J = MAX RATE R θja = 6 o C/W T A = o C THIS AREA IS LIMITE BY r S(on) ms ms ms s s C.. -V S, RAIN to SOURCE VOLTAGE (V) 3 FC6PZ P-Channel PowerTrench MOSFET Figure 9. Gate Leakage Current vs Gate to Source Voltage Figure. Forward Bias Safe Operating Area P (PK), PEAK TRANSIENT POWER (W) V GS = -V SINGLE PULSE R θja = 6 o C/W T A = o C t, PULSE WITH (s) Figure. Single Pulse Maximum Power issipation FC6PZ Rev.B 4

5 Typical Characteristics T J = C unless otherwise noted NORMALIZE THERMAL IMPEANCE, Z θja.. UTY CYCLE-ESCENING ORER = SINGLE PULSE R θja = 6 o C/W E Figure. t, RECTANGULAR PULSE URATION (s) Transient Thermal Response Curve P M t t NOTES: UTY FACTOR: = t /t PEAK T J = P M x Z θja x R θja + T A FC6PZ P-Channel PowerTrench MOSFET FC6PZ Rev.B

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