5 A, 30 V. R DS(ON) = 25 C unless otherwise note. Symbol Parameter FDC653N Units V DSS. Drain-Source Voltage 30 V V GSS
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1 November 997 FC65N N-Channel Enhancement Mode Field Effect Transistor General escription Features This N-Channel enhancement mode power field effect transistors is produced using Fairchild's proprietary, high cell density, MOS technology. This very high density process is tailored to minimize on-state resistance. These devices are particularly suited for low voltage applications in notebook computers, portable phones, PCMICA cards, and other battery powered circuits where fast switching, and low in-line power loss are needed in a very small outline surface mount package. 5 A, V. R S(ON) =.5 V GS = V R S(ON) =.55 V GS = 4.5 V. Proprietary SuperSOT TM -6 package design using copper lead frame for superior thermal and electrical capabilities. High density cell design for extremely low R S(ON). Exceptional on-resistance and maximum C current capability. SOT-2 SuperSOT TM -6 SuperSOT TM -8 SO-8 SOT-22 SOIC-6 S TM SuperSOT -6 pin G 4 Absolute Maximum Ratings T A = 25 C unless otherwise note Symbol Parameter FC65N Units V SS rain-source Voltage V V GSS Gate-Source Voltage - Continuous ±2 V I rain Current - Continuous (Note a) 5 A - Pulsed 5 P Maximum Power issipation (Note a).6 W (Note b).8 T J,T STG Operating and Storage Temperature Range -55 to 5 C THERMAL CHARACTERISTICS R θja Thermal Resistance, Junction-to-Ambient (Note a) 78 C/W R θjc Thermal Resistance, Junction-to-Case (Note ) C/W 997 Fairchild Semiconductor Corporation FC65N Rev.C
2 ELECTRICAL CHARACTERISTICS (T A = 25 C unless otherwise noted) Symbol Parameter Conditions Min Typ Max Units OFF CHARACTERISTICS BV SS rain-source Breakdown Voltage V GS = V, I = 25 µa V BV SS / T J Breakdown Voltage Temp. Coefficient I = 25 µa, Referenced to 25 o C mv / o C I SS Zero Gate Voltage rain Current V S = 24 V, V GS = V µa T J = 55 o C µa I GSSF Gate - Body Leakage, Forward V GS = 2 V, V S = V na I GSSR Gate - Body Leakage, Reverse V GS = -2 V, V S = V - na ON CHARACTERISTICS (Note 2) V GS(th) Gate Threshold Voltage V S = V GS, I = 25 µa.7 2 V V GS(th) / T J Gate Threshold VoltageTemp.Coefficient I = 25 µa, Referenced to 25 o C -4.2 mv / o C R S(ON) Static rain-source On-Resistance V GS = V, I = 5 A.27.5 Ω T J = 25 o C V GS = 4.5 V, I = 4.2 A I (on) On-State rain Current V GS = V, V S = 5 V 8 A g FS Forward Transconductance V S = V, I = 5 A 6.2 S YNAMIC CHARACTERISTICS C iss Input Capacitance V S = 5 V, V GS = V, 5 pf C oss Output Capacitance f =. MHz 22 pf C rss Reverse Transfer Capacitance 8 pf SWITCHING CHARACTERISTICS (Note 2) t (on) Turn - On elay Time V = V, I = A, ns t r Turn - On Rise Time V GS = 4.5 V, R GEN = 6 Ω 2 25 ns t (off) Turn - Off elay Time 25 ns t f Turn - Off Fall Time 6 5 ns Q g Total Gate Charge V S = 5 V, I = 5 A, 2 7 nc Q gs Gate-Source Charge V GS = V 2. nc Q gd Gate-rain Charge 2.6 nc RAIN-SOURCE IOE CHARACTERISTICS I S Continuous Source iode Current. A V S rain-source iode Forward Voltage V GS = V, I S =. A (Note 2).75.2 V T J = 25 o C.6 Notes:. R θja is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. R θjc is guaranteed by design while R θca is determined by the user's board design. a. 78 o C/W when mounted on a minimum on a in 2 pad of 2oz Cu in FR-4 board. b. 56 o C/W when mounted on a minimum pad of 2oz Cu in FR-4 board. 2. Pulse Test: Pulse Width < µs, uty Cycle < 2.%. FC65N Rev.C
3 S Typical Electrical Characteristics I, RAIN-SOURCE CURRENT (A) V GS= V R S(ON), NORMALIZE RAIN-SOURCE ON-RESISTANCE V =.5V GS V S, RAIN-SOURCE VOLTAGE (V) Figure. On-Region Characteristics I, RAIN CURRENT (A) Figure 2. On-Resistance Variation with rain Current and Gate Voltage. R S(ON), NORMALIZE RAIN-SOURCE ON-RESISTANCE I = 5.A V GS = V T, JUNCTION TEMPERATURE ( C) J R S(ON), ON-RESISTANCE (OHM) T = 25 C A T = 25 C A V, GATE TO SOURCE VOLTAGE (V) GS I =2A Figure. On-Resistance Variation with Temperature. Figure 4. On Resistance Variation with Gate-To- Source Voltage. I, RAIN CURRENT (A) V S = 5V T = -55 C A 25 C 25 C I, REVERSE RAIN CURRENT (A) 5... V =V GS T = 25 C A 25 C -55 C V GS, GATE TO SOURCE VOLTAGE (V) V S, BOY IOE FORWAR VOLTAGE (V) Figure 5. Transfer Characteristics. Figure 6. Body iode Forward Voltage Variation with Source Current and Temperature. FC65N Rev.B
4 Typical Electrical And Thermal Characteristics V GS, GATE-SOURCE VOLTAGE (V) I = 5.A V S= 5V 5V Q g, GATE CHARGE (nc) V Figure 7. Gate Charge Characteristics. CAPACITANCE (pf) 5 2 f = MHz V GS = V 5.. V, RAIN TO SOURCE VOLTAGE (V) S Figure 8. Capacitance Characteristics. C iss C oss C rss I, RAIN CURRENT (A)... RS(ON) LIMIT V GS = V SINGLE PULSE R θja = See Note b T A = 25 C s C ms ms ms V S, RAIN-SOURCE VOLTAGE (V) us POWER (W) SINGLE PULSE TIME (SEC) SINGLE PULSE R θja =See note b T A = 25 C Figure 9. Maximum Safe Operating Area. Figure. Single Pulse Maximum Power issipation. r(t), NORMALIZE EFFECTIVE TRANSIENT THERMAL RESISTANCE = Single Pulse..... t, TIME (sec) P(pk) R θja (t) = r(t) * R θja R = See Note b θja t t 2 T J - T = P * R (t) A θja uty Cycle, = t / t 2 Figure. Transient Thermal Response Curve. Note: Thermal characterization performed using the conditions described in note b.transient thermal response will change depending on the circuit board design. FC65N Rev.B
5 TRAEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACEx Bottomless CoolFET CROSSVOLT ensetrench OME EcoSPARK E 2 CMOS TM EnSigna TM FACT FACT Quiet Series STAR*POWER is used under license ISCLAIMER FAIRCHIL SEMICONUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PROUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR ESIGN. FAIRCHIL OES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PROUCT OR CIRCUIT ESCRIBE HEREIN; NEITHER OES IT CONVEY ANY LICENSE UNER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. LIFE SUPPORT POLICY FAIRCHIL S PROUCTS ARE NOT AUTHORIZE FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT EVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHIL SEMICONUCTOR CORPORATION. As used herein:. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in significant injury to the user. PROUCT STATUS EFINITIONS efinition of Terms FAST FASTr FRFET GlobalOptoisolator GTO HiSeC ISOPLANAR LittleFET MicroFET MicroPak MICROWIRE OPTOLOGIC OPTOPLANAR PACMAN POP Power247 PowerTrench QFET QS QT Optoelectronics Quiet Series SILENT SWITCHER SMART START STAR*POWER Stealth SuperSOT - SuperSOT -6 SuperSOT -8 SyncFET TinyLogic TruTranslation UHC UltraFET 2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. atasheet Identification Product Status efinition VCX Advance Information Preliminary No Identification Needed Formative or In esign First Production Full Production This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. Obsolete Not In Production This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. Rev. H4
6 Careers Sitema Go ATASHEETS, SAMPLES, BUY TECHNICAL INFORMATION APPLICATIONS ESIGN CENTER SUPPORT COMPANY INVESTORS MY FA Home >> Find products >> FC65N N-Channel Enhancement Mode Field Effect Transistor Related Links Request samples Contents General description Features Product status/pricing/packaging Order Samples Models Qualification Support atasheet ownload this datasheet How to order products Product Change Notices (PCNs) Support General description This N-Channel enhancement mode power field effect transistors is produced using Fairchild's proprietary, high cell density, MOS technology. This very high density process is tailored to minimize on-state resistance. These devices are particularly suited for low voltage applications in notebook computers, portable phones, PCMICA cards, and other battery powered circuits where fast switching, and low in-line power loss are needed in a very small outline surface mount package. Features 5 A, V. RS(ON) =.5 VGS = V, RS(ON) =.55 VGS = 4.5 V. Proprietary SuperSOT TM -6 package design using copper lead frame for superior thermal and electrical capabilities. High density cell design for extremely low RS(ON). Exceptional on-resistance and maximum C current capability. this datasheet This page Print version This product Use in FETBench Analysis Sales support Quality and reliability esign center Product status/pricing/packaging Product Product status Pb-free Status Pricing* Package type Leads Packing method Package Marking Convention**
7 FC65N Full Production $.72 SSOT-6 6 TAPE REEL Line : &E&Y (Binary Calendar Year Coding) Line 2:.65 FC65N_NBE5A Full Production N/A SSOT-6 6 TAPE REEL Line : &E&Y (Binary Calendar Year Coding) Line 2:.65 FC65N_NF7 Full Production N/A SSOT-6 6 TAPE REEL Line : &E&Y (Binary Calendar Year Coding) Line 2:.65 * Fairchild, piece Budgetary Pricing ** A sample button will appear if the part is available through Fairchild's on-line samples program. If there is no sample button, please contact a Fairchild distributor to obtain samples Indicates product with Pb-free second-level interconnect. For more information click here. Package marking information for product FC65N is available. Click here for more information. Models Package & leads Condition Temperature range Software version Revision date PSPICE SSOT-6-6 Electrical 25 C to 25 C Orcad 9. Oct 4, 22 Qualification Support Click on a product for detailed qualification data Product FC65N FC65N_NBE5A FC65N_NF7
8 27 Fairchild Semiconductor Products esign Center Support Company News Investors My Fairchild Contact Us Site Index Privacy Policy Site Terms & Conditions Standard Terms & Conditions o
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250V N-Channel MOSFET General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild s proprietary, planar stripe, DMOS technology. This advanced technology
More informationIs Now Part of To learn more about ON Semiconductor, please visit our website at
Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com ON Semiconductor and the ON Semiconductor logo are trademarks of Semiconductor Components Industries, LLC
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FQA11N90 FQA11N90 900V N-Channel MOSFET September 2000 QFET TM General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild s proprietary, planar stripe,
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More informationIs Now Part of To learn more about ON Semiconductor, please visit our website at
Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com ON Semiconductor and the ON Semiconductor logo are trademarks of Semiconductor Components Industries, LLC
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