Dual N-Channel Logic Level PWM Optimized PowerTrench MOSFET. Features. TA=25 o C unless otherwise noted. Symbol Parameter Ratings Units

Transcription

1 FS9 ual N-Channel Logic Level PWM Optimized PowerTrench MOSFET July FS9 General escription These N-Channel Logic Level MOSFETs have been designed specifically to improve the overall efficiency of C/C converters using either synchronous or conventional switching PWM controllers. These MOSFETs feature faster switching and lower gate charge than other MOSFETs with comparable RS(ON) specifications. The result is a MOSFET that is easy and safer to drive (even at very high frequencies), and C/C power supply designs with higher overall efficiency. Features A, 3 V. R S(ON) =. V GS = V R S(ON) =. V GS =. V. Optimized for use in switching C/C converters with PWM controllers Very fast switching. Low gate charge SO- Q 3 G SG S Absolute Maximum Ratings TA= o C unless otherwise noted Symbol Parameter Ratings Units V SS rain-source Voltage 3 V V GSS Gate-Source Voltage ± V I rain Current Continuous (Note a) A P Pulsed Power issipation for ual Operation Power issipation for Single Operation (Note a). 7 Q (Note b) (Note c).9 T J, T stg Operating and Storage Junction Temperature Range - to + C Thermal Characteristics R θja Thermal Resistance, Junction-to-Ambient (Note a) 7 C/W R θjc Thermal Resistance, Junction-to-Case (Note ) C/W Package Marking and Ordering Information evice Marking evice Reel Size Tape width Quantity FS9 FS9 3 mm units W Fairchild Semiconductor Corporation FS9 Rev F (W)

2 Electrical Characteristics T A = C unless otherwise noted Symbol Parameter Test Conditions Min Typ Max Units Off Characteristics BV SS rain Source Breakdown Voltage V GS = V, I = µa 3 V BVSS T J Breakdown Voltage Temperature Coefficient I = µa, Referenced to C mv/ C I SS Zero Gate Voltage rain Current V S = V, V GS = V µa T J = C I GSSF Gate Body Leakage, Forward V GS = V, V S = V na I GSSR Gate Body Leakage, Reverse V GS = V V S = V na FS9 On Characteristics (Note ) V GS(th) Gate Threshold Voltage V S = V GS, I = µa 3 V VGS(th) T J Gate Threshold Voltage Temperature Coefficient I = µa, Referenced to C mv/ C R S(on) Static rain Source On Resistance V GS = V, I = A T J = C..3.. Ω V GS =. V, I =.9 A.3. I (on) On State rain Current V GS = V, V S = V A g FS Forward Transconductance V S = V, I = A S ynamic Characteristics C iss Input Capacitance V S = V, V GS = V, 7 pf C oss Output Capacitance f =. MHz 7 pf C rss Reverse Transfer Capacitance 7 pf Switching Characteristics (Note ) t d(on) Turn On elay Time V = V, I = A, ns t r Turn On Rise Time V GS = V, R GEN = Ω 3 ns t d(off) Turn Off elay Time 9 ns Turn Off Fall Time ns t f Q g Total Gate Charge V S = V, I = A, 7 nc Q gs Gate Source Charge V GS = V 3. nc Q gd Gate rain Charge. nc rain Source iode Characteristics and Maximum Ratings I S Maximum Continuous rain Source iode Forward Current.3 A V S rain Source iode Forward Voltage V GS = V, I S =.3 A (Note ).7. V Notes:. R θja is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. R θjc is guaranteed by design while R θca is determined by the user's board design. a) 7 /W when mounted on a.in pad of oz copper b) /W when mounted on a. in pad of oz copper c) 3 /W when mounted on a minimum mounting pad. Scale : on letter size paper. Pulse Test: Pulse Width < 3µs, uty Cycle <.% FS9 Rev E (W)

3 Typical Characteristics 3 V GS= V.V.V.V. FS9 I, RAIN-SOUR CE CURREN T(A).V 3.V 3.V 3 3 V S, RAIN-SOUR CE VOLTAGE (V). VGS =.V..V.V..V 7.V V. 3 I, RAIN CURRENT (A) Figure. On-Region Characteristics. Figure. On-Resistance Variation with rain Current and Gate Voltage.. R S(ON),NORMALIZE RAIN-SOURCE ON-RESISTANCE I =.3A V GS =V R S(ON),(OHM) RAIN-SOURCE ON-RESISTANCE 7 3 o T A = C o C I = 3.A T, JUNCTION TEMPERATURE ( C) J V,GATE-SOURCE VOLTAGE (V) GS Figure 3. On-Resistance Variation withtemperature. Figure. On-Resistance Variation with Gate-to-Source Voltage. I, RAIN CURRENT (A) V S = V T = - C J C C... V GS = V TA = o C o C - o C 3 V GS, GATE TO SOURCE VOLTAGE (V) Figure. Transfer Characteristics V S, BOY IOE FORWAR VOLTAGE (V) Figure. Body iode Forward Voltage Variation with Source Current and Temperature. FS9 Rev E (W)

4 Typical Characteristics (continued) FS9 I =.3A V S = V V V CAPACITANCE (pf) f = MHz V GS = V C iss C oss C rss Qg, GATE CHARGE (nc) V S, RAIN TO SOURCE VOLTAGE (V) Figure 7. Gate Charge Characteristics. Figure. Capacitance Characteristics. I, RAIN CURRENT (A).. RS(ON) LIMIT V GS = V SINGLE PULSE R θja = 3 C/W T A = C s C ms.... V, RAIN-SOURCE VOLTAGE (V) S s ms ms us Figure 9. Maximum Safe Operating Area. POWER (W) 3 SINGLE PULSE TIME (SEC) SINGLE PULSE R θja= 3 C/W T A =.. Figure. Single Pulse Maximum Power issipation. r(t), NORMALIZE EFFECTIVE TRANSIENT THERMAL RESISTANCE = Single Pulse R θja (t) = r(t) * R R = 3 C/W θja θja T J - T A = P * R θja(t) uty Cycle, = t /t t, TIME (sec) P(pk) t t Figure. Transient Thermal Response Curve. Thermal characterization performed using the conditions described in Note c. Transient thermal response will change depending on the circuit board design. FS9 Rev E (W)

5 TRAEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACEx Bottomless CoolFET CROSSVOLT ensetrench OME EcoSPARK E CMOS TM EnSigna TM FACT FACT Quiet Series STAR*POWER is used under license ISCLAIMER FAIRCHIL SEMICONUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PROUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR ESIGN. FAIRCHIL OES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PROUCT OR CIRCUIT ESCRIBE HEREIN; NEITHER OES IT CONVEY ANY LICENSE UNER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. LIFE SUPPORT POLICY FAIRCHIL S PROUCTS ARE NOT AUTHORIZE FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT EVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHIL SEMICONUCTOR CORPORATION. As used herein:. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in significant injury to the user. PROUCT STATUS EFINITIONS efinition of Terms FAST FASTr FRFET GlobalOptoisolator GTO HiSeC ISOPLANAR LittleFET MicroFET MicroPak MICROWIRE OPTOLOGIC OPTOPLANAR PACMAN POP Power7 PowerTrench QFET QS QT Optoelectronics Quiet Series SILENT SWITCHER SMART START STAR*POWER Stealth SuperSOT -3 SuperSOT - SuperSOT - SyncFET TinyLogic TruTranslation UHC UltraFET. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. atasheet Identification Product Status efinition VCX Advance Information Preliminary No Identification Needed Formative or In esign First Production Full Production This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. Obsolete Not In Production This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. Rev. H