Features. 175 C maximum junction temperature rating. TO-263AB FDB Series. TA=25 o C unless otherwise noted

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FP63L/FB63L N-Channel Logic Level PowerTrench MOFET eneral escription This N-Channel Logic Level MOFET has been designed specifically to improve the overall efficiency of C/C converters using either

The result is a MOFET that is easy and safer to drive (even at very high frequencies), and C/C power supply designs with higher overall efficiency.

1 FP63L/FB63L N-Channel Logic Level PowerTrench MOFET eneral escription This N-Channel Logic Level MOFET has been designed specifically to improve the overall efficiency of C/C converters using either synchronous or conventional switching PWM controllers. These MOFETs feature faster switching and lower gate charge than other MOFETs with comparable R (ON) specifications. The result is a MOFET that is easy and safer to drive (even at very high frequencies), and C/C power supply designs with higher overall efficiency. Features 48 A, 3 V R (ON) = 3 V = V August 23 R (ON) = 7 V = 4.5 V Critical C electrical parameters specified at elevated temperature High performance trench technology for extremely low R (ON) 75 C maximum junction temperature rating FP63L/FB63L It has been optimized for low gate charge, low R (ON) and fast switching speed. TO-22 FP eries TO-263AB FB eries Absolute Maximum Ratings TA=25 o C unless otherwise noted ymbol Parameter Ratings Units V rain-ource Voltage 3 V V ate-ource Voltage ± 2 V I rain Current Continuous (Note ) 48 A Pulsed 5 P Total Power T C = 25 C 52 W erate above 25 C.3 W/ C T J, T T Operating and torage Junction Temperature Range 65 to +75 C Thermal Characteristics R θjc Thermal Resistance, Junction-to-Case 2.9 C/W R θja Thermal Resistance, Junction-to-Ambient 62.5 Package Marking and Ordering Information evice Marking evice Reel ize Tape width Quantity FB63L FB63L 3 24mm 8 units FP63L FP63L Tube n/a Fairchild emiconductor Corporation FP63L/FB63L Rev E(W)

2 Electrical Characteristics T A = 25 C unless otherwise noted ymbol Parameter Test Conditions Min Typ Max Units rain-ource Avalanche Ratings (Note ) E A ingle Pulse rain-ource Avalanche Energy V = 5 V, I = 26 A mj I A Maximum rain-ource Avalanche Current 26 A Off Characteristics BV rain ource Breakdown Voltage V = V, I = 25 µa 3 V BV T J Breakdown Voltage Temperature Coefficient I = 25 µa, Referenced to 25 C I Zero ate Voltage rain Current V = 24 V, V = V µa I ate Body Leakage V = ± 2 V, V = V ± na 23 mv/ C FP63L/FB63L On Characteristics (Note 2) V (th) ate Threshold Voltage V = V, I = 25 µa.9 3 V V(th) T J R (on) ate Threshold Voltage Temperature Coefficient tatic rain ource On Resistance I = 25 µa, Referenced to 25 C V = V, I = 26 A V = 4.5 V, I = 2 A V = V, I = 26 A, T J=25 C I (on) On tate rain Current V = V, V = V 6 A g F Forward Transconductance V = V, I = 26 A 68 ynamic Characteristics C iss Input Capacitance V = 5 V, V = V, 25 pf C oss Output Capacitance f =. MHz 33 pf C rss Reverse Transfer Capacitance mv/ C mω 55 pf R ate Resistance V = 5 mv, f =. MHz.3 Ω witching Characteristics (Note 2) t d(on) Turn On elay Time V = 5V, I = A, 2 ns t r Turn On Rise Time V = V, R EN = 6 Ω 2 22 ns t d(off) Turn Off elay Time ns t f Turn Off Fall Time 2 2 ns Q g Total ate Charge V = 5 V, I = 26 A, 3 8 nc Q gs ate ource Charge V = 5 V 3.9 nc Q gd ate rain Charge 5.2 nc rain ource iode Characteristics and Maximum Ratings I Maximum Continuous rain ource iode Forward Current 48 A V rain ource iode Forward Voltage V = V, I = 26 A (Note ).92.3 V t rr iode Reverse Recovery Time I F = 26 A, 26 n iode Reverse Recovery Charge d if/d t = A/µs 5 nc Q rr Notes:. Calculated continuous current based on maximum allowable junction temperature. 2. Pulse Test: Pulse Width < 3µs, uty Cycle < 2.% FP63L/FB63L Rev E(W)

3 Typical Characteristics V = V 6.V 5.V 4.5V 4.V 3.5V 3.V V, RAIN-OURCE VOLTAE (V) Figure. On-Region Characteristics. R (ON), NORMALIZE RAIN-OURCE ON-REITANCE V = 3.5V 3.5V 4.V 4.5V 5.V 6.V V Figure 2. On-Resistance Variation with rain Current and ate Voltage. FP63L/FB63L R (ON), NORMALIZE RAIN-OURCE ON-REITANCE I = 26A V =V R (ON), ON-REITANCE (OHM) T A = 25 o C T A = 25 o C I = 26A T J, JUNCTION TEMPERATURE ( o C) Figure 3. On-Resistance Variation with Temperature V, ATE TO OURCE VOLTAE (V) Figure 4. On-Resistance Variation with ate-to-ource Voltage. 9 V = 5V V = V T A = 25 o C 25 o C -55 o C I, REVERE RAIN CURRENT (A).. T A = 25 o C 25 o C -55 o C V, ATE TO OURCE VOLTAE (V) Figure 5. Transfer Characteristics V, BOY IOE FORWAR VOLTAE (V) Figure 6. Body iode Forward Voltage Variation with ource Current and Temperature. FP63L/FB63L Rev E(W)

4 Typical Characteristics V, ATE-OURCE VOLTAE (V) I = 26A V = V 5V 2V CAPACITANCE (pf) C oss C iss f = MHz V = V FP63L/FB63L Q g, ATE CHARE (nc) Figure 7. ate Charge Characteristics. C rss V, RAIN TO OURCE VOLTAE (V) Figure 8. Capacitance Characteristics. R (ON) LIMIT V = V INLE PULE R θjc = 2.9 o C/W T A = 25 o C m m C µs m µs. V, RAIN-OURCE VOLTAE (V) Figure 9. Maximum afe Operating Area. P(pk), PEAK TRANIENT POWER (W) INLE PULE R θjc = 2.9 C/W T A = 25 C..... t, TIME (sec) Figure. ingle Pulse Maximum Power issipation. r(t), NORMALIZE EFFECTIVE TRANIENT THERMAL REITANCE. = INLE PULE t, TIME (sec) R θjc (t) = r(t) * R θjc R θjc = 2.9 C/W P(pk t t 2 T J - T A = P * R θjc (t) uty Cycle, = t / t 2 Figure. Transient Thermal Response Curve Thermal characterization performed using the conditions described in Note b. Transient thermal response will change depending on the circuit board design. FP63L/FB63L Rev E(W)

5 TRAEMARK The following are registered and unregistered trademarks Fairchild emiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACEx ActiveArray Bottomless CoolFET CROVOLT OME EcoPARK E 2 CMO TM Enigna TM FACT ICLAIMER FAIRCHIL EMICONUCTOR REERVE THE RIHT TO MAKE CHANE WITHOUT FURTHER NOTICE TO ANY PROUCT HEREIN TO IMPROVE RELIABILITY, FUNCTION OR EIN. FAIRCHIL OE NOT AUME ANY LIABILITY ARIIN OUT OF THE APPLICATION OR UE OF ANY PROUCT OR CIRCUIT ECRIBE HEREIN; NEITHER OE IT CONVEY ANY LICENE UNER IT PATENT RIHT, NOR THE RIHT OF OTHER. LIFE UPPORT POLICY FAIRCHIL PROUCT ARE NOT AUTHORIZE FOR UE A CRITICAL COMPONENT IN LIFE UPPORT EVICE OR YTEM WITHOUT THE EXPRE WRITTEN APPROVAL OF FAIRCHIL EMICONUCTOR CORPORATION. As used herein:. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in significant injury to the user. PROUCT TATU EFINITION efinition of Terms FACT Quiet eries FAT FATr FRFET lobaloptoisolator TO HieC I 2 C Impliedisconnect IOPLANAR Across the board. Around the world. The Power Franchise Programmable Active roop LittleFET MICROCOUPLER MicroFET MicroPak MICROWIRE MX MXPro OCX OCXPro OPTOLOIC OPTOPLANAR PACMAN POP Power247 PowerTrench QFET Q QT Optoelectronics Quiet eries RapidConfigure RapidConnect ILENT WITCHER MART TART PM tealth uperot A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. atasheet Identification Product tatus efinition uperot -6 uperot -8 yncfet TinyLogic TINYOPTO TruTranslation UHC UltraFET VCX Advance Information Preliminary No Identification Needed Formative or In esign First Production Full Production This datasheet contains the design specifications for product development. pecifications may change in any manner without notice. This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild emiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains final specifications. Fairchild emiconductor reserves the right to make changes at any time without notice in order to improve design. Obsolete Not In Production This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. Rev. I5

Features. Max r DS(on) = 50 V GS = -10 V, I D = -4A. Max r DS(on) = 75 V GS = -4.5 V, I D = -3.4A. RoHS Compliant

Features. Max r DS(on) = 50 V GS = -10 V, I D = -4A. Max r DS(on) = 75 V GS = -4.5 V, I D = -3.4A. RoHS Compliant FC58AP Single P-Channel Logic Level PowerTrench MOSFET -3V, -A, 5mΩ General escription This P-Channel Logic Level MOSFET is produced using Fairchild's advanced PowerTrench process. It has been optimized