Is Now Part of To learn more about ON Semiconductor, please visit our website at

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1 Is Now Part of To learn more about ON Semiconductor, please visit our website at ON Semiconductor and the ON Semiconductor logo are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor s product/patent coverage may be accessed at ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by ON Semiconductor. Typical parameters which may be provided in ON Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including Typicals must be validated for each customer application by customer s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.

2 FGPF7N33BT 33V, 7A PDP IGBT Features High current capability Low saturation voltage: V CE(sat) I C = 7A High input impedance Fast switching RoHS Compliant Applications PDP System General Description November 28 tm Using Novel Trench IGBT Technology, Fairchild s new series of trench IGBTs offer the optimum performance for PDP applications where low conduction and switching losses are essential. G C E TO-22F Absolute Maximum Ratings T C = 25 C unless otherwise noted Symbol Description Ratings Units V CES Collector to Emitter Voltage 33 V V GES Gate to Emitter Voltage ± 3 V I Cpulse() * Pulsed Collector 6 A I C pulse(2) * Pulsed Collector 22 A P D Maximum Power 48 W Maximum Power T C = o C 9 W T J, T stg Operating Junction Temperature and Storage Temperrature -55 to +5 o C T L Maximum Lead Temp. for soldering Purposes, /8 from case for 5 seconds 3 o C Thermal Characteristics Symbol Parameter Typ. Max. Units R θjc (IGBT) Thermal Resistance, Junction to Case o C/W R θja Thermal Resistance, Junction to Ambient -- 4 o C/W Notes: : Repetitive test, Pulse width=usec, Duty=. 2: Half Sine Wave, D<., pluse width < 5usec *I C _pulse limited by max Tj 28 Fairchild Semiconductor Corporation

3 Package Marking and Ordering Information Packaging Max Qty Device Marking Device Package Type Qty per Tube per Box FGPF7N33BT FGPF7N33BTTU TO-22F Tube 5ea -- Electrical Characteristics of the IGBT T C = 25 C unless otherwise noted Symbol Parameter Test Conditions Min. Typ. Max. Units Off Characteristics BV CES Collector to Emitter Breakdown Voltage V GE = V, I C = 25µA V B VCES / T J Temperature Coefficient of Breakdown Voltage V GE = V, I C = 25uA V/ o C I CES Collector Cut-Off Current V CE = V CES, V GE = V µa I GES G-E Leakage Current V GE = V GES, V CE = V ±4 na On Characteristics V GE(th) G-E Threshold Voltage I C = 25µA, V CE = V GE V I C = 2A, V GE = 5V V V CE(sat) Collector to Emitter Saturation Voltage I C = 4A, V GE = 5V, V I C = 7A, V GE = 5V, V I C = 7A, V GE = 5V, V Dynamic Characteristics C ies Input Capacitance pf C oes Output Capacitance V CE = 3V, V GE = V, f = MHz pf C res Reverse Transfer Capacitance pf Switching Characteristics t d(on) Turn-On Delay Time ns t r Rise Time V CC = 2V, I C = 2A, R G = 5Ω, V GE = 5V, ns t d(off) Turn-Off Delay Time Resistive Load, ns t f Fall Time ns t d(on) Turn-On Delay Time ns t r Rise Time V CC = 2V, I C = 2A, R G = 5Ω, V GE = 5V, ns t d(off) Turn-Off Delay Time Resistive Load, ns t f Fall Time ns Q g Total Gate Charge nc Q ge Gate to Emitter Charge V CE = 2V, I C = 2A, V GE = 5V nc Q gc Gate to Collector Charge nc 2

4 Typical Performance Characteristics Figure. Typical Output Characteristics Collector Current, IC [A] V 2V 2V V V Figure 2. Typical Output Characteristics Collector Current, IC [A] V 5V 2V V V Figure 3. Typical Saturation Voltage Characteristics Collector Current, IC [A] V GE = 5V Collector Current, Ic [A] Figure 4. Transfer Characteristics Vce = 2V Tc=25 o C Tc=25 o C Gate-Emitter Voltage, Vge [V] Figure 5. Saturation Voltage vs. Case Temperature at Variant Current Level Collector-Emitter Voltage, VCE [V] V GE = 5V 7A 4A I C = 2A Collector-EmitterCase Temperature, T C [ o C] Figure 6. Saturation Voltage vs. V GE Collector-Emitter Voltage, VCE [V] A 7A 4 I C = 2A Gate-Emitter Voltage, V GE [V] 3

5 Typical Performance Characteristics Figure 7. Saturation Voltage vs. V GE Collector-Emitter Voltage, VCE [V] A 4 7A I C = 2A Gate-Emitter Voltage, V GE [V] Figure 8. Capacitance Characteristics Capacitance [pf] C ies C oes C res V GE = V, f = MHz 3 Figure 9. Gate charge Characteristics Gate-Emitter Voltage, VGE [V] V CC = V 2V Gate Charge, Q g [nc] Figure. Turn-on Characteristics vs. Gate Resistance 2 Collector Current, Ic [A] Figure. SOA Characteristics 5 Single Nonrepetitive ms ms. Pulse Curves must be derated linearly with increase in temperature.. 4 DC µs µs Figure 2. Turn-off Characteristics vs. Gate Resistance t r t f Switching Time [ns] t d(on) V CC = 2V, V GE = 5V I C = 2A Gate Resistance, R G [Ω] Switching Time [ns] t d(off) V CC = 2V, V GE = 5V I C = 2A Gate Resistance, R G [Ω] 4

6 Typical Performance Characteristics Figure 3. Turn-on Characteristics vs. Collector Current Switching Time [ns] V GE = 5V, R G = 5Ω t r t d(on) Switching Time [ns] Figure 4. Turn-off Characteristics vs. Collector Current V GE = 5V, R G = 5Ω t f t d(off) Collector Current, I C [A] Collector Current, I C [A] Figure 5. Switching Loss vs. Gate Resistance Figure 6. Switching Loss vs. Collector Current 3 E off E off Switching Loss [mj] E on V CC = 2V, V GE = 5V I C = 2A Gate Resistance, R G [Ω] Switching Loss [mj] E on V GE = 5V, R G = 5Ω Collector Current, I C [A] Figure 7. Turn off Switching SOA Characteristics 4 Collector Current, IC [A] Safe Operating Area V GE = 5V, 6 5

7 Typical Performance Characteristics Thermal Response [Zthjc] Figure 8.Transient Thermal Impedance of IGBT single pulse Duty Factor, D = t/t2 Peak T j = Pdm x Zthjc + T C E-3 E-5 E-4 E-3.. Rectangular Pulse Duration [sec] P DM t t 2 6

8 Mechanical Dimensions 5.8 ± ±. TO-22F.6 ±.2 ø3.8 ± ±.2 (7.) (.7) 6.68 ±.2 (.x45 ) 5.87 ± ±.3 MAX.47.8 ±. (3 ).35 ±. # ± TYP [2.54 ±.2] 2.54TYP [2.54 ±.2] 9.4 ± ±.2 Dimensions in Millimeters 7

9 tm tm tm TRADEMARKS The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is not intended to be an exhaustive list of all such trademarks. Build it Now CorePLUS CorePOWER CROSSVOLT CTL Current Transfer Logic EcoSPARK EfficentMax EZSWITCH * Fairchild Fairchild Semiconductor FACT Quiet Series FACT FAST FastvCore FlashWriter * FPS F-PFS FRFET Global Power Resource SM Green FPS Green FPS e-series GTO IntelliMAX ISOPLANAR MegaBuck MICROCOUPLER MicroFET MicroPak MillerDrive MotionMax Motion-SPM OPTOLOGIC OPTOPLANAR PDP SPM Power-SPM PowerTrench PowerXS Programmable Active Droop QFET QS Quiet Series RapidConfigure Saving our world, mw /W /kw at a time SmartMax SMART START SPM STEALTH SuperFET SuperSOT -3 SuperSOT -6 SuperSOT -8 SupreMOS SyncFET The Power Franchise * EZSWITCH and FlashWriter are trademarks of System General Corporation, used under license by Fairchild Semiconductor. TinyBoost TinyBuck TinyLogic TINYOPTO TinyPower TinyPWM TinyWire µserdes UHC Ultra FRFET UniFET VCX VisualMax XS DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION, OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. THESE SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILD S WORLDWIDE TERMS AND CONDITIONS, SPECIFICALLY THE WARRANTY THEREIN, WHICH COVERS THESE PRODUCTS. LIFE SUPPORT POLICY FAIRCHILD S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein:. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body or (b) support or sustain life, and (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in a significant injury of the user. ANTI-COUNTERFEITING POLICY Fairchild Semiconductor Corporation s Anti-Counterfeiting Policy. Farichild s Anti-Counterfeiting Policy is also stated on our external website, under Sales Support. Counterfeiting of semiconductor parts is a growing problem in the industry. All manufactures of semiconductor products are experiencing counterfeiting of their parts. Customers who inadvertently purchase counterfeit parts experience many problems such as loss of brand reputation, substandard performance, failed application, and increased cost of production and manufacturing delays. Fairchild is taking strong measures to protect ourselves and our customers from the proliferation of counterfeit parts. Farichild strongly encourages customers to purchase Farichild parts either directly from Fairchild or from Authorized Fairchild Distributors who are listed by country on our web page cited above. Products customers buy either from fairchild directly or from Authorized Fairchild Distributors are genuine parts, have full traceability, meet Fairchild s quality standards for handing and storage and provide access to Farichild s full range of up-to-date technical and product information. Fairchild and our Authorized Distributors will stand behind all warranties and will appropriately address and warranty issues that may arise. Fairchild will not provide any warranty coverage or other assistance for parts bought from Unauthorized Sources. Farichild is committed to combat this global problem and encourage our customers to do their part in stopping this practice by buying direct or from authorized distributors. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Definition Advance Information Formative / In Design 2. A critical component in any component of a life support, device, or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. Datasheet contains the design specifications for product development. Specifications may change in any manner without notice. Preliminary No Identification Needed Obsolete First Production Full Production Not In Production Datasheet contains preliminary data; supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve design. Datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve the design. Datasheet contains specifications on a product that is discontinued by Fairchild Semiconductor. The datasheet is for reference information only. 8 Rev. I37

10 ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor s product/patent coverage may be accessed at Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by ON Semiconductor. Typical parameters which may be provided in ON Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including Typicals must be validated for each customer application by customer s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLICATION ORDERING INFORMATION LITERATURE FULFILLMENT: Literature Distribution Center for ON Semiconductor 952 E. 32nd Pkwy, Aurora, Colorado 8 USA Phone: or Toll Free USA/Canada Fax: or Toll Free USA/Canada orderlit@onsemi.com Semiconductor Components Industries, LLC N. American Technical Support: Toll Free USA/Canada Europe, Middle East and Africa Technical Support: Phone: Japan Customer Focus Center Phone: ON Semiconductor Website: Order Literature: For additional information, please contact your local Sales Representative

11 Mouser Electronics Authorized Distributor Click to View Pricing, Inventory, Delivery & Lifecycle Information: Fairchild Semiconductor: FGPF7N33BTTU