Is Now Part of. To learn more about ON Semiconductor, please visit our website at

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1 Is Now Part of To learn more about ON Semiconductor, please visit our website at Please note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclature that utilizes an underscore (_), the underscore (_) in the Fairchild part numbers will be changed to a dash (-). This document may contain device numbers with an underscore (_). Please check the ON Semiconductor website to verify the updated device numbers. The most current and up-to-date ordering information can be found at Please any questions regarding the system integration to Fairchild_questions@onsemi.com. ON Semiconductor and the ON Semiconductor logo are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor s product/patent coverage may be accessed at ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by ON Semiconductor. Typical parameters which may be provided in ON Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including Typicals must be validated for each customer application by customer s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.

2 FGL4N2AND 2V NPT IGBT Features High speed switching Low saturation voltage : V CE(sat) = 2.6 I C = 4A High input impedance CO-PAK, IGBT with FRD : t rr = 75ns (typ.) Applications Induction Heating, UPS, AC & DC motor controls and general purpose inverters. Description February 28 Employing NPT technology, Fairchild s AND series of IGBTs provides low conduction and switching losses. The AND series offers an solution for application such as induction heating (IH), motor control, general purpose inverters and uninterruptible power supplies (UPS). tm C G G C E Absolute Maximum Ratings TO-264 E Symbol Parameter FGL4N2AND Units V CES Collector-Emitter Voltage 2 V S Gate-Emitter Voltage ±25 V Collector 64 A I C Collector = C 4 A I CM() Pulsed Collector Current 6 A I F Diode Continuous Forward = C 4 A I FM Diode Maximum Forward Current 24 A P D Maximum Power = C 2 W Maximum Power 5 W SCWT Short Circuit Withstand Time, V CE = 6V, = 5V, = 25 C µs T J Operating Junction Temperature -55 to +5 C T STG Storage Temperature Range -55 to +5 C T L Maximum Lead Temp. for Soldering Purposes, /8 from Case for 5 seconds 3 C Notes: () Pulse width limited by max. junction temperature Thermal Characteristics Symbol Parameter Typ. Max. Units R θjc (IGBT) Thermal Resistance, Junction-to-Case C/W R θjc (DIODE) Thermal Resistance, Junction-to-Case --.7 C/W R θja Thermal Resistance, Junction-to-Ambient C/W 28 Fairchild Semiconductor Corporation

3 Package Marking and Ordering Information Device Marking Device Package Reel Size Tape Width Quantity FGL4N2AND FGL4N2AND TO Electrical Characteristics of the IGBT unless otherwise noted Symbol Parameter Conditions Min. Typ. Max. Units Off Characteristics BV CES Collector-Emitter Breakdown Voltage = V, I C = ma V BV CES / T J Temperature Coefficient of Breakdown Voltage = V, I C = ma V/ C I CES Collector Cut-Off Current V CE = V CES, = V ma I GES G-E Leakage Current = S, V CE = V ±25 na On Characteristics (th) G-E Threshold Voltage I C = 25µA, V CE = V V CE(sat) Collector to Emitter Saturation Voltage I C = 4A, = 5V V I C = 4A, = 5V, = 25 C V I C = 64A, = 5V V Dynamic Characteristics C ies Input Capacitance pf C oes Output Capacitance V CE = 3V, = V f = MHz pf c res Reverse Transfer Capacitance pf Switching Characteristics t d(on) Turn-On Delay Time ns t r Rise Time ns t d(off) Turn-Off Delay Time V CC = 6V, I C = 4A, ns t f Fall Time R G = 5Ω, = 5V, ns E on Turn-On Switching Loss Inductive Load, mj E off Turn-Off Switching Loss mj E ts Total Switching Loss mj t d(on) Turn-On Delay Time ns t r Rise Time ns t d(off) Turn-Off Delay Time V CC = 6V, I C = 4A, ns t f Fall Time R G = 5Ω, = 5V, ns E on Turn-On Switching Loss Inductive Load, = 25 C mj E off Turn-Off Switching Loss mj E ts Total Switching Loss mj Q g Total Gate charge nc Q ge Gate-Emitter Charge V CE = 6V, I C = 4A, = 5V nc Q gc Gate-Collector Charge nc 2

4 Electrical Characteristics of DIODE unless otherwise noted Symbol Parameter Test Conditions Min. Typ. Max. Units V FM t rr I rr Q rr Diode Forward Voltage Diode Reverse Recovery Time Diode Peak Reverse Recovery Current Diode Reverse Recovery Charge I F = 4A I F = 4A, di/dt = 2A/µs = 25 C = 25 C = 25 C = 25 C V ns A nc 3

5 Typical Performance Characteristics Figure. Typical Output Characteristics Collector Current, I C V 7V 5V 2V = V Figure 2. Typical Saturation Voltage Characteristics Collector Current, I C = 5V = 25 C Figure 3. Saturation Voltage vs. Case Temperature at Variant Current Level Figure 4. Load Current vs. Frequency 5 = 5V 8 7 V CC = 6V Load Current : peak of square wave A 4A I C = 2A Load Current Duty cycle : 5% = C Power Dissipation = W. Case Temperature, [ C] Frequency [khz] Figure 5. Saturation Voltage vs. Figure 6. Saturation Voltage vs. 2 2 = 25 C A 4A I C = 2A A 4A I C = 2A Gate-Emitter Voltage, Gate-Emitter Voltage, 4

6 Typical Performance Characteristics (Continued) Figure 7. Capacitance Characteristics Capacitance [pf] Ciss Coss Crss = V, f = MHz Figure 8. Turn-On Characteristics vs. Gate Resistance Switching Time [ns] tr td(on) V CC = 6V, = ±5V I C = 4A = 25 C Gate Resistance, R G [Ω] Figure 9. Turn-Off Characteristics vs. Gate Resistance Figure. Switching Loss vs. Gate Resistance Switching Time [ns] V CC = 6V, = ±5V, I C = 4A = 25 C td(off) tf Switching Loss [mj] V CC = 6V, = ±5V I C = 4A = 25 C Eon Eoff Gate Resistance, R G [Ω] Figure. Turn-On Characteristics vs. Collector Current Gate Resistance, R G [Ω] Figure 2. Turn-Off Characteristics vs. Collector Current = ±5V, R G = 5Ω = 25 C tr = ±5V, R G = 5Ω = 25 C td(off) Switching Time [ns] td(on) Switching Time [ns] tf Collector Current, I C Collector Current, I C 5

7 Typical Performance Characteristics (Continued) Figure 3. Switching Loss vs. Collector Current Switching Loss [mj]. = ±5V, R G = 5Ω = 25 C Eon Eoff Collector Current, I C Figure 4. Gate Charge Characteristics Gate-Emitter Voltage, R L = 5Ω Vcc = 2V 4V 6V Gate Charge, Q g [nc] Figure 5. SOA Characteristics Figure 6. Turn-Off SOA Ic MAX (Pulsed) Ic MAX (Continuous) 5µs µs Collector Current, Ic DC Operation ms Single Nonrepetitive. Pulse Tc = 25 o C Curves must be derated linearly with increase in temperature.. Collector Current, I C Safe Operating Area = 5V, = 25 o C Collector - Emitter Voltage, V CE Figure 7. Forward Characteristics Figure 8. Reverse Recovery Current Forward Current, I F T J = 25 o C T J = 25 o C = 25 o C Reverse Recovery Currnet, I rr di/dt = 2A/µs di/dt = A/µs = 25 o C Forward Voltage, V F Forward Current, I F 6

8 Typical Performance Characteristics (Continued) Figure 9. Stored Charge Figure 2. Reverse Recovery Time Reverse Recovery Time, t rr [ns] 9 di/dt = 2A/µs 8 7 di/dt = A/µs Forward Current, I F Stored Recovery Charge, Q rr [nc] 4 3 di/dt = 2A/µs 2 di/dt = A/µs Forward Current, I F Figure 2. Transient Thermal Impedance of IGBT Thermal Response [Zthjc] Pdm.2 t t. single pulse t2 t2 Duty factor D = t t // t2 t2 Peak Tj Tj = Pdm Zthjc + E-3 E-5 E-4 E-3.. Rectangular Pulse Duration [sec] 7

9 Mechanical Dimensions.5 ±.2 (9.) (.) (9.) 2. ±.2 (8.3) (8.3) (R2.) (R.) ø3.3 ±.2 (7.) (7.) TO-264 (.) (2.) (.5) 2. ±.2 6. ±.2 (2.) 4.9 ±.2 (.5) (.5) 2.5 ±.2 3. ± ±.5 (.5) 5.45TYP [5.45 ±.3] 5.45TYP [5.45 ±.3] ±.3 5. ± ±.2 (.5) (.5) (4.) 2.5 ±. (2.8) Dimensions in Millimeters 8

10 tm tm tm TRADEMARKS The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidianries, and is not intended to be an exhaustive list of all such trademarks. ACEx Build it Now CorePLUS CROSSVOLT CTL Current Transfer Logic EcoSPARK EZSWITCH * Fairchild Fairchild Semiconductor FACT Quiet Series FACT FAST FastvCore FlashWriter * FPS FRFET Global Power Resource SM Green FPS Green FPS e-series GTO i-lo IntelliMAX ISOPLANAR MegaBuck MICROCOUPLER MicroFET MicroPak MillerDrive Motion-SPM OPTOLOGIC OPTOPLANAR PDP-SPM Power22 POWEREDGE Power-SPM PowerTrench Programmable Active Droop QFET QS QT Optoelectronics Quiet Series RapidConfigure SMART START SPM STEALTH SuperFET SuperSOT -3 SuperSOT -6 SuperSOT -8 SupreMOS SyncFET The Power Franchise TinyBoost TinyBuck TinyLogic TINYOPTO TinyPower TinyPWM TinyWire µserdes UHC Ultra FRFET UniFET VCX * EZSWITCH and FlashWriter are trademarks of System General Corporation, used under license by Fairchild Semiconductor. DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION, OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. THESE SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILD S WORLDWIDE TERMS AND CONDITIONS, SPECIFICALLY THE WARRANTY THEREIN, WHICH COVERS THESE PRODUCTS. LIFE SUPPORT POLICY FAIRCHILD S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein:. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body or (b) support or sustain life, and (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in a significant injury to the user. 2. A critical component in any component of a life support, device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Definition Advance Information Preliminary No Identification Needed Obsolete Formative or In Design First Production Full Production Not In Production This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data; supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve design. This datasheet contains specifications on a product that has been discontinued by Fairchild Semiconductor. The datasheet is printed for reference information only. Rev. I33 9

11 ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor s product/patent coverage may be accessed at Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by ON Semiconductor. Typical parameters which may be provided in ON Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including Typicals must be validated for each customer application by customer s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLICATION ORDERING INFORMATION LITERATURE FULFILLMENT: Literature Distribution Center for ON Semiconductor 952 E. 32nd Pkwy, Aurora, Colorado 8 USA Phone: or Toll Free USA/Canada Fax: or Toll Free USA/Canada orderlit@onsemi.com Semiconductor Components Industries, LLC N. American Technical Support: Toll Free USA/Canada Europe, Middle East and Africa Technical Support: Phone: Japan Customer Focus Center Phone: ON Semiconductor Website: Order Literature: For additional information, please contact your local Sales Representative

12 Mouser Electronics Authorized Distributor Click to View Pricing, Inventory, Delivery & Lifecycle Information: ON Semiconductor: FGL4N2ANDTU