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1 Is Now Part of To learn more about ON Semiconductor, please visit our website at ON Semiconductor and the ON Semiconductor logo are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor s product/patent coverage may be accessed at ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by ON Semiconductor. Typical parameters which may be provided in ON Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including Typicals must be validated for each customer application by customer s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.

2 FDB386 N-Channel PowerTrench MOSFET V, 3 A, 37 mω Features Max r DS(on) = 37 mω at V GS = V, I D = 5.9 A High performance trench technology for extremely low r DS(on) % UIL tested RoHS Compliant General Description March 9 This N-Channel MOSFET is rugged gate version of Fairchild Semiconductor s advanced Power Trench process. This part is tailored for low r DS(on) and low Qg figure of merit, with avalanche ruggedness for a wide range of switching applications. Applications DC-AC Conversion Synchronous Rectifier D D G S TO-63AB FDB Series G S MOSFET Maximum Ratings T C = 5 C unless otherwise noted Symbol Parameter Ratings Units V DS Drain to Source Voltage V V GS Gate to Source Voltage ± V I D -Continuous T A = 5 C (Note a) 6.4 A Drain Current -Continuous (Silicon limited) T C = 5 C 3 -Pulsed 6 E AS Single Pulse Avalanche Energy (Note 3) 96 mj Power Dissipation T P C = 5 C 7 D Power Dissipation T A = 5 C (Note a) 3. W T J, T STG Operating and Storage Junction Temperature Range -55 to +5 C Thermal Characteristics R θjc Thermal Resistance, Junction to Case.75 R θja Thermal Resistance, Junction to Ambient (Note a) 4 Package Marking and Ordering Information C/W Device Marking Device Package Reel Size Tape Width Quantity FDB386 FDB386 TO-63AB 33 mm 4 mm 8 units

3 Electrical Characteristics T J = 5 C unless otherwise noted Symbol Parameter Test Conditions Min Typ Max Units Off Characteristics BV DSS Drain to Source Breakdown Voltage I D = 5 µa, V GS = V V BV DSS Breakdown Voltage Temperature T J Coefficient I D = 5 µa, referenced to 5 C 4 mv/ C I DSS Zero Gate Voltage Drain Current V DS = 8 V, V GS = V µa I GSS Gate to Source Leakage Current V GS = ± V, V DS = V ± na On Characteristics V GS(th) Gate to Source Threshold Voltage V GS = V DS, I D = 5 µa V V GS(th) T J Gate to Source Threshold Voltage Temperature Coefficient Dynamic Characteristics I D = 5 µa, referenced to 5 C - mv/ C V GS = V, I D = 5.9 A 3 37 r DS(on) Static Drain to Source On Resistance mω V GS = V, I D = 5.9 A, T J = 5 C g FS Forward Transconductance V DS = V, I D = 5.9 A 8 S C iss Input Capacitance 3 74 pf V DS = 5 V, V GS = V, C oss Output Capacitance 3 pf f = MHz C rss Reverse Transfer Capacitance 4 65 pf R g Gate Resistance.7 Ω Switching Characteristics t d(on) Turn-On Delay Time ns t r Rise Time V DD = 5 V, I D = 5.9 A, 6 ns t d(off) Turn-Off Delay Time V GS = V, R GEN = 6 Ω 7 3 ns t f Fall Time 3 ns Q g Total Gate Charge at V 3 nc Q gs Gate to Source Charge V DD = 5 V, I D = 5.9 A 6.9 nc Q gd Gate to Drain Miller Charge 5.4 nc Drain-Source Diode Characteristics V V SD Source to Drain Diode Forward Voltage GS = V, I S =. A (Note ).7. V V GS = V, I S = 5.9 A (Note ).8.3 t rr Reverse Recovery Time ns I F = 5.9 A, di/dt = A/µs Q rr Reverse Recovery Charge 37 6 nc Notes: : R θja is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. R θjc is guaranteed by design while R θja is determined by the user s board design. a. 4 C/W when mounted on a in pad of oz copper b. 6.5 C/W when mounted on a minimum pad. : Pulse Test: Pulse Width < 3 µs, Duty cycle <.%. 3: Starting T J = 5 C, L = 3 mh, I AS = 8 A, V DD = V, V GS = V.

4 Typical Characteristics T J = 5 C unless otherwise noted ID, DRAIN CURRENT (A) NORMALIZED DRAIN TO SOURCE ON-RESISTANCE Figure. I D = 5.9 A V GS = V V GS = V V GS = 8. V V GS = 7. V PULSE DURATION = 8 µs DUTY CYCLE =.5% MAX V GS = 6.5 V V GS = 6. V V DS, DRAIN TO SOURCE VOLTAGE (V) NORMALIZED DRAIN TO SOURCE ON-RESISTANCE V GS = V. PULSE DURATION = 8 µs DUTY CYCLE =.5% MAX On Region Characteristics Figure. Normalized On-Resistance vs Drain Current and Gate Voltage T J, JUNCTION TEMPERATURE ( o C) rds(on), DRAIN TO SOURCE ON-RESISTANCE (mω) V GS = 6. V V GS = 6.5 V I D, DRAIN CURRENT (A) I D = 5.9 A V GS = 7. V T J = 5 o C T J = 5 o C V GS = 8. V PULSE DURATION = 8 µs DUTY CYCLE =.5% MAX V GS, GATE TO SOURCE VOLTAGE (V) Figure 3. Normalized On Resistance vs Junction Temperature Figure 4. On-Resistance vs Gate to Source Voltage I D, DRAIN CURRENT (A) PULSE DURATION = 8 µs DUTY CYCLE =.5% MAX V DS = V T J = 5 o C T J = 5 o C T J = -55 o C V GS, GATE TO SOURCE VOLTAGE (V) IS, REVERSE DRAIN CURRENT (A).. V GS = V T J = 5 o C T J = 5 o C T J = -55 o C V SD, BODY DIODE FORWARD VOLTAGE (V) Figure 5. Transfer Characteristics Figure 6. Source to Drain Diode Forward Voltage vs Source Current 3

5 Typical Characteristics T J = 5 C unless otherwise noted VGS, GATE TO SOURCE VOLTAGE (V) IAS, AVALANCHE CURRENT (A) I D = 5.9 A Figure V DD = 5 V V DD = 5 V Q g, GATE CHARGE (nc) V DD = 75 V. V DS, DRAIN TO SOURCE VOLTAGE (V) Gate Charge Characteristics Figure 8. Capacitance vs Drain to Source Voltage T J = 5 o C T J = 5 o C T J = o C.. t AV, TIME IN AVALANCHE (ms) CAPACITANCE (pf) I D, DRAIN CURRENT (A) f = MHz V GS = V R θjc =.75 o C/W V GS = V C iss C oss C rss T C, CASE TEMPERATURE ( o C) Figure 9. Unclamped Inductive Switching Capability Figure. Maximum Continuous Drain Current vs Case Temperature 5 ID, DRAIN CURRENT (A) THIS AREA IS LIMITED BY r DS(on) SINGLE PULSE T J = MAX RATED R θjc =.75 o C/W T C = 5 o C us ms ms DC.. 3 V DS, DRAIN to SOURCE VOLTAGE (V) P(PK), PEAK TRANSIENT POWER (W) 4 3 V GS = V SINGLE PULSE R θjc =.75 o C/W T C = 5 o C t, PULSE WIDTH (sec) Figure. Forward Bias Safe Operating Area Figure. Single Pulse Maximum Power Dissipation 4

6 Typical Characteristics T J = 5 C unless otherwise noted NORMALIZED THERMAL IMPEDANCE, Z θjc.. DUTY CYCLE-DESCENDING ORDER D = SINGLE PULSE R θjc =.75 o C/W t, RECTANGULAR PULSE DURATION (sec) Figure 3. Junction-to-Case Transient Thermal Response Curve DUTY CYCLE-DESCENDING ORDER P DM t t NOTES: DUTY FACTOR: D = t /t PEAK T J = P DM x Z θjc x R θjc + T C NORMALIZED THERMAL IMPEDANCE, Z θja.. D = SINGLE PULSE R θja = 6.5 o C/W (Note b) P DM t t NOTES: DUTY FACTOR: D = t /t PEAK T J = P DM x Z θja x R θja + T A t, RECTANGULAR PULSE DURATION (sec) Figure 4. Junction-to-Ambient Transient Thermal Response Curve 5

7 tm tm tm Preliminary Datasheet TRADEMARKS The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is not intended to be an exhaustive list of all such trademarks. Build it Now CorePLUS CorePOWER CROSSVOLT CTL Current Transfer Logic EcoSPARK EfficentMax EZSWITCH * Fairchild Fairchild Semiconductor FACT Quiet Series FACT FAST FastvCore FlashWriter * FPS F-PFS FRFET Global Power Resource SM Green FPS Green FPS e-series GTO IntelliMAX ISOPLANAR MegaBuck MICROCOUPLER MicroFET MicroPak MillerDrive MotionMax Motion-SPM OPTOLOGIC OPTOPLANAR PDP SPM Power-SPM PowerTrench PowerXS Programmable Active Droop QFET QS Quiet Series RapidConfigure Saving our world, mw /W /kw at a time SmartMax SMART START SPM STEALTH SuperFET SuperSOT -3 SuperSOT -6 SuperSOT -8 SupreMOS SyncFET The Power Franchise * EZSWITCH and FlashWriter are trademarks of System General Corporation, used under license by Fairchild Semiconductor. TinyBoost TinyBuck TinyLogic TINYOPTO TinyPower TinyPWM TinyWire TriFault Detect µserdes UHC Ultra FRFET UniFET VCX VisualMax XS DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION, OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. THESE SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILD S WORLDWIDE TERMS AND CONDITIONS, SPECIFICALLY THE WARRANTY THEREIN, WHICH COVERS THESE PRODUCTS. LIFE SUPPORT POLICY FAIRCHILD S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein:. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body or (b) support or sustain life, and (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in a significant injury of the user. PRODUCT STATUS DEFINITIONS Definition of Terms. A critical component in any component of a life support, device, or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. ANTI-COUNTERFEITING POLICY Fairchild Semiconductor Corporation s Anti-Counterfeiting Policy. Farichild s Anti-Counterfeiting Policy is also stated on our external website,, under Sales Support. Counterfeiting of semiconductor parts is a growing problem in the industry. All manufactures of semiconductor products are experiencing counterfeiting of their parts. Customers who inadvertently purchase counterfeit parts experience many problems such as loss of brand reputation, substandard performance, failed application, and increased cost of production and manufacturing delays. Fairchild is taking strong measures to protect ourselves and our customers from the proliferation of counterfeit parts. Farichild strongly encourages customers to purchase Farichild parts either directly from Fairchild or from Authorized Fairchild Distributors who are listed by country on our web page cited above. Products customers buy either from fairchild directly or from Authorized Fairchild Distributors are genuine parts, have full traceability, meet Fairchild s quality standards for handing and storage and provide access to Farichild s full range of up-to-date technical and product information. Fairchild and our Authorized Distributors will stand behind all warranties and will appropriately address and warranty issues that may arise. Fairchild will not provide any warranty coverage or other assistance for parts bought from Unauthorized Sources. Farichild is committed to combat this global problem and encourage our customers to do their part in stopping this practice by buying direct or from authorized distributors. Datasheet Identification Product Status Definition Advance Information Formative / In Design Datasheet contains the design specifications for product development. Specifications may change in any manner without notice. Preliminary No Identification Needed First Production Full Production Datasheet contains preliminary data; supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve design. Datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve the design. Obsolete Not In Production Datasheet contains specifications on a product that is discontinued by Fairchild Semiconductor. The datasheet is for reference information only. 6 Rev. I38

8 ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor s product/patent coverage may be accessed at Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by ON Semiconductor. Typical parameters which may be provided in ON Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including Typicals must be validated for each customer application by customer s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLICATION ORDERING INFORMATION LITERATURE FULFILLMENT: Literature Distribution Center for ON Semiconductor 95 E. 3nd Pkwy, Aurora, Colorado 8 USA Phone: or Toll Free USA/Canada Fax: or Toll Free USA/Canada orderlit@onsemi.com Semiconductor Components Industries, LLC N. American Technical Support: Toll Free USA/Canada Europe, Middle East and Africa Technical Support: Phone: Japan Customer Focus Center Phone: ON Semiconductor Website: Order Literature: For additional information, please contact your local Sales Representative

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