FGD3040G2_F085 EcoSPARK 2 300mJ, 400V, N-Channel Ignition IGBT
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1 FGD34G2_F85 EcoSPARK 2 3mJ, 4V, N-Channel Ignition IGBT Features Applications April 22 SCIS Energy = 3mJ at T J = 25 o C Automotive lgnition Coil Driver Circuits Logic Level Gate Drive Coil On Plug Applications Qualified to AEC Q RoHS Compliant FGD34G2_F85 EcoSPARK 2 3mJ, 4V, N-Channel Ignition IGBT Package GATE EMITTER COLLECTOR JEDEC TO-252 Fairchild Semiconductor Corporation FGD34G2_F85 Rev.C
2 Device Maximum Ratings T A = 25 C unless otherwise noted Symbol Parameter Ratings Units BV CER Collector to Emitter Breakdown Voltage (I C = ma) 4 V BV ECS Emitter to Collector Voltage - Reverse Battery Condition (I C = ma) 28 V E SCIS25 Self Clamping Inductive Switching Energy (Note ) 3 mj E SCIS5 Self Clamping Inductive Switching Energy (Note 2) 7 mj I C25 Collector Current Continuous, at = 5.V, T C = 25 C 4 A I C Collector Current Continuous, at = 5.V, T C = C 25.6 A M Gate to Emitter Voltage Continuous ± V Power Dissipation Total, at T C = 25 C 5 W P D Power Dissipation Derating, for T C > 25 o C W/ o C T J Operating Junction Temperature Range -55 to +75 o C T STG Storage Junction Temperature Range -55 to +75 o C T L Max. Lead Temp. for Soldering (Leads at.6mm from case for s) 3 o C T PKG Reflow soldering according to JESD2C 26 o C ESD HBM-Electrostatic Discharge Voltage atpf, 5Ω 4 kv CDM-Electrostatic Discharge Voltage at Ω 2 kv Package Marking and Ordering Information Device Marking Device Package Reel Size Tape Width Quantity FGD34G2 FGD34G2_F85 TO252 33mm 6mm 25 units Electrical Characteristics T A = 25 C unless otherwise noted Symbol Parameter Test Conditions Min Typ Max Units Off State Characteristics BV CER BV CES Collector to Emitter Breakdown Voltage Collector to Emitter Breakdown Voltage I CE = 2mA, =, R GE = KΩ, T J = -4 to 5 o C I CE = ma, = V, R GE =, T J = -4 to 5 o C V V BV ECS Emitter to Collector Breakdown Voltage I CE = -2mA, = V, V T J = 25 C BS Gate to Emitter Breakdown Voltage I GES = ±2mA ±2 ±4 - V I CER Collector to Emitter Leakage Current V CE = 25V, R GE = KΩ T J = 25 o C μa T J = 5 o C - - ma I ECS Emitter to Collector Leakage Current V EC = 24V, T J = 25 o C - - T J = 5 o C ma R Series Gate Resistance Ω R 2 Gate to Emitter Resistance K - 3K Ω FGD34G2_F85 EcoSPARK 2 3mJ, 4V, N-Channel Ignition IGBT On State Characteristics V CE(SAT) Collector to Emitter Saturation Voltage I CE = 6A, = 4V, T J = 25 o C V V CE(SAT) Collector to Emitter Saturation Voltage I CE = A, = 4.5V, T J = 5 o C V V CE(SAT) Collector to Emitter Saturation Voltage I CE = 5A, = 4.5V, T J = 5 o C V E SCIS Self Clamped Inductive Switching L = 3. mhy,rg = KΩ, VGE = 5V, (Note ) TJ = 25 C Fairchild Semiconductor Corporation FGD34G2_F85 Rev.C 2
3 Electrical Characteristics T A = 25 C unless otherwise noted Symbol Parameter Test Conditions Min Typ Max Units Dynamic Characteristics I Q G(ON) Gate Charge CE = A, V CE = 2V, nc = 5V T (TH) Gate to Emitter Threshold Voltage I CE = ma, V CE = V J = 25 o C GE, V T J = 5 o C P Gate to Emitter Plateau Voltage V CE = 2V, I CE = A V Switching Characteristics t d(on)r Current Turn-On Delay Time-Resistive V CE = 4V, R L = Ω μs t rr Current Rise Time-Resistive = 5V, R G = KΩ T J = 25 o C, μs t d(off)l Current Turn-Off Delay Time-Inductive V CE = 3V, L = mh, μs t fl Current Fall Time-Inductive = 5V, R G = KΩ I CE = 6.5A, T J = 25 o C, μs Thermal Characteristics R θjc Thermal Resistance Junction to Case - - o C/W Notes: : Self Clamping Inductive Switching Energy (E SCIS25 ) of 3 mj is based on the test conditions that starting Tj=25 o C; L=3mHy, I SCIS =4.2A,V CC =V during inductor charging and V CC =V during the time in clamp. 2: Self Clamping Inductive Switching Energy (E SCIS5 ) of 7 mj is based on the test conditions that starting Tj=5 o C; L=3mHy, I SCIS =.8A,V CC =V during inductor charging and V CC =V during the time in clamp. FGD34G2_F85 EcoSPARK 2 3mJ, 4V, N-Channel Ignition Fairchild Semiconductor Corporation FGD34G2_F85 Rev.C 3
4 Typical Performance Curves ISCIS, INDUCTIVE SWITCHING CURRENT (A) VCE, COLLECTOR TO EMITTER VOLTAGE (V) R G = KΩ, = 5V, V CE = V T J = 5 o C T J = 25 o C SCIS Curves valid for V clamp Voltages of <43V t CLP, TIME IN CLAMP (μs) Figure. Self Clamped Inductive Switching Current vs. Time in Clamp = 3.7V = 8V = 5V = 4.V = 4.5V I CE = 6A T J, JUNCTION TEMPERTURE ( o C) ISCIS, INDUCTIVE SWITCHING CURRENT (A) VCE, COLLECTOR TO EMITTER VOLTAGE (V) L, INDUCTANCE (mhy) Figure T J = 5 o C T J = 25 o C R G = KΩ, = 5V, V CE = V SCIS Curves valid for V clamp Voltages of <43V Self Clamped Inductive Switching Current vs. Inductance = 3.7V = 8V = 4.V = 5V = 4.5V I CE = A T J, JUNCTION TEMPERTURE ( o C) FGD34G2_F85 EcoSPARK 2 3mJ, 4V, N-Channel Ignition IGBT Figure 3. Collector to Emitter On-State Voltage vs. Junction Temperature Figure 4. Collector to Emitter On-State Voltage vs. Junction Temperature ICE, COLLECTOR TO EMITTER CURRENT (A) 3 2 = 8.V = 5.V = 4.5V = 4.V = 3.7V T J = -4 o C V CE, COLLECTOR TO EMITTER VOLTAGE (V) ICE, COLLECTOR TO EMITTER CURRENT (A) 3 2 = 8.V = 5.V = 4.5V = 4.V = 3.7V T J = 25 o C V CE, COLLECTOR TO EMITTER VOLTAGE (V) Figure 5. Collector to Emitter On-State Voltage vs. Collector Current Figure 6. Collector to Emitter On-State Voltage vs. Collector Fairchild Semiconductor Corporation FGD34G2_F85 Rev.C 4
5 Typical Performance Curves (Continued) ICE, COLLECTOR TO EMITTER CURRENT (A) 3 2 Figure 7. ICE, DC COLLECTOR CURRENT (A) = 8.V = 5.V = 4.5V = 4.V = 3.7V T J = 75 o C V CE, COLLECTOR TO EMITTER VOLTAGE (V) 5 Figure 9. Collector to Emitter On-State Voltage vs. Collector Current = 5.V T C, CASE TEMPERATURE( o C) DC Collector Current vs. Case Temperature ICE, COLLECTOR TO EMITTER CURRENT (A) VGS, GATE TO EMITTER VOLTAGE(V) 3 2 PULSE DURATION = 8μs DUTY CYCLE =.5% MAX V CE = 5V T J = 25 o C , GATE TO EMITTER VOLTAGE (V) Figure 8. T J = 75 o C I CE = A, T J = 25 o C T J = -4 o C Transfer Characteristics V CE = 6V V CE = 2V Q g, GATE CHARGE(nC) Figure. Gate Charge FGD34G2_F85 EcoSPARK 2 3mJ, 4V, N-Channel Ignition IGBT V TH, THRESHOLD VOLTAGE (V) V CE = I CE = ma T J, JUNCTION TEMPERATURE( o C) LEAKAGE CURRENT (μa) V ECS = 24V V CES = 3V V CES = 25V T J, JUNCTION TEMPERATURE ( o C) Figure. Threshold Voltage vs. Junction Temperature Figure 2. Leakage Current vs. Junction Fairchild Semiconductor Corporation FGD34G2_F85 Rev.C 5
6 Typical Performance Curves (Continued) SWITCHING TIME (μs) BV CER, BREAKDOWN VOLTAGE (V) I CE = 6.5A, = 5V, R G = KΩ T J, JUNCTION TEMPERATURE ( o C) Figure I CER = ma Resistive t OFF Inductive t OFF Resistive t ON Switching Time vs. Junction Temperature CAPACITANCE (pf) Figure 4. T J = 25 o C C RES C OES Figure 5. Break down Voltage vs. Series Gate Resistance C IES f = MHz = V V DS, DRAIN TO SOURCE VOLTAGE (V) Capacitance vs. Collector to Emitter Voltage T J = 75 o C T J = -4 o C 38 6 R G, SERIES GATE RESISTANCE (Ω) FGD34G2_F85 EcoSPARK 2 3mJ, 4V, N-Channel Ignition IGBT NORMALIZED THERMAL IMPEDANCE, Z θjc 2. DUTY CYCLE - DESCENDING ORDER D = SINGLE PULSE t, RECTANGULAR PULSE DURATION(s) Figure 6. IGBT Normalized Transient Thermal Impedance, Junction to Fairchild Semiconductor Corporation FGD34G2_F85 Rev.C 6
7 Typical Performance Curves I CE, COLLECTOR to EMITTER CURRENT (A) Operation in this area is limited by Vce(on) or transconductance. *For Single Non Repetitive Pulse operation Tj=75 C Tc=25 C Vge=5.V Rev. 2. Pulse Operation * V CE, COLLECTOR to EMITTER VOLTAGE (V) Figure 7. Forward Safe Operating Area *Operation in this area is permitted during SCIS us us ms ms DC & ms 5 FGD34G2_F85 EcoSPARK 2 3mJ, 4V, N-Channel Ignition Fairchild Semiconductor Corporation FGD34G2_F85 Rev.C 7
8 Test Circuit and Waveforms PULSE GEN R G G Figure 8. Inductive Switching Test Circuit VARY t P TO OBTAIN REQUIRED PEAK I SCIS V t P R G Figure 2. Energy Test Circuit C DUT E G C E L V CE DUT I SCIS L.Ω V CC + V CC - 5V R G = KΩ G DUT Figure 9. t ON and t OFF Switching Test Circuit I SCIS t P Figure 2. Energy Waveforms C E R or L BV CES t AV LOAD V CE + V CC - V CC FGD34G2_F85 EcoSPARK 2 3mJ, 4V, N-Channel Ignition Fairchild Semiconductor Corporation FGD34G2_F85 Rev.C 8
9 Mechanical Dimensions.6 ±.2.8 ± ± ±.3 (.5) (4.34) (.5) MAX TYP [2.3±.2] 2.7 ± ±.3.7 ±.2 6. ±.2.76 ±. 2.3TYP [2.3±.2] D-PAK 6. ± ± ±.3.89 ±..9 ±. 6.6 ±.2 (5.34) (5.4) (.5) (2XR.25) (.7) 2.3 ±..5 ±. MIN.55.5 ±..2 ± ±.2 (.) (3.5) (.9) (.) FGD34G2_F85 EcoSPARK 2 3mJ, 4V, N-Channel Ignition IGBT.76 ±. Dimensions in Fairchild Semiconductor Corporation FGD34G2_F85 Rev.C 9
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Datasheet contains specifications on a product that is discontinued by Fairchild Semiconductor. The datasheet is for reference information only. Rev. I55
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