SOT-23 Mark: 1A. TA = 25 C unless otherwise noted. Symbol Parameter Value Units

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1 B E TO-92 MMBT394 SOT-23 Mark: A B E / MMBT394 / PZT394 PZT394 SOT-223 B E NPN General Purpose Amplifier This device is designed as a general purpose amplifier and switch. The useful dynamic range extends to ma as a switch and to MHz as an amplifier. Sourced from Process 23. Absolute Maximum Ratings* TA = 2 unless otherwise noted Symbol Parameter Value Units V EO ollector-emitter Voltage 4 V V BO ollector-base Voltage 6 V V EBO Emitter-Base Voltage 6. V I ollector urrent - ontinuous ma T J, T stg Operating and Storage Junction Temperature Range - to + *These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. NOTES: ) These ratings are based on a maximum junction temperature of degrees. 2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations. 997 Fairchild Semiconductor orporation

2 Electrical haracteristics TA = 2 unless otherwise noted NPN General Purpose Amplifier (continued) Symbol Parameter Test onditions Min Max Units OFF HARATERISTIS V (BR)EO ollector-emitter Breakdown Voltage I =. ma, I B = 4 V V (BR)BO ollector-base Breakdown Voltage I = µa, I E = 6 V V (BR)EBO Emitter-Base Breakdown Voltage I E = µa, I = 6. V I BL Base utoff urrent V E = V, V EB = na I EX ollector utoff urrent V E = V, V EB = na ON HARATERISTIS* h FE D urrent Gain I =. ma, V E =. V I =. ma, V E =. V I = ma, V E =. V I = ma, V E =. V I = ma, V E =. V V E(sat) ollector-emitter Saturation Voltage I = ma, I B =. ma I = ma, I B =. ma V BE(sat) Base-Emitter Saturation Voltage I = ma, I B =. ma I = ma, I B =. ma V V V V / MMBT394 / PZT394 SMALL SIGNAL HARATERISTIS f T urrent Gain - Bandwidth Product I = ma, V E = 2 V, f = MHz obo Output apacitance V B =. V, I E =, f =. MHz ibo Input apacitance V EB =. V, I =, f =. MHz NF Noise Figure (except MMPQ394) I = µa, V E =. V, R S =.kω, f= Hz to.7 khz MHz 4. pf 8. pf. db SWITHING HARATERISTIS (except MMPQ394) t d Delay Time V = 3. V, V BE =. V, 3 ns t r Rise Time I = ma, I B =. ma 3 ns t s Storage Time V = 3. V, I = ma ns t f Fall Time I B = I B2 =. ma ns *Pulse Test: Pulse Width µs, Duty ycle 2.% Spice Model NPN (Is=6.734f Xti=3 Eg=. Vaf=74.3 Bf=46.4 Ne=.29 Ise=6.734 Ikf=66.78m Xtb=. Br=.737 Nc=2 Isc= Ikr= Rc= jc=3.638p Mjc=.8 Vjc=.7 Fc=. je=4.493p Mje=.293 Vje=.7 Tr=239.n Tf=.2p Itf=.4 Vtf=4 Xtf=2 Rb=)

3 Thermal haracteristics TA = 2 unless otherwise noted Symbol haracteristic Max Units *PZT394 P D Total Device Dissipation Derate above 2 62., 8. mw mw/ R θj Thermal Resistance, Junction to ase 83.3 /W R θja Thermal Resistance, Junction to Ambient 2 /W Symbol haracteristic Max Units P D R θja Total Device Dissipation Derate above 2 Thermal Resistance, Junction to Ambient Effective 4 Die Each Die NPN General Purpose Amplifier (continued) **MMBT MMPQ394, mw mw/ /W /W /W / MMBT394 / PZT394 *Device mounted on FR-4 PB 36 mm X 8 mm X. mm; mounting pad for the collector lead min. 6 cm 2. **Device mounted on FR-4 PB.6" X.6" X.6." Typical haracteristics h - TYPIAL PULSED URRENT GAIN FE 4 Typical Pulsed urrent Gain vs ollector urrent. I 2-4º 2 - OLLETOR URRENT (ma) V E = V V - OLLETOR-EMITTER VOLTAGE (V) ESAT... ollector-emitter Saturation Voltage vs ollector urrent β =. I - OLLETOR URRENT (ma) V - BASE-EMITTER VOLTAGE (V) BESAT Base-Emitter Saturation Voltage vs ollector urrent β = - 4. I - OLLETOR URRENT (ma) 2 2 V - BASE-EMITTER ON VOLTAGE (V) BE(ON) Base-Emitter ON Voltage vs ollector urrent V E = V I - OLLETOR URRENT (ma) 2 2

4 Typical haracteristics (continued) I - OLLETOR URRENT (na) BO. V ollector-utoff urrent vs Ambient Temperature B = V T - AMBIENT TEMPERATURE ( ) A APAITANE (pf) NPN General Purpose Amplifier (continued) apacitance vs Reverse Bias Voltage ibo f =. MHz obo. REVERSE BIAS VOLTAGE (V) / MMBT394 / PZT394 NF - NOISE FIGURE (db) Noise Figure vs Frequency I =. ma R S = Ω I = µa R S =. kω I =. ma R S = Ω V =.V E I = µa, R = Ω S. f - FREQUENY (khz) NF - NOISE FIGURE (db) Noise Figure vs Source Resistance I =. ma I =. ma I = µa I = µa. R S - SOURE RESISTANE ( kω ) h fe - URRENT GAIN (db) urrent Gain and Phase Angle vs Frequency h fe V E = 4V I = ma f - FREQUENY (MHz) θ θ - DEGREES P - POWER DISSIPATION (W) D.7..2 TO-92 SOT-23 Power Dissipation vs Ambient Temperature SOT o TEMPERATURE ( )

5 f Typical haracteristics (continued) TIME (ns) Turn-On Time vs ollector urrent 2.V 4V V I c I B= I B2= V = 3.V r t V B = V I - OLLETOR URRENT (ma) t - RISE TIME (ns) r NPN General Purpose Amplifier (continued) Rise Time vs ollector urrent T J = 2 V = 4V T = 2 J I c I B= I B2= I - OLLETOR URRENT (ma) / MMBT394 / PZT394 t - STORAGE TIME (ns) S Storage Time vs ollector urrent T = 2 J T J = 2 I c I B= I B2= t - FALL TIME (ns) Fall Time vs ollector urrent T = 2 J T J = 2 I c I B= I B2= V = 4V I - OLLETOR URRENT (ma) I - OLLETOR URRENT (ma)

6 Test ircuits Duty ycle = 2% -. V ns <. ns.6 V NPN General Purpose Amplifier (continued) KΩ 3. V 27 Ω FIGURE : Delay and Rise Time Equivalent Test ircuit < 4. pf / MMBT394 / PZT V < t < µs t.9 V 27 Ω Duty ycle = 2% KΩ < 4. pf - 9. V <. ns N96 FIGURE 2: Storage and Fall Time Equivalent Test ircuit

7 SEMIONDUTOR TEHNIAL DATA Order this document by 2N393/D NPN Silicon *Motorola Preferred Device OLLETOR 3 2 BASE EMITTER MAXIMUM RATINGS Rating Symbol Value Unit ollector Emitter Voltage VEO 4 Vdc ollector Base Voltage VBO 6 Vdc Emitter Base Voltage VEBO 6. Vdc ollector urrent ontinuous I madc Total Device TA = 2 Derate above 2 PD 62. mw mw/ 2 3 ASE 29 4, STYLE TO 92 (TO 226AA) Total Device T = 2 Derate above 2 PD. 2 Watts mw/ Operating and Storage Junction Temperature Range THERMAL HARATERISTIS() TJ, Tstg to + haracteristic Symbol Max Unit Thermal Resistance, Junction to Ambient R JA /W Thermal Resistance, Junction to ase R J 83.3 /W ELETRIAL HARATERISTIS (TA = 2 unless otherwise noted) haracteristic Symbol Min Max Unit OFF HARATERISTIS ollector Emitter Breakdown Voltage (2) V(BR)EO 4 Vdc (I =. madc, IB = ) ollector Base Breakdown Voltage (I = Adc, IE = ) Emitter Base Breakdown Voltage (IE = Adc, I = ) Base utoff urrent (VE = Vdc, VEB = 3. Vdc) ollector utoff urrent (VE = Vdc, VEB = 3. Vdc) V(BR)BO 6 Vdc V(BR)EBO 6. Vdc IBL nadc IEX nadc. Indicates Data in addition to JEDE Requirements. 2. Pulse Test: Pulse Width s; Duty ycle 2.%. Preferred devices are Motorola recommended choices for future use and best overall value. REV 2 Motorola Small Signal Transistors, FETs and Diodes Device Data Motorola, Inc. 996

8 TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. AEx oolfet ROSSVOLT E 2 MOS TM FAT FAT Quiet Series FAST FASTr GTO HiSe ISOPLANAR MIROWIRE POP PowerTrench QS Quiet Series SuperSOT -3 SuperSOT -6 SuperSOT -8 TinyLogic DISLAIMER FAIRHILD SEMIONDUTOR RESERVES THE RIGHT TO MAKE HANGES WITHOUT FURTHER NOTIE TO ANY PRODUTS HEREIN TO IMPROVE RELIABILITY, FUNTION OR DESIGN. FAIRHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLIATION OR USE OF ANY PRODUT OR IRUIT DESRIBED HEREIN; NEITHER DOES IT ONVEY ANY LIENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. LIFE SUPPORT POLIY FAIRHILD S PRODUTS ARE NOT AUTHORIZED FOR USE AS RITIAL OMPONENTS IN LIFE SUPPORT DEVIES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRHILD SEMIONDUTOR ORPORATION. As used herein:. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in significant injury to the user. PRODUT STATUS DEFINITIONS Definition of Terms 2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. Datasheet Identification Product Status Definition Advance Information Preliminary No Identification Needed Formative or In Design First Production Full Production This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. Obsolete Not In Production This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only.

9 ELETRIAL HARATERISTIS (TA = 2 unless otherwise noted) (ontinued) haracteristic Symbol Min Max Unit ON HARATERISTIS D urrent Gain() (I =. madc, VE =. Vdc) 2N393 hfe 2 4 (I =. madc, VE =. Vdc) 2N393 3 (I = madc, VE =. Vdc) 2N393 (I = madc, VE =. Vdc) 2N393 6 (I = madc, VE =. Vdc) 2N393 ollector Emitter Saturation Voltage() (I = madc, IB =. madc) (I = madc, IB =. madc Base Emitter Saturation Voltage() (I = madc, IB =. madc) (I = madc, IB =. madc) SMALL SIGNAL HARATERISTIS urrent Gain Bandwidth Product (I = madc, VE = 2 Vdc, f = MHz) Output apacitance (VB =. Vdc, IE =, f =. MHz) Input apacitance (VEB =. Vdc, I =, f =. MHz) Input Impedance (I =. madc, VE = Vdc, f =. khz) Voltage Feedback Ratio (I =. madc, VE = Vdc, f =. khz) Small Signal urrent Gain (I =. madc, VE = Vdc, f =. khz) Output Admittance (I =. madc, VE = Vdc, f =. khz) 2N393 2N393 2N393 2N393 VE(sat) VBE(sat) ft Vdc Vdc MHz obo 4. pf ibo 8. pf hie hre hfe k Ω X 4 hoe. 4 mhos Noise Figure (I = Adc, VE =. Vdc, RS =. k Ω, f =. khz) SWITHING HARATERISTIS 2N393 Delay Time (V = 3. Vdc, VBE =. Vdc, td 3 ns Rise Time I = madc, IB =. madc) tr 3 ns Storage Time (V = 3. Vdc, I = madc, 2N393 IB = IB2 =. madc) NF ts Fall Time tf ns. Pulse Test: Pulse Width s; Duty ycle 2.% db ns 2 Motorola Small Signal Transistors, FETs and Diodes Device Data

10 DUTY YLE = 2% ns +.9 V +3 V 27 < t < s DUTY YLE = 2% t +.9 V +3 V 27. V < ns k S < 4 pf* k N96 S < 4 pf* 9. V < ns * Total shunt capacitance of test jig and connectors Figure. Delay and Rise Time Equivalent Test ircuit Figure 2. Storage and Fall Time Equivalent Test ircuit TYPIAL TRANSIENT HARATERISTIS TJ = 2 TJ = 2 APAITANE (pf) ibo obo REVERSE BIAS VOLTAGE (VOLTS) Figure 3. apacitance Q, HARGE (p). V = 4 V I/IB = QT I, OLLETOR URRENT (ma) Figure 4. harge Data QA Motorola Small Signal Transistors, FETs and Diodes Device Data 3

11 f I/IB = V = 4 V I/IB = TIME (ns) 2 V 7 VOB = V 2. V I, OLLETOR URRENT (ma) Figure. Turn On Time V = 3. V 4 V t, RISE TIME (ns) r I, OLLETOR URRENT (ma) Figure 6. Rise Time t, STORAGE TIME (ns) s 2 I/IB = 2 I/IB = t s = ts /8 tf IB = IB2 I/IB = 2 I/IB = t, FALL TIME (ns) 2 I/IB = I/IB = 2 V = 4 V IB = IB I, OLLETOR URRENT (ma) Figure 7. Storage Time I, OLLETOR URRENT (ma) Figure 8. Fall Time TYPIAL AUDIO SMALL SIGNAL HARATERISTIS NOISE FIGURE VARIATIONS (VE =. Vdc, TA = 2, Bandwidth =. Hz) NF, NOISE FIGURE (db) SOURE RESISTANE = I =. ma SOURE RESISTANE = I =. ma SOURE RESISTANE =. k I = A NF, NOISE FIGURE (db) f =. khz I =. ma I =. ma I = A I = A 2 SOURE RESISTANE = I = A f, FREQUENY (khz) Figure RS, SOURE RESISTANE (k OHMS) Figure. 4 Motorola Small Signal Transistors, FETs and Diodes Device Data

12 h PARAMETERS (VE = Vdc, f =. khz, TA = 2 ) h fe, URRENT GAIN I, OLLETOR URRENT (ma) Figure. urrent Gain h oe, OUTPUT ADMITTANE ( mhos) I, OLLETOR URRENT (ma) Figure 2. Output Admittance 2 h ie, INPUT IMPEDANE (k OHMS) h, VOLTAGE FEEDBAK RATIO (X 4 re ) I, OLLETOR URRENT (ma) I, OLLETOR URRENT (ma) Figure 3. Input Impedance Figure 4. Voltage Feedback Ratio TYPIAL STATI HARATERISTIS h FE, D URRENT GAIN (NORMALIZED) TJ = VE =. V I, OLLETOR URRENT (ma) Figure. D urrent Gain Motorola Small Signal Transistors, FETs and Diodes Device Data

13 V E, OLLETOR EMITTER VOLTAGE (VOLTS) I =. ma TJ = 2 ma ma ma IB, BASE URRENT (ma) Figure 6. ollector Saturation Region.2. TJ = 2 I/IB =.. +2 TO +2 V, VOLTAGE (VOLTS) I/IB = VE =. V OEFFIIENT (mv/ )... V FOR VE(sat) VB FOR VBE(sat) TO +2 TO TO I, OLLETOR URRENT (ma) I, OLLETOR URRENT (ma) Figure 7. ON Voltages Figure 8. Temperature oefficients 6 Motorola Small Signal Transistors, FETs and Diodes Device Data

14 PAKAGE DIMENSIONS SEATING PLANE R A X X H V N F G P N B L K D J SETION X X NOTES:. DIMENSIONING AND TOLERANING PER ANSI Y4.M, ONTROLLING DIMENSION: INH. 3. ONTOUR OF PAKAGE BEYOND DIMENSION R IS UNONTROLLED. 4. DIMENSION F APPLIES BETWEEN P AND L. DIMENSION D AND J APPLY BETWEEN L AND K MINIMUM. LEAD DIMENSION IS UNONTROLLED IN P AND BEYOND DIMENSION K MINIMUM. INHES MILLIMETERS DIM MIN MAX MIN MAX A B D F G H J K. 2. L N P. 2.4 R V ASE 29 4 (TO 226AA) ISSUE AD STYLE : PIN. EMITTER 2. BASE 3. OLLETOR Motorola Small Signal Transistors, FETs and Diodes Device Data 7

15 Motorola reserves the right to make changes without further notice to any products herein. Motorola makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation consequential or incidental damages. Typical parameters which may be provided in Motorola data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including Typicals must be validated for each customer application by customer s technical experts. Motorola does not convey any license under its patent rights nor the rights of others. Motorola products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the Motorola product could create a situation where personal injury or death may occur. Should Buyer purchase or use Motorola products for any such unintended or unauthorized application, Buyer shall indemnify and hold Motorola and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that Motorola was negligent regarding the design or manufacture of the part. Motorola and are registered trademarks of Motorola, Inc. Motorola, Inc. is an Equal Opportunity/Affirmative Action Employer. How to reach us: USA / EUROPE / Locations Not Listed: Motorola Literature Distribution; JAPAN: Nippon Motorola Ltd.; Tatsumi SPD JLD, 6F Seibu Butsuryu enter, P.O. Box 4; Denver, olorado Tatsumi Koto Ku, Tokyo 3, Japan MFAX: RMFAX@ .sps.mot.com TOUHTONE ASIA/PAIFI: Motorola Semiconductors H.K. Ltd.; 8B Tai Ping Industrial Park, INTERNET: NET.com Ting Kok Road, Tai Po, N.T., Hong Kong Motorola Small Signal Transistors, FETs and Diodes Device 2N393/D Data

NPN Silicon SEMICONDUCTOR TECHNICAL DATA MAXIMUM RATINGS THERMAL CHARACTERISTICS(1) ELECTRICAL CHARACTERISTICS (TA = 25 C unless otherwise noted)

NPN Silicon SEMICONDUCTOR TECHNICAL DATA MAXIMUM RATINGS THERMAL CHARACTERISTICS(1) ELECTRICAL CHARACTERISTICS (TA = 25 C unless otherwise noted) SEMIONDUTOR TEHNIAL DATA Order this document by 2N393/D NPN Silicon *Motorola Preferred Device OLLETOR 3 2 BASE EMITTER MAXIMUM RATINGS Rating Symbol Value Unit ollector Emitter Voltage VEO 4 Vdc ollector