TIP120, TIP121, TIP122,

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1 SEMICONDUCTOR TECHNICAL DATA Order this document by TIP120/D... designed for general purpose amplifier and low speed switching applications. High DC Current Gain hfe = 2500 IC = 4.0 Adc Collector Emitter Sustaining 100 madc VCEO(sus) = 60 Vdc (Min) TIP120, TIP125 VCEO(sus) = 80 Vdc (Min) VCEO(sus) = 100 Vdc (Min) Low Collector Emitter Saturation Voltage VCE(sat) = Vdc IC = Adc VCE(sat) = 4.0 Vdc IC = 5.0 Adc Monolithic Construction with Built In Base Emitter Shunt Resistors TO 220AB Compact Package Î *MAXIMUM RATINGS TIP120, TIP121, TIP122, Rating Symbol TIP125 TIP126ÎÎ TIP127 Unit Collector Emitter Voltage ÎÎ VCEO Vdc Collector Base Voltage VCB Vdc Emitter Base Voltage VEB Î 5.0 Vdc Collector Current Continuous IC 5.0 Adc Peak 8.0 Base Current Î IB 120 madc Total Power TC = 25 C PD Î 65 Watts Derate above 25 C 2 W/ C Î Total Power TA = 25 C PD Watts Derate above 25 C Î W/ C Unclamped Inductive Load Energy (1) E Î 50 mj Operating and Storage Junction, TJ, Tstg Î 65 to +150 C Î Temperature Range THERMAL CHARACTERISTICS Î Characteristic Symbol Max Unit Î Thermal Resistance, Junction to Case RθJC 1.92 C/W ÎÎ Thermal Resistance, Junction to Ambient ÎÎ 62.5 C/W RθJA (1) IC = 1 A, L = 100 mh, P.R.F. = 10 Hz, VCC = 20 V, RBE = 100 Ω. *Motorola Preferred Device DARLINGTON 5 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS VOLTS 65 WATTS CASE 221A 06 TO 220AB TA 4.0 TC 80 PD, POWER DISSIPATION (WATTS) TA TC T, TEMPERATURE ( C) Figure 1. Power Derating Preferred devices are Motorola recommended choices for future use and best overall value. REV 2 Motorola, Inc Motorola Bipolar Power Transistor Device Data 1

2 ELECTRICAL CHARACTERISTICS (TC = 25 C unless otherwise noted) Characteristic Symbol Min Max Unit OFF CHARACTERISTICS Collector Emitter Sustaining Voltage (1) (IC = 100 madc, IB = 0) TIP120, TIP125 ÎÎ VCEO(sus) Vdc Collector Cutoff Current ICEO madc (VCE = 30 Vdc, IB = 0) TIP120, TIP125 (VCE = 40 Vdc, IB = 0) ÎÎ (VCE = 50 Vdc, IB = 0) Collector Cutoff Current ICBO madc (VCB = 60 Vdc, IE = 0) TIP120, TIP125 (VCB = 80 Vdc, IE = 0) ÎÎ (VCB = 100 Vdc, IE = 0) Emitter Cutoff Current IEBO madc (VBE = 5.0 Vdc, IC = 0) ÎÎ ON CHARACTERISTICS (1) DC Current Gain ÎÎ hfe ÎÎ (IC = Adc, VCE = Vdc) 1000 (IC = Adc, VCE = Vdc) 1000 Collector Emitter Saturation Voltage (IC = Adc, IB = 12 madc) ÎÎ VCE(sat) Vdc ÎÎ (IC = 5.0 Adc, IB = 20 madc) ÎÎ 4.0 Base Emitter On Voltage VBE(on) 2.5 Vdc ÎÎ (IC = Adc, VCE = Vdc) DYNAMIC CHARACTERISTICS ÎÎ Small Signal Current Gain hfe 4.0 ÎÎ (IC = Adc, VCE = 4.0 Vdc, f = MHz) ÎÎ Output Capacitance Cob pf (VCB = 10 Vdc, IE = 0, f = MHz TIP125, TIP126, TIP127 TIP120, TIP121, TIP122 ÎÎ (1) Pulse Test: Pulse Width µs, Duty Cycle 2%. RB & RC VARIED TO OBTAIN DESIRED CURRENT LEVELS D1 MUST BE FAST RECOVERY TYPE, eg: 1N5825 USED ABOVE IB 100 ma MSD6100 USED BELOW IB 100 ma TUT V 2 approx R B V D k 120 V 1 approx 12 V t r, t f 10 ns DUTY CYCLE = % 25 µs V Figure 2. Switching Times Test Circuit R C V CC 30 V for t d and t r, D 1 is disconnected and V 2 = 0 For test circuit reverse all polarities. SCOPE t, TIME ( µ s) ts VCC = 30 V IC/IB = 250 IB1 = IB Figure 3. Switching Times tf VBE(off) = 0 tr 2 Motorola Bipolar Power Transistor Device Data

3 r(t), TRANSIENT THERMAL RESISTANCE (NORMALIZED) D = 0.01 SINGLE PULSE ZθJC(t) = r(t) RθJC RθJC = 1.92 C/W MAX D CURVES APPLY FOR POWER PULSE TRAIN SHOWN READ TIME AT t1 TJ(pk) TC = P(pk) ZθJC(t) k t, TIME (ms) Figure 4. Thermal Response P(pk) t1 t 2 DUTY CYCLE, D = t1/t dc TJ = 150 C BONDING WIRE LIMITED THERMALLY TC = 25 C (SINGLE PULSE) SECOND BREAKDOWN LIMITED CURVES APPLY BELOW RATED VCEO 500 µs 1 ms 5 ms TIP120, TIP VCE, COLLECTOR EMITTER VOLTAGE (VOLTS) 100 µs There are two limitations on the power handling ability of a transistor: average junction temperature and second breakdown. Safe operating area curves indicate IC VCE limits of the transistor that must be observed for reliable operation, i.e., the transistor must not be subjected to greater dissipation than the curves indicate. The data of Figure 5 is based on TJ(pk) = 150 C; TC is variable depending on conditions. Second breakdown pulse limits are valid for duty cycles to 10% provided TJ(pk) < 150 C. TJ(pk) may be calculated from the data in Figure 4. At high case temperatures, thermal limitations will reduce the power that can be handled to values less than the limitations imposed by second breakdown Figure 5. Active Region Safe Operating Area h fe, SMALL SIGNAL CURRENT GAIN 10, TC = 25 C VCE = 4.0 Vdc IC = Adc f, FREQUENCY (khz) C, CAPACITANCE (pf) Cib Cob VR, REVERSE VOLTAGE (VOLTS) Figure 6. Small Signal Current Gain Figure 7. Capacitance Motorola Bipolar Power Transistor Device Data 3

4 TIP120, TIP121, TIP122 TIP125, TIP126, TIP127 hfe, DC CURRENT GAIN 20,000 10, TJ = 150 C 25 C 55 C VCE = 4.0 V hfe, DC CURRENT GAIN 20,000 10, TJ = 150 C 25 C 55 C VCE = 4.0 V Figure 8. DC Current Gain VCE, COLLECTOR EMITTER VOLTAGE (VOLTS) IC = A 4.0 A 6.0 A IB, BASE CURRENT (ma) VCE, COLLECTOR EMITTER VOLTAGE (VOLTS) Figure 9. Collector Saturation Region IC = A 4.0 A 6.0 A IB, BASE CURRENT (ma) V, VOLTAGE (VOLTS) 1.5 IC/IB = 250 VCE = 4.0 V IC/IB = V, VOLTAGE (VOLTS) 1.5 VCE = 4.0 V IC/IB = 250 IC/IB = Figure 10. On Voltages 4 Motorola Bipolar Power Transistor Device Data

5 PACKAGE DIMENSIONS H Q Z L V G B N D A K F T U R S J C T SEATING PLANE NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, CONTROLLING DIMENSION: INCH. 3. DIMENSION Z DEFINES A ZONE WHERE ALL BODY AND LEAD IRREGULARITIES ARE ALLOWED. INCHES MILLIMETERS DIM MIN MAX MIN MAX A B C D F G H J K L N Q R S T U V Z STYLE 1: PIN 1. BASE 2. COLLECTOR 3. EMITTER 4. COLLECTOR CASE 221A 06 TO 220AB ISSUE Y Motorola Bipolar Power Transistor Device Data 5

6 Motorola reserves the right to make changes without further notice to any products herein. Motorola makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation consequential or incidental damages. Typical parameters can and do vary in different applications. All operating parameters, including Typicals must be validated for each customer application by customer s technical experts. Motorola does not convey any license under its patent rights nor the rights of others. Motorola products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the Motorola product could create a situation where personal injury or death may occur. Should Buyer purchase or use Motorola products for any such unintended or unauthorized application, Buyer shall indemnify and hold Motorola and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that Motorola was negligent regarding the design or manufacture of the part. Motorola and are registered trademarks of Motorola, Inc. Motorola, Inc. is an Equal Opportunity/Affirmative Action Employer. How to reach us: USA / EUROPE: Motorola Literature Distribution; JAPAN: Nippon Motorola Ltd.; Tatsumi SPD JLDC, Toshikatsu Otsuki, P.O. Box 20912; Phoenix, Arizona F Seibu Butsuryu Center, Tatsumi Koto Ku, Tokyo 135, Japan MFAX: RMFAX0@ .sps.mot.com TOUCHTONE (602) HONG KONG: Motorola Semiconductors H.K. Ltd.; 8B Tai Ping Industrial Park, INTERNET: NET.com 51 Ting Kok Road, Tai Po, N.T., Hong Kong Motorola Bipolar Power Transistor Device Data TIP120/D

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