2N5210/MMBT5210 B E. TA = 25 C unless otherwise noted. Symbol Parameter Value Units

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1 N5/MMBT5 This device is designed for low noise, high gain, general purpose amplifier applications at collector currents from µa to 5 ma. N5/MMBT5 BE TO-9 B E OT- Mark: M Absolute Maximum Ratings* TA = 5 unless otherwise noted ymbol Parameter Value Units V EO ollector-emitter Voltage 5 V V BO ollector-base Voltage 5 V V EBO Emitter-Base Voltage 4.5 V I ollector urrent - ontinuous ma T J, T stg Operating and torage Junction Temperature Range -55 to +5 *These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. NOTE: ) These ratings are based on a maximum junction temperature of 5 degrees. ) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations. Thermal haracteristics TA = 5 unless otherwise noted ymbol haracteristic Max. Units N5 MMBT5 P D Total Device Dissipation 65 5 mw Derate above mw/ R θj Thermal Resistance, Junction to ase 8. /W R θja Thermal Resistance, Junction to Ambient 57 /W Fairchild emiconductor orporation N5, Rev B

2 Electrical haracteristics OFF HARATERITI TA = 5 unless otherwise noted ymbol Parameter Test onditions Min Max Units V (BR)EO ollector-emitter Breakdown Voltage I =. ma, I B = 5 V V (BR)BO ollector-base Breakdown Voltage I =. ma, I E = 5 V I BO ollector utoff urrent V B = 5 V, I E = 5 na I EBO Emitter utoff urrent V EB =. V, I = 5 na N5/MMBT5 ON HARATERITI h FE D urrent Gain I = µa, V E = 5. V I =. ma, V E = 5. V I = ma, V E = 5. V* 5 5 V E(sat) ollector-emitter aturation Voltage I = ma, I B =. ma.7 V V BE(on) Base-Emitter On Voltage I =. ma, V E = 5. V 5 V 6 MALL IGNAL HARATERITI f T urrent Gain - Bandwidth Product I = 5 µa,v E = 5. V, f= MHz MHz cb ollector-base apacitance V B = 5. V, I E =, f = khz 4. pf mall-ignal urrent Gain I =. ma, V E = 5. V, f =. khz NF Noise Figure I = µa, V E = 5. V, R = kω, f = Hz to 5.7 khz I = µa, V E = 5. V, R = kω, f =. khz *Pulse Test: Pulse Width µs, Duty ycle.%

3 Typical haracteristics h FE - TYPIAL PULED URRENT GAIN Typical Pulsed urrent Gain vs ollector urrent 5 o 5 o - 4 o.... I - OLLETOR URRENT (ma) V E = 5.V V BEON - BAE-EMITTER ON VOLTAGE (V) ollector-emitter aturation Voltage vs ollector urrent β = 5 o 5 o. I - OLLETOR URRENT (ma) - 4 o N5/MMBT5 V BEAT - OLLETOR-EMITTER VOLTAGE (V) Base-Emitter aturation Voltage vs ollector urrent - 4 o 5 o 5 o. I - OLLETOR URRENT (ma) β = V BEON - BAE-EMITTER ON VOLTAGE (V) Base-Emitter ON Voltage vs ollector urrent - 4 o 5 o 5 o. I - OLLETOR URRENT (ma) V E = 5.V I - OLLETOR URRENT (na) BO ollector-utoff urrent vs Ambient Temperature V = 45V B T A- AMBIENT TEMPERATURE ( )

4 Typical haracteristics APAITANE (pf) 5 4 te Input and Output apacitance vs Reverse Bias Voltage f =. MHz ob REVERE BIA VOLTAGE (V) V - OLLETOR VOLTAGE (V) E 7 5 ontours of onstant Gain Bandwidth Product (f T ). I - OLLETOR URRENT (ma) 75 MHz 5 MHz 5 MHz MHz 75 MHz N5/MMBT5 HARATERITI RELATIVE TO VALUE AT T = 5 A Normalized ollector-utoff urrent vs Ambient Temperature T A - AMBIENT TEMPERATURE ( ) NF - NOIE FIGURE () 5 4 Wideband Noise Frequency vs ource Resistance V E = 5. V BANDWIDTH = 5.7 khz I = µa I = µa I = µa,, 5,,, 5,, R - OURE REITANE ( Ω ) NF - NOIE FIGURE () Noise Figure vs Frequency I = µa, R = kω I = µa, R = kω I =. ma, R = 5 Ω I =. ma, R = 5. kω V = 5.V E.... f - FREQUENY (MHz) P D - POWER DIIPATION (W) Base-Emitter aturation Voltage vs ollector urrent TO-9 OT TEMPERATURE ( o )

5 Typical haracteristics R - OURE REITANE ( Ω ), 5,,, ontours of onstant 5 V E = 5. V f = Hz BANDWIDTH = Hz , I - OLLETOR URRENT ( µ A) R - OURE REITANE ( Ω ), 5,,, ontours of onstant 5 V E = 5. V f =. khz BANDWIDTH = Hz , I - OLLETOR URRENT ( µ A) N5/MMBT5 R - OURE REITANE ( Ω ) 5 ontours of onstant V E = 5.V f = khz BANDWIDTH =.khz I - OLLETOR URRENT ( µ A) R - OURE REITANE ( Ω ) 5 ontours of onstant V E = 5.V f =. MHz BANDWIDTH = khz.. I - OLLETOR URRENT ( µ A)

6 Typical ommon Emitter haracteristics (f =. khz) HARATERITI RELATIVE TO VALUE(V =5V) E Typical ommon Emitter haracteristics.4... h ie I =.ma.9 f =.khz T A = V - OLLETOR VOLTAGE (V) E h ie HARATE RI TI RE LATIV E TO VALUE (T =5 ) A Typical ommon Emitter haracteristics V E = 5.V f =.khz I =.ma h ie T J - JUNTION TEMPERATURE ( ) h ie N5/MMBT5 HARATERITI RELATIVE TO VALUE(I =ma) Typical ommon Emitter haracteristics. f =.khz h ie and h ie I - OLLETOR URRENT (ma)

7 TRADEMARK The following are registered and unregistered trademarks Fairchild emiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. AEx Bottomless oolfet ROVOLT DenseTrench DOME EcoPARK E MO TM Enigna TM FAT FAT Quiet eries TAR*POWER is used under license DILAIMER FAIRHILD EMIONDUTOR REERVE THE RIGHT TO MAKE HANGE WITHOUT FURTHER NOTIE TO ANY PRODUT HEREIN TO IMPROVE RELIABILITY, FUNTION OR DEIGN. FAIRHILD DOE NOT AUME ANY LIABILITY ARIING OUT OF THE APPLIATION OR UE OF ANY PRODUT OR IRUIT DERIBED HEREIN; NEITHER DOE IT ONVEY ANY LIENE UNDER IT PATENT RIGHT, NOR THE RIGHT OF OTHER. LIFE UPPORT POLIY FAIRHILD PRODUT ARE NOT AUTHORIZED FOR UE A RITIAL OMPONENT IN LIFE UPPORT DEVIE OR YTEM WITHOUT THE EXPRE WRITTEN APPROVAL OF FAIRHILD EMIONDUTOR ORPORATION. As used herein:. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in significant injury to the user. PRODUT TATU DEFINITION Definition of Terms FAT FATr FRFET GlobalOptoisolator GTO Hie IOPLANAR LittleFET MicroFET MicroPak MIROWIRE OPTOLOGI OPTOPLANAR PAMAN POP Power47 PowerTrench QFET Q QT Optoelectronics Quiet eries ILENT WITHER MART TART TAR*POWER tealth uperot - uperot -6 uperot -8 yncfet TinyLogic TruTranslation UH UltraFET. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. Datasheet Identification Product tatus Definition VX Advance Information Preliminary No Identification Needed Formative or In Design First Production Full Production This datasheet contains the design specifications for product development. pecifications may change in any manner without notice. This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild emiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains final specifications. Fairchild emiconductor reserves the right to make changes at any time without notice in order to improve design. Obsolete Not In Production This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. Rev. H4

TA = 25 C unless otherwise noted. Symbol Parameter Value Units. V V V CBO Collector-Base Voltage 2N5088 2N5089

TA = 25 C unless otherwise noted. Symbol Parameter Value Units. V V V CBO Collector-Base Voltage 2N5088 2N5089 B E N588 N589 TO-9 This device is designed for low noise, high gain, general purpose amplifier applications at collector currents from µa to 5 ma. MMBT588 MMBT589 OT- Mark: Q / R B E Absolute Maximum Ratings*