TA = 25 C unless otherwise noted. Symbol Parameter Value Units. V V V CBO Collector-Base Voltage 2N5088 2N5089
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1 B E N588 N589 TO-9 This device is designed for low noise, high gain, general purpose amplifier applications at collector currents from µa to 5 ma. MMBT588 MMBT589 OT- Mark: Q / R B E Absolute Maximum Ratings* TA = 5 unless otherwise noted ymbol Parameter alue Units EO ollector-emitter oltage N588 N589 5 BO ollector-base oltage N588 N589 5 EBO Emitter-Base oltage 4.5 I ollector urrent - ontinuous ma T J, T stg Operating and torage Junction Temperature Range -55 to +5 *These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. NOTE: ) These ratings are based on a maximum junction temperature of 5 degrees. ) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations. Thermal haracteristics TA = 5 unless otherwise noted ymbol haracteristic Max Units N588 N589 *MMBT588 *MMBT589 P D Total Device Dissipation Derate above mw mw/ R θj Thermal Resistance, Junction to ase 8. /W R θja Thermal Resistance, Junction to Ambient 57 /W *Device mounted on FR-4 PB.6" X.6" X.6." Fairchild emiconductor orporation N588/N589/MMBT588/MMBT589, Rev A
2 Electrical haracteristics OFF HARATERITI TA = 5 unless otherwise noted ymbol Parameter Test onditions Min Max Units (BR)EO ollector-emitter Breakdown oltage* I =. ma, IB = (BR)BO ollector-base Breakdown oltage I = µa, IE = IBO ollector utoff urrent B =, IE = 588 B = 5, I E = 589 I EBO Emitter utoff urrent EB =., I = EB = 4.5, I = ON HARATERITI hfe D urrent Gain I = µa, E = I =. ma, E = I = ma, E = 5. * E(sat) ollector-emitter aturation oltage I = ma, IB =. ma.5 BE(on) Base-Emitter On oltage I = ma, E = MALL IGNAL HARATERITI f T urrent Gain - Bandwidth Product I = 5 µa, E = 5. ma, f = MHz 5 MHz cb ollector-base apacitance B = 5., I E =, f = khz 4. pf eb Emitter-Base apacitance BE =.5, I =, f = khz pf mall-ignal urrent Gain I =. ma, E = 5., 588 f =. khz 589 NF Noise Figure I = µa, E = 5., 588 R = kω, 589 f = Hz to 5.7 khz *Pulse Test: Pulse Width µs, Duty ycle.% pice Model NPN (Is=5.9f Xti= Eg=. af=6.7 Bf=.K Ne=.94 Ise=5.9f Ikf=4.9m Xtb=.5 Br=.7 Nc= Isc= Ikr= Rc=.6 jc=4.7p Mjc=.74 jc=.75 Fc=.5 je=4.97p Mje=.446 je=.75 Tr=4.67n Tf=8.7p Itf=.5 tf=4 Xtf=7 Rb=)
3 Typical haracteristics h - TYPIAL PULED URRENT GAIN FE - OLLETOR-EMITTER OLTAGE () BEAT Typical Pulsed urrent Gain vs ollector urrent.... I - OLLETOR URRENT (ma) Base-Emitter aturation oltage vs ollector urrent. I - OLLETOR URRENT (ma) E = 5. β = - OLLETOR-EMITTER OLTAGE () EAT - BAE-EMITTER ON OLTAGE () BEON ollector-emitter aturation oltage vs ollector urrent β =. I - OLLETOR URRENT (ma) Base-Emitter ON oltage vs ollector urrent. 4 I - OLLETOR URRENT (ma) E = 5. I - OLLETOR URRENT () BO ollector-utoff urrent vs Ambient Temperature = 45 B T A- AMBIENT TEMPERATURE ( )
4 HARATERITI RELATIE TO ALUE AT T = 5 Typical haracteristics APAITANE (pf) A 5 4 te Input and Output apacitance vs Reverse Bias oltage f =. MHz ob REERE BIA OLTAGE () Normalized ollector-utoff urrent vs Ambient Temperature T A - AMBIENT TEMPERATURE ( ) - OLLETOR OLTAGE () E NF - NOIE FIGURE () ontours of onstant Gain Bandwidth Product (f T ). I - OLLETOR URRENT (ma) Wideband Noise Frequency vs ource Resistance E = MHz 5 MHz 5 MHz MHz 75 MHz BANDWIDTH = 5.7 khz I = µa I = µa I = µa,, 5,,, 5,, R - OURE REITANE ( Ω ) NF - NOIE FIGURE () Noise Figure vs Frequency I = µa, R = kω I = µa, R = kω I =. ma, R = 5 Ω I =. ma, R = 5. kω = 5. E.... f - FREQUENY (MHz) P - POWER DIIPATION (mw) D OT- Power Dissipation vs Ambient Temperature TO o TEMPERATURE ( )
5 Typical haracteristics R - OURE REITANE ( Ω ) R - OURE REITANE ( Ω ), 5,,, ontours of onstant 5 E = 5. f = Hz BANDWIDTH = Hz , I - OLLETOR URRENT ( µ A) 5 ontours of onstant E = 5. f = khz BANDWIDTH =.khz I - OLLETOR URRENT ( µ A) R - OURE REITANE ( Ω ) R - OURE REITANE ( Ω ), 5,,, ontours of onstant 5 E = 5. f =. khz BANDWIDTH = Hz , I - OLLETOR URRENT ( µ A) 5 ontours of onstant E = 5. f =. MHz BANDWIDTH = khz.. I - OLLETOR URRENT ( µ A)
6 Typical ommon Emitter haracteristics (f =. khz) HARATERITI RELATIE TO ALUE( =5) E Typical ommon Emitter haracteristics.4... h ie I =.ma.9 f =.khz T A = OLLETOR OLTAGE () E HARATERITI RELATIE TO ALUE(I =ma) Typical ommon Emitter haracteristics. f =.khz h ie and I - OLLETOR URRENT (ma) h ie HARATERITI RELATIE TO ALUE(T =5 ) A h ie Typical ommon Emitter haracteristics E = 5. f =.khz I =.ma h ie T J - JUNTION TEMPERATURE ( ) h ie
7 TRADEMARK The following are registered and unregistered trademarks Fairchild emiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. AEx Bottomless oolfet ROOLT DOME E MO TM Enigna TM FAT FAT Quiet eries FAT DILAIMER LIFE UPPORT POLIY FAIRHILD PRODUT ARE NOT AUTHORIZED FOR UE A RITIAL OMPONENT IN LIFE UPPORT DEIE OR YTEM WITHOUT THE EXPRE WRITTEN APPROAL OF FAIRHILD EMIONDUTOR ORPORATION. As used herein:. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in significant injury to the user. PRODUT TATU DEFINITION Definition of Terms FATr GlobalOptoisolator GTO Hie IOPLANAR MIROWIRE OPTOLOGI OPTOPLANAR PAMAN POP PowerTrench QFET Q QT Optoelectronics Quiet eries ILENT WITHER MART TART uperot - uperot -6 uperot -8 yncfet TinyLogic UH X FAIRHILD EMIONDUTOR REERE THE RIGHT TO MAKE HANGE WITHOUT FURTHER NOTIE TO ANY PRODUT HEREIN TO IMPROE RELIABILITY, FUNTION OR DEIGN. FAIRHILD DOE NOT AUME ANY LIABILITY ARIING OUT OF THE APPLIATION OR UE OF ANY PRODUT OR IRUIT DERIBED HEREIN; NEITHER DOE IT ONEY ANY LIENE UNDER IT PATENT RIGHT, NOR THE RIGHT OF OTHER.. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. Datasheet Identification Product tatus Definition Advance Information Preliminary No Identification Needed Formative or In Design First Production Full Production This datasheet contains the design specifications for product development. pecifications may change in any manner without notice. This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild emiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains final specifications. Fairchild emiconductor reserves the right to make changes at any time without notice in order to improve design. Obsolete Not In Production This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. Rev. G
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