SOT-23 Mark: 1S. TA = 25 C unless otherwise noted. Symbol Parameter Value Units

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Jonas Carroll
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C B E PN2369A TO-92 MMBT2369A C SOT-23 Mark: S B E Discrete POWER & Signal Technologies MMPQ2369 E B E B E B E B SOIC-6 C C C C C C C C This device is designed for high speed saturation switching at

Absolute Maximum Ratings* TA = 25 C unless otherwise noted Symbol Parameter alue Units CEO Collector-Emitter oltage 5 CBO Collector-Base oltage 4 EBO Emitter-Base oltage 4.

1 C B E PN2369A TO-92 MMBT2369A C SOT-23 Mark: S B E Discrete POWER & Signal Technologies MMPQ2369 E B E B E B E B SOIC-6 C C C C C C C C This device is designed for high speed saturation switching at collector currents of ma to ma. Sourced from Process 2. Absolute Maximum Ratings* TA = 25 C unless otherwise noted Symbol Parameter alue Units CEO Collector-Emitter oltage 5 CBO Collector-Base oltage 4 EBO Emitter-Base oltage 4.5 I C Collector Current - Continuous 2 ma T J, T stg Operating and Storage Junction Temperature Range -55 to +5 C *These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. NOTES: ) These ratings are based on a maximum junction temperature of 5 degrees C. 2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations. Thermal Characteristics TA = 25 C unless otherwise noted Symbol Characteristic Max Units PN2369A MMBT2369A* MMPQ2369 P D Total Device Dissipation Derate above 25 C , 8. mw mw/ C RθJC Thermal Resistance, Junction to Case /W R θja Thermal Resistance, Junction to Ambient Effective 4 Die Each Die *Device mounted on FR-4 PCB.6" X.6" X.6." C/W C/W C/W 997 Fairchild Semiconductor Corporation

2 Electrical Characteristics OFF CHARACTERISTICS TA = 25 C unless otherwise noted (BR)CEO Collector-Emitter Breakdown oltage* I C = ma, I B = 5 (BR)CES Collector-Emitter Breakdown oltage I C = µa, BE = 4 (BR)CBO Collector-Base Breakdown oltage I C = µa, I E = 4 (BR)EBO Emitter-Base Breakdown oltage I E = µa, I C = 4.5 I CBO Collector Cutoff Current CB = 2, I E = CB = 2, I E =, T A = 25 C ON CHARACTERISTICS h FE DC Current Gain* I C = ma, CE =. I C = ma, CE =.35,T A = -55 C I C = ma, CE = 2. CE(sat) Collector-Emitter Saturation oltage* I C = ma, I B =. ma I C = ma, I B =. ma,t A = 25 C I C = 3 ma, I B = 3. ma I C = ma, I B = ma BE(sat) Base-Emitter Saturation oltage I C = ma, I B =. ma I C = ma, I B =. ma,t A = -55 C I C = ma, I B =. ma,t A = 25 C I C = 3 ma, I B = 3. ma I C = ma, I B = ma Symbol Parameter Test Conditions Min Max Units µa µa SMALL SIGNAL CHARACTERISTICS C obo Output Capacitance CB = 5., I E =, f =. MHz 4. pf C ibo Input Capacitance EB =.5, I C =, f =. MHz 5. pf h fe Small-Signal Current Gain I C = ma, CE =, R G = 2. kω, f = MHz 5. SWITCHING CHARACTERISTICS (except MMPQ2369) t s Storage Time I B = I B2 = I C = ma 3 ns t on Turn-On Time CC = 3., I C = ma, 2 ns I B = 3. ma t off Turn-Off Time CC = 3., I C = ma, 8 ns I B = 3. ma, I B2 =.5 ma *Pulse Test: Pulse Width 3 µs, Duty Cycle 2.% Spice Model NPN (Is=44.4f Xti=3 Eg=. af= Bf=78.32 Ne=.389 Ise=9.95f Ikf=.3498 Xtb=.5 Br=2.69m Nc=2 Isc= Ikr= Rc=.6 Cjc=2.83p Mjc=86.9m jc=.75 Fc=.5 Cje=4.5p Mje=.248 je=.75 Tr=.73u Tf=227.6p Itf=.3 tf=4 Xtf=4 Rb=)

3 DC Typical Characteristics h - DC CURRENT GAIN FE CE = DC Current Gain vs Collector Current - 4 ºC.. - COLLECTOR-EMITTER OLTAGE () CESAT Collector-Emitter Saturation oltage vs Collector Current β = - 4 ºC. 5 - BASE-EMITTER OLTAGE () BESAT Base-Emitter Saturation oltage vs Collector Current β = - 4 ºC. 3 - BASE-EMITTER ON OLTAGE () BE(ON) Base-Emitter ON oltage vs Collector Current - 4 ºC CE =.2. I - COLLECTOR CURRENT (na) CBO 6 Collector-Cutoff Current vs Ambient Temperature CB = T A - AMBIENT TEMPERATURE ( º C)

4 AC Typical Characteristics Output Capacitances vs. Reverse Bias oltage Switching Times vs. Collector Current Switching Times vs. Ambient Temperature Storage Time vs. Turn On Storage Time vs. Turn On Storage Time vs. Turn On

5 AC Typical Characteristics Fall Time vs. Turn On Fall Time vs. Turn On Fall Time vs. Turn On Delay Time vs. Base-Emitter OFF oltage and Turn On Base Current Rise Time vs. Turn On Base Current and Collector Current

6 AC Typical Characteristics P - POWER DISSIPATION (W) D POWER DISSIPATION vs AMBIENT TEMPERATURE TO-92 SOT-23 SOT o TEMPERATURE ( C) Test Circuits - Pulse generator IN Rise Time < ns Source Impedance = 5Ω PW 3 ns Duty Cycle < 2% IN IN. µf 56 Ω.23µF 'A' 5 Ω 5 Ω 89 Ω + + µf µf. µf KΩ 9 Ω.23µF +6-4 OUT t s % Pulse waveform at point ' A' % OUT FIGURE : Charge Storage Time Measurement Circuit IN t on ton Pulse generator IN Rise Time < ns Source Impedance = 5Ω PW 3 ns Duty Cycle < 2% % OUT 9% BB = - 3. IN = IN 22 Ω 3.3 KΩ 5 Ω 3.3 KΩ.23µF.5 µf.5 µf BB. µf. µf OUT 5 Ω.23µF CC = 3. IN OUT t off % 9% t off BB = 2 IN = To sampling oscilloscope input impedance = 5Ω Rise Time ns FIGURE 2: t ON, t OFF Measurement Circuit

TO-92 SOT-23 Mark: 2A. TA = 25 C unless otherwise noted. Symbol Parameter Value Units

TO-92 SOT-23 Mark: 2A. TA = 25 C unless otherwise noted. Symbol Parameter Value Units 2N396 / MMBT396 / MMPQ396 / PZT396 N Discrete POWER & Signal Technologies 2N396 MMBT396 E B E TO-92 SOT-23 Mark: 2A B MMPQ396 PZT396 E B E B E B E B SOI-6 SOT-223 B E This device is designed for general