WPT2N32 WPT2N32. Descriptions. Features. Applications. Order information. Http//:

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1 Single, PNP, -30V, -A, Power Transistor with 20V N-MOSFET Http//: Descriptions The is PNP bipolar power transistor with 20V N-MOSFET. This device is suitable for use in charging circuit and other power management. Standard Product is Pb-free. DFN2x2-6L E C C 6 Features Ultra low collector-to-emitter saturation voltage High DC current gain >0 A continue collector current Small package DFN2x2-6L 2 B G 5 D 3 D S 4 Pin configuration (Top view) N32 YYWW 2 3 Applications Charging circuit 2N32 YY WW = Device code = Year = Week Marking Other power management in portable equipments Order information Device Package Shipping -6/TR DFN2x2-6L 3000/Reel&Tape Will Semiconductor Ltd. Jul, Rev..0

2 Absolute maximum ratings Parameter Symbol Value Unit PNP Transistor Collector-emitter voltage V CEO -30 V Collector-base voltage V CBO -30 V Emitter-base voltage V EBO -6 V Continues collector current b - A Pulse collector current c M -3 A N-MOSFET Drain-Source Voltage V DS 20 V Gate-Source Voltage ±6 V Continuous Drain Current a I D 0.80 A Continuous Drain Current b 0.69 A Pulsed Drain Current c I DM.4 A Power Dissipation and temperature Power dissipation a P D. W Power dissipation b 0.6 W Junction Temperature T J 50 C Lead Temperature T L 260 C Operation Temperature T A -40 ~ 85 C Storage Temperature Range T stg -55 to 50 C Thermal resistance ratings Parameter Symbol Value Unit Junction-to-Ambient Thermal Resistance a R θja 3 C/W Junction-to-Ambient Thermal Resistance b R θja 208 C/W a b c d Surface mounted on FR-4 Board using square inch pad size, oz copper Surface mounted on FR-4 board using minimum pad size, oz copper Pulse width=300µs, Duty Cycle<2% Maximum junction temperature T J =50 C. Will Semiconductor Ltd. 2 Jul, Rev..0

3 Electronics Characteristics (Ta=25 o C, unless otherwise noted) Parameter Symbol Test Conditions Min. Typ. Max. Unit PNP Transistor Collector-emitter breakdown voltage BV CEO =-ma, I B =0mA -32 V Collector-base breakdown voltage BV CBO =-ma, I E =0mA -32 V Emitter-base breakdown voltage BV EBO I E =-0uA, =0mA -6 V Collector cutoff current BO V CB =-30V,I E =0-0 na Emitter cutoff current I EBO V EB =-5V, =0-0 na Collector-emitter saturation voltage V CE(sat) =-A, I B =-50mA V Base-emitter saturation voltage V BE(sat) =-A, I B =-50mA V Base-emitter forward voltage V BE(on) =-A, V CE =-2V V DC current gain h FE =-A,V CE =-2V N-MOSFET Drain-Source Breakdown Voltage V( BR ) DSS =0V, I D =250uA 20 V Zero Gate Voltage Drain Current I DSS V DS =6V, =0V 0 na Gate Source leakage current I GSS V DS =0V, =±5V ± ua Gate Threshold Voltage (th) V DS =, I D =250uA V =4.5V, I D =5A mω Drain-Source On-Resistance R DS(on) =2.5V, I D =0A mω =.8V, I D =0.35A mω Input Capacitance Ciss V DS =V, 6 pf Output Capacitance Coss =0V, 7 pf Reverse Transfer Capacitance Crss F=0KHZ pf Total Gate Charge Q G(TOT).5 nc V DS =V, Threshold gate charge Q G(TH) 6 nc =4.5V, Gate-Source Charge Q GS 5 nc I D =0.6A Gate-Drain Charge Q GD 0.23 nc Turn-On Delay Time td(on) 33 ns V DD =V, =4.5V, Turn-On Rise Time tr 2 ns I D =A, Turn-Off Delay Time td(off) 790 ns R L =Ω, R G =6Ω Turn-Off Fall Time tf 439 ns Body Diode Forward Voltage V SD =0V, I S =0.35A 0.7. V Will Semiconductor Ltd. 3 Jul, Rev..0

4 Typical Characteristics (Ta=25 o C, unless otherwise noted) PNP Transistor h FE -DC Current Gain mA Output characteristics -40mA -30mA -20mA -ma -5mA V CE -Collector to Emitter Voltage(V) Ta=85 O C Ta=-45 O C Ta=25 O C 5 E-3 DC current gain V CE(sat) -Collector Saturation Voltage(V) V CE =-2V Ta=85 O C E Transfer characteristics Ta=25 O C Ta=-45 O C V BE -Base to Emitter Voltage(V) Ta=85 O C Ta=-45 O C Ta=25 O C E-3 C-E saturation voltage vs. Collector current % of Rated Power or I PP Ambient Temperature( O C) Power Derating COLLECTOR CURRENT: (A).0 0 s ms ms 0 ms s DC SINGLE PULSE T a = 25 C.0 0 COLLECTOR TO EMITTER VOLTAGE: V CE (V) Safe operating area Will Semiconductor Ltd. 4 Jul, Rev..0 thja

5 I DS -Drain to Source Current(A) R DS(ON) -On Resistance(m ) N-MOSFET =4.5V =3.5V =2.5V =2.0V =.5V V DS -Drain to Source Voltage(V) Output Characteristics =.8V =2.5V =4.5V I DS -Drain to Source Current(A) ON Resistance vs. Drain Current I DS -Drain Source Current(A) R DS(ON) -On Resistance(m ) T=-50 O C T=25 O C T=25 O C Gate to Source Voltage(V) Transfer Characteristics I D =5A Gate to Source Voltage(V) ON Resistance vs. Gate-to-Source Voltage R DS(ON) -On Resistance(m ) =4.5V,I D =5A Temperature( O C) ON Resistance vs. Junction Temperature (TH) -Gate Threshold Voltage(V) Temperature( O C) I D =250uA Threshold Voltage vs. Temperature Will Semiconductor Ltd. 5 Jul, Rev..0

6 C - Capacitance (pf) 80 V 70 GS =0V,F=0KHZ 60 Ciss Coss Crss VDS-Drain to Source Voltage(V) Capacitance I SD -Source to Drain Current(A) 0.8 T=50 O C T=25 O C V SD -Source to Drain Voltage(V) Body Diode Characteristics I D - Drain Current (A) Limited by R DS(on) ms 0 ms s s DC T A = 25 C Single Pulse 0 0 V DS - Drain-to-Source Voltage (V) Safe Operation Area 2 Normalized Transient Thermal Impedance Z thja Duty = Single Pulse Square Wave Pulse Duration (s) Transient thermal response (Junction-to-Ambient) P CM t t 2 t. Duty Cycle, D = t 2 2. R thja = 3 C/W 3. T JM - T A = P CM x ZthJA x RthJA 4. Surface Mounted Will Semiconductor Ltd. 6 Jul, Rev..0

7 Package outline dimensions DFN2x2-6L Symbol Dimension in Millimeters Min. Typ. Max. A A A REF D E E D k 0.200MIN b e 0.650TYP L Will Semiconductor Ltd. 7 Jul, Rev..0