KS3304DA. Single P-Channel Advanced Power MOSFET. Applications. Absolute Maximum Ratings
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1 Single P-Channel Advanced Power MOSFET Features -3V/-A, R DS (ON) =mω(typ.)@v GS =-V R DS (ON) =7.2mΩ(Typ.)@V GS =-4.V Low R DS (ON) Super High Dense Cell Design Reliable and Rugged G Pin Description D Applications Power Switching Appliaction Load Switching S G TO-22 D Absolute Maximum Ratings S Single P-Channel MOSFET Symbol Parameter Rating Unit Common Ratings (T C =2 C Unless Otherwise Noted) V DSS Drain-Source Voltage -3 V GSS Gate-Source Voltage ±2 V T J Maximum Junction Temperature 7 C T STG Storage Temperature Range - to 7 C I S Diode Continuous Forward Current T C =2 C - A Mounted on Large Heat Sink I DP 3μs Pulse Drain Current Tested T C =2 C -46 A 2 I D Continuous Drain Current(V GS =-V) T C =2 C - C T C = C -8 A P D Maximum Power Dissipation T C =2 C T C = C W R θjc Thermal Resistance-Junction to Case. C/W 3 R θja Thermal Resistance-Junction to Ambient C/W Drain-Source Avalanche Ratings 4 E AS Avalanche Energy, Single Pulsed 9 mj Rev. A NOV., 28
2 Electrical Characteristics (T C =2 C Unless Otherwise Noted) Symbol Parameter Test Condition KS334DA Min. Typ. Max. Unit Static Characteristics BV DSS Drain-Source Breakdown Voltage V GS =V, I DS =-2µA -3 V I DSS V DS =-3V, V GS =V - Zero Gate Voltage Drain Current µa T J =2 C -3 V GS(th) Gate Threshold Voltage V DS =V GS, I DS =-2µA V I GSS Gate Leakage Current V GS =±2V, V DS =V ± na R DS(ON) V GS =-V, I DS =-3A 7 mω Drain-Source On-state Resistance VGS =-4.V, I DS =-2A 7.2 mω Diode Characteristics V SD Diode Forward Voltage I SD =-2A, V GS =V V trr Reverse Recovery Time 34 ns ISD=-2A, dlsd/dt=-a/µs Qrr Reverse Recovery Charge 79 nc Dynamic Characteristics 6 R G Gate Resistance V GS =V,V DS =V,F=MHz Ω C iss Input Capacitance V GS =V, 49 C oss Output Capacitance V DS =-V, Frequency=.MHz 72 pf C rss Reverse Transfer Capacitance 46 t d(on) Turn-on Delay Time 3 t r Turn-on Rise Time V DD =-V, I DS =-3A, 2 t d(off) Turn-off Delay Time V GEN =-V,R G =3Ω 6 ns t f Turn-off Fall Time 33 Gate Charge Characteristics 6 Q g Total Gate Charge 89 Q gs Gate-Source Charge V DS =-V, V GS =-V, I DS=-2A Q gd Gate-Drain Charge 9 nc Notes: Pulse width limited by safe operating area. 2Calculated continuous current based on maximum allowable junction temperature. The package limitation current is -6A. 3When mounted on inch square copper board, t sec. The value in any given application depends on the user's specific board design. 4Limited by T Jmax, I AS =-A, L=.mH, V DD = -24V, R G = 2Ω, Starting TJ = 2 C. Pulse test;pulse width 3µs, duty cycle 2%. 6Guaranteed by design, not subject to production testing. Rev. A NOV.,
3 Ordering and Marking Information Device Package Packaging Quantity Reel Size Tape width KS334DA TO-22 Tape&Reel 2 3 6mm KS 334 YWWXXX Y WW XXX =Year,27-A,28-B,etc. =Week. =Lot number. Rev. A NOV.,
4 Typical Characteristics 2 Power Dissipation 4 Drain Current 2 P D -Power (W) I D -Drain Current (A) Limited by Package VGS=-V T J - Junction Temperature ( C) T J - Junction Temperature ( C) -I D - Drain Current (A) R DS(ON) limited R DS Safe Operation Area µs µs ms DC ms T C =2 C. -V DS - Drain-Source Voltage (V) R DS(ON) - On - Resistance (mω) 2 2 Drain Current Ids=-3A V GS - Gate-Source Voltage (V) ZthJC - Thermal Response ( C/W) Thermal Transient Impedance Duty=.,.2,.,.,.2,., Single Pulse. Single Pulse R θjc =. C/W. E-.... Square Wave Pulse Duration (sec) Rev. A NOV.,
5 Typical Characteristics Output Characteristics -I D -Drain Current (A) Normalized On Resistance V -6V -8V -4.V -4V -3V R DS(ON) -On Resistance (mω) 2 2 Drain-Source On Resistance -4.V -V -V DS - Drain-Source Voltage (V) -I D - Drain Current (A) V GS =-V I DS =-2A Drain-Source On Resistance -I S - Source Current (A) Source-Drain Diode Forward T J = C T J =2 C. T J =2 C Rds(on)=mΩ T J - Junction Temperature ( C). -V SD - Source-Drain Voltage (V) C - Capacitance (pf) Capacitance Frequency=.MHz Ciss Coss Crss -V DS - Drain-Source Voltage (V) -V GS - Gate-Source Voltage (V) VDS=-V IDS=-3A Gate Charge Q G - Gate Charge (nc) Rev. A NOV., 28
6 Package Information TO-22 θ θ θ θ θ2 SYMBOL MM INCH MIN NOM MAX MIN NOM MAX A A * *. * *.4 b b c D D E 6..3 REF REF E e H REF REF L L L REF. BSC.8 REF.2 BSC L L θ * 8 * 8 θ θ Rev. A NOV.,
7 Avalanche Test Circuit and Waveforms Switching Time Test Circuit and Waveforms Diode Recovery Test Circuit and Waveforms Gate Charge Test Circuit and Waveform Customer Service Kwansemi Semiconductor Co.,Ltd Web: DISCLAIMER: Kwansemi reserves the right to change the specifications and circuitry itr without t notice at any time.the Products are not designed for use in hostile environments, including, without limitation, aircraft, nuclear power generation, medical appliances, and devices or systems in which malfunction of any Product can reasonably be expected to result in a personal injury. Seller s customers using or selling Seller s products for use in such applications do so at their own risk and agree to fully defend and indemnify Seller. Rev. A NOV.,
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DESCRIPTION The uses advanced trench technology to provide excellent R DS(ON), low gate charge and operation with gate voltages as low as 4.5V. This device is suitable for use as a load switch or in PWM
More informationFeatures. Symbol Parameter Rating Units V DS Drain-Source Voltage 650 V V GS Gate-Source Voltage ±30 V
General Description These N-Channel enhancement mode power field effect transistors are using Super Junction technology. This advanced technology has been especially tailored to minimize on-state resistance,
More informationHCI70R500E 700V N-Channel Super Junction MOSFET
HCI70R500E 700V N-Channel Super Junction MOSFET Features Very Low FOM (R DS(on) X Q g ) Extremely low switching loss Excellent stability and uniformity 100% Avalanche Tested Higher dv/dt ruggedness Application
More informationUNISONIC TECHNOLOGIES CO., LTD UT4413
UNISONIC TECHNOLOGIES CO., LTD UT4413 P-CHANNEL ENHANCEMENT MODE DESCRIPTION The UT4413 uses advanced trench technology to provide excellent R DS(ON), low gate charge and operation with low gate voltages.
More informationHCD80R1K4E 800V N-Channel Super Junction MOSFET
HCD80R1K4E 800V N-Channel Super Junction MOSFET Features Very Low FOM (R DS(on) X Q g ) Extremely low switching loss Excellent stability and uniformity 100% Avalanche Tested Application Switch Mode Power
More informationUNISONIC TECHNOLOGIES CO., LTD
UNISONIC TECHNOLOGIES CO., LTD 60 Amps, 60 Volts N-CHANNEL POWER MOSFET DESCRIPTION The UTC 60N06 is n-channel enhancement mode power field effect transistors with stable off-state characteristics, fast
More informationPPMT12V4 P-Channel MOSFET
P-Channel MOSFET Description The enhancement mode MOS is extremely high density cell and low on-resistance. D(3) MOSFET Product Summary V DS (V) R DS(on) (Ω) I D (A) -2 0.045 @ V GS =-4.5V -4.3 G() S(2)
More informationSSF11NS65UF 650V N-Channel MOSFET
Main Product Characteristics V DSS R DS(on) I D 650V 0.32Ω (typ.) 11A TO-220F Marking and Pin S c h e m a ti c Dia g r a m Assignment Features and Benefits High dv/dt and avalanche capabilities 100% avalanche
More informationDevice Marking Device Device Package Reel Size Tape width Quantity SIP3210 SIP3210 SOP-8 330mm
SIAI N-Channel Enhancement Mode Power MOSFET DESCRIPTION The SIP3210 uses advanced trench technology and design to provide excellent R DS(ON) with low gate charge. It can be used in a wide variety of applications.
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TSM8NA3CR N-Channel Power MOSFET 3V, 85A,.8mΩ FEATURES Low R DS(ON) to minimize conductive losses Low gate charge for fast power switching % UIS and R g tested Compliant to RoHS directive 2/65/EU and in
More informationUNISONIC TECHNOLOGIES CO., LTD UTD408
UNISONIC TECHNOLOGIES CO., LTD UTD408 N-CHANNEL ENHANCEMENT MODE FEATURES * R DS(ON) < 18 mω @ V GS =10V, I D =18A R DS(ON) < 27 mω @ V GS =4.5V, I D =10A * Low capacitance * Optimized gate charge * Fast
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P-Channel MOSFET Description The enhancement mode MOS is extremely high density cell and low on-resistance. D(3) MOSFET Product Summary V DS (V) R DS(on) (Ω) I D (A) -20 0.037 @ V GS =-4.5V -4 G() S(2)
More informationSchematic diagram R DS(ON) < V GS =10V. Marking and pin assignment Uninterruptible power supply
FNK N-Channel Enhancement Mode Power MOSFET Description The FNK 85H21 uses advanced trench technology and design to provide excellent R DS(ON) with low gate charge. It can be used in automotive applications
More informationHCS80R1K4E 800V N-Channel Super Junction MOSFET
HCS80R1K4E 800V N-Channel Super Junction MOSFET Features Very Low FOM (R DS(on) X Q g ) Extremely low switching loss Excellent stability and uniformity 100% Avalanche Tested Application Switch Mode Power
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TSM6NLCR N-Channel Power MOSFET V, 46A, 6mΩ FEATURES Low R DS(ON) to minimize conductive losses Logic level Low gate charge for fast power switching % UIS and R g tested Compliant to RoHS directive 2/65/EU
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N & P-Channel -V (D-S) MOSFET Key Features: Low r DS(on) trench technology Low thermal impedance Fast switching speed Typical Applications: LED Inverter Circuits DC/DC Conversion Circuits Motor drives
More informationNCE6012AS. NCE N-Channel Enhancement Mode Power MOSFET. Description. General Features. Application
http://www.ncepower.com NCE N-Channel Enhancement Mode Power MOSFET Description The uses advanced trench technology and design to provide excellent R DS(ON) with low gate charge. It can be used in a wide
More informationDevice Marking Device Device Package Reel Size Tape width Quantity NCEP8818AS NCEP8818AS SOP-8 Ø330mm 12mm 2500 units
http://www.ncepower.com NCE N-Channel Super Trench Power MOSFET Description The uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance.
More informationUNISONIC TECHNOLOGIES CO., LTD UT6401
UNISONIC TECHNOLOGIES CO., LTD UT64 5A, 3V P-CHANNEL ENHANCEMENT MODE 3 DESCRIPTION The UTC UT64 is P-channel enhancement mode Power MOSFET, designed with high density cell, with fast switching speed,
More informationHCA80R250T 800V N-Channel Super Junction MOSFET
HCA80R250T 800V N-Channel Super Junction MOSFET Features Very Low FOM (R DS(on) X Q g ) Extremely low switching loss Excellent stability and uniformity 100% Avalanche Tested Application Switch Mode Power
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TSM33NB4LCR N-Channel Power MOSFET 4V, 2A, 3.3mΩ FEATURES Low R DS(ON) to minimize conductive losses Logic level Low gate charge for fast power switching % UIS and R g tested. 75 C Operating Junction Temperature
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TSM652CR N- and P-Channel 6V (D-S) Power MOSFET FEATURES Low R DS(ON) to minimize conductive losses Low gate charge for fast power switching % UIS and R g tested Compliant to RoHS directive 2/65/EU and
More informationPE6018. N-Channel Enhancement Mode Power MOSFET. Description. General Features. Application. Absolute Maximum Ratings (T C =25 unless otherwise noted)
N-Channel Enhancement Mode Power MOSFET Description The PE6018 uses advanced trench technology and design to provide excellent R DS(ON) with low gate charge. It D can be used in a wide variety of applications.
More informationHCS80R380R 800V N-Channel Super Junction MOSFET
HCS8R38R 8V N-Channel Super Junction MOSFET Features Very Low FOM (R DS(on) X Q g ) Extremely low switching loss Excellent stability and uniformity % Avalanche Tested Application Switch Mode Power Supply
More informationPNMT50V02E N-Channel MOSFET
N-Channel MOSFET Description The MOSFET provide the best combination of fast switching, low on-resistance and cost-effectiveness. MOSFET Product Summary V DS (V) R DS(on) (Ω) I D (A) 5 @V GS =V.22 D (3)
More informationUNISONIC TECHNOLOGIES CO., LTD
UNISONIC TECHNOLOGIES CO., LTD P-CHANNEL ENHANCEMENT MODE POWER MOSFET DESCRIPTION The uses advanced trench technology to provide excellent R DS(ON), low gate charge and operation with low gate voltages.
More informationDevice Marking Device Device Package Reel Size Tape width Quantity 6075K FNK6075K TO-252-2L Parameter Symbol Limit Unit
FNK N-Channel Enhancement Mode Power MOSFET Description The FNK6075K uses advanced trench technology and design to provide excellent R DS(ON) with low gate charge. It can be used in a wide variety of applications.
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