Package Code P : TO-220FB-3L. Date Code YYXXX WW
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1 N-Channel Enhancement Mode MOSFET Features Pin Description 3V/ 29A R DS(ON) =.6mΩ =V % EAS Guaranteed Super Low Gate Charge Excellent CdV/dt effect decline Advanced high cell density Trench technology Halogen - Free Device Available G D S G D S TO-22FB-3L TO-263-2L Applications High Frequency Synchronous Buck Converters for Computer Processor Power D High Frequency Isolated DC-DC Converters with Synchronous Rectification for Telecom and Industrial Use G N-Channel MOSFET Ordering and Marking Information S P HY493 YYXXXJWW ÿ G B HY493 ÿ YYXXXJWW G Package Code P : TO-22FB-3L Date Code YYXXX WW B: TO-263-2L Assembly Material G : Lead Free Device Note: HOOYI lead-free products contain molding compounds/die attach materials and % matte tin plate termination finish; which are fully compliant with RoHS. HOOYI lead-free products meet or exceed the lead-free requirements of IPC/JEDEC J-STD-2D for MSL classification at lead-free peak reflow temperature. HOOYI defines Green to mean lead-free (RoHS compliant) and halogen free (Br or Cl does not exceed 9ppm by weight in homogeneous material and total of Br and Cl does not exceed 5ppm by weight). HOOYI reserves the right to make changes to improve reliability or manufacturability without notice, and advise customers to obtain the latest version of relevant information to verify before placing orders. 532
2 Absolute Maximum Ratings Symbol Parameter Rating Unit Common Ratings (T C=25 C Unless Otherwise Noted) V DSS Drain-Source Voltage 3 S Gate-Source Voltage ±2 T J Maximum Junction Temperature 75 C T STG Storage Temperature Range -55 to 75 C I S Diode Continuous Forward Current T C =25 C 29 A Mounted on Large Heat Sink I DM Pulsed Drain Current * T C =25 C ** A I D P D Continuous Drain Current T C =25 C 29 T C = C 2 A Maximum Power Dissipation T C =25 C 24 T c = C 7 W R θjc Thermal Resistance-Junction to Case.7 C/W R θja Thermal Resistance-Junction to Ambient 62.5 C/W E AS Avalanche Energy,Single Pulsed L=.5mH 325*** mj Note * Repetitive rating ; pulse width limiited by junction temperature ** Drain current is limited by junction temperature *** VD=24V V Electrical Characteristics (T C = 25 C Unless Otherwise Noted) Symbol Parameter Test Conditions Static Characteristics HY493 Min. Typ. Max. BV DSS Drain-Source Breakdown Voltage =V, I DS =25µA V I DSS Zero Gate Voltage Drain Current V DS = 3V, =V - - T J =85 C (th) Gate Threshold Voltage V DS =, I DS =25µA V I GSS Gate Leakage Current =±2V, V DS =V - - ± na R DS(ON) Drain-Source On-state Resistance Diode Characteristics =V, I DS =45A mω V SD * Diode Forward Voltage I SD =45 A, =V -.8. V t rr Reverse Recovery Time ns I DS =45A, dl SD /dt=a/µs Reverse Recovery Charge nc Q rr * Unit =4.5V, I DS =45A mω µa 2
3 Electrical Characteristics (Cont.) (T C = 25 C Unless Otherwise Noted) HY493 Symbol Parameter Test Conditions Unit Min. Typ. Max. Dynamic Characteristics R G Gate Resistance =V,V DS =V,F=MHz Ω C iss Input Capacitance =V, C oss Output Capacitance V DS =25V, Reverse Transfer Capacitance Frequency=.MHz C rss t d(on) Turn-on Delay Time T r Turn-on Rise Time V DD =5V, R G =3.3Ω, I DS =45A, = V, ns t d(off) Turn-off Delay Time T f Turn-off Fall Time Gate Charge Characteristics Q g Total Gate Charge V DS=24V, V Q gs Gate-Source Charge GS = V, nc I DS =45A Gate-Drain Charge Q gd Note * : Pulse test ; pulse width 3µs, duty cycle 2%.. pf 3
4 Typical Operating Characteristics Power Dissipation Drain Current Ptot - Power (W) T C =25 o C ID - Drain Current (A) T C =25 o C,V G =V limited by package Tc- Temperature ( C) Tc-Case Temperature ( C) Case Safe Operation Area ID - Drain Current (A) Rds(on) Limit us ms ms DC. 4 VDS - Drain - Source Voltage (V) Thermal Transient Impedance Normalized Effective Transient... Single Duty =.5.2 Mounted on minimum pad R θja :62.5 o C/W..... Square Wave Pulse Duration (sec) 4
5 Typical Operating Characteristics (Cont.) Output Characteristics Drain-Source On Resistance 64 4 ID - Drain Current (A) = 7,8,9,V 6V 5V 4V 3V RDS(ON) - On - Resistance (mω) 3 2 =4.5V =V VDS - Drain-Source Voltage (V) ID - Drain Current (A) Drain-Source On Resistance Gate Threshold Voltage RDS(ON) - On - Resistance (mω) I DS =45A Normalized Threshold Vlotage I DS =25µA VGS - Gate - Source Voltage (V) Tj - Junction Temperature ( C) 5
6 Typical Operating Characteristics (Cont.) Drain-Source On Resistance Source-Drain Diode Forward = V I DS = 45A 2 Normalized On Resistance IS - Source Current (A) T j =75 o C T j =25 o C.4 R =25 o j C:.6m Ω Tj - Junction Temperature ( C) VSD - Source-Drain Voltage (V) Capacitance Gate Charge C - Capacitance (pf) 22 Frequency=MHz Ciss Coss 2 Crss VGS - Gate-source Voltage (V) V DS =24V 9 I DS =45A VDS - Drain - Source Voltage (V) QG - Gate Charge (nc) 6
7 Avalanche Test Circuit and Waveforms V DS L t p V DSX(SUS) DUT V DS I AS R G V DD V DD tp I L.W E AS t AV Switching Time Test Circuit and Waveforms V DS DUT R D V DS 9% R G V DD % tp t d(on) t r t d(off) t f 7
8 Package Information TO-22FB-3L SYMBOL MIN NOM MAX MIN NOM MAX A A A b b c D D DEP E E E e 2.54 BSC. BSC e 5.8 BSC.2 BSC H L L L2 2.5 REF.98 REF P P Q θ θ θ
9 TO-263-2L SYMBOL MM INCH MIN NOM MAX MIN NOM MAX A A A A b b c D E E e 2.54 BSC. BSC H H L L L2 2.5 REF.98 REF L4.25 BSC. BSC ΦP DEP
10 Devices Per Unit Package Type Unit Quantity TO-22FB-3L Tube 5 TO-263-2L Tube 5 Classification Profile
11 Classification Reflow Profiles Profile Feature Sn-Pb Eutectic Assembly Pb-Free Assembly Preheat & Soak Temperature min (T smin) Temperature max (T smax) Time (T smin to T smax) (t s) C 5 C 6-2 seconds 5 C 2 C 6-2 seconds Average ramp-up rate (T smax to T P) 3 C/second max. 3 C/second max. Liquidous temperature (T L) Time at liquidous (t L) Peak package body Temperature (T p)* Time (t P)** within 5 C of the specified classification temperature (T c) 83 C 6-5 seconds 27 C 6-5 seconds See Classification Temp in table See Classification Temp in table 2 2** seconds 3** seconds Average ramp-down rate (T p to T smax) 6 C/second max. 6 C/second max. Time 25 C to peak temperature 6 minutes max. 8 minutes max. * Tolerance for peak profile Temperature (T p) is defined as a supplier minimum and a user maximum. ** Tolerance for time at peak profile temperature (t p) is defined as a supplier minimum and a user maximum. Table. SnPb Eutectic Process Classification Temperatures (Tc) Package Volume mm 3 Thickness <35 Table 2. Pb-free Process Classification Temperatures (Tc) Volume mm 3 35 <2.5 mm 235 C 22 C 2.5 mm 22 C 22 C Package Thickness Volume mm 3 <35 Volume mm Volume mm 3 >2 <.6 mm 26 C 26 C 26 C.6 mm 2.5 mm 26 C 25 C 245 C 2.5 mm 25 C 245 C 245 C Reliability Test Program Test item Method Description SOLDERABILITY JESD-22, B2 5 Sec, 245 C HOLT JESD-22, A8 Hrs, 25 C PCT JESD-22, A2 68 Hrs, %RH, 2atm, 2 C TCT JESD-22, A4 5 Cycles, -65 C~5 C
P HY1906. B HY1906 ÿ YYXXXJWW G HY1906P/B. Features. N-Channel Enhancement Mode MOSFET V / 120A, R DS(ON)
N-Channel Enhancement Mode MOSFET Features Pin Description 60V / 120A, R DS(ON) = 6.0 mω (typ.) @ V GS =V Avalanche Rated Reliable and Rugged Lead Free and Green Devices Available (RoHS Compliant) G D
More informationP HY4004. B HY4004 ÿ YYXXXJWW G HY4004P/B. Features. N-Channel Enhancement Mode MOSFET. 100% avalanche tested. Switching application
N-Channel Enhancement Mode MOSFET Features Pin Description 40V/ 208A R DS(ON) = 2.5 mω (typ.) @ V GS =0V 00% avalanche tested Reliable and Rugged Lead Free and Green DevicesAvailable (RoHS Compliant) G
More informationPackage Code. Date Code YYXXX WW
N-Channel Enhancement Mode MOSFET Features Pin Description 8V/ 2A R DS(ON) = 2.9 mω (typ.) @ V GS =1V 1% avalanche tested Reliable and Rugged Lead Free and Green DevicesAvailable (RoHS Compliant) G D S
More informationDate Code Assembly Material
N-Channel Enhancement Mode MOSFET Features 80V/ 200A R DS(ON) = 2.9 mω (typ.) @ V GS =10V 100% avalanche tested Reliable and Rugged Lead Free and Green DevicesAvailable (RoHS Compliant) Pin Description
More informationDate Code Assembly Material
N-Channel Enhancement Mode MOSFET Features 80V/ 170A R DS(ON) = 3.8 mω (typ.) @ V GS =10V 100% avalanche tested Reliable and Rugged Lead Free and Green DevicesAvailable (RoHS Compliant) Pin Description
More informationG D S. Package Code U : TO-251-3L HY1908. Date Code YYXXX WW
N-Channel Enhancement Mode MOSFET Features Pin Description 80V/90A, 7.8 R DS(ON) = mω (typ.) @ V GS =V Avalanche Rated Reliable and Rugged Lead Free and Green DevicesAvailable (RoHS Compliant) G D S G
More informationadvise customers to obtain the latest version of relevant information to verify before placing orders.
N-Channel Enhancement Mode MOSFET Features Pin Description 68V/ 70A R DS(ON) = 6.5mΩ (typ.) @ V GS =V 0% avalanche tested Reliable and Rugged Lead Free and Green DevicesAvailable (RoHS Compliant) G D S
More informationSymbol Parameter Rating Unit Common Ratings (T C=25 C Unless Otherwise Noted) V DSS
Absolute Maximum Ratings Symbol Parameter Rating Unit Common Ratings (T C=25 C Unless Otherwise Noted) V DSS Drain-Source Voltage 3 V GSS Gate-Source Voltage ±2 T J Maximum Junction Temperature 75 C T
More informationPackage Code S : SOP-8. Date Code YYXXX WW
N-Channel Enhancement Mode MOSFET Features 100 V/8 A R DS(ON) = 20 m Ω (typ.) @ V GS =10V Avalanche Rated Reliable and Rugged Lead Free and Green DevicesAvailable (RoHS Compliant) Pin Description D D D
More informationAPM8005K. Pin Description. Features. Applications. Ordering and Marking Information. Dual N-Channel Enhancement Mode MOSFET 80V/4.
Dual N-Channel Enhancement Mode MOSFET Features Pin Description 80V/4.7A, R DS(ON) =45mΩ (Typ.) @ V GS = 10V R DS(ON) =55mΩ (Typ.) @ V GS = 5V Reliable and Rugged Lead Free and Green Devices Available
More informationAssembly Material. Handling Code Temperature Range Package Code
Dual Enhancement Mode MOSFET (N- and P-Channel) Features Pin Description N-Channel 20V/3A, R DS(ON) =50mΩ(typ.) @ =4.5V R DS(ON) =65mΩ(typ.) @ =2.5V P-Channel -20V/-2A, R DS(ON) =90mΩ(typ.) @ =-4.5V R
More informationSM7320ESQG. Features. Ordering and Marking Information. Dual N-Channel Enhancement Mode MOSFET. Channel 1 30V/64A, R DS(ON) = 2.5mΩ (max.
Dual N-Channel Enhancement Mode MOSFET Features Pin Description Channel 3V/64A, R DS(ON) = 5.2mΩ (max.) @ = V R DS(ON) = 7.5mΩ (max.) @ = 4.5V Channel 2 3V/85A, G2 S2S2S2 D G DD S/D2 (Pin 9) DFN5x6D-8_EP2
More informationPackage Code. Handling Code. Assembly Material
P-Channel Enhancement Mode MOSFET Features Pin Description -2V/-4.9A, R DS(ON) =43mΩ (Max.) @ V GS =-4.5V R DS(ON) =58mΩ (Max.) @ V GS =-2.5V R DS(ON) =88mΩ (Max.) @ V GS =-1.8V 1% UIS + R g Tested Reliable
More informationP-Channel Enhancement Mode MOSFET
Features -3V/-3, =46mΩ (typ.) @ V GS =-1V =55mΩ (typ.) @ V GS =-4.5V =79mΩ (typ.) @ V GS =-2.5V Super High Dense Cell Design Reliable and Rugged Enhance ESD Cell Protection Lead Free and Green Devices
More informationHandling Code Temperature Range
N-Channel Enhancement Mode MOSFET Features Pin Description 60V/12A, R DS(ON) = 6.6mW (max.) @ V GS =V R DS(ON) = 8.0mW (max.) @ V GS =4.5V 0% UIS + R g Tested Reliable and Rugged Lead Free and Green Devices
More informationFeatures. Ordering and Marking Information. N-Channel Enhancement Mode MOSFET 150V/35A, R DS(ON) = 10V 100% UIS + R g. = 38mW(max.
N-Channel Enhancement Mode MOSFET Features Pin Description 15V/35A, R DS(ON) = 38mW(max.) @ V GS = V % UIS + R g Tested Reliable and Rugged Lead Free and Green Devices Available (RoHS Compliant) G DS Top
More informationFeatures. N-Channel Enhancement Mode MOSFET 30V/50A, R DS(ON) =10V
N-Channel Enhancement Mode MOSFET Features Pin Description 3V/5, R DS(ON) =7.5mΩ (typ.) @ =V R DS(ON) =12mΩ (typ.) @ =4.5V Super High Dense Cell Design Reliable and Rugged valanche Rated D G S Top View
More informationFeatures. Ordering and Marking Information. N-Channel Enhancement Mode MOSFET 30V/5.1A, R DS(ON)
N-Channel Enhancement Mode MOSFET Features Pin Description 30V/5.1A, R DS(ON) =25mΩ(max.) @ V GS =10V R DS(ON) =35mΩ(max.) @ V GS =4.5V Reliable and Rugged Lead Free and Green Devices Available (RoHS Compliant)
More informationFeatures. Ordering and Marking Information. N-Channel Enhancement Mode MOSFET 40V/66A, R DS(ON) =3.2mW V GS. =10V =4mW (Max.
N-Channel Enhancement Mode MOSFET Features Pin Description 4V/66A, R DS(ON) =3.2mW (Max.) @ V GS =V R DS(ON) =4mW (Max.) @ V GS =4.5V % UIS + R g Tested D G S Reliable and Rugged Lead Free and Green Devices
More informationSM1A16PSU/UB. Features. Ordering and Marking Information. P-Channel Enhancement Mode MOSFET -100V/-13A, R DS(ON) =-10V
P-Channel Enhancement Mode MOSFET Features Pin Configuration -0V/-13A, R DS(ON) =205mΩ (max.) @ V GS =-V R DS(ON) =300mΩ (max.) @ V GS =-4V Reliable and Rugged D S G S D G Lead Free and Green Devices Available
More informationG : Halogen and Lead Free Device SM 3403 XXXXX - Lot Code XXXXX
P-Channel Enhancement Mode MOSFET Features -2V/-95A, = 3.6mΩ(max.) @ =-1V = 4.6mΩ(max.) @ =-4.5V = 7mΩ(max.) @ =-2.5V = 1mΩ(max.) @ =-1.8V HBM ESD protection level of 2.3KV typical 1% UIS + R g Tested
More informationFeatures. Ordering and Marking Information. N-Channel Enhancement Mode MOSFET 100V/8A, R DS(ON) = 10V. = V GS = 4.5V Reliable and Rugged
N-Channel Enhancement Mode MOSFET Features Pin Description V/8, R DS(ON) = 29mΩ(max.) @ V GS = V R DS(ON) = 33mΩ(max.) @ V GS = 4.5V Reliable and Rugged G D S Lead Free and Green Devices vailable (RoHS
More informationFeatures. Ordering and Marking Information. N-Channel Enhancement Mode MOSFET 100V/15A, R DS(ON) = 10V. = V GS = 4.
N-Channel Enhancement Mode MOSFET Features 100V/15A, R DS(ON) = 100mW(max.) @ V GS = 10V R DS(ON) = 110mW(max.) @ V GS = 4.5V 100% UIS + R g Tested ESD Protection Reliable and Rugged Lead Free and Green
More informationHandling Code Temperature Range Package Code
N-Channel Enhancement Mode MOSFET Features Pin Description 30V/50A, R DS(ON) =.5mW (max.) @ V GS =V R DS(ON) =14.5mW (max.) @ V GS =4.5V 0% UIS + R g Tested D G S Reliable and Rugged Lead Free and Green
More informationPin Description. Features. Ordering and Marking Information. Dual Enhancement Mode MOSFET (N- and P-Channel) N-Channel 20V/8A, R DS(ON)
Dual Enhancement Mode MOSFET (N- and ) Features Pin Description V/8A, R DS(ON) =mω(typ.) @ =.5V R DS(ON) =3mΩ(typ.) @ =.5V -V/-.3A, R DS(ON) =8mΩ(typ.) @ =-.5V R DS(ON) =5mΩ(typ.) @ =-.5V Super High Dense
More informationFeatures. Ordering and Marking Information. Dual Enhancement Mode MOSFET (N- and P-Channel)
Dual Enhancement Mode MOSFET (N- and ) Features Pin Description N-Channel 4V/6.5A, R DS(ON) = mω (typ.) @ = V R DS(ON) = 8mΩ (typ.) @ = 4.5V -4V/-5A, R DS(ON) = 35mΩ (typ.) @ =-V R DS(ON) = 48mΩ (typ.)
More informationPackage Code. Handling Code. Assembly Material
P-Channel Enhancement Mode MOSFET Features Pin Description -2V/-4.6, R DS(ON) = 48mW (Max.) @ V GS =-4.5V R DS(ON) = 7mW (Max.) @ V GS =-2.5V R DS(ON) =mw (Max.) @ V GS =-.8V Reliable and Rugged Lead Free
More informationFeatures. Ordering and Marking Information. N-Channel Enhancement Mode MOSFET 20V/6A, R DS(ON) =10V =30mW V GS. =25mW (max.
SM23NS N-Channel Enhancement Mode MOSFET Features Pin Description 2V/6, R DS(ON) =25mW (max.) @ =V R DS(ON) =3mW (max.) @ =4.5V R DS(ON) =4mW (max.) @ =2.5V R DS(ON) =6mW (max.) @ =.8V D G S Reliable and
More informationSM2607CSC. Features. Ordering and Marking Information. Dual Enhancement Mode MOSFET (N- and P-Channel) N-Channel 20V/5A, R DS(ON)
Dual Enhancement Mode MOSFET (N- and P-Channel) Features Pin Description N-Channel 2V/5A, R DS(ON) =38mW(max.) @ =4.5V R DS(ON) =54mW(max.) @ =2.5V R DS(ON) =85mW(max.) @ =.8V P-Channel -2V/-3.3A, R DS(ON)
More informationFeatures. Ordering and Marking Information. N-Channel Enhancement Mode MOSFET 30V/60A, R DS(ON) =5.7mW V GS. =10V =9mW (Max.
N-Channel Enhancement Mode MOSFET Features Pin Description 3V/6A, R DS(ON) =5.7mW (Max.) @ V GS =V R DS(ON) =9mW (Max.) @ V GS =4.5V % UIS + R g Tested D G S Reliable and Rugged Lead Free and Green Devices
More informationFeatures. P-Channel Enhancement Mode MOSFET
P-Channel Enhancement Mode MOSFET Features Pin Description -20V/-3 R DS(ON) = 56mΩ (typ.) @ V GS = -4.5V R DS(ON) = 85mΩ (typ.) @ V GS = -2.5V R DS(ON) = 135mΩ (typ.) @ V GS = -1.8V Super High Dense Cell
More informationFeatures. Ordering and Marking Information. N-Channel Enhancement Mode MOSFET 100V/16A, R DS(ON) =10V
N-Channel Enhancement Mode MOSFET Features Pin Description 1V/16, R DS(ON) = 1mW (max.) @ V GS =1V R DS(ON) = 17mW (max.) @ V GS =4.5V ESD Protected Reliable and Rugged Lead Free and Green Devices vailable
More informationSM4337NSKP. Features. Ordering and Marking Information. N-Channel Enhancement Mode MOSFET 30V/55A, R DS(ON) =7.1mW V GS
N-Channel Enhancement Mode MOSFET Features Pin Description 3V/55, R DS(ON) =7.1mW (max.) @ V GS =V R DS(ON) =mw (max.) @ V GS =4.5V % E S (UIS) test ESD Protection D D D D S S S G DFN5x6-8 Pin 1 Lead Free
More informationHandling Code Temperature Range Package Code. Assembly Material
N-Channel Enhancement Mode MOSFET Features 75V/7 a, R DS(ON) = 4.3mW (Max.) @ V GS =V Reliable and Rugged Lead Free and Green Devices vailable (RoHS Compliant) Pin Description D S G Top View of TO-263-3
More informationSM4377NSKP. Features. Ordering and Marking Information. N-Channel Enhancement Mode MOSFET 30V/50A, R DS(ON) =10V = 9.6mW (max.
N-Channel Enhancement Mode MOSFET Features Pin Description 3V/5A, R DS(ON) = 7mW (max.) @ V GS =V R DS(ON) = 9.6mW (max.) @ V GS =4.5V Provide Excellent Qgd x Rds-on % UIS + R g Tested Reliable and Rugged
More informationFeatures. Ordering and Marking Information. Dual N-Channel Enhancement Mode MOSFET
Dual N-Channel Enhancement Mode MOSFET Features Pin Description 60V/5, R DS(ON) =38mΩ(Typ.) @ = V R DS(ON) =55mΩ(Typ.) @ = 4.5V Super High Dense Cell Design Reliable and Rugged Lead Free and Green Devices
More informationFeatures. Ordering and Marking Information. N-Channel Enhancement Mode MOSFET 30V/85A, R DS(ON) =10V = 4.6mW V GS. = 3mW (Max.
N-Channel Enhancement Mode MOSFET Features Pin Description 3V/85, R DS(ON) = 3mW (Max.) @ V GS =V R DS(ON) = 4.6mW (Max.) @ V GS =4.5V Reliable and Rugged D G S Lead Free and Green Devices vailable (RoHS
More informationHandling Code Temperature Range. TU : Tube. Assembly Material
N-Channel Enhancement Mode MOSFET Features Pin Description 650V/20A, R DS(ON) = 0.8W(max.) @ V GS = V V @Tj, max=750v (typ.) DS Reliable and Rugged Avalanche Rated Lead Free and Green Devices Available
More informationSM2001CS K : Features. Ordering and Marking Information. Dual Enhancement Mode MOSFET (N- and P-Channel) N-Channel 20V/9.
Dual Enhancement Mode MOSFET (N- and P-Channel) Features N-Channel V/9.5A, P-Channel R DS(ON) =4mW(max.) @ = 4.5V R DS(ON) =8mW(max.) @ =.5V -V/-6A, R DS(ON) =45mW(max.) @ =-4.5V R DS(ON) =65mW(max.) @
More informationFeatures. Ordering and Marking Information. N-Channel Enhancement Mode MOSFET 30V/4.7A, R DS(ON) =10V V GS. =40mW(max.
N-Channel Enhancement Mode MOSFET Features Pin Description 3V/4.7, R DS(ON) =4mW(max.) @ V GS =V R DS(ON) =6mW(max.) @ V GS =4.5V Reliable and Rugged Lead Free and Green Devices vailable (RoHS Compliant)
More informationN-Channel Enhancement Mode MOSFET
N-Channel Enhancement Mode MOSFET Features Pin Description 25V/5, R DS(ON) =8.5mΩ (typ.) @ V GS =1V R DS(ON) =15mΩ (typ.) @ V GS =4.5V Super High Dense Cell Design valanche Rated Reliable and Rugged Lead
More informationSM2408NSAN. Applications. Ordering and Marking Information. N-Channel Enhancement Mode MOSFET
N-Channel Enhancement Mode MOSFET Features Pin Description 30V/4.8A R DS(ON) =31.2mΩ(max.)@V GS =10V R DS(ON) =54.6mΩ(max.)@V GS =4.5V D S Reliable and Rugged Lead Free and Green Devices Available (RoHS
More informationFeatures. Ordering and Marking Information. Dual Enhancement Mode MOSFET (N- and P-Channel) N-Channel 20V/3A, R DS(ON)
Dual Enhancement Mode MOSFET (N- and P-Channel) Features Pin Description N-Channel 20V/3A, =50mΩ(typ.) @ =4.5V =65mΩ(typ.) @ =2.5V P-Channel -20V/-2A, =90mΩ(typ.) @ =-4.5V =30mΩ(typ.) @ =-2.5V Reliable
More informationFeatures. N-Channel Enhancement Mode MOSFET 40V/57A, R DS(ON) =10V
PM41NU N-Channel Enhancement Mode MOSFET Features Pin Description 4V/57, R DS(ON) =8.2mΩ (typ.) @ V GS =1V R DS(ON) =13mΩ (typ.) @ V GS =5V Super High Dense Cell Design Reliable and Rugged Lead Free and
More informationS1 / D2 (3)(4) (2)(5)(6)(7)
Dual N-Channel Enhancement Mode MOSFET Features Channel 3V/24A, R DS(ON) = 3.9mW (max.) @ = V R DS(ON) = 6.5mW (max.) @ = 4.5V Channel 2 3V/44A, R DS(ON) =.2mW (max.) @ =V R DS(ON) = 2mW (max.) @ =4.5V
More informationFeatures. N-Channel Enhancement Mode MOSFET 25V/60A, R DS(ON) =10V
N-Channel Enhancement Mode MOSFET Features Pin Description 25V/6, R DS(ON) =4.5mΩ (typ.) @ V GS =V R DS(ON) =7.5mΩ (typ.) @ V GS =4.5V Super High Dense Cell Design Reliable and Rugged Lead Free and Green
More informationFeatures. Ordering and Marking Information. P-Channel Enhancement Mode MOSFET -20V/-12.2A, R DS(ON) =-4.5V =-2.5V. = 14mW(max.
P-Channel Enhancement Mode MOSFET Features Pin Description -2V/-12.2, = 14mW(max.) @ V GS =-4.5V = 2mW(max.) @ V GS =-2.5V = 32mW(max.) @ V GS =-1.8V Reliable and Rugged Lead Free and Green Devices vailable
More informationTemperature Range Package Code
N-Channel Enhancement Mode MOSFET Features Pin Description 3V/5, R DS(ON) =4.8mΩ (typ.) @ V GS =V R DS(ON) =7mΩ (typ.) @ V GS =4.5V Super High Dense Cell Design Reliable and Rugged Lead Free and Green
More informationFeatures. Ordering and Marking Information. P-Channel Enhancement Mode MOSFET -30V/-9.3A, R DS(ON) =-10V = V GS. = 24mW(max.
P-Channel Enhancement Mode MOSFET Features Pin Description -3V/-9.3, R DS(ON) = 24mW(max.) @ V GS =-V R DS(ON) = 38mW(max.) @ V GS =-4.5V Reliable and Rugged Lead Free and Green Devices vailable (RoHS
More informationFeatures. Ordering and Marking Information. P-Channel Enhancement Mode MOSFET -60V/-15A, R DS(ON) =-10V
P-Channel Enhancement Mode MOSFET Features -6V/-15, R DS(ON) =93mΩ(max.) @ V GS =-1V R DS(ON) =128mΩ(max.) @ V GS =-4.5V Reliable and Rugged Lead Free and Green Devices vailable (RoHS Compliant) 1% UIS
More informationFeatures. Ordering and Marking Information. P-Channel Enhancement Mode MOSFET -30V/-68A, R DS(ON) =-10V = V GS. = 9mW(max.
P-Channel Enhancement Mode MOSFET Features -3V/-68, R DS(ON) = 9mW(max.) @ V GS =-V R DS(ON) = 5mW(max.) @ V GS =-4.5V Reliable and Rugged Lead Free and Green Devices vailable (RoHS Compliant) HBM ESD
More informationFeatures. N-Channel Enhancement Mode MOSFET
N-Channel Enhancement Mode MOSFET Features Pin Description V/5, R DS(ON) = 35mΩ (Typ.) @ V GS = V R DS(ON) = 45mΩ (Typ.) @ V GS = 4.5V R DS(ON) = mω (Typ.) @ V GS =.5V Super High Dense Cell Design Reliable
More informationFeatures. Ordering and Marking Information. P-Channel Enhancement Mode MOSFET
P-Channel Enhancement Mode MOSFET Features Pin Description -2V/-4, =48mΩ(typ.) @ V GS =-4.5V =85mΩ(typ.) @ V GS =-2.5V =135mΩ(typ.) @ V GS =-1.8V Super High Dense Cell Design Reliable and Rugged Lead Free
More informationRU1HP60R. P-Channel Advanced Power MOSFET. Applications. Absolute Maximum Ratings -100V/-60A,
P-Channel Advanced Power MOSFET Features -V/-6A, R DS (ON) =8mΩ(Typ.)@V GS =-V Low On-Resistance Super High Dense Cell Design Fast Switching and Fully Avalanche Rated % avalanche tested 75 C Operating
More informationAPM4953. Features. Pin Description. Applications. Ordering and Marking Information. Absolute Maximum Ratings (T A
Dual P-Channel Enhancement Mode MOSFET Features Pin Description -3V/-4.9A, R DS(ON) = 53mΩ(typ.) @ V GS = -V R DS(ON) = 8mΩ(typ.) @ V GS = -4.5V S 8 Super High Density Cell Design G 7 Reliable and Rugged
More informationAPM9948K. Pin Description. Features. Applications. Ordering and Marking Information. Dual N-Channel Enhancement Mode MOSFET 60V/4A, R DS(ON) = 10V
ual N-Channel Enhancement Mode MOSFET Features 60V/4, R S(ON) = 60mΩ(typ.) @ V GS = 0V R S(ON) = 72mΩ(typ.) @ V GS = 4.5V Super High ense Cell esign Reliable and Rugged Lead Free and Green evices vailable
More informationKS3304DA. Single P-Channel Advanced Power MOSFET. Applications. Absolute Maximum Ratings
Single P-Channel Advanced Power MOSFET Features -3V/-A, R DS (ON) =mω(typ.)@v GS =-V R DS (ON) =7.2mΩ(Typ.)@V GS =-4.V Low R DS (ON) Super High Dense Cell Design Reliable and Rugged G Pin Description D
More informationFeatures. Ordering and Marking Information. Dual N-Channel Enhancement Mode MOSFET 20V/9A, R DS(ON) = V GS = 4.5V = 4V = 3.
ual N-Channel Enhancement Mode MOSFET Features 2V/9, = 9.5mW(max.) @ = 4.5V = mw(max.) @ = 4V =.5mW(max.) @ = 3.7V = 11.5mW(max.) @ = 3.1V = 13mW(max.) @ = 2.5V Reliable and Rugged ES Protected Lead Free
More informationTO-252 Pin Configuration
WSF46 General Description The WSF46 is the highest performance trench with extreme high cell density, which provide excellent RDSON and gate charge for most of the synchronous buck converter applications.
More informationFeatures. Ordering and Marking Information. N-Channel Enhancement Mode MOSFET 30V/7.4A, R DS(ON)
SM268NSC N-Channel Enhancement Mode MOSFET Features Pin escription 3V/7.4, R S(ON) = 7mΩ(max.) @ V GS =V R S(ON) = 2.5mΩ(max.) @ V GS =4.5V Reliable and Rugged Lead Free and Green evices vailable (RoHS
More informationFeatures. Symbol Parameter Rating Units V DS Drain-Source Voltage 650 V V GS Gate-Source Voltage ±30 V
General Description These N-Channel enhancement mode power field effect transistors are using Super Junction technology. This advanced technology has been especially tailored to minimize on-state resistance,
More informationFeatures. Ordering and Marking Information. N-Channel Enhancement Mode MOSFET
N-Channel Enhancement Mode MOFET Features Pin Description 3V/7, R D(ON) =4.5mΩ (typ.) @ V G = V R D(ON) =6mΩ (typ.) @ V G = 4.5V uper High Dense Cell Design valanche Rated Reliable and Rugged Lead Free
More informationN-Channel Enhancement Mode MOSFET
Features 20V/3A, R DS(ON) =50mΩ(typ.) @ V GS =4.5V Pin Description R DS(ON) =90mΩ(typ.) @ V GS =2.5V Super High Dense Cell Design Reliable and Rugged Lead Free Available (RoHS Compliant) Top View of SOT23-3L
More informationRU20P5E. P-Channel Advanced Power MOSFET. Applications. Absolute Maximum Ratings
P-Channel Advanced Power MOSFET Features -2V/-5A, R DS (ON) =5mΩ(Typ.)@V GS =-4.5V R DS (ON) =65mΩ(Typ.)@V GS =-3V Low On-Resistance Super High Dense Cell Design Reliable and Rugged Lead Free and Green
More informationRU30P4B. P-Channel Advanced Power MOSFET. Applications. Absolute Maximum Ratings
RU3P4B P-Channel Advanced Power MOSFET Features -25V/-4A, R DS (ON) =5mΩ(Typ.)@V GS =-V R DS (ON) =6mΩ(Typ.)@V GS =-4.5V R DS (ON) =8mΩ(Typ.)@V GS =-2.5V Low On-Resistance Super High Dense Cell Design
More informationUNISONIC TECHNOLOGIES CO., LTD
UNISONIC TECHNOLOGIES CO., LTD 6A, 6V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 6N6 is N-channel enhancement mode power field effect transistors with stable off-state characteristics, fast switching speed,
More informationFeatures. Symbol Parameter Rating Units V DS Drain-Source Voltage 60 V V GS Gate-Source Voltage ±20 V
General Description These N-Channel enhancement mode power field effect transistors are using trench DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance,
More informationPFP15T140 / PFB15T140
FEATURES 1% EAS Test Super high density cell design Extremely Low Intrinsic Capacitances Remarkable Switching Characteristics Extended Safe Operating Area Lower R DS(ON) : 6. mω (Typ.) @ =1V 15V N-Channel
More informationRU20P7C. P-Channel Advanced Power MOSFET. Applications. Absolute Maximum Ratings. -20V/-5A, R DS (ON) GS =-2.5V
P-Channel Advanced Power MOSFET Features -V/-5A, R DS (ON) =mω(typ.)@v GS =-4.5V R DS (ON) =3mΩ(Typ.)@V GS =-.5V Low On-Resistance Super High Dense Cell Design Reliable and Rugged Lead Free and Green Devices
More informationWSR70P10. Absolute Maximum Ratings. BV DSS R DSON I D -100V 18mΩ -70A. Dec General Description. Product Summery.
WSR7P General Description The WSR7P is the highest performance trench with extreme high cell density, which provide excellent R DSON and gate charge for most of the small power switching and load switch
More informationV DSS Drain-Source Voltage 60 V V GSS Gate-Source Voltage ±25 T J Maximum Junction Temperature 175 C T STG
N-Channel Advanced HV Power MOSFET Features Pin Description 60V/200A RDS (ON)=2.8 mω(typ.) @ VGS=10V Avalanche Rated Reliable and Rugged Lead Free and Green Devices Available Applications Automotive applications
More informationN-Channel Enhancement Mode Field Effect Transistor
PRODUCT SUMMARY V (BR)DSS R DS(ON) I D 75 8mΩ 8A G D S. GATE 2. DRAIN 3. SOURCE ABSOLUTE MAXIMUM RATINGS (T C = 25 C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS Gate-Source Voltage
More informationProduct Summery. Applications
General Description The QM3056M6 is the highest performance trench N-ch MOSFETs with extreme high cell density, which provide excellent RDSON and gate charge for most of the synchronous buck converter
More informationRU4953BH. P-Channel Advanced Power MOSFET. Applications. Absolute Maximum Ratings
P-Channel Advanced Power MOSFET Features -3V/-5A, R DS (ON) =5mΩ(Typ.)@V GS =-V R DS (ON) =7mΩ(Typ.)@V GS =-4.5V Low On-Resistance Super High Dense Cell Design Reliable and Rugged Lead Free and Green Devices
More informationUNISONIC TECHNOLOGIES CO., LTD
UNISONIC TECHNOLOGIES CO., LTD 60 Amps, 60 Volts N-CHANNEL POWER MOSFET DESCRIPTION The UTC 60N06 is n-channel enhancement mode power field effect transistors with stable off-state characteristics, fast
More informationRU6888R. N-Channel Advanced Power MOSFET MOSFET. Applications. Absolute Maximum Ratings TO-220
N-Channel Advanced Power MOSFET MOSFET Features 68V/88A, RDS (ON) =6mΩ (Typ.) @ VGS=10V Pin Description Ultra Low On-Resistance Exceptional dv/dt capability Fast Switching and Fully Avalanche Rated 100%
More informationDevice Marking Device Device Package Reel Size Tape width Quantity TO-252-2L. Parameter Symbol Limit Unit
HM80N05K N-Channel Enhancement Mode Power MOSFET Description The uses advanced trench technology and design to provide excellent R DS(ON) with low gate charge. It can be used in a wide variety of applications.
More informationUNISONIC TECHNOLOGIES CO., LTD UTT150N03 Preliminary Power MOSFET
UNISONIC TECHNOLOGIES CO., LTD UTT150N03 Preliminary Power MOSFET N-CHANNEL ENHANCEMENT MODE POWER MOSFET DESCRIPTION The UTC UTT150N03 is a N-channel power MOSFET, using UTC s advanced trench technology
More informationRU7088 N-Channel Advanced Power MOSFET MOSFET Features Pin Description Applications
N-Channel Advanced Power MOSFET MOSFET Features 70V/80A, RDS (ON) =6.5mΩ (Type) VGS=10V I DS =40A Pin Description Ultra Low On-Resistance Exceptional dv/dt capability Fast Switching and Fully Avalanche
More informationRU30D20H. N-Channel Advanced Power MOSFET. Applications. Absolute Maximum Ratings. S2 Dual N-Channel MOSFET
N-Channel Advanced Power MOSFET Features 3V/2A, R DS (ON) =mω(typ.)@v GS =V R DS (ON) =2mΩ(Typ.)@V GS =4.V Fast Switching Speed Low gate Charge % avalanche tested Lead Free and Green Devices Available
More informationP-Channel Enhancement Mode Power MOSFET
DESCRIPTION The uses advanced trench technology to provide excellent R DS(ON), low gate charge and operation with gate voltages as low as 4.5V. This device is suitable for use as a load switch or in PWM
More informationTaiwan Goodark Technology Co.,Ltd
TGD N-Channel Enhancement Mode Power MOSFET Description The uses advanced trench technology and design to provide excellent R DS(ON) with low gate charge. It can be used in a wide variety of applications.
More informationP-Channel Enhancement Mode MOSFET
Features -20V/-3A, R DS(ON) =72mΩ(typ.) @ V GS =-4.5V Pin Description R DS(ON) =98mΩ(typ.) @ V GS =-2.5V Super High Dense Cell Design Reliable and Rugged Lead Free Available (RoHS Compliant) Top View of
More informationRU75N08. N-Channel Advanced Power MOSFET MOSFET. Applications. Absolute Maximum Ratings. Switching Application Systems.
N-Channel Advanced Power MOSFET MOSFET Features 75V/80A, RDS (ON) =8mΩ VGS=10V I DS =40A Pin Description Ultra Low On-Resistance Exceptional dv/dt capability Fast Switching and Fully Avalanche Rated 100%
More informationACE3006M N-Channel Enhancement Mode MOSFET
Description uses advanced trench technology to provide excellent R DS(ON). This device particularly suits for low voltage application such as power management of desktop computer or notebook computer power
More informationRU75N08S. N-Channel Advanced Power MOSFET. Applications. Absolute Maximum Ratings TO-263. Switching Application Systems.
N-Channel Advanced Power MOSFET Features 75V/80A, RDS (ON) =8mΩ (typ.) @VGS=10V Pin Description Ultra Low On-Resistance Exceptional dv/dt capability Fast Switching and Fully Avalanche Rated 100% avalanche
More informationTaiwan Goodark Technology Co.,Ltd
TGD N-Channel Enhancement Mode Power MOSFET Description The uses advanced trench technology and design to provide excellent R DS(ON) with low gate charge. It can be used in a wide variety of applications.
More informationPJM8205DNSG Dual N Enhancement Field Effect Transistor
DESCRIPTIONS The uses advanced trench technology to provide excellent R DS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a Battery protection
More informationRU12150R. S N-Channel MOSFET. N-Channel Advanced Power MOSFET. Applications. Absolute Maximum Ratings. 120V/150A, R DS (ON) =8.5mΩ(Typ.
N-Channel Advanced Power MOSFET Features 2V/5A, R DS (ON) =8.5mΩ(Typ.)@V GS =V Reliable and Rugged % avalanche tested 75 C Operating Temperature Lead Free and Green Devices Available (RoHS Compliant) Pin
More informationFeatures. Symbol Parameter Rating Units V DS Drain-Source Voltage 20 V V GS Gate-Source Voltage ±10 V
General Description These N-Channel enhancement mode power field effect transistors are using trench DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance,
More informationRU30C8H. Complementary Advanced Power MOSFET. Applications. Absolute Maximum Ratings. N-Channel 30V/8A, P-Channel -30V/-7A,
RUC8H Complementary Advanced Power MOSFET Features N-Channel V/8A, R DS (ON) =mω(typ.) @ V GS =V R DS (ON) =6mΩ(Typ.) @ V GS =4.5V P-Channel -V/-7A, R DS (ON) =8mΩ (Typ.) @ V GS =-V R DS (ON) =5mΩ (Typ.)
More informationSSG4503 N-Ch: 6.9A, 30V, R DS(ON) 25 mω P-Ch: -6.3A, -30V, R DS(ON) 36 mω N & P-Ch Enhancement Mode Power MOSFET
RoHS Compliant Product A suffix of -C specifies halogen & lead-free DESCRIPTION The is the highest performance trench N-ch and P-ch MOSFETs with extreme high cell density, which provide excellent R DSON
More informationTaiwan Goodark Technology Co.,Ltd TGD0103M
TGD N-Channel Enhancement Mode Power MOSFET Description The uses advanced trench technology and design to provide excellent R DS(ON) with low gate charge. It can be used in a wide variety of applications.
More informationDevice Marking Device Device Package Reel Size Tape width Quantity SIP3210 SIP3210 SOP-8 330mm
SIAI N-Channel Enhancement Mode Power MOSFET DESCRIPTION The SIP3210 uses advanced trench technology and design to provide excellent R DS(ON) with low gate charge. It can be used in a wide variety of applications.
More informationPE6018. N-Channel Enhancement Mode Power MOSFET. Description. General Features. Application. Absolute Maximum Ratings (T C =25 unless otherwise noted)
N-Channel Enhancement Mode Power MOSFET Description The PE6018 uses advanced trench technology and design to provide excellent R DS(ON) with low gate charge. It D can be used in a wide variety of applications.
More informationRU1HE16L. N-Channel Advanced Power MOSFET MOSFET. Applications. Absolute Maximum Ratings TO252. Power Management. N-Channel MOSFET
N-Channel Advanced Power MOSFET MOSFET Features 100V/16A, RDS (ON) =70mΩ(Typ.)@VGS=10V RDS (ON) =85mΩ(Typ.)@VGS=4.5V Pin Description Super High Dense Cell Design ESD protected Reliable and Rugged Lead
More informationSSG4504 N & P-Ch Enhancement Mode Power MOSFET N-Ch: 7.2 A, 40 V, R DS(ON) 30 mω P-Ch: -6.5A, -40 V, R DS(ON) 40 mω
RoHS Compliant Product A suffix of -C specifies halogen & lead-free DESCRIPTION The is the highest performance trench N-ch and P-ch MOSFETs with extreme high cell density, which provide excellent R DSON
More informationSSF6014D 60V N-Channel MOSFET
Main Product Characteristics V DSS 60V R DS(on) 12mΩ(typ.) I D 60A Features and Benefits TO-252 (DPAK) Marki ng and P i n Assignment S c h e m a ti c Dia g r a m Advanced trench MOSFET process technology
More informationDevice Marking Device Device Package Reel Size Tape width Quantity NCEP8818AS NCEP8818AS SOP-8 Ø330mm 12mm 2500 units
http://www.ncepower.com NCE N-Channel Super Trench Power MOSFET Description The uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance.
More informationParameter Symbol Limit Unit
N-Channel Enhancement Mode Power MOSFET Description The PE3050K uses advanced trench technology and design to provide excellent R DS(ON) with low gate charge. It can be used in a wide variety of applications.
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