PJM8205DNSG Dual N Enhancement Field Effect Transistor

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1 DESCRIPTIONS The uses advanced trench technology to provide excellent R DS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a Battery protection or in other Switching application. G1 D1 S1 G2 D2 S2 FEATURES V DS = 20V,I D = 6A Typ.R DS(ON) = V GS =4.5V Typ.R DS(ON) = V GS =2.5V High power and current handing capability Lead free product is acquired Surface mount package Schematic diagram pin assignment APPLICATIONS Battery protection Load switch Power management SOT-26(TSOP-6) Top view Absolute Maximum Ratings (T A =25 unless otherwise noted) Parameter Symbol Limit Unit Drain-Source Voltage VDS 20 V Gate-Source Voltage VGS ±12 V Drain Current-Continuous I D 6 A Drain Current-Pulsed (Note 1) I DM 25 A Maximum Power Dissipation P D 1.5 W Operating Junction and Storage Temperature Range T J,T STG -55 To 150 Thermal Characteristic Thermal Resistance,Junction-to-Ambient (Note 2) R θja 83 /W Electrical Characteristics (T A =25 unless otherwise noted) Parameter Symbol Condition Min Typ Max Unit Off Characteristics Drain-Source Breakdown Voltage BV DSS V GS =0V I D =250μA V Zero Gate Voltage Drain Current I DSS V DS =20V,V GS =0V μa 1 / 8

2 Electrical Characteristics (T A =25 unless otherwise noted) Off Characteristics Gate-Body Leakage Current I GSS V GS =±12V,V DS =0V - - ±100 na On Characteristics (Note 3) Gate Threshold Voltage V GS(th) V DS =V GS,I D =250μA V Drain-Source On-State Resistance R DS(ON) V GS =4.5V, I D =4.5A mω V GS =2.5V, I D =3.5A mω Forward Transconductance g FS V DS =5V,I D =4.5A S Dynamic Characteristics (Note4) Input Capacitance C lss PF V DS =10V,V GS =0V, Output Capacitance C oss PF F=1.0MHz Reverse Transfer Capacitance PF Switching Characteristics (Note 4) C rss Turn-on Delay Time t d(on) ns Turn-on Rise Time t r V DD =10V,I D =1A ns Turn-Off Delay Time t d(off) V GS =4.5V,R GEN =6Ω ns Turn-Off Fall Time t f ns Total Gate Charge Q g V DS =10V,I D =6A, nc Gate-Source Charge Q gs V GS =4.5V nc Gate-Drain Charge nc Drain-Source Diode Characteristics Q gd Diode Forward Voltage (Note 3) V SD V GS =0V,I S =1.7A V Diode Forward Current (Note 2) I S A Notes: Parameter Symbol Condition Min Typ Max Unit Drain-Source Breakdown Voltage BV DSS V GS =0V I D =250μA V Zero Gate Voltage Drain Current I DSS V DS = 20V,V GS =0V μa 1. Repetitive Rating: Pulse width limited by maximum junction temperature. 2. Surface Mounted on FR4 Board, t 10 sec. 3. Pulse Test: Pulse Width 300μs, Duty Cycle 2%. 4. Guaranteed by design, not subject to production 2 / 8

3 TYPICAL CHARACTERTICS CURVES Typical Electrical and Thermal Characteristics Vdd t on t off Vgs Rgen Vin G D Rl Vout t d(on) V OUT t r 10% t d(off) 90% INVERTED t f 90% 10% S V IN 90% 50% 50% 10% PULSE WIDTH Figure 1:Switching Test Circuit Figure 2:Switching Waveforms PD Power(W) ID- Drain Current (A) T J -Junction Temperature( ) Figure 3 Power Dissipation T J -Junction Temperature( ) Figure 4 Drain Current ID- Drain Current (A) Rdson On-Resistance(mΩ) Vds Drain-Source Voltage (V) Figure 5 Output Characteristics I D - Drain Current (A) Figure 6 Drain-Source On-Resistance 3 / 8

4 Vgs Gate-Source Voltage (V) Figure 7 Transfer Characteristics T J -Junction Temperature( ) Figure 8 Drain-Source On-Resistance Vgs Gate-Source Voltage (V) Figure 9 Rdson vs Vgs Vds Drain-Source Voltage (V) Figure 10 Capacitance vs Vds Vgs Gate-Source Voltage (V) Is- Reverse Drain Current (A) Rdson On-Resistance(mΩ) C Capacitance (pf) ID- Drain Current (A) Normalized On-Resistance Qg Gate Charge (nc) Figure 11 Gate Charge Vsd Source-Drain Voltage (V) Figure 12 Source- Drain Diode Forward 4 / 8

5 Vds Drain-Source Voltage (V) Figure 13 Safe Operation Area r(t),normalized Effective Transient Thermal Impedance ID- Drain Current (A) Square Wave Pluse Duration(sec) Figure 14 Normalized Maximum Transient Thermal Impedance 5 / 8

6 PACKAGE OUTLINE b E1 E D A A2 c A1 e L e1 θ Dimensions in Millimeters Symbol Min Max A Dimensions in Inches Min Max RECOMMENDED SOLDERING PAD Dimensions in Millimeters A A b c D E E e 0.95 (BSC) (BSC) L e θ ORDER INFORMATION Device Package Shipping SOT /Reel&Tape(7inch) 6 / 8

7 CONDITIONS OF SOLDERING AND STORAGE Recommended condition of reflow soldering Recommended peak temperature is over 245 O C. If peak temperature is below 245 O C, you may adjust the following parameters: Time length of peak temperature (longer) Time length of soldering (longer) Thickness of solder paste (thicker) Conditions of hand soldering Temperature: 370 O C Time: 3s max. Times: one time Storage conditions Temperature 5 to 40 O C Humidity 30 to 80% RH Recommended period One year after manufacturing 7 / 8

8 PACKAGE SPECIFICATIONS The method of packaging SOT-26 3,000 pcs per reel 30,000 pcs per box 10 reels per box ,000 pcs per carton 4 boxes per carton Embossed tape and reel data T G B 8.0 E A C H Tape (8mm) F N D 120 ±2 Reel (7'') Symbol A 3.17 ± 0.1 B 3.23 ± 0.1 C 1.37 ± 0.1 E 2 ± 0.5 F 13 ± 0.5 D 178 ± 2.0 G 9.5 ± 1.0 H 4 ± 0.5 N 60 Value (unit: mm) T < / 8

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