PJM8205DNSG Dual N Enhancement Field Effect Transistor
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- Ginger May
- 5 years ago
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1 DESCRIPTIONS The uses advanced trench technology to provide excellent R DS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a Battery protection or in other Switching application. G1 D1 S1 G2 D2 S2 FEATURES V DS = 20V,I D = 6A Typ.R DS(ON) = V GS =4.5V Typ.R DS(ON) = V GS =2.5V High power and current handing capability Lead free product is acquired Surface mount package Schematic diagram pin assignment APPLICATIONS Battery protection Load switch Power management SOT-26(TSOP-6) Top view Absolute Maximum Ratings (T A =25 unless otherwise noted) Parameter Symbol Limit Unit Drain-Source Voltage VDS 20 V Gate-Source Voltage VGS ±12 V Drain Current-Continuous I D 6 A Drain Current-Pulsed (Note 1) I DM 25 A Maximum Power Dissipation P D 1.5 W Operating Junction and Storage Temperature Range T J,T STG -55 To 150 Thermal Characteristic Thermal Resistance,Junction-to-Ambient (Note 2) R θja 83 /W Electrical Characteristics (T A =25 unless otherwise noted) Parameter Symbol Condition Min Typ Max Unit Off Characteristics Drain-Source Breakdown Voltage BV DSS V GS =0V I D =250μA V Zero Gate Voltage Drain Current I DSS V DS =20V,V GS =0V μa 1 / 8
2 Electrical Characteristics (T A =25 unless otherwise noted) Off Characteristics Gate-Body Leakage Current I GSS V GS =±12V,V DS =0V - - ±100 na On Characteristics (Note 3) Gate Threshold Voltage V GS(th) V DS =V GS,I D =250μA V Drain-Source On-State Resistance R DS(ON) V GS =4.5V, I D =4.5A mω V GS =2.5V, I D =3.5A mω Forward Transconductance g FS V DS =5V,I D =4.5A S Dynamic Characteristics (Note4) Input Capacitance C lss PF V DS =10V,V GS =0V, Output Capacitance C oss PF F=1.0MHz Reverse Transfer Capacitance PF Switching Characteristics (Note 4) C rss Turn-on Delay Time t d(on) ns Turn-on Rise Time t r V DD =10V,I D =1A ns Turn-Off Delay Time t d(off) V GS =4.5V,R GEN =6Ω ns Turn-Off Fall Time t f ns Total Gate Charge Q g V DS =10V,I D =6A, nc Gate-Source Charge Q gs V GS =4.5V nc Gate-Drain Charge nc Drain-Source Diode Characteristics Q gd Diode Forward Voltage (Note 3) V SD V GS =0V,I S =1.7A V Diode Forward Current (Note 2) I S A Notes: Parameter Symbol Condition Min Typ Max Unit Drain-Source Breakdown Voltage BV DSS V GS =0V I D =250μA V Zero Gate Voltage Drain Current I DSS V DS = 20V,V GS =0V μa 1. Repetitive Rating: Pulse width limited by maximum junction temperature. 2. Surface Mounted on FR4 Board, t 10 sec. 3. Pulse Test: Pulse Width 300μs, Duty Cycle 2%. 4. Guaranteed by design, not subject to production 2 / 8
3 TYPICAL CHARACTERTICS CURVES Typical Electrical and Thermal Characteristics Vdd t on t off Vgs Rgen Vin G D Rl Vout t d(on) V OUT t r 10% t d(off) 90% INVERTED t f 90% 10% S V IN 90% 50% 50% 10% PULSE WIDTH Figure 1:Switching Test Circuit Figure 2:Switching Waveforms PD Power(W) ID- Drain Current (A) T J -Junction Temperature( ) Figure 3 Power Dissipation T J -Junction Temperature( ) Figure 4 Drain Current ID- Drain Current (A) Rdson On-Resistance(mΩ) Vds Drain-Source Voltage (V) Figure 5 Output Characteristics I D - Drain Current (A) Figure 6 Drain-Source On-Resistance 3 / 8
4 Vgs Gate-Source Voltage (V) Figure 7 Transfer Characteristics T J -Junction Temperature( ) Figure 8 Drain-Source On-Resistance Vgs Gate-Source Voltage (V) Figure 9 Rdson vs Vgs Vds Drain-Source Voltage (V) Figure 10 Capacitance vs Vds Vgs Gate-Source Voltage (V) Is- Reverse Drain Current (A) Rdson On-Resistance(mΩ) C Capacitance (pf) ID- Drain Current (A) Normalized On-Resistance Qg Gate Charge (nc) Figure 11 Gate Charge Vsd Source-Drain Voltage (V) Figure 12 Source- Drain Diode Forward 4 / 8
5 Vds Drain-Source Voltage (V) Figure 13 Safe Operation Area r(t),normalized Effective Transient Thermal Impedance ID- Drain Current (A) Square Wave Pluse Duration(sec) Figure 14 Normalized Maximum Transient Thermal Impedance 5 / 8
6 PACKAGE OUTLINE b E1 E D A A2 c A1 e L e1 θ Dimensions in Millimeters Symbol Min Max A Dimensions in Inches Min Max RECOMMENDED SOLDERING PAD Dimensions in Millimeters A A b c D E E e 0.95 (BSC) (BSC) L e θ ORDER INFORMATION Device Package Shipping SOT /Reel&Tape(7inch) 6 / 8
7 CONDITIONS OF SOLDERING AND STORAGE Recommended condition of reflow soldering Recommended peak temperature is over 245 O C. If peak temperature is below 245 O C, you may adjust the following parameters: Time length of peak temperature (longer) Time length of soldering (longer) Thickness of solder paste (thicker) Conditions of hand soldering Temperature: 370 O C Time: 3s max. Times: one time Storage conditions Temperature 5 to 40 O C Humidity 30 to 80% RH Recommended period One year after manufacturing 7 / 8
8 PACKAGE SPECIFICATIONS The method of packaging SOT-26 3,000 pcs per reel 30,000 pcs per box 10 reels per box ,000 pcs per carton 4 boxes per carton Embossed tape and reel data T G B 8.0 E A C H Tape (8mm) F N D 120 ±2 Reel (7'') Symbol A 3.17 ± 0.1 B 3.23 ± 0.1 C 1.37 ± 0.1 E 2 ± 0.5 F 13 ± 0.5 D 178 ± 2.0 G 9.5 ± 1.0 H 4 ± 0.5 N 60 Value (unit: mm) T < / 8
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N-Channel Trench Power MOSFET General Description The EZ8590 is N-channel MOS Field Effect Transistor designed for high current switching applications. Rugged EAS capability and ultra low R DS(ON) is suitable
More informationTHERMAL RESISTANCE RATINGS THERMAL RESISTANCE SYMBOL TYPICAL MAXIMUM UNITS Junction-to-Case R θjc 6 C / W Junction-to-Ambient R θja 42 C / W STATIC
N- & annel Enhancement Mode P3ND5G PRODUCT SUMMARY V (BR)DSS R DS(ON) I D annel 3 mω 5A annel -3 36mΩ -9A G D S G D S D/D SG S G G : GATE D : DRAIN S : SOURCE ABSOLUTE MAXIMUM RATINGS (T C = 5 C Unless
More informationUNISONIC TECHNOLOGIES CO., LTD UT4413
UNISONIC TECHNOLOGIES CO., LTD UT4413 P-CHANNEL ENHANCEMENT MODE DESCRIPTION The UT4413 uses advanced trench technology to provide excellent R DS(ON), low gate charge and operation with low gate voltages.
More informationS2 6 1 S1 3 D2 2 G1. Pin configuration (Top view) Parameter Symbol 10 S Steady State Unit Drain-Source Voltage V DS +20 Gate-Source Voltage V GS 6
Descriptions Features and Applications The SOT-363 is N-Channel enhancement MOS Field Effect Transistor. Uses advanced trench technology and design to provide excellent R DS (ON) with low gate charge.
More informationPNMT50V02E N-Channel MOSFET
N-Channel MOSFET Description The MOSFET provide the best combination of fast switching, low on-resistance and cost-effectiveness. MOSFET Product Summary V DS (V) R DS(on) (Ω) I D (A) 5 @V GS =V.22 D (3)
More informationP-Channel Enhancement Mode Field Effect Transistor
Description The uses advanced trench technology to provide excellent R DS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a load switch or in PWM
More informationAOL1422 N-Channel Enhancement Mode Field Effect Transistor
N-Channel Enhancement Mode Field Effect Transistor General Description The uses advanced trench technology and design to provide excellent R DS(ON) with low gate charge. This device is ESD protected and
More informationPDNM6ET20V05 Dual N-Channel, Digital FET
PDNM6ET2V5 Dual N-Channel, Digital FET Description The MOSFET provide the best combination of fast switching, low on-resistance and cost-effectiveness. MOSFET Product Summary V DS (V) R DS(on) (Ω) I D
More informationRM1002. N-Channel Enhancement Mode Power MOSFET. Description. General Features. Application. Marking:1002
RM1002 N-Channel Enhancement Mode Power MOSFET Description The 1002 uses advanced trench technology and design to provide excellent R DS(ON) with low gate charge. It can be used in a wide variety of applications.
More informationSymbol Parameter Rating Unit Common Ratings (T C=25 C Unless Otherwise Noted) V DSS
Absolute Maximum Ratings Symbol Parameter Rating Unit Common Ratings (T C=25 C Unless Otherwise Noted) V DSS Drain-Source Voltage 3 V GSS Gate-Source Voltage ±2 T J Maximum Junction Temperature 75 C T
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WPM5 Power MOSFET and Schottky Diode Features Featuring a MOSFET and Schottky Diode Independent Pinout to each Device to Ease Circuit Design Ultra Low V F Schottky Applications Li--Ion Battery Charging
More informationProduct Summary. BV DSS typ. 84 V. R DS(ON) typ. 6.8 mω I D 60 A
RM60N75LD N-Channel Enhancement Mode Power MOSFET General Description The RM60N75LD uses advanced trench technology and design to provide excellent R DS(ON) with low gate charge. It can be used in a wide
More informationSSF6014D 60V N-Channel MOSFET
Main Product Characteristics V DSS 60V R DS(on) 12mΩ(typ.) I D 60A Features and Benefits TO-252 (DPAK) Marki ng and P i n Assignment S c h e m a ti c Dia g r a m Advanced trench MOSFET process technology
More informationPPMT20V4E P-Channel MOSFET
P-Channel MOSFET Description The enhancement mode MOS is extremely high density cell and low on-resistance. D(3) MOSFET Product Summary V DS (V) R DS(on) (Ω) I D (A) -20 0.037 @ V GS =-4.5V -4 G() S(2)
More informationN- & P-Channel Enhancement Mode Field Effect Transistor
N- & annel Enhancement Mode P2OAG TSOP- PRODUCT SUMMARY V (BR)DSS R DS(ON) I D annel 2V mω.a annel -2V 5mΩ -2.5A G D G D D S D2 5 2 G : GATE D : DRAIN S : SOURCE S S G S2 G2 ABSOLUTE MAXIMUM RATINGS (T
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