Features. P-Channel Enhancement Mode MOSFET
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1 P-Channel Enhancement Mode MOSFET Features Pin Description -20V/-3 R DS(ON) = 56mΩ V GS = -4.5V R DS(ON) = 85mΩ V GS = -2.5V R DS(ON) = 135mΩ V GS = -1.8V Super High Dense Cell Design Reliable and Rugged Lead Free and Green Devices vailable ( RoHS Compliant) D S G Top View of SOT-23-3 D pplications G Power Management in Notebook Computer, Portable Equipment, and Battery Powered Systems. S P Channel MOSFET Ordering and Marking Information PM2301C ssembly Material Handling Code Temperature Range Package Code Package Code : SOT-23-3 Operating Junction Temperature Range C : -55 to 150 o C Handling Code TR : Tape & Reel ssembly Material G : Halogen and Lead Free Device PM2301C : C01X X - Date Code Note: NPEC lead-free products contain molding compounds/die attach materials and 100% matte tin plate termination finish; which are fully compliant with RoHS. NPEC lead-free products meet or exceed the lead-free requirements of IPC/JEDEC J-STD-020C for MSL classification at lead-free peak reflow temperature. NPEC defines Green to mean lead-free (RoHS compliant) and halogen free (Br or Cl does not exceed 900ppm by weight in homogeneous material and total of Br and Cl does not exceed 1500ppm by weight). NPEC reserves the right to make changes to improve reliability or manufacturability without notice, and advise customers to obtain the latest version of relevant information to verify before placing orders. Rev..7- Jul.,
2 bsolute Maximum Ratings (T = 25 C Unless Otherwise Noted) Symbol Parameter Rating Unit V DSS Drain-Source Voltage -20 V V GSS Gate-Source Voltage ±12 * I D * I DM * I S Continuous Drain Current -3 V GS =-4.5V 300µs Pulsed Drain Current -12 Diode Continuous Forward Current -1.3 T J Maximum Junction Temperature 150 C T STG Storage Temperature Range -55 to 150 P D * T =25 C 0.83 Maximum Power Dissipation W T =100 C 0.3 R θjc Thermal Resistance-Junction to Case 75 C/W R θj * Thermal Resistance-Junction to mbient 150 C/W Note : *Surface Mounted on 1in 2 pad area, t 10sec. Electrical Characteristics (T = 25 C Unless Otherwise Noted) Symbol Parameter Test Conditions PM2301C Min. Typ. Max. Unit Static Characteristics BV DSS Drain-Source Breakdown Voltage V GS =0V, I DS =250µ V I DSS V DS =-16V, V GS =0V Zero Gate Voltage Drain Current µ T J =85 C V GS(th) Gate Threshold Voltage V DS = V GS, I DS =-250µ V I GSS Gate Leakage Current V GS =±12V, V DS =0V - - ±10 µ V GS =-4.5V, I DS = R a DS(ON) a V SD Drain-Source On-State Resistance V GS =-2.5V, I DS = mω V GS =-1.8V, I DS = Diode Forward Voltage I SD =-1.3, V GS =0V V Gate Charge Characteristics b Q g Total Gate Charge Q gs Gate-Source Charge V DS =-10V, V GS =-4.5V, I DS = Gate-Drain Charge Q gd nc 2
3 Electrical Characteristics (Cont.) (T = 25 C Unless Otherwise Noted) Symbol Parameter Test Conditions Dynamic Characteristics b PM2301C Min. Typ. Max. C iss Input Capacitance V GS =0V, C oss Output Capacitance V DS =-10V, Reverse Transfer Capacitance Frequency=1.0MHz C rss t d(on) Turn-on Delay Time t r Turn-on Rise Time V DD =-10V, R L =10Ω, I DS =1, V GEN =-4.5V, t d(off) Turn-off Delay Time R G =6Ω Turn-off Fall Time t f t rr Reverse Recovery Time I SD =-3, ns Reverse Recovery Charge dl SD /dt =100/µs nc Q rr Note a : Pulse test ; pulse width 300µs, duty cycle 2%. Note b : Guaranteed by design, not subject to production testing. Unit pf ns 3
4 Typical Operating Characteristics Power Dissipation Drain Current P tot - Power (W) I D - Drain Current () T =25 o C T =25 o C,V G =-4.5V T J - Junction Temperature ( C) T J - Junction Temperature ( C) Safe Operation rea Thermal Transient Impedance I D - Drain Current () Rds(on) Limit 300µs 1ms 10ms 100ms 1s DC T =25 o C Normalized Effective Transient Single Pulse 0.2 Duty = 0.5 Mounted on 1in 2 pad R θj : 150 o C/W 1E-3 1E-4 1E V DS - Drain - Source Voltage (V) Square Wave Pulse Duration (sec) 4
5 Typical Operating Characteristics (Cont.) Output Characteristics Drain-Source On Resistance 12 V GS = -3,-4, -5, -6, -7, -8, -9, -10V V GS = -1.8V -I D - Drain Current () V -2V -1.5V R DS(ON) - On - Resistance (mω) V GS = -2.5V V GS = -4.5V V DS - Drain-Source Voltage (V) I D - Drain Current () Drain-Source On Resistance Gate Threshold Voltage 100 I D = I DS = -250µ R DS(ON) - On - Resistance (mω) Normalized Threshold Voltage V GS - Gate - Source Voltage (V) T J - Junction Temperature ( C) 5
6 Typical Operating Characteristics (Cont.) Drain-Source On Resistance Source-Drain Diode Forward V GS = -4.5V I DS = Normalized On Resistance I S - Source Current () 1 T j =150 o C T j =25 o C 0.4 R j =25 o C: 56mΩ T J - Junction Temperature ( C) -V SD - Source - Drain Voltage (V) Capacitance Gate Charge Frequency=1MHz V DS = -10V I DS = -3 C - Capacitance (nc) Crss Coss Ciss -V GS - Gate - Source Voltage (V) V DS - Drain - Source Voltage (V) Q G - Gate Charge (nc) 6
7 Package Information SOT-23-3 D e SEE VIEW E1 E b c e1 1 L 0 GUGE PLNE SETING PLNE S Y M B O L 1 2 b c D E E1 e e1 L MIN MILLIMETERS 0.95 BSC 1.90 BSC MX SOT-23-3 VIEW MIN INCHES BSC BSC MX Note : Dimension D and E1 do not include mold flash, protrusions or gate burrs. Mold flash, protrusion or gate burrs shall not exceed 10 mil per side. 7
8 Recommended Land Pattern SOT UNIT : mm Taping Direction Information SOT-23-3 USER DIRECTION OF FEED 8
9 Carrier Tape & Reel Dimensions OD0 P0 P2 P1 H E1 OD1 B T B0 W F K0 B 0 SECTION - SECTION B-B d T1 pplication H T1 C d D W E1 F MIN MIN MIN SOT-23-3 P0 P1 P2 D0 D1 T 0 B0 K MIN (mm) Devices Per Unit Package Type Unit Quantity SOT-23-3 Tape & Reel
10 Classification Profile Classification Reflow Profiles Profile Feature Sn-Pb Eutectic ssembly Pb-Free ssembly Preheat & Soak Temperature min (T smin) Temperature max (T smax) Time (T smin to T smax) (t s) 100 C 150 C seconds 150 C 200 C seconds verage ramp-up rate (T smax to T P) Liquidous temperature (T L) Time at liquidous (t L) Peak package body Temperature (T p)* Time (t P)** within 5 C of the specified classification temperature (T c) 3 C/second max. 3 C/second max. 183 C seconds 217 C seconds See Classification Temp in table 1 See Classification Temp in table 2 20** seconds 30** seconds verage ramp-down rate (T p to T smax) 6 C/second max. 6 C/second max. Time 25 C to peak temperature 6 minutes max. 8 minutes max. * Tolerance for peak profile Temperature (T p) is defined as a supplier minimum and a user maximum. ** Tolerance for time at peak profile temperature (t p) is defined as a supplier minimum and a user maximum. 10
11 Classification Reflow Profiles Table 1. SnPb Eutectic Process Classification Temperatures (Tc) Package Volume mm 3 Thickness <350 Table 2. Pb-free Process Classification Temperatures (Tc) Volume mm <2.5 mm 235 C 220 C 2.5 mm 220 C 220 C Package Thickness Volume mm 3 <350 Volume mm Volume mm 3 >2000 <1.6 mm 260 C 260 C 260 C 1.6 mm 2.5 mm 260 C 250 C 245 C 2.5 mm 250 C 245 C 245 C Reliability Test Program Test item Method Description SOLDERBILITY JESD-22, B102 5 Sec, 245 C HOLT JESD-22, Hrs, 125 C PCT JESD-22, Hrs, 100%RH, 2atm, 121 C TCT JESD-22, Cycles, -65 C~150 C Customer Service npec Electronics Corp. Head Office : No.6, Dusing 1st Road, SBIP, Hsin-Chu, Taiwan, R.O.C. Tel : Fax : Taipei Branch : 2F, No. 11, Lane 218, Sec 2 Jhongsing Rd., Sindain City, Taipei County 23146, Taiwan Tel : Fax :
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More informationFeatures. Ordering and Marking Information. N-Channel Enhancement Mode MOSFET 150V/35A, R DS(ON) = 10V 100% UIS + R g. = 38mW(max.
N-Channel Enhancement Mode MOSFET Features Pin Description 15V/35A, R DS(ON) = 38mW(max.) @ V GS = V % UIS + R g Tested Reliable and Rugged Lead Free and Green Devices Available (RoHS Compliant) G DS Top
More informationHandling Code Temperature Range Package Code
N-Channel Enhancement Mode MOSFET Features Pin Description 30V/50A, R DS(ON) =.5mW (max.) @ V GS =V R DS(ON) =14.5mW (max.) @ V GS =4.5V 0% UIS + R g Tested D G S Reliable and Rugged Lead Free and Green
More informationFeatures. Ordering and Marking Information. N-Channel Enhancement Mode MOSFET 30V/60A, R DS(ON) =5.7mW V GS. =10V =9mW (Max.
N-Channel Enhancement Mode MOSFET Features Pin Description 3V/6A, R DS(ON) =5.7mW (Max.) @ V GS =V R DS(ON) =9mW (Max.) @ V GS =4.5V % UIS + R g Tested D G S Reliable and Rugged Lead Free and Green Devices
More informationAPM4953. Features. Pin Description. Applications. Ordering and Marking Information. Absolute Maximum Ratings (T A
Dual P-Channel Enhancement Mode MOSFET Features Pin Description -3V/-4.9A, R DS(ON) = 53mΩ(typ.) @ V GS = -V R DS(ON) = 8mΩ(typ.) @ V GS = -4.5V S 8 Super High Density Cell Design G 7 Reliable and Rugged
More informationSM4377NSKP. Features. Ordering and Marking Information. N-Channel Enhancement Mode MOSFET 30V/50A, R DS(ON) =10V = 9.6mW (max.
N-Channel Enhancement Mode MOSFET Features Pin Description 3V/5A, R DS(ON) = 7mW (max.) @ V GS =V R DS(ON) = 9.6mW (max.) @ V GS =4.5V Provide Excellent Qgd x Rds-on % UIS + R g Tested Reliable and Rugged
More informationS1 / D2 (3)(4) (2)(5)(6)(7)
Dual N-Channel Enhancement Mode MOSFET Features Channel 3V/24A, R DS(ON) = 3.9mW (max.) @ = V R DS(ON) = 6.5mW (max.) @ = 4.5V Channel 2 3V/44A, R DS(ON) =.2mW (max.) @ =V R DS(ON) = 2mW (max.) @ =4.5V
More informationHandling Code Temperature Range. TU : Tube. Assembly Material
N-Channel Enhancement Mode MOSFET Features Pin Description 650V/20A, R DS(ON) = 0.8W(max.) @ V GS = V V @Tj, max=750v (typ.) DS Reliable and Rugged Avalanche Rated Lead Free and Green Devices Available
More informationFeatures. General Description. Applications. Pin Configuration. Ordering and Marking Information. Hall Effect Micro Switch IC
Hall Effect Micro Switch IC Features General Description Micro Power Operation for Battery Applications Chopper Stabilized Amplifier Independent of North or South Pole Magnet, Easy for Manufacture Small
More informationN-Channel Enhancement Mode MOSFET
Features 20V/3A, R DS(ON) =50mΩ(typ.) @ V GS =4.5V Pin Description R DS(ON) =90mΩ(typ.) @ V GS =2.5V Super High Dense Cell Design Reliable and Rugged Lead Free Available (RoHS Compliant) Top View of SOT23-3L
More informationFeatures. General Description. Applications. 8-PIN Synchronous Buck PWM Controller
8-PIN Synchronous Buck PWM Controller Features General Description Operating with Single 5V or 1V Input Drives N-Channel MOSFETs Simple Single-Loop Control Design - Voltage-Mode PWM Control - Full 0% to
More informationSingle-Phase Full-Wave Motor Driver with Built-in Hall Sensor. General Description
Single-Phase Full-Wave Motor Driver with uilt-in Hall Sensor Features On-chip Hall Sensor High Sensitivity Hall Effect Sensor IC: ±15G(Typ.) uilt-in Lock Protection and Auto Restart Function Speed Controllable
More informationUltra-Low-Noise, High PSRR, Low-Dropout, 300mA Linear Regulator V IN. Enable VIN 1 GND 2 SHDN 3
Ultra-Low-Noise, High PSRR, Low-Dropout, 300mA Linear Regulator Features General Description Wide Operating Voltage: 2.5~6V Low Dropout Voltage: 290mV@3V/300mA Fixed Output Voltages: 1.2~3.6V with Step
More informationHigh Input Voltage, Low Quiescent Current, 150mA LDO Regulator
High Input Voltage, Low Quiescent Current, 150mA LDO Regulator Features Wide Input Voltage Range: 5.4V to 25V Ultra Low Ground Current: 10mA High Output Accuracy: ±2.5% Excellent Load/Line Transient Low
More informationP-Channel Enhancement Mode MOSFET
Features -20V/-3A, R DS(ON) =72mΩ(typ.) @ V GS =-4.5V Pin Description R DS(ON) =98mΩ(typ.) @ V GS =-2.5V Super High Dense Cell Design Reliable and Rugged Lead Free Available (RoHS Compliant) Top View of
More informationRU20P5E. P-Channel Advanced Power MOSFET. Applications. Absolute Maximum Ratings
P-Channel Advanced Power MOSFET Features -2V/-5A, R DS (ON) =5mΩ(Typ.)@V GS =-4.5V R DS (ON) =65mΩ(Typ.)@V GS =-3V Low On-Resistance Super High Dense Cell Design Reliable and Rugged Lead Free and Green
More informationPackage Code. QF : VTDFN3x3-10 Operating Ambient Temperature Range I : -40 to 105 o C Handling Code TR : Tape & Reel. Handling Code Temperature Range
Three-Phase Sensor-Less Fan Motor Driver Features General Description Three-Phase Full-Wave Sensor-Less Drive Method Adjustable Forced Commutation Frequency (for Start-up) Built-In External PWM Speed Control
More informationRU20P7C. P-Channel Advanced Power MOSFET. Applications. Absolute Maximum Ratings. -20V/-5A, R DS (ON) GS =-2.5V
P-Channel Advanced Power MOSFET Features -V/-5A, R DS (ON) =mω(typ.)@v GS =-4.5V R DS (ON) =3mΩ(Typ.)@V GS =-.5V Low On-Resistance Super High Dense Cell Design Reliable and Rugged Lead Free and Green Devices
More informationRU1HP60R. P-Channel Advanced Power MOSFET. Applications. Absolute Maximum Ratings -100V/-60A,
P-Channel Advanced Power MOSFET Features -V/-6A, R DS (ON) =8mΩ(Typ.)@V GS =-V Low On-Resistance Super High Dense Cell Design Fast Switching and Fully Avalanche Rated % avalanche tested 75 C Operating
More informationGeneral Description. Applications 16 PGND OUT2 2 OUT OUT1 VCC 3 MIN 4 SET 5 NC 2 VCC 3 MIN 4 SET 5 14 SGND 13 CT 12 NC OSC 6 FG 7 OSC 6 FG 7
Direct PWM Variable Speed Fan Motor Driver Features General Description Single Phase Full Wave Fan Driver Low Supply Current Built-In Variable Speed Function Include Hall Bias Circuit Built-In Lock Protection
More informationRU30P4B. P-Channel Advanced Power MOSFET. Applications. Absolute Maximum Ratings
RU3P4B P-Channel Advanced Power MOSFET Features -25V/-4A, R DS (ON) =5mΩ(Typ.)@V GS =-V R DS (ON) =6mΩ(Typ.)@V GS =-4.5V R DS (ON) =8mΩ(Typ.)@V GS =-2.5V Low On-Resistance Super High Dense Cell Design
More information60 V GSS Gate-Source Voltage. 175 C T STG Storage Temperature Range. -55 to 175 C I S Diode Continuous Forward Current
N-Channel Advanced Power MOSFET Features 6V/5A, R DS (ON) =mω(typ.)@vgs=v R DS (ON) =2mΩ(Typ.)@VGS=4.5V Super High Dense Cell Design Ultra Low On-Resistance % avalanche tested Lead Free and Green Devices
More informationHEXFET Power MOSFET V DSS = -12V. R DS(on) = 0.05Ω. l Ultra Low On-Resistance l P-Channel MOSFET. Thermal Resistance.
l Ultra Low On-Resistance l P-Channel MOSFET l SOT-23 Footprint l Low Profile (
More informationRU4953BH. P-Channel Advanced Power MOSFET. Applications. Absolute Maximum Ratings
P-Channel Advanced Power MOSFET Features -3V/-5A, R DS (ON) =5mΩ(Typ.)@V GS =-V R DS (ON) =7mΩ(Typ.)@V GS =-4.5V Low On-Resistance Super High Dense Cell Design Reliable and Rugged Lead Free and Green Devices
More informationIRF7341. HEXFET Power MOSFET V DSS = 55V. R DS(on) = 0.050Ω
l Generation V Technology l Ultra Low On-Resistance l Dual N-Channel Mosfet l Surface Mount l vailable in Tape & Reel l Dynamic dv/dt Rating l Fast Switching Description Fifth Generation HEXFETs from International
More informationKS3304DA. Single P-Channel Advanced Power MOSFET. Applications. Absolute Maximum Ratings
Single P-Channel Advanced Power MOSFET Features -3V/-A, R DS (ON) =mω(typ.)@v GS =-V R DS (ON) =7.2mΩ(Typ.)@V GS =-4.V Low R DS (ON) Super High Dense Cell Design Reliable and Rugged G Pin Description D
More informationGeneral Description. Features. Applications. Pin Configuration. 1A Low Dropout, Fast Response Fixed Voltage Regulator APL1565A. Front View for SOP-8
1A Low Dropout, Fast Response Fixed Voltage Regulator Features General Description Guaranteed Output Voltage Accuracy within 2% Fast Transient Response Load Regulation : 1mV Typ. Line Regulation : 4mV
More informationGeneral Description. Lead Free and Green Device Available (RoHS Compliant) Pin Configuration
Single-Phase digital calibration Motor Pre-Driver for Fan Motor Features General Description Single Phase Fan Pre-Driver Easy digital programming (EDP.) Built-in direct PWM input terminal Built-in soft
More informationRU1HE16L. N-Channel Advanced Power MOSFET MOSFET. Applications. Absolute Maximum Ratings TO252. Power Management. N-Channel MOSFET
N-Channel Advanced Power MOSFET MOSFET Features 100V/16A, RDS (ON) =70mΩ(Typ.)@VGS=10V RDS (ON) =85mΩ(Typ.)@VGS=4.5V Pin Description Super High Dense Cell Design ESD protected Reliable and Rugged Lead
More informationRU20P4C. P-Channel Advanced Power MOSFET. Applications. Absolute Maximum Ratings SOT23-3. Power Management Load Switch.
P-Channel Advanced Power MOSFET Features -20V/-4A, RDS (ON) =40m (Typ.) @ VGS=-4.5V RDS (ON) =55m (Typ.) @ VGS=-2.5V Pin Description Low R DS (ON) Super High Dense Cell Design Reliable and Rugged Lead
More informationN-Channel Power MOSFET 30V, 185A, 1.8mΩ
TSM8NA3CR N-Channel Power MOSFET 3V, 85A,.8mΩ FEATURES Low R DS(ON) to minimize conductive losses Low gate charge for fast power switching % UIS and R g tested Compliant to RoHS directive 2/65/EU and in
More informationOUT2 1 IN- Package Code X : MSOP - 8. Temperature Range. I : -40 to 105 C Handling Code TR : Tape & Reel. Handling Code.
Single-Phase Full-Wave Motor Driver for Silent Fan Motor Features Single Phase Full Wave Fan Driver Silent Driver Low Supply Current Built-in Lock Protection and Auto Restart Function (External Capacitor
More informationRU30D20H. N-Channel Advanced Power MOSFET. Applications. Absolute Maximum Ratings. S2 Dual N-Channel MOSFET
N-Channel Advanced Power MOSFET Features 3V/2A, R DS (ON) =mω(typ.)@v GS =V R DS (ON) =2mΩ(Typ.)@V GS =4.V Fast Switching Speed Low gate Charge % avalanche tested Lead Free and Green Devices Available
More informationGate-Body Leakage Current I GSS V GS =±20V,V DS =0V - - ±100 na (Note 3) On Characteristics Gate Threshold Voltage V GS(th) V DS =V GS,I D =250μA 1.2
N-Channel Enhancement Mode Power MOSFET Description The HM5N06 uses advanced trench technology and design to provide excellent R DS(ON) with low gate charge. It can be used in a wide variety of applications.
More informationN-Channel Power MOSFET 150V, 1.4A, 480mΩ
TSM48N5CX6 N-Channel Power MOSFET 5V,.4A, 48mΩ FEATURES Low R DS(ON) to minimize conductive losses Low gate charge for fast power switching Compliant to RoHS directive /65/EU and in accordance to WEEE
More informationN-Channel Power MOSFET 30V, 78A, 3.8mΩ
TSM38N3PQ33 N-Channel Power MOSFET 3V, 78A, 3.8mΩ FEATURES Low R DS(ON) to minimize conductive losses Low gate charge for fast power switching % UIS and R g tested Compliant to RoHS directive 2/65/EU and
More informationUltra-Low On-Resistance, Power Load Switch with Soft Start V OUT
Ultra-Low On-Resistance, Power Load Switch with Soft Start Features General Description Ultra-Low On-Resistance: 5mW(typical) Low Quiescent Current: 0mA(max) Soft Start Time Programmable by External Capacitor
More informationRU12150R. S N-Channel MOSFET. N-Channel Advanced Power MOSFET. Applications. Absolute Maximum Ratings. 120V/150A, R DS (ON) =8.5mΩ(Typ.
N-Channel Advanced Power MOSFET Features 2V/5A, R DS (ON) =8.5mΩ(Typ.)@V GS =V Reliable and Rugged % avalanche tested 75 C Operating Temperature Lead Free and Green Devices Available (RoHS Compliant) Pin
More informationN-Channel Power MOSFET 60V, 70A, 12mΩ
TSM2N6LCP N-Channel Power MOSFET 6V, 7A, 2mΩ FEATURES Low R DS(ON) to minimize conductive losses Logic level Low gate charge for fast power switching % UIS and R g tested Compliant to RoHS directive 2/65/EU
More informationTaiwan Goodark Technology Co.,Ltd TGD0103M
TGD N-Channel Enhancement Mode Power MOSFET Description The uses advanced trench technology and design to provide excellent R DS(ON) with low gate charge. It can be used in a wide variety of applications.
More informationLNTR4003NLT1G. Small Signal MOSFET. 30 V, 0.56 A, Single, N Channel, Gate ESD Protection, SOT-23 LESHAN RADIO COMPANY, LTD. 1/5. and halogen free.
Small Signal MOSFET V,.56 A, Single, N Channel, Gate ESD Protection, SOT- Features Low Gate Voltage Threshold(Vgs(th))to Facilitate Drive Circuit Design Low Gate Charge for Fast Switching ESD Protected
More informationAPL3157. Applications. Pin Configuration. High-Density, +5.5V Capable DPDT Analog Switches
High-Density, +5.5V Capable DPDT Analog Switches Features Negative Audio and Video Signal Capable -0.3V to +5.5V Analog Signal Range Independent from VCC On-Resistance 0.2W (typ) +2.9V to +5.5V Single-Supply
More informationV OUT. Speed control voltage (V SET. Package Code. K : SOP-8 Operating Ambient Temperature Range I : -40 to 85 C Handling Code TR : Tape & Reel
Low Dropout 6mA Linear Regulator for DC Fan Control Features Low Dropout Voltage: mv (typical) @ 6mA Low Quiescent Current: 4mA Selectable Adjustable/Full Speed Mode O/I Voltage Ratio in Adjustable Mode
More informationTaiwan Goodark Technology Co.,Ltd TGD01P30
TGD P-Channel Enhancement Mode Power MOSFET Description The uses advanced trench technology and design to provide excellent R DS(ON) with low gate charge. It can be used in a wide variety of applications.
More informationN-Channel Power MOSFET 100V, 46A, 16mΩ
TSM6NLCR N-Channel Power MOSFET V, 46A, 6mΩ FEATURES Low R DS(ON) to minimize conductive losses Logic level Low gate charge for fast power switching % UIS and R g tested Compliant to RoHS directive 2/65/EU
More informationWPM3028 WPM3028. Descriptions. Features. Applications. Order information. Typical R DS(on) (mω) V GS =-10V V GS =-5V -30
WPM32 WPM32 Single P-Channel, -3V, -11.5A, Power MOSFET Http://www.sh-willsemi.com V DS (V) Typical R DS(on) (mω) -3 11@ =-1V 15 @ =-5V S S S G Descriptions The WPM32 is P-Channel enhancement MOS Field
More informationRU30C8H. Complementary Advanced Power MOSFET. Applications. Absolute Maximum Ratings. N-Channel 30V/8A, P-Channel -30V/-7A,
RUC8H Complementary Advanced Power MOSFET Features N-Channel V/8A, R DS (ON) =mω(typ.) @ V GS =V R DS (ON) =6mΩ(Typ.) @ V GS =4.5V P-Channel -V/-7A, R DS (ON) =8mΩ (Typ.) @ V GS =-V R DS (ON) =5mΩ (Typ.)
More informationTaiwan Goodark Technology Co.,Ltd
TGD N-Channel Enhancement Mode Power MOSFET Description The uses advanced trench technology and design to provide excellent R DS(ON) with low gate charge. It can be used in a wide variety of applications.
More information