RU20P4C. P-Channel Advanced Power MOSFET. Applications. Absolute Maximum Ratings SOT23-3. Power Management Load Switch.

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1 P-Channel Advanced Power MOSFET Features -20V/-4A, RDS (ON) =40m VGS=-4.5V RDS (ON) =55m VGS=-2.5V Pin Description Low R DS (ON) Super High Dense Cell Design Reliable and Rugged Lead Free and Green Available SOT23-3 Applications Power Management Load Switch Absolute Maximum Ratings P-Channel MOSFET Symbol Parameter Rating Unit Common Ratings (T A=25 C Unless Otherwise Noted) V DSS Drain-Source Voltage -20 V GSS Gate-Source Voltage ±12 V T J Maximum Junction Temperature 150 C T STG Storage Temperature Range -55 to 150 C I S Diode Continuous Forward Current T A =25 C -1.5 A Mounted on Large Heat Sink I DP 300μs Pulse Drain Current Tested T A =25 C A I D P D R JA 2 Continuous Drain Current(V GS =-4.5V) T A =25 C -4 T A =70 C -3.2 A Maximum Power Dissipation T A =25 C 1.3 T A =70 C 0.8 W Thermal Resistance-Junction to Ambient 100 C/W

2 Electrical Characteristics (T A =25 C Unless Otherwise Noted) Symbol Parameter Test Condition RU20P4C Min. Typ. Max. Unit Static Characteristics BV DSS Drain-Source Breakdown Voltage V GS =0V, I DS =-250 A -20 V I DSS V DS =-20V, V GS =0V -1 Zero Gate Voltage Drain Current A T J =85 C -30 V GS(th) Gate Threshold Voltage V DS =V GS, I DS =-250 A V I GSS Gate Leakage Current V GS =±10V, V DS =0V ±100 na R DS(ON) 3 Drain-Source On-state Resistance V GS =-4.5V, I DS =-4A m V GS =-2.5V, I DS =-3A m Diode Characteristics V SD 3 Diode Forward Voltage ISD =-1A, V GS =0V -1 V trr Reverse Recovery Time ISD=-4A, dlsd/dt=100a/ s 15 ns Qrr Reverse Recovery Charge 8 nc Dynamic Characteristics 4 R G Gate Resistance V GS =0V,V DS =0V,F=1MHz 7.5 C iss Input Capacitance VGS=0V, 585 C oss Output Capacitance VDS=-10V, 95 C rss Reverse Transfer Capacitance Frequency=1.0MHz 50 t d(on) Turn-on Delay Time 8 t r Turn-on Rise Time VDD=-10V, RL=2.5, 11 IDS=-4A, VGEN=-4.5V, t d(off) Turn-off Delay Time RG=6 30 t f Turn-off Fall Time 10 Gate Charge Characteristics 4 Q g Total Gate Charge 9 13 Q gs Gate-Source Charge VDS=-16V, VGS=-4.5V, IDS=-4A 1.8 Q gd Gate-Drain Charge 2.9 pf ns nc Notes: 1Pulse width limited by safe operating area. 2When mounted on 1 inch square copper board, t 10sec. The value in any given application depends on the user's specific board design. 3Pulse test ; Pulse width 300 s, duty cycle 2%. 4Guaranteed by design, not subject to production testing. 2

3 Typical Characteristics Power Dissipation Drain Current Ptot - Power (W) -ID - Drain Current (A) T j - Junction Temperature ( C) T j - Junction Temperature ( C) Safe Operation Area Thermal Transient Impedance -ID - Drain Current (A) Normalized Effective Transient -V DS - Drain-Source Voltage (V) Square Wave Pulse Duration (sec) 3

4 Typical Characteristics Output Characteristics Drain-Source On Resistance -ID - Drain Current (A) RDS(ON) - On Resistance (mω) -V DS - Drain-Source Voltage (V) -I D - Drain Current (A) Drain-Source On Resistance Gate Threshold Voltage RDS(ON) - On - Resistance (m ) Normalized Threshold Voltage -V GS - Gate-Source Voltage (V) T j - Junction Temperature ( C) 4

5 Typical Characteristics Drain-Source On Resistance Source-Drain Diode Forward Normalized On Resistance -IS - Source Current (A) T j - Junction Temperature ( C) -V SD - Source-Drain Voltage (V) Capacitance Gate Charge C - Capacitance (pf) -VGS - Gate-Source Voltage (V) -V DS - Drain-Source Voltage (V) Q G - Gate Charge (nc) 5

6 Avalanche Test Circuit and Waveforms Switching Time Test Circuit and Waveforms 6

7 Ordering and Marking Information Device Marking 1 Package Packaging Quantity Reel Size Tape width RU20P4C 2XYWW SOT23-3 Tape&Reel mm 1 The following characters could be different and means: X =Assembly site code Y =Year WW =Work Week 7

8 Package Information SOT23-3 SYMBOL MM INCH MM INCH SYMBOL MIN MAX MIN MAX MIN MAX MIN MAX A E A E A e 0.950(BSC) 0.037(BSC) b e c L D θ ALL DIMENSIONS REFER TO JEDEC STANDARD DO NOT INCLUDE MOLD FLASH OR PROTRUSIONS 8

9 Customer Service Worldwide Sales and Service: Technical Support: Investor Relations Contacts: Marcom Contact: Editorial Contact: HR Contact: Legal Contact: Shen Zhen RUICHIPS Semiconductor CO., LTD Room 501, the 5floor An Tong Industrial Building, NO.207 Mei Hua Road Fu Tian Area Shen Zhen City, CHINA TEL: (86-755) FAX: (86-755)