N-Channel Power MOSFET 150V, 1.4A, 480mΩ
|
|
- Dustin Gaines
- 5 years ago
- Views:
Transcription
1 TSM48N5CX6 N-Channel Power MOSFET 5V,.4A, 48mΩ FEATURES Low R DS(ON) to minimize conductive losses Low gate charge for fast power switching Compliant to RoHS directive /65/EU and in accordance to WEEE /96/EC Halogen-free according to IEC KEY PERFORMANCE PARAMETERS PARAMETER VALUE UNIT V DS 5 V R DS(on) (max) V GS = V 48 V GS = 6V 5 mω Q g 8 nc APPLICATIONS Battery Management System LED Lighting SOT-6 Note: MSL 3 (Moisture Sensitivity Level) per J-STD- ABSOLUTE MAXIMUM RATINGS (T A = 5 C unless otherwise noted) PARAMETER SYMBOL LIMIT UNIT Drain-Source Voltage V DS 5 V Gate-Source Voltage V GS ± V Continuous Drain Current (Note ) T C = 5 C.4 I D T A = 5 C. A Pulsed Drain Current I DM 5.6 A Total Power Dissipation Total Power Dissipation T C = 5 C P D. T C = 5 C.4 T A = 5 C P D.5 T A = 5 C.3 Operating Junction and Storage Temperature Range T J, T STG - 55 to +5 C W W THERMAL PERFORMANCE PARAMETER SYMBOL LIMIT UNIT Junction to Case Thermal Resistance R ӨJC 59 C/W Junction to Ambient Thermal Resistance R ӨJA 83 C/W Thermal Performance Note: R ӨJA is the sum of the junction-to-case and case-to-ambient thermal resistances. The casethermal reference is defined at the solder mounting surface of the drain pins. R ӨJA is guaranteed by design while R ӨCA is determined by the user s board design. Version: A74
2 TSM48N5CX6 ELECTRICAL SPECIFICATIONS (T A = 5 C unless otherwise noted) PARAMETER CONDITIONS SYMBOL MIN TYP MAX UNIT Static Drain-Source Breakdown Voltage V GS = V, I D = 5µA BV DSS V Gate Threshold Voltage V GS = V DS, I D = 5µA V GS(TH) V Gate Threshold Voltage Temperature Coefficient I D = 5µA mv/ C Gate-Source Leakage Current V GS = ±V, V DS = V I GSS ± na Drain-Source Leakage Current Drain-Source On-State Resistance (Note ) V GS = V, V DS = 5V V GS = V, V DS = 5V T J = 5 C V GS = V, I D =.A I DSS R DS(on) V GS = 6V, I D =.A Forward Transconductance (Note ) V DS = 5V, I D =.A g fs S (Note 3) Dynamic Total Gate Charge V GS = V, V DS = V, I D =.A Q g Total Gate Charge Q g V GS = 6V, V DS = V, Gate-Source Charge Q gs I D =.A Gate-Drain Charge Q gd Input Capacitance C iss V GS = V, V DS = V Output Capacitance C oss f =.MHz Reverse Transfer Capacitance C rss Gate Resistance f =.MHz R g Ω Switching (Note 3) Turn-On Delay Time t d(on) Turn-On Rise Time V GS = V, V DS = V, t r Turn-Off Delay Time I D =.A, R G = Ω, t d(off) Turn-Off Fall Time t f Source-Drain Diode Forward Voltage (Note ) V GS = V, I S =.A V SD V Reverse Recovery Time I S =.A, t rr ns Reverse Recovery Charge di/dt = A/μs Q rr nc Notes:. Silicon limited current only.. Pulse test: Pulse Width 3µs, duty cycle %. 3. Switching time is essentially independent of operating temperature. ORDERING INFORMATION µa mω nc pf ns PART NO. PACKAGE PACKING TSM48N5CX6 RFG SOT-6 3,pcs / 7 Reel Version: A74
3 (Normalized) ID, Drain Current (A) ID, Drain Current (A) TSM48N5CX6 CHARACTERISTICS CURVES (T A = 5 C unless otherwise noted) V GS =V V GS =9V V GS =8V V GS =7V V GS =6V Output Characteristics V GS =5.5V Transfer Characteristics 5 V GS =5V V DS, Drain to Source Voltage (V) V GS, Gate to Source Voltage (V) RDS(ON), Drain-Source On-Resistance (Ω) On-Resistance vs. Drain Current V GS =6V V GS =V I D, Drain Current (A) VGS, Gate to Source Voltage (V) Gate-Source Voltage vs. Gate Charge V DS =75V I D =.A Q g, Gate Charge (nc) RDS(on), Drain-Source On-Resistance On-Resistance vs. Junction Temperature V GS =V I D =.A T J, Junction Temperature ( C) RDS(on), Drain-Source On-Resistance (Ω) On-Resistance vs. Gate-Source Voltage I D =.A V GS, Gate to Source Voltage (V) 3 Version: A74
4 ID, Drain Current (A) IS, Reverse Drain Current (A) C, Capacitance (pf) Drain-Source Breakdown Voltage TSM48N5CX6 CHARACTERISTICS CURVES (T A = 5 C unless otherwise noted) Capacitance vs. Drain-Source Voltage BV DSS vs. Junction Temperature 6. 5 I D =ma 4 3 CRSS CISS BVDSS (Normalized)..9 COSS V DS, Drain to Source Voltage (V) T J, Junction Temperature ( C) Maximum Safe Operating Area, Junction-to-Case Source-Drain Diode Forward Current vs. Voltage R DS(ON) SINGLE PULSE R Ө C =59 C/W T C =5 C.. V DS, Drain to Source Voltage (V) V SD, Body Diode Forward Voltage (V) Normalized Thermal Transient Impedance, Junction-to-Case Normalized Effective Transient Thermal Impedance, ZӨJC.. Duty=.5 Duty=. Duty=. Duty=.5 Duty=. Duty=. Single..... t, Square Wave Pulse Duration (sec) SINGLE PULSE R Ө C =59 C/W Notes: Duty = t / t T J = T C + P DM x Z Ө C x R Ө C 4 Version: A74
5 TSM48N5CX6 PACKAGE OUTLINE DIMENSIONS (Unit: Millimeters) SOT-6 SUGGESTED PAD LAYOUT (Unit: Millimeters) MARKING DIAGRAM 48 = Device Code Y = Year Code 48YML M = Month Code O =Jan P =Feb Q =Mar R =Apr S =May T =Jun U =Jul V =Aug W =Sep X =Oct Y =Nov Z =Dec L = Lot Code 5 Version: A74
6 TSM48N5CX6 Notice Specifications of the products displayed herein are subject to change without notice. TSC or anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies. Information contained herein is intended to provide a product description only. No license, express or implied, to any intellectual property rights is granted by this document. Except as provided in C s terms and conditions of sale for such products, TSC assumes no liability whatsoever, and disclaims any express or implied warranty, relating to sale and/or use of TSC products including liability or warranties relating to fitness for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications. Customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify TSC for any damages resulting from such improper use or sale. 6 Version: A74
7 Mouser Electronics Authorized Distributor Click to View Pricing, Inventory, Delivery & Lifecycle Information: : TSM48N5CX6 RFG
N-Channel Power MOSFET 30V, 78A, 3.8mΩ
TSM38N3PQ33 N-Channel Power MOSFET 3V, 78A, 3.8mΩ FEATURES Low R DS(ON) to minimize conductive losses Low gate charge for fast power switching % UIS and R g tested Compliant to RoHS directive 2/65/EU and
More informationN-Channel Power MOSFET 150V, 9A, 65mΩ
TSM65N5CS N-Channel Power MOSFET 5V, 9A, 65mΩ FEATURES Low R DS(ON) to minimize conductive losses Low gate charge for fast power switching % UIS and R g tested Compliant to RoHS directive 2/65/EU and in
More informationN-Channel Power MOSFET 40V, 135A, 3.8mΩ
TSM38N4LCP N-Channel Power MOSFET 4V, 35A, 3.8mΩ FEATURES Low R DS(ON) to minimize conductive losses Logic level Low gate charge for fast power switching % UIS and R g tested Compliant to RoHS directive
More informationP-Channel Power MOSFET -40V, -22A, 15mΩ
TSM5P4LCS P-Channel Power MOSFET -4V, -22A, 5mΩ FEATURES Low R DS(ON) to minimize conductive losses Logic level Low gate charge for fast power switching % UIS and R g tested Compliant to RoHS directive
More informationN-Channel Power MOSFET 60V, 70A, 12mΩ
TSM2N6LCP N-Channel Power MOSFET 6V, 7A, 2mΩ FEATURES Low R DS(ON) to minimize conductive losses Logic level Low gate charge for fast power switching % UIS and R g tested Compliant to RoHS directive 2/65/EU
More informationN-Channel Power MOSFET 30V, 185A, 1.8mΩ
TSM8NA3CR N-Channel Power MOSFET 3V, 85A,.8mΩ FEATURES Low R DS(ON) to minimize conductive losses Low gate charge for fast power switching % UIS and R g tested Compliant to RoHS directive 2/65/EU and in
More informationN-Channel Power MOSFET 100V, 46A, 16mΩ
TSM6NLCR N-Channel Power MOSFET V, 46A, 6mΩ FEATURES Low R DS(ON) to minimize conductive losses Logic level Low gate charge for fast power switching % UIS and R g tested Compliant to RoHS directive 2/65/EU
More informationN- and P-Channel 60V (D-S) Power MOSFET
TSM652CR N- and P-Channel 6V (D-S) Power MOSFET FEATURES Low R DS(ON) to minimize conductive losses Low gate charge for fast power switching % UIS and R g tested Compliant to RoHS directive 2/65/EU and
More informationN-Channel Power MOSFET 40V, 121A, 3.3mΩ
TSM33NB4LCR N-Channel Power MOSFET 4V, 2A, 3.3mΩ FEATURES Low R DS(ON) to minimize conductive losses Logic level Low gate charge for fast power switching % UIS and R g tested. 75 C Operating Junction Temperature
More informationN-Channel Power MOSFET 900V, 4A, 4.0Ω
N-Channel Power MOSFET 900V, 4A, 4.0Ω FEATURES Low R DS(ON) 4Ω (Max.) Low gate charge typical @ 25nC (Typ.) Improve dv/dt capability APPLICATION High efficiency switch mode power Supply Lighting KEY PERFORMANCE
More informationN-Channel Power MOSFET 100V, 160A, 5.5mΩ
N-Channel Power MOSFET 100V, 160A, 5.5mΩ FEATURES Advanced Trench Technology Low R DS(ON) 5.5mΩ (Max.) Low gate charge typical @ 154nC (Typ.) Low Crss typical @ 260pF (Typ.) KEY PERFORMANCE PARAMETERS
More informationN-Channel Power MOSFET 800V, 0.3A, 21.6Ω
N-Channel Power MOSFET 800V, 0.3A, 21.6Ω FEATURES Advanced planar process 100% avalanche tested Fast switching APPLICATION Power Supply Lighting KEY PERFORMANCE PARAMETERS PARAMETER VALUE UNIT V DS 800
More informationDual N-Channel MOSFET 30V, 20A, 20mΩ
Dual N-Channel MOSFET 30V, 20A, 20mΩ FEATURES Fast switching 100% avalanche tested Pb-free plating RoHS compliant Halogen-free package APPLICATION Power Supply Motor COntrol KEY PERFORMANCE PARAMETERS
More informationDual P-Channel MOSFET -60V, -12A, 68mΩ
Dual P-Channel MOSFET -60V, -12A, 68mΩ FEATURES Fast switching Low thermal resistance package Low profile package Pb-free plating RoHS compliant Halogen-free package KEY PERFORMANCE PARAMETERS PARAMETER
More informationN-Channel Power MOSFET 40V, 3.9A, 45mΩ
N-Channel Power MOSFET 40V, 3.9A, 45mΩ FEATURES Advance Trench Process Technology High density cell design for Ultra Low On-resistance Pb-free plating Compliant to RoHS Directive 2011/65/EU and in accordance
More informationN-Channel Power MOSFET 500V, 9A, 0.9Ω
TSM9ND5CI N-Channel Power MOSFET 5V, 9A,.9Ω FEATURES % UIS and Rg tested Advanced planar process Compliant to RoHS Directive /65/EU and in accordance to WEEE /96/EC Halogen-free according to IEC 649--
More informationN-Channel Power MOSFET 100V, 81A, 10mΩ
N-Channel Power MOSFET 100V, 81A, 10mΩ FEATURES Advanced Trench Technology 100% avalanche tested APPLICATION Synchronous Rectification in SMPS High Speed Power Switching KEY PERFORMANCE PARAMETERS PARAMETER
More informationN-Channel Power MOSFET 600V, 1A, 10Ω
N-Channel Power MOSFET 600V, 1A, 10Ω FEATURES Advanced planar process 100% avalanche tested Low R DS(ON) 8Ω (Typ.) Low gate charge typical @ 6.1 nc (Typ.) Low Crss typical @4.2pF (Typ.) KEY PERFORMANCE
More informationDual N-Channel MOSFET 30V, 20A, 20mΩ
Dual N-Channel MOSFET 30V, 20A, 20mΩ FEATURES Fast switching 100% avalanche tested Pb-free plating Compliant to RoHS directive 2011/65/EU and in accordance to WEEE 2002/96/EC Halogen-free according to
More informationN-Channel Power MOSFET 600V, 18A, 0.19Ω
N-Channel Power MOSFET 600V, 18A, 0.19Ω FEATURES Super-Junction technology High performance, small R DS(ON) *Q g figure of merit (FOM) High ruggedness performance 100% UIS & R g tested High commutation
More informationN-Channel Power MOSFET 60V, 38A, 17mΩ
N-Channel Power MOSFET 60V, 38A, 17mΩ FEATURES 100% avalanche tested Suitable for 5V drive applications Pb-free plating RoHS compliant Halogen-free mold compound APPLICATION SMPS Synchronous Rectification
More informationN-Channel Power MOSFET 700V, 11A, 0.38Ω
N-Channel Power MOSFET 700V, 11A, 0.38Ω FEATURES Super-Junction technology High performance due to small figure-of-merit High ruggedness performance High commutation performance APPLICATION Power Supply
More informationTSM2307CX 30V P-Channel MOSFET
SOT-23 Pin Definition: 1. Gate 2. Source 3. Drain Key Parameter Performance Parameter Value Unit V DS -30 V V GS = -10V 95 R DS(on) (max) mω V GS = -4.5V 140 Q g 10 nc Features Advance Trench Process Technology
More informationTSM V P-Channel MOSFET
SOT-26 Pin Definition: 1. Drain 6. Drain 2. Drain 5, Drain 3. Gate 4. Source PRODUCT SUMMARY V DS (V) R DSON (mω) I D (A) 20 60 @ VGS = -4.5V -4.7 100 @ VGS = -2.5V -3.8 Features Advance Trench Process
More informationN-Channel Power MOSFET 600V, 18A, 0.19Ω
N-Channel Power MOSFET 600V, 18A, 0.19Ω FEATURES Super-Junction technology High performance, small R DS(ON) *Q g figure of merit (FOM) High ruggedness performance 100% UIS tested High commutation performance
More informationTSM V N-Channel MOSFET
SOT-23 Pin Definition: 1. Gate 2. Source 3. Drain Key Parameter Performance Parameter Value Unit V DS 20 V V GS = 4.5V 33 R DS(on) (max) V GS = 2.5V 40 V GS = 1.8V 51 mω Q g 11 nc Features Advance Trench
More informationN-Channel Power MOSFET 600V, 11A, 0.38Ω
N-Channel Power MOSFET 600V, 11A, 0.38Ω FEATURES Super-Junction technology High performance due to small figure-of-merit High ruggedness performance High commutation performance Pb-free plating Compliant
More informationTSM V N-Channel MOSFET
SOT-23 Pin Definition: 1. Gate 2. Source 3. Drain PRODUCT SUMMARY V DS (V) R DS(on) (mω) I D (A) 60 156 @ V GS = 10V 3 192 @ V GS = 4.5V 2.1 Features Advance Trench Process Technology High Density Cell
More informationNot Recommended. TSM V N-Channel MOSFET. PRODUCT SUMMARY V DS (V) R DS(on) (mω) I D (A) Features. Block Diagram. Application
SOT-23 Pin Definition: 1. Gate 2. Source 3. Drain PRODUCT SUMMARY V DS (V) R DS(on) (mω) I D (A) 30 @ V GS = 10V 5.8 30 43 @ V GS = 4.5V 5.0 Features Advance Trench Process Technology High Density Cell
More informationTSM V P-Channel MOSFET
SOT-23 Pin Definition: 1. Gate 2. Source 3. Drain PRODUCT SUMMARY V DS (V) R DS(on) (mω) I D (A) 55 @ V GS =-4.5V -3.2-20 80 @ V GS =-2.5V -2.7 130 @ V GS =-1.8V -2.0 Features Advance Trench Process Technology
More informationTSM V P-Channel MOSFET
SOT-23 Pin Definition: 1. Gate 2. Source 3. Drain PRODUCT SUMMARY V DS (V) R DS(on) (mω) I D (A) 39 @ V GS = -4.5V -4.7-20 52 @ V GS = -2.5V -4.1 68 @ V GS = -1.8V -2.0 Features Advance Trench Process
More informationTSM6866SD 20V Dual N-Channel MOSFET
TSSOP-8 Pin Definition: 1. Drain 1 8. Drain 2 2. Source 1 7. Source 2 3. Source 1 6. Source 2 4. Gate 1 5. Gate 2 PRODUCT SUMMARY V DS (V) R DS(on) (mω) I D (A) 30 @ V GS = 4.5V 6.0 20 40 @ V GS = 2.5V
More informationNot Recommended. TSM V P-Channel MOSFET. PRODUCT SUMMARY V DS (V) R DS(on) (mω) I D (A) Features. Block Diagram. Application
SOP-8 Pin Definition: 1. Source 8. Drain 2. Source 7. Drain 3. Source 6. Drain 4. Gate 5. Drain PRODUCT SUMMARY V DS (V) R DS(on) (mω) I D (A) 14 @ V GS = -10V -11-30 20 @ V GS = -4.5V -8.5 Features Advance
More informationTSM V P-Channel MOSFET
SOT-26 Pin Definition: 1. Drain 6. Drain 2. Drain 5, Drain 3. Gate 4. Source PRODUCT SUMMARY V DS (V) R DS(on) (mω) I D (A) 48 @ V GS = -10V -5.3-30 79 @ V GS = -4.5V -4.1 Features Advance Trench Process
More informationTSM6N50 500V N-Channel Power MOSFET
ITO-220 TO-252 (DPAK) Features Low R DS(ON) 1.4Ω (Max.) TO-251 (IPAK) Low gate charge typical @ 25nC (Typ.) Low Crss typical @ 15pF (Typ.) Fast Switching Ordering Information Part No. Package Packing TSM6N50CI
More informationN-Channel Power MOSFET 600V, 0.5A, 10Ω
N-Channel Power MOSFET 6V,.5A, Ω FEATURES % Avalanche Tested Pb-free plating Compliant to RoHS Directive 2/65/EU and in accordance to WEE 22/96/EC Halogen-free according to IEC 6249-2-2 KEY PERFORMANCE
More informationTSM4936D 30V N-Channel MOSFET
SOP-8 Pin Definition: 1. Source 1 8. Drain 1 2. Gate 1 7. Drain 1 3. Source 2 6. Drain 2 4. Gate 2 5. Drain 2 PRODUCT SUMMARY V DS (V) R DS(on) (mω) I D (A) 36 @ V GS = 10V 5.9 30 53 @ V GS = 4.5V 4.9
More informationTSM650P03CX 30V P-Channel Power MOSFET
SOT-23 Pin Definition: 1. Gate 2. Source 3. Drain Key Parameter Performance Parameter Value Unit V DS -30 V V GS =- 10V 65 R DS(on) (max) V GS = -4.5V 75 V GS = -2.5V 100 mω Q g 8 nc Features Fast Switching
More informationTSM V P-Channel Power MOSFET
SOT-23 Pin Definition: 1. Gate 2. Source 3. Drain Key Parameter Performance Parameter Value Unit V DS -60 V R DS(on) (max) V GS = -10V 190 V GS = -4.5V 240 mω Q g 8.2 nc Ordering Information Block Diagram
More informationTSM3N90 900V N-Channel Power MOSFET
TO-220 ITO-220 PRODUCT SUMMARY Pin Definition: 1. Gate 2. Drain 3. Source V DS (V) R DS(on) (Ω) I D (A) 900 5.1 @ V GS =10V 1.25 TO-251 (IPAK) TO-252 (DPAK) General Description The TSM3N90 N-Channel Power
More informationNPN Silicon Planar High Voltage Transistor
NPN Silicon Planar High Voltage Transistor FEATURES High BV CEO, BV CBO High current gain Compliant to RoHS Directive 2011/65/EU and in accordance to WEEE 2002/96/EC Halogen-Free according to IEC 61249-2-21
More informationTSM900N06 60V N-Channel Power MOSFET
TO-251S (IPAK SL) TO-252 (DPAK) Pin Definition: 1. Gate 2. Drain 3. Source Key Parameter Performance Parameter Value Unit V DS 60 V R DS(on) (max) V GS = 10V 90 V GS = 4.5V 100 mω SOT-223 Q g 9.3 nc Ordering
More informationN-Channel 100-V (D-S) 175 C MOSFET
N-Channel -V (D-S) 75 C MOSFET SUP/SUB85N- PRODUCT SUMMARY V (BR)DSS (V) r DS(on) (Ω) (A).5 at V GS = V.2 at V GS = 4.5 V 85 a FEATURES TrenchFET Power MOSFET 75 C Maximum Junction Temperature Available
More information3-Terminal 500mA Positive Voltage Regulator
3-Terminal 500mA Positive Voltage Regulator DESCRIPTION The TS78M00 Series positive voltage regulators are identical to the popular TS7800 Series devices, except that they are specified for only half the
More informationP-Channel 20 V (D-S) MOSFET
Si30CDS P-Channel 0 V (D-S) MOSFET MOSFET PRODUCT SUMMARY V DS (V) R DS(on) ( ) I D (A) a Q g (Typ.) - 0 0. at V GS = - 4.5 V - 3. 0.4 at V GS = -.5 V -.7 3.3 nc TO-36 (SOT-3) FEATURES Halogen-free According
More informationTSM340N06CI C0G TSM340N06CZ C0G Not Recommended
TO-220 ITO-220 Key Parameter Performance Pin Definition: 1. Gate 2. Drain 3. Source R DS(on) (max) Parameter Value Unit V DS 60 V V GS = 10V 34 V GS = 4.5V 40 mω TO-251S (IPAK) TO-252 (DPAK) Q g 16.6 nc
More informationTSM480P06CI C0G TSM480P06CZ C0G Not Recommended
TO-220 ITO-220 Key Parameter Performance Pin Definition: 1. Gate 2. Drain 3. Source R DS(on) (max) Parameter Value Unit V DS -60 V V GS = -10V 48 V GS = -4.5V 65 mω TO-251S (IPAK) TO-252 (DPAK) Q g 22.4
More informationN-Channel 30-V (D-S) MOSFET
SiDS N-Channel -V (D-S) MOSFET PRODUCT SUMMARY V DS (V) R DS(on) (Ω) I D (A) Q g (Typ.).68 at V GS =. V.6 a nc.8 at V GS =. V. TO-6 (SOT-) FEATURES Halogen-free According to IEC 69-- Definition TrenchFET
More informationTSM1N60L 600V N-Channel Power MOSFET
TO-252 TO-251 Pin Definition: 1. Gate 2. Drain 3. Source PRODUCT SUMMARY V DS (V) R DS(on) (Ω) I D (A) 600 12 @ V GS =10V 1 General Description The TSM1N60L is used an advanced termination scheme to provide
More informationTSM V P-Channel MOSFET
SOT-23 Pin Definition: 1. Gate 2. Source 3. Drain PRODUCT SUMMARY V DS (V) R DS(on) (mω) I D (A) 55 @ V GS = -4.5V -4.0-20 85 @ V GS = -2.5V -2.5 Features Advance Trench Process Technology High Density
More informationTSM2N60E 600V, 2A, 4Ω N-Channel Power MOSFET
TO-251 (IPAK) TO-252 (DPAK) Pin Definition: 1. Gate 2. Drain 3. Source Key Parameter Performance Parameter Value Unit V DS 600 V R DS(on) (max) 4 Ω Qg (typ) 9.5 nc Features 100% Avalanche Tested G-S ESD
More informationFeatures. Bottom View. Top View Bottom View
YM ADVANCED INFORMATION 2V N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary BV DSS 2V Description R DS(ON) max I D max T A = +25 C 25mΩ @ V GS = 4.5V 6.5A 31mΩ @ V GS = 2.5V 5.9A 6mΩ @ V GS = 1.8V 4.5A
More informationN-Channel 20 V (D-S) MOSFET
SiCDS N-Channel V (D-S) MOSFET PRODUCT SUMMARY V DS (V) R DS(on) (Ω) I D (A) e Q g (Typ.).8 at V GS = 4. V 6 a.6 at V GS =. V 6 a 8.8 nc.44 at V GS =.8 V.6 FEATURES Halogen-free According to IEC 649--
More informationDual P-Channel 2.5-V (G-S) MOSFET
Dual P-Channel.5-V (G-S) MOSFET PRODUCT SUMMARY V DS (V) R DS(on) (Ω) I D (A).6 at V GS = -.5 V -.7 -. at V GS = -.5 V - 3.7 FEATURES Halogen-free According to IEC 69-- Definition Compliant to RoHS Directive
More informationTSM V N-Channel MOSFET w/esd Protected
SOP-8 Pin Definition: 1. Source 2. Source 3. Source 4. Gate 5, 6, 7, 8. Drain PRODUCT SUMMARY V DS (V) R DS(on) (mω) I D (A) 25 @ V GS = 4.5V 4.5 20 30 @ V GS = 2.5V 3.5 65 @ V GS = 1.8V 2.0 Features Advance
More informationP-Channel 2.5-V (G-S) MOSFET
Si33BDV P-Channel.5-V (G-S) MOSFET PRODUCT SUMMARY V DS (V) R DS(on) (Ω) I D (A).6 at V GS = -.5 V -.7 -.9 at V GS = -.7 V - 3.8. at V GS = -.5 V - 3.7 FEATURES Halogen-free According to IEC 69-- Definition
More informationSPECIFICATIONS (T J = 25 C, unless otherwise noted)
N-Channel V (D-S) MOSFET PRODUCT SUMMARY V DS (V) R DS(on) ( ) I D (A) a, e Q g (Typ.). at V GS = V at V GS = 4.5 V nc DFN 3x3 EP Top View Bottom View Pin Top View FEATURES APPLICATIONS D 3 4 8 7 5 G Pin
More informationPreliminary TSM9N50 500V N-Channel Power MOSFET
TO-220 ITO-220 Pin Definition: 1. Gate 2. Drain 3. Source PRODUCT SUMMARY V DS (V) R DS(on) (Ω) I D (A) 500 0.85 @ V GS =10V 4.8 General Description The TSM9N50 N-Channel enhancement mode Power MOSFET
More informationSingle-Stage PFC Buck Current Control LED Driver With High Voltage MOSFET Integrated
Single-Stage PFC Buck Current Control LED Driver With High Voltage MOSFET Integrated DESCRIPTION TS19721D a very efficient constant current controller for driving LED lamps in non-dimmable lighting applications.
More informationP-Channel 40 V (D-S), 175 C MOSFET
P-Channel 4 V (D-S), 75 C MOSFET SUD5P4-9L PRODUCT SUMMARY V DS (V) R DS(on) (Ω) (A) d.94 at V GS = - V - 5-4.45 at V GS = - 4.5 V - 5 FEATURES TrenchFET Power MOSFETs 75 C Junction Temperature Compliant
More informationN-Channel 60 V (D-S), 175 C MOSFET, Logic Level
N-Channel 6 V (D-S), 75 C MOSFET, Logic Level SUD23N6-3L PRODUCT SUMMARY V DS (V) r DS(on) (Ω) I D (A) a.3 at V GS = V 23 6.45 at V GS = 4.5 V 9.5 FEATURES TrenchFET Power MOSFET 75 C Junction Temperature
More informationN-Channel 40-V (D-S), 175 C MOSFET
N-Channel 4-V (D-S), 75 C MOSFET SUD5N4-9H PRODUCT SUMMARY V (BR)DSS (V) r DS(on) (Ω) (A) c Q g (Typ) 4.9 at V GS = V 5 55 FEATURES TrenchFET Power MOSFETS 75 C Junction Temperature High Threshold Voltage
More informationDual N-Channel 20-V (D-S) MOSFET
Si99CDY Dual N-Channel -V (D-S) MOSFET PRODUCT SUMMARY V DS (V) R DS(on) (Ω) I D (A) a Q g (Typ.). at V GS =.5 V. at V GS =.5 V nc SO- FEATURES Halogen-free According to IEC 9-- Definition TrenchFET Power
More informationP-Channel 100 V (D-S) MOSFET
SUD9P-95 P-Channel V (D-S) MOSFET PRODUCT SUMMARY V DS (V) (Ω) I D (A) Q g (Typ.).95 at V GS = - V - 8.8 -.7.2 at V GS = - 4.5 V - 8.5 FEATURES Halogen-free According to IEC 6249-2-2 Definition TrenchFET
More informationDual P-Channel 20-V (D-S) MOSFET
New Product Dual P-Channel 2-V (D-S) MOSFET Si93CDY PRODUCT SUMMARY V DS (V) R DS(on) (Ω) I D (A) a, e Q g (Typ.) - 2.92 at V GS = - V - 8.33 at V GS = -.5 V - 8 2 SO-8 S 8 D G 2 7 D FEATURES Halogen-free
More informationP-Channel 8 V (D-S) MOSFET
Si9DS P-Channel 8 V (D-S) MOSFET MOSFET PRODUCT SUMMARY V DS (V) R DS(on) ( ) I D (A) a Q g (Typ.) - 8. at V GS = - 4.5 V - 6 e.6 at V GS = -.5 V - 6 e.48 at V GS = -.8 V - 5.9.68 at V GS = -.5 V - 5.
More informationTSM V N-Channel MOSFET
SOT-23 Pin Definition: 1. Gate 2. Source 3. Drain PRODUCT SUMMARY V DS (V) R DS(on) (mω) I D (A) 33 @ V GS = 4.5V 4.9 20 40 @ V GS = 2.5V 4.4 100 @ V GS = 1.8V 2.9 Features Advance Trench Process Technology
More informationDual P-Channel 40 V (D-S) MOSFET
Dual P-Channel V (D-S) MOSFET PRODUCT SUMMARY V DS (V) R DS(on) ( ) I D (A) d Q g (Typ.) -.27 at V GS = - V - 8.3 at V GS = -.5 V - 7.2 2.7 nc SO-8 S 8 D G 2 7 D S 2 3 D 2 G 2 5 D 2 FEATURES Halogen-free
More informationNPN Silicon Planar High Voltage Transistor
NPN Silicon Planar High Voltage Transistor FEATURES High BV CEO, BV CBO High current gain Compliant to RoHS Directive 2011/65/EU and in accordance to WEEE 2002/96/EC Halogen-Free according to IEC 61249-2-21
More informationN- and P-Channel 30 V (D-S) MOSFET
N- and P-Channel 3 V (D-S) MOSFET PRODUCT SUMMARY V DS (V) R DS(on) ( ) I D (A) a Q g (Typ.) N-Channel 3.47 at V GS = V 6..65 at V GS = 4.5 V 5.2 2.75 P-Channel - 3.89 at V GS = - V - 4.3.4 at V GS = -
More informationN-Channel 60 V (D-S), MOSFET
N-Channel 6 V (D-S), MOSFET PRODUCT SUMMARY V DS (V) R DS(on) ( ) I D (A) a Q g (Typ.).3 at V GS = V 9. 6 6.5 nc.45 at V GS = 4.5 V 7.6 FEATURES Halogen-free According to IEC 6249-2-2 Definition TrenchFET
More informationDual P-Channel 60-V (D-S) 175 MOSFET
Dual P-Channel 6-V (D-S) 75 MOSFET PRODUCT SUMMARY V DS (V) R DS(on) (Ω) I D (A).2 at V GS = - V - 3. - 6.5 at V GS = - 4.5 V - 2.8 FEATURES Halogen-free According to IEC 6249-2-2 Definition TrenchFET
More informationN-Channel 30-V (D-S) MOSFET
Si6BDS N-Channel -V (D-S) MOSFET PRODUCT SUMMARY V DS (V) R DS(on) (Ω) I D (A) a Q g (Typ).5 at V GS = V 4.5.8 at V GS = 4.5 V.4.6 nc FEATURES Halogen-free According to IEC 649-- Definition TrenchFET Power
More informationN-Channel 20 V (D-S) MOSFET
Si3DDS N-Channel V (D-S) MOSFET PRODUCT SUMMARY V DS (V) R DS(on) (Ω) Max. I D (A) Q g (Typ.).57 at V GS =.5 V.9 3.5.75 at V GS =.5 V.6 FEATURES Halogen-free According to IEC 69-- Definition TrenchFET
More informationDual P-Channel 12-V (D-S) MOSFET
Dual P-Channel -V (D-S) MOSFET PRODUCT SUMMARY V DS (V) R DS(on) (Ω) I D (A) Q g (Typ.) -. at V GS = -.5 V -.5 a.5 nc. at V GS = -.5 V -.5 a. at V GS = -.8 V - 3.5 PowerPAK SC-7- Dual FEATURES Halogen-free
More informationP-Channel 1.8 V (G-S) MOSFET
Si7DL P-Channel. V (G-S) MOSFET PRODUCT SUMMARY V DS (V) R DS(on) (Ω) I D (A).9 at V GS = -.5 V ±.9 -.5 at V GS = -.5 V ±.7.5 at V GS = -. V ±. FEATURES Halogen-free According to IEC 9-- Definition TrenchFET
More informationFeatures. U-DFN (Type F) Pin Out Bottom View
YM 3V N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features BV DSS 3V R DS(ON) Max 9mΩ @ 25mΩ @ V GS = 2.5V 4mΩ @ V GS =.8V 2mΩ @ V GS =.5V I D Max T C = +25 C 5A 4A A 6A.6mm Profile Ideal for Low
More informationN- and P-Channel 20 V (D-S) MOSFET
N- and P-Channel V (D-S) MOSFET DTS5 PRODUCT SUMMARY V DS (V) R DS(on) (Ω) I D (A) N-Channel 99 at V GS = 4.5 V..4 at V GS =.5 V.9 P-Channel - 89 at V GS = - 4.5 V -.5 73 at V GS = -.5 V -.4 FEATURES Halogen-free
More informationDual P-Channel 30-V (D-S) MOSFET
Dual P-Channel 3-V (D-S) MOSFET PRODUCT SUMMARY V DS (V) R DS(on) (Ω) I D (A).25 at V GS = - V - 7. - 3.4 at V GS = - 4.5 V - 5.5 FEATURES Halogen-free According to IEC 6249-2-2 Definition TrenchFET Power
More informationTSM70N V, 6A, 0.75Ω N-Channel Power MOSFET
TO-252 (DPAK) TO-251 (IPAK) Pin Definition: 1. Gate 2. Drain 3. Source Key Parameter Performance Parameter Value Unit V DS 700 V R DS(on) (max) 0.75 Ω Q g 10.7 nc Features Block Diagram Super-Junction
More informationDual N-Channel 30 V (D-S) MOSFET
Si59BDC Dual N-Channel V (D-S) MOSFET PRODUCT SUMMARY V DS (V) R DS(on) (Ω) I D (A) Q g (Typ.) 6-8 ChipFET (Dual).65 at V GS = V a nc. at V GS =.5 V a S FEATURES Halogen-free According to IEC 69-- Definition
More informationI D T A = 25 C -2.8A -2.3A. Part Number Case Packaging DMG6602SVT-7 TSOT / Tape & Reel
DMGSVT COMPLEMENTARY PAIR ENHANCEMENT MODE MOSFET Product Summary Features and Benefits Device V (BR)DSS R DS(on) Q 3V Q -3V I D mω @ V GS = V 3.A mω @ V GS =.5V.7A 95mΩ @ V GS = -V mω @ V GS = -.5V Description
More informationDual N-Channel 30 V (D-S) MOSFET
Dual N-Channel 3 V (D-S) MOSFET PRODUCT SUMMARY V DS (V) R DS(on) ( ) I D (A) Q g (Typ.) 3. at V GS = V 2..7 at V GS =.5 V 5. nc SO-8 S 8 D G 2 7 D FEATURES Halogen-free According to IEC 29-2-2 Definition
More informationComplementary 20 V (D-S) MOSFET
SiDL Complementary V (D-S) MOSFET PRODUCT SUMMARY V DS (V) R DS(on) (Ω) I D (A) Q g (Typ.).9 at V GS =. V. N-Channel.7 at V GS =.7 V..7. at V GS =. V..99 at V GS = -. V -. P-Channel -.6 at V GS = -.7 V
More informationPPJW3P10A. 100V P-Channel Enhancement Mode MOSFET. Voltage -100 V Current -2.6 A. Features. Mechanical Data
100V P-Channel Enhancement Mode MOSFET Voltage -100 V Current -2.6 A Features SOT-223 R DS(ON), V GS @-10V,I D @-2.6A
More informationP-Channel 8-V (D-S) MOSFET
New Product P-Channel 8-V (D-S) MOSFET Si25ADS PRODUCT SUMMARY V DS (V) R DS(on) (Ω) I D (A) Q g (Typ.).4 at V GS = - 4.5 V - 4. - 8.6 at V GS = - 2.5 V -.4 7.8 nc.88 at V GS = -.8 V - 2. FEATURES Halogen-free
More informationP-Channel 20-V (D-S) MOSFET
Si33DS P-Channel 0-V (D-S) MOSFET PRODUCT SUMMARY V DS (V) R DS(on) (Ω) I D (A) 0.039 at V GS = - 4.5 V - 4.7-0 0.05 at V GS = -.5 V - 4. 0.068 at V GS = -.8 V - 3.5 FEATURES Halogen-free According to
More informationN-Channel 30-V (D-S) MOSFET
N-Channel -V (D-S) MOSFET DTS4 PRODUCT SUMMARY V DS (V) R DS(on) (Ω) I D (A) a Q g (Typ.).58 at V GS = V.6.7 at V GS = 4.5 V.6 TO-6 (SOT-). nc FEATURES Halogen-free According to IEC 649-- Definition TrenchFET
More informationDual N-Channel 30-V (D-S) MOSFET with Schottky Diode
Si483CDY Dual N-Channel 3-V (D-S) MOSFET with Schottky Diode PRODUCT SUMMARY V DS (V) R DS(on) (Ω) I D (A) a, e Q g (Typ.) Channel- 3 Channel-2 3.2 at V GS = V 8..25 at V GS = 4.5 V 8..2 at V GS = V 8..25
More informationP-Channel 100-V (D-S) 175 C MOSFET
P-Channel -V (D-S) 75 C MOSFET SUD5P-43L PRODUCT SUMMARY V DS (V) R DS(on) (Ω) I D (A) a Q g (Typ.).43 at V GS = - V - 37-54 nc.48 at V GS = - 4.5 V - 35 FEATURES TrenchFET Power MOSFET Compliant to RoHS
More informationDual P-Channel 20-V (D-S) MOSFET
New Product Dual P-Channel 2-V (D-S) MOSFET Si9933CDY PRODUCT SUMMARY V DS (V) R DS(on) (Ω) I D (A) a, e Q g (Typ.).58 at V GS = -.5 V - - 2 8.9 at V GS = - 2.5 V - FEATURES Halogen-free Option Available
More informationN- and P-Channel 30-V (D-S) MOSFET
N- and P-Channel -V (D-S) MOSFET PRODUCT SUMMARY V DS (V) (Ω) I D (A) N-Channel.3 at V GS = V 5.9.53 at V GS = 4.5 V 4.9 P-Channel -.53 at V GS = - V - 4.9.9 at V GS = - 4.5 V - 3.7 FEATURES Halogen-free
More informationN-Channel 0 V (D-S) MOSFET
N-Channel V (D-S) MOSFET 66SJ PRODUCT SUMMARY V DS (V) R DS(on) () I D (A) a, e Q g (Typ.).6 at V GS = V 53 4 nc.9 at V GS = 4.5 V 4 FEATURES TrenchFET II Power MOSFET % R g and UIS Tested APPLICATIONS
More informationFEATURES. Parameter Symbol Limit Unit Gate-Source Voltage V GS ± 20 V. 85 a Pulsed Drain Current I DM 600
DTU5N6 N-Channel 6 V (D-S) MOSFET PRODUCT SUMMARY V DS (V) R DS(on) ( ) I D (A) a.25 at V GS = V 5 6.5 at V GS = 4.5 V 75 FEATURES TrenchFET II Power MOSFET TO-252 D G D S Top View S N-Channel MOSFET ABSOLUTE
More informationP-Channel 30-V (D-S), MOSFET
SUD5P3- P-Channel 3-V (D-S), MOSFET PRODUCT SUMMARY V DS (V) R DS(on) (Ω) (A) a. at V GS = - V - 5-3.8 at V GS = -.5 V - 2 FEATURES TrenchFET Power MOSFETs RoHS COMPLIANT S TO-252 G Drain Connected to
More informationN-Channel 12 V (D-S) MOSFET
N-Channel 2 V (D-S) MOSFET SiUD42ED.4 mm PowerPAK 86 Single D 3 FEATURES TrenchFET power MOSFET Ultra small.8 mm x.6 mm outline Ultra thin.4 mm max. height Typical ESD protection 5 V (HBM).8 mm Top View.6mm
More informationN-Channel 30-V (D-S) MOSFET
Si36BDS N-Channel 3-V (D-S) MOSFET PRODUCT SUMMARY V DS (V) R DS(on) (Ω) I D (A) Q g (Typ.).7 at V GS = V. 3 3..65 at V GS =.5 V 3.5 FEATURES Halogen-free Option Available TrenchFET Power MOSFET % R g
More informationN-Channel 100 V (D-S) MOSFET
N-Channel V (D-S) MOSFET PRODUCT SUMMARY V DS (V) R DS(on) () I D (A) a, e Q g (Typ.).88 at V GS = V 3 nc.95 at V GS =7.5 V DFN 3x3 EP Top View Bottom View Pin Top View FEATURES TrenchFET Power MOSFET
More informationPARAMETER SYMBOL LIMIT UNITS
20V P-Channel Enhancement Mode MOSFET Voltage -20 V Current -4.0A Features RDS(ON), VGS@-4.5V, ID@-4.0A
More informationDual N-Channel 60-V (D-S) MOSFET
Dual N-Channel -V (D-S) MOSFET PRODUCT SUMMARY V DS (V) R DS(on) (Ω) I D (A) Q g (Typ.).38 at V GS = V 7..3 at V GS =. V.8 9. nc SO-8 FEATURES Halogen-free According to IEC 9-- Definition TrenchFET Power
More information