TSM340N06CI C0G TSM340N06CZ C0G Not Recommended
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1 TO-220 ITO-220 Key Parameter Performance Pin Definition: 1. Gate 2. Drain 3. Source R DS(on) (max) Parameter Value Unit V DS 60 V V GS = 10V 34 V GS = 4.5V 40 mω TO-251S (IPAK) TO-252 (DPAK) Q g 16.6 nc Ordering Information Part No. Package Packing ITO pcs / Tube TO pcs / Tube TSM340N06CH X0G TO-251S 75pcs / Tube TSM340N06CP ROG TO kpcs / 13 Reel Note: G denotes for Halogen- and Antimony-free as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds Absolute Maximum Ratings (Tc = 25 C unless otherwise noted) Parameter Block Diagram N-Channel MOSFET Limit Symbol Unit IPAK/DPAK ITO-220 TO-220 Drain-Source Voltage V DS 60 V Gate-Source Voltage V GS ±20 V Tc = 25 C 30 A Continuous Drain Current (Note 1) I D Tc = 100 C 19 A Pulsed Drain Current (Note 2) I DM 120 A Single Pulse Avalanche Energy (Note 3) E AS 24 mj Single Pulse Avalanche Current (Note 2) I AS 22 A Total Power T C = 25 C P D W Operating Junction Temperature T J 150 C Storage Temperature Range T STG -55 to +150 C 1/9 Version: D14
2 Thermal Performance Parameter Symbol Limit IPAK/DPAK ITO-220 TO-220 Unit Thermal Resistance - Junction to Case R ӨJC C/W Thermal Resistance - Junction to Ambient R ӨJA 62 C/W (Note 4,5) Electrical Specifications (T C = 25 unless otherwise noted) Parameter Conditions Symbol Min Typ Max Unit Static Drain-Source Breakdown Voltage V GS = 0V, I D = 250µA BV DSS V Drain-Source On-State Resistance V GS = 10V, I D = 15A R DS(ON) V GS = 4.5V, I D = 10A mω Gate Threshold Voltage V DS = V GS, I D = 250µA V GS(TH) V Zero Gate Voltage Drain Current V DS = 60V, V GS = 0V I DSS V DS = 48V, T J = 125 C µa Gate Body Leakage V GS = ±20V, V DS = 0V I GSS ±100 na Forward Transconductance V DS = 10V, I D = 8A g fs S Dynamic Total Gate Charge (Note 4,5) Q g V DS = 30V, I D = 20A, Gate-Source Charge (Note 4,5) Q gs V GS = 10V Gate-Drain Charge (Note 4,5) Q gd nc Input Capacitance C iss V DS = 30V, V GS = 0V, Output Capacitance C oss f = 1MHz Reverse Transfer Capacitance C rss pf Gate Resistance V GS =0V, V DS =0V, f=1mhz R g Ω Switching Turn-On Delay Time t d(on) Turn-On Rise Time (Note 4,5) V DD=30V, V GS=10V, t r Turn-Off Delay Time (Note 4,5) R G =6Ω, I D =-1A t d(off) ns Turn-Off Fall Time (Note 4,5) t f Source-Drain Diode Ratings and Characteristic Continuous Drain-Source Diode I S A V G=V D=0V, Force Current Pulse Drain-Source Diode I SM A Diode-Source Forward Voltage V GS = 0V, I S = 1A V SD V (Note 4) Reverse Recovery Time V GS = 0V, I S = 1A t rr ns Reverse Recovery Charge (Note 4) di F /dt = 100A/µs Q rr nc Note: 1. Limited by maximum junction temperature 2. Pulse width limited by safe operating area 3. L = 0.1mH, I AS = 22A, V DD = 50V, R G = 25Ω, Starting T J = 25 C 4. Pulse test: pulse width 300µs, duty cycle 2% 5. Switching time is essentially independent of operating temperature. 2/9 Version: D14
3 Electrical Characteristics Curve Continuous Drain Current vs. Tc Normalized RDSON vs. T J Normalized Gate Threshold Voltage T C, Case Temperature ( C) Normalized V th vs. T J T J, Junction Temperature ( C) T J, Junction Temperature ( C) Gate Charge Waveform Normalized Transient Impedance (ITO-220) Maximum Safe Operation Area (ITO-220) Normalized On Resistance (mω) VGS, Gate to Source Voltage (V) Qg, Gate Charge (nc) Normalized Thermal Response (RθJC) Square Wave Pulse Duration (s) V DS, Drain to Source Voltage (V) 3/9 Version: D14
4 Electrical Characteristics Curve Normalized Transient Impedance (TO-220) Maximum Safe Operation Area (TO-220) Normalized Thermal Response (RθJC) Normalized Thermal Response (RθJC) Square Wave Pulse Duration (s) Normalized Transient Impedance (TO-251S) Square Wave Pulse Duration (s) V DS, Drain to Source Voltage (V) Maximum Safe Operation Area (TO-251S) V DS, Drain to Source Voltage (V) Normalized Transient Impedance (TO-252) Maximum Safe Operation Area (TO-252) Normalized Thermal Response (RθJC) Square Wave Pulse Duration (s) V DS, Drain to Source Voltage (V) 4/9 Version: D14
5 TO-220 Mechanical Drawing Marking Diagram G = Halogen Free Y = Year Code WW = Week Code (01~52) F = Factory Code Unit: Millimeters 5/9 Version: D14
6 ITO-220 Mechanical Drawing Marking Diagram G = Halogen Free Y = Year Code WW = Week Code (01~52) F = Factory Code Unit: Millimeters 6/9 Version: D14
7 TO-251S Mechanical Drawing Marking Diagram Unit: Millimeters Y = Year Code M = Month Code for Halogen Free Product (O=Jan, P=Feb, Q=Mar, R=Apl, S=May, T=Jun, U=Jul, V=Aug, W=Sep, X=Oct, Y=Nov, Z=Dec) L = Lot Code 7/9 Version: D14
8 TO-252 Mechanical Drawing Marking Diagram Unit: Millimeters Y = Year Code M = Month Code for Halogen Free Product (O=Jan, P=Feb, Q=Mar, R=Apl, S=May, T=Jun, U=Jul, V=Aug, W=Sep, X=Oct, Y=Nov, Z=Dec) L = Lot Code 8/9 Version: D14
9 Notice Specifications of the products displayed herein are subject to change without notice. TSC or anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies. Information contained herein is intended to provide a product description only. No license, express or implied, to any intellectual property rights is granted by this document. Except as provided in TSC s terms and conditions of sale for such products, TSC assumes no liability whatsoever, and disclaims any express or implied warranty, relating to sale and/or use of TSC products including liability or warranties relating to fitness for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications. Customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify TSC for any damages resulting from such improper use or sale. 9/9 Version: D14
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N-Channel V (D-S) MOSFET SUDN-5L-GE PRODUCT SUMMARY V DS (V) R DS(on) ( ) I D (A) Q g (Typ). at V GS = V.5.7.5 at V GS = 4.5 V FEATURES TrenchFET Power MOSFETs Material categorization: For definitions
More informationMDV1545 Single N-Channel Trench MOSFET 30V
General Description The MDV1545 uses advanced MagnaChip s MOSFET Technology, which provides high performance in on-state resistance, fast switching performance and excellent quality. MDV1545 is suitable
More informationMDD1902 Single N-channel Trench MOSFET 100V, 40A, 28mΩ
MDD192 Single N-Channel Trench MOSFET V MDD192 Single N-channel Trench MOSFET V, 4A, 28mΩ General Description Features The MDD192 uses advanced MagnaChip s MOSFET Technology, which provides high performance
More informationUNISONIC TECHNOLOGIES CO., LTD
UNISONIC TECHNOLOGIES CO., LTD 6A, 6V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 6N6 is N-channel enhancement mode power field effect transistors with stable off-state characteristics, fast switching speed,
More informationN-Channel 150-V (D-S) MOSFET
N-Channel 5-V (D-S) MOSFET PRODUCT SUMMARY V (BR)DSS (V) R DS(on) (Ω) I D (A) Q g (Typ.) 5.8 at V GS = V 75 d 64 FEATURES TrenchFET Power MOSFET % R g and UIS Tested APPLICATIONS Primary Side Switch Power
More informationFeatures. Symbol Parameter Rating Units V DS Drain-Source Voltage 20 V V GS Gate-Source Voltage ±10 V
General Description These N-Channel enhancement mode power field effect transistors are using trench DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance,
More information2N65 650V N-Channel Power MOSFET
R S E M I C O N D U C T O R FEATURES RDS(ON)< 4. 4Ω @VGS=1V, ID= 1A Fast switching capability Lead free in compliance with EU RoHS directive. Improved dv/ dt capability, high ruggedness MECHANICAL DATA
More informationMDF11N60 N-Channel MOSFET 600V, 11 A, 0.55Ω
General Description MDF11N6 is suitable device for SMPS, high Speed switching and general purpose applications. MDF11N6 N-Channel MOSFET 6V, 11 A,.55Ω Features = 6V = 11A @ V GS = V R DS(ON).55Ω @ V GS
More information650V N-Channel MOSFET
TMA12N65H, TMP12N65H 650V N-Channel MOSFET FEATURES Fast switching 100% avalanche tested Improved dv/dt capability APPLICATIONS Switch Mode Power Supply (SMPS) Uninterruptible Power Supply (UPS) Power
More informationCharacteristics Symbol Rating Unit. T C=70 o C 53.0 T A=25 o C 22.8 (3) T A=70 o C 18.2 (3) Pulsed Drain Current I DM 100 A 46.2 T C=70 o C 29.6.
General Description The MDU1514 uses advanced MagnaChip s MOSFET Technology, which provides high performance in on-state resistance, fast switching performance and excellent quality. MDU1514 is suitable
More informationCharacteristics Symbol Rating Unit
General Description MDS1525 Single N-channel Trench MOSFET 3V, 16.9A, 1.1mΩ The MDS1525 uses advanced MagnaChip s MOSFET Technology, which provides high performance in on-state resistance, fast switching
More informationCharacteristics Symbol Rating Unit. T C=70 o C 36.6 T A=25 o C 20.4 (3) T A=70 o C 16.3 (3) Pulsed Drain Current I DM 100 A 31.2 T C=70 o C 20.0.
General Description The MDD152 uses advanced MagnaChip s MOSFET Technology, which provides high performance in on-state resistance, fast switching performance and excellent quality. MDD152 is suitable
More informationFeatures. Symbol Parameter Rating Units V DS Drain-Source Voltage 60 V V GS Gate-Source Voltage ±20 V
General Description These N-Channel enhancement mode power field effect transistors are using trench DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance,
More informationFeatures. Symbol Parameter Rating Units V DS Drain-Source Voltage V V GS Gate-Source Voltage ±8 ±8 V
General Description These N+P dual Channel enhancement mode power field effect transistors are using trench DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance,
More informationMDE10N026RH Single N-channel Trench MOSFET 100V, 120A, 2.6mΩ
General Description MDE1N26RH Single N-channel Trench MOSFET V, 12A, 2.6mΩ The MDE1N26 uses advanced MagnaChip s MOSFET Technology, which provides high performance in on-state resistance, fast switching
More informationUNISONIC TECHNOLOGIES CO., LTD
UNISONIC TECHNOLOGIES CO., LTD 60 Amps, 60 Volts N-CHANNEL POWER MOSFET DESCRIPTION The UTC 60N06 is n-channel enhancement mode power field effect transistors with stable off-state characteristics, fast
More informationN-Channel 30 V (D-S) MOSFET
N-Channel 3 V (D-S) MOSFET SUD5N3-12P-GE3 PRODUCT SUMMARY V DS (V) R DS(on) (Ω) I D (A) a.12 at V GS = 1 V 16.8 3.175 at V GS = 4.5 V 13.9 FEATURES TrenchFET power MOSFET 1 % R g and UIS tested Material
More informationMDU1516 Single N-channel Trench MOSFET 30V, 47.6A, 9.0mΩ
MDU1516 Single N-Channel Trench MOSFET 3V MDU1516 Single N-channel Trench MOSFET 3V, 7.6A, 9.mΩ General Description Features The MDU1516 uses advanced MagnaChip s MOSFET Technology, which provides high
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2V N-Channel MOSFET TMA18N2H,TMP18N2H FEATURES Fast switching 1% avalanche tested Improved dv/dt capability APPLICATIONS Switch Mode Power Supply (SMPS) Uninterruptible Power Supply (UPS) Power Factor
More informationN-Channel 100-V (D-S) 175 C MOSFET
N-Channel -V (D-S) 75 C MOSFET SUD4N-25 PRODUCT SUMMARY V DS (V) R DS(on) (Ω) I D (A).25 at V GS = V 4.28 at V GS = 4.5 V 38 FEATURES TrenchFET Power MOSFET 75 C Maximum Junction Temperature % R g Tested
More informationMDF11N60 N-Channel MOSFET 600V, 11A, 0.55Ω
MDF11N6 N-channel MOSFET 6V MDF11N6 N-Channel MOSFET 6V, 11A,.55Ω General Description The MDF11N6 uses advanced MagnaChip s MOSFET Technology, which provides low on-state resistance, high switching performance
More informationN-Channel 100-V (D-S) 175 C MOSFET
N-Channel -V (D-S) 75 C MOSFET SUDN-5L PRODUCT SUMMARY V DS (V) r DS(on) ( ) (A) Q g (Typ). @ V GS = V.5.5 @ V GS =.5 V. 7.7 TO-5 D Drain Connected to Tab G G D S Order Number: Top View SUDN-5L SUDN-5L
More informationMDI5N40/MDD5N40 N-Channel MOSFET 400V, 3.4 A, 1.6Ω
General Description The MDI5N / MDD5N use advanced Magnachip s MOSFET Technology, which provides low on-state resistance, high switching performance and excellent quality. MDI5N is suitable device for
More informationGP2M020A050H GP2M020A050F
Features Low gate charge 1% avalanche tested Improved dv/dt capability RoHS compliant Halogen free package JEDEC Qualification GP2M2A5H N-channel MOSFET BS R DS(on) 5V 18A
More informationAutomotive N-Channel 60 V (D-S) 175 C MOSFET
Automotive N-Channel 6 V (D-S) 75 C MOSFET TO-263 7-Lead D S FEATURES TrenchFET power MOSFET Package with low thermal resistance % R g and UIS tested AEC-Q qualified Material categorization: for definitions
More informationSMPS MOSFET. Storage Temperature Range Soldering Temperature, for 10 seconds 300. C (1.6mm from case )
SMPS MOSFET PD - 9444A IRFP22N60K HEXFET Power MOSFET Applications V l Hard Switching Primary or PFS Switch DSS R DS(on) typ. I D l Switch Mode Power Supply (SMPS) 600V 240mΩ 22A l Uninterruptible Power
More informationDual P-Channel 2.5-V (G-S) MOSFET
Dual P-Channel.5-V (G-S) MOSFET PRODUCT SUMMARY V DS (V) R DS(on) (Ω) I D (A).6 at V GS = -.5 V -.7 -. at V GS = -.5 V - 3.7 FEATURES Halogen-free According to IEC 69-- Definition Compliant to RoHS Directive
More informationTO-220F MDF Series S. Characteristics Symbol Rating Unit Drain-Source Voltage V DSS 650 V Gate-Source Voltage V GSS ±30 V.
General Description These N-channel MOSFET are produced using advanced MagnaChip s MOSFET Technology, which provides low onstate resistance, high switching performance and excellent quality. These devices
More informationMDD4N25 N-Channel MOSFET 250V, 3.0A, 1.75Ω
MDDN5 N-Channel MOSFET 5V, 3.A,.75Ω General Description The MDDN5 uses advanced Magnachip s MOSFET Technology, which provides low on-state resistance, high switching performance and excellent quality.
More informationN-Channel 0 V (D-S) MOSFET
N-Channel V (D-S) MOSFET 66SJ PRODUCT SUMMARY V DS (V) R DS(on) () I D (A) a, e Q g (Typ.).6 at V GS = V 53 4 nc.9 at V GS = 4.5 V 4 FEATURES TrenchFET II Power MOSFET % R g and UIS Tested APPLICATIONS
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