TSM V N-Channel MOSFET w/esd Protected

Size: px
Start display at page:

Download "TSM V N-Channel MOSFET w/esd Protected"

Transcription

1 SOP-8 Pin Definition: 1. Source 2. Source 3. Source 4. Gate 5, 6, 7, 8. Drain PRODUCT SUMMARY V DS (V) R DS(on) (mω) I D (A) V GS = 4.5V V GS = 2.5V 3.5 V GS = 1.8V 2.0 Features Advance Trench Process Technology High Density Cell Design for Ultra Low On-resistance ESD Protect 2KV Application Specially Designed for Li-on Battery Packs Battery Switch Application Ordering Information Part No. Package Packing TSM7401CS RL SOP-8 2.5Kpcs / 13 Reel Block Diagram N-Channel MOSFET Absolute Maximum Rating (Ta = 25 o C unless otherwise noted) Parameter Symbol Limit Unit Drain-Source Voltage V DS 20 V Gate-Source Voltage V GS ±12 V Continuous Drain Current I D 8 A Pulsed Drain Current I DM 30 A Continuous Source Current (Diode Conduction) a,b I S 1.4 A Maximum Power Dissipation Ta = 25 o C 2.5 Ta = 75 o C Operating Junction Temperature T J +150 Operating Junction and Storage Temperature Range T J, T STG -55 to +150 Thermal Performance Parameter Symbol Limit Unit Junction to Case Thermal Resistance RӨ JF 30 Junction to Ambient Thermal Resistance (PCB mounted) RӨ JA 50 Notes: a. Pulse width limited by the Maximum junction temperature b. Surface Mounted on FR4 Board, t 5 sec. P D 1.3 W o C o C o C/W o C/W 1/6 Version: C07

2 Electrical Specifications (Ta = 25 o C unless otherwise noted) Parameter Conditions Symbol Min Typ Max Unit Static Drain-Source Breakdown Voltage V GS = 0V, I D = 250uA BV DSS V Gate Threshold Voltage V DS = V GS, I D = 250uA V GS(TH) V Gate Body Leakage V GS = ±12V, V DS = 0V I GSS ±10 ua Zero Gate Voltage Drain Current V DS = 16V, V GS = 0V I DSS ua On-State Drain Current V DS =5V, V GS = 4.5V I D(ON) A Drain-Source On-State Resistance V GS = 4.5V, I D = 4.5A V GS = 2.5V, I D = 3.5A V GS = 1.8V, I D = 2.0A R DS(ON) Forward Transconductance V DS = 10V, I D = 4.5A g fs S Diode Forward Voltage I S = 2A, V GS = 0V V SD V Dynamic b Total Gate Charge Q g V DS = 10V, I D = 4.5A, Gate-Source Charge Q gs V GS = 4.5V Gate-Drain Charge Q gd Input Capacitance C iss V DS = 10V, V GS = 0V, Output Capacitance C oss f = 1.0MHz Reverse Transfer Capacitance C rss Switching c Turn-On Delay Time t d(on) V DD = 10V, R L = 10Ω, Turn-On Rise Time t r I D = 1A, V GEN = 4.5V, Turn-Off Delay Time t d(off) R G = 6Ω Turn-Off Fall Time t f Notes: a. pulse test: PW 300µS, duty cycle 2% b. For DESIGN AID ONLY, not subject to production testing. b. Switching time is essentially independent of operating temperature. mω nc pf ns 2/6 Version: C07

3 Electrical Characteristics Curve (Ta = 25 o C, unless otherwise noted) Output Characteristics Transfer Characteristics On-Resistance vs. Drain Current Gate Charge On-Resistance vs. Junction Temperature Source-Drain Diode Forward Voltage 3/6 Version: C07

4 Electrical Characteristics Curve (Ta = 25 o C, unless otherwise noted) On-Resistance vs. Gate-Source Voltage Threshold Voltage Single Pulse Power Normalized Thermal Transient Impedance, Junction-to-Ambient 4/6 Version: C07

5 SOP-8 Mechanical Drawing SOP-8 DIMENSION DIM MILLIMETERS INCHES MIN MAX MIN MAX. A B C D F G 1.27BSC 0.05BSC K M 0º 7º 0º 7º P R Marking Diagram Y = Year Code M = Month Code (A=Jan, B=Feb, C=Mar, D=Apl, E=May, F=Jun, G=Jul, H=Aug, I=Sep, J=Oct, K=Nov, L=Dec) L = Lot Code 5/6 Version: C07

6 Notice Specifications of the products displayed herein are subject to change without notice. TSC or anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies. Information contained herein is intended to provide a product description only. No license, express or implied, to any intellectual property rights is granted by this document. Except as provided in TSC s terms and conditions of sale for such products, TSC assumes no liability whatsoever, and disclaims any express or implied warranty, relating to sale and/or use of TSC products including liability or warranties relating to fitness for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications. Customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify TSC for any damages resulting from such improper use or sale. 6/6 Version: C07

TSM4946D 60V Dual N-Channel MOSFET

TSM4946D 60V Dual N-Channel MOSFET SOP-8 Pin Definition: 1. Source 1 8. Drain 1 2. Gate 1 7. Drain 1 3. Source 2 6. Drain 2 4. Gate 2 5. Drain 2 PRODUCT SUMMARY V DS (V) R DS(on) (mω) I D (A) 55 @ V GS = 10V 4.5 60 75 @ V GS = 4.5V 3.9

More information

TSM V N-Channel MOSFET

TSM V N-Channel MOSFET SOT-23 Pin Definition: 1. Gate 2. Source 3. Drain PRODUCT SUMMARY V DS (V) R DS(on) (mω) I D (A) 33 @ V GS = 4.5V 4.9 20 40 @ V GS = 2.5V 4.4 100 @ V GS = 1.8V 2.9 Features Advance Trench Process Technology

More information

TSM V P-Channel MOSFET

TSM V P-Channel MOSFET SOT-23 Pin Definition: 1. Gate 2. Source 3. Drain PRODUCT SUMMARY V DS (V) R DS(on) (mω) I D (A) 55 @ V GS = -4.5V -4.0-20 85 @ V GS = -2.5V -2.5 Features Advance Trench Process Technology High Density

More information

TSM1N60L 600V N-Channel Power MOSFET

TSM1N60L 600V N-Channel Power MOSFET TO-252 TO-251 Pin Definition: 1. Gate 2. Drain 3. Source PRODUCT SUMMARY V DS (V) R DS(on) (Ω) I D (A) 600 12 @ V GS =10V 1 General Description The TSM1N60L is used an advanced termination scheme to provide

More information

TSM4936D 30V N-Channel MOSFET

TSM4936D 30V N-Channel MOSFET SOP-8 Pin Definition: 1. Source 1 8. Drain 1 2. Gate 1 7. Drain 1 3. Source 2 6. Drain 2 4. Gate 2 5. Drain 2 PRODUCT SUMMARY V DS (V) R DS(on) (mω) I D (A) 36 @ V GS = 10V 5.9 30 53 @ V GS = 4.5V 4.9

More information

Not Recommended. TSM V N-Channel MOSFET. PRODUCT SUMMARY V DS (V) R DS(on) (mω) I D (A) Features. Block Diagram. Application

Not Recommended. TSM V N-Channel MOSFET. PRODUCT SUMMARY V DS (V) R DS(on) (mω) I D (A) Features. Block Diagram. Application SOT-23 Pin Definition: 1. Gate 2. Source 3. Drain PRODUCT SUMMARY V DS (V) R DS(on) (mω) I D (A) 30 @ V GS = 10V 5.8 30 43 @ V GS = 4.5V 5.0 Features Advance Trench Process Technology High Density Cell

More information

TSM6866SD 20V Dual N-Channel MOSFET

TSM6866SD 20V Dual N-Channel MOSFET TSSOP-8 Pin Definition: 1. Drain 1 8. Drain 2 2. Source 1 7. Source 2 3. Source 1 6. Source 2 4. Gate 1 5. Gate 2 PRODUCT SUMMARY V DS (V) R DS(on) (mω) I D (A) 30 @ V GS = 4.5V 6.0 20 40 @ V GS = 2.5V

More information

TSM V P-Channel MOSFET

TSM V P-Channel MOSFET SOT-23 Pin Definition: 1. Gate 2. Source 3. Drain PRODUCT SUMMARY V DS (V) R DS(on) (mω) I D (A) 39 @ V GS = -4.5V -4.7-20 52 @ V GS = -2.5V -4.1 68 @ V GS = -1.8V -2.0 Features Advance Trench Process

More information

TSM V P-Channel MOSFET

TSM V P-Channel MOSFET SOT-26 Pin Definition: 1. Drain 6. Drain 2. Drain 5, Drain 3. Gate 4. Source PRODUCT SUMMARY V DS (V) R DS(on) (mω) I D (A) 48 @ V GS = -10V -5.3-30 79 @ V GS = -4.5V -4.1 Features Advance Trench Process

More information

TSM V N-Channel MOSFET

TSM V N-Channel MOSFET SOT-23 Pin Definition: 1. Gate 2. Source 3. Drain PRODUCT SUMMARY V DS (V) R DS(on) (mω) I D (A) 60 156 @ V GS = 10V 3 192 @ V GS = 4.5V 2.1 Features Advance Trench Process Technology High Density Cell

More information

TSM V P-Channel MOSFET

TSM V P-Channel MOSFET SOT-23 Pin Definition: 1. Gate 2. Source 3. Drain PRODUCT SUMMARY V DS (V) R DS(on) (mω) I D (A) 55 @ V GS =-4.5V -3.2-20 80 @ V GS =-2.5V -2.7 130 @ V GS =-1.8V -2.0 Features Advance Trench Process Technology

More information

TSM V P-Channel MOSFET

TSM V P-Channel MOSFET SOT-26 Pin Definition: 1. Drain 6. Drain 2. Drain 5, Drain 3. Gate 4. Source PRODUCT SUMMARY V DS (V) R DSON (mω) I D (A) 20 60 @ VGS = -4.5V -4.7 100 @ VGS = -2.5V -3.8 Features Advance Trench Process

More information

Not Recommended. TSM V P-Channel MOSFET. PRODUCT SUMMARY V DS (V) R DS(on) (mω) I D (A) Features. Block Diagram. Application

Not Recommended. TSM V P-Channel MOSFET. PRODUCT SUMMARY V DS (V) R DS(on) (mω) I D (A) Features. Block Diagram. Application SOP-8 Pin Definition: 1. Source 8. Drain 2. Source 7. Drain 3. Source 6. Drain 4. Gate 5. Drain PRODUCT SUMMARY V DS (V) R DS(on) (mω) I D (A) 14 @ V GS = -10V -11-30 20 @ V GS = -4.5V -8.5 Features Advance

More information

TSM V N-Channel MOSFET

TSM V N-Channel MOSFET SOT-23 Pin Definition: 1. Gate 2. Source 3. Drain Key Parameter Performance Parameter Value Unit V DS 20 V V GS = 4.5V 33 R DS(on) (max) V GS = 2.5V 40 V GS = 1.8V 51 mω Q g 11 nc Features Advance Trench

More information

TSM2307CX 30V P-Channel MOSFET

TSM2307CX 30V P-Channel MOSFET SOT-23 Pin Definition: 1. Gate 2. Source 3. Drain Key Parameter Performance Parameter Value Unit V DS -30 V V GS = -10V 95 R DS(on) (max) mω V GS = -4.5V 140 Q g 10 nc Features Advance Trench Process Technology

More information

Preliminary TSM9N50 500V N-Channel Power MOSFET

Preliminary TSM9N50 500V N-Channel Power MOSFET TO-220 ITO-220 Pin Definition: 1. Gate 2. Drain 3. Source PRODUCT SUMMARY V DS (V) R DS(on) (Ω) I D (A) 500 0.85 @ V GS =10V 4.8 General Description The TSM9N50 N-Channel enhancement mode Power MOSFET

More information

N-Channel Power MOSFET 600V, 0.5A, 10Ω

N-Channel Power MOSFET 600V, 0.5A, 10Ω N-Channel Power MOSFET 6V,.5A, Ω FEATURES % Avalanche Tested Pb-free plating Compliant to RoHS Directive 2/65/EU and in accordance to WEE 22/96/EC Halogen-free according to IEC 6249-2-2 KEY PERFORMANCE

More information

N-Channel Power MOSFET 40V, 3.9A, 45mΩ

N-Channel Power MOSFET 40V, 3.9A, 45mΩ N-Channel Power MOSFET 40V, 3.9A, 45mΩ FEATURES Advance Trench Process Technology High density cell design for Ultra Low On-resistance Pb-free plating Compliant to RoHS Directive 2011/65/EU and in accordance

More information

N-Channel Power MOSFET 100V, 160A, 5.5mΩ

N-Channel Power MOSFET 100V, 160A, 5.5mΩ N-Channel Power MOSFET 100V, 160A, 5.5mΩ FEATURES Advanced Trench Technology Low R DS(ON) 5.5mΩ (Max.) Low gate charge typical @ 154nC (Typ.) Low Crss typical @ 260pF (Typ.) KEY PERFORMANCE PARAMETERS

More information

N-Channel Power MOSFET 100V, 81A, 10mΩ

N-Channel Power MOSFET 100V, 81A, 10mΩ N-Channel Power MOSFET 100V, 81A, 10mΩ FEATURES Advanced Trench Technology 100% avalanche tested APPLICATION Synchronous Rectification in SMPS High Speed Power Switching KEY PERFORMANCE PARAMETERS PARAMETER

More information

N-Channel Power MOSFET 600V, 11A, 0.38Ω

N-Channel Power MOSFET 600V, 11A, 0.38Ω N-Channel Power MOSFET 600V, 11A, 0.38Ω FEATURES Super-Junction technology High performance due to small figure-of-merit High ruggedness performance High commutation performance Pb-free plating Compliant

More information

TSM650P03CX 30V P-Channel Power MOSFET

TSM650P03CX 30V P-Channel Power MOSFET SOT-23 Pin Definition: 1. Gate 2. Source 3. Drain Key Parameter Performance Parameter Value Unit V DS -30 V V GS =- 10V 65 R DS(on) (max) V GS = -4.5V 75 V GS = -2.5V 100 mω Q g 8 nc Features Fast Switching

More information

Dual P-Channel MOSFET -60V, -12A, 68mΩ

Dual P-Channel MOSFET -60V, -12A, 68mΩ Dual P-Channel MOSFET -60V, -12A, 68mΩ FEATURES Fast switching Low thermal resistance package Low profile package Pb-free plating RoHS compliant Halogen-free package KEY PERFORMANCE PARAMETERS PARAMETER

More information

N-Channel Power MOSFET 800V, 0.3A, 21.6Ω

N-Channel Power MOSFET 800V, 0.3A, 21.6Ω N-Channel Power MOSFET 800V, 0.3A, 21.6Ω FEATURES Advanced planar process 100% avalanche tested Fast switching APPLICATION Power Supply Lighting KEY PERFORMANCE PARAMETERS PARAMETER VALUE UNIT V DS 800

More information

Dual N-Channel MOSFET 30V, 20A, 20mΩ

Dual N-Channel MOSFET 30V, 20A, 20mΩ Dual N-Channel MOSFET 30V, 20A, 20mΩ FEATURES Fast switching 100% avalanche tested Pb-free plating Compliant to RoHS directive 2011/65/EU and in accordance to WEEE 2002/96/EC Halogen-free according to

More information

TSM V P-Channel Power MOSFET

TSM V P-Channel Power MOSFET SOT-23 Pin Definition: 1. Gate 2. Source 3. Drain Key Parameter Performance Parameter Value Unit V DS -60 V R DS(on) (max) V GS = -10V 190 V GS = -4.5V 240 mω Q g 8.2 nc Ordering Information Block Diagram

More information

Dual N-Channel MOSFET 30V, 20A, 20mΩ

Dual N-Channel MOSFET 30V, 20A, 20mΩ Dual N-Channel MOSFET 30V, 20A, 20mΩ FEATURES Fast switching 100% avalanche tested Pb-free plating RoHS compliant Halogen-free package APPLICATION Power Supply Motor COntrol KEY PERFORMANCE PARAMETERS

More information

TSM3N90 900V N-Channel Power MOSFET

TSM3N90 900V N-Channel Power MOSFET TO-220 ITO-220 PRODUCT SUMMARY Pin Definition: 1. Gate 2. Drain 3. Source V DS (V) R DS(on) (Ω) I D (A) 900 5.1 @ V GS =10V 1.25 TO-251 (IPAK) TO-252 (DPAK) General Description The TSM3N90 N-Channel Power

More information

TSM6N50 500V N-Channel Power MOSFET

TSM6N50 500V N-Channel Power MOSFET ITO-220 TO-252 (DPAK) Features Low R DS(ON) 1.4Ω (Max.) TO-251 (IPAK) Low gate charge typical @ 25nC (Typ.) Low Crss typical @ 15pF (Typ.) Fast Switching Ordering Information Part No. Package Packing TSM6N50CI

More information

N-Channel Power MOSFET 600V, 18A, 0.19Ω

N-Channel Power MOSFET 600V, 18A, 0.19Ω N-Channel Power MOSFET 600V, 18A, 0.19Ω FEATURES Super-Junction technology High performance, small R DS(ON) *Q g figure of merit (FOM) High ruggedness performance 100% UIS tested High commutation performance

More information

N-Channel Power MOSFET 30V, 185A, 1.8mΩ

N-Channel Power MOSFET 30V, 185A, 1.8mΩ TSM8NA3CR N-Channel Power MOSFET 3V, 85A,.8mΩ FEATURES Low R DS(ON) to minimize conductive losses Low gate charge for fast power switching % UIS and R g tested Compliant to RoHS directive 2/65/EU and in

More information

N-Channel Power MOSFET 600V, 18A, 0.19Ω

N-Channel Power MOSFET 600V, 18A, 0.19Ω N-Channel Power MOSFET 600V, 18A, 0.19Ω FEATURES Super-Junction technology High performance, small R DS(ON) *Q g figure of merit (FOM) High ruggedness performance 100% UIS & R g tested High commutation

More information

N-Channel Power MOSFET 900V, 4A, 4.0Ω

N-Channel Power MOSFET 900V, 4A, 4.0Ω N-Channel Power MOSFET 900V, 4A, 4.0Ω FEATURES Low R DS(ON) 4Ω (Max.) Low gate charge typical @ 25nC (Typ.) Improve dv/dt capability APPLICATION High efficiency switch mode power Supply Lighting KEY PERFORMANCE

More information

N-Channel Power MOSFET 500V, 9A, 0.9Ω

N-Channel Power MOSFET 500V, 9A, 0.9Ω TSM9ND5CI N-Channel Power MOSFET 5V, 9A,.9Ω FEATURES % UIS and Rg tested Advanced planar process Compliant to RoHS Directive /65/EU and in accordance to WEEE /96/EC Halogen-free according to IEC 649--

More information

N-Channel Power MOSFET 100V, 46A, 16mΩ

N-Channel Power MOSFET 100V, 46A, 16mΩ TSM6NLCR N-Channel Power MOSFET V, 46A, 6mΩ FEATURES Low R DS(ON) to minimize conductive losses Logic level Low gate charge for fast power switching % UIS and R g tested Compliant to RoHS directive 2/65/EU

More information

N-Channel Power MOSFET 30V, 78A, 3.8mΩ

N-Channel Power MOSFET 30V, 78A, 3.8mΩ TSM38N3PQ33 N-Channel Power MOSFET 3V, 78A, 3.8mΩ FEATURES Low R DS(ON) to minimize conductive losses Low gate charge for fast power switching % UIS and R g tested Compliant to RoHS directive 2/65/EU and

More information

N-Channel Power MOSFET 40V, 121A, 3.3mΩ

N-Channel Power MOSFET 40V, 121A, 3.3mΩ TSM33NB4LCR N-Channel Power MOSFET 4V, 2A, 3.3mΩ FEATURES Low R DS(ON) to minimize conductive losses Logic level Low gate charge for fast power switching % UIS and R g tested. 75 C Operating Junction Temperature

More information

N-Channel Power MOSFET 150V, 9A, 65mΩ

N-Channel Power MOSFET 150V, 9A, 65mΩ TSM65N5CS N-Channel Power MOSFET 5V, 9A, 65mΩ FEATURES Low R DS(ON) to minimize conductive losses Low gate charge for fast power switching % UIS and R g tested Compliant to RoHS directive 2/65/EU and in

More information

N-Channel Power MOSFET 60V, 70A, 12mΩ

N-Channel Power MOSFET 60V, 70A, 12mΩ TSM2N6LCP N-Channel Power MOSFET 6V, 7A, 2mΩ FEATURES Low R DS(ON) to minimize conductive losses Logic level Low gate charge for fast power switching % UIS and R g tested Compliant to RoHS directive 2/65/EU

More information

TSM2N60E 600V, 2A, 4Ω N-Channel Power MOSFET

TSM2N60E 600V, 2A, 4Ω N-Channel Power MOSFET TO-251 (IPAK) TO-252 (DPAK) Pin Definition: 1. Gate 2. Drain 3. Source Key Parameter Performance Parameter Value Unit V DS 600 V R DS(on) (max) 4 Ω Qg (typ) 9.5 nc Features 100% Avalanche Tested G-S ESD

More information

N- and P-Channel 60V (D-S) Power MOSFET

N- and P-Channel 60V (D-S) Power MOSFET TSM652CR N- and P-Channel 6V (D-S) Power MOSFET FEATURES Low R DS(ON) to minimize conductive losses Low gate charge for fast power switching % UIS and R g tested Compliant to RoHS directive 2/65/EU and

More information

P-Channel Power MOSFET -40V, -22A, 15mΩ

P-Channel Power MOSFET -40V, -22A, 15mΩ TSM5P4LCS P-Channel Power MOSFET -4V, -22A, 5mΩ FEATURES Low R DS(ON) to minimize conductive losses Logic level Low gate charge for fast power switching % UIS and R g tested Compliant to RoHS directive

More information

N-Channel Power MOSFET 40V, 135A, 3.8mΩ

N-Channel Power MOSFET 40V, 135A, 3.8mΩ TSM38N4LCP N-Channel Power MOSFET 4V, 35A, 3.8mΩ FEATURES Low R DS(ON) to minimize conductive losses Logic level Low gate charge for fast power switching % UIS and R g tested Compliant to RoHS directive

More information

N-Channel Power MOSFET 150V, 1.4A, 480mΩ

N-Channel Power MOSFET 150V, 1.4A, 480mΩ TSM48N5CX6 N-Channel Power MOSFET 5V,.4A, 48mΩ FEATURES Low R DS(ON) to minimize conductive losses Low gate charge for fast power switching Compliant to RoHS directive /65/EU and in accordance to WEEE

More information

N-Channel Power MOSFET 60V, 38A, 17mΩ

N-Channel Power MOSFET 60V, 38A, 17mΩ N-Channel Power MOSFET 60V, 38A, 17mΩ FEATURES 100% avalanche tested Suitable for 5V drive applications Pb-free plating RoHS compliant Halogen-free mold compound APPLICATION SMPS Synchronous Rectification

More information

TSM480P06CI C0G TSM480P06CZ C0G Not Recommended

TSM480P06CI C0G TSM480P06CZ C0G Not Recommended TO-220 ITO-220 Key Parameter Performance Pin Definition: 1. Gate 2. Drain 3. Source R DS(on) (max) Parameter Value Unit V DS -60 V V GS = -10V 48 V GS = -4.5V 65 mω TO-251S (IPAK) TO-252 (DPAK) Q g 22.4

More information

TS1085 3A Low Dropout Positive Voltage Regulator

TS1085 3A Low Dropout Positive Voltage Regulator TO-220 TO-263 (D 2 PAK) TO-252 (DPAK) Pin Definition: 1. Fixed / Adj 2. Output 3. Input Pin 2 connect to heat sink General Description TS1085 are high performance positive voltage regulators are designed

More information

N-Channel Power MOSFET 700V, 11A, 0.38Ω

N-Channel Power MOSFET 700V, 11A, 0.38Ω N-Channel Power MOSFET 700V, 11A, 0.38Ω FEATURES Super-Junction technology High performance due to small figure-of-merit High ruggedness performance High commutation performance APPLICATION Power Supply

More information

N-Channel Power MOSFET 600V, 1A, 10Ω

N-Channel Power MOSFET 600V, 1A, 10Ω N-Channel Power MOSFET 600V, 1A, 10Ω FEATURES Advanced planar process 100% avalanche tested Low R DS(ON) 8Ω (Typ.) Low gate charge typical @ 6.1 nc (Typ.) Low Crss typical @4.2pF (Typ.) KEY PERFORMANCE

More information

3000/Tape&Reel. 2 P D Maximum Power Dissipation TA = 75 o C 1.44 T J, T stg Operating Junction and Storage Temperature Range

3000/Tape&Reel. 2 P D Maximum Power Dissipation TA = 75 o C 1.44 T J, T stg Operating Junction and Storage Temperature Range DS = 30 R DS(ON), gs @10, I ds @8.5A = 38mΩ R DS(ON), gs @4.5, I ds @5A = 52mΩ Features Advanced trench process technology High Density Cell Design For Ultra Low On-Resistance High Power and Current Handling

More information

TSM70N V, 6A, 0.75Ω N-Channel Power MOSFET

TSM70N V, 6A, 0.75Ω N-Channel Power MOSFET TO-252 (DPAK) TO-251 (IPAK) Pin Definition: 1. Gate 2. Drain 3. Source Key Parameter Performance Parameter Value Unit V DS 700 V R DS(on) (max) 0.75 Ω Q g 10.7 nc Features Block Diagram Super-Junction

More information

TSM340N06CI C0G TSM340N06CZ C0G Not Recommended

TSM340N06CI C0G TSM340N06CZ C0G Not Recommended TO-220 ITO-220 Key Parameter Performance Pin Definition: 1. Gate 2. Drain 3. Source R DS(on) (max) Parameter Value Unit V DS 60 V V GS = 10V 34 V GS = 4.5V 40 mω TO-251S (IPAK) TO-252 (DPAK) Q g 16.6 nc

More information

TSM900N06 60V N-Channel Power MOSFET

TSM900N06 60V N-Channel Power MOSFET TO-251S (IPAK SL) TO-252 (DPAK) Pin Definition: 1. Gate 2. Drain 3. Source Key Parameter Performance Parameter Value Unit V DS 60 V R DS(on) (max) V GS = 10V 90 V GS = 4.5V 100 mω SOT-223 Q g 9.3 nc Ordering

More information

N-Channel 30-V (D-S) MOSFET

N-Channel 30-V (D-S) MOSFET Si36DS N-Channel 3-V (D-S) MOSFET PRODUCT SUMMARY V DS (V) r DS(on) ( ) (A).57 @ V GS = V 3.5 3.9 @ V GS =.5 V. FEATURES TrenchFET Power MOSFET % R g Tested - TO-36 (SOT-3) G 3 D S Top View Si36DS (A6)*

More information

RM4503S8. N and P-Channel Enhancement Mode Power MOSFET. Description. General Features. Application. Package Marking and Ordering Information

RM4503S8. N and P-Channel Enhancement Mode Power MOSFET. Description. General Features. Application. Package Marking and Ordering Information RM4503S8 N and P-Channel Enhancement Mode Power MOSFET Description The RM4503S8 uses advanced trench technology to provide excellent R DS(ON) and low gate charge. The SOP-8 package is universally preferred

More information

TS78L00 Series 3-Terminal 100mA Positive Voltage Regulator

TS78L00 Series 3-Terminal 100mA Positive Voltage Regulator TO-92 Pin Definition: SOT-23 Pin Definition: SOP-8 Pin Definition: SOT-89 1. Output 1. Output 1. Output 8. Input 2. Ground 2. Input 2. Ground 7. Ground 3. Input 3. Ground 3. Ground 6. Ground 4. N/C 5.

More information

TS2509 3A / 500KHz PWM Buck Converter

TS2509 3A / 500KHz PWM Buck Converter SOP-8 Pin Definition: 1. FB 8. Vss 2. EN 7. Vss 3. Comp 6. SW 4. Vcc 5. SW General Description TS2509 is step-down switching regulator with PWM control and with build in internal PMOS. TS2509 provides

More information

N-Channel 100-V (D-S) 175 C MOSFET

N-Channel 100-V (D-S) 175 C MOSFET N-Channel -V (D-S) 75 C MOSFET SUP/SUB85N- PRODUCT SUMMARY V (BR)DSS (V) r DS(on) (Ω) (A).5 at V GS = V.2 at V GS = 4.5 V 85 a FEATURES TrenchFET Power MOSFET 75 C Maximum Junction Temperature Available

More information

N-Channel 60 V (D-S), 175 C MOSFET, Logic Level

N-Channel 60 V (D-S), 175 C MOSFET, Logic Level N-Channel 6 V (D-S), 75 C MOSFET, Logic Level SUD23N6-3L PRODUCT SUMMARY V DS (V) r DS(on) (Ω) I D (A) a.3 at V GS = V 23 6.45 at V GS = 4.5 V 9.5 FEATURES TrenchFET Power MOSFET 75 C Junction Temperature

More information

N-Channel 60-V (D-S), 175 C MOSFET

N-Channel 60-V (D-S), 175 C MOSFET N-Channel -V (D-S), 75 C MOSFET Si4559EY V DS (V) r DS(on) ( ) (A) N-Channel P-Channel.55 @ V GS = V 4.5.75 @ V GS = 4.5 V 3.9. @ V GS = V 3..5 @ V GS = 4.5 V.8 D D S SO-8 S 8 D G 7 D S 3 D G 4 5 D G G

More information

N-Channel 20-V (D-S) MOSFETs

N-Channel 20-V (D-S) MOSFETs TNT/TS N-Channel -V (D-S) MOSFETs PRODUCT SUMMARY I D (A) V DS (V) r DS(on) ( ) TNT TNTS. @ V GS =.5 V.7..5 @ V GS =.5 V.65. FEATURES BENEFITS APPLICATIONS Low On-Resistance:.9 Low Threshold:.9 V (typ).5-v

More information

YJS12N10A. N-Channel Enhancement Mode Field Effect Transistor

YJS12N10A. N-Channel Enhancement Mode Field Effect Transistor RoHS COMPLIANT N-Channel Enhancement Mode Field Effect Transistor Product Summary V DS I D R DS(ON) ( at V GS =10V) R DS(ON) ( at V GS =6V) 100% UIS Tested 100% VDS Tested 100V 12A

More information

TS358 Single Supply Dual Operational Amplifiers

TS358 Single Supply Dual Operational Amplifiers SOP-8 DIP-8 Pin assignment: 1. Output A 8. Vcc 2. Input A (-) 7. Output B 3. Input A (+) 6. Input B (-) 4. Gnd 5. Input B (+) General Description Utilizing the circuit designs perfected for recently introduced

More information

N-Channel 60-V (D-S) MOSFETs with Zener Gate

N-Channel 60-V (D-S) MOSFETs with Zener Gate VN6L, VNKLS, N-Channel 6-V (D-S) MOSFETs with Zener Gate Part Number V (BR)DSS Min (V) r DS(on) Max ( ) V GS(th) (V) I D (A) VN6L 5 @ V GS = V.8 to 2.5.27 VNKLS 6 5 @ V GS = V.8 to 2.5. 7.5 @ V GS = V.6

More information

TS358/TS2904 Single Supply Dual Operational Amplifiers

TS358/TS2904 Single Supply Dual Operational Amplifiers SOP-8 DIP-8 Pin assignment: 1. Output A 8. cc 2. Input A (-) 7. Output B 3. Input A (+) 6. Input B (-) 4. Gnd 5. Input B (+) General Description Utilizing the circuit designs perfected for recently introduced

More information

TS mA Low Quiescent Current CMOS LDO

TS mA Low Quiescent Current CMOS LDO SOT-23 Pin Definition: SOT-89 Pin Definition: TO-92 1. Ground 1. Ground 2. Output 2. Input 3. Input 3. Output Pin Definition: 1. Ground 2. Input 3. Output General Description TS9011 is a positive voltage

More information

N-Channel 30-V (D-S) 175 C MOSFET

N-Channel 30-V (D-S) 175 C MOSFET N-Channel 3-V (D-S) 75 C MOSFET SUP/SUB85N3-4P PRODUCT SUMMARY V (BR)DSS (V) r DS(on) ( ) (A) a.43 @ V GS = V 85 a 3.7 @ V GS = 4.5 V 85 a TO-22AB FEATURES TrenchFET Power MOSFET 75 C Maximum Junction

More information

V DD =30V, I D =200mA, Turn-On Rise Time tr V GS =10V, Turn-Off Delay Time td (off) (Note 1,2) R G =10Ω Turn-Off Fall Time tf

V DD =30V, I D =200mA, Turn-On Rise Time tr V GS =10V, Turn-Off Delay Time td (off) (Note 1,2) R G =10Ω Turn-Off Fall Time tf 60V N-Channel Enhancement Mode MOSFET ESD Protected Voltage 60 V Current 300mA SOT-23 Unit : inch(mm) Features R DS(ON), V GS @10V, I D @500mA

More information

N-Channel 240 -V (D-S) MOSFET

N-Channel 240 -V (D-S) MOSFET N-Channel -V (D-S) MOSFET TNK/TNKL/BS7KL PRODUCT SUMMARY Part Number V DS Min (V) r DS(on) ( ) V GS(th) (V) I D (A) Q g (Typ) TNK TNKL/BS7KL @ V GS = V.8 to.. @ V GS = V.8 to.. 87.87 FEATURES BENEFITS

More information

N-Channel 60-V (D-S) MOSFET

N-Channel 60-V (D-S) MOSFET Si8DS N-Channel -V (D-S) MOSFET PRODUCT SUMMARY V DS (V) R DS(on) (Ω) I D (A). at V GS = V.. at V GS = 4.5 V.7 FEATURES Halogen-free According to IEC 4-- Available TrenchFET Power MOSFET % R g Tested TO-

More information

TS2950/A 150mA Ultra Low Dropout Voltage Regulator

TS2950/A 150mA Ultra Low Dropout Voltage Regulator TO-92 Pin Definition: 1. Output 2. Ground 3. Input TO-252 (DPAK) Pin Definition: 1. Input 2. Ground 3. Output General Description The TS2950/A are low power voltage regulators. These devices are excellent

More information

N-Channel 40-V (D-S), 175 C MOSFET

N-Channel 40-V (D-S), 175 C MOSFET N-Channel 4-V (D-S), 75 C MOSFET SUD5N4-9H PRODUCT SUMMARY V (BR)DSS (V) r DS(on) (Ω) (A) c Q g (Typ) 4.9 at V GS = V 5 55 FEATURES TrenchFET Power MOSFETS 75 C Junction Temperature High Threshold Voltage

More information

N-Channel 75-V (D-S) 175 C MOSFET

N-Channel 75-V (D-S) 175 C MOSFET New Product SUP/SUB85N8-8 N-Channel 75-V (D-S) 75 C MOSFET V (BR)DSS (V) r DS(on) ( ) (A) 75.8 @ V GS = V 85 a TO-22AB D TO-263 G DRAIN connected to TAB G D S Top View SUP85N8-8 G D S Top View SUB85N8-8

More information

P-Channel 55-V (D-S), 175 C MOSFET

P-Channel 55-V (D-S), 175 C MOSFET New Product SUP/SUB75P5-8 P-Channel 55-V (D-S), 75 C MOSFET V (BR)DSS (V) r DS(on) ( ) I D (A) 55.8 75 a TO-22AB S TO-263 G DRAIN connected to TAB G D S Top View SUP75P5-8 G D S Top View SUB75P5-8 D P-Channel

More information

100V P-Channel Trench MOSFET

100V P-Channel Trench MOSFET FEATURES Trench Power MOSFET Technology Low R DS(ON) Low Gate Charge Optimized For Fast-switching Applications TTD18P1AT, TTP18P1AT 1V P-Channel Trench MOSFET APPLICATIONS Load Switches Battery Switch

More information

TS78M00 Series 3-Terminal 500mA Positive Voltage Regulator

TS78M00 Series 3-Terminal 500mA Positive Voltage Regulator TO-220 TO-252 (DPAK) Pin Definition: 1. Input 2. Ground (tab) 3. Output General Description The TS78M00 Series positive voltage regulators are identical to the popular TS7800 Series devices, except that

More information

Characteristics Symbol Rating Unit. T C=70 o C 53.0 T A=25 o C 22.8 (3) T A=70 o C 18.2 (3) Pulsed Drain Current I DM 100 A 46.2 T C=70 o C 29.6.

Characteristics Symbol Rating Unit. T C=70 o C 53.0 T A=25 o C 22.8 (3) T A=70 o C 18.2 (3) Pulsed Drain Current I DM 100 A 46.2 T C=70 o C 29.6. General Description The MDU1514 uses advanced MagnaChip s MOSFET Technology, which provides high performance in on-state resistance, fast switching performance and excellent quality. MDU1514 is suitable

More information

Dual P-Channel 2.5-V (G-S) MOSFET

Dual P-Channel 2.5-V (G-S) MOSFET Dual P-Channel.5-V (G-S) MOSFET PRODUCT SUMMARY V DS (V) R DS(on) (Ω) I D (A).6 at V GS = -.5 V -.7 -. at V GS = -.5 V - 3.7 FEATURES Halogen-free According to IEC 69-- Definition Compliant to RoHS Directive

More information

30V N-Channel Trench MOSFET

30V N-Channel Trench MOSFET FEATURES Trench Power MOSFET Technology Low R DS(ON) Low Gate Charge Optimized For Fast-switching Applications TTD12N3AT, TTP12N3AT 3V N-Channel Trench MOSFET APPLICATIONS Synchronous Rectification in

More information

40V N-Channel Trench MOSFET

40V N-Channel Trench MOSFET FEATURES Trench Power MOSFET Technology Low R DS(ON) Low Gate Charge Optimized For Fast-switching Applications 40V N-Channel Trench MOSFET APPLICATIONS Synchronous Rectification in DC/DC and AC/DC Converters

More information

MDU1516 Single N-channel Trench MOSFET 30V, 47.6A, 9.0mΩ

MDU1516 Single N-channel Trench MOSFET 30V, 47.6A, 9.0mΩ MDU1516 Single N-Channel Trench MOSFET 3V MDU1516 Single N-channel Trench MOSFET 3V, 7.6A, 9.mΩ General Description Features The MDU1516 uses advanced MagnaChip s MOSFET Technology, which provides high

More information

N-Channel 100-V (D-S) 175 C MOSFET

N-Channel 100-V (D-S) 175 C MOSFET N-Channel -V (D-S) 75 C MOSFET SUD4N-25 PRODUCT SUMMARY V DS (V) R DS(on) (Ω) I D (A).25 at V GS = V 4.28 at V GS = 4.5 V 38 FEATURES TrenchFET Power MOSFET 75 C Maximum Junction Temperature % R g Tested

More information

N-Channel 12 V (D-S) MOSFET

N-Channel 12 V (D-S) MOSFET N-Channel 2 V (D-S) MOSFET SiUD42ED.4 mm PowerPAK 86 Single D 3 FEATURES TrenchFET power MOSFET Ultra small.8 mm x.6 mm outline Ultra thin.4 mm max. height Typical ESD protection 5 V (HBM).8 mm Top View.6mm

More information

40V N-Channel Trench MOSFET

40V N-Channel Trench MOSFET FEATURES Trench Power MOSFET Technology Low R DS(ON) Low Gate Charge Optimized For Fast-switching Applications 4V N-Channel Trench MOSFET APPLICATIONS Synchronous Rectification in DC/DC and AC/DC Converters

More information

P-Channel 30-V (D-S), MOSFET

P-Channel 30-V (D-S), MOSFET SUD5P3- P-Channel 3-V (D-S), MOSFET PRODUCT SUMMARY V DS (V) R DS(on) (Ω) (A) a. at V GS = - V - 5-3.8 at V GS = -.5 V - 2 FEATURES TrenchFET Power MOSFETs RoHS COMPLIANT S TO-252 G Drain Connected to

More information

N-Channel 150-V (D-S) MOSFET

N-Channel 150-V (D-S) MOSFET N-Channel 5-V (D-S) MOSFET PRODUCT SUMMARY V (BR)DSS (V) R DS(on) (Ω) I D (A) Q g (Typ.) 5.8 at V GS = V 75 d 64 FEATURES TrenchFET Power MOSFET % R g and UIS Tested APPLICATIONS Primary Side Switch Power

More information

UNISONIC TECHNOLOGIES CO., LTD UT4411

UNISONIC TECHNOLOGIES CO., LTD UT4411 UNISONIC TECHNOLOGIES CO., LTD UT4411 P-CHANNEL ENHANCEMENT MODE DESCRIPTION The UT4411 uses advanced trench technology to provide excellent R DS(ON), low gate charge and operation with low gate voltages.

More information

New Product TO-263. Top View SUB70N03-09BP. Parameter Symbol Limit Unit. Parameter Symbol Limit Unit

New Product TO-263. Top View SUB70N03-09BP. Parameter Symbol Limit Unit. Parameter Symbol Limit Unit New Product SUP/SUB7N3-9BP N-Channel 3-V (D-S), 75 C, MOSFET PWM Optimized V (BR)DSS (V) r DS(on) ( ) (A) 3.9 @ V GS = V 7 a.3 @ V GS = 4.5 V 6 TO-22AB D TO-263 G DRAIN connected to TAB G D S Top View

More information

N-Channel 100 V (D-S) MOSFET

N-Channel 100 V (D-S) MOSFET N-Channel V (D-S) MOSFET SUDN-5L-GE PRODUCT SUMMARY V DS (V) R DS(on) ( ) I D (A) Q g (Typ). at V GS = V.5.7.5 at V GS = 4.5 V FEATURES TrenchFET Power MOSFETs Material categorization: For definitions

More information

N-Channel 60-V (D-S), 175 C MOSFET

N-Channel 60-V (D-S), 175 C MOSFET N-Channel -V (D-S), 75 C MOSFET V (BR)DSS (V) r DS(on) ( ) (A).8 TO-22AB D TO-263 DRAIN connected to TAB G G D S Top View SUPN6-8 G D S Top View SUBN6-8 S N-Channel MOSFET Parameter Symbol Limit Unit Drain-Source

More information

N-Channel 100-V (D-S) 175 C MOSFET

N-Channel 100-V (D-S) 175 C MOSFET N-Channel -V (D-S) 75 C MOSFET SUDN-5L PRODUCT SUMMARY V DS (V) r DS(on) ( ) (A) Q g (Typ). @ V GS = V.5.5 @ V GS =.5 V. 7.7 TO-5 D Drain Connected to Tab G G D S Order Number: Top View SUDN-5L SUDN-5L

More information

P-Channel 2.5-V (G-S) MOSFET

P-Channel 2.5-V (G-S) MOSFET Si33BDV P-Channel.5-V (G-S) MOSFET PRODUCT SUMMARY V DS (V) R DS(on) (Ω) I D (A).6 at V GS = -.5 V -.7 -.9 at V GS = -.7 V - 3.8. at V GS = -.5 V - 3.7 FEATURES Halogen-free According to IEC 69-- Definition

More information

P-Channel 40 V (D-S), 175 C MOSFET

P-Channel 40 V (D-S), 175 C MOSFET P-Channel 4 V (D-S), 75 C MOSFET SUD5P4-9L PRODUCT SUMMARY V DS (V) R DS(on) (Ω) (A) d.94 at V GS = - V - 5-4.45 at V GS = - 4.5 V - 5 FEATURES TrenchFET Power MOSFETs 75 C Junction Temperature Compliant

More information

TS mA Low Noise CMOS LDO

TS mA Low Noise CMOS LDO SOT-343 Pin Definition: SOT-25 Pin Definition: DFN 2x2 1. Enable 1. Input 2. Ground 2. Ground 3. Output 3. Enable 4. Input 4. Bypass 5. Output Pin Definition: 1. Input 2. N/C 3. Output 4. N/C 5. Ground

More information

FEATURES. Parameter Symbol Limit Unit Gate-Source Voltage V GS ± 20 V. 85 a Pulsed Drain Current I DM 600

FEATURES. Parameter Symbol Limit Unit Gate-Source Voltage V GS ± 20 V. 85 a Pulsed Drain Current I DM 600 DTU5N6 N-Channel 6 V (D-S) MOSFET PRODUCT SUMMARY V DS (V) R DS(on) ( ) I D (A) a.25 at V GS = V 5 6.5 at V GS = 4.5 V 75 FEATURES TrenchFET II Power MOSFET TO-252 D G D S Top View S N-Channel MOSFET ABSOLUTE

More information

TS7800 Series 3-Terminal Fixed Positive Voltage Regulator

TS7800 Series 3-Terminal Fixed Positive Voltage Regulator TO-220 ITO-220 Pin Definition: 1. Input 2. Ground (tab) 3. Output General Description The TS7800 series voltage regulators are monolithic integrated circuits designed as fixed-voltage regulators for a

More information

N & P-Channel 100-V (D-S) MOSFET

N & P-Channel 100-V (D-S) MOSFET N & P-Channel -V (D-S) MOSFET Key Features: Low r DS(on) trench technology Low thermal impedance Fast switching speed Typical Applications: LED Inverter Circuits DC/DC Conversion Circuits Motor drives

More information

ACE2305B. P-Channel Enhancement Mode Field Effect Transistor. Description

ACE2305B. P-Channel Enhancement Mode Field Effect Transistor. Description Description The uses advanced trench technology to provide excellent R DS(ON), low gate charge and operation with gate voltages as low as 1.8V. This device is suitable for use as a load switch or in PWM

More information

P-Channel 40 V (D-S) 175 C MOSFET

P-Channel 40 V (D-S) 175 C MOSFET P-Channel 4 V (D-S) 75 C MOSFET SUP/SUB65P4-5 PRODUCT SUMMARY V DS (V) R DS(on) (Ω) I D (A).5 at V GS = - V - 65-4.23 at V GS = - 4.5 V - 5 FEATURES TrenchFET Power MOSFET Compliant to RoHS Directive 22/95/EC

More information

UNISONIC TECHNOLOGIES CO., LTD

UNISONIC TECHNOLOGIES CO., LTD UNISONIC TECHNOLOGIES CO., LTD P-CHANNEL ENHANCEMENT MODE POWER MOSFET DESCRIPTION The uses advanced trench technology to provide excellent R DS(ON), low gate charge and operation with low gate voltages.

More information