TSM V P-Channel MOSFET

Size: px
Start display at page:

Download "TSM V P-Channel MOSFET"

Transcription

1 SOT-26 Pin Definition: 1. Drain 6. Drain 2. Drain 5, Drain 3. Gate 4. Source PRODUCT SUMMARY V DS (V) R DS(on) (mω) I D (A) V GS = -10V V GS = -4.5V -4.1 Features Advance Trench Process Technology High Density Cell Design for Ultra Low On-resistance Application DC-DC Conversion Asynchronous Buck Converter Ordering Information Part No. Package Packing TSM3481CX6 RFG SOT-26 3Kpcs / 7 Reel Note: G denotes for Halogen Free Block Diagram P-Channel MOSFET Absolute Maximum Rating (Ta = 25 C unless otherwise noted) Parameter Symbol Limit Unit Drain-Source Voltage V DS -30 V Gate-Source Voltage V GS ±20 V Continuous Drain Current I D -5.7 A Pulsed Drain Current I DM A Single Pulse Avalanche Current c I AS -13 A Single Pulse Avalanche Energy c E AS 25 mj Maximum Power Dissipation Ta = 25 C P D 1.6 Ta = 75 C 0.9 Operating Junction Temperature T J +150 C Operating Junction and Storage Temperature Range T J, T STG - 55 to +150 C Thermal Performance Parameter Symbol Limit Unit Junction to Case Thermal Resistance RӨ JC 53 C/W Junction to Ambient Thermal Resistance (PCB mounted) RӨ JA 80 C/W Notes: a. Pulse width limited by the Maximum junction temperature b. Surface Mounted on FR4 Board, t 10 sec. c. L = 0.3mH, V GS = -10V, V DD = -25V, R G = 25Ω, I AS = -13A, Starting T J = 25 C W 1 Version: D1704

2 Electrical Specifications (Ta = 25 C unless otherwise noted) Parameter Conditions Symbol Min Typ Max Unit Static Drain-Source Breakdown Voltage V GS = 0V, I D = -250uA BV DSS V Gate Threshold Voltage V DS = V GS, I D = -250µA V GS(TH) V Gate Body Leakage V GS = ±20V, V DS = 0V I GSS ±100 na Zero Gate Voltage Drain Current V DS = -24V, V GS = 0V I DSS µa On-State Drain Current a V DS -5V, V GS = -4.5V I D(ON) A Drain-Source On-State Resistance a V GS = -10V, I D = -5.3A R DS(ON) V GS = -4.5V, I D = -4.1A Forward Transconductance a V DS = -15V, I D = -5.3A g fs S Diode Forward Voltage I S = -1.7A, V GS = 0V V SD V Dynamic b Total Gate Charge Q g V DS = -15V, I D = -5.3A, Gate-Source Charge Q gs V GS = -10V Gate-Drain Charge Q gd Input Capacitance C iss V DS = -15V, V GS = 0V, Output Capacitance C oss f = 1.0MHz Reverse Transfer Capacitance C rss Switching c Turn-On Delay Time t d(on) V DD = -15V, R L = 15Ω, Turn-On Rise Time t r I D = -1A, V GEN = -10V, Turn-Off Delay Time t d(off) R G = 6Ω Turn-Off Fall Time t f Notes: a. pulse test: PW 300µS, duty cycle 2% b. For DESIGN AID ONLY, not subject to production testing. c. Switching time is essentially independent of operating temperature. mω nc pf ns 2 Version: D1704

3 Electrical Characteristics Curve (Ta = 25 C, unless otherwise noted) Output Characteristics Transfer Characteristics On-Resistance vs. Drain Current Gate Charge On-Resistance vs. Junction Temperature Source-Drain Diode Forward Voltage 3 Version: D1704

4 Electrical Characteristics Curve (Ta = 25 C, unless otherwise noted) On-Resistance vs. Gate-Source Voltage Threshold Voltage Single Pulse Power 4 Version: D1704

5 SOT-26 Mechanical Drawing DIM SOT-26 DIMENSION MILLIMETERS INCHES MIN TYP MAX MIN TYP MAX A 0.95 BSC BSC A1 1.9 BSC BSC B C D E F G H I J 5º -- 10º 5º -- 10º Marking Diagram 81 = Device Code Y = Year Code M = Month Code for Halogen Free Product O =Jan P =Feb Q =Mar R =Apr S =May T =Jun U =Jul V =Aug W =Sep X =Oct Y =Nov Z =Dec L = Lot Code 5 Version: D1704

6 Notice Specifications of the products displayed herein are subject to change without notice. TSC or anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies. Information contained herein is intended to provide a product description only. No license, express or implied, to any intellectual property rights is granted by this document. Except as provided in TSC s terms and conditions of sale for such products, TSC assumes no liability whatsoever, and disclaims any express or implied warranty, relating to sale and/or use of TSC products including liability or warranties relating to fitness for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications. Customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify TSC for any damages resulting from such improper use or sale. 6 Version: D1704

TSM V P-Channel MOSFET

TSM V P-Channel MOSFET SOT-23 Pin Definition: 1. Gate 2. Source 3. Drain PRODUCT SUMMARY V DS (V) R DS(on) (mω) I D (A) 39 @ V GS = -4.5V -4.7-20 52 @ V GS = -2.5V -4.1 68 @ V GS = -1.8V -2.0 Features Advance Trench Process

More information

Not Recommended. TSM V N-Channel MOSFET. PRODUCT SUMMARY V DS (V) R DS(on) (mω) I D (A) Features. Block Diagram. Application

Not Recommended. TSM V N-Channel MOSFET. PRODUCT SUMMARY V DS (V) R DS(on) (mω) I D (A) Features. Block Diagram. Application SOT-23 Pin Definition: 1. Gate 2. Source 3. Drain PRODUCT SUMMARY V DS (V) R DS(on) (mω) I D (A) 30 @ V GS = 10V 5.8 30 43 @ V GS = 4.5V 5.0 Features Advance Trench Process Technology High Density Cell

More information

TSM V P-Channel MOSFET

TSM V P-Channel MOSFET SOT-23 Pin Definition: 1. Gate 2. Source 3. Drain PRODUCT SUMMARY V DS (V) R DS(on) (mω) I D (A) 55 @ V GS =-4.5V -3.2-20 80 @ V GS =-2.5V -2.7 130 @ V GS =-1.8V -2.0 Features Advance Trench Process Technology

More information

TSM V N-Channel MOSFET

TSM V N-Channel MOSFET SOT-23 Pin Definition: 1. Gate 2. Source 3. Drain PRODUCT SUMMARY V DS (V) R DS(on) (mω) I D (A) 60 156 @ V GS = 10V 3 192 @ V GS = 4.5V 2.1 Features Advance Trench Process Technology High Density Cell

More information

TSM4936D 30V N-Channel MOSFET

TSM4936D 30V N-Channel MOSFET SOP-8 Pin Definition: 1. Source 1 8. Drain 1 2. Gate 1 7. Drain 1 3. Source 2 6. Drain 2 4. Gate 2 5. Drain 2 PRODUCT SUMMARY V DS (V) R DS(on) (mω) I D (A) 36 @ V GS = 10V 5.9 30 53 @ V GS = 4.5V 4.9

More information

TSM V P-Channel MOSFET

TSM V P-Channel MOSFET SOT-26 Pin Definition: 1. Drain 6. Drain 2. Drain 5, Drain 3. Gate 4. Source PRODUCT SUMMARY V DS (V) R DSON (mω) I D (A) 20 60 @ VGS = -4.5V -4.7 100 @ VGS = -2.5V -3.8 Features Advance Trench Process

More information

TSM6866SD 20V Dual N-Channel MOSFET

TSM6866SD 20V Dual N-Channel MOSFET TSSOP-8 Pin Definition: 1. Drain 1 8. Drain 2 2. Source 1 7. Source 2 3. Source 1 6. Source 2 4. Gate 1 5. Gate 2 PRODUCT SUMMARY V DS (V) R DS(on) (mω) I D (A) 30 @ V GS = 4.5V 6.0 20 40 @ V GS = 2.5V

More information

TSM V N-Channel MOSFET

TSM V N-Channel MOSFET SOT-23 Pin Definition: 1. Gate 2. Source 3. Drain Key Parameter Performance Parameter Value Unit V DS 20 V V GS = 4.5V 33 R DS(on) (max) V GS = 2.5V 40 V GS = 1.8V 51 mω Q g 11 nc Features Advance Trench

More information

TSM2307CX 30V P-Channel MOSFET

TSM2307CX 30V P-Channel MOSFET SOT-23 Pin Definition: 1. Gate 2. Source 3. Drain Key Parameter Performance Parameter Value Unit V DS -30 V V GS = -10V 95 R DS(on) (max) mω V GS = -4.5V 140 Q g 10 nc Features Advance Trench Process Technology

More information

Not Recommended. TSM V P-Channel MOSFET. PRODUCT SUMMARY V DS (V) R DS(on) (mω) I D (A) Features. Block Diagram. Application

Not Recommended. TSM V P-Channel MOSFET. PRODUCT SUMMARY V DS (V) R DS(on) (mω) I D (A) Features. Block Diagram. Application SOP-8 Pin Definition: 1. Source 8. Drain 2. Source 7. Drain 3. Source 6. Drain 4. Gate 5. Drain PRODUCT SUMMARY V DS (V) R DS(on) (mω) I D (A) 14 @ V GS = -10V -11-30 20 @ V GS = -4.5V -8.5 Features Advance

More information

N-Channel Power MOSFET 40V, 3.9A, 45mΩ

N-Channel Power MOSFET 40V, 3.9A, 45mΩ N-Channel Power MOSFET 40V, 3.9A, 45mΩ FEATURES Advance Trench Process Technology High density cell design for Ultra Low On-resistance Pb-free plating Compliant to RoHS Directive 2011/65/EU and in accordance

More information

TSM V N-Channel MOSFET w/esd Protected

TSM V N-Channel MOSFET w/esd Protected SOP-8 Pin Definition: 1. Source 2. Source 3. Source 4. Gate 5, 6, 7, 8. Drain PRODUCT SUMMARY V DS (V) R DS(on) (mω) I D (A) 25 @ V GS = 4.5V 4.5 20 30 @ V GS = 2.5V 3.5 65 @ V GS = 1.8V 2.0 Features Advance

More information

TSM V N-Channel MOSFET

TSM V N-Channel MOSFET SOT-23 Pin Definition: 1. Gate 2. Source 3. Drain PRODUCT SUMMARY V DS (V) R DS(on) (mω) I D (A) 33 @ V GS = 4.5V 4.9 20 40 @ V GS = 2.5V 4.4 100 @ V GS = 1.8V 2.9 Features Advance Trench Process Technology

More information

N-Channel Power MOSFET 100V, 81A, 10mΩ

N-Channel Power MOSFET 100V, 81A, 10mΩ N-Channel Power MOSFET 100V, 81A, 10mΩ FEATURES Advanced Trench Technology 100% avalanche tested APPLICATION Synchronous Rectification in SMPS High Speed Power Switching KEY PERFORMANCE PARAMETERS PARAMETER

More information

N-Channel Power MOSFET 100V, 160A, 5.5mΩ

N-Channel Power MOSFET 100V, 160A, 5.5mΩ N-Channel Power MOSFET 100V, 160A, 5.5mΩ FEATURES Advanced Trench Technology Low R DS(ON) 5.5mΩ (Max.) Low gate charge typical @ 154nC (Typ.) Low Crss typical @ 260pF (Typ.) KEY PERFORMANCE PARAMETERS

More information

TSM V P-Channel MOSFET

TSM V P-Channel MOSFET SOT-23 Pin Definition: 1. Gate 2. Source 3. Drain PRODUCT SUMMARY V DS (V) R DS(on) (mω) I D (A) 55 @ V GS = -4.5V -4.0-20 85 @ V GS = -2.5V -2.5 Features Advance Trench Process Technology High Density

More information

N-Channel Power MOSFET 800V, 0.3A, 21.6Ω

N-Channel Power MOSFET 800V, 0.3A, 21.6Ω N-Channel Power MOSFET 800V, 0.3A, 21.6Ω FEATURES Advanced planar process 100% avalanche tested Fast switching APPLICATION Power Supply Lighting KEY PERFORMANCE PARAMETERS PARAMETER VALUE UNIT V DS 800

More information

Dual P-Channel MOSFET -60V, -12A, 68mΩ

Dual P-Channel MOSFET -60V, -12A, 68mΩ Dual P-Channel MOSFET -60V, -12A, 68mΩ FEATURES Fast switching Low thermal resistance package Low profile package Pb-free plating RoHS compliant Halogen-free package KEY PERFORMANCE PARAMETERS PARAMETER

More information

Dual N-Channel MOSFET 30V, 20A, 20mΩ

Dual N-Channel MOSFET 30V, 20A, 20mΩ Dual N-Channel MOSFET 30V, 20A, 20mΩ FEATURES Fast switching 100% avalanche tested Pb-free plating Compliant to RoHS directive 2011/65/EU and in accordance to WEEE 2002/96/EC Halogen-free according to

More information

TSM6N50 500V N-Channel Power MOSFET

TSM6N50 500V N-Channel Power MOSFET ITO-220 TO-252 (DPAK) Features Low R DS(ON) 1.4Ω (Max.) TO-251 (IPAK) Low gate charge typical @ 25nC (Typ.) Low Crss typical @ 15pF (Typ.) Fast Switching Ordering Information Part No. Package Packing TSM6N50CI

More information

TSM3N90 900V N-Channel Power MOSFET

TSM3N90 900V N-Channel Power MOSFET TO-220 ITO-220 PRODUCT SUMMARY Pin Definition: 1. Gate 2. Drain 3. Source V DS (V) R DS(on) (Ω) I D (A) 900 5.1 @ V GS =10V 1.25 TO-251 (IPAK) TO-252 (DPAK) General Description The TSM3N90 N-Channel Power

More information

TSM4946D 60V Dual N-Channel MOSFET

TSM4946D 60V Dual N-Channel MOSFET SOP-8 Pin Definition: 1. Source 1 8. Drain 1 2. Gate 1 7. Drain 1 3. Source 2 6. Drain 2 4. Gate 2 5. Drain 2 PRODUCT SUMMARY V DS (V) R DS(on) (mω) I D (A) 55 @ V GS = 10V 4.5 60 75 @ V GS = 4.5V 3.9

More information

Dual N-Channel MOSFET 30V, 20A, 20mΩ

Dual N-Channel MOSFET 30V, 20A, 20mΩ Dual N-Channel MOSFET 30V, 20A, 20mΩ FEATURES Fast switching 100% avalanche tested Pb-free plating RoHS compliant Halogen-free package APPLICATION Power Supply Motor COntrol KEY PERFORMANCE PARAMETERS

More information

N-Channel Power MOSFET 900V, 4A, 4.0Ω

N-Channel Power MOSFET 900V, 4A, 4.0Ω N-Channel Power MOSFET 900V, 4A, 4.0Ω FEATURES Low R DS(ON) 4Ω (Max.) Low gate charge typical @ 25nC (Typ.) Improve dv/dt capability APPLICATION High efficiency switch mode power Supply Lighting KEY PERFORMANCE

More information

N-Channel Power MOSFET 600V, 1A, 10Ω

N-Channel Power MOSFET 600V, 1A, 10Ω N-Channel Power MOSFET 600V, 1A, 10Ω FEATURES Advanced planar process 100% avalanche tested Low R DS(ON) 8Ω (Typ.) Low gate charge typical @ 6.1 nc (Typ.) Low Crss typical @4.2pF (Typ.) KEY PERFORMANCE

More information

Preliminary TSM9N50 500V N-Channel Power MOSFET

Preliminary TSM9N50 500V N-Channel Power MOSFET TO-220 ITO-220 Pin Definition: 1. Gate 2. Drain 3. Source PRODUCT SUMMARY V DS (V) R DS(on) (Ω) I D (A) 500 0.85 @ V GS =10V 4.8 General Description The TSM9N50 N-Channel enhancement mode Power MOSFET

More information

N-Channel Power MOSFET 30V, 78A, 3.8mΩ

N-Channel Power MOSFET 30V, 78A, 3.8mΩ TSM38N3PQ33 N-Channel Power MOSFET 3V, 78A, 3.8mΩ FEATURES Low R DS(ON) to minimize conductive losses Low gate charge for fast power switching % UIS and R g tested Compliant to RoHS directive 2/65/EU and

More information

N-Channel Power MOSFET 60V, 70A, 12mΩ

N-Channel Power MOSFET 60V, 70A, 12mΩ TSM2N6LCP N-Channel Power MOSFET 6V, 7A, 2mΩ FEATURES Low R DS(ON) to minimize conductive losses Logic level Low gate charge for fast power switching % UIS and R g tested Compliant to RoHS directive 2/65/EU

More information

N-Channel Power MOSFET 60V, 38A, 17mΩ

N-Channel Power MOSFET 60V, 38A, 17mΩ N-Channel Power MOSFET 60V, 38A, 17mΩ FEATURES 100% avalanche tested Suitable for 5V drive applications Pb-free plating RoHS compliant Halogen-free mold compound APPLICATION SMPS Synchronous Rectification

More information

N-Channel Power MOSFET 150V, 9A, 65mΩ

N-Channel Power MOSFET 150V, 9A, 65mΩ TSM65N5CS N-Channel Power MOSFET 5V, 9A, 65mΩ FEATURES Low R DS(ON) to minimize conductive losses Low gate charge for fast power switching % UIS and R g tested Compliant to RoHS directive 2/65/EU and in

More information

P-Channel Power MOSFET -40V, -22A, 15mΩ

P-Channel Power MOSFET -40V, -22A, 15mΩ TSM5P4LCS P-Channel Power MOSFET -4V, -22A, 5mΩ FEATURES Low R DS(ON) to minimize conductive losses Logic level Low gate charge for fast power switching % UIS and R g tested Compliant to RoHS directive

More information

N-Channel Power MOSFET 40V, 135A, 3.8mΩ

N-Channel Power MOSFET 40V, 135A, 3.8mΩ TSM38N4LCP N-Channel Power MOSFET 4V, 35A, 3.8mΩ FEATURES Low R DS(ON) to minimize conductive losses Logic level Low gate charge for fast power switching % UIS and R g tested Compliant to RoHS directive

More information

N-Channel Power MOSFET 150V, 1.4A, 480mΩ

N-Channel Power MOSFET 150V, 1.4A, 480mΩ TSM48N5CX6 N-Channel Power MOSFET 5V,.4A, 48mΩ FEATURES Low R DS(ON) to minimize conductive losses Low gate charge for fast power switching Compliant to RoHS directive /65/EU and in accordance to WEEE

More information

N-Channel Power MOSFET 700V, 11A, 0.38Ω

N-Channel Power MOSFET 700V, 11A, 0.38Ω N-Channel Power MOSFET 700V, 11A, 0.38Ω FEATURES Super-Junction technology High performance due to small figure-of-merit High ruggedness performance High commutation performance APPLICATION Power Supply

More information

N-Channel Power MOSFET 600V, 11A, 0.38Ω

N-Channel Power MOSFET 600V, 11A, 0.38Ω N-Channel Power MOSFET 600V, 11A, 0.38Ω FEATURES Super-Junction technology High performance due to small figure-of-merit High ruggedness performance High commutation performance Pb-free plating Compliant

More information

TSM V P-Channel Power MOSFET

TSM V P-Channel Power MOSFET SOT-23 Pin Definition: 1. Gate 2. Source 3. Drain Key Parameter Performance Parameter Value Unit V DS -60 V R DS(on) (max) V GS = -10V 190 V GS = -4.5V 240 mω Q g 8.2 nc Ordering Information Block Diagram

More information

TSM650P03CX 30V P-Channel Power MOSFET

TSM650P03CX 30V P-Channel Power MOSFET SOT-23 Pin Definition: 1. Gate 2. Source 3. Drain Key Parameter Performance Parameter Value Unit V DS -30 V V GS =- 10V 65 R DS(on) (max) V GS = -4.5V 75 V GS = -2.5V 100 mω Q g 8 nc Features Fast Switching

More information

TSM1N60L 600V N-Channel Power MOSFET

TSM1N60L 600V N-Channel Power MOSFET TO-252 TO-251 Pin Definition: 1. Gate 2. Drain 3. Source PRODUCT SUMMARY V DS (V) R DS(on) (Ω) I D (A) 600 12 @ V GS =10V 1 General Description The TSM1N60L is used an advanced termination scheme to provide

More information

N-Channel Power MOSFET 600V, 18A, 0.19Ω

N-Channel Power MOSFET 600V, 18A, 0.19Ω N-Channel Power MOSFET 600V, 18A, 0.19Ω FEATURES Super-Junction technology High performance, small R DS(ON) *Q g figure of merit (FOM) High ruggedness performance 100% UIS tested High commutation performance

More information

N-Channel Power MOSFET 30V, 185A, 1.8mΩ

N-Channel Power MOSFET 30V, 185A, 1.8mΩ TSM8NA3CR N-Channel Power MOSFET 3V, 85A,.8mΩ FEATURES Low R DS(ON) to minimize conductive losses Low gate charge for fast power switching % UIS and R g tested Compliant to RoHS directive 2/65/EU and in

More information

N-Channel Power MOSFET 600V, 18A, 0.19Ω

N-Channel Power MOSFET 600V, 18A, 0.19Ω N-Channel Power MOSFET 600V, 18A, 0.19Ω FEATURES Super-Junction technology High performance, small R DS(ON) *Q g figure of merit (FOM) High ruggedness performance 100% UIS & R g tested High commutation

More information

N-Channel Power MOSFET 100V, 46A, 16mΩ

N-Channel Power MOSFET 100V, 46A, 16mΩ TSM6NLCR N-Channel Power MOSFET V, 46A, 6mΩ FEATURES Low R DS(ON) to minimize conductive losses Logic level Low gate charge for fast power switching % UIS and R g tested Compliant to RoHS directive 2/65/EU

More information

N-Channel Power MOSFET 500V, 9A, 0.9Ω

N-Channel Power MOSFET 500V, 9A, 0.9Ω TSM9ND5CI N-Channel Power MOSFET 5V, 9A,.9Ω FEATURES % UIS and Rg tested Advanced planar process Compliant to RoHS Directive /65/EU and in accordance to WEEE /96/EC Halogen-free according to IEC 649--

More information

N- and P-Channel 60V (D-S) Power MOSFET

N- and P-Channel 60V (D-S) Power MOSFET TSM652CR N- and P-Channel 6V (D-S) Power MOSFET FEATURES Low R DS(ON) to minimize conductive losses Low gate charge for fast power switching % UIS and R g tested Compliant to RoHS directive 2/65/EU and

More information

N-Channel Power MOSFET 40V, 121A, 3.3mΩ

N-Channel Power MOSFET 40V, 121A, 3.3mΩ TSM33NB4LCR N-Channel Power MOSFET 4V, 2A, 3.3mΩ FEATURES Low R DS(ON) to minimize conductive losses Logic level Low gate charge for fast power switching % UIS and R g tested. 75 C Operating Junction Temperature

More information

TSM2N60E 600V, 2A, 4Ω N-Channel Power MOSFET

TSM2N60E 600V, 2A, 4Ω N-Channel Power MOSFET TO-251 (IPAK) TO-252 (DPAK) Pin Definition: 1. Gate 2. Drain 3. Source Key Parameter Performance Parameter Value Unit V DS 600 V R DS(on) (max) 4 Ω Qg (typ) 9.5 nc Features 100% Avalanche Tested G-S ESD

More information

TSM480P06CI C0G TSM480P06CZ C0G Not Recommended

TSM480P06CI C0G TSM480P06CZ C0G Not Recommended TO-220 ITO-220 Key Parameter Performance Pin Definition: 1. Gate 2. Drain 3. Source R DS(on) (max) Parameter Value Unit V DS -60 V V GS = -10V 48 V GS = -4.5V 65 mω TO-251S (IPAK) TO-252 (DPAK) Q g 22.4

More information

TSM340N06CI C0G TSM340N06CZ C0G Not Recommended

TSM340N06CI C0G TSM340N06CZ C0G Not Recommended TO-220 ITO-220 Key Parameter Performance Pin Definition: 1. Gate 2. Drain 3. Source R DS(on) (max) Parameter Value Unit V DS 60 V V GS = 10V 34 V GS = 4.5V 40 mω TO-251S (IPAK) TO-252 (DPAK) Q g 16.6 nc

More information

TSM900N06 60V N-Channel Power MOSFET

TSM900N06 60V N-Channel Power MOSFET TO-251S (IPAK SL) TO-252 (DPAK) Pin Definition: 1. Gate 2. Drain 3. Source Key Parameter Performance Parameter Value Unit V DS 60 V R DS(on) (max) V GS = 10V 90 V GS = 4.5V 100 mω SOT-223 Q g 9.3 nc Ordering

More information

TSM70N V, 6A, 0.75Ω N-Channel Power MOSFET

TSM70N V, 6A, 0.75Ω N-Channel Power MOSFET TO-252 (DPAK) TO-251 (IPAK) Pin Definition: 1. Gate 2. Drain 3. Source Key Parameter Performance Parameter Value Unit V DS 700 V R DS(on) (max) 0.75 Ω Q g 10.7 nc Features Block Diagram Super-Junction

More information

3000/Tape&Reel. 2 P D Maximum Power Dissipation TA = 75 o C 1.44 T J, T stg Operating Junction and Storage Temperature Range

3000/Tape&Reel. 2 P D Maximum Power Dissipation TA = 75 o C 1.44 T J, T stg Operating Junction and Storage Temperature Range DS = 30 R DS(ON), gs @10, I ds @8.5A = 38mΩ R DS(ON), gs @4.5, I ds @5A = 52mΩ Features Advanced trench process technology High Density Cell Design For Ultra Low On-Resistance High Power and Current Handling

More information

N-Channel 60 V (D-S), 175 C MOSFET, Logic Level

N-Channel 60 V (D-S), 175 C MOSFET, Logic Level N-Channel 6 V (D-S), 75 C MOSFET, Logic Level SUD23N6-3L PRODUCT SUMMARY V DS (V) r DS(on) (Ω) I D (A) a.3 at V GS = V 23 6.45 at V GS = 4.5 V 9.5 FEATURES TrenchFET Power MOSFET 75 C Junction Temperature

More information

N-Channel 30-V (D-S) MOSFET

N-Channel 30-V (D-S) MOSFET Si36DS N-Channel 3-V (D-S) MOSFET PRODUCT SUMMARY V DS (V) r DS(on) ( ) (A).57 @ V GS = V 3.5 3.9 @ V GS =.5 V. FEATURES TrenchFET Power MOSFET % R g Tested - TO-36 (SOT-3) G 3 D S Top View Si36DS (A6)*

More information

MDU1516 Single N-channel Trench MOSFET 30V, 47.6A, 9.0mΩ

MDU1516 Single N-channel Trench MOSFET 30V, 47.6A, 9.0mΩ MDU1516 Single N-Channel Trench MOSFET 3V MDU1516 Single N-channel Trench MOSFET 3V, 7.6A, 9.mΩ General Description Features The MDU1516 uses advanced MagnaChip s MOSFET Technology, which provides high

More information

N-Channel 100-V (D-S) 175 C MOSFET

N-Channel 100-V (D-S) 175 C MOSFET N-Channel -V (D-S) 75 C MOSFET SUP/SUB85N- PRODUCT SUMMARY V (BR)DSS (V) r DS(on) (Ω) (A).5 at V GS = V.2 at V GS = 4.5 V 85 a FEATURES TrenchFET Power MOSFET 75 C Maximum Junction Temperature Available

More information

N-Channel 40-V (D-S), 175 C MOSFET

N-Channel 40-V (D-S), 175 C MOSFET N-Channel 4-V (D-S), 75 C MOSFET SUD5N4-9H PRODUCT SUMMARY V (BR)DSS (V) r DS(on) (Ω) (A) c Q g (Typ) 4.9 at V GS = V 5 55 FEATURES TrenchFET Power MOSFETS 75 C Junction Temperature High Threshold Voltage

More information

Characteristics Symbol Rating Unit. T C=70 o C 53.0 T A=25 o C 22.8 (3) T A=70 o C 18.2 (3) Pulsed Drain Current I DM 100 A 46.2 T C=70 o C 29.6.

Characteristics Symbol Rating Unit. T C=70 o C 53.0 T A=25 o C 22.8 (3) T A=70 o C 18.2 (3) Pulsed Drain Current I DM 100 A 46.2 T C=70 o C 29.6. General Description The MDU1514 uses advanced MagnaChip s MOSFET Technology, which provides high performance in on-state resistance, fast switching performance and excellent quality. MDU1514 is suitable

More information

MDV1548 Single N-Channel Trench MOSFET 30V

MDV1548 Single N-Channel Trench MOSFET 30V General Description The MDV1548 uses advanced MagnaChip s MOSFET Technology, which provides high performance in on-state resistance, fast switching performance and excellent quality. MDV1548 is suitable

More information

Automotive Dual N-Channel 40 V (D-S) 175 C MOSFET

Automotive Dual N-Channel 40 V (D-S) 175 C MOSFET Automotive Dual N-Channel 4 V (D-S) 75 C MOSFET PRODUCT SUMMARY V DS (V) 4 R DS(on) ( ) at V GS = V.35 R DS(on) ( ) at V GS = 4.5 V.48 I D (A) 8 Configuration Dual FEATURES TrenchFET Power MOSFET AEC-Q

More information

N-Channel Power MOSFET 600V, 0.5A, 10Ω

N-Channel Power MOSFET 600V, 0.5A, 10Ω N-Channel Power MOSFET 6V,.5A, Ω FEATURES % Avalanche Tested Pb-free plating Compliant to RoHS Directive 2/65/EU and in accordance to WEE 22/96/EC Halogen-free according to IEC 6249-2-2 KEY PERFORMANCE

More information

Automotive P-Channel 80 V (D-S) 175 C MOSFET

Automotive P-Channel 80 V (D-S) 175 C MOSFET Automotive P-Channel 8 V (D-S) 175 C MOSFET PRODUCT SUMMARY V DS (V) - 8 R DS(on) () at V GS = - 1 V.25 R DS(on) () at V GS = - 4.5 V.31 I D (A) - 5 Configuration Single FEATURES TrenchFET Power MOSFET

More information

N-Channel 100-V (D-S) 175 C MOSFET

N-Channel 100-V (D-S) 175 C MOSFET N-Channel -V (D-S) 75 C MOSFET SUD4N-25 PRODUCT SUMMARY V DS (V) R DS(on) (Ω) I D (A).25 at V GS = V 4.28 at V GS = 4.5 V 38 FEATURES TrenchFET Power MOSFET 75 C Maximum Junction Temperature % R g Tested

More information

P-Channel 100 V (D-S) MOSFET

P-Channel 100 V (D-S) MOSFET SUD9P-95 P-Channel V (D-S) MOSFET PRODUCT SUMMARY V DS (V) (Ω) I D (A) Q g (Typ.).95 at V GS = - V - 8.8 -.7.2 at V GS = - 4.5 V - 8.5 FEATURES Halogen-free According to IEC 6249-2-2 Definition TrenchFET

More information

N-Channel 100 V (D-S) MOSFET

N-Channel 100 V (D-S) MOSFET N-Channel V (D-S) MOSFET SUDN-5L-GE PRODUCT SUMMARY V DS (V) R DS(on) ( ) I D (A) Q g (Typ). at V GS = V.5.7.5 at V GS = 4.5 V FEATURES TrenchFET Power MOSFETs Material categorization: For definitions

More information

Dual P-Channel 60-V (D-S) 175 MOSFET

Dual P-Channel 60-V (D-S) 175 MOSFET Dual P-Channel 6-V (D-S) 75 MOSFET PRODUCT SUMMARY V DS (V) R DS(on) (Ω) I D (A).2 at V GS = - V - 3. - 6.5 at V GS = - 4.5 V - 2.8 FEATURES Halogen-free According to IEC 6249-2-2 Definition TrenchFET

More information

Characteristics Symbol Rating Unit. T C=70 o C T A=25 o C 30.4 (3) T A=70 o C 24.2 (3) Pulsed Drain Current I DM 100 A 69.4.

Characteristics Symbol Rating Unit. T C=70 o C T A=25 o C 30.4 (3) T A=70 o C 24.2 (3) Pulsed Drain Current I DM 100 A 69.4. General Description MDU1512 Single N-channel Trench MOSFET 3V, 1.A, 3.4mΩ The MDU1512 uses advanced MagnaChip s MOSFET Technology, which provides high performance in on-state resistance, fast switching

More information

Dual P-Channel 20-V (D-S) MOSFET

Dual P-Channel 20-V (D-S) MOSFET New Product Dual P-Channel 2-V (D-S) MOSFET Si9933CDY PRODUCT SUMMARY V DS (V) R DS(on) (Ω) I D (A) a, e Q g (Typ.).58 at V GS = -.5 V - - 2 8.9 at V GS = - 2.5 V - FEATURES Halogen-free Option Available

More information

MDU1511 Single N-channel Trench MOSFET 30V, 100.0A, 2.4mΩ

MDU1511 Single N-channel Trench MOSFET 30V, 100.0A, 2.4mΩ MDU1511 Single N-Channel Trench MOSFET 3V ㅊ MDU1511 Single N-channel Trench MOSFET 3V, 1.A, 2.mΩ General Description Features The MDU1511 uses advanced MagnaChip s MOSFET Technology, which provides high

More information

N-Channel 30-V (D-S) 175 C MOSFET

N-Channel 30-V (D-S) 175 C MOSFET N-Channel 3-V (D-S) 75 C MOSFET SUP/SUB85N3-4P PRODUCT SUMMARY V (BR)DSS (V) r DS(on) ( ) (A) a.43 @ V GS = V 85 a 3.7 @ V GS = 4.5 V 85 a TO-22AB FEATURES TrenchFET Power MOSFET 75 C Maximum Junction

More information

N-Channel 60-V (D-S) MOSFET

N-Channel 60-V (D-S) MOSFET Si8DS N-Channel -V (D-S) MOSFET PRODUCT SUMMARY V DS (V) R DS(on) (Ω) I D (A). at V GS = V.. at V GS = 4.5 V.7 FEATURES Halogen-free According to IEC 4-- Available TrenchFET Power MOSFET % R g Tested TO-

More information

Characteristics Symbol Rating Unit. T C=70 o C 36.6 T A=25 o C 20.4 (3) T A=70 o C 16.3 (3) Pulsed Drain Current I DM 100 A 31.2 T C=70 o C 20.0.

Characteristics Symbol Rating Unit. T C=70 o C 36.6 T A=25 o C 20.4 (3) T A=70 o C 16.3 (3) Pulsed Drain Current I DM 100 A 31.2 T C=70 o C 20.0. General Description The MDD152 uses advanced MagnaChip s MOSFET Technology, which provides high performance in on-state resistance, fast switching performance and excellent quality. MDD152 is suitable

More information

N-Channel 150-V (D-S) MOSFET

N-Channel 150-V (D-S) MOSFET N-Channel 5-V (D-S) MOSFET PRODUCT SUMMARY V (BR)DSS (V) R DS(on) (Ω) I D (A) Q g (Typ.) 5.8 at V GS = V 75 d 64 FEATURES TrenchFET Power MOSFET % R g and UIS Tested APPLICATIONS Primary Side Switch Power

More information

Automotive N-Channel 300 V (D-S) 175 C MOSFET

Automotive N-Channel 300 V (D-S) 175 C MOSFET Automotive N-Channel 300 V (D-S) 175 C MOSFET PRODUCT SUMMARY V DS (V) 300 R DS(on) (Ω) at V GS = V 0.330 I D (A) Configuration Single TO-252 D FEATURES TrenchFET power MOSFET Package with low thermal

More information

P-Channel 40 V (D-S), 175 C MOSFET

P-Channel 40 V (D-S), 175 C MOSFET P-Channel 4 V (D-S), 75 C MOSFET SUD5P4-9L PRODUCT SUMMARY V DS (V) R DS(on) (Ω) (A) d.94 at V GS = - V - 5-4.45 at V GS = - 4.5 V - 5 FEATURES TrenchFET Power MOSFETs 75 C Junction Temperature Compliant

More information

Dual N-Channel 30 V (D-S) MOSFET

Dual N-Channel 30 V (D-S) MOSFET Dual N-Channel 3 V (D-S) MOSFET PRODUCT SUMMARY V DS (V) R DS(on) ( ) I D (A) Q g (Typ.) 3. at V GS = V 2..7 at V GS =.5 V 5. nc SO-8 S 8 D G 2 7 D FEATURES Halogen-free According to IEC 29-2-2 Definition

More information

Characteristics Symbol Rating Unit. T C=70 o C T A=25 o C 36.1 (3) T A=70 o C 28.8 (3) Pulsed Drain Current I DM 100 A 78.1.

Characteristics Symbol Rating Unit. T C=70 o C T A=25 o C 36.1 (3) T A=70 o C 28.8 (3) Pulsed Drain Current I DM 100 A 78.1. ㅊ General Description MDU1511 Single N-channel Trench MOSFET 3V, 1.A, 2.mΩ The MDU1511 uses advanced MagnaChip s MOSFET Technology, which provides high performance in on-state resistance, fast switching

More information

Automotive P-Channel 60 V (D-S) 175 C MOSFET

Automotive P-Channel 60 V (D-S) 175 C MOSFET Automotive P-Channel 6 V (D-S) 75 C MOSFET PRODUCT SUMMARY V DS (V) -6 R DS(on) (Ω) at V GS = - V.93 R DS(on) (Ω) at V GS = -4.5 V.33 I D (A) - Configuration Single TO-22AB FEATURES TrenchFET power MOSFET

More information

N-Channel 30 V (D-S) MOSFET

N-Channel 30 V (D-S) MOSFET N-Channel 3 V (D-S) MOSFET SUD5N3-12P-GE3 PRODUCT SUMMARY V DS (V) R DS(on) (Ω) I D (A) a.12 at V GS = 1 V 16.8 3.175 at V GS = 4.5 V 13.9 FEATURES TrenchFET power MOSFET 1 % R g and UIS tested Material

More information

MDV1545 Single N-Channel Trench MOSFET 30V

MDV1545 Single N-Channel Trench MOSFET 30V General Description The MDV1545 uses advanced MagnaChip s MOSFET Technology, which provides high performance in on-state resistance, fast switching performance and excellent quality. MDV1545 is suitable

More information

N- and P-Channel 30 V (D-S) MOSFET

N- and P-Channel 30 V (D-S) MOSFET N- and P-Channel 3 V (D-S) MOSFET PRODUCT SUMMARY V DS (V) R DS(on) ( ) I D (A) a Q g (Typ.) N-Channel 3.47 at V GS = V 6..65 at V GS = 4.5 V 5.2 2.75 P-Channel - 3.89 at V GS = - V - 4.3.4 at V GS = -

More information

Dual P-Channel 20-V (D-S) MOSFET

Dual P-Channel 20-V (D-S) MOSFET New Product Dual P-Channel 2-V (D-S) MOSFET Si93CDY PRODUCT SUMMARY V DS (V) R DS(on) (Ω) I D (A) a, e Q g (Typ.) - 2.92 at V GS = - V - 8.33 at V GS = -.5 V - 8 2 SO-8 S 8 D G 2 7 D FEATURES Halogen-free

More information

N-Channel 75-V (D-S) 175 C MOSFET

N-Channel 75-V (D-S) 175 C MOSFET New Product SUP/SUB85N8-8 N-Channel 75-V (D-S) 75 C MOSFET V (BR)DSS (V) r DS(on) ( ) (A) 75.8 @ V GS = V 85 a TO-22AB D TO-263 G DRAIN connected to TAB G D S Top View SUP85N8-8 G D S Top View SUB85N8-8

More information

Automotive N-Channel 100 V (D-S) 175 C MOSFET

Automotive N-Channel 100 V (D-S) 175 C MOSFET Automotive N-Channel V (D-S) 75 C MOSFET PRODUCT SUMMARY V DS (V) R DS(on) ( ) at V GS = V.38 I D (A) 2 Configuration TO-263 Single D FEATURES TrenchFET Power MOSFET Package with Low Thermal Resistance

More information

Dual N-Channel 20-V (D-S) MOSFET

Dual N-Channel 20-V (D-S) MOSFET Si99CDY Dual N-Channel -V (D-S) MOSFET PRODUCT SUMMARY V DS (V) R DS(on) (Ω) I D (A) a Q g (Typ.). at V GS =.5 V. at V GS =.5 V nc SO- FEATURES Halogen-free According to IEC 9-- Definition TrenchFET Power

More information

MDS9652E Complementary N-P Channel Trench MOSFET

MDS9652E Complementary N-P Channel Trench MOSFET MDS9E Complementary N-P Channel Trench MOSFET MDS9E Complementary N-P Channel Trench MOSFET General Description The MDS9E uses advanced MagnaChip s MOSFET Technology to provide low on-state resistance,

More information

Dual P-Channel 40 V (D-S) MOSFET

Dual P-Channel 40 V (D-S) MOSFET Dual P-Channel V (D-S) MOSFET PRODUCT SUMMARY V DS (V) R DS(on) ( ) I D (A) d Q g (Typ.) -.27 at V GS = - V - 8.3 at V GS = -.5 V - 7.2 2.7 nc SO-8 S 8 D G 2 7 D S 2 3 D 2 G 2 5 D 2 FEATURES Halogen-free

More information

Characteristics Symbol Rating Unit

Characteristics Symbol Rating Unit General Description MDS1525 Single N-channel Trench MOSFET 3V, 16.9A, 1.1mΩ The MDS1525 uses advanced MagnaChip s MOSFET Technology, which provides high performance in on-state resistance, fast switching

More information

P-Channel 55-V (D-S), 175 C MOSFET

P-Channel 55-V (D-S), 175 C MOSFET New Product SUP/SUB75P5-8 P-Channel 55-V (D-S), 75 C MOSFET V (BR)DSS (V) r DS(on) ( ) I D (A) 55.8 75 a TO-22AB S TO-263 G DRAIN connected to TAB G D S Top View SUP75P5-8 G D S Top View SUB75P5-8 D P-Channel

More information

N-Channel 100-V (D-S) 175 C MOSFET

N-Channel 100-V (D-S) 175 C MOSFET N-Channel -V (D-S) 75 C MOSFET SUDN-5L PRODUCT SUMMARY V DS (V) r DS(on) ( ) (A) Q g (Typ). @ V GS = V.5.5 @ V GS =.5 V. 7.7 TO-5 D Drain Connected to Tab G G D S Order Number: Top View SUDN-5L SUDN-5L

More information

Automotive P-Channel 40 V (D-S) 175 C MOSFET

Automotive P-Channel 40 V (D-S) 175 C MOSFET Automotive P-Channel 4 V (D-S) 175 C MOSFET SQD5P4-9L PRODUCT SUMMARY V DS (V) - 4 R DS(on) ( ) at V GS = - 1 V.94 R DS(on) ( ) at V GS = - 4.5 V.19 I D (A) - 5 Configuration TO-252 Single S FEATURES Halogen-free

More information

Automotive N-Channel 300 V (D-S) 175 C MOSFET

Automotive N-Channel 300 V (D-S) 175 C MOSFET Automotive N-Channel 300 V (D-S) 75 C MOSFET PRODUCT SUMMARY V DS (V) 300 R DS(on) (Ω) at V GS = 0 V 0.097 I D (A) 35 Configuration Single Package TO-263 D TO-263 FEATURES TrenchFET power MOSFET Package

More information

FEATURES. Parameter Symbol Limit Unit Gate-Source Voltage V GS ± 20 V. 85 a Pulsed Drain Current I DM 600

FEATURES. Parameter Symbol Limit Unit Gate-Source Voltage V GS ± 20 V. 85 a Pulsed Drain Current I DM 600 DTU5N6 N-Channel 6 V (D-S) MOSFET PRODUCT SUMMARY V DS (V) R DS(on) ( ) I D (A) a.25 at V GS = V 5 6.5 at V GS = 4.5 V 75 FEATURES TrenchFET II Power MOSFET TO-252 D G D S Top View S N-Channel MOSFET ABSOLUTE

More information

Automotive N-Channel 60 V (D-S) 175 C MOSFET

Automotive N-Channel 60 V (D-S) 175 C MOSFET Automotive N-Channel 6 V (D-S) 75 C MOSFET TO-263 7-Lead D S FEATURES TrenchFET power MOSFET Package with low thermal resistance % R g and UIS tested AEC-Q qualified Material categorization: for definitions

More information

Features SOT363. Top View. Part Number Case Packaging DMN2004DWK-7 SOT363 3,000/Tape & Reel

Features SOT363. Top View. Part Number Case Packaging DMN2004DWK-7 SOT363 3,000/Tape & Reel NAB YM DUAL N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary R DS(ON) max I D T A = +25 C 2V.55Ω @ V GS = 4.5V 54mA BV DSS Description and Applications This MOSFET is designed to minimize the on-state

More information

DMN3032LFDB. Features and Benefits. Product Summary. Description and Applications. Mechanical Data. Ordering Information (Note 4) Marking Information

DMN3032LFDB. Features and Benefits. Product Summary. Description and Applications. Mechanical Data. Ordering Information (Note 4) Marking Information YM DUAL N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary BV DSS 3V R DS(ON) Max I D Max T A = +5 C 3mΩ @ V GS = V 6.A 4mΩ @ V GS = 4.5V 5.A Description and Applications This MOSFET is designed to minimize

More information

40V N-Channel Trench MOSFET

40V N-Channel Trench MOSFET FEATURES Trench Power MOSFET Technology Low R DS(ON) Low Gate Charge Optimized For Fast-switching Applications 4V N-Channel Trench MOSFET APPLICATIONS Synchronous Rectification in DC/DC and AC/DC Converters

More information

P-Channel 60-V (D-S) MOSFET

P-Channel 60-V (D-S) MOSFET New Product P-Channel 60-V (D-S) MOSFET Si309CDS PRODUCT SUMMARY V DS (V) R DS(on) (Ω) I D (A) d Q g (Typ.) - 60 0.345 at V GS = - 0 V -.6 0.450 at V GS = - 4.5 V -.4 TO-36 (SOT-3).7 nc FEATURES Halogen-free

More information

Characteristics Symbol Rating Unit Drain-Source Voltage V DSS 40 V Gate-Source Voltage V GSS ±20 V T C=25 o C (Silicon Limited)

Characteristics Symbol Rating Unit Drain-Source Voltage V DSS 40 V Gate-Source Voltage V GSS ±20 V T C=25 o C (Silicon Limited) General Description The MDU4N uses advanced MagnaChip s MOSFET Technology, which provides high performance in on-state resistance, fast switching performance and excellent quality. MDU4N is suitable device

More information

Dual N-Channel 30-V (D-S) MOSFET with Schottky Diode

Dual N-Channel 30-V (D-S) MOSFET with Schottky Diode Si468DY Dual N-Channel 3-V (D-S) MOSFET with Schottky Diode PRODUCT SUMMARY V DS (V) R DS(on) (Ω) I D (A) a Q g (Typ.) Channel- 3 Channel-2 3.7 at V GS = V 8..95 at V GS = 4.5 V 7.5. at V GS = V 5.2.5

More information

N-Channel 60-V (D-S), 175 C MOSFET

N-Channel 60-V (D-S), 175 C MOSFET N-Channel -V (D-S), 75 C MOSFET Si4559EY V DS (V) r DS(on) ( ) (A) N-Channel P-Channel.55 @ V GS = V 4.5.75 @ V GS = 4.5 V 3.9. @ V GS = V 3..5 @ V GS = 4.5 V.8 D D S SO-8 S 8 D G 7 D S 3 D G 4 5 D G G

More information