40V N-Channel Trench MOSFET

Transcription

1 FEATURES Trench Power MOSFET Technology Low R DS(ON) Low Gate Charge Optimized For Fast-switching Applications 4V N-Channel Trench MOSFET APPLICATIONS Synchronous Rectification in DC/DC and AC/DC Converters Isolated DC/DC Converters in Telecom and Industrial Device Marking and Package Information Device Package Marking SOT-23 4N4AT Absolute Maximum Ratings T C = 25ºC, unless otherwise noted Parameter Symbol Value SOT-23 Unit Drain-Source Voltage (V GS = V) V DSS 4 V Continuous Drain Current I D 4 A Pulsed Drain Current (note1) I DM 16 A Gate-Source Voltage V GSS ±2 V Single Pulse Avalanche Energy (note2) E AS 3.3 mj Avalanche Current I AS 4.7 A Power Dissipation (T C = 25ºC ) P D 1.4 W Operating Junction and Storage Temperature Range T J, T stg -55~+15 ºC Thermal Resistance Parameter Symbol Value SOT-23 Unit Thermal Resistance, Junction-to-Ambient R thja 89 ºC/W V1. 1

2 Specifications T J = 25ºC, unless otherwise noted Parameter Symbol Test Conditions Static Value Min. Typ. Max. Unit Drain-Source Breakdown Voltage V (BR)DSS V GS = V, I D = 25µA V Zero Gate Voltage Drain Current I DSS V DS = 4V, V GS = V, T J = 25ºC V DS = 4V, V GS = V, T J = 15ºC μa Gate-Source Leakage I GSS V GS = ±2V ±1 na Gate-Source Threshold Voltage V GS(th) V DS = V GS, I D = 25µA V Drain-Source On-Resistance (Note3) R DS(on) V GS = 1V, I D = 2A mω V GS = 4.5V, I D = 2A mω Forward Transconductance (Note3) g fs V DS = 5V, I D =1A S Dynamic Input Capacitance C iss V GS = V, Output Capacitance C oss V DS = 2V, f = 1.MHz Reverse Transfer Capacitance C rss Total Gate Charge Q g Gate-Source Charge Q gs V DD = 2V, I D = 4A, V GS = 1V Gate-Drain Charge Q gd pf nc Turn-on Delay Time t d(on) Turn-on Rise Time t r V DD = 2V, I D = 4A, Turn-off Delay Time t d(off) R G = 2.5Ω ns Turn-off Fall Time t f Drain-Source Body Diode Characteristics Continuous Body Diode Current I S T C = 25ºC Pulsed Diode Forward Current I SM A Body Diode Voltage V SD T J = 25ºC, I SD = 2A, V GS = V V Notes 1. Repetitive Rating: Pulse Width limited by maximum junction temperature 2. V DD = 4V, R G = 25Ω, Starting T J = 25 C 3. Pulse Test: Pulse Width 3μs, Duty Cycle 1% V1. 2

3 V GS, Gate-to-Source Voltage (V) R DS(on), On-Resistance (mω) I D, Drain Current (A) I s, Source Current (A) Capacitance (pf) I D, Drain Current (A) Typical Characteristics T J = 25ºC, unless otherwise noted V 7V 4.5V 4V Figure 1. Output Characteristics 15 1 Figure 2. Transfer Characteristics V 1 5 3V 5 T J = 25ºC T J = 125ºC V DS, Drain-to-Source Voltage (V) V GS, Gate-to-Source Voltage (V) 5 Figure 3. On-Resistance vs. Drain Current 1 Figure 4. Capacitance 45 T J = 25ºC V GS = 4.5V V GS = 1V 6 C iss V GS = f = 1MHz Crss C oss I D, Drain Current (A) V DS, Drain-to-Source Voltage (V) 12 Figure 5. Gate Charge 1 2 Figure 6. Body Diode Forward Voltage T J = 125ºC T J = 25ºC 4 2 V DD = 2V Q g, Total Gate Charge (nc) V SD, Source-to-Drain Voltage (V) V1. 3

4 I D, Drain Current(A) V BR(DSS), (Normalized) Z thjc, Thermal Impedance (Normalized) R DS(on), (Normalized) V GS(th), (Variance) Typical Characteristics T J = 25ºC, unless otherwise noted Figure 7. On-Resistance vs. Junction Temperature V GS = 1V I D = 2A Figure 8. Threshold Voltage vs. Junction Temperature I D = 25µA T J, Junction Temperature (ºC) T J, Junction Temperature (ºC) 1.3 Figure 9. Breakdown voltage vs. Junction Temperature Figure 1. Transient Thermal Impedance 1.2 I D = 25µA T J, Junction Temperature (ºC) Figure 11. Safe operation area for T p, Pulse Width (s) D =.5 D =.2 D =.1 D =.5 D =.2 D =.1 Single Pulse t p = 1us t p = 1us t p = 1ms t p = 1s t p = 1s DC V DS, Drain-Source Voltage(V) V1. 4

5 Figure A:Gate Charge Test Circuit and Waveform Figure B:Resistive Switching Test Circuit and Waveform Figure C:Unclamped Inductive Switching Test Circuit and Waveform V1. 5

6 SOT-23 6 V1.

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